CN104136448B - 钼烯丙基络合物和其于薄膜沉积中的用途 - Google Patents

钼烯丙基络合物和其于薄膜沉积中的用途 Download PDF

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Publication number
CN104136448B
CN104136448B CN201380010800.5A CN201380010800A CN104136448B CN 104136448 B CN104136448 B CN 104136448B CN 201380010800 A CN201380010800 A CN 201380010800A CN 104136448 B CN104136448 B CN 104136448B
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alkyl
independently
vapor deposition
organometallic complex
formula
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CN104136448A (zh
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拉杰什·奥德德拉
舒恩·葛瑞特
马克·史雷
拉维·坎裘莉亚
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Sigma Aldrich Co LLC
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Sigma Aldrich Co LLC
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
CN201380010800.5A 2012-01-26 2013-01-18 钼烯丙基络合物和其于薄膜沉积中的用途 Active CN104136448B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261591002P 2012-01-26 2012-01-26
US61/591,002 2012-01-26
US201261711770P 2012-10-10 2012-10-10
US61/711,770 2012-10-10
PCT/US2013/022260 WO2013112383A1 (en) 2012-01-26 2013-01-18 Molybdenum allyl complexes and use thereof in thin film deposition

Publications (2)

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CN104136448A CN104136448A (zh) 2014-11-05
CN104136448B true CN104136448B (zh) 2015-12-02

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US (1) US9175023B2 (https=)
EP (1) EP2807174B1 (https=)
JP (1) JP6209168B2 (https=)
KR (1) KR101532995B1 (https=)
CN (1) CN104136448B (https=)
IL (1) IL233786A (https=)
SG (1) SG11201404375PA (https=)
TW (1) TWI563112B (https=)
WO (1) WO2013112383A1 (https=)

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JP6346115B2 (ja) * 2015-03-24 2018-06-20 東芝メモリ株式会社 パターン形成方法
US10995405B2 (en) * 2016-02-19 2021-05-04 Merck Patent Gmbh Deposition of molybdenum thin films using a molybdenum carbonyl precursor
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102727616B1 (ko) 2016-10-07 2024-11-07 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
JP2022031988A (ja) * 2018-11-08 2022-02-24 株式会社Adeka 原子層堆積法による金属ルテニウム薄膜の製造方法
KR102355507B1 (ko) * 2018-11-14 2022-01-27 (주)디엔에프 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
KR20250116174A (ko) 2018-11-19 2025-07-31 램 리써치 코포레이션 텅스텐을 위한 몰리브덴 템플릿들
SG11202108217UA (en) 2019-01-28 2021-08-30 Lam Res Corp Deposition of metal films
SG11202109796QA (en) 2019-03-11 2021-10-28 Lam Res Corp Precursors for deposition of molybdenum-containing films
US12334351B2 (en) 2019-09-03 2025-06-17 Lam Research Corporation Molybdenum deposition
WO2021076636A1 (en) 2019-10-15 2021-04-22 Lam Research Corporation Molybdenum fill
JP7117336B2 (ja) 2020-01-30 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
KR102793252B1 (ko) 2020-03-25 2025-04-08 삼성전자주식회사 몰리브덴 화합물과 이를 이용한 집적회로 소자의 제조 방법
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置
US11584768B2 (en) * 2021-01-12 2023-02-21 Applied Materials, Inc. Arene molybdenum (0) precursors for deposition of molybdenum films
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
JP7686761B2 (ja) 2021-02-23 2025-06-02 ラム リサーチ コーポレーション ３ｄ－ｎａｎｄ用の酸化物表面上へのモリブデン膜の堆積
WO2022221210A1 (en) 2021-04-14 2022-10-20 Lam Research Corporation Deposition of molybdenum
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films
CN115702474A (zh) 2021-05-14 2023-02-14 朗姆研究公司 高选择性掺杂硬掩模膜
CN118318063A (zh) * 2021-11-10 2024-07-09 恩特格里斯公司 钼前驱物化合物
KR102731418B1 (ko) * 2021-12-13 2024-11-19 (주)디엔에프 몰리브데넘 화합물, 이의 제조방법 및 이를 포함하는 박막의 제조방법
US12595556B2 (en) 2023-03-02 2026-04-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Molybdenum imido alkyl/allyl complexes for deposition of molybdenum-containing films
CN121620608A (zh) * 2023-08-24 2026-03-06 大金工业株式会社 金属配位化合物

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US20140370192A1 (en) 2014-12-18
KR20140116223A (ko) 2014-10-01
IL233786A (en) 2017-02-28
JP6209168B2 (ja) 2017-10-04
TWI563112B (en) 2016-12-21
WO2013112383A1 (en) 2013-08-01
CN104136448A (zh) 2014-11-05
US9175023B2 (en) 2015-11-03
EP2807174B1 (en) 2016-03-30
SG11201404375PA (en) 2014-10-30
TW201335415A (zh) 2013-09-01
KR101532995B1 (ko) 2015-07-01
EP2807174A1 (en) 2014-12-03
IL233786A0 (en) 2014-09-30
JP2015510502A (ja) 2015-04-09

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