WO2019114233A1 - 一种红外加热灯管装置 - Google Patents

一种红外加热灯管装置 Download PDF

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Publication number
WO2019114233A1
WO2019114233A1 PCT/CN2018/092240 CN2018092240W WO2019114233A1 WO 2019114233 A1 WO2019114233 A1 WO 2019114233A1 CN 2018092240 W CN2018092240 W CN 2018092240W WO 2019114233 A1 WO2019114233 A1 WO 2019114233A1
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WO
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Prior art keywords
infrared heating
lamp tube
heating lamp
center
lamps
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PCT/CN2018/092240
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English (en)
French (fr)
Inventor
董志清
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北京创昱科技有限公司
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Publication of WO2019114233A1 publication Critical patent/WO2019114233A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • H05B3/42—Heating elements having the shape of rods or tubes non-flexible
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/032—Heaters specially adapted for heating by radiation heating

Definitions

  • the invention relates to the technical field of infrared heating lamps, and in particular to an infrared heating lamp tube device.
  • Optoelectronic devices, solar devices, semiconductor devices are typically fabricated using a variety of fabrication processes to treat substrate surfaces.
  • a method in which an epitaxial film or material is grown or deposited on a substrate by a chemical vapor deposition CVD process or a metal organic CVD process, and an epitaxial film or material generally includes a plurality of specific devices such as photovoltaic devices, solar devices, and the like. Layers of different components.
  • CVD techniques are often classified by reaction type or pressure, including low pressure CVD, atmospheric pressure CVD, plasma enhanced CVD, and metal organic compound CVD.
  • a common feature is that the chamber for process deposition is isolated from the atmosphere, and the wafer substrate used to deposit the thin film process needs to be heated to a certain process temperature. Therefore, how to maintain temperature uniformity at high temperatures will have a huge impact on the process results.
  • the wafer susceptor lower surface for supporting the wafer substrate is exposed to radiation from the heat lamp assembly by moving the wafer carrier along the wafer carrier track into the process deposition chamber At the same time, the wafer substrate is heated by the wafer susceptor to the process temperature.
  • the infrared heating lamp assembly is disposed below the wafer carrier track and includes a plurality of infrared heating lamps of the same mounting height. Each of the lamps can be independently connected to and controlled by the power source, that is, the amount of electricity flowing to each of the lamps can be independently adjusted by the controller.
  • the existing infrared heating lamps generally adopt a parallel arrangement, so that the heating area of the lamp covers the entire wafer area or even the carrier area.
  • the parallel arrangement of the infrared heating lamps allows the energy of each tube to be independently adjusted to control the energy of the tube radiation, but only adjusts the temperature distribution of the tubes in parallel, and the tube row.
  • the temperature distribution in the vertical direction of the cloth cannot be adjusted, that is, the power cannot be adjusted in the longitudinal direction of each tube, and the temperature distribution in this direction cannot be adjusted. This defect has caused the temperature distribution in the existing control technology to still not meet the higher uniformity requirements.
  • the object of the present invention is to provide an infrared heating lamp tube device, which solves the problem that the existing infrared heating lamp tubes are arranged in parallel and cannot meet the requirements of higher temperature distribution uniformity.
  • the present invention provides an infrared heating lamp tube apparatus, comprising: a mounting bottom plate and a plurality of infrared heating lamps disposed on the mounting substrate, the plurality of infrared heating lamps being installed
  • the center of the bottom plate is radially arranged in a circumferential direction, and an extension line of each of the infrared heating lamps is directed to the center of the mounting base.
  • the infrared heating lamp tube is divided into at least two groups, and one end of each group of the infrared heating lamp tubes pointing to the center of the mounting substrate forms a circular shape, and the circular shapes are sequentially arranged from the inside and the outside.
  • each of the sets of the infrared heating lamps is formed in a circular or rectangular shape away from an end of the center of the mounting base.
  • each of the infrared heating lamps is evenly arranged in the circumferential direction on the mounting bottom plate.
