CN104145000A - 电路连接材料及使用其的安装体的制造方法 - Google Patents

电路连接材料及使用其的安装体的制造方法 Download PDF

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CN104145000A
CN104145000A CN201380012143.8A CN201380012143A CN104145000A CN 104145000 A CN104145000 A CN 104145000A CN 201380012143 A CN201380012143 A CN 201380012143A CN 104145000 A CN104145000 A CN 104145000A
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particle
resin
circuit connection
conducting film
elastomerics
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浜地浩史
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Dexerials Corp
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Dexerials Corp
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Abstract

本发明提供具有优异的抗粘连性并同时具有优异的连接可靠性的电路连接材料，以及使用该材料的安装体的制造方法。在含有成膜树脂、自由基聚合性树脂和自由基聚合引发剂的粘接剂组合物中分散有压缩回复率为50%以上的弹性体粒子和导电性粒子。弹性体粒子具有可进行50%以上的变位的柔软性，由此在压合时可以对导电性粒子施加适宜的压力，因此可获得高的连接可靠性。并且弹性体粒子的压缩回复率为50%以上，由此可缓和卷的卷拧所产生的卷压，可防止粘连。

Description

电路连接材料及使用其的安装体的制造方法
技术领域
本发明涉及分散有导电性粒子的电路连接材料、以及使用该材料的安装体的制造方法。本申请以2012年3月2日在日本国申请的日本专利申请号特愿2012-046982为基础主张优先权，通过参照该申请，援引到本申请中。
背景技术
分散有导电性粒子的各向异性导电薄膜(ACF:Anisotropic Conductive Film)例如作为卷绕到具有法兰的卷轴上而成的卷绕体使用。该卷绕体中，各向异性导电薄膜根据例如温度条件等而伸缩，由此发生卷装体的卷拧（巻き絞り）。结果，各向异性导电薄膜的树脂层(粘接剂成分)沿着树脂层长度方向流动至宽度方向一端的外侧，可能从剥离基材的侧面渗出。树脂层若从剥离基材的侧面渗出，则各向异性导电薄膜中的树脂层附着于卷轴的法兰的侧面，发生无法正常牵拉各向异性导电薄膜的问题(以下称为“粘连”)。
专利文献1、2中记载，为了提高各向异性导电薄膜的抗粘连性而填充微粒子，从而适当抑制粘接剂组合物的流动。但是，在粘接剂组合物中填充微粒子时，可能有压合时未对导电性粒子施加适宜的压力，连接可靠性降低的问题。
现有技术文献
专利文献
专利文献１：日本特开2010-183049号公报
专利文献２：日本特开2003-249287号公报。
发明内容
发明所要解决的课题
本发明是针对这些以往的实际情况而提出，提供具有优异的抗粘连性并同时具有优异的连接可靠性的电路连接材料，以及使用该材料的安装体的制造方法。
解决课题的方案
本发明人进行了深入的研究，结果发现：通过配合具有高压缩回复率的弹性体粒子，抗粘连性和连接可靠性得到了改善。
