CN103985848A - 一种利用掺杂硅颗粒制备纳米多孔硅的方法 - Google Patents
一种利用掺杂硅颗粒制备纳米多孔硅的方法 Download PDFInfo
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- CN103985848A CN103985848A CN201410243024.XA CN201410243024A CN103985848A CN 103985848 A CN103985848 A CN 103985848A CN 201410243024 A CN201410243024 A CN 201410243024A CN 103985848 A CN103985848 A CN 103985848A
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- silicon
- porous silicon
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- nitrate
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 50
- 239000011856 silicon-based particle Substances 0.000 title claims abstract description 39
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 238000012545 processing Methods 0.000 claims abstract description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 13
- 229910002651 NO3 Inorganic materials 0.000 claims abstract description 10
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- 230000035484 reaction time Effects 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 57
- 239000002086 nanomaterial Substances 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical group [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 8
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 101100433727 Caenorhabditis elegans got-1.2 gene Proteins 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 8
- 229910052744 lithium Inorganic materials 0.000 abstract description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 5
- 239000003518 caustics Substances 0.000 abstract description 4
- 238000002474 experimental method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 3
- 239000011148 porous material Substances 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000956 alloy Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000012798 spherical particle Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 229910001416 lithium ion Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000012224 working solution Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006253 efflorescence Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910021487 silica fume Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002153 silicon-carbon composite material Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
Description
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CN201410243024.XA CN103985848B (zh) | 2014-06-03 | 2014-06-03 | 一种利用掺杂硅颗粒制备纳米多孔硅的方法 |
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CN201410243024.XA CN103985848B (zh) | 2014-06-03 | 2014-06-03 | 一种利用掺杂硅颗粒制备纳米多孔硅的方法 |
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CN103985848A true CN103985848A (zh) | 2014-08-13 |
CN103985848B CN103985848B (zh) | 2017-03-29 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701491A (zh) * | 2015-03-31 | 2015-06-10 | 吕铁铮 | 一种纳米多孔硅锂电池负极材料及其制备方法与应用 |
CN105967740A (zh) * | 2016-05-02 | 2016-09-28 | 北京工业大学 | 一种激光熔覆与化学脱合金复合制备微纳米结构块体硅材料的方法 |
CN106629736A (zh) * | 2016-12-20 | 2017-05-10 | 浙江大学 | 一种多孔硅粉的制备方法 |
CN106672975A (zh) * | 2016-12-20 | 2017-05-17 | 浙江大学 | 一种低成本纳米多孔硅粉的制备方法 |
CN106744971A (zh) * | 2016-12-15 | 2017-05-31 | 盐城工学院 | 一种三维纳米多孔硅的制备方法及制备装置 |
CN110065945A (zh) * | 2019-03-22 | 2019-07-30 | 江苏载驰科技股份有限公司 | 一种锂电用纳米硅颗粒的制备方法 |
CN110143593A (zh) * | 2019-04-29 | 2019-08-20 | 浙江大学 | 多孔硅粉的制备方法、多孔硅粉以及其应用 |
CN110649243A (zh) * | 2019-09-29 | 2020-01-03 | 杭州电子科技大学 | 一种超细磷掺杂多孔硅纳米材料的制备方法及应用 |
US20220302433A1 (en) * | 2015-07-16 | 2022-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Electrode, storage battery, power storage device, and electronic device |
CN111863604B (zh) * | 2020-07-30 | 2023-06-23 | 盐城工学院 | 一种pn结硅微球的制备方法 |
Citations (3)
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CN101453016A (zh) * | 2007-11-29 | 2009-06-10 | 比亚迪股份有限公司 | 负极活性材料及其制备方法和负极及锂离子电池 |
JP2012114091A (ja) * | 2008-10-10 | 2012-06-14 | Nexeon Ltd | シリコン又はシリコン系材料を含む構造化された粒子の製造方法 |
CN103098265A (zh) * | 2010-04-09 | 2013-05-08 | 奈克松有限公司 | 制造由硅或硅基材料构成的结构化粒子的方法及其在锂可充电电池中的用途 |
-
2014
- 2014-06-03 CN CN201410243024.XA patent/CN103985848B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101453016A (zh) * | 2007-11-29 | 2009-06-10 | 比亚迪股份有限公司 | 负极活性材料及其制备方法和负极及锂离子电池 |
JP2012114091A (ja) * | 2008-10-10 | 2012-06-14 | Nexeon Ltd | シリコン又はシリコン系材料を含む構造化された粒子の製造方法 |
CN103098265A (zh) * | 2010-04-09 | 2013-05-08 | 奈克松有限公司 | 制造由硅或硅基材料构成的结构化粒子的方法及其在锂可充电电池中的用途 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104701491A (zh) * | 2015-03-31 | 2015-06-10 | 吕铁铮 | 一种纳米多孔硅锂电池负极材料及其制备方法与应用 |
US20220302433A1 (en) * | 2015-07-16 | 2022-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Electrode, storage battery, power storage device, and electronic device |
CN105967740A (zh) * | 2016-05-02 | 2016-09-28 | 北京工业大学 | 一种激光熔覆与化学脱合金复合制备微纳米结构块体硅材料的方法 |
CN105967740B (zh) * | 2016-05-02 | 2018-12-18 | 北京工业大学 | 一种激光熔覆与化学脱合金复合制备微纳米结构块体硅材料的方法 |
CN106744971A (zh) * | 2016-12-15 | 2017-05-31 | 盐城工学院 | 一种三维纳米多孔硅的制备方法及制备装置 |
CN106629736A (zh) * | 2016-12-20 | 2017-05-10 | 浙江大学 | 一种多孔硅粉的制备方法 |
CN106672975A (zh) * | 2016-12-20 | 2017-05-17 | 浙江大学 | 一种低成本纳米多孔硅粉的制备方法 |
CN110065945A (zh) * | 2019-03-22 | 2019-07-30 | 江苏载驰科技股份有限公司 | 一种锂电用纳米硅颗粒的制备方法 |
CN110143593A (zh) * | 2019-04-29 | 2019-08-20 | 浙江大学 | 多孔硅粉的制备方法、多孔硅粉以及其应用 |
CN110649243A (zh) * | 2019-09-29 | 2020-01-03 | 杭州电子科技大学 | 一种超细磷掺杂多孔硅纳米材料的制备方法及应用 |
CN110649243B (zh) * | 2019-09-29 | 2022-05-06 | 杭州电子科技大学 | 一种超细磷掺杂多孔硅纳米材料的制备方法及应用 |
CN111863604B (zh) * | 2020-07-30 | 2023-06-23 | 盐城工学院 | 一种pn结硅微球的制备方法 |
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Effective date of registration: 20200624 Address after: No.3 Xiyan Road, Binjiang Economic Development Zone, Jiangning District, Nanjing City, Jiangsu Province Patentee after: NANJING TOPSTEK AUTOMATION EQUIPMENT Co.,Ltd. Address before: 224051 Yancheng City hope road, Jiangsu, No. 9 Patentee before: YANCHENG INSTITUTE OF TECHNOLOGY |
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Denomination of invention: A method for preparing nano porous silicon using doped silicon particles Granted publication date: 20170329 Pledgee: Bank of China Limited by Share Ltd. Nanjing Jiangning branch Pledgor: NANJING TOPSTEK AUTOMATION EQUIPMENT CO.,LTD. Registration number: Y2024980010480 |