CN106486439A - 包括两部分式壳体的功率电子子模块 - Google Patents

包括两部分式壳体的功率电子子模块 Download PDF

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CN106486439A
CN106486439A CN201610702196.8A CN201610702196A CN106486439A CN 106486439 A CN106486439 A CN 106486439A CN 201610702196 A CN201610702196 A CN 201610702196A CN 106486439 A CN106486439 A CN 106486439A
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base material
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CN106486439B (zh
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I·博根
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Abstract

提出一种子模块，其被实施为包括基材、功率半导体组件、连接装置、端子装置及绝缘材料主体。在这种情况下，基材具有彼此电绝缘的导体轨道，其中功率半导体组件布置在导体轨道上并且导电地连接到导体轨道。连接装置被实施为膜复合体，从而形成面向功率半导体组件和基材的第一主表面及与第一主表面相反的第二主表面，其中子模块通过连接装置在内部以符合电路的方式连接。绝缘材料主体具有第一部分主体，其连接到基材的边缘，且还具有适于端子元件的第一切除部。

Description

包括两部分式壳体的功率电子子模块
技术领域
本发明描述了一种功率电子子模块，其包括可形成壳体的两部分式绝缘材料主体。该子模块凭借下述事实可形成功率半导体模块或功率电子系统的基本单元，所述事实即所述子模块通过自身或与另外的、优选相同的子模块结合来形成功率半导体模块或功率电子系统的基本功率电子构件块。
背景技术
在现有技术中，例如在DE 10 2013 104 949B3中，公开了一种开关装置，其包括基材、功率半导体组件、连接装置、负载端子装置和压力装置。在这种情况下，基材具有电绝缘的导体轨道，其中功率半导体组件布置在导体轨道上。连接装置被实施为膜复合体，其包括导电膜和电绝缘膜，并具有第一主表面和第二主表面。所述开关装置从而在内部以符合电路的方式连接。压力装置具有压力元件，所述压力元件具有第一切除部，布置有从所述第一切除部突出的压力元件，其中压力元件按压到膜复合体的第二主表面的部段上，并且在这种情况下，所述部段布置在功率半导体组件的沿着垂直于功率半导体组件的方向突出的区域内。
发明内容
基于有关所引用的现有技术的知识，本发明的目的是提出一种功率电子子模块，其中所述子模块能够以简单的方式使用，并作为基本单元允许获得功率半导体模块或功率电子系统的简单结构。
根据本发明的功率电子子模块被实施为包括基材，包括布置在基材上的功率半导体组件，包括连接装置，包括端子装置以及包括绝缘材料主体。在这种情况下，基材具有彼此电绝缘的导体轨道，其中所述功率半导体组件布置在导体轨道上并且导电地连接到所述导体轨道。连接装置被实施为膜复合体，其包括导电膜和电绝缘膜，从而形成面向功率半导体组件和基材的第一主表面以及与所述第一主表面相反的第二主表面，其中所述子模块通过连接装置在内部以符合电路的方式连接。绝缘材料主体具有第一部分主体，其连接到所述基材的边缘，并且还具有适于端子元件的第一切除部。绝缘材料主体类似地具有第二部分主体，其被实施为压力主体并且具有第二切除部，布置有从所述第二切除部突出的压力元件。第一部分主体连接到第二部分主体以使得所述第二部分主体布置成能够在基材的方向上相对于所述第一部分主体移动，以便通过压力元件按压到膜复合体的第二主表面的部段上，其中所述部段布置在功率半导体组件的沿着垂直于功率半导体组件的方向突出的区域内。
不言而喻的是，除非本身被排除在外，否则以单数提及的特征，特别是功率半导体模块和与其相应的压力元件，以及在本领域内作为常规的负载端子元件，可在根据本发明的子模块内以复数存在。
优选的是所述第一部分主体部分地或完全地连接到基材的边缘，优选以粘结的方式、优选通过粘合剂连接而连接到基材的边缘。
特别有利的是，第一部分主体和第二部分主体实施为一体。