  • the infrared heating tube has an L-shaped structure.
  • one end of the infrared heating lamp tube pointing to the center of the mounting base plate is provided with a bracket for supporting the infrared heating lamp tube, and the bracket is mounted on the mounting bottom plate.
  • a mounting through hole through which the infrared heating lamp tube passes is disposed on the mounting bottom plate, and an end of the infrared heating lamp tube away from a center of the mounting bottom plate passes through the mounting through hole.
  • the infrared heating lamp tube is sealingly connected to the mounting through hole.
  • a power conditioner connected to the infrared heating lamp and for controlling each of the infrared heating lamps or each of the infrared heating lamps is further included.
  • each of the infrared heating lamps has a uniform height on the mounting base.
  • the infrared heating lamp tube device of the invention has a plurality of infrared heating lamps arranged radially in a circumferential direction with the center of the mounting bottom plate as a center, and the arrangement structure of the infrared heating lamps can achieve better temperature uniformity. Control to meet higher process uniformity requirements.
  • FIG. 1 is a schematic structural view of an infrared heating lamp tube device according to an embodiment of the present invention
  • FIG. 2 is a top plan view of an infrared heating lamp tube apparatus according to an embodiment of the present invention.
  • FIG. 3 is a schematic view showing the structure of an infrared heating lamp tube of an infrared heating lamp tube device according to an embodiment of the present invention.
  • an embodiment of the present invention provides an infrared heating lamp tube device, including a mounting base plate 1 and a plurality of infrared heating lamps 2 disposed on the mounting substrate 1, the plurality of infrared heating The lamps 2 are radially arranged in the circumferential direction centering on the center of the mounting base 1, and the extension lines of each of the infrared heating lamps 2 are directed to the center of the mounting base 1.
  • the infrared heating lamps 2 are evenly arranged on the mounting base 1 in the circumferential direction, that is, the angle between any two adjacent infrared heating lamps 2 is equal.
  • the infrared heating lamp device of the embodiment of the invention is installed inside the process deposition chamber, and the wafer carrier for carrying the wafer substrate is parallel to the infrared heating lamp device and horizontally transferred to the process position, at this time, the wafer The carrier is located just above the infrared heating lamp unit.
  • the wafer susceptor heats the wafer substrate to the process temperature by accepting the radiant energy of the infrared heating lamp.
  • the plurality of infrared heating lamps 2 are radially arranged in the circumferential direction with the center of the mounting base plate 1 as a center, thereby improving the uniformity of temperature distribution in the chamber.
  • the infrared heating lamp tube 2 is divided into at least two groups, wherein one end of each group of the infrared heating lamp tubes 2 directed to the center of the mounting base plate 1 is formed in a circular shape, and the circular shapes are arranged in order from the inside and the outside.
  • Each of the infrared heating lamps 2 of the group is formed in a circular or rectangular shape away from an end of the center of the mounting base 1.
  • the infrared heating lamps are divided into five groups, which are a first group of infrared heating lamps 201, a second group of infrared heating lamps 202, a third group of infrared heating lamps 203, and a fourth group of infrared rays.
  • the heating lamp tube 204 and the fifth group of infrared heating lamps 205 can be arranged between the infrared heating lamps of each group, and the number of the infrared heating lamps in each group can be adjusted according to actual needs.
  • the first set of infrared heating lamps 201 are directed to the center of the mounting base plate 1 to form a first circle
  • the second group of infrared heating lamps 202 are directed to the center of the mounting base plate 1 to form a second circle.
  • a third circle is formed at one end of the third group of infrared heating lamps 203 pointing to the center of the mounting base plate 1
  • a fourth circle is formed at an end of the fourth group of infrared heating lamps 204 pointing to the center of the mounting base plate 1.
  • the fifth group of infrared heating lamps 205 are directed to one end of the center of the mounting base plate 1 to form a fifth circle, the first circular shape, the second circular shape, the third circular shape, the fourth circular shape, and The fifth circle is arranged in order from the inside to the outside.
  • the first group of infrared heating lamps 201 and the second group of infrared heating lamps 202 are used to provide the heating temperature of the central region of the mounting base plate 1, through the third group of infrared heating lamps 203 and the fourth group of four infrared heating lamps.
  • 204 is for providing a heating temperature of the intermediate portion of the mounting base plate 1 through the fifth group of infrared heating lamps 205 for providing a heating temperature of the peripheral region of the mounting base plate 1, thereby constituting the entire mounting base plate 1 Heating zone.
  • the apparatus also includes a power conditioner coupled to the infrared heating tube for controlling each of the infrared heating tubes or each set of the infrared heating tubes.
  • the temperature gradients to the central, intermediate and peripheral regions of the heating zone can be achieved by independent power regulation control of the infrared heating lamps in different zones. Therefore, the circumferential temperature distribution uniformity control of the entire heating zone can be achieved by the power conditioner adjusting the power of each infrared heating lamp or the power adjustment of each group of infrared heating lamps.
  • each of the infrared heating lamps 2 on the mounting base plate 1 is uniform, and the infrared heating lamp tube 2 is disposed at a height parallel to the wafer carrier rail.
  • Each of the infrared heating lamps 2 can be independently or regionally connected to a power source, and the power of each of the infrared heating lamps 2 or an infrared heating tube in a certain area can be independently adjusted by the power controller. In order to achieve the purpose of independently adjusting the temperature distribution of each of the infrared heating lamps 2 or regions.
  • the length and power setting of the different sets of mid-infrared heating lamps can vary depending on the shape of the wafer carrier.
  • the mounting base plate 1 may have a rectangular or circular structure.
  • one end of each of the infrared heating lamps 2 away from the center of the mounting base plate 1 has a rectangular shape or a circular shape adapted to the shape of the mounting base plate 1.
  • the mounting base plate 1 adopts a rectangular structure, and correspondingly, the ends of the infrared heating lamps 2 away from the center of the mounting base plate 1 are formed.
  • a rectangle adapted to the shape of the mounting base plate 1 causes the length dimension of each of the infrared heating lamps 2 to be adjusted as needed.
  • the infrared heating lamp tube 2 has an L-shaped structure, and the heating filament of the infrared heating lamp tube 2 is single-ended.
  • the end of the infrared heating lamp tube 2 away from the center of the mounting base plate 1 is a filament lead-out end, and the filament lead-out end of the infrared heating lamp tube 2 is a cold end, and the end needs to pass through the mounting base plate 1 at
  • the mounting base plate 1 is provided with a mounting through hole through which the infrared heating lamp tube 2 passes.
  • the infrared heating lamp tube 2 is sealingly connected with the mounting through hole, and when the entire infrared heating lamp tube device is mounted on the process chamber, the atmosphere is insulated by a sealed connection.
  • the mounting through hole and the infrared heating lamp tube 2 are sealed and installed by using an O-ring.
  • the end of the infrared heating lamp tube 2 pointing to the center of the mounting base plate 1 is provided with a bracket for supporting the infrared heating lamp tube 2, and the bracket is mounted and fixed on the mounting base plate 1, and the bracket can be made of metal. Made of materials, it can also be made of temperature-resistant non-metallic materials such as ceramics.
  • a plurality of infrared heating lamps are radially arranged in a circumferential direction with the center of the mounting bottom plate as a center, and the arrangement structure of the infrared heating lamps can be Achieve better temperature uniformity control to meet higher process uniformity requirements.