即，本发明的电路连接材料的特征在于，在粘接剂组合物中分散有压缩回复率为50%以上的弹性体粒子和导电性粒子。
另外，本发明的安装体的制造方法的特征在于，具有以下工序：在第1电子部件的电极上依次配置各向异性导电薄膜、第2电子部件的工序，其中，所述各向异性导电薄膜是在含有成膜树脂、聚合性树脂、聚合引发剂的粘接剂组合物中分散有压缩回复率为50%以上的弹性体粒子和导电性粒子而成；和用压头从所述第2电子部件的上面按压的工序。
发明效果
本发明中，由于配合了具有高压缩回复率的弹性体粒子，因此可以缓和卷拧导致的卷压，获得优异的抗粘连性。另外，压合时可以对导电性粒子施加适宜的压力，因此可获得高的连接可靠性。
附图说明
[图1]图1是示意性显示卷绕到卷轴上的电路连接材料的截面图。
[图2]图2是示意性显示压合时弹性体粒子的平均粒径的影响的截面图。
[图3]图3是示意性显示本实施方案中压合时的端子部分的截面图。
具体实施方式
以下，一边参照附图一边按照下述顺序对本发明的实施方案进行详细说明：
1. 电路连接材料及其制造方法
2. 安装体及其制造方法
3. 实施例。
＜1．电路连接材料及其制造方法＞
作为本发明的具体例子示出的电路连接材料，是使具有高压缩回复率的弹性体粒子和导电性粒子分散在粘接剂组合物中而构成。该电路连接材料是糊或薄膜形状，可根据目的适当选择。
弹性体粒子的压缩回复率为50%以上。这里，关于压缩回复率，是在以弹性体粒子的直径为2amm、50%变位负载时的弹性体粒子的厚度为amm、去除负载后的厚度为bmm时，按照(b-a)/a×100(%)计算。
即，弹性体粒子具有可以进行50%以上的变位的柔软性。由此可以在压合时对导电性粒子施加适宜的压力，因此可以获得高的连接可靠性。另外，弹性体粒子的压缩回复率为50%以上，由此可以使卷的卷拧所产生的卷压缓和，可以防止粘接剂组合物附着于卷轴的法兰侧面、无法正常牵拉电路连接材料的粘连。
图1是示意性显示卷绕到卷轴上的电路连接材料的截面图。如图1所示，卷绕到卷轴上的电路连接材料被剥离基材20夹持。本实施方案中，粘接剂组合物10中存在弹性体粒子11，因此弹性体粒子11的回复力(回復しようとする力)作用于卷的卷拧所产生的卷压。由此可以使卷的卷拧所产生的卷压缓和。
作为弹性体粒子，只要满足所述压缩回复率的条件即可，没有特别限定，例如可举出聚氨酯、聚苯乙烯等的树脂粒子。其中优选使用聚氨酯粒子。
弹性体粒子的平均粒径优选为导电性粒子平均粒径的0.2倍以上5.0倍以下。由此可获得优异的抗粘连性和连接可靠性。弹性体粒子的平均粒径若比导电性粒子平均粒径的0.2倍小，则难以使卷的卷拧所产生的卷压缓和，抗粘连性降低。而弹性体粒子的平均粒径若比导电性粒子平均粒径的5.0倍大，则压合时难以对导电性粒子施加适宜的压力，连接可靠性降低。需说明的是，平均粒径例如可以是通过差示扫描电子显微镜观察的规定数目弹性体粒子或导电性粒子的粒径的平均值。
图2和图3是示意性显示压合时弹性体粒子的平均粒径的影响的截面图。该图2和图3显示通过加热加压使基板30上的布线和芯片40的凸块41进行连接的情形。如图2所示，弹性体粒子11的平均粒径相对于导电性粒子12足够大时，弹性体粒子11被凸块41压破时的回复力大，因此无法充分压破导电性粒子12，连接电阻值升高。而如本实施方案所示，通过使弹性体粒子的平均粒径为导电性粒子的平均粒径的0.2倍以上5.0倍以下，弹性体粒子11被凸块41压破时的回复力减小，可以充分压破导电性粒子12。
优选弹性体粒子的含量相对于粘接剂组合物为1wt%以上30wt%以下。由此可获得优异的抗粘连性和连接可靠性。弹性体粒子的含量若相对于粘接剂组合物低于1wt%，则难以使卷的卷拧所产生的卷压缓和，抗粘连性降低。而弹性体粒子的含量若相对于粘接剂组合物超过30wt%，则压合时粘接剂组合物的流动性降低，难以将导电性粒子从端子之间排除，连接可靠性降低。