进一步有利的是，第一部分主体和第二部分主体通过弹性中间主体、特别是通过弹性凸耳连接到彼此。
优选地，绝缘材料主体由耐高温的热塑性材料、特别是聚苯硫醚构成，以及压力元件由硅橡胶、特别是交联的液体硅胶构成。
还优选的是，优选扁平的金属主体布置在第二部分主体的背离基材的一侧上。在这种情况下，金属主体可以力锁定的方式(优选通过闩锁连接)或可以粘结的方式(优选通过粘合剂连接)而连接到所述第二部分主体。
有利的是，端子装置被实施为膜部段从而作为连接装置的一部分。
有利的是，端子装置可被实施为负载端子装置和/或被实施为辅助端子装置。负载和辅助端子装置同样可存在于所述子模块内。
所述端子装置之一可被实施为接触弹簧，并且可以力锁定和导电的方式连接到基材或连接装置。
所述端子装置之一可被实施为压配合接触件，并且可以粘结和导电的方式连接到基材或连接装置。
所述端子装置之一可被实施为金属成型的主体，并且可以力锁定的方式、优选以压力接触的方式或以粘结的方式连接到基材或连接装置，并且上述方式在每种情况下都是导电的方式，优选通过烧结连接或通过焊接连接进行。在其中存在力锁定连接的情况下，将力引入到金属成型主体上可优选通过第二部分主体来实现。
不言而喻的是，本发明的不同构造可以单独的方式或以任意组合的方式来实现以便获得改进。具体地，在不脱离本发明范围的情况下，在此处和下文所提及和解释说明的特征不仅可以所示的组合方式使用，而且可以其它组合方式使用，或自身单独使用。
附图说明
本发明的进一步的阐明、有利细节和特征从如图1至图4中所示的根据本发明布置的示例性实施例或其部分的以下描述是显明的。
图1示出根据本发明的子模块的第一构造。
图2示出具有根据本发明的子模块的第二构造的装置。
图3和图4示出根据本发明的子模块的第三构造的三维视图。
具体实施方式
图1示出根据本发明的子模块1的第一构造。该图示出从原则上而言在本领域内作为常规实施的基材2，并且包括绝缘材料主体20和导体轨道22，导体轨道22布置在绝缘材料主体20上并且分别彼此电绝缘，子模块1的所述导体轨道具有不同的电位，特别是负载电位，并且还具有辅助电位，特别是开关和测量电位。在此处具体示出具有负载电位的三个导体轨道22，这诸如是典型的半桥式拓扑结构。
相应的功率半导体组件24布置在两个导体轨道22上，该功率半导体组件可如本领域内常规的那样被实施为功率二极管或被实施为开关，例如被实施为MOS-FET或IGBT。相应的功率半导体组件24如本领域内常规的那样导电地连接到所述导体轨道22的所分配的一个导体轨道，优选通过烧结连接。
子模块1的内部连接通过连接装置3形成，所述连接装置3由膜复合体制成，所述膜复合体具有交替的导电膜30、34和电绝缘膜32。在此，膜复合体正好具有两个导电膜和布置在其间的一个绝缘膜。在这种情况下，膜复合体3的面向基材2的表面300形成第一主表面，而相反的表面形成第二主表面340。具体地，连接装置3的导电膜30、34为固有结构，因此形成彼此电绝缘的导体轨道部段。所述导体轨道部段具体地将相应的功率半导体组件24、更确切地是其在背离基材2的一侧上的接触区域，连接到基材的导体轨道22。在一个优选的构造中，导体轨道部段通过烧结连接粘结地连接到所述接触区域。不言而喻的是，功率半导体组件24之间以及基材2的导体轨道22之间的连接也可以相同的方式形成。
对于外部电气链路而言，子模块1具有负载和辅助端子元件4，在此只示出了一个辅助端子元件42。所述辅助端子元件42纯粹通过示例的方式被实施为接触弹簧，其以力锁定的方式通过接触脚而连接到基材2的导体轨道22。从原则上而言，连接装置3本身的部分也可被实施为负载或辅助端子元件。负载端子元件(未示出)此外可如本领域内常规的那样实施。
示出一个辅助端子元件42，并且有利的是还有另外的辅助端子元件(未示出)和负载端子元件(也未示出)布置在被实施为壳体或部分壳体的绝缘材料主体5的切除部524内，并且如果合适的话也以固定在其位置下的方式或可移动但被束缚的方式被安装在该处。
绝缘材料主体5本身在此被一体地实施为第一部分主体52以及第二部分主体54，所述第一部分主体52通过粘合剂连接而连接到基材2的边缘26，所述第二部分主体54布置成可相对于第一部分主体52以及因而也相对于基材2移动。为了形成可移动的布置，绝缘材料主体5具有两个中间主体58，在此被实施为凸耳。所述凸耳具有S形的走向，其允许第二部分主体54相对于第一部分主体52移动，特别是在垂直于基材2的方向上。
