CN104078418A - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
- Publication number
- CN104078418A CN104078418A CN201310110195.0A CN201310110195A CN104078418A CN 104078418 A CN104078418 A CN 104078418A CN 201310110195 A CN201310110195 A CN 201310110195A CN 104078418 A CN104078418 A CN 104078418A
- Authority
- CN
- China
- Prior art keywords
- opening
- etching
- openings
- interlayer dielectric
- decorative layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010410 layer Substances 0.000 claims abstract description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 26
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000011229 interlayer Substances 0.000 claims abstract description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- 229920000642 polymer Polymers 0.000 claims description 17
- 230000001590 oxidative effect Effects 0.000 claims description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 238000005034 decoration Methods 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- -1 oxygen alkane Chemical class 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 description 2
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310110195.0A CN104078418B (zh) | 2013-03-29 | 2013-03-29 | 半导体器件制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310110195.0A CN104078418B (zh) | 2013-03-29 | 2013-03-29 | 半导体器件制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104078418A true CN104078418A (zh) | 2014-10-01 |
CN104078418B CN104078418B (zh) | 2018-05-25 |
Family
ID=51599603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310110195.0A Active CN104078418B (zh) | 2013-03-29 | 2013-03-29 | 半导体器件制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104078418B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108400109A (zh) * | 2018-02-07 | 2018-08-14 | 上海华虹宏力半导体制造有限公司 | 接触孔的制造方法 |
CN113488431A (zh) * | 2021-05-24 | 2021-10-08 | 北京大学 | 一种包括高深宽比通孔的玻璃基板的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1337740A (zh) * | 2000-08-08 | 2002-02-27 | 世界先进积体电路股份有限公司 | 具有绝缘柱的电容器的制造方法 |
CN1953142A (zh) * | 2005-10-21 | 2007-04-25 | 联华电子股份有限公司 | 制作开口与接触孔的方法 |
CN100461345C (zh) * | 2003-09-26 | 2009-02-11 | 兰姆研究有限公司 | 具有修正的蚀刻 |
CN101459125A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 连接孔的形成方法 |
-
2013
- 2013-03-29 CN CN201310110195.0A patent/CN104078418B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1337740A (zh) * | 2000-08-08 | 2002-02-27 | 世界先进积体电路股份有限公司 | 具有绝缘柱的电容器的制造方法 |
CN100461345C (zh) * | 2003-09-26 | 2009-02-11 | 兰姆研究有限公司 | 具有修正的蚀刻 |
CN1953142A (zh) * | 2005-10-21 | 2007-04-25 | 联华电子股份有限公司 | 制作开口与接触孔的方法 |
CN101459125A (zh) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | 连接孔的形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108400109A (zh) * | 2018-02-07 | 2018-08-14 | 上海华虹宏力半导体制造有限公司 | 接触孔的制造方法 |
CN113488431A (zh) * | 2021-05-24 | 2021-10-08 | 北京大学 | 一种包括高深宽比通孔的玻璃基板的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104078418B (zh) | 2018-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6248667B1 (en) | Chemical mechanical polishing method using double polishing stop layer | |
CN105047660B (zh) | 浅沟槽隔离结构 | |
US8669180B1 (en) | Semiconductor device with self aligned end-to-end conductive line structure and method of forming the same | |
CN103633014A (zh) | 半导体器件制造方法 | |
JP2001244337A (ja) | 基材上にフィルムを作る方法及び装置 | |
JP2007005379A (ja) | 半導体装置の製造方法 | |
TW201735178A (zh) | 半導體裝置的形成方法 | |
US6649489B1 (en) | Poly etching solution to improve silicon trench for low STI profile | |
US8216944B2 (en) | Methods of forming patterns in semiconductor devices | |
JP4492949B2 (ja) | 電子デバイスの製造方法 | |
KR20050013824A (ko) | 얕은 트렌치 소자 분리 구조의 제조 방법 및 얕은 트렌치소자 분리 구조를 포함하는 미세 전자 소자 | |
US8017493B2 (en) | Method of planarizing a semiconductor device | |
TW202230477A (zh) | 形成電晶體及接觸插塞的方法及積體電路結構 | |
CN105390433A (zh) | 半导体器件制造方法 | |
CN104078418A (zh) | 半导体器件制造方法 | |
KR100672155B1 (ko) | 반도체 소자의 소자분리막 형성방법 | |
TW200824002A (en) | Method for fabricating semiconductor device | |
KR100607323B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
JPH10116904A (ja) | 半導体装置の製造方法 | |
US7135406B2 (en) | Method for damascene formation using plug materials having varied etching rates | |
US9875909B1 (en) | Method for planarizing material layer | |
KR100224782B1 (ko) | 반도체의 소자의 소자분리 방법 | |
CN111063655A (zh) | 一种半导体器件的制造方法 | |
US7981802B2 (en) | Method for manufacturing shallow trench isolation layer of semiconductor device | |
KR100912988B1 (ko) | 반도체 소자의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20151214 Address after: 221300 No. 16 Haihe West Road, Pizhou Economic Development Zone, Jiangsu, Pizhou Applicant after: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road 3# Applicant before: Institute of Microelectronics of the Chinese Academy of Sciences |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No. 16, Haihe West Road, Pizhou Economic Development Zone, Pizhou City, Jiangsu Province Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |
|
CP03 | Change of name, title or address |