CN206040616U - 功率电子模块 - Google Patents
功率电子模块 Download PDFInfo
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- CN206040616U CN206040616U CN201620713797.4U CN201620713797U CN206040616U CN 206040616 U CN206040616 U CN 206040616U CN 201620713797 U CN201620713797 U CN 201620713797U CN 206040616 U CN206040616 U CN 206040616U
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- 239000004020 conductor Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000010292 electrical insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
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Abstract
功率电子模块设计成具有基板,该基板具有电路载体,该电路载体布置在所述基板上并具有与基板电绝缘的多个导体轨道,其中功率半导体组件布置在这些导体轨道中的一个上,并且该功率电子模块具有负载连接元件。在这种情况下,基板具有连续的第一凹部,以及电路载体具有连续的第二凹部,其中第一凹部和第二凹部布置成彼此对准。负载连接元件具有:第一接触装置,其与导体轨道的相反于所述基板的一侧的接触区域处于导电接触;第二接触装置,其适于从外部与电路载体进行接触;和连接部,其在第一接触装置和第二接触装置之间延伸通过第一凹部和第二凹部。
Description
技术领域
本实用新型描述了一种功率电子模块,其具有基板、壳体,以及还有负载连接元件,所述负载连接元件也可优选设计成插头触头。
背景技术
从现有技术已知与印刷电路板和功率半导体模块处于螺钉压力接触连接的装置,其例如在DE 10 2004 025 609 A1中公开。印刷电路板具有绝缘基材,具有布置于其上的导体轨道。功率半导体模块具有绝缘塑料壳体、布置在所述塑料壳体内并具有导体轨道的基板,和布置在所述基材上并以适于电路的方式连接的功率半导体组件。此外,功率半导体模块具有电源连接和辅助连接,诸如栅极连接、辅助发射器连接或传感器连接。在这种情况下,电源连接为螺钉连接的形式,并且所述辅助连接设计成与接触弹簧建立压力接触连接。电源连接的螺钉接触连接布置的螺钉延伸通过在所述印刷电路板中的凹部并形成适于辅助连接的压力供应线。如在此所示以及此外在现有技术中为常规的那样,所述负载连接横向地或在顶面处延伸通过所述功率半导体模块的壳体,所述壳体通常是现有技术中的塑料壳体。
实用新型内容
鉴于所述现有技术,本实用新型的目的是提出一种紧凑的功率电子模块,其中负载连接元件可为插头触头的形式,此外,可在功率半导体模块的内部创建适于其它组件的额外空间。
在第一方案中,根据本实用新型的功率电子模块设计成具有基板,其具有电路载体,电路载体布置在所述基板上并具有与基板电绝缘的多个导体轨道,其中功率半导体组件布置在这些导体轨道中的一个上,并且所述功率电子模块具有负载连接元件。在这种情况下,基板具有连续的第一凹部,以及电路载体具有连续的第二凹部,其中第一凹部和第二凹部布置成彼此对准。负载连接元件具有:第一接触装置,其与导体轨道的相反于所述基板的一侧的接触区域处于导电接触;第二接触装置,其适于从外部与电路载体进行接触;和连接部,其在第一接触装置和第二接触装置之间延伸通过第一凹部和第二凹部。
在第二方案中,根据本实用新型的功率电子模块设计成具有基板,其具有电路载体,电路载体布置在所述基板上并具有与基板电绝缘的多个导体轨道,其中功率半导体组件布置在这些导体轨道中的一个上,所述功率电子模块具有内部连接装置以及所述功率电子模块具有负载连接元件,所述内部连接装置为膜复合体的形式,所述膜复合体包括电绝缘膜和形成导体轨道的固有结构(inherently structured)的导电膜。在这种情况下,基板具有连续的第一凹部,以及连接装置具有连续的第三凹部,其中第一凹部和第三凹部布置成彼此对准。负载连接元件具有:第一接触装置,其与导体轨道的相反于所述基板的一侧的接触区域处于导电接触;第二接触装置,其适于从外部与电路载体进行接触;和连接部,其在第一接触装置和第二接触装置之间延伸通过第一凹部和第三凹部。
当存在多个负载连接元件时,所述多个负载连接元件在所述替代方案中在原则上也可能存在于一个功率电子模块内。
在此和在下面的文本中,连续的凹部意旨被理解成意味着其从一侧延伸通过物体到达相反侧的凹部。
不言而喻的是,以单数引用的特征,特别是功率半导体模块和负载连接元件,根据本实用新型可以复数个存在于相应模块中,如果该特征本身不被排除的话。