另外，本实施方案的粘接剂组合物含有成膜树脂、聚合性树脂和聚合引发剂。
成膜树脂相当于平均分子量为10000以上的高分子量树脂，从成膜性方面考虑，优选为10000-80000左右的平均分子量。成膜树脂可举出苯氧基树脂、聚酯聚氨酯树脂(polyester urethane resin)、聚酯树脂、聚氨酯树脂、丙烯酸树脂、聚酰亚胺树脂、丁醛树脂等各种树脂，它们可单独使用，也可将2种以上组合使用。其中，从成膜状态、连接可靠性等方面考虑，优选使用苯氧基树脂。成膜树脂的含量是，相对于100质量份粘接剂组合物，通常为30-80质量份，优选40-70质量份。
聚合性树脂为自由基聚合性树脂、阳离子聚合性树脂等，可根据用途适当选择。
自由基聚合性树脂是具有通过自由基聚合的官能团的物質，可举出环氧丙烯酸酯、聚氨酯丙烯酸酯、聚酯丙烯酸酯等，它们可单独使用，也可以将2种以上组合使用。其中，在本实施方案中优选使用环氧丙烯酸酯。自由基聚合性树脂的含量是，相对于100质量份粘接剂组合物，通常为10-60质量份，优选20-50质量份。
使用自由基聚合性树脂时的自由基聚合引发剂可以使用公知的化合物，其中可优选使用有机过氧化物。有机过氧化物可举出：过氧化缩酮类、二酰基过氧化物类、过氧二碳酸酯(盐)类、过氧化酯类、二烷基过氧化物类、氢过氧化物类、甲硅烷基过氧化物类等，它们可单独使用，也可以将2种以上组合使用。其中，本实施方案中优选使用过氧化缩酮类。自由基聚合引发剂的含量是，相对于100质量份自由基系粘接剂组合物，通常为0.1-30质量份，优选1-20质量份。
阳离子聚合性树脂可使用单官能性环氧化合物、含杂环环氧树脂、脂肪族系环氧树脂等。特别优选将双酚A型环氧树脂、双酚F型环氧树脂、萘型环氧树脂、酚醛清漆型环氧树脂等的环氧树脂单独或混合使用。
使用阳离子聚合性树脂时的阳离子固化剂中，阳离子物类使环氧树脂末端的环氧基开环，使环氧树脂彼此进行自交联。这样的阳离子固化剂可举出：芳族锍盐、芳族重氮盐、碘鎓盐、鏻盐、硒鎓盐(selenonium)等的鎓盐。特别是芳族锍盐在低温下的反应性优异，适用期长，因此适合作为阳离子固化剂。
另外，为了提高与无机基材的密合性，优选粘接剂组合物进一步含有硅烷偶联剂等。硅烷偶联剂可举出甲基丙烯酰氧基系、环氧系、氨基系、乙烯基系、巯基•硫化物系、酰脲系等，它们可单独使用，也可以将2种以上组合使用。其中，本实施方案优选使用甲基丙烯酰氧基系硅烷偶联剂。
另外，分散于粘接剂组合物中的导电性粒子例如可使用镍、金、铜等金属粒子，在树脂粒子上实施了镀金等的粒子等。从连接可靠性方面考虑，导电性粒子的平均粒径优选1-20μm，更优选2-10μm。从连接可靠性和绝缘可靠性方面考虑，粘接剂组合物中导电性粒子的平均粒子密度优选为1000-50000个/mm2，更优选为5000-30000个/mm2。
接着，对包含所述电路连接材料的各向异性导电薄膜的制造方法进行说明。本实施方案中的各向异性导电薄膜的制造方法中，在含有成膜树脂、聚合性树脂和聚合引发剂的粘接剂组合物中分散压缩回复率为50%以上的弹性体粒子和导电性粒子。使它们溶解的有机溶剂可使用甲苯、乙酸乙酯或它们的混合溶剂、其它各种有机溶剂。
具体来说，首先对所述电路连接材料进行调整，然后使用刮棒涂布机、涂布装置等涂布在剥离基材上。剥离基材例如包含将有机硅等的剥离剂涂布于PET(聚对苯二甲酸乙二醇酯)、OPP(取向聚丙烯)、PMP(聚-4-甲基戊烯-1)、PTFE(聚四氟乙烯)等上而成的层合结构，可防止各向异性导电材料中树脂的干燥，同时保持树脂的形状。
接着，通过加热烘箱、加热干燥装置等使涂布于剥离基材上的各向异性导电材料干燥。由此可制造厚度5-50μm左右的各向异性导电薄膜。
