CN104080946B - 用于制造薄层的装置和方法 - Google Patents

用于制造薄层的装置和方法 Download PDF

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CN104080946B
CN104080946B CN201280038501.8A CN201280038501A CN104080946B CN 104080946 B CN104080946 B CN 104080946B CN 201280038501 A CN201280038501 A CN 201280038501A CN 104080946 B CN104080946 B CN 104080946B
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substrate
conveying belt
gas
apcvd
devices
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CN104080946A (zh
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C·施密德
D·哈贝尔曼
J·豪恩格斯
C·阿特马
T·斯图尔特
K·普罗文查
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Gebrueder Schmid GmbH and Co
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Gebrueder Schmid GmbH and Co
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C16/45502—Flow conditions in reaction chamber
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    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
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    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
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Abstract

一种用于在制造太阳能电池时在衬底上制造薄层的装置，其中，采用APCVD方法在高于250℃的温度情况下敷设薄层，在该装置中，衬底在连续运行中在水平的输送带上被输送，并通过APCVD涂层法被涂层。在此，输送带具有输送轮，所述输送轮由耐热的非金属的材料优选陶瓷。在输送带的背离涂层装置的一侧设置有加热机构和/或喷淋气体供应机构。

Description

用于制造薄层的装置和方法
技术领域
本发明涉及一种用于在衬底上制造薄层的装置以及一种利用这种装置连续地制造薄层的方法。
背景技术
已知在大气压力下借助化学气相沉积(APCVD)进行太阳能电池制造时在衬底上沉积或制得薄层。由于这种方法的相对高的温度，通常明显高于250℃，要涂层的衬底往往在金属带上或者在携载器中输送。金属带通常由基于镍和铬的合金构成，而携载器常常由碳复合材料或者石墨构成。这些输送系统在涂层装置经过之后必须麻烦地清洁，这可以顺序地或者连续地进行。
