CN101794742B - 按照压力接触方式实施的功率半导体模块 - Google Patents

按照压力接触方式实施的功率半导体模块 Download PDF

Info

Publication number
CN101794742B
CN101794742B CN201010004906.2A CN201010004906A CN101794742B CN 101794742 B CN101794742 B CN 101794742B CN 201010004906 A CN201010004906 A CN 201010004906A CN 101794742 B CN101794742 B CN 101794742B
Authority
CN
China
Prior art keywords
power semiconductor
substrate
pressure
pressure apparatus
cooling device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010004906.2A
Other languages
English (en)
Other versions
CN101794742A (zh
Inventor
马库斯·克内贝尔
彼得·贝克达尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of CN101794742A publication Critical patent/CN101794742A/zh
Application granted granted Critical
Publication of CN101794742B publication Critical patent/CN101794742B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2401—Structure
    • H01L2224/2402—Laminated, e.g. MCM-L type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/24226—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明介绍了一种按照压力接触方式实施的功率半导体模块(10)，用于设置在冷却构件(12)上。该功率半导体模块(10)具有至少一个衬底(14)，在所述衬底(14)上设置有功率半导体器件(20)。压力装置(26)用于使所述功率半导体器件(20)在所述至少一个衬底(14)上压力接触导通，以及用于从所述衬底(14)至冷却构件(12)的导热。将所述压力装置(26)构造为主动式冷却装置(28)。在根据本发明的功率半导体模块中，对于功率半导体器件的冷却方案得到改善。

