CN104134605B - 绘制装置和半导体器件的制造方法 - Google Patents

绘制装置和半导体器件的制造方法 Download PDF

Info

Publication number
CN104134605B
CN104134605B CN201410169262.0A CN201410169262A CN104134605B CN 104134605 B CN104134605 B CN 104134605B CN 201410169262 A CN201410169262 A CN 201410169262A CN 104134605 B CN104134605 B CN 104134605B
Authority
CN
China
Prior art keywords
charged particle
substrate
particle beams
shot
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410169262.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN104134605A (zh
Inventor
村木真人
平田吉洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN104134605A publication Critical patent/CN104134605A/zh
Application granted granted Critical
Publication of CN104134605B publication Critical patent/CN104134605B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31766—Continuous moving of wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201410169262.0A 2013-04-30 2014-04-25 绘制装置和半导体器件的制造方法 Active CN104134605B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013095960A JP6193611B2 (ja) 2013-04-30 2013-04-30 描画装置、及び物品の製造方法
JP2013-095960 2013-04-30

Publications (2)

Publication Number Publication Date
CN104134605A CN104134605A (zh) 2014-11-05
CN104134605B true CN104134605B (zh) 2017-05-24

Family

ID=51789514

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410169262.0A Active CN104134605B (zh) 2013-04-30 2014-04-25 绘制装置和半导体器件的制造方法

Country Status (5)

Country Link
US (1) US9455124B2 (enExample)
JP (1) JP6193611B2 (enExample)
KR (1) KR101790829B1 (enExample)
CN (1) CN104134605B (enExample)
TW (1) TWI516858B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
US9984853B2 (en) 2014-11-28 2018-05-29 Nuflare Technology, Inc. Method for generating writing data
JP6548982B2 (ja) * 2014-11-28 2019-07-24 株式会社ニューフレアテクノロジー 描画データの作成方法
JP6593090B2 (ja) * 2015-10-20 2019-10-23 株式会社ニューフレアテクノロジー 支持ケース及びマルチ荷電粒子ビーム描画装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62144323A (ja) 1985-12-19 1987-06-27 Toshiba Corp 荷電ビ−ム露光装置
JP4818501B2 (ja) * 2000-09-12 2011-11-16 三菱電機株式会社 電子ビーム露光装置
SG125923A1 (en) 2002-09-20 2006-10-30 Asml Netherlands Bv Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure
CN101681809B (zh) 2007-12-28 2012-04-25 株式会社尼康 曝光装置、曝光方法以及器件制造方法
JP5480496B2 (ja) 2008-03-25 2014-04-23 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
US8405923B2 (en) * 2008-08-01 2013-03-26 Pioneer Corporation Electron beam recording apparatus, controller for the same, and method for controlling same
EP2556527B1 (en) 2010-04-09 2017-03-22 Carl Zeiss Microscopy GmbH Charged particle detection system and multi-beamlet inspection system
JP5835892B2 (ja) * 2010-12-27 2015-12-24 キヤノン株式会社 荷電粒子線描画装置及びデバイス製造方法
JP5832141B2 (ja) 2011-05-16 2015-12-16 キヤノン株式会社 描画装置、および、物品の製造方法
JP5859778B2 (ja) * 2011-09-01 2016-02-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Also Published As

Publication number Publication date
US9455124B2 (en) 2016-09-27
US20140322653A1 (en) 2014-10-30
TWI516858B (zh) 2016-01-11
KR101790829B1 (ko) 2017-10-26
JP6193611B2 (ja) 2017-09-06
KR20140130028A (ko) 2014-11-07
CN104134605A (zh) 2014-11-05
TW201441758A (zh) 2014-11-01
JP2014216630A (ja) 2014-11-17

Similar Documents

Publication Publication Date Title
US9236224B2 (en) Drawing apparatus and method of manufacturing article
US9171698B2 (en) Drawing apparatus, and method of manufacturing article
CN104134605B (zh) 绘制装置和半导体器件的制造方法
US9293292B2 (en) Drawing apparatus, and method of manufacturing article
US9040935B2 (en) Blanking apparatus, drawing apparatus, and method of manufacturing article
KR20150018397A (ko) 묘화 데이터 생성 방법, 처리 장치, 기억 매체, 묘화 장치, 및 물품의 제조 방법
US20150131075A1 (en) Drawing apparatus, and method of manufacturing article
JP2015037104A (ja) 描画装置、および物品の製造方法
JP6484431B2 (ja) 荷電粒子ビーム露光装置及び荷電粒子ビーム露光方法
US20150129779A1 (en) Drawing apparatus, and method of manufacturing article
US8927945B2 (en) Drawing apparatus and method of manufacturing article by controlling drawing on shot region side of boundary of shot regions
US20160126061A1 (en) Drawing apparatus and device manufacturing method
US20150187540A1 (en) Drawing apparatus and method of manufacturing article
US10361067B2 (en) Drawing apparatus, and method of manufacturing article by controlling a plurality of charged particle optical systems based on respective sets of sub-drawing regions
JP2025162381A (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2016115811A (ja) 描画装置、及び物品の製造方法
JP2005183540A (ja) 露光方法及びマスク
JP2016086101A (ja) リソグラフィ装置、および物品の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant