CN103985668A - 铜互连的制备方法 - Google Patents
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 198
- 239000010949 copper Substances 0.000 title claims abstract description 198
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 196
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000005498 polishing Methods 0.000 claims abstract description 47
- 238000000137 annealing Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 17
- 230000008439 repair process Effects 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 9
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 28
- 239000011265 semifinished product Substances 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000005518 electrochemistry Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
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- 238000005530 etching Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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Abstract
本发明公开了一种铜互连的制备方法,属于半导体技术领域。其包括:在晶圆的上表面设置介质层,并对所述介质层进行处理形成通孔和/或沟槽,并在形成有通孔或沟槽的介质层上表面从下到上依次形成铜的阻挡层和铜籽晶层;在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层,并对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层;通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层,并保留所述通孔和/或沟槽中填充的铜,从而形成铜导线。本发明缓解或者避免了铜导线有效厚度的降低,以及器件可靠性的下降。
Description
技术领域
本发明属于半导体技术领域,具体地说,涉及一种铜互连的制备方法。
背景技术
铜互连技术是指在半导体集成电路互连层的制作中采用铜金属材料取代传统铝金属互连材料的新型半导体制造工艺。由于采用铜互连线可以降低互连层的厚度,使得互连层间的分布电容降低,从而使得频率提高成为可能。但是,随着晶片尺寸越来越大,工艺技术代越来越小,集成度越来越高,对器件的可靠性要求越发严格,对现有铜互连工艺也提出了更高的要求。
图1为现有技术中铜互连的制备方法的流程图;如图1所示,其包括:
S101、在晶圆的上表面沉积低k值介质层;
图2为步骤S101处理之后的半成品结构示意图;如图2所示,晶圆101的上表面沉积有低k值介质层102。
S102、采用光刻和刻蚀工艺在介质层上形成通孔或沟槽。
图3为步骤S102处理之后的半成品结构示意图;如图3所示,采用光刻和刻蚀工艺在介质层102上形成了通孔或沟槽103,该通孔或沟槽103用于在后续工艺中形成铜导线。
S103、采用物理气相沉积工艺沉积铜的阻挡层和铜籽晶层。
图4为步骤S103处理之后的半成品结构示意图;如图4所示,采用物理气相沉积工艺(physical vapor deposition,简称PVD)沉积了铜的阻挡层104和铜籽晶层105。
S104、采用电化学电镀工艺沉积铜互连层。
图5为步骤S104处理之后的半成品结构示意图;如图5所示,采用电化学电镀(Electrochemical Polymerization,ECP)工艺沉积了铜互连层106。
S105、对铜进行退火,形成铜互连层。
图6为步骤S105处理之后的半成品结构示意图;如图6所示,对铜进行退火形成了铜互连层107。
S106、用化学机械抛光将铜互连层抛光至介质层表面,形成铜导线。
图7为步骤S106处理之后的半成品结构示意图;如图7所示,采用化学机械抛光(chemical mechanical planarization,CMP)将铜互连层抛光至介质层102表面,形成铜导线108。
在上述图1所示的铜互连的制备方法中,在步骤S104铜电镀时,由于晶片上各区域的图形密度、大小不同,导致铜电镀的铜厚度不同,比如在图形尺寸较小、密度较高的区域铜层会更厚,即出现过电镀现象。在后续步骤S106的铜抛光处理中,一方面由于抛光前表面形貌不同,在不同区域的抛光压力会有所差异;另一方面由于采用远高于阻挡层和介质层的抛光速率的选择性的抛光液,晶片上图形密度的差异会影响抛光后的表面质量,如图形尺寸较大的区域或图形密度高的区域有腐蚀坑109,在某些区域有铜残留110。因此,由于腐蚀坑109和铜残留110的存在,降低了铜互连中铜的有效厚度和器件的可靠性。