Description

按照压力接触方式实施的功率半导体模块
技术领域
本发明涉及一种按照压力接触方式实施的、设置在冷却构件上的功率半导体模块，所述功率半导体模块具有至少一个衬底以及具有压力装置，在所述衬底上设有功率半导体器件，所述压力装置用于使所述功率半导体器件在所述至少一个衬底上压力接触导通，并且用于将所述至少一个衬底以导热的方式设置在所述冷却构件上。
背景技术
这种功率半导体模块以各种构造方式为人所知。例如DE10121970B4描述了一种按照压力接触方式实施的功率半导体模块。这种已知的功率半导体模块包括壳体；陶瓷衬底；适于电路地设置在该陶瓷衬底上的结构化的且导电的接触面；设置在该导电接触面上的器件；至少一个电连接这些器件的柔性印刷电路板；由柔性蓄能器及产生压力的压板组成的压力装置；以及电源接头和控制接头，其中，为了这些器件的彼此绝缘，而设置有柔性的绝缘材料，并且柔性印刷电路板通过凸耳状凸起部与这些器件和/或与衬底接触面的压力接触导通以如下方式形成，即，在借助于压力装置施加压力时形成可靠的导电连接。功率半导体模块的器件可以是功率二极管、功率晶闸管、功率晶体管等。
例如同样由DE102006006425A1公知一种按照压力接触方式实施的、设置在冷却构件上的功率半导体模块。
在已知的功率半导体模块中，压力装置用于向至少一个衬底和/或向功率半导体器件施加压力。已知功率半导体模块的压力装置不是设置用来导热的，而仅冷却构件是设置用来导热的，功率半导体模块的至少一个衬底设置在所述冷却构件上。
发明内容
本发明基于如下任务，即，完成开头所述类型的功率半导体模块，在这种功率半导体模块中，对于功率半导体器件的冷却方案得到改善。
根据本发明，该任务通过一种按照压力接触方式实施的功率半导体模块来解决，所述功率半导体模块用于设置在冷却构件上，所述功率半导体模块具有至少一个衬底和压力装置，在所述衬底上设置有功率半导体器件，所述压力装置用于使所述功率半导体器件在所述至少一个衬底上压力接触导通，以及用于将所述至少一个衬底以导热的方式设置在所述冷却构件上，其中，
将所述压力装置构造为主动式冷却装置，冷却介质穿流所述压力装置的所述主动式冷却装置，所述主动式冷却装置的所述冷却介质由冷却液形成；
设置所述压力装置的所述主动式冷却装置，用于使接触元件在所述功率半导体器件及在所述至少一个衬底的电路结构上压力接触导通，和/或用于使负载连接元件与所述至少一个衬底的所述电路结构压力接触导通；
将所述接触元件设置在柔性印刷电路板上。
在根据本发明的功率半导体模块中，不仅至少一个衬底的其中一侧上的冷却构件充当导热元件而且功率半导体模块的远离冷却构件的侧上的压力装置也充当导热元件，从而本发明的功率半导体模块能够以较大的功率运行。另一优点在于，由于冷却的改善，也延长了本发明功率半导体模块的使用寿命。必要时，利用本发明功率半导体模块，对安装可行性更为有利，这是因为：由于冷却构件可以小体积地构造，所以根据本发明的功率半导体模块的安装空间可以更小。
在本发明功率半导体模块中，冷却介质可以穿流所述压力装置的所述主动式冷却装置。所述压力装置的主动式冷却装置的冷却介质可以是冷却液。所述冷却液例如可以是水和乙二醇的混合物。
同样可行的是：所述压力装置的所述主动式冷却装置具有如同在笔记本电脑和个人电脑中应用的导热管（Heatpipe）。
在本发明的功率半导体模块中，所述压力装置的所述主动式冷却装置设置用于使接触元件压力与所述功率半导体器件和/或与所述至少一个衬底的所述电路结构压力接触导通，和/或用于使负载连接元件与所述至少一个衬底的所述电路结构压力接触导通。在此，接触元件可以设置在柔性印刷电路板上，类似于在开头引用的DE10121970B4中所描述的那样。这些负载连接元件可以分别具有与至少一个衬底平行的带状段，从所述带状段伸出接触脚，如在同样在开头引用的DE102006006425A1中描述的那样。这些连接元件以如下方式设置，即，这些连接元件的接触脚全部伸向相同方向。
本发明功率半导体模块的所述压力装置的主动式冷却装置可以构成桥式元件（Brückenelement），所述桥式元件与压板和弹性压力蓄能器组合，其中，所述压板与所述冷却构件以机械的方式夹紧（verspannen）。
不依赖于各种特别构造方案地，本发明功率半导体模块具有在两侧冷却因而改善冷却的优点，从而所述功率半导体元件能够以较高的功率运行，其中，该优点引起的另一优点是，该功率半导体器件的使用寿命比较长。
附图说明
由对根据本发明的功率半导体模块的在附图中示意性示出的实施例的以下说明得到其他细节、特征和优点，其中，理解为：本发明并不受限于示意性示出的实施方式，而是由权利要求来确定。
其中：
图1以示意性剖面图示出功率半导体模块的第一实施方式，
图2以类似于图1的示意性剖面图示出功率半导体模块的第二实施方式，以及
图3以类似于图1和图2的示意性剖面图示出功率半导体模块的第三实施方式。
具体实施方式
图1示出按照压力接触方式实施的、设置在冷却构件12（部分示出）上的功率半导体模块的一个实施方式。功率半导体模块10具有衬底14，衬底14是直接敷铜件（DCB）（Direct Copper Bonding）。衬底14在一侧大面积地具有金属层16。在衬底14的对置的另一侧上设置有结构化的金属层，也就是电路结构18。将功率半导体器件20设置在电路结构18上。为了将功率半导体器件20与电路结构18压力接触导通而设置有柔性印刷电路板22，柔性印刷电路板22具有触头24。柔性印刷电路板22借助于压力装置26压向功率半导体器件20以及压向衬底14的电路结构18，以使得功率半导体器件20在衬底14上压力接触导通。同时，压力装置26用于将衬底14以导热的方式设置在冷却构件12上。
将压力装置26构造为主动式冷却装置28。出于此目的，主动式冷却装置28构造有空腔30，输入管路32通入该空腔30，并且输送管路（Rohrleitung）34从该空腔30通出。通过输入管路32将冷却介质引入空腔30，该冷却介质是冷却液。
功率半导体器件20的损耗热量不仅在冷却构件12上输出而且还在主动式冷却装置28上输出，也就是说，处于空腔30中的冷却液被加热并且通过输送管路34从主动式冷却装置28排出已加热的冷却液。同时，通过主动式冷却装置28的输入管路32，将更新（frisch）的冷却液送入。
构成主动式冷却装置28的压力装置26形成桥式元件36，桥式元件36构造有压板38和弹性压力蓄能器40，其中，弹性压力蓄能器40设置在压板38与主动式冷却装置28之间，并且压板38与冷却构件12以机械的方式夹紧。这种机械的夹紧通过细的点划线42示意性示出。
图2示出功率半导体模块10的如下实施方式，该功率半导体模块10与图1所示实施例的不同之处在于：示出了负载连接元件44，所述负载连接元件44分别具有平行于衬底14的带状段46以及从该带状段46伸出的接触脚48。这些带状段46彼此是电绝缘的，并且针对构成主动式冷却装置28的压力装置26是电绝缘的。
相同的细节在图2中采用与图1相同的附图标记来标识，从而无需结合图2再次详细描述所有细节。
图3以类似于图1和图2的示意图示出按照压力接触方式实施的、设置在冷却构件12上的功率半导体模块10的构造方案。压力装置26与冷却构件12以机械的方式夹紧，压力装置26具有压板38、弹性压力蓄能器40以及带空腔30的桥式元件36。桥式元件36构成主动式冷却装置28，主动式冷却装置28例如压到负载连接元件上，并且通过该负载连接元件压到功率半导体器件20上。在桥式元件36与功率半导体器件20之间设置有绝缘层50，例如该绝缘层在DE102005053400A1中所描述的那样。
相同的细节在图3中采用与图1和图2相同的附图标记来标识，从而无需结合图3再次详细描述所有细节。
参考标记列表：
10    功率半导体模块
12    功率半导体模块10的冷却构件
14    功率半导体模块10的衬底
16    衬底14上的金属层
18    衬底14上用于功率半导体器件20的电路结构
20    功率半导体器件
22    功率半导体模块10的柔性印刷电路板
24    柔性印刷电路板22的触头
26    功率半导体模块10的压力装置
28    压力装置26的主动式冷却装置
30    主动式冷却装置28中的空腔
32    空腔30的输入管路
34    空腔30的输送管路
36    功率半导体模块10的用于压力装置26的桥式元件
38    压力装置26的压板
40    压力装置26的弹性压力蓄能器
42    点划线/压板38与冷却构件12之间的机械夹紧
44    功率半导体模块10的负载连接元件
46    负载连接元件44的带状段
48    负载连接元件44的接触脚
50    桥式元件36与功率半导体器件20之间的绝缘层