在此，金属带还具有的问题是，由半导体材料比如硅和GaAs构成的衬底，在与金属沾染的情况下，其功效明显丧失。替代地，接下来必须进行很麻烦的清洁，或者另选前述携载器。清洁步骤大大地提高了生产成本。对于大规模生产来说，比如在太阳能电池制造情况下，带有携载器的输送系统也不适合，因为在装载和卸载时的机械应力会导致断裂风险增大。这尤其在制造厚度小于150微米的太阳能电池时适用于当前越来越薄的衬底的发展趋势。通常实现为环绕的环形带的金属带的另一问题是，原则上需要大量能量进行带加热。一方面，必须对相对大量的带材料进行加热，另一方面又要分别在相应加热机构或涂层区段之外的区域中对带进行冷却。由此会造成温度局限于约600℃。但有些APCVD方法需要更高的温度。此外，当衬底位于热的金属带上时，会出现并非所愿的所谓的翘曲效应，也就是说，要涂层的太阳能电池晶圆片出现翘曲形的弯拱。
EP0503382A1公开了一种带有环绕的输送带的APCVD系统，在该输送带上面沿输送方向彼此间隔开地设置有前处理腔、主反应腔和后处理腔，在它们之间发生着氮气喷淋过程。在输送带的下方，沿着在装载站与卸载站之间的基本上全部的长度设置有多个加热部件，以便把要涂层的衬底加热到约500℃的温度。
DE102009041546A1公开了一种利用选择性发射器制造太阳能电池的方法。为此，作为可能的过程，提出通过APCVD产生掺杂源比如磷硅玻璃(PSG)，然后在管式炉或直通炉中进行第一个轻微的扩散步骤，并利用轮、链条或升降杆进行输送。
DE102008030679A1公开了一种用于对工件进行扩散处理的装置，其带有输送机构，针对该输送机构，出于相对于所用处理介质的耐热性和耐腐蚀性的原因，提出使用由陶瓷材料构成的轮或柱形辊。在反应区域中，在输送带上面设置有气体供应机构，在输送带下面有个例如平面辐射器形式的加热机构与所述气体供应机构相对。
在本申请人的以前的专利申请DE102011077833中记载了一种APCVD方法和一种相应的装置，用于把Al2O3钝化层敷设到衬底特别是太阳能电池硅晶圆上，其中，衬底借助由输送轮构成的输送带水平地在连续运行中被输送。
发明内容
本发明的目的在于，提出一种用于在衬底上制造薄层的装置以及一种相应的用于在连续运行中制造薄层的方法，借此能避免现有技术的问题，特别是能实现针对任意的APCVD方法进行广泛应用。
所述目的通过一种具有权利要求1的特征的装置以及一种具有权利要求13的特征的方法得以实现。其它权利要求所述为本发明的有利设计，下面对其予以详述。在此，有些前述特征仅结合装置或者结合所述方法来介绍。但与此独立地，这些特征应既能适用于装置，又能适用于方法。权利要求的文字内容具体援引加入本说明书中。
提出，采用APCVD方法在高于250℃的温度情况下敷设层。在此，衬底在连续运行中在水平输送带上被输送，并借助相应的涂层装置被涂层。根据本发明，输送带被实现为轮式带，也就是说，它具有前后相继地布置的输送轮。输送轮由耐热的非金属的材料构成。由此可以消除金属沾染的危险，解决前述麻烦的清洁的问题。输送带材料的耐热性可以在涂层方法中根据预计的应用目的或者根据要采用的温度予以调整。
根据本发明，在输送带的背离APCVD涂层装置的一侧，特别是在输送带的下面设置有加热机构和/或喷淋气体供应机构。加热机构可以负责从一侧对要涂层的衬底进行必需的加热，而在另一侧敷设层或者进行涂层。作为加热机构，适宜采用辐射式加热机构，其比如对于本领域技术人员基本上是已知的。其可以是IR加热器、石英灯等。通过喷淋气体供应机构，可以从背离要涂层的衬底表面的一侧，例如从下面对衬底施加所谓的喷淋气体。由此可以避免APCVD涂层装置的大部分气流到达轮式带，或者到达衬底底面，而在这里不应进行涂层。
由于输送带被实现为轮式带，其带有通常彼此间隔开地布置的轮，所以能非常有效地利用加热机构和/或喷淋气体供应机构对衬底加载。喷淋气体由此可以穿过轮间腔直接到达衬底，加热机构的加热功率也可以穿过轮间腔直接地和/或也可以间接地通过输送轮被引至衬底。
可行的是，用石墨材料或者耐高温的纤维复合材料制造输送轮，所述纤维复合材料带有相应的耐热纤维比如碳纤维、石墨纤维、玄武岩纤维或聚酰胺纤维。由此也可以达到250℃以上的温度。输送轮有利地由陶瓷材料构成，或者具有至少一个由陶瓷材料构成的外表面或涂层。特别有利地，至少输送轮的轮体完全由陶瓷制成。尤其可行的是，输送带的其它部分例如轴承或轴也由陶瓷材料制成，输送轮在所述轴上转动。在此，这种轴可以连续地穿过带有相应通孔的输送轮，但也可以作为轴端头从输送轮伸出并支撑在输送带的轮轴承上。在任何情况下都重要的是，输送轮的与衬底接触或者非常靠近衬底的区域由耐热的非金属的材料构成，用于避免前述沾染风险。