所述第二部分主体54在其面向基材2的一侧上具有切除部546以及布置在所述切除部546中并稍微突出的压力元件56。所述压力元件设置成在压力已经施加到第二部分主体54上之后按压到连接装置3的第二表面340的部段上，参照关于图2的描述。所述部段分别与下方布置的功率半导体组件24对准。第二部分主体54被具体实施为刚性的，以便能够将引入到其上的压力均匀地传递到压力元件56。为此目的以及针对在开关装置的操作过程中热负载的背景状况，第二部分主体54由耐高温的热塑性材料、特别是聚苯硫醚构成。压力元件56在操作期间必须能够施加大致恒定的压力并且在这种情况下特别是在不同的温度下亦如此。为此目的，压力元件56由硅橡胶构成，特别是所谓的交联的液体硅胶，也被称为液体硅橡胶(LSR，Liquid Silicone Rubber)，具有20至70、优选30至40的肖氏A硬度。这通过双组分注塑成型方法布置在第二部分主体54内。
所述第二部分主体54还具有扁平的金属主体540，在这种情况下在不限制一般性的情况下，所述金属主体540布置在背离基材一侧的另一切除部内。
在无负载的状态下，即在第二部分主体54上没有压力的状态下，后者即第二部分主体54以及因此特别还有压力元件56通过布置的功率半导体组件24并通过连接装置3与基材2间隔开。
图2以分解视图示出具有根据本发明的子模块1的第二构造的布置。在此该图示出子模块1，其与根据图1所示的不同之处在于：辅助端子元件的不同构造，在此辅助端子元件被实施为压力配合接触件44；不存在第二部分主体54的金属主体；以及连接装置3的背离基材2的表面上的附加涂层36。所述涂层36在一方面可被实施为灌封(potting)，或在另一方面被实施为附加的膜，并特别是用于防潮保护。所述涂层在此属于连接单元3本身，使得涂层的表面从而形成连接装置3的表面340。
在该布置中还示出如本领域内常规的用于从子模块1的功率半导体组件24散热的冷却装置6。为此目的，子模块1布置在冷却装置6的表面上，其中为此目的，如在本领域内常规的那样，导热膏60布置在基材2和冷却装置6之间。仅仅通过示例而不限制一般性的方式，冷却装置6在此被实施为空气冷却装置。
还纯粹示意性地示出压力引入装置7，它将压力引入到第二部分主体54的背离基材2的表面上。作为这种压力引入的结果，第二部分主体54相对于第一部分主体受到按压，第一部分主体连接到基材2的边缘26，因此在垂直于基材2的方向上、在基材2的方向上相对于基材不可移动。因此，压力元件56被按压到连接装置3的表面340的与功率半导体组件24对准的部段342上。优选地，还如图所示，连接装置3的压力引入到其上的部段342不与相应对准的功率半导体组件24突出的区域240重叠。
图3和图4示出根据本发明的子模块1的第三构造的三维视图，其中图3完全示出子模块，但没有负载端子元件，而图4示出通过子模块的剖面图。
附图首先示出基本上如本领域中常规那样的基材2，以及布置的功率半导体元件24和连接装置3，如关于图1所述的那样，以便子模块1的内部的符合电路的连接。在这种情况下，连接装置3覆盖功率半导体组件24，使得后者不直接可见，而是布置在连接装置的相应的较大矩形部段的下方。在此布置有可从具有栅极引线344的矩形识别的四个IGBT，和与其反向并联连接的从没有栅极引线的矩形识别的两个续流二极管，其共同形成半桥电路。
以与其间隔开的方式示出的是绝缘材料主体5，被一体地实施为第一部分主体52、第二部分主体54和连接所述部分主体的两个中间主体56，所述中间主体在此进而被实施为S形凸耳。第一部分主体52形成在基材2周围的框架，使得第一部分主体52的下边缘520定位在基材的边缘26上，且有利地还通过粘合剂连接而连接在该处。此外，第一部分主体52还具有部分地覆盖基材2的覆盖区域。多个切除部524布置在所述覆盖区域内，端子元件布置在所述切除部内。负载端子元件40和辅助端子元件42在此如本领域内常规的那样设置，其中在图3中仅示出辅助端子元件。
在图4所示的负载端子元件4纯粹通过示例的方式被实施为金属成型主体，其通过接触脚、有利地类似地通过焊接或烧结连接而粘结地连接到基材2的导体轨道22。
在基材2的方向上即在垂直于基材2的方向上可相对于第一部分主体移动的第二部分主体54在其背离基材的一侧上具有承载于其上的金属主体540，该金属主体通过闩锁装置58固定到第二部分主体54的绝缘主体上，所述闩锁装置58以不限制一般性的方式被实施为卡扣钩(snap-action hook)和两个止动元件544。所述金属主体540用于稳定性和均匀的压力分布。
图4还示出第二部分主体54的压力元件56，并且还有连接装置3的部段342，连接装置3的部段342被分配到所述压力元件56之一，并且当压力施加到第二部分主体时所压力元件将压力引入到连接装置3的部段342上。

