CN103996606A - 生长在蓝宝石衬底上的高均匀性AlN薄膜及其制备方法和应用 - Google Patents
生长在蓝宝石衬底上的高均匀性AlN薄膜及其制备方法和应用 Download PDFInfo
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- CN103996606A CN103996606A CN201410240826.5A CN201410240826A CN103996606A CN 103996606 A CN103996606 A CN 103996606A CN 201410240826 A CN201410240826 A CN 201410240826A CN 103996606 A CN103996606 A CN 103996606A
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- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 26
- 239000010980 sapphire Substances 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 5
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 239000012792 core layer Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 9
- 238000005137 deposition process Methods 0.000 claims description 8
- 230000007613 environmental effect Effects 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000010897 surface acoustic wave method Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052593 corundum Inorganic materials 0.000 abstract 4
- 230000006911 nucleation Effects 0.000 abstract 4
- 238000010899 nucleation Methods 0.000 abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 4
- 239000010408 film Substances 0.000 description 66
- 238000004549 pulsed laser deposition Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410240826.5A CN103996606B (zh) | 2014-05-30 | 2014-05-30 | 生长在蓝宝石衬底上的高均匀性AlN薄膜及其制备方法和应用 |
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CN201410240826.5A CN103996606B (zh) | 2014-05-30 | 2014-05-30 | 生长在蓝宝石衬底上的高均匀性AlN薄膜及其制备方法和应用 |
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CN103996606A true CN103996606A (zh) | 2014-08-20 |
CN103996606B CN103996606B (zh) | 2017-01-25 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105336821A (zh) * | 2015-10-08 | 2016-02-17 | 映瑞光电科技(上海)有限公司 | GaN基LED外延结构及其制备方法 |
CN106711020A (zh) * | 2015-11-18 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 衬底的氮化方法及氮化镓缓冲层的制备方法 |
CN110517950A (zh) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | 一种在金刚石衬底上制备闪锌矿GaN薄膜的方法 |
CN111101204A (zh) * | 2019-12-12 | 2020-05-05 | 华南师范大学 | 单晶AlN薄膜及其制备方法和应用 |
CN113913749A (zh) * | 2021-09-30 | 2022-01-11 | 松山湖材料实验室 | 氮化铝薄膜及其制备方法、光电子器件 |
CN115161601A (zh) * | 2022-07-19 | 2022-10-11 | 重庆华谱科学仪器有限公司 | 一种超快激光沉积类金刚石膜、防反射膜与防指纹膜多膜层的加工方法与设备 |
Citations (4)
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---|---|---|---|---|
CN1894093A (zh) * | 2003-11-14 | 2007-01-10 | 克利公司 | 用于高质量同质外延的连位氮化镓衬底 |
US20100075107A1 (en) * | 2008-05-28 | 2010-03-25 | The Regents Of The University Of California | Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate |
CN102412123A (zh) * | 2011-11-07 | 2012-04-11 | 中山市格兰特实业有限公司火炬分公司 | 一种氮化铝的制备方法 |
CN203895487U (zh) * | 2014-05-30 | 2014-10-22 | 广州市众拓光电科技有限公司 | 生长在蓝宝石衬底上的高均匀性AlN薄膜 |
-
2014
- 2014-05-30 CN CN201410240826.5A patent/CN103996606B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1894093A (zh) * | 2003-11-14 | 2007-01-10 | 克利公司 | 用于高质量同质外延的连位氮化镓衬底 |
US20100075107A1 (en) * | 2008-05-28 | 2010-03-25 | The Regents Of The University Of California | Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate |
CN102412123A (zh) * | 2011-11-07 | 2012-04-11 | 中山市格兰特实业有限公司火炬分公司 | 一种氮化铝的制备方法 |
CN203895487U (zh) * | 2014-05-30 | 2014-10-22 | 广州市众拓光电科技有限公司 | 生长在蓝宝石衬底上的高均匀性AlN薄膜 |
Non-Patent Citations (1)
Title |
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YIYI WANG: "Real-time synchrotron x-ray studies of low- and high-temperature nitridation of c-plane sapphire", 《PHYSICAL REVIEW B》 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105336821A (zh) * | 2015-10-08 | 2016-02-17 | 映瑞光电科技(上海)有限公司 | GaN基LED外延结构及其制备方法 |
CN106711020A (zh) * | 2015-11-18 | 2017-05-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 衬底的氮化方法及氮化镓缓冲层的制备方法 |
CN106711020B (zh) * | 2015-11-18 | 2021-09-17 | 北京北方华创微电子装备有限公司 | 衬底的氮化方法及氮化镓缓冲层的制备方法 |
CN110517950A (zh) * | 2019-07-29 | 2019-11-29 | 太原理工大学 | 一种在金刚石衬底上制备闪锌矿GaN薄膜的方法 |
CN111101204A (zh) * | 2019-12-12 | 2020-05-05 | 华南师范大学 | 单晶AlN薄膜及其制备方法和应用 |
CN113913749A (zh) * | 2021-09-30 | 2022-01-11 | 松山湖材料实验室 | 氮化铝薄膜及其制备方法、光电子器件 |
CN113913749B (zh) * | 2021-09-30 | 2023-09-22 | 松山湖材料实验室 | 氮化铝薄膜及其制备方法、光电子器件 |
CN115161601A (zh) * | 2022-07-19 | 2022-10-11 | 重庆华谱科学仪器有限公司 | 一种超快激光沉积类金刚石膜、防反射膜与防指纹膜多膜层的加工方法与设备 |
CN115161601B (zh) * | 2022-07-19 | 2024-04-02 | 重庆华谱科学仪器有限公司 | 一种超快激光沉积类金刚石膜、防反射膜与防指纹膜多膜层的加工方法与设备 |
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Effective date of registration: 20200320 Address after: 510000 Room 303, building 1, No. 23, Jinzhong Road, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Guangzhou Everbright Technology Co.,Ltd. Address before: The science city of Guangzhou high tech Industrial Development Zone 510000 Guangdong province Guangzhou Nanxiang Road No. 62 building Patentee before: GUANGZHOU ZHONGTUO PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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Denomination of invention: High Homogeneity AlN Films Grown on Sapphire Substrates and Their Preparation Methods and Applications Effective date of registration: 20220926 Granted publication date: 20170125 Pledgee: Agricultural Bank of China Co.,Ltd. Heyuan Yuancheng District Sub branch Pledgor: Guangzhou Everbright Technology Co.,Ltd. Registration number: Y2022980016273 |