由于根据两种替代方案中的一种的功率电子模块的改进,对于第二接触装置可能的是以简单的方式为插头连接的形式。此外,然后可能的是以非常简单的方式将另外的组件(特别是电容器装置)布置在电路载体上方的安装空间内。
优选的是基板为冷却装置的形式,优选为具有多个冷却指状物或散热片的空气冷却装置的形式。作为替代方案,基板也可为液体冷却装置的形式,特别是在高功率或电路载体高度集成的情况下。在基板的最简单的改进中,所述基板设计成布置在外部冷却装置上。
电路载体优选为具有陶瓷绝缘装置的基材形式,特别是AMB基材或DCB基材的形式或为引线框架的形式,所述引线框架具有用于相对于基板电绝缘的绝缘膜。作为对此的替代方案,基板与电路载体一起可为IMS基材的形式。在这种情况下,基板和电路载体形成一体式单元。
功率电子模块优选具有布置在基板上的单部分或多部分的优选杯形的壳体。
特别优选的是,用于相对于基板将负载连接元件(特别是所述负载连接元件的连接部)电绝缘的绝缘装置布置在所述第一凹部的区域内。
连接部,以及因此负载连接元件本身,优选通过紧固装置固定到基板上。在这种情况下,紧固装置可以力配合的方式将第一接触部连接到导体轨道的相关联的接触区域。紧固装置优选为螺钉的形式,其作用于负载连接元件的连接部的螺纹上。由于这种改进,电路载体可被推压到基板上,其结果是从电路载体到基板的热量传递被显著改善。
此外,在一种有利的改进中,电流传感器可围绕负载连接元件的连接部布置,优选以便部分地围绕所述连接部。在此,“部分地围绕”意旨被理解成特别是意味着连接部不在其整个长度上由电流传感器围绕。
在这种情况下,有利的是电流传感器布置在电路载体的或连接装置的相反于基板的一侧上。为此目的,第一接触装置可为杯形设计,其结果是所述第一接触装置因此围绕电流传感器。作为对此的替代方案,第一接触装置可为轭状、U形或弓形设计,其结果是,所述第一接触装置仅部分地围绕所述电流传感器。
还有利的是,电流传感器部分或完全地布置在基板中的第一凹部的优选非连续的延伸部分内。
不言而喻的是,本实用新型的各种改进可单独地或以任何所需的组合来实现,以便实现进步。具体地,在不脱离本实用新型范围的情况下,上面所提及和所解释的特征不仅可以按指定的组合使用,而且可以按其它组合或单独地使用。
附图说明
本实用新型的进一步的解释、有利的细节和特征可在根据本实用新型的模块或其部分的在图1至图8中示出的示例性实施例的以下描述中找到。
图1是根据本实用新型的功率电子模块的第一替代方案的改进的分解示意图。
图2示出根据本实用新型的功率电子模块的第一替代方案的进一步改进。
图3示出根据本实用新型的功率电子模块的第二替代方案的改进。
图4和图5示出功率电子模块的第一替代方案的改进,在每种情况下具有电流传感器。
图6和图7示出根据本实用新型的功率电子模块的电路载体的不同改进。
图8是根据本实用新型的功率电子模块的第一替代方案的立体示意图。
具体实施方式
图1是根据本实用新型的功率电子模块1的第一替代方案的改进的分解示意图。所述附图示出基板4,在此其为具有多个散热片的空气冷却装置400的形式。此外,基板4具有连续的第一凹部48。该第一凹部48从电路载体5布置于其上的主区域延伸通过基板4。以本领域内的常规方式,导热膏42被附加地设置在电路载体5布置于其上的主区域上。
所述附图还示出电路载体5,在此为DCB基材500的形式,其在本领域内是常规的,并且具有平坦的陶瓷绝缘体54和布置在所述绝缘体的表面上的金属叠片56。相反于基板4的金属叠片是固有结构的并形成电路载体5的导体轨道52。
功率半导体组件6布置在电路载体5的导体轨道52上,同样是以本领域内的常规方式布置,并且通过内部连接装置8以适于电路的方式导电地连接到彼此。在此,连接装置8为膜复合体800的形式,其在本领域内是常规的并包括两个导电膜82、86,和布置在所述导电膜之间的电绝缘膜84。导电膜是固有结构的并形成连接装置8的专用导体轨道。如果有必要的话,出于电路相关的原因,镀通孔可设置在导电膜82、86之间。
此外,电路载体5具有第二连续的凹部58,其从顶部金属叠片的表面延伸通过绝缘体54到达第二金属叠片56的表面。该第二凹部58与基板4中的第一凹部48对准。但是,在这种情况下,对于两个凹部48、58而言不必具有相同的直径。重要的是负载连接元件7可延伸通过两个所述凹部。用于电连接到负载连接元件7的接触区域530横向相邻于第二凹部58布置。
在此,该负载连接元件7、700是旋转对称的,且具有T形横截面,并具有第一接触装置72和第二接触装置76,以及还具有连接所述接触装置的连接部74。借助于第一接触装置72的接触区域730与导体轨道52的相关联的接触区域530处于导电接触,第一接触装置72与电路载体5的导体轨道52处于导电接触。连接部74延伸通过第一凹部48和第二凹部58,因此延伸通过电路载体5和基板4,并且终止于第二接触部76内,第二接触部76位于基板4的相反于电路载体5的一侧上且为插头接触的形式。
为了固定负载连接元件7的目的,进一步示出螺母742,所述螺母的确切功能在关于图4的描述中进行解释。