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  • Engineering & Computer Science (AREA)
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Abstract

一种红外加热灯管装置，包括安装底板（1）以及设置在安装底板（1）上的多个红外加热灯管（2），多个红外加热灯管（2）以安装底板（1）的中心为圆心按照圆周方向呈放射状排列，且每个红外加热灯管（2）的延长线均指向所述安装底板（1）的中心。通过将红外加热灯管（2）以安装底板（1）的中心为圆心按照圆周方向呈放射状排列，可以实现更好的温度均匀性控制，满足更高的工艺均匀性要求。

Description

一种红外加热灯管装置
交叉引用
本申请引用于2017年12月13日提交的专利名称为“一种红外加热灯管装置”的第2017113267194号中国专利申请，其通过引用被全部并入本申请。
技术领域
本发明涉及红外加热灯管技术领域，尤其涉及一种红外加热灯管装置。
背景技术
光电器件、太阳能器件、半导体器件通常利用多种制造工艺处理衬底表面而被制造。外延膜或材料通过化学气相沉积CVD工艺或金属有机物CVD工艺被生长或沉积在衬底上的方法被广泛应用，外延膜或材料通常对于特定的器件，例如光电器件、太阳能器件等都会包括多个不同组分的层。
CVD技术常常通过反应类型或者压力来分类，包括低压CVD、常压CVD、等离子体增强CVD、及金属有机化合物CVD等。其共同特征是用于工艺沉积的腔室与大气隔绝，内部用于沉积薄膜工艺的晶片衬底需要加热到一定的工艺温度。因此高温下如何保持温度均匀性，对工艺的结果会产生巨大的影响。
对于平板式反应腔室而言，通过使晶片承载器沿着晶片承载器轨道将晶片衬底移送至工艺沉积腔室内，用于支撑晶片衬底的晶片衬托器下表面暴露于从加热灯组件辐射的能量下，同时晶片衬底被晶片衬托器加热至工艺温度。红外加热灯组件布置在晶片承载器轨道的下方，其中包括多个安装高度一样的红外加热灯管。每个灯管可以独立地与电源接通和控制，即通过控制器可以独立地调整流动至每个灯管的电量。
然而现有的红外加热灯管普遍采用平行排布方式，使灯管的加热区域覆盖整个晶片区域甚至载板区域。这种红外加热灯管的平行排布方式，虽说可以独立调节每个灯管的电量用以控制灯管辐射的能量，但是只能调节灯管平行排布方向的温度分布，而与灯管排布垂直方向的温度分布则无法 调节，也即每只灯管的长度方向无法调节功率，也就不能调节该方向上的温度分布。这个缺陷造成在现有控制技术上温度分布仍然不能满足更高的均匀性要求。
发明内容
(一)要解决的技术问题
本发明的目的是提供一种红外加热灯管装置，解决现有红外加热灯管的平行排布方式，不能满足更高的温度分布均匀性要求的问题。
(二)技术方案
为了解决上述技术问题，本发明提供了一种红外加热灯管装置，包括安装底板以及设置在所述安装底板上的多个红外加热灯管，所述的多个红外加热灯管以所述安装底板的中心为圆心按照圆周方向呈放射状排列，且每个所述红外加热灯管的延长线均指向所述安装底板的中心。
进一步地，所述的红外加热灯管分成至少两组，各组所述红外加热灯管指向所述安装底板中心的一端分别形成圆形，且各圆形从内外依次布置。
具体地，各组所述红外加热灯管远离所述安装底板中心的一端形成圆形或矩形。
具体地，各所述红外加热灯管在所述安装底板上沿周向均匀排布。
进一步地，所述红外加热灯管为L形结构。
具体地，所述红外加热灯管指向所述安装底板中心的一端设有用于支撑所述红外加热灯管的支架，所述支架安装在所述安装底板上。
具体地，在所述安装底板上设有供所述红外加热灯管穿过的安装通孔，所述红外加热灯管远离所述安装底板中心的一端穿过所述安装通孔。
进一步地，所述红外加热灯管与所述安装通孔密封连接。
