CN104137224B - 压印装置和压印方法以及物品制造方法 - Google Patents

压印装置和压印方法以及物品制造方法 Download PDF

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Publication number
CN104137224B
CN104137224B CN201380010484.1A CN201380010484A CN104137224B CN 104137224 B CN104137224 B CN 104137224B CN 201380010484 A CN201380010484 A CN 201380010484A CN 104137224 B CN104137224 B CN 104137224B
Authority
CN
China
Prior art keywords
substrate
supply
gas
mold
supply outlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380010484.1A
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English (en)
Chinese (zh)
Other versions
CN104137224A (zh
Inventor
中川樹
中川一樹
江本圭司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN104137224A publication Critical patent/CN104137224A/zh
Application granted granted Critical
Publication of CN104137224B publication Critical patent/CN104137224B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
    • B29C39/02—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles
    • B29C39/12—Making multilayered or multicoloured articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2101/00—Use of unspecified macromolecular compounds as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2009/00—Layered products

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201380010484.1A 2012-02-27 2013-02-26 压印装置和压印方法以及物品制造方法 Expired - Fee Related CN104137224B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-039813 2012-02-27
JP2012039813A JP5868215B2 (ja) 2012-02-27 2012-02-27 インプリント装置およびインプリント方法、それを用いた物品の製造方法
PCT/JP2013/001092 WO2013128888A1 (en) 2012-02-27 2013-02-26 Imprint apparatus and imprint method, and article manufacturing method

Publications (2)

Publication Number Publication Date
CN104137224A CN104137224A (zh) 2014-11-05
CN104137224B true CN104137224B (zh) 2016-08-17

Family

ID=49082101

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380010484.1A Expired - Fee Related CN104137224B (zh) 2012-02-27 2013-02-26 压印装置和压印方法以及物品制造方法

Country Status (5)

Country Link
US (1) US10105892B2 (enExample)
JP (1) JP5868215B2 (enExample)
KR (1) KR101698253B1 (enExample)
CN (1) CN104137224B (enExample)
WO (1) WO2013128888A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP6294679B2 (ja) 2014-01-21 2018-03-14 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6525567B2 (ja) * 2014-12-02 2019-06-05 キヤノン株式会社 インプリント装置及び物品の製造方法
US10571801B2 (en) * 2014-12-09 2020-02-25 Canon Kabushiki Kaisha Coating apparatus, imprint apparatus, and method of manufacturing article
KR20180021725A (ko) * 2015-06-29 2018-03-05 닛산 가가쿠 고교 가부시키 가이샤 임프린트 재료
US10204780B2 (en) * 2015-09-08 2019-02-12 Canon Kabushiki Kaisha Imprint apparatus, and article manufacturing method
JP6702753B2 (ja) * 2016-02-17 2020-06-03 キヤノン株式会社 リソグラフィ装置、及び物品の製造方法
JP6313795B2 (ja) * 2016-03-03 2018-04-18 キヤノン株式会社 シャッタユニット、リソグラフィ装置、インプリント装置、及び物品の製造方法
JP6700949B2 (ja) * 2016-04-28 2020-05-27 キヤノン株式会社 インプリント方法及び物品の製造方法
JP6735656B2 (ja) * 2016-11-18 2020-08-05 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
KR102369538B1 (ko) 2017-09-28 2022-03-03 캐논 가부시끼가이샤 성형 장치 및 물품 제조 방법
JP7064310B2 (ja) * 2017-10-24 2022-05-10 キヤノン株式会社 インプリント装置、および物品製造方法
CN109828437A (zh) * 2017-11-23 2019-05-31 志圣工业股份有限公司 防黏板结构
JP7210155B2 (ja) * 2018-04-16 2023-01-23 キヤノン株式会社 装置、方法、および物品製造方法
JP7134790B2 (ja) 2018-08-28 2022-09-12 キオクシア株式会社 インプリント装置、インプリント方法、および半導体装置の製造方法
JP7149872B2 (ja) * 2019-02-14 2022-10-07 キヤノン株式会社 インプリント方法、インプリント装置、および物品の製造方法
JP7407579B2 (ja) * 2019-12-04 2024-01-04 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP7581033B2 (ja) * 2020-12-11 2024-11-12 キヤノン株式会社 インプリント装置、インプリント方法、物品の製造方法、およびコンピュータプログラム
US12353127B2 (en) * 2021-04-14 2025-07-08 Canon Kabushiki Kaisha Imprint apparatus, imprint method and article manufacturing method
JP7669199B2 (ja) 2021-06-07 2025-04-28 キヤノン株式会社 インプリント装置、インプリント方法、コンピュータプログラム、及び物品の製造方法
JP7676281B2 (ja) * 2021-09-27 2025-05-14 キヤノン株式会社 インプリント装置、インプリント方法、及び物品の製造方法
JP7759276B2 (ja) * 2022-02-16 2025-10-23 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
JP7731831B2 (ja) * 2022-03-11 2025-09-01 キオクシア株式会社 インプリント方法、半導体装置の製造方法、及びインプリント装置

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20110140304A1 (en) * 2009-12-10 2011-06-16 Molecular Imprints, Inc. Imprint lithography template
CN102162992A (zh) * 2010-02-24 2011-08-24 佳能株式会社 压印装置、用于压印装置中的模板、以及物品的制造方法
CN102200687A (zh) * 2010-03-24 2011-09-28 佳能株式会社 压印设备和制造物品的方法
US20110273684A1 (en) * 2008-06-17 2011-11-10 Nikon Corporation Nano-imprint method and apparatus
US20110290136A1 (en) * 2010-05-31 2011-12-01 Canon Kabushiki Kaisha Lithographic apparatus and manufacturing method of commodities

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US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8144309B2 (en) * 2007-09-05 2012-03-27 Asml Netherlands B.V. Imprint lithography
JP4892025B2 (ja) * 2008-09-26 2012-03-07 株式会社東芝 インプリント方法
JP2011230430A (ja) * 2010-04-28 2011-11-17 Toshiba Corp テンプレート補修方法、パターン形成方法及びテンプレート補修装置
JP5744422B2 (ja) 2010-06-17 2015-07-08 キヤノン株式会社 インプリント方法及びインプリント装置、サンプルショット抽出方法、並びにそれを用いた物品の製造方法
JP2012039057A (ja) * 2010-07-13 2012-02-23 Canon Inc インプリント装置及び物品の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110273684A1 (en) * 2008-06-17 2011-11-10 Nikon Corporation Nano-imprint method and apparatus
US20110140304A1 (en) * 2009-12-10 2011-06-16 Molecular Imprints, Inc. Imprint lithography template
CN102162992A (zh) * 2010-02-24 2011-08-24 佳能株式会社 压印装置、用于压印装置中的模板、以及物品的制造方法
CN102200687A (zh) * 2010-03-24 2011-09-28 佳能株式会社 压印设备和制造物品的方法
US20110290136A1 (en) * 2010-05-31 2011-12-01 Canon Kabushiki Kaisha Lithographic apparatus and manufacturing method of commodities

Also Published As

Publication number Publication date
US10105892B2 (en) 2018-10-23
WO2013128888A1 (en) 2013-09-06
JP2013175631A (ja) 2013-09-05
CN104137224A (zh) 2014-11-05
JP5868215B2 (ja) 2016-02-24
KR101698253B1 (ko) 2017-01-19
KR20140116209A (ko) 2014-10-01
US20150042012A1 (en) 2015-02-12

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Granted publication date: 20160817