另外，制造各向异性导电薄膜的卷绕体时，例如可切裁各向异性导电薄膜，一边使剥离基材的侧面与法兰的内面接触，一边将该各向异性导电薄膜卷取到卷取部，由此可获得卷绕体。
＜2．安装体的安装方法＞
接着，对使用所述电路连接材料的电子部件的安装方法进行说明。本实施方案的电子部件的安装方法具有以下工序：在第1电子部件的电极上依次配置各向异性导电薄膜、第2电子部件的工序，其中，所述各向异性导电薄膜是在含有成膜树脂、聚合性树脂和聚合引发剂的粘接剂组合物中分散压缩回复率为50%以上的弹性体粒子和导电性粒子而成；和用压头从第2电子部件的上面按压的工序。由此可以将第1电子部件的电极与第2电子部件的电极经由导电性粒子连接，同时使各向异性导电薄膜固化。
这里，第1电子部件可举出：在玻璃基板上涂布有IZO(氧化铟锌)膜的IZO涂布玻璃、在玻璃基板上涂布有SiNx(氮化硅)膜的SiNx涂布玻璃等。第2电子部件可举出COF(chip on film，封装于柔性膜上的芯片)、IC(集成电路)等。
本实施方案中，粘接剂组合物中含有压缩回复率为50%以上的弹性体粒子，因此在压合时可对导电性粒子施加适宜的压力，可获得高的连接可靠性。
实施例
＜3．实施例＞
以下对本发明的实施例进行说明。这里，制作压缩回复率不同的聚氨酯粒子作为弹性体粒子。然后，制作含有聚氨酯粒子的各向异性导电薄膜的卷样品。还使用各向异性导电薄膜制作安装体。作为评价项目，进行卷样品的粘连试验以及安装体的连接电阻的测定。需说明的是，本发明并不限定于这些实施例。
压缩回复率的测定、粘连试验的评价以及连接电阻的测定如下进行。
[压缩回复率的测定]
测定仪器使用Fisher-Scope H100C(Fischer Instruments制造)。在室温的试样台上，以压缩速度0.33mN/秒对聚氨酯粒子的中心方向施加载荷至50%的变位，保持5秒，然后以0.33mN/秒去除负载。然后，以变位负载前的聚氨酯粒子的直径为2amm、50%变位负载时的聚氨酯粒子的厚度为amm、去除负载后放置30分钟时的厚度为bmm，按照(b-a)/a×100(%)计算。
[粘连试验的评价]
在卷样品顶端悬挂75g重锤，在35℃的烘箱中放置3小时，然后牵拉各向异性导电薄膜，进行是否可以牵拉至最后的试验。进行5卷试验，5卷全部可以良好地牵拉至最后时，评价为○，发生至少1卷牵拉不良时，评价为×。
[连接电阻的测定]
对于安装体，使用数字万用表(数字万用表7555，横河电机社制造)，通过4端子法测定流过1mA电流时的初期连接电阻。
＜3.1 关于压缩回复率＞
[实施例1]
　　(聚氨酯粒子的制作)
首先制作聚氨酯粒子。在1000g离子交换水中溶解30g作为混悬稳定剂的磷酸三钙，制成分散介质。向其中添加70g具有3个羟基且分子量700的己内酰胺三醇，以及100g具有3个异氰酸酯基的无黄变型的聚异氰酸酯，以600rpm搅拌30分钟，制造混悬液。将该混悬液加入到3L烧瓶中，升温至70℃，然后以250rpm反应6小时，冷却后离心，进行固液分离。将其用水充分洗涤并干燥，得到平均粒径5μm的聚氨酯粒子(PU-1)。测定该聚氨酯粒子(PU-1)的压缩回复率，结果为90%。需说明的是，平均粒径采用通过差示扫描电子显微镜观察的10个聚氨酯粒子的粒径的平均值。
　　(各向异性导电薄膜的制作)
接着制作含有聚氨酯粒子的各向异性导电薄膜的卷样品。在按照固形成分换算为60质量份的苯氧基树脂(品名：YP-50，东都化成社制造)、15质量份自由基聚合性树脂(品名：EB-600，Daicel Cytec Co., Ltd.(ダイセル・サイテック社)制造)以及2质量份反应引发剂(品名：Perhexa C(パーヘキサC)，日本油脂社制造)所构成的粘接剂组合物中，以使平均粒子密度为10000个/mm2的方式分散平均粒径5μm的导电性粒子(品名：AUL704，积水化学工业社制造)。相对于上述粘接剂组合物，填充10wt%平均粒径5μm的聚氨酯粒子(PU-1)。使用刮棒涂布机，将该各向异性导电连接材料涂布于PET薄膜上，用烘箱干燥，制作厚度20μm的各向异性导电薄膜。