Claims (13)

1.功率电子子模块(1)，其包括基材(2)、布置在基材(2)上的功率半导体组件(24)、连接装置(3)，并包括端子装置(4)以及绝缘材料主体(5)，所述基材(2)具有彼此电绝缘的导体轨道(22)，其中所述功率半导体组件(24)布置在导体轨道(22)上并且导电地连接到所述导体轨道(22)；
其中连接装置(3)被实施为膜复合体，其包括导电膜(30，34)和电绝缘膜(32)，从而形成面向功率半导体组件(24)和基材(2)的第一主表面(300)以及与所述第一主表面(300)相反的第二主表面(340)，并且其中所述子模块(1)通过连接装置(3)在内部以符合电路的方式连接；
其中绝缘材料主体(5)具有第一部分主体(52)，其连接到所述基材(2)的边缘(26)，并且具有适于端子装置(4)的第一切除部(524)；
其中绝缘材料主体(5)具有第二部分主体(54)，其被实施为压力主体并且具有第二切除部(546)，布置有从所述第二切除部(546)突出的压力元件(56)；
第一部分主体连接到第二部分主体以使得所述第二部分主体布置成能够在基材的方向上相对于第一部分主体移动，以便通过压力元件(56)按压到膜复合体的第二主表面(340)的部段(342)上，其中所述部段布置在功率半导体组件(24)的沿着垂直于功率半导体组件(24)的方向突出的区域(240)内。
2.根据权利要求1所述的子模块，其中：
所述第一部分主体(52)部分地或完全地连接到基材(2)的边缘(26)，优选以粘结的方式、优选通过粘合剂连接而连接到基材(2)的边缘(26)。
3.根据前述权利要求任一项所述的子模块，其中：
第一部分主体(52)和第二部分主体(54)实施为一体。
4.根据权利要求1所述的子模块，其中：
第一部分主体(52)和第二部分主体(54)通过弹性中间主体(58)连接到彼此，特别是通过弹性凸耳连接到彼此。
5.根据权利要求1所述的子模块，其中：
绝缘材料主体(5)由耐高温的热塑性材料构成，特别是由聚苯硫醚构成，以及压力元件(56)由硅橡胶构成，特别是由交联的液体硅胶构成。
6.根据权利要求1所述的子模块，其中：
金属主体(540)，优选扁平的金属主体(540)，布置在第二部分主体(52)的背离基材(2)的一侧上。
7.根据权利要求1所述的子模块，其中：
金属主体(540)以力锁定的方式连接到所述第二部分主体(54)，优选通过闩锁连接(542)或以粘结的方式、优选通过粘合剂连接而连接到所述第二部分主体(54)。
8.根据权利要求1所述的子模块，其中：
端子装置(4)被实施为负载端子装置(40)和/或被实施为辅助端子装置(42，44)。
9.根据权利要求1所述的子模块，其中：
所述端子装置(4)被实施为膜部段，从而被实施为连接装置(3)的一部分。
10.根据权利要求1所述的子模块，其中：
所述端子装置(4)被实施为接触弹簧，并且以力锁定和导电的方式连接到基材(2)或连接装置(3)。
11.根据权利要求1所述的子模块，其中：
所述端子装置(4)被实施为压配合接触件(44)，并且以粘结和导电的方式连接到基材(2)或连接装置(3)。
12.根据权利要求1所述的子模块，其中：
所述端子装置(4)被实施为金属成型的主体(40)，并且以力锁定的方式连接到基材(2)或连接装置(3)，优选以压力接触的方式或以粘结的方式连接到基材(2)或连接装置(3)，并且上述方式在每种情况下都是导电的方式，优选通过烧结连接或通过焊接连接进行连接。
13.根据权利要求12所述的子模块，其中：
在其中存在力锁定连接的情况下，将力引入到金属成型主体(40)上是通过第二部分主体(54)来实现的。
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Publication number Priority date Publication date Assignee Title
CN110534493A (zh) * 2018-05-25 2019-12-03 赛米控电子股份有限公司 具有塑料模制件和负载端子元件的模块和功率半导体器件