Claims (4)

1.按照压力接触方式实施的功率半导体模块，用于设置在冷却构件（12）上，所述功率半导体模块具有至少一个衬底（14）和压力装置（26），在所述衬底（14）上设置有功率半导体器件（20），所述压力装置（26）用于使所述功率半导体器件（20）在所述至少一个衬底（14）上压力接触导通，以及用于将所述至少一个衬底（14）以导热的方式设置在所述冷却构件（12）上，
其特征在于，
将所述压力装置（26）构造为主动式冷却装置（28），冷却介质穿流所述压力装置（26）的所述主动式冷却装置（28），所述主动式冷却装置（28）的所述冷却介质由冷却液形成；
设置所述压力装置（26）的所述主动式冷却装置（28），用于使接触元件（24）在所述功率半导体器件（20）及在所述至少一个衬底（14）的电路结构（18）上压力接触导通，和/或用于使负载连接元件（44）与所述至少一个衬底（14）的所述电路结构（18）压力接触导通；
将所述接触元件（24）设置在柔性印刷电路板（22）上。
2.根据权利要求1所述的功率半导体模块，
其特征在于，
所述压力装置（26）的所述主动式冷却装置（28）具有导热管。
3.根据权利要求1所述的功率半导体模块，
其特征在于，
所述负载连接元件（44）分别具有与所述至少一个衬底（14）平行的带状段（46），接触脚（48）从所述带状段（46）伸出。
4.根据权利要求1至3之一所述的功率半导体模块，
其特征在于，
所述压力装置（26）的所述主动式冷却装置（28）构成桥式元件（36），所述桥式元件（36）与压板（38）和弹性压力蓄能器（40）组合，其中，所述压板（38）与所述冷却构件（12）以机械的方式夹紧。
CN201010004906.2A 2009-01-23 2010-01-20 按照压力接触方式实施的功率半导体模块 Active CN101794742B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009005915.6 2009-01-23
DE102009005915A DE102009005915B4 (de) 2009-01-23 2009-01-23 Leistungshalbleitermodul in Druckkontaktausführung

Publications (2)

Publication Number Publication Date
CN101794742A CN101794742A (zh) 2010-08-04
CN101794742B true CN101794742B (zh) 2014-05-07

Family

ID=42199209

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010004906.2A Active CN101794742B (zh) 2009-01-23 2010-01-20 按照压力接触方式实施的功率半导体模块

Country Status (3)