　　(卷样品的制作)
将各向异性导电薄膜切成1.5mm宽度，在塑料卷轴上卷取100M，制作卷样品。
　　(安装体的制作)
使用150μm厚的缓冲材料(聚四氟乙烯)，通过1.5mm宽度工具的预压合机，在70℃-1MPa-1秒的条件下，将切成1.5mm宽的各向异性导电薄膜预压合在评价用玻璃基板(IZO(氧化铟锌)250nm涂布玻璃)上。接着，用同一压合机，在80℃-0.5MPa-0.5秒的条件下，将评价用COF(50μmP、Cu8μmt-镀Sn、38μmt)临时固定，最后通过使用1.5mm宽度工具的正式压合机，以190℃-2MPa-10秒的条件进行压合，制作安装体。
　　(评价结果)
表1显示实施例1的评价结果。卷样品的粘连试验结果为○。连接电阻值为1.02Ω。
[实施例2]
添加100g具有2个异氰酸酯基的无黄变型异佛尔酮二异氰酸酯，除此之外与实施例1同样，得到平均粒径5μm的聚氨酯粒子(PU-2)。测定该聚氨酯粒子(PU-2)的压缩回复率，结果为50%。
与实施例1同样地制作含有聚氨酯粒子(PU-2)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
　　(评价结果)
表1显示实施例2的评价结果。卷样品的粘连试验结果为○。连接电阻值为1.12Ω。
[比较例1]
添加70g具有2个羟基且分子量2000的己内酰胺二醇，除此之外与实施例1同样，得到平均粒径5μm的聚氨酯粒子(PU-3)。测定该聚氨酯粒子(PU-3)的压缩回复率，结果为40%。
与实施例1同样地制作含有聚氨酯粒子(PU-3)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
　　(评价结果)
表1显示比较例1的评价结果。卷样品的粘连试验结果为×。连接电阻值为0.99Ω。
[比较例2]
使用Si填料代替聚氨酯粒子。该Si填料(Si-1)的压缩回复率由于填料破碎而无法测定。
与实施例1同样地制作含有Si填料(Si-1)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
　　(评价结果)
表1显示比较例2的评价结果。卷样品的粘连试验结果为○。连接电阻值为4.05Ω。
[表1]
实施例1 实施例2 比较例1 比较例2
弹性体粒子 PU-1 PU-2 PU-3 Si-1
平均粒径(μm) 5 5 5 5
压缩回复率(%) 90 50 40 无法测定
粒子含量(wt%) 10 10 10 10
粘连试验 ○ ○ × ○
连接电阻值(Ω) 1.02 1.12 0.99 4.05
如表1所示，使用压缩回复率低于50%的弹性体粒子的比较例1无法获得优异的抗粘连性。未使用弹性体粒子的比较例2中，连接电阻值升高。而如实施例1、2所示，通过使用压缩回复率为50%以上的弹性体粒子，可以使抗粘连性提高。而且，由于对导电性粒子施加了适宜的压力，可以使安装体的连接电阻值降低。
<3.2 关于平均粒径>
[实施例3]
在1000g离子交换水中溶解70g作为混悬稳定剂的磷酸三钙，制成分散介质，除此之外与实施例1同样，得到平均粒径1μm的聚氨酯粒子(PU-4)。测定该聚氨酯粒子(PU-4)的压缩回复率，结果为88%。
另外，与实施例1同样地制作含有聚氨酯粒子(PU-4)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
　　(评价结果)
表2显示实施例3的评价结果。卷样品的粘连试验结果为○。连接电阻值为1.04Ω。
[实施例4]
在1000g离子交换水中溶解5g作为混悬稳定剂的磷酸三钙，制成分散介质，除此之外与实施例1同样，得到平均粒径20μm的聚氨酯粒子(PU-5)。测定该聚氨酯粒子(PU-5)的压缩回复率，结果为84%。