从改善传统铜互连中的铜表面形貌解决图1所示铜互连工艺中存在的缺陷,中国公开专利CN102856249A公开了一种解决方案,采用了沉积薄膜热回流的方法,即在铜电镀后沉积一层薄膜进行热回流来消除铜电镀晶片上由于图形密度不同造成的铜厚度不同。但是这种方法有两种缺陷:
1)热回流的高温会导致低k值的介质材料性质不稳定,造成40nm以下工艺代铜互连器件性能的降低;
2)在铜互连中引入新的材料,对工艺的稳定性带来风险。
另外一篇中国公开专利CN102222638A公开了另外一种解决方案,在第一步铜抛光到介质层后沉积硅化物,然后再第二步抛光来解决铜残留的问题。但是,该方案由于硅化物沉积的高温和氧气的影响,容易导致表面暴露的铜被氧化,铜导线的电阻率升高,导致器件性能降低。
综上,现有技术中并没有提供一通铜互连的制备方法,以有效消除铜电镀和/或铜抛光过程中图形密度造成的表面缺陷如腐蚀坑、铜残留,改善铜的有效厚度和器件性能。
发明内容
本发明所要解决的技术问题是提供一种铜互连的制备方法,用以有效避免铜电镀和/或铜抛光过程中图形密度造成的表面缺陷如腐蚀坑、铜残留,改善铜的有效厚度和器件性能。
为了解决上述技术问题,本发明提供了一种铜互连的制备方法,其包括:
在晶圆的上表面设置介质层,并对所述介质层进行处理形成通孔和/或沟槽,并在形成有通孔或沟槽的介质层上表面从下到上依次形成铜的阻挡层和铜籽晶层;
在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层,并对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层;
通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层,并保留所述通孔和/或沟槽中填充的铜,从而形成铜导线。
优选地,在本发明的一实施例中,所述对所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层包括:
使用高选择比的抛光液并依据终点检测方法,快速地去除阻挡层表面的体铜;
使用低压力抛光对所述通孔和/或沟槽中沉积铜材料进行抛光处理,依据终点检测方法以及低压力检测方法使抛光停止于所述阻挡层。
优选地,在本发明的一实施例中,所述通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层之前,所述在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层,并对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理之后,包括:
在所述阻挡层上表面以及位于所述通孔和/或沟槽的铜互连层上表面沉积铜并对其进行退火处理形成修复层。
优选地,在本发明的一实施例中,所述通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层还包括:去除所述修复层中的铜。
优选地,在本发明的一实施例中,在所述阻挡层上表面以及位于所述通孔和/或沟槽的铜互连层上表面沉积铜并对其进行退火处理时,采用的气氛为H2、N2或其混合物,温度在100℃-150℃,时间在60秒-400秒。
优选地,在本发明的一实施例中,所述通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层包括:采用软的抛光垫和低选择比的抛光液,平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层。
优选地,在本发明的一实施例中,所述介质层的材料包括黑钻石系列或SiLK系列,相对介电常数的值为2.2-3.0。
优选地,在本发明的一实施例中,所述阻挡层的材料包括Ta、TaN、Ru、Co或Mn,以及其氧化物、氮氧化物。
优选地,在本发明的一实施例中,在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层时,采用的气氛为H2、N2或其混合物,温度在100℃-200℃,时间在30秒-200秒。
与现有的方案相比,达到如下技术效果:由于在铜互连层进行分步抛光,相对于现有技术来说,避免了铜残留,有效避免了铜电镀和/或铜抛光过程中图形密度造成的表面缺陷;在一优选实施例中,在分步抛光的基础上,再增加了修复层,填充了腐蚀坑,进一步有效避免了铜电镀和/或铜抛光过程中图形密度造成的表面缺陷。从而最终缓解或者避免了铜导线有效厚度的降低,以及器件可靠性的下降。
附图说明
图1为现有技术中铜互连的制备方法的流程图;
图2为步骤S101处理之后的半成品结构示意图;
图3为步骤S102处理之后的半成品结构示意图;
图4为步骤S103处理之后的半成品结构示意图;
图5为步骤S104处理之后的半成品结构示意图;
图6为步骤S105处理之后的半成品结构示意图;
图7为步骤S106处理之后的半成品结构示意图;
图8为本发明实施例一铜互连的制备方法的流程示意图;
图9为步骤S801处理之后的半成品结构示意图;
图10为步骤S802处理之后的半成品结构示意图;
图11为步骤S803处理之后的半成品结构示意图;
图12为步骤S804处理之后的半成品结构示意图;
图13为步骤S805处理之后的半成品结构示意图;
图14为步骤S806处理之后的半成品结构示意图;
图15为步骤S807处理之后的半成品结构示意图;
图16为本发明实施例二铜互连的制备方法的流程示意图;
