CN1337740A - 具有绝缘柱的电容器的制造方法 - Google Patents
具有绝缘柱的电容器的制造方法 Download PDFInfo
- Publication number
- CN1337740A CN1337740A CN00121501.9A CN00121501A CN1337740A CN 1337740 A CN1337740 A CN 1337740A CN 00121501 A CN00121501 A CN 00121501A CN 1337740 A CN1337740 A CN 1337740A
- Authority
- CN
- China
- Prior art keywords
- insulated column
- capacitor
- layer
- manufacture method
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 230000001936 parietal effect Effects 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 45
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (25)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB001215019A CN1173393C (zh) | 2000-08-08 | 2000-08-08 | 具有绝缘柱的电容器的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB001215019A CN1173393C (zh) | 2000-08-08 | 2000-08-08 | 具有绝缘柱的电容器的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1337740A true CN1337740A (zh) | 2002-02-27 |
CN1173393C CN1173393C (zh) | 2004-10-27 |
Family
ID=4588836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001215019A Expired - Lifetime CN1173393C (zh) | 2000-08-08 | 2000-08-08 | 具有绝缘柱的电容器的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1173393C (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100456481C (zh) * | 2005-09-22 | 2009-01-28 | 三星电子株式会社 | 显示装置及其制造方法 |
US7825034B2 (en) | 2005-10-06 | 2010-11-02 | United Microelectronics Corp. | Method of fabricating openings and contact holes |
US8164141B2 (en) | 2005-10-06 | 2012-04-24 | United Microelectronics Corp. | Opening structure with sidewall of an opening covered with a dielectric thin film |
US8236702B2 (en) | 2005-10-06 | 2012-08-07 | United Microelectronics Corp. | Method of fabricating openings and contact holes |
CN104078418A (zh) * | 2013-03-29 | 2014-10-01 | 中国科学院微电子研究所 | 半导体器件制造方法 |
-
2000
- 2000-08-08 CN CNB001215019A patent/CN1173393C/zh not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100456481C (zh) * | 2005-09-22 | 2009-01-28 | 三星电子株式会社 | 显示装置及其制造方法 |
US7825034B2 (en) | 2005-10-06 | 2010-11-02 | United Microelectronics Corp. | Method of fabricating openings and contact holes |
US8164141B2 (en) | 2005-10-06 | 2012-04-24 | United Microelectronics Corp. | Opening structure with sidewall of an opening covered with a dielectric thin film |
US8236702B2 (en) | 2005-10-06 | 2012-08-07 | United Microelectronics Corp. | Method of fabricating openings and contact holes |
US8461649B2 (en) | 2005-10-06 | 2013-06-11 | United Microelectronics Corp. | Opening structure for semiconductor device |
US8592322B2 (en) | 2005-10-06 | 2013-11-26 | United Microelectronics Corp. | Method of fabricating openings |
CN104078418A (zh) * | 2013-03-29 | 2014-10-01 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN104078418B (zh) * | 2013-03-29 | 2018-05-25 | 江苏鲁汶仪器有限公司 | 半导体器件制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1173393C (zh) | 2004-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TAIWEN INTEGRATED CIRCUIT MANUFACTURE CO., LTD. Free format text: FORMER OWNER: WORLD ADVANCED INTEGRATED CIRCUIT STOCK-SHARING CO., LTD. Effective date: 20110406 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 000000 HSINCHU, TAIWAN, CHINA TO: 000000 HSINCHU CITY, TAIWAN, CHINA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110406 Address after: 000000 Hsinchu, Taiwan, China Patentee after: Taiwan Semiconductor Manufacturing Co., Ltd. Address before: 000000 Taiwan, Hsinchu, China Patentee before: World Advanced Integrated circuit stock-sharing Co., Ltd. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20041027 |