另外，与实施例1同样地制作含有聚氨酯粒子(PU-5)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
(评价结果)
表2显示实施例4的评价结果。卷样品的粘连试验结果为○。连接电阻值为1.06Ω。
[比较例3]
在1000g离子交换水中溶解80g作为混悬稳定剂的磷酸三钙，制成分散介质，除此之外与实施例1同样，得到平均粒径0.5μm的聚氨酯粒子(PU-6)。测定该聚氨酯粒子(PU-6)的压缩回复率，结果为86%。
另外，与实施例1同样地制作含有聚氨酯粒子(PU-6)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
(评价结果)
表2显示比较例3的评价结果。卷样品的粘连试验结果为×。连接电阻值为1.00Ω。
[比较例4]
在1000g离子交换水中溶解2g作为混悬稳定剂的磷酸三钙，制成分散介质，除此之外与实施例1同样，得到平均粒径27μm的聚氨酯粒子(PU-7)。测定该聚氨酯粒子(PU-7)的压缩回复率，结果为88%。
另外，与实施例1同样地制作含有聚氨酯粒子(PU-7)的各向异性导电薄膜，制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
　　(评价结果)
表2显示比较例3的评价结果。卷样品的粘连试验结果为○。连接电阻值为2.04Ω。
[表2]
实施例3 实施例4 比较例3 比较例4
弹性体粒子 PU-4 PU-5 PU-6 PU-7
平均粒径(μm) 1 20 0.5 27
压缩回复率(%) 88 84 86 88
粒子含量(wt%) 10 10 10 10
粘连试验 ○ ○ × ○
连接电阻值(Ω) 1.04 1.06 1.00 2.04
如表2所示，弹性体粒子的平均粒径低于1μm、即，小于导电性粒子平均粒径的0.2倍时(比较例3)，难以缓和卷的卷拧所产生的卷压，未获得良好的抗粘连性。另外，弹性体粒子的平均粒径比25μm大、即，大于导电性粒子平均粒径的5.0倍时(比较例4)，压合时难以对导电性粒子施加适宜的压力，连接电阻值升高。而如实施例3、4所示，弹性体粒子的平均粒径为1μm以上25μm以下、即，弹性体粒子的平均粒径为导电性粒子平均粒径的0.2倍以上5.0倍以下时，可知获得了优异的抗粘连性和连接可靠性。
<3.3 关于含量>
[实施例5]
相对于所述粘接剂组合物填充1wt%聚氨酯粒子(PU-1)，制作各向异性导电薄膜，除此之外与实施例1同样地制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
(评价结果)
表3显示实施例5的评价结果。卷样品的粘连试验结果为○。连接电阻值为1.02Ω。
[实施例6]
相对于所述粘接剂组合物填充30wt%聚氨酯粒子(PU-1)，制作各向异性导电薄膜，除此之外与实施例1同样地制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
(评价结果)
表3显示实施例6的评价结果。卷样品的粘连试验结果为○。连接电阻值为1.03Ω。
[比较例5]
相对于所述粘接剂组合物填充0.5wt%聚氨酯粒子(PU-1)，制作各向异性导电薄膜，除此之外与实施例1同样地制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
(评价结果)
表3显示比较例5的评价结果。卷样品的粘连试验结果为×。连接电阻值为0.98Ω。
[比较例6]
相对于所述粘接剂组合物填充35wt%聚氨酯粒子(PU-1)，制作各向异性导电薄膜，除此之外与实施例1同样地制作卷样品。进而与实施例1同样，使用各向异性导电薄膜将评价用玻璃基板与评价用COF压合，制作安装体。
(评价结果)
表3显示比较例6的评价结果。卷样品的粘连试验结果为○。连接电阻值为3.05Ω。
[表3]
实施例5 实施例6 比较例5 比较例6
弹性体粒子 PU-1 PU-1 PU-1 PU-1
平均粒径(μm) 5 5 5 5
压缩回复率(%) 90 90 90 90
粒子含量(wt%) 1 30 0.5 35
粘连试验 ○ ○ × ○
连接电阻值(Ω) 1.02 1.03 0.98 3.05
如表3所示，弹性体粒子的含量相对于粘接剂组合物低于1wt%时(比较例5)，难以缓和卷的卷拧所产生的卷压，未获得良好的抗粘连性。弹性体粒子的含量相对于粘接剂组合物超过30wt%时(比较例6)，压合时粘接剂组合物的流动性降低，难以将导电性粒子从端子之间排除，连接电阻值升高。而如实施例5、6所示，弹性体粒子的含量相对于粘接剂组合物为1wt%以上30wt%以下时，可知获得了优异的抗粘连性和连接可靠性。
[符号说明]
10 粘接剂组合物、11　弹性体粒子、12　导电性粒子、20　剥离基材、30　基板、40　芯片、41　凸块。

Claims (5)

1. 一种电路连接材料，其为在粘接剂组合物中分散有导电性粒子和压缩回复率为50%以上的弹性体粒子而成的电路连接材料。
2. 权利要求1所述的电路连接材料，其中，所述弹性体粒子的平均粒径为所述导电性粒子平均粒径的0.2倍以上5.0倍以下。
3. 权利要求1或2所述的电路连接材料，其中，所述弹性体粒子的含量相对于所述粘接剂组合物为1wt%以上30wt%以下。
4. 权利要求1-3中任一项所述的电路连接材料，其中，所述粘接剂组合物含有成膜树脂、自由基聚合性树脂和自由基聚合引发剂，所述弹性体粒子为聚氨酯粒子。
5. 一种安装体的制造方法，该制造方法具有以下工序：
在第1电子部件的电极上依次配置各向异性导电薄膜、第2电子部件的工序，其中，所述各向异性导电薄膜是在含有成膜树脂、聚合性树脂、聚合引发剂的粘接剂组合物中分散有导电性粒子和压缩回复率为50%以上的弹性体粒子而成；和
用压头从所述第2电子部件的上面按压的工序。
CN201380012143.8A 2012-03-02 2013-02-27 电路连接材料及使用其的安装体的制造方法 Pending CN104145000A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1723590A (zh) * 2003-06-25 2006-01-18 日立化成工业株式会社 电路连接材料、使用其的薄膜状电路连接材料、电路构件的连接结构及其制造方法
CN102136309A (zh) * 2006-08-25 2011-07-27 日立化成工业株式会社 电路连接材料、使用其的电路部件的连接结构及其制造方法

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JP2003249287A (ja) * 2002-02-25 2003-09-05 Shin Etsu Polymer Co Ltd 異方導電性接着剤、ヒートシールコネクター及び接続構造
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1723590A (zh) * 2003-06-25 2006-01-18 日立化成工业株式会社 电路连接材料、使用其的薄膜状电路连接材料、电路构件的连接结构及其制造方法
CN102136309A (zh) * 2006-08-25 2011-07-27 日立化成工业株式会社 电路连接材料、使用其的电路部件的连接结构及其制造方法

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