图17、图18分别为步骤S907中修复层退火处理前后的半成品结构示意图。
具体实施方式
以下将配合图式及实施例来详细说明本发明的实施方式,藉此对本发明如何应用技术手段来解决技术问题并达成技术功效的实现过程能充分理解并据以实施。
本发明的核心思想之一:
本发明下述实施例提供了一种铜互连的制备方法,其核心思想包括:
在晶圆的上表面设置介质层,并对所述介质层进行处理形成通孔和/或沟槽,并在形成有通孔或沟槽的介质层上表面从下到上依次形成铜的阻挡层和铜籽晶层;
在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层,并对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层;
通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层,并保留所述通孔和/或沟槽中填充的铜,从而形成铜导线。
下述实施例中,以12英寸40nm铜互连制备方法为例,对本发明的上述核心思想做一简要说明。需要说明的是,根据具体的半导体工艺代,下述实施例中描述的具体工艺参数可能有不同。
图8为本发明实施例一铜互连的制备方法的流程示意图;如图8所示,其可以包括:
步骤S801、在晶圆的上表面设置介质层;
本实施例中,步骤S801中,通过沉积低k值的介质材料形成介质层,介质材料可以为黑钻石系列(Black Diamond,BD),SiLK系列,其相对介电常数k值可以2.2-3.0。当具体为黑钻石系列(Black Diamond,BD)II时,其k值可为2.5-2.6。
图9为步骤S801处理之后的半成品结构示意图;如图9所示,晶圆901的上表面设置有介质层902。
步骤S802、对所述介质层进行处理形成通孔和/或沟槽;
图10为步骤S802处理之后的半成品结构示意图;如图10所示,在图9所示的结构基础上,形成了通孔和/或沟槽903,用于后续沉积铜形成铜导线。
步骤S803、在形成有通孔或沟槽的介质层上表面从下到上依次形成铜的阻挡层和铜籽晶层;
本实施例中,通过物理气相沉积工艺(Physical Vapor Deposition,PVD)沉积铜的阻挡层和铜籽晶层。本实施例中,阻挡层材料包括Ta和TaN,厚度分别为和铜籽晶层的厚度为其中,表示埃,一埃等于十的负十次方米。
图11为步骤S803处理之后的半成品结构示意图;如图11所示,在图10所示结构的基础上,形成了铜的阻挡层904和铜籽晶层905。
步骤S804、在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料形成退火前的铜互连层;
本实施例中,可以采用电化学电镀ECP形成退火前的铜互连层。
图12为步骤S804处理之后的半成品结构示意图;如图12所示,在图11所示结构的基础上,形成了退火前的铜互连层906。
上述步骤S801-S804可参见现有技术中对应步骤中的工艺执行,详细不再赘述。
步骤S805、对所述阻挡层上表面及所述通孔和/或沟槽中沉积的铜材料进行退火处理形成退火后的铜互连层;
本实施中,由于退火可以有效的将铜电镀过程中的添加剂挥发出来,并且可以促进铜晶粒的进一步生长,从而降低铜导线的电阻率。另外,考虑到低k值介质材料BD II在高温下容易变性因此控制退火温度是关键之一。本实施例中,退火时采用的气氛为H2、N2的混合物,温度在180℃,时间在60秒。
图13为步骤S805处理之后的半成品结构示意图;如图13所示,在图12所示结构的基础上,形成了退火后的铜互连层907。
步骤S806、对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层;
本实施例中,由于铜表面会随时间而慢慢氧化,会影响抛光速率和抛光质量,因此抛光可以在步骤S805的退火后6小时内进行。
本实施例中,步骤S806具体可以包括:
步骤S816、使用高选择比的抛光液并依据终点检测方法,快速地去除阻挡层表面的体铜;
本实施中,高选择比的抛光液其铜抛光速率远高于介质材料的抛光速率,可以很快地将表面的体铜快速去除。
步骤S826、使用低压力抛光对所述通孔和/或沟槽中沉积铜材料进行抛光处理,依据终点检测方法以及低压力检测方法使抛光停止于所述阻挡层。
本实施例中,终点检测方法可以是基于驱动电机电流变化的终点检测,或者基于声发射信号的终点检测或者基于抛光垫温度变化的终点检测或者基于光学分光反射率的终点检测。
本实施例中,低压力检测方法可以基于终点监测曲线进行判断,详细不再赘述。
图14为步骤S806处理之后的半成品结构示意图;如图14所示,在对图13所示结构进行分步抛光出后,虽然会仍然出现了腐蚀坑908,但无任何铜残留。相对于现有技术来说,避免了铜残留,缓解或者避免了铜导线有效厚度的降低,以及器件可靠性的下降。
步骤S807、通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层,并保留所述通孔和/或沟槽中填充的铜,从而形成铜导线。
图15为步骤S807处理之后的半成品结构示意图;如图15所示,在对图14所示结构执行步骤S807处理之后,在有通孔或/和沟槽的地方形成了铜导线909。
本实施例中,步骤S807中,采用软的抛光垫和低选择比的抛光液,平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层。本实施例中,抛光压力在1.0-2.0psi,时间在30秒-120秒,低k值介质材料损失小于优选地,抛光压力为1.5psi,时间为90秒,保证晶片上没有铜材料,并形成铜导线909。由于铜和低k值介质材料的质地都较软,采用软的抛光垫避免抛光中在晶片表面造成划痕,采用低选择比的抛光液可以大大降低图形密度对抛光带来的影响,不会进一步产生腐蚀等缺陷。