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017115879B4 (de) 2017-07-14 2021-07-22 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung eines leistungselektronischen Submoduls mittels eines Schweißenverfahrens
DE102017115883B4 (de) 2017-07-14 2020-04-02 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Submodul mit Gleich- und Wechselspannungsanschlusselementen und Anordnung hiermit
DE102017126716B4 (de) * 2017-11-14 2021-07-22 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleitermodul mit einer Schalteinrichtung
DE112018006776T5 (de) * 2018-01-05 2020-09-17 Mitsubishi Electric Corporation Halbleitervorrichtung
DE102020115831B4 (de) * 2020-06-16 2024-03-14 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung mit einer Druckeinrichtung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217465A1 (en) * 2001-10-10 2004-11-04 Thilo Stolze Power semiconductor module
CN101064299A (zh) * 2006-02-13 2007-10-31 塞米克朗电子有限及两合公司 压力接触构造的功率半导体模块
DE102008034953A1 (de) * 2008-07-26 2010-01-28 Semikron Elektronik Gmbh & Co. Kg Edelmetallverbindungsmittel und Verwendungsverfahren hierzu
CN104157635A (zh) * 2013-05-14 2014-11-19 赛米控电子股份有限公司 功率半导体模块和具有该功率半导体模块的系统
CN104157622A (zh) * 2013-05-14 2014-11-19 赛米控电子股份有限公司 功率电子开关装置和具有该功率电子开关装置的布置结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013109589B3 (de) * 2013-09-03 2015-03-05 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung
DE102014106570B4 (de) * 2014-05-09 2016-03-31 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit
DE102015111204B4 (de) * 2015-07-10 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Modul mit Lastanschlusselementen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217465A1 (en) * 2001-10-10 2004-11-04 Thilo Stolze Power semiconductor module
CN101064299A (zh) * 2006-02-13 2007-10-31 塞米克朗电子有限及两合公司 压力接触构造的功率半导体模块
DE102008034953A1 (de) * 2008-07-26 2010-01-28 Semikron Elektronik Gmbh & Co. Kg Edelmetallverbindungsmittel und Verwendungsverfahren hierzu
CN104157635A (zh) * 2013-05-14 2014-11-19 赛米控电子股份有限公司 功率半导体模块和具有该功率半导体模块的系统
CN104157622A (zh) * 2013-05-14 2014-11-19 赛米控电子股份有限公司 功率电子开关装置和具有该功率电子开关装置的布置结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110534493A (zh) * 2018-05-25 2019-12-03 赛米控电子股份有限公司 具有塑料模制件和负载端子元件的模块和功率半导体器件
CN110534493B (zh) * 2018-05-25 2024-04-09 赛米控电子股份有限公司 具有塑料模制件和负载端子元件的模块和功率半导体器件

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