KR102237875B1 - 전력 반도체 모듈 및 이를 포함하는 장치 - Google Patents

전력 반도체 모듈 및 이를 포함하는 장치 Download PDF

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Publication number
KR102237875B1
KR102237875B1 KR1020140057787A KR20140057787A KR102237875B1 KR 102237875 B1 KR102237875 B1 KR 102237875B1 KR 1020140057787 A KR1020140057787 A KR 1020140057787A KR 20140057787 A KR20140057787 A KR 20140057787A KR 102237875 B1 KR102237875 B1 KR 102237875B1
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power semiconductor
pressing
connection
load
cooling
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KR20140134629A (ko
Inventor
고블 크리스티안
포프 라이너
레더러 마르코
바이스 스테판
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세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Power Conversion In General (AREA)
KR1020140057787A 2013-05-14 2014-05-14 전력 반도체 모듈 및 이를 포함하는 장치 Active KR102237875B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013104950.8 2013-05-14
DE102013104950.8A DE102013104950B3 (de) 2013-05-14 2013-05-14 Leistungshalbleitermodul und Anordnung hiermit

Publications (2)

Publication Number Publication Date
KR20140134629A KR20140134629A (ko) 2014-11-24
KR102237875B1 true KR102237875B1 (ko) 2021-04-07

Family

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KR1020140057787A Active KR102237875B1 (ko) 2013-05-14 2014-05-14 전력 반도체 모듈 및 이를 포함하는 장치

Country Status (5)

Country Link
EP (1) EP2804213B1 (enExample)
KR (1) KR102237875B1 (enExample)
CN (1) CN104157635B (enExample)
DE (1) DE102013104950B3 (enExample)
IN (1) IN2014MU01590A (enExample)

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* Cited by examiner, † Cited by third party
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DE102015112451B4 (de) 2015-07-30 2021-02-04 Danfoss Silicon Power Gmbh Leistungshalbleitermodul
DE102015114188B4 (de) * 2015-08-26 2019-03-07 Semikron Elektronik Gmbh & Co. Kg Leistungselektronisches Submodul mit einem zweiteiligen Gehäuse
DE102016119631B4 (de) 2016-02-01 2021-11-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Druckeinleitkörper und Anordnung hiermit
DE102016104283B4 (de) * 2016-03-09 2019-05-16 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung mit einem Leistungshalbleitermodul mit einem Gehäuse
DE102016110912B4 (de) * 2016-06-14 2018-03-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer Schalteinrichtung
DE102016113152B4 (de) * 2016-07-18 2019-12-19 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Schalteinrichtung und Leistungshalbleitermodul hiermit
EP3273473B1 (de) 2016-07-22 2020-09-09 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung
EP3273474A1 (de) 2016-07-22 2018-01-24 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung
EP3273470A1 (de) 2016-07-22 2018-01-24 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische schalteinrichtung, anordnung hiermit und verfahren zur herstellung der schalteinrichtung
DE102017107117B3 (de) * 2017-04-03 2018-05-17 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Schalteinrichtung und Anordnung hiermit
DE102017110722B4 (de) * 2017-05-17 2021-03-18 Semikron Elektronik Gmbh & Co. Kg Leistungselektronische Anordnung und elektrisches Fahrzeug hiermit
DE102018112552B4 (de) * 2018-05-25 2021-04-15 Semikron Elektronik Gmbh & Co. Kg Baugruppe mit einem Kunststoffformkörper und einer Mehrzahl von Lastanschlusselementen einer Leistungshalbleitereinrichtung und Leistungshalbleitereinrichtung hiermit
US11574894B2 (en) * 2018-07-11 2023-02-07 Dynex Semiconductor Limited Semiconductor device sub-assembly
DE102018217433A1 (de) * 2018-10-11 2020-04-16 Zf Friedrichshafen Ag Verfahren zum Herstellen einer Funktionsbauteilanordnung, Funktionsbauteilanordnung und Vorrichtung zum Durchführen des Verfahrens
DE102018131855A1 (de) * 2018-12-12 2020-06-18 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Druckkörper und mit einem Druckeinleitkörper, Leistungshalbleiteranordnung hiermit sowie Leistungshalbleitersystem hiermit
DE102019207012A1 (de) * 2019-05-15 2020-11-19 Zf Friedrichshafen Ag Elektronikmodul zur Leistungssteuerung
EP3979313B1 (de) * 2020-09-30 2022-11-30 SEMIKRON Elektronik GmbH & Co. KG Leistungselektronische einrichtung und leistungshalbleitermodul damit
DE102021115926B3 (de) * 2021-06-21 2022-09-01 Semikron Elektronik Gmbh & Co. Kg Druckeinrichtung zur mittelbaren oder unmittelbaren Einleitung von Druck auf Leistungshalbleiterbauelemente eines Leistungshalbleitermoduls

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353408A (ja) 2001-05-05 2002-12-06 Semikron Elektron Gmbh 圧力接触によるパワー半導体モジュール
DE102006027482B3 (de) 2006-06-14 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung

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US5267867A (en) * 1992-09-11 1993-12-07 Digital Equipment Corporation Package for multiple removable integrated circuits
DE102006006425B4 (de) 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102006006424B4 (de) * 2006-02-13 2011-11-17 Semikron Elektronik Gmbh & Co. Kg Anordnung mit mindestens einem Leistungshalbleitermodul und einem Kühlbauteil und zugehöriges Herstellungsverfahren
DE102006025531A1 (de) * 2006-06-01 2008-04-10 Semikron Elektronik Gmbh & Co. Kg Stromrichtermodul
DE102007003587B4 (de) * 2007-01-24 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Druckkörper
US7808100B2 (en) 2008-04-21 2010-10-05 Infineon Technologies Ag Power semiconductor module with pressure element and method for fabricating a power semiconductor module with a pressure element
DE102009005915B4 (de) * 2009-01-23 2013-07-11 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102009046403B4 (de) * 2009-11-04 2015-05-28 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontakttechnik
DE102010038723B4 (de) * 2010-07-30 2014-08-14 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einer Positioniervorrichtung für ein Substrat
DE102010062556A1 (de) * 2010-12-07 2012-06-14 Semikron Elektronik Gmbh & Co. Kg Halbleiterschaltungsanordnung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353408A (ja) 2001-05-05 2002-12-06 Semikron Elektron Gmbh 圧力接触によるパワー半導体モジュール
DE102006027482B3 (de) 2006-06-14 2007-08-16 Semikron Elektronik Gmbh & Co. Kg Gehauste Halbleiterschaltungsanordnung mit Kontakteinrichtung

Also Published As

Publication number Publication date
KR20140134629A (ko) 2014-11-24
CN104157635B (zh) 2018-03-27
EP2804213A1 (de) 2014-11-19
IN2014MU01590A (enExample) 2015-09-04
DE102013104950B3 (de) 2014-04-30
CN104157635A (zh) 2014-11-19
EP2804213B1 (de) 2018-04-04

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