图16为本发明实施例二铜互连的制备方法的流程示意图;如图16所示,其可以包括:
步骤S901、在晶圆的上表面设置介质层;
步骤S902、对所述介质层进行处理形成通孔和/或沟槽;
步骤S903、在形成有通孔或沟槽的介质层上表面从下到上依次形成铜的阻挡层和铜籽晶层;
步骤S904、在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料形成退火前的铜互连层;
步骤S905、对所述阻挡层上表面及所述通孔和/或沟槽中沉积的铜材料进行退火处理形成退火后的铜互连层;
步骤S906、对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层;
有关步骤S901-步骤S906,请参见图8描述,在此不再赘述。
步骤S907、所述阻挡层上表面以及位于所述通孔和/或沟槽的铜互连层上表面沉积铜并对其进行退火处理形成修复层。
本实施例中,修复层可以弥补之前造成的腐蚀坑,使通孔和/或沟槽内填满铜。为了避免后续抛光时间过长导致其他缺陷的产生,修复层的厚度不易过厚,具体厚度不做具体限定,比如在
本实施例中,对修复层进行低温退火,退火温度为120℃,时间为200秒,形成退火后的铜修复层。此处的退火一方面可以使物理溅射的铜膜晶粒长大,从而降低铜导线的电阻率;另外可以使新溅射的铜膜和之前电镀的铜膜能很好的结合,避免产生界面。
图17、图18分别为步骤S907中修复层退火处理前后的半成品结构示意图;如图17、18所示,在阻挡层904上表面以及位于所述通孔和/或沟槽903的铜互连层906上表面沉积铜形成退火前的修复层910、退火后的修复层911。
步骤S908、通过平坦化处理去除所述铜互连层中的铜、所述修复层中的铜、所述介质层表面的阻挡层以及部分所述介质层,并保留所述通孔和/或沟槽中填充的铜,从而形成铜导线。
有关步骤S908的详细描述请参见图8中对步骤S807的相关记载,在此不再赘述。
本步骤中,通过结合了步骤S906的分步抛光缓解或者避免了铜残留,通过S907中的修复层,缓解或避免了腐蚀坑,从而改善了铜的有效厚度和器件的性能。
上述说明示出并描述了本发明的若干优选实施例,但如前所述,应当理解本发明并非局限于本文所披露的形式,不应看作是对其他实施例的排除,而可用于各种其他组合、修改和环境,并能够在本文所述发明构想范围内,通过上述教导或相关领域的技术或知识进行改动。而本领域人员所进行的改动和变化不脱离本发明的精神和范围,则都应在本发明所附权利要求的保护范围内。
Claims (9)
1.一种铜互连的制备方法,其特征在于,包括:
在晶圆的上表面设置介质层,并对所述介质层进行处理形成通孔和/或沟槽,并在形成有通孔或沟槽的介质层上表面从下到上依次形成铜的阻挡层和铜籽晶层;
在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层,并对所述通孔和/或沟槽、所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层;
通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层,并保留所述通孔和/或沟槽中填充的铜,从而形成铜导线。
2.根据权利要求1所述的方法,其特征在于,所述对所述阻挡层上表面的所述铜互连层进行分步抛光处理,以去除体铜并停止于所述阻挡层包括:
使用高选择比的抛光液并依据终点检测方法,快速地去除阻挡层表面的体铜;
使用低压力抛光对所述通孔和/或沟槽中沉积铜材料进行抛光处理,依据终点检测方法以及低压力检测方法使抛光停止于所述阻挡层。
3.根据权利要求1所述的方法,其特征在于,所述形成铜导线之前,所述去除体铜并停止于所述阻挡层之后,包括:
在所述阻挡层上表面以及位于所述通孔和/或沟槽的铜互连层上表面沉积铜并对其进行退火处理形成修复层。
4.根据权利要求3所述的方法,其特征在于,所述通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层还包括:去除所述修复层中的铜。
5.根据权利要求3所述的方法,其特征在于,在所述阻挡层上表面以及位于所述通孔和/或沟槽的铜互连层上表面沉积铜并对其进行退火处理时,采用的气氛为H2、N2或其混合物,温度在100℃-150℃,时间在60秒-400秒。
6.根据权利要求1所述的方法,其特征在于,所述通过平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层包括:采用软的抛光垫和低选择比的抛光液,平坦化处理去除所述铜互连层中的铜、所述介质层表面的阻挡层以及部分所述介质层。
7.根据权利要求1所述的方法,其特征在于,所述介质层的材料包括黑钻石系列或SiLK系列,相对介电常数的值为2.2-3.0。
8.根据权利要求1所述的方法,其特征在于,所述阻挡层的材料包括Ta、TaN、Ru、Co或Mn,以及其氧化物、氮氧化物。
9.根据权利要求1所述的方法,其特征在于,在所述阻挡层上表面及所述通孔和/或沟槽中沉积铜材料并对其进行退火处理形成铜互连层时,采用的气氛为H2、N2或其混合物,温度在100℃-200℃,时间在30秒-200秒。
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