有很多种材料适宜作为陶瓷材料。特别有利地采用氧化铝，因为由此提供了很好的经验，它通常也可以大规模地在工业上应用，以及能良好地加工。它也很少有断裂风险，且在机械上稳固。也可以给陶瓷材料混合纤维，特别是陶瓷纤维比如玄武岩纤维。
根据本发明的进一步设计，有利地沿着输送带设置至少两个这种APCVD涂层装置。由此例如可以两次地或者频繁地沉积薄层，进而得到整体上较大的层厚，或者加速了所述方法。有利地，然后把两个涂层装置彼此分开一段距离，例如分开其实际连续长度的两倍至五倍。有利地可以在涂层装置之间设置其它加热机构，由此也可以使得衬底在它们之间保持温度。
根据本发明的改进，可以沿行进方向在第一涂层装置之前对衬底进行预热。这种预热有利地也利用加热机构或辐射式加热机构进行。为此可以特别有利地设置一种预热腔。被视为低廉的是，在输送带或衬底上方设置用于预热的加热机构，如果例如接下来在该顶面上对衬底进行涂层。此外，由此可以简化设备结构，特别是也可以在输送带或者带有输送轮的轮式带的结构和可达性方面进行简化。
类似于前述预热腔，也可以规定在涂层装置后面进行衬底加热。由此一方面可以事后处理涂层，另一方面可以针对后续的涂层步骤或处理步骤使得衬底保持温度。
前述被加热的在两个涂层装置之间的区域可以有利地在一定程度上按照用于第二涂层装置预热腔的形式对外封闭，该预热腔与在第一涂层装置之前的预热腔构造类似。这里也可以视为有利的是，加热机构设置在面向要涂层的衬底表面的一侧，例如设置在输送带或者要涂层的衬底的上方，而在涂层装置本身的区域中将加热机构设置在相对的另一侧，例如设置在输送带下方。
本发明的输送轮带有由非金属的耐高温的材料构成的表面或实心材料，通过所述输送轮可以将涂层装置设计用于明显高于600℃的沉积温度。尤其是利用用于输送带或输送轮的前述陶瓷材料也可以达到高于800℃或者甚至高于1000℃的温度。
作为用电工作的加热机构的前述辐射式加热器的替代，也可以规定用热气流或等离子进行加热。为此可以规定空气、氮气或另一种合适的气体混合物。有利地规定在APCVD涂层装置之外利用热气流进行这种加热，以便不影响在其中进行的涂层过程，即使所用气体不直接与涂层过程相互作用。
在本发明的进一步设计中规定，在APCVD涂层装置上设置废气系统。由此可以使得涂层过程不受干扰地进行，且能更好地控制气体供应流。
对于喷淋气体供应来说已表明有利的是，设置多个喷嘴，例如狭缝式地或者阵列式地伸展的喷嘴，所述喷嘴在涂层装置的区域中例如从下面基本上对衬底的整个面施加喷淋气体。喷嘴可以穿过加热机构，从而喷淋气体在其到达衬底之前就受到加热。
根据本发明的改进，喷淋气体供应机构被设计用于使得喷淋气体作为用于加热或冷却的调温介质对准衬底。在某些应用情况下，特别是在衬底的要涂层的侧面遭受相对高的涂层温度情况下，采用喷淋气体作为冷却介质可以预防并非所愿的加热效应比如衬底拱曲。给相对的衬底侧面施加具有比涂层温度低的温度的喷淋气体，由此可以在涂层过程期间使得衬底的相对的侧面以所希望的程度冷却。
根据本发明的另一有利的设计，输送带可相对于余下的装置竖直地移动，或者，这二者可以相互离开地移动。特别有利的是，为此若所述装置在其它情况下静止就使得输送带向下下降。这意味着成本尽可能小，且要移动的质量也相对小。在下降的输送带上可以利用明显改善的可达性进行清洁和维护工作。在涂层装置区域中按前述将加热和/或喷淋气体供应机构设置于输送带下面的情况下，可以规定将其固定在输送带上，从而其能一起移动或下降。但这并不是问题。同样有利的是，为了预热或者以其它方式加热衬底，将加热机构设置在输送带上方，因为这样一来加热机构就不会干扰下降。
采用本发明的方法可以制造介电的层作为薄层并将其敷设到衬底上。这种层有利地选自如下组：SiO2、Al2O3、SiNx、AlN。由此特别有利地给太阳能电池涂层。
替代地，可以采用本发明的方法例如为了接触目的把导电的层作为薄层敷设到太阳能电池上。该层有利地是由TCO构成的层。这对于太阳能电池特别有利。
进一步替代地，可以采用本发明的方法将掺杂层敷设到作为衬底的太阳能电池上。这可以是P掺杂、B掺杂或Ge掺杂。
进一步替代地，可以采用本发明的方法在作为衬底的太阳能电池上敷设抗反射层作为薄层。所述抗反射层可以选自如下组：SiNx、MgO、MnO、TiO2、ZrO2、MoSi2。
如所述，本发明的方法以及相关装置特别良好地适用于对薄的衬底进行涂层，因为这种衬底通常可以轮式带上很好地轻柔地被输送。这也能在陶瓷轮情况下实现。通过在线涂层，可以很好地在较短的时间内以足够的层厚施加涂层和轻柔地运送要涂层的衬底。
这些特征和其它特征除了可由权利要求书得到外，还可由说明书和附图得到，其中，各个特征分别可以单独地或者多个地以子组合的形式在本发明的实施方式中实现，并可以在其它领域实现，且能形成有利的以及本身能受保护的设计，这里对此要求权利保护。本申请分成各个段落以及中间的小标题并不使得在这些小标题下面所做的论述的通用性受到局限。
附图说明
附图中示意性地示出了本发明的实施例，下面对其予以详述。在这些附图中：
图1示出了本发明的用于涂层的装置，其带有唯一的APCVD涂层装置和输送带，输送带具有输送轮；
图2示出类似于图1的变型的装置，其带有两个APCVD涂层装置；
图3为带有供气机构的APCVD涂层装置的放大的侧剖视图和输送带的放大图；和
图4为在输送带下降情况下图1的装置的视图。
具体实施方式
在图1中示出了本发明的装置11，利用该装置能把薄层沉积到衬底上。装置11尤其可以应用于太阳能电池制造。它具有喷射器13作为涂层装置，该喷射器例如由DE102011077833已知。
在喷射器13的左前方设置有带相应加热机构21的预热腔20，而在喷射器13的后面设置有带加热机构24的后续加热器23。在喷射器13以及预热腔20和后续加热器23的下面，有个输送带27在装置11的下部区域中伸展。该输送带具有各个输送轮28，利用这些输送轮可以采用开篇所述的方式轻柔地输送特别是用于太阳能电池制造的衬底30。衬底30在此仅仅位于输送轮28上，并通过输送轮的转动而被输送。很显然，这是一种尽可能轻柔的过程，从而即使很薄的或者很敏感的衬底30也能被输送和涂层。输送轮28被有利地驱动，但这对于本领域技术人员来说易于实现，因而这里不予详述。在此，输送轮28在轮轴29上转动，这也易于理解，故这里无需予以详述。轮28和轮轴29由前述陶瓷材料构成，确切地说，由实心材料特别是氧化铝构成。替代地，也可考虑采用陶瓷涂层的轮28。
此外，在喷射器13上设置有废气系统15，该废气系统还设置在后续加热器23上。这将在下面再次予以详述。
在喷射器13下方设置有加热机构14。加热机构21和24向下作用或辐射，以便给在其下面被输送经过的衬底30加热，而喷射器13的加热机构14设置在衬底30或输送带27下方，且向上作用。这不会干扰涂层过程，且能实现在经过衬底顶面的涂层过程期间从下面对衬底加热。
在相应于图2的装置111的变型中示出，设置有两个喷射器113a和113b，它们在其下面且在输送带127下方分别带有加热机构114a和114b。也设置有带相应加热机构121的预热腔120和带有加热机构124的后续加热器123。在两个喷射器113a和113b之间，为了使得要涂层的衬底130在输送带127上保持一温度，设置有带相应加热机构126的中间加热器125。中间加热器125在此可以如同预热腔120或后续加热器123那样来设计。这也适用于其加热机构126，该加热机构也设置在输送带127上方，并在衬底下面对衬底130加热。
在两个喷射器113a和113b上设置有废气系统115。该废气系统也向下延伸至输送带127，但此点还将在下面予以详述。对于该装置111来说，输送带127也具有输送轮128。这些输送轮有利地与图1相同地设计。
根据图3的作为APCVD涂层装置的喷射器13的放大图再次放大地示出带有轮轴29的输送轮28，这些输送轮形成输送带27。衬底30的衬底顶面31向上位于输送带27或输送轮28上。在此，轮轴29可以采用未示出的方式支撑在装置11的框架等上的旁侧的轮轴承中，如此点本已公知。此外，这些轮轴29可以穿过输送轮28伸展，并在两端突伸出来。所述轮轴也可以有利地按照短轴的方式来使用，或者完全固定在轮轴承中，从而输送带28仅松动地套到所述轮轴上，且能在所述轮轴上连同传动机构一起转动。
喷射器13具有气体入口16，用于APCVD涂层的过程气体被导入所述气体入口中。这对于本领域技术人员来说本已公知，特别是也参见前述DE102011077833。气体入口16延伸至在喷射器13底面上的气体出口17，或者在衬底顶面31的上方很近处。在那里，过程气体于是朝向旁侧流至相对靠近气体出口17的不同的气体吸除器18a和向外距离稍远处的气体吸除器18b。气体吸除器18a和18b在此与前述废气系统15连接。
在喷射器13的左边和右边也示出了带有加热机构21的预热腔20或者带有加热机构24的后续加热器23。在此，加热机构21和24在涂层之前不久和之后不久对衬底顶面31加热。
在输送带27下方，在喷射器13下面设置有带各个喷嘴35的喷淋气体供应机构34。利用这些喷嘴把喷淋气体导入装置11中，或者所述喷淋气体在喷射器13下方的区域中使得衬底30下方的区域在一定程度上保持没有来自APCVD涂层装置的气体出口17的气体。由此可以避免在衬底30的底面上出现污染或沉积。
喷射器13的前述加热机构14也设置在喷淋气体供应机构34或喷嘴35的区域中。喷嘴35被加热机构14穿过。在此，这些喷嘴35要么是多个独立的喷嘴，要么是细长的喷嘴，特别是狭缝式喷嘴或环形喷嘴。
在从喷嘴35出来之后，喷淋气体可以穿过在输送轮28之间的中间腔直接到达衬底的底面，以及穿过在相继的衬底30之间的空隙进入到在输送带27上面的区域中。除了实际喷淋的目的外，喷淋气体还可以在需要时针对衬底30执行调温功能，即加热或冷却功能。为此，使得具有相应的所希望的温度的喷淋气体对准衬底30。为了该调温目的，可以在需要时利用加热机构14特别是在穿过喷嘴35情况下对喷淋气体加热。替代地，可以在无预热情况下或者在事先主动冷却之后使得喷淋气体对准衬底30，以便在底侧冷却所述衬底，优选在顶侧进行涂层过程期间、之前不久和/或之后不久进行所述冷却。为了主动地冷却喷淋气体，可以采用对此本已公知的任何气体冷却装置，因此这里无需对此予以详述。替代于或附加于在底侧对衬底施加加热的喷淋气体，也可以直接通过加热机构14在底侧对衬底30加热，例如透过轮中间腔和/或通过输送轮28本身进行辐射式加热。
加热机构14和喷淋气体供应机构34的沿输送方向的延展距离主要局限在相对地设置在输送带28上面的喷射器13的相应的延展距离。已表明，这足以实现令人满意的衬底加热，其中，任选地添加设置在顶侧的加热机构21、24。相比于传统的带有环绕的输送带的设备，当前通过轮式带得到了明显提高加热效率的优点。在循环时又冷却的带不必加热，输送轮28保持原位。此外，可以把设置在涂层区域中的输送轮28用作连续的热传递部件，和/或通过它们的间隔开的布置方式易于从下面直接加热衬底。
涂层的工作方式也参见前述DE102011077833。
最后，图4再次示出图1的装置11。为了特别是针对输送带27的维护目的，使得输送带下行或者下降，亦即使得输送带28连同未示出的轴承和固定于其上的否则位于喷射器13下面的加热机构14一起也下行或者下降。可明显地看出，现在能够很好地维护或维修或清洁输送带27或输送轮28。可以采用电动方式、液压方式或者纯机械方式使得输送带27下降。如由图4可清楚地看到，加热机构14可毫无问题地下降。然后在做完维护工作之后，该加热机构又与输送带27一起提升。

Claims (22)

1.一种用于在衬底上制造薄层的装置，带有：
-APCVD涂层装置（13），用于采用APCVD方法在高于250℃的温度情况下敷设薄层；
-带有输送轮（28）的水平的输送带（27），用于在连续运行中输送衬底，所述输送轮由耐热的非金属的材料构成；和
-设置在输送带的背离APCVD涂层装置的一侧的加热机构（14）和/或喷淋气体供应机构（34）。
2.如权利要求1所述的装置，其特征在于，输送带由陶瓷材料构成，或者用这种材料被涂层。
3.如权利要求1或2所述的装置，其特征在于，APCVD涂层装置设置在输送带上方，加热机构和/或喷淋气体供应机构在APCVD涂层装置的区域中设置在输送带下方。
4.如权利要求1所述的装置，其特征在于，沿行进方向在APCVD涂层装置之前设置有用于衬底的预热机构（20、21），和/或在APCVD涂层装置之后设置有用于衬底的后续加热机构（23、24）。
5.如权利要求1所述的装置，其特征在于，沿着输送带以预定的距离彼此间隔开地设置有至少两个APCVD涂层装置（113a、113b）。
6.如权利要求5所述的装置，其特征在于，在每两个APCVD涂层装置之间设置有输送带的被加热的区域，该区域设有布置在输送带上方的加热机构（125、126）。
7.如权利要求1所述的装置，其特征在于，APCVD涂层装置被设计用于高于600℃的沉积温度。
8.如权利要求1所述的装置，其特征在于，作为加热机构，设置带有热气流的加热器。
9.如权利要求1所述的装置，其特征在于，在相应的APCVD涂层装置上设置有废气系统（15）。
10.如权利要求1所述的装置，其特征在于，喷淋气体供应机构被设计用于从下面对衬底施加喷淋气体。
11.如权利要求1所述的装置，其特征在于，喷淋气体供应机构被设计用于使得喷淋气体作为用于加热或冷却衬底的调温介质对准衬底。
12.如权利要求1所述的装置，其特征在于，输送带可相对于余下的装置向下下降。
13.如权利要求1所述的装置，其特征在于，所述装置用于制造太阳能电池。
14.如权利要求2所述的装置，其特征在于，所述陶瓷材料是氧化铝。
15.如权利要求4所述的装置，其特征在于，所述预热机构（20、21）和/或所述后续加热机构（23、24）设置在输送带的与APCVD涂层装置相同的一侧。
16.如权利要求7所述的装置，其特征在于，所述沉积温度高于800℃。
17.如权利要求7所述的装置，其特征在于，所述沉积温度高于1000℃。
18.如权利要求8所述的装置，其特征在于，所述加热器设置在APCVD涂层装置之外，所述热气流是空气、N2或气体混合物。
19.如权利要求10所述的装置，其特征在于，喷淋气体供应机构具有用于从下面对衬底施加喷淋气体的喷嘴。
20.一种用于利用根据前述权利要求中任一项的装置在连续运行中制造薄层的方法，其特征在于，作为薄层，
-制造介电的层，或者把该介电的层敷设到衬底上，或者
-在太阳能电池上敷设导电的层，或者
-将掺杂层敷设到作为衬底的太阳能电池上，或者
-在作为衬底的太阳能电池上敷设抗反射层。
21.如权利要求20所述的方法，其特征在于，在APCVD涂层装置的区域中从下面对衬底施加喷淋气体。
22.如权利要求20所述的方法，其特征在于，该介电的层选自如下组：SiO2、Al2O3、SiNx、AlN，或者，所述导电的层用作为TCO，或者，所述掺杂层是P掺杂物、B掺杂物或Ge掺杂物，或者，所述抗反射层选自由SiNx、MgO、MnO、TiO2、ZrO2、MoSi2构成的组。
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DE102011080202A1 (de) 2013-02-07
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US10030307B2 (en) 2018-07-24
TWI559434B (zh) 2016-11-21
EP2739766A1 (de) 2014-06-11
US20150024540A1 (en) 2015-01-22
TW201314829A (zh) 2013-04-01
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