具体地，还包括与所述红外加热灯管相连且用于控制每个所述红外加热灯管或每组所述红外加热灯管的功率调节器。
具体地，各所述红外加热灯管在所述安装底板上的设置高度一致。
(三)有益效果
本发明的上述技术方案具有如下优点：
本发明所述的红外加热灯管装置，将多个红外加热灯管以安装底板的 中心为圆心按照圆周方向呈放射状排列，这种红外加热灯管的排布结构可以实现更好的温度均匀性控制，满足更高的工艺均匀性要求。
附图说明
图1是本发明实施例红外加热灯管装置的结构示意图；
图2是本发明实施例红外加热灯管装置的俯视图；
图3是本发明实施例红外加热灯管装置的红外加热灯管结构示意图。
图中：1：安装底板；2：红外加热灯管；201：第一组红外加热灯管；202：第二组红外加热灯管；203：第三组红外加热灯管；204：第四组红外加热灯管；205：第五组红外加热灯管。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1-3所示，本发明实施例提供一种红外加热灯管装置，包括安装底板1以及设置在所述安装底板1上的多个红外加热灯管2，所述的多个红外加热灯管2以所述安装底板1的中心为圆心按照圆周方向呈放射状排列，且每个所述红外加热灯管2的延长线均指向所述安装底板1的中心。
其中，各所述红外加热灯管2在所述安装底板1上沿周向均匀排布，也即任意相邻的两个所述红外加热灯管2之间的夹角相等。
本发明实施例所述的红外加热灯管装置被安装在工艺沉积腔室内部，用于承载晶片衬底的晶片承载器平行于红外加热灯管装置并且水平地被传送到工艺位置，此时晶片承载器刚好位于红外加热灯管装置的正上方。通过接受红外加热灯管的辐射能量，晶片衬托器将晶片衬底加热到工艺温度。本实施所述的红外加热灯管装置，通过将多个红外加热灯管2以安装底板1的中心为圆心按照圆周方向呈放射状排列，从而提高腔室内的温度分布均匀性。
进一步来说，所述的红外加热灯管2分成至少两组，其中各组所述红 外加热灯管2指向所述安装底板1中心的一端分别形成圆形，且各圆形从内外依次布置。各组所述红外加热灯管2远离所述安装底板1中心的一端形成圆形或矩形。
在本实施例中，所述的红外加热灯管分成五组，分别为第一组红外加热灯管201、第二组红外加热灯管202、第三组红外加热灯管203、第四组红外加热灯管204和第五组红外加热灯管205，各组红外加热灯管之间可以交叉布置，并且每组中红外加热灯管的设置数量可以根据实际需求进行调整。
其中，所述第一组红外加热灯管201指向所述安装底板1中心的一端形成第一圆形，所述第二组红外加热灯管202指向所述安装底板1中心的一端形成第二圆形，所述第三组红外加热灯管203指向所述安装底板1中心的一端形成第三圆形，所述第四组红外加热灯管204指向所述安装底板1中心的一端形成第四圆形，所述第五组红外加热灯管205指向所述安装底板1中心的一端形成第五圆形，所述的第一圆形、第二圆形、第三圆形、第四圆形和第五圆形从内到外依次布置。其中通过第一组红外加热灯管201和第二组红外加热灯管202用于提供所述安装底板1中心区域的加热温度，通过第三组红外加热灯管203和第组四红外加热灯管204用于提供所述安装底板1的中间区域的加热温度，通过第五组红外加热灯管205用于提供所述安装底板1的外围区域的加热温度，由此构成所述安装底板1的整个加热区。
所述装置还包括与所述红外加热灯管相连的功率调节器，用于控制每个所述红外加热灯管或每组所述红外加热灯管。对加热区的中心区域、中间区域以及外围区域的温度梯度可以通过对不同区域的红外加热灯管的独立功率调节控制加以实现。因此，通过所述功率调节器对每个红外加热灯管的功率调节或对每组红外加热灯管的功率调节，就可以实现对整个加热区域进行周向的温度分布均匀性控制。
各所述红外加热灯管2在所述安装底板1上的设置高度一致，且所述红外加热灯管2的设置高度与晶片承载器轨道平行。每个所述红外加热灯管2可以独立的或区域性的与电源接通，通过调功器独立的调整流动至每个所述红外加热灯管2或某个区域中红外加热灯管的电量，以达到独立调 节每个所述红外加热灯管2或区域的温度分布的目的。
不同组中红外加热灯管的长度以及功率设置受晶片承载器形状的限制可以不同。所述安装底板1可以采用矩形或圆形结构，对应地，各所述红外加热灯管2远离所述安装底板1中心的一端形成与所述安装底板1形状相适配的矩形或圆形。
由于目前使用的晶片承载器形状多为矩形，因此，在本实施例中，所述安装底板1采用矩形结构，相应地，各所述红外加热灯管2远离所述安装底板1中心的一端形成与所述安装底板1形状相适配的矩形，由此造成各个所述红外加热灯管2的长度尺寸根据需求调整变化。
在本实施例中，所述红外加热灯管2为L形结构，所述红外加热灯管2的加热灯丝为单端引出。
其中，所述红外加热灯管2远离所述安装底板1中心的一端为灯丝引出端，所述红外加热灯管2的灯丝引出端为冷端，该端需要穿过所述安装底板1，在所述安装底板1上设有供所述红外加热灯管2穿过的安装通孔。
其中，所述红外加热灯管2与所述安装通孔密封连接，当整个红外加热灯管装置安装到工艺腔室上时，通过密封连接方式来隔绝大气。在本实施例中，所述安装通孔与所述红外加热灯管2之间采用O型密封圈进行密封安装。
其中，所述红外加热灯管2指向所述安装底板1中心的一端设有用于支撑所述红外加热灯管2的支架，所述支架安装固定在所述安装底板1上，该支架可以采用金属材料制成，也可以采用耐温的非金属材料制成，例如陶瓷。
综上所述，本发明实施例所述的红外加热灯管装置，将多个红外加热灯管以安装底板的中心为圆心按照圆周方向呈放射状排列，这种红外加热灯管的排布结构可以实现更好的温度均匀性控制，满足更高的工艺均匀性要求。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不 使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (10)

  1. 一种红外加热灯管装置，其特征在于：包括安装底板以及设置在所述安装底板上的多个红外加热灯管，所述的多个红外加热灯管以所述安装底板的中心为圆心按照圆周方向呈放射状排列，且每个所述红外加热灯管的延长线均指向所述安装底板的中心。
  2. 根据权利要求1所述的红外加热灯管装置，其特征在于：所述的红外加热灯管分成至少两组，各组所述红外加热灯管指向所述安装底板中心的一端分别形成圆形，且各圆形从内外依次布置。
  3. 根据权利要求2所述的红外加热灯管装置，其特征在于：各组所述红外加热灯管远离所述安装底板中心的一端形成圆形或矩形。
  4. 根据权利要求1所述的红外加热灯管装置，其特征在于：各所述红外加热灯管在所述安装底板上沿周向均匀排布。
  5. 根据权利要求1所述的红外加热灯管装置，其特征在于：所述红外加热灯管为L形结构。
  6. 根据权利要求5所述的红外加热灯管装置，其特征在于：所述红外加热灯管指向所述安装底板中心的一端设有用于支撑所述红外加热灯管的支架，所述支架安装在所述安装底板上。
  7. 根据权利要求5所述的红外加热灯管装置，其特征在于：在所述安装底板上设有供所述红外加热灯管穿过的安装通孔，所述红外加热灯管远离所述安装底板中心的一端穿过所述安装通孔。
  8. 根据权利要求7所述的红外加热灯管装置，其特征在于：所述红外加热灯管与所述安装通孔密封连接。
  9. 根据权利要求2所述的红外加热灯管装置，其特征在于：还包括与所述红外加热灯管相连且用于控制每个所述红外加热灯管或每组所述红外加热灯管的功率调节器。
  10. 根据权利要求1所述的红外加热灯管装置，其特征在于：各所述红外加热灯管在所述安装底板上的设置高度一致。
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