此外,所述图1通过横截面示出单部分的杯形壳体3,该壳体通过搁置在基板4上,其结果是电路载体5被布置在功率电子模块1的内部中。此外,壳体3具有适于辅助连接元件的凹部30,辅助连接元件为弹簧接触件32的形式并且发送例如传感器信号。
图2示出根据本实用新型的功率电子模块1的第一替代方案的进一步改进,其基本上类似于根据图1所示的功率电子模块。主要区别在电路载体5的设计和内部连接装置8的不同设计,该内部连接装置基本上独立于所述电路载体的设计。
在此,电路载体5为引线框架502的形式,也就是说为薄的、平坦的和固有结构成形的金属体的形式,由于该结构而形成单独的导体轨道52。为了提供电绝缘、特别是相对于基板电绝缘的目的,基本上非结构化的绝缘膜54布置在基板4和导体轨道52之间。这些导体轨道52中的一个,以及因此还有绝缘膜54,具有第二凹部58,该第二凹部是电路载体5的。该第二凹部58同样与基板4的第一凹部48对准。
在此,内部连接装置8为导线结合连接802(wire bonding connection)的形式,如本领域中内常规的那样。
图3示出根据本实用新型的功率电子模块2的第二替代方案的改进。在这种情况下,基板4、壳体3和负载连接元件7同样如相对于图1所述的那样进行设计。电路载体5具有绝缘陶瓷54和布置在所述绝缘陶瓷上的导体轨道52。功率半导体组件6布置在这些导体轨道52上,并且以适于电路的方式,从根本上以相对于图1相同的方式通过膜复合体800而导电连接。
然而,在此,该膜复合体800另外还用于连接到负载连接元件7。为此目的,膜复合体800沿横向突出超过电路载体5。在膜复合体800突出超过电路载体5的该区域中,电绝缘膜84用于将第一、顶部的导电膜82相对于基板4绝缘。连续的第三凹部88现在延伸通过这两个膜82、84,与基板4的所述第一凹部48对准以便负载连接元件7的布置。
在这种情况下,第一接触装置72的接触区域730与连接装置8的由导电膜82形成的导体轨道的相关联的接触区域830处于导电接触。
图4和图5示出功率电子模块1的第一替代方案的改进,在每种情况下具有电流传感器9。为空气冷却装置400形式的基板4同样在图4中示出。所述基板具有上面已经描述的连续的第一凹部48。电路载体5具有类似于相对于图3所示的设计,而内部连接装置8具有类似于根据图2所示的设计。
所述附图还示出绝缘装置46,其延伸通过所述第一凹部48和第二凹部58并用于将负载连接元件7的连接部74相对于基板4电绝缘。所述附图示出绝缘装置46的一定的重叠,该重叠用于确保必要的绝缘距离,所谓的空气和爬电路径。
在此,负载连接元件7的第一接触装置72是旋转对称的并具有杯形设计。因此,第一接触装置72具有到电路载体5的导体轨道52的相关联接触区域530的接触区域730,其为圆柱形壳体的形式。负载连接元件7的连接部74从该第一接触装置72的中心突出,并延伸通过电流传感器9。该电流传感器9因此在为杯形的第一接触装置72中布置在电路载体5的上方。电流传感器9的必要的连接通过电路载体5形成,或通过以绝缘的方式穿过杯形的第一接触装置72来形成。
如所描述的那样,电流传感器9部分地围绕所述连接部74。在其进一步的轮廓中,连接部74延伸通过第一凹部48和第二凹部58。之后,连接部74具有螺纹744,该螺纹近似地延伸远至负载连接元件7的第二接触装置76。
为了第一接触装置72的相应接触区域530、730和电路载体5的导体轨道52可靠电压力接触连接的目的,连接部74被固定到基板4。为此目的,螺母742作用在连接部74的螺纹744上。优选为了确保力的永久作用,弹簧746,在此为板簧,布置成在螺母742和绝缘装置46以及因此基板4之间的压力存储。此外,如果需要的话,或者如果是有利的,电路载体5以这种方式压靠基板4,其结果是建立优异的热接触,对于废热而言可能借助于所述热接触而从电路载体5排放到基板4。
图5示出模块1,其设计基本上类似于根据图4的设计。以功能上并不一定配合的不同方式,电路载体5、电流传感器9的位置以及因此负载连接元件7的第一接触装置72的形状以及还有基板4的设计不同于根据图4所示的那些。在此,电路载体5的设计类似于根据图2的设计,而基板4为液体冷却装置402的形式。三个冷却液体通道通过示例的方式示出。
电流传感器9布置在另一凹部480中,所述另一凹部480在基板4的第一凹部48处延伸,但它本身是不连续的。在这种情况下,电流传感器9可如图所示完全布置在该另一凹部480内,或如没有示出的那样,可从基板4在电路载体5的方向上突出。
在所示的改进中,第一接触装置72可比根据图4所示的更简单。重要的是第一接触装置72搁置在电路载体5的导体轨道52上,使其进行可靠的电接触。然而它不一定必须只搁置在导体轨道52上。
图6和图7示出根据本实用新型的功率电子模块1的电路载体5的不同改进。所述附图的每一个示出基板4的平面视图,其中电路载体5布置在所述基板上。
在图6中,电路载体5具有类似于图4的设计,并具有陶瓷绝缘体54,其具有布置在所述绝缘体上的三个导体轨道52。在此,这些导体轨道52的每一个具有相邻于所述第一凹部48和第二凹部58布置的两个接触区域530。
在图7中,电路载体5从根本上根据图5进行设计,但在此具有单独的绝缘膜54,引线框架502的导体轨道52位于其上。在每种情况下,对于每个凹部而言,具有位于其上的导体轨道52的一个绝缘膜54同样布置到第一凹部48和第二凹部58的左侧并相邻于第一凹部48和第二凹部58,第一凹部48和第二凹部58彼此对准。然而,这些导体轨道52不与功率半导体组件6或电路载体的另外的导体轨道处于导电接触。在本实用新型的范围内,这种类型的改进也应该通过术语“第二凹部,其连续地通过电路载体”来理解。
图8是根据本实用新型的功率电子模块1的第一替代方案的立体示意图,但是为了清楚起见没有壳体。所述附图示出基板4,其为空气冷却装置400的形式。为DCB基材500形式的电路载体5布置在该基板4上,功率半导体组件6以适于电路的方式位于所述电路载体的导体轨道52上并连接到所述导体轨道52。
所述附图还示出电容器装置34,其用于将直流电压供应到在电路载体5上形成的功率电子电路,并且还示出用于控制功率半导体组件6的驱动装置36。
三个负载连接元件7设置成用于与功率电子电路从外部进行接触,所述负载连接元件的每一个在基板4(在此为空气冷却装置400)中通过电路载体5中的第二凹部58以及还通过第一凹部48延伸到外部,所述第一凹部48与所述第二凹部对准。
为了允许相应导体轨道52进行接触的目的,负载连接元件7具有弓形的第一接触装置72。在每种情况下,这些第一接触装置72中的两个围绕一个相关联的电流传感器9接合。相应负载连接元件7的连接部74(该连接部从第一接触装置72开始)延伸通过该电流传感器9。此外,负载连接元件7如相对于图4所述的那样设计。
Claims (20)
1.功率电子模块(1),其具有基板(4),所述基板具有电路载体(5),所述电路载体布置在所述基板上并具有与基板(4)电绝缘的多个导体轨道,其中功率半导体组件(6)布置在多个导体轨道中的一个上,并且所述功率电子模块具有负载连接元件(7),其中所述基板(4)具有连续的第一凹部(48),以及电路载体(5)具有连续的第二凹部(58),其中第一凹部(48)和第二凹部(58)布置成彼此对准,其中负载连接元件(7)具有:第一接触装置(72),其与导体轨道的相反于所述基板(4)的一侧的接触区域处于导电接触;第二接触装置(76),其适于从外部与电路载体(5)进行接触;和连接部(74),其在第一接触装置(72)和第二接触装置(76)之间延伸通过第一凹部(48)和第二凹部(58)。
2.功率电子模块(2),其具有基板(4),所述基板具有电路载体(5),所述电路载体布置在所述基板上并具有与基板(4)电绝缘的多个导体轨道,其中功率半导体组件(6)布置在多个导体轨道中的一个上,所述功率电子模块具有内部连接装置(8)以及具有所述功率电子模块负载连接元件(7),所述内部连接装置为膜复合体的形式,所述膜复合体包括电绝缘膜(84)和形成导体轨道的固有结构的导电膜(82,86),其中所述基板(4)具有连续的第一凹部(48),以及内部连接装置(8)具有连续的第三凹部(88),其中第一凹部(48)和第三凹部(88)布置成彼此对准,其中负载连接元件(7)具有:第一接触装置(72),其与内部连接装置(8)的导体轨道的相反于所述基板(4)的一侧的接触区域处于导电接触;第二接触装置(76),其适于从外部与电路载体(5)进行接触;和连接部(74),其在第一接触装置(72)和第二接触装置(76)之间延伸通过第一凹部(48)和第三凹部(88)。
3.根据权利要求2所述的功率电子模块,其中所述基板(4)为冷却装置。
4.根据权利要求3所述的功率电子模块,其中所述冷却装置为具有多个冷却指状物或散热片的空气冷却装置。
5.根据权利要求2所述的功率电子模块,其中所述电路载体(5)为具有陶瓷绝缘装置的基材。
6.根据权利要求5所述的功率电子模块,其中所述具有陶瓷绝缘装置的基材为AMB基材或DCB基材。
7.根据权利要求2所述的功率电子模块,其中所述电路载体(5)为引线框架的形式,所述引线框架具有用于相对于基板(4)电绝缘的绝缘膜(54)。
8.根据权利要求2所述的功率电子模块,其中基板(4)和电路载体(5)均为IMS基材。
9.根据权利要求2所述的功率电子模块,其中所述模块具有布置在基板(4)上的单部分或多部分的壳体(3)。
10.根据权利要求9所述的功率电子模块,其中所述壳体(3)为杯形。
11.根据权利要求2所述的功率电子模块,其中用于相对于基板(4)将所述负载连接元件(7)的连接部(74)电绝缘的绝缘装置(46)布置在所述第一凹部(48)的区域内。
12.根据权利要求2所述的功率电子模块,其中所述连接部(74)通过紧固装置(742,744)固定到基板(4)上,从而使得负载连接元件(7)通过紧固装置(742,744)固定到基板(4)上。
13.根据权利要求12所述的功率电子模块,其中所述紧固装置(742,744)以力配合的方式将第一接触装置(72)的接触区域连接到导体轨道的相关联的接触区域。
14.根据权利要求13所述的功率电子模块,其中所述紧固装置(742,744)为螺钉连接的形式,其中螺母(742)作用于负载连接元件(7)的连接部(74)的螺纹(744)上。
15.根据权利要求2所述的功率电子模块,其中电流传感器(9)围绕负载连接元件(7)的连接部(74)布置。
16.根据权利要求15所述的功率电子模块,其中所述电流传感器(9)布置在电路载体(5)的相反于基板(4)的一侧上或连接装置(8)的相反于基板(4)的一侧上。
17.根据权利要求16所述的功率电子模块,其中所述第一接触装置(72)为杯形设计并围绕所述电流传感器(9)。
18.根据权利要求16所述的功率电子模块,其中所述第一接触装置(72)为轭状、U形或弓形设计并部分地围绕所述电流传感器(9)。
19.根据权利要求16所述的功率电子模块,其中所述电流传感器(9)布置在基板(4)中的第一凹部(48)的延伸部分(480)内。
20.根据权利要求19所述的功率电子模块,其中所述延伸部分(480)为非连续的延伸部分。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106340493A (zh) * | 2015-07-10 | 2017-01-18 | 赛米控电子股份有限公司 | 功率电子模块 |
CN110351960A (zh) * | 2018-04-03 | 2019-10-18 | 赛米控电子股份有限公司 | 开关装置和制造开关装置的方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015114188B4 (de) * | 2015-08-26 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse |
DE102017100328B4 (de) * | 2017-01-10 | 2020-03-19 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit einem Leistungshalbleiterbauelement |
DE102017110722B4 (de) * | 2017-05-17 | 2021-03-18 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Anordnung und elektrisches Fahrzeug hiermit |
EP3649838B1 (de) * | 2017-07-04 | 2024-01-10 | Weidmüller Interface GmbH & Co. KG | Steuerung und modulares steuerungssystem eines industriellen automatisierungssystems |
DE102017115883B4 (de) * | 2017-07-14 | 2020-04-02 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit Gleich- und Wechselspannungsanschlusselementen und Anordnung hiermit |
DE102017212434A1 (de) * | 2017-07-20 | 2019-01-24 | Audi Ag | Elektronikeinrichtung mit wenigstens einer zu kühlenden Komponente |
DE102017214267A1 (de) * | 2017-08-16 | 2019-02-21 | Mahle International Gmbh | Kühlvorrichtung und Verfahren zum Herstellen der Kühlvorrichtung |
CN111406316B (zh) * | 2017-10-26 | 2023-08-01 | 新电元工业株式会社 | 电子部件 |
DE102017129707A1 (de) * | 2017-12-13 | 2019-06-13 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Herstellung eines leistungselektronischen Systems |
DE102018109803A1 (de) * | 2018-04-24 | 2019-10-24 | Schaeffler Technologies AG & Co. KG | Leistungselektronikeinheit mit integriertem Stromsensor zur Ausbildung eines Moduls; sowie Antriebsstrang |
EP3629687A1 (de) * | 2018-09-26 | 2020-04-01 | Siemens Aktiengesellschaft | Verfahren für eine montage eines elektrischen geräts |
DE102019115498B4 (de) * | 2019-06-07 | 2022-06-02 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul mit Gleich- und Wechselpotentialanschlussflächen und Anordnung hiermit |
DE102020124822A1 (de) | 2020-05-25 | 2021-11-25 | Infineon Technologies Ag | Elektrisches Wechselrichter-System |
DE102022108277A1 (de) | 2022-04-06 | 2023-10-12 | Semikron Elektronik Gmbh & Co. Kg | Gehäuse, insbesondere für eine leistungselektronische Baugruppe, und Anordnung hiermit |
TWI815450B (zh) * | 2022-05-13 | 2023-09-11 | 賴鴻尉 | 具有電源完整性的探針頭及其製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19807718C2 (de) * | 1998-02-24 | 2000-12-07 | Lear Automotive Electronics Gm | Elektronikbaugruppe |
DE19900603A1 (de) * | 1999-01-11 | 2000-07-13 | Bosch Gmbh Robert | Elektronisches Halbleitermodul |
US7119437B2 (en) * | 2002-12-26 | 2006-10-10 | Yamaha Hatsudoki Kabushiki Kaisha | Electronic substrate, power module and motor driver |
JPWO2005088711A1 (ja) * | 2004-03-16 | 2008-01-31 | 松下電器産業株式会社 | ドライバモジュール構造 |
DE102004025609B4 (de) | 2004-05-25 | 2010-12-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung in Schraub- Druckkontaktierung mit einem Leistungshalbleitermodul |
DE102006006425B4 (de) * | 2006-02-13 | 2009-06-10 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul in Druckkontaktausführung |
DE102009024369B4 (de) * | 2009-06-09 | 2011-12-29 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches System |
DE102013104949B3 (de) * | 2013-05-14 | 2014-04-24 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronische Schalteinrichtung und Anordnung hiermit |
DE102014106570B4 (de) * | 2014-05-09 | 2016-03-31 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit |
DE102015111204B4 (de) * | 2015-07-10 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Modul mit Lastanschlusselementen |
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CN106340493B (zh) * | 2015-07-10 | 2020-02-25 | 赛米控电子股份有限公司 | 功率电子模块 |
CN110351960A (zh) * | 2018-04-03 | 2019-10-18 | 赛米控电子股份有限公司 | 开关装置和制造开关装置的方法 |
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