Country Link
EP (1) EP2211384A3 (zh)
CN (1) CN101794742B (zh)
DE (1) DE102009005915B4 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013160788A1 (en) * 2012-04-23 2013-10-31 Koninklijke Philips N.V. Integrated electronics module with cooling structure
DE102012222959B4 (de) * 2012-12-12 2015-04-02 Semikron Elektronik Gmbh & Co. Kg Leistungsbauelementeinrichtung
DE102013203532A1 (de) * 2013-03-01 2014-09-04 Magna Powertrain Ag & Co. Kg Bauteilekühlung
DE102013104950B3 (de) * 2013-05-14 2014-04-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und Anordnung hiermit
DE102013104949B3 (de) * 2013-05-14 2014-04-24 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung und Anordnung hiermit
DE102014102493A1 (de) * 2014-02-26 2015-08-27 Infineon Technologies Bipolar Gmbh & Co. Kg Verbesserte Scheibenzelle für mehrere druckkontaktierte Halbleiterbauelemente
DE102015200548A1 (de) * 2015-01-15 2016-07-21 Zf Friedrichshafen Ag Anordnung zum Entwärmen von zumindest einem elektronischen Bauteil
CN104658921A (zh) * 2015-02-13 2015-05-27 无锡上能新能源有限公司 一种功率半导体器件的散热器装配工艺
DE102017211330A1 (de) * 2017-07-04 2019-01-10 Siemens Aktiengesellschaft Toleranzausgleichselement für Schaltbilder

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2160001C2 (de) * 1971-12-03 1974-01-10 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiteranordnung, insbesondere Thyristorbaugruppe
FR2765067B1 (fr) * 1997-06-19 1999-07-16 Alsthom Cge Alcatel Module d'electronique de puissance et un dispositif d'electronique de puissance pourvu de tels modules
DE10121970B4 (de) 2001-05-05 2004-05-27 Semikron Elektronik Gmbh Leistungshalbleitermodul in Druckkontaktierung
DE102004018476B4 (de) * 2004-04-16 2009-06-18 Infineon Technologies Ag Leistungshalbleiteranordnung mit kontaktierender Folie und Anpressvorrichtung
DE102004021122B4 (de) * 2004-04-29 2007-10-11 Semikron Elektronik Gmbh & Co. Kg Anordnung in Druckkontaktierung mit einem Leistungshalbleitermodul
JP2006186170A (ja) * 2004-12-28 2006-07-13 Nissan Motor Co Ltd 半導体装置
DE102006006425B4 (de) 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102006006424B4 (de) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren
JP4857017B2 (ja) * 2006-04-27 2012-01-18 日立オートモティブシステムズ株式会社 電力変換装置

Also Published As

Publication number Publication date
EP2211384A2 (de) 2010-07-28
DE102009005915B4 (de) 2013-07-11
EP2211384A3 (de) 2010-11-03
DE102009005915A1 (de) 2010-08-19
CN101794742A (zh) 2010-08-04

Similar Documents

Publication Publication Date Title
CN101794742B (zh) 按照压力接触方式实施的功率半导体模块
CN101071809B (zh) 功率半导体模块
CN103026804A (zh) 光电发光模块和汽车大灯
CN101241887B (zh) 具有接触弹簧的功率半导体模块
EP1986234A3 (en) Power semiconductor module for inverter circuit system
EP2146381A3 (en) Connecting device having a diode for connecting an electrical conductor to a connecting lead
US9443818B2 (en) Power semiconductor module
CN104838493A (zh) 功率模块
US9832874B2 (en) Method of forming a printed circuit board assembly
CN104426244B (zh) 无线充电装置
EP2706828B1 (en) Coupling assembly of power semiconductor device and PCB and method for manufacturing the same
JP2020501353A5 (zh)
TW201246700A (en) Plug connection for directly electrically contacting a circuit board
CN1216293C (zh) 探测装置
ATE542273T1 (de) ELEKTRISCHE ANSCHLUßVORRICHTUNG FÜR LEITENDE KONTAKTE, INSBESONDERE MESSERKONTAKTE
CN105451443A (zh) 印刷电路板
CN201508833U (zh) 一种用于绝缘栅双极型晶体管模块的基板
TWI268589B (en) Electronic apparatus with thermal module
CN101064300A (zh) Mosfet功率封装
CN201000887Y (zh) 散热片上的整流二极管裸晶体结构
CN209882211U (zh) Hdi高密度积层线路板
RU2011144091A (ru) Обеспечение прижимания для электронной схемы
CN202474274U (zh) 一种柔性印刷线路板连接器
CN204795841U (zh) 定位型柔性线路板
CN202374614U (zh) 一种电子设备散热结构及电子设备

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant