CN104134697B - 一种非对称肖特基源漏晶体管及其制备方法 - Google Patents
一种非对称肖特基源漏晶体管及其制备方法 Download PDFInfo
- Publication number
- CN104134697B CN104134697B CN201410392235.XA CN201410392235A CN104134697B CN 104134697 B CN104134697 B CN 104134697B CN 201410392235 A CN201410392235 A CN 201410392235A CN 104134697 B CN104134697 B CN 104134697B
- Authority
- CN
- China
- Prior art keywords
- medium
- channel
- drain
- metal
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 239000002070 nanowire Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 14
- 238000003746 solid phase reaction Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 238000010671 solid-state reaction Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 6
- -1 hafnium nitride Chemical class 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000001259 photo etching Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002353 field-effect transistor method Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
一种结合垂直沟道和非对称肖特基势垒源/漏结构的环栅MOS晶体管,包括一个垂直方向的环状半导体沟道(4),一个环状栅电极(6),一个环状栅介质层(5),一个源区(2),一个漏区(3),一个半导体衬底(1);其中,源区位于垂直沟道(4)的底部,与衬底相接;漏区位于垂直沟道的顶部;栅介质层和栅电极呈环状围绕住垂直沟道;源区和漏区分别与沟道形成不同势垒高度的肖特基接触;源漏所用金属材料不同。在与现有CMOS工艺兼容并且保持了传统GAA各种优点的条件下,该结构利用非对称肖特基势垒源/漏结构减小了漏电流、简化了工艺要求,并利用垂直沟道、环形栅结构突破了集成加工光刻极限限制,提高了集成度。
Description
技术领域
本发明属于CMOS超大集成电路(ULSI)中的场效应晶体管逻辑器件与电路领域,具体涉及一种结合垂直沟道和非对称肖特基势垒源/漏结构的环栅MOS晶体管及其制备方法。
背景技术
在摩尔定律的驱动下,传统MOSFET的特征尺寸不断缩小,如今已经到进入纳米尺度,随之而来,器件的短沟道效应等负面影响也愈加严重。漏致势垒降低、带带隧穿等效应使得器件关态漏泄电流不断增大。在对新型器件结构的研究中,源漏掺杂环栅(Gate AllAround transistor,GAA)结构是目前最受关注的一种。GAA器件具有更好的栅控特性,可以满足最尖锐的特性需求,从而适应器件尺寸缩小的需求,提高集成度。器件由于环形栅结构和纳米线沟道的特点,表现出很好的抑制短沟道效应性能。在制成水平沟道GAA器件的同时,可以注意到纳米线(NW)的排列方式决定了GAA结构存在应用垂直沟道的可能,目前已有关于掺杂源漏垂直沟道GAA器件的实验报道,相较水平沟道GAA器件,垂直沟道GAA器件的优势突出在两点:(1)可实现更高的集成度,(2)垂直沟道GAA的栅长不再由光刻能力决定,而是由栅材料的纵向厚度决定,这就可能突破集成加工的光刻极限。需要指出的是,此时单个垂直沟道GAA在栅长和栅宽(即纳米线的周长)两个维度都进入纳米尺度,而两个维度上都可以突破纳米加工的光刻极限。因此,垂直沟道GAA相较水平沟道GAA更具研发价值,也更富挑战性。
需要指出的是,垂直沟道的GAA结构具有良好的栅控能力,同样也面对着源漏设计的问题。对于传统的MOS场效应晶体管,为了抑制短沟道效应,必须采用超浅结和陡变掺杂的源/漏区,因而对热预算的要求极为苛刻。此外,纳米线的引入,使得GAA源漏设计较平面器件和多栅器件更为复杂。而High-K栅介质(介电常数K>3.9)与金属栅组合(HKMG)的热稳定问题,以及此后可能应用的SiGe、Ge和其他宽禁带材料对源漏设计同样存在热预算的需求。
发明内容
本发明的目的是提供一种结合垂直沟道和非对称肖特基势垒源/漏结构的环栅MOS场效应晶体管及其制备方法。在与现有CMOS工艺兼容并且保持了传统GAA各种优点的条件下,该结构利用非对称肖特基势垒源/漏结构减小了漏电流、简化了工艺要求,并利用垂直沟道、环形栅结构突破了集成加工光刻极限限制,提高了集成度。
本发明提供的技术方案如下:
一种结合垂直沟道和非对称肖特基势垒源/漏结构的环栅MOS晶体管,包括一个垂直方向的环状半导体沟道4,一个环状栅电极6,一个环状栅介质层5,一个源区2,一个漏区3,一个半导体衬底1;其中,源区2位于垂直沟道4的底部,与衬底1相接,漏区3位于垂直沟道4的顶部,栅介质层5和栅电极6呈环状围绕住垂直沟道4;源区2和漏区3分别与沟道4形成不同势垒高度的肖特基接触;源漏所用金属材料不同。
所述源区和漏区可为任何导电性良好的金属或金属与衬底材料形成的化合物。
本发明所述MOS晶体管的制备方法,包括以下步骤:
(1)在半导体衬底上通过半导体线条应力限制氢化或氧化工艺获取垂直纳米线;
(2)在衬底与纳米线表面沉积双层介质并光刻加工窗口;
(3)湿法腐蚀暴露源端纳米线,金属和硅固相反应(Solid Phase Reaction,SPR)形成埋源区;
(4)高密度等离子体(HDP)淀积回刻介质至填满为源区固相反应(SPR)打开的加工窗口,选择性腐蚀纳米线上介质层后淀积HKMG(High-K栅介质与金属栅组合)层,并形成栅极引线;
(5)沉积介质至将栅电极覆盖,此时沉积的介质厚度对应于MOS晶体管器件的设计栅长;
(6)选择性腐蚀High-K栅介质及栅电极层至漏极纳米线漏出;
(7)沉积介质形成栅/漏隔离,用和源区不同的金属和Si固相反应(SPR)形成漏极结构;
(8)最后进入常规CMOS后道工序,包括淀积钝化层、开接触孔以及金属化等,即可制得所述的MOS晶体管。
上述的制备方法中,所述步骤(1)中的半导体衬底材料选自Si、Ge、SiGe、GaAs或其他II-VI,III-V和IV-IV族的二元或三元化合物半导体、绝缘体上的硅(SOI)或绝缘体上的锗(GOI)。
上述的制备方法中,所述步骤(2)中的双层介质层材料,外层选自SiNx,内层选自二氧化硅、二氧化铪或氮化铪等。
上述的制备方法中,所述步骤(3)、(7)中的SPR金属材料选自Pt、Er、Co、Ni以及其他可与衬底半导体材料通过退火形成化合物的金属;两步中,金属选自不同种。
上述的制备方法中,所述步骤(4)中的High-K栅介质与金属栅组合层材料选自典型组合HfO2/TiN,也包括其他的系列氧化物,如HfSiON、HfZrO、HfMgO、HfAlO等材料。
上述的制备方法中,所述步骤(4)(5)中的介质层材料选自二氧化硅、二氧化铪或氮化铪等。
上述的制备方法中,所述步骤(7)中的介质层材料选自二氧化硅、二氧化铪或氮化铪等。
本发明的优点和积极效果:
(1)本发明继承了传统环栅结构晶体管的优点,例如良好的栅控能力、抑制短沟效应等;继承了垂直沟道结构的优点,突破纳米加工的光刻极限,极大提高了器件的集成度。
(2)本发明采用了肖特基势垒源/漏结构代替传统PN结,在High-K栅介质与金属栅组合层形成后不再需要注入和高温退火,彻底解决热稳定问题,也免除了潜在的GAA源漏的复杂掺杂设计,是一种具有优势的源漏解决方案。
(3)本发明采用了不对称肖特基势垒源/漏结构,即源漏材料由异种金属硅化物构成,形成不同肖特基势垒高度(SBH),这种结构通过调制源漏结SBH的配置,可以获得极小的关态电流,是一种很有价值的低功耗应用器件。
总而言之,该器件结构采用了垂直沟道结合不对称肖特基势垒源/漏结构,在继承传统GAA的优点的基础上,减小了漏电流,简化了工艺,并且提高了集成度。
附图说明
图1是本发明的垂直沟道非对称肖特基势垒源漏环栅晶体管的器件示意图;
图2是半导体线条应力限制氢化/氧化工艺获取垂直纳米线后,沿图1中AA’方向的器件剖面图;
图3是在衬底与纳米线表面沉积双层介质并光刻加工窗口后,沿图1中AA’方向的器件剖面图;
图4是湿法腐蚀衬底上介质层后进行金属和Si固相反应(SPR)形成埋源区后,沿图1中AA’方向的器件剖面图;
图5是在高密度等离子体(HDP)淀积回刻介质至填满为源区SPR打开的加工窗口,选择性腐蚀纳米线上介质层后淀积HKMG层,形成栅极引线,沿图1中AA’方向的器件剖面图;
图6是沉积介质至将栅电极覆盖后,沿图1中AA’方向的器件剖面图;
图7是选择性腐蚀High-K栅介质及栅电极层至漏极纳米线漏出,沉积介质形成栅/漏隔离后,沿图1中AA’方向的器件剖面图;
图8是金属(异于源区材料)和Si固相反应(SPR)形成漏极结构后,本发明的垂直沟道非对称肖特基势垒源漏环栅晶体管沿图1中AA’方向的器件剖面图;
图中:
1-----------半导体衬底 2-------------肖特基源区
3-----------肖特基漏区 4-------------沟道区
5-----------High-K栅介质层 6-------------Metal Gate栅电极层
7-----------二氧化硅介质层 8-------------SiNx介质层
具体实施方式
本发明提供了一种新型结构的MOS晶体管,具体为一种结合垂直沟道和非对称肖特基势垒源/漏结构的环栅MOS晶体管(如图1所示),包括一个垂直方向的环状半导体沟道4,一个环状栅电极6,一个环状栅介质层5,一个源区2,一个漏区3,一个半导体衬底1;其中,源区2位于垂直沟道4的底部,与衬底1相接,漏区3位于垂直沟道4的顶部,栅介质层5和栅电极6呈环状围绕住垂直沟道4;源区2和漏区3分别与沟道4形成不同势垒高度的肖特基接触。
所述源区和漏区可为任何导电性良好的金属或金属与衬底材料形成的化合物,并且源漏材料不同。
本发明制备方法的具体实例包括图2至图8所示的工艺步骤:
(1)在晶向为(100)的体硅硅片硅衬底1上采用Si线条应力限制氢化或氧化工艺获取垂直Si纳米线4,直径5nm,长度100nm,如图2所示;
(2)在衬底与纳米线表面沉积双层介质7(SiO2)和8(SiNx),围绕纳米线光刻加工窗口(包含后续电极引出图形,不需要精细尺寸加工),纳米线上方的硬刻蚀掩蔽层保证纳米线不会受损,如图3所示;
(3)打开上层介质8(SiNx)之后,湿法腐蚀去除底层介质7(SiO2),至衬底表面,此过程对Si材料无损伤,在保证源端部分纳米线暴露出来后,进行金属(如Ni)和硅固相反应(SPR),在暴露Si的对应区域形成源端硅化物2。此过程中,沟道区域的纳米线有介质包裹不会受到影响,如图4所示;
(4)采用高密度等离子体(HDP)淀积回刻介质7(SiO2)至填满为源区SPR打开的加工窗口,选择性腐蚀纳米线上包裹介质8(SiNx),之后低温原子层沉积法(ALD法)沉积HKMG材料5和6(如HfO2/TiN),对HKMG的图形化形成了栅极的引线(无需精细尺寸加工),HKMG厚度约为20nm,如图5所示;
(5)沉积介质7(SiO2)至将栅电极覆盖起来(HDP法沉积),此时沉积的介质厚度50nm对应了器件的设计栅长,如图6所示;
(6)选择性腐蚀HKMG,至漏极NW露出,沉积介质7(SiO2)形成栅/漏隔离,如图7所示;
(7)再进行金属(异于源区,如Pt)和硅固相反应(SPR)并完成图形化就可以获得漏极结构3。如图8所示;
(8)最后进入常规CMOS后道工序,包括淀积钝化层、开接触孔以及金属化等,即可制得所述的结合垂直沟道和非对称肖特基势垒源/漏结构的环栅MOS场效应晶体管。
Claims (7)
1.一种环栅MOS晶体管的制备方法,其特征是,包括以下步骤:
(1)在半导体衬底上通过半导体线条应力限制氢化或氧化工艺获取垂直纳米线;
(2)在衬底与纳米线表面沉积双层介质并光刻加工窗口;
(3)湿法腐蚀暴露源端纳米线,金属和硅固相反应形成埋源区;
(4)高密度等离子体淀积回刻介质至填满为源区固相反应打开的加工窗口,选择性腐蚀纳米线上介质层后淀积High-K栅介质与金属栅组合层,并形成栅极引线;
(5)沉积介质至将栅电极覆盖,此时沉积的介质厚度对应于MOS晶体管器件的设计栅长;
(6)选择性腐蚀High-K栅介质及栅电极层至漏极纳米线漏出;
(7)沉积介质形成栅/漏隔离,用和源区不同的金属和Si固相反应形成漏极结构;
(8)最后进入常规CMOS后道工序,包括淀积钝化层、开接触孔以及金属化,即可制得所述的MOS晶体管。
2.如权利要求1所述的制备方法,其特征是,所述步骤(1)中的半导体衬底材料选自Si、Ge、SiGe、GaAs或其他II-VI,III-V和IV-IV族的二元或三元化合物半导体、绝缘体上的硅或绝缘体上的锗。
3.如权利要求1所述的制备方法,其特征是,所述步骤(2)中的双层介质层材料,外层选自SiNx,内层选自二氧化硅、二氧化铪或氮化铪。
4.如权利要求1所述的制备方法,其特征是,所述步骤(3)和(7)中的SPR金属材料选自Pt、Er、Co、Ni以及其他可与衬底半导体材料通过退火形成化合物的金属;两步中,金属选自不同种。
5.如权利要求1所述的制备方法,其特征是,所述步骤(4)中的High-K栅介质与金属栅组合层材料选自HfO2/TiN。
6.如权利要求1所述的制备方法,其特征是,所述步骤(4)和(5)中的介质层材料选自二氧化硅、二氧化铪或氮化铪。
7.如权利要求1所述的制备方法,其特征是,所述步骤(7)中的介质层材料选自二氧化硅、二氧化铪或氮化铪。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410392235.XA CN104134697B (zh) | 2014-08-11 | 2014-08-11 | 一种非对称肖特基源漏晶体管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410392235.XA CN104134697B (zh) | 2014-08-11 | 2014-08-11 | 一种非对称肖特基源漏晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104134697A CN104134697A (zh) | 2014-11-05 |
CN104134697B true CN104134697B (zh) | 2017-02-15 |
Family
ID=51807301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410392235.XA Active CN104134697B (zh) | 2014-08-11 | 2014-08-11 | 一种非对称肖特基源漏晶体管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104134697B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779272B (zh) * | 2015-04-10 | 2016-04-06 | 京东方科技集团股份有限公司 | 薄膜晶体管和阵列基板及其制作方法、显示装置 |
CN111162074B (zh) * | 2018-11-07 | 2022-07-26 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN109712878B (zh) * | 2018-12-28 | 2020-12-11 | 上海集成电路研发中心有限公司 | 场效应管及半导体器件的制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101552286A (zh) * | 2009-04-14 | 2009-10-07 | 西安电子科技大学 | 金属-半导体场效应晶体管及其制作方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011162725A1 (en) * | 2010-06-25 | 2011-12-29 | Agency For Science, Technology And Research | Nanowire transistor and method for manufacturing a nanowire transistor |
-
2014
- 2014-08-11 CN CN201410392235.XA patent/CN104134697B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101552286A (zh) * | 2009-04-14 | 2009-10-07 | 西安电子科技大学 | 金属-半导体场效应晶体管及其制作方法 |
Non-Patent Citations (2)
Title |
---|
Vertical nanowire array-based field effect transistors for ultimate scaling;G. Larrieu et al.;《Nanoscale》;20130121;第2437-2441页,附图1a、2 * |
新型源漏结构MOSFET的设计和工艺制备研究;李定宇;《中国博士学位论文全文数据库信息科技辑》;20080915;第7页、第24-31页 * |
Also Published As
Publication number | Publication date |
---|---|
CN104134697A (zh) | 2014-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104157686B (zh) | 一种环栅场效应晶体管及其制备方法 | |
CN104201205B (zh) | 一种芯‑壳场效应晶体管及其制备方法 | |
CN104201195B (zh) | 一种无结场效应晶体管及其制备方法 | |
CN109728090A (zh) | 一种半导体器件及其形成方法 | |
CN101908561B (zh) | 半导体器件以及制造半导体器件的方法 | |
CN104617137B (zh) | 一种场效应器件及其制备方法 | |
CN105322015A (zh) | 栅极结构及其制造方法 | |
WO2017035780A1 (zh) | 隧穿场效应晶体管及其制备方法 | |
CN104157687B (zh) | 一种垂直环栅隧穿晶体管及其制备方法 | |
US11728418B2 (en) | Tunnel field-effect transistor with reduced trap-assisted tunneling leakage | |
US10361284B2 (en) | Method for vertical gate-last process | |
CN110416311A (zh) | 一种非对称沟道介质环场效应晶体管 | |
CN104134697B (zh) | 一种非对称肖特基源漏晶体管及其制备方法 | |
CN102082096A (zh) | 一种Ge或SiGe纳米线场效应晶体管的制备方法 | |
CN105810730B (zh) | 半导体装置及其制造方法 | |
CN104810405B (zh) | 一种隧穿场效应晶体管及制备方法 | |
CN104425269B (zh) | 鳍式场效应晶体管及其形成方法 | |
CN104134701B (zh) | 一种杂质分凝肖特基源漏器件及其制备方法 | |
CN104425606B (zh) | 隧穿场效应晶体管及其形成方法 | |
Jönsson et al. | Balanced drive currents in 10–20 nm diameter nanowire All-III-V CMOS on Si | |
CN106328522B (zh) | 一种类Fin结构III-V族半导体场效应晶体管及其制备方法 | |
TWI628747B (zh) | 互補式金屬氧化物半導體元件的製造方法 | |
US9748379B2 (en) | Double exponential mechanism controlled transistor | |
CN108063143A (zh) | 一种互补晶体管器件结构及其制作方法 | |
CN110491940A (zh) | 一种基于共振隧穿的纳米线晶体管及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |