CN103972277B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN103972277B
CN103972277B CN201410045315.8A CN201410045315A CN103972277B CN 103972277 B CN103972277 B CN 103972277B CN 201410045315 A CN201410045315 A CN 201410045315A CN 103972277 B CN103972277 B CN 103972277B
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semiconductor device
substrate
electrode
integrated
manufacture method
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CN201410045315.8A
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CN103972277A (zh
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山口义弘
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供一种能够实现大容量化并且能够容易地制造的半导体装置及半导体装置的制造方法。本发明具有：板状的电极部件即板电极（5）；在板电极（5）上设置的作为一体化绝缘片的环氧片（3）；以及在环氧片（3）上设置的作为控制基板的双面印刷基板（1），本发明具有将板电极（5）和双面印刷基板（1）通过环氧片（3）形成为一体的基板一体型电极（10）。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及半导体装置的制造方法。
背景技术
作为功率用半导体装置的功率MOSFET（Metal Oxide Semiconductor FieldEffect Transistor））或IGBT（Insulated Gate Bipolar Transistor）等半导体装置的封装件，考虑到制造成本及生产率等方面，大多以通过传递模塑成型实现的树脂封装形成。在功率用半导体装置中使用其主流基材即Si（硅）及SiC（碳化硅）的情况下，也大多通过传递模塑成型进行树脂封装。
例如，在专利文献1中公开了一种树脂封装的半导体装置。此外，公开了一种在专利文献1的情况下考虑到装置小型化及配线便利性，而使直立在封装树脂表面上的电极露出的构造。
另外，在专利文献2中，在传递模塑成型的半导体装置中，为了减少功率损耗，代替将发射极电极和引线端子经由接合线连接，使用将电极之间直接连接的直接引线接合方式。另外，将直立地接合在配置于芯片上的板电极上的电极柱，设置为露出至外部。
关于功率用半导体装置，在将以SiC为代表的能够在高温下动作的材料作为基材的元件的应用方面推进开发，要求能够实现高温动作、并且能够大容量化的构造。
在上述半导体装置中，在希望以不增大装置尺寸的状态进一步实现大容量化的情况下，例如，如在专利文献3中公开所示，需要通过在控制基板的下方配置半导体元件的电极等而有效地利用装置内的空间。
专利文献1：日本专利第5012772号公报
专利文献2：日本特开2012-74543号公报
专利文献3：日本特开2006-303006号公报
但是，在专利文献3中公开的这种构造中，在控制基板和半导体元件之间具有经由引线框架进行的连接等，从而存在容易使制造工序变得复杂的问题。
发明内容
本发明就是为了解决上述问题而提出的，其目的在于提供一种能够实现大容量化，并且能够容易地制造的半导体装置及半导体装置的制造方法。
本发明的一个方式涉及的半导体装置具有：板状的电极部件；在所述电极部件上设置的一体化绝缘片；以及在所述一体化绝缘片上设置的控制基板，该半导体装置的特征在于，具有使所述电极部件和所述控制基板通过所述一体化绝缘片形成为一体的基板一体型电极。
本发明的一个方式涉及的半导体装置的制造方法，其特征在于，具有：（a）在板状的电极部件上设置一体化绝缘片的工序；（b）在所述一体化绝缘片上设置控制基板，将所述电极部件和所述控制基板经由所述一体化绝缘片形成为一体的工序；以及（c）将在所述工序（b）中形成为一体而得到的基板一体型电极与半导体元件电连接的工序。
发明的效果
根据本发明的上述方式，具有经由一体化绝缘片将电极部件和控制基板形成为一体的基板一体型电极，从而能够实现大容量化，并且，能够容易地制造。
附图说明
图1是表示本发明的实施方式涉及的半导体装置中的基板一体型电极的制造工序的图。
图2是表示本发明的实施方式涉及的半导体装置中的基板一体型电极的制造工序的图。
图3是表示本发明的实施方式涉及的半导体装置中的基板一体型电极的制造工序的图。
图4是表示本发明的实施方式涉及的半导体装置中的基板一体型电极的制造工序的图。
图5是表示本发明的实施方式涉及的半导体装置中的基板一体型电极的制造工序的图。
图6是本发明的实施方式涉及的半导体装置的俯视图。
图7是本发明的实施方式涉及的半导体装置的剖视图。
图8是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图9是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图10是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图11是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图12是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图13是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图14是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图15是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图16是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图17是表示本发明的实施方式涉及的半导体装置的制造工序的图。
图18是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图19是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图20是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图21是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图22是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图23是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图24是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图25是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图26是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图27是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图28是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图29是表示本发明的实施方式涉及的半导体装置的制造工序的其他方式的图。
图30是本发明的实施方式涉及的变形例的半导体装置的俯视图。
图31是本发明的实施方式涉及的变形例的半导体装置的剖视图。
图32是本发明的前提技术涉及的半导体装置的俯视图。
图33是本发明的前提技术涉及的半导体装置的剖视图。
标号的说明
1双面印刷基板，2控制电路图案，3环氧片，4屏蔽体，5、25板电极，6阻焊层，10、10A基板一体型电极，12功率用半导体装置，13铝导线，14散热片，15绝缘层，16基底板，17模塑树脂，18电极块，19阳极端子，20阴极端子，21控制端子，22基板，23开口部，24接合材料，26接合部，100、101、102半导体装置。
具体实施方式
以下，参照附图，说明本发明的实施方式。
此外，在本说明书中，使用了上表面或下表面等用语，但这些用语是为了方便区分各表面而使用的，与实际的上下左右方向没有关系。
<实施方式>
<基板一体型电极的制造方法>
图1～5是表示本发明的本实施方式涉及的半导体装置中的基板一体型电极10的制造工序的图。
首先如图1所示，在双面印刷基板1的两个表面上制作控制电路图案2。控制电路图案2例如由铜材料构成。
接着，如图2所示，在双面印刷基板1的下表面侧设置由环氧树脂构成的环氧片3，然后在环氧片3的下表面侧设置板电极5。
环氧片3是例如使在印刷基板中使用的玻璃纤维布浸渍环氧树脂而得到的环氧预浸料，利用设置在环氧片3的表面或内部的由铜板或网格状的铜材料构成的屏蔽体4进行加强。此外，屏蔽体4不是必需的结构，但通过具有该结构，能够降低SiC设备等在进行高频切换时可能产生的噪声。
板电极5由铜材料构成，是流过主电流的电极。
而且，在双面印刷基板1的上表面侧对由阻绝剂、聚酰胺、聚酰胺酰亚胺或聚酰亚胺构成的阻焊层6进行图案化。阻焊层6以覆盖控制电路图案2的方式设置，但不设置在控制电路图案2的导线接合部W以及在后续工序中进行冲裁加工的部分。通过使控制电路图案2由阻焊层6覆盖，从而抑制在后续工序中设置的模塑树脂17剥离。即，抑制下述情况：在通过传递模塑成型设置模塑树脂17时的热循环中，由于模塑树脂17的线膨胀系数、控制电路图案2的材料即Cu材料的线膨胀系数、及环氧片3的材料即环氧树脂材料的线膨胀系数之间的差异而产生应力，导致发生模塑树脂17的剥离。如果发生该剥离，则导致装置的特性下降。
另一方面，在板电极5的下表面侧，也对应于在双面印刷基板1的上表面侧设置的位置而设置阻焊层6。通过在板电极5的下表面侧也设置阻焊层6，从而进一步提高上述的剥离抑制效果。设置在板电极5下表面侧的阻焊层6，不设置在后续工序中进行冲裁加工的部分。
接着，如图3所示，通过铣削或激光加工而去除在后续工序中进行冲裁加工及压花加工的部分的环氧片3。
接着，如图4所示，通过冲裁加工去除用于确认焊脚的部分。然后，形成开口部23。
接着，如图5所示，对与后述的功率用半导体装置12接合的接合部26进行压花加工。通过该压花加工，与功率用半导体装置12接合的接合部26的板电极5成为向下表面侧凹陷的形状（朝向功率用半导体装置12侧的凸形状）。例如在专利文献2中公开有压花加工。通过对露出的板电极5进行压花加工，从而提高与功率用半导体装置12电连接的可靠度。
经过上述的制造工序，能够实现基板一体型电极10，该基板一体型电极10构成为经由环氧片而将对功率用半导体装置12的MOSFET或IGBT进行栅极驱动的现有控制基板和流过主电流的板电极一体化。
<半导体装置的结构>
图6是本发明的本实施方式涉及的半导体装置100的俯视图。另外，图7是本发明的本实施方式涉及的半导体装置100的剖视图。
如图7所示，在由铜或AlSiC等热导率较高的金属制作的基底板16的上方形成有绝缘层15，并且在绝缘层15上配置有散热片14。
在散热片14上经由焊料等接合材料24而将多个功率用半导体装置12进行芯片接合（die bond）。另外，以跨在多个功率用半导体装置12上的方式配置有基板一体型电极10（参照图1～5）。基板一体型电极10还延伸至散热片14上。功率用半导体装置12和基板一体型电极10在接合部26等处，经由焊料或银等接合材料24电连接。通过在功率用半导体装置12的上表面侧、即阴极侧配置基板一体型电极10，从而能够利用厚度更薄的绝缘层15提高装置的耐压性，能够降低材料费。如果具有厚度与比主电压充分小的控制电压、例如栅极电极±15V左右的电位差相对应的绝缘层15，则能够充分满足所要求的性能，还能够通过减小厚度而削减成本。
在这里，在基板一体型电极10的与功率用半导体装置12接合的接合部26的周边部设置有开口部23，从而容易通过目视确认功率用半导体装置12和基板一体型电极10之间的电连接是否适当。因此，易于确保半导体装置100的品质。但是，开口部23并不是必需的结构，也可以假想后述的如图30及图31所示的没有设置开口部23的半导体装置101。
基板一体型电极10和功率用半导体装置12（MOSFET或IGBT）通过铝导线13等导体而电连接。具体而言，基板一体型电极10和功率用半导体装置12的栅极焊盘或发射极（源极）焊盘电连接。由此，能够经由基板一体型电极10及控制端子21，从外部对功率用半导体装置12进行控制。此外，控制端子21在基板一体型电极10上表面侧电连接。
另外，如图6所示，电极块18经由接合材料而配置在散热片14上。另外，电极块18也经由接合材料配置在延伸至散热片14上而配置的基板一体型电极10上。
而且，装置整体以使电极块18露出的方式，由模塑树脂17包覆，在模塑树脂17上表面露出的电极块18分别与阳极端子19及阴极端子20进行US（Ultra Sonic）接合。这样，形成与驱动装置的母线杆连接的半导体装置。
<半导体装置的制造方法1>
图8～图17是表示本发明的本实施方式涉及的半导体装置100的制造工序的图。
首先，如图8及图9所示，在散热片14上经由接合材料24配置多个功率用半导体装置12。
接着，如图10及图11所示，配置基板一体型电极10，其中，该基板一体型电极10跨在多个功率用半导体装置12上，经由接合材料24而与功率用半导体装置12电连接。该连接在接合部26等处进行。基板一体型电极10还延伸至散热片14上。
另外，将电极块18经由接合材料配置在散热片14上。而且，电极块18还经由接合材料配置在延伸至散热片14上而配置的基板一体型电极10上。
另外，将控制端子21在基板一体型电极10上表面侧进行电连接。
接着，如图12及图13所示，在散热片14的下表面侧形成绝缘层15，然后在绝缘层15的下表面侧设置基底板16。
另外，配置铝导线13，将基板一体型电极10和功率用半导体装置12电连接。具体而言，铝导线13将基板一体型电极10和功率用半导体装置12的栅极焊盘或发射极（源极）焊盘电连接。
接着，如图14及图15所示，设置模塑树脂17并由模塑树脂17以使电极块18露出的方式包覆装置整体。
接着，如图16及图17所示，将在模塑树脂17上表面露出的电极块18分别与阳极端子19及阴极端子20进行US（Ultra Sonic）接合。这样，形成与驱动装置的母线杆连接的半导体装置。
<半导体装置的制造方法2>
图18～图29是表示本发明的本实施方式涉及的半导体装置100的制造工序的其他方式的图。在以下的说明中，对与上述半导体装置的制造方法1不同的工序进行说明，而对于与半导体装置的制造方法1相同的工序，省略其说明。
如图18及图19所示，在散热片14上经由接合材料24配置多个功率用半导体装置12后，如图20及图21所示配置板电极5，该板电极5跨在功率用半导体装置12上，经由接合材料24与功率用半导体装置12电连接。该连接在接合部26等处进行。板电极5还延伸至散热片14上。
接着，如图22及图23所示，通过在板电极5上经由环氧片3配置双面印刷基板1等而形成基板一体型电极10。另外，将电极块18经由接合材料而配置在散热片14上以及延伸至散热片14上而配置的基板一体型电极10上。
另外，将控制端子21在基板一体型电极10上表面进行电连接。
以下的工序（图24～图29）与半导体装置的制造方法1相同。
如上所述，在板电极5上配置双面印刷基板1等的情况下，作为配置方法，可以想到例如将双面印刷基板1利用焊料等接合而配置的方法、和将双面印刷基板1利用双面粘接带等粘接而配置的方法。
但是，在将双面印刷基板1利用焊料等接合而配置的情况下，考虑到散热片14和功率用半导体装置12的接合也使用焊料等，因此，需要进行2次回流焊而导致加工费增加。另外，在功率用半导体装置12上表面实施焊料接合的情况下，有时从该接合面突出的焊料变为球状，附着在功率用半导体装置12的表面上。
另一方面，在将双面印刷基板1利用双面粘接带等粘接而配置的情况下，为了使双面印刷基板1和功率用半导体装置12电连接，需要通过US接合进行导线接合。但是，有时会由于在双面印刷基板1和板电极5之间不能得到与双面印刷基板1进行导线接合所需的强度，因此不能确保导线接合的可靠性。另外，粘接带的保管及粘接作业并不容易，有时导致加工费增加。
<前提技术>
图32是本发明的前提技术涉及的半导体装置102的俯视图。另外，图33是本发明的前提技术涉及的半导体装置101的剖视图。
如图32及图33所示，在将基板22配置在散热片14上的情况下，功率用半导体装置12（MOS或IGBT）只能搭载4个芯片，但在本发明中能够搭载6个芯片，实现高密度安装。
在本实施方式中，通过将图32及图33中的基板22和板电极25一体化，从而能够如图8～图19所示，实现工艺简化，并且，实现容易进行本发明的基板上和功率用半导体装置12的导线接合的基板一体型电极10。
<变形例>
图30是本发明的本实施方式涉及的变形例即半导体装置101的俯视图。另外，图31是本发明的本实施方式涉及的变形例即半导体装置101的剖视图。
在图30及图31所示的半导体装置101中，在这里，在基板一体型电极10A的与功率用半导体装置12接合的接合部分的周边部没有设置开口部23。其他结构与半导体装置100相同，因此省略详细的说明。
<效果>
根据本发明涉及的实施方式，半导体装置具有：板状的电极部件即板电极5；设置在板电极5上的作为一体化绝缘片的环氧片3；以及设置在环氧片3上的作为控制基板的双面印刷基板1，半导体装置具有将板电极5和双面印刷基板1通过环氧片3形成为一体的基板一体型电极10。
根据上述结构，通过具有经由环氧片3将板电极5和双面印刷基板1形成为一体的基板一体型电极10，从而能够扩大元件搭载区域而实现大容量化，并且，能够容易地制造。能够简化制造工序，从而还能够抑制制造成本。
另外，根据本发明涉及的实施方式，双面印刷基板1在其两个表面具有控制电路图案2。另外，半导体装置具有作为上表面阻绝（resist）层的阻焊层6，该阻焊层6设置在双面印刷基板1上表面，覆盖控制电路图案2。
根据上述结构，能够抑制下述情况，即，在通过传递模塑成型设置模塑树脂17时的热循环中，由于模塑树脂17的线膨胀系数、控制电路图案2的材料即Cu材料的线膨胀系数、及环氧片3的材料即环氧树脂材料的线膨胀系数之间的差异而产生应力，导致模塑树脂17剥离。
另外，根据本发明涉及的实施方式，环氧片3在其表面或内部具有板状或网格状的作为金属屏蔽层的屏蔽体4。
根据上述结构，能够抑制SiC设备等中在进行高频切换时可能产生的噪声。
另外，根据本发明涉及的实施方式，基板一体型电极10与作为半导体元件的功率用半导体装置12接合，在该接合部分的周边形成有开口部23。
根据上述结构，通过将功率用半导体装置12和基板一体型电极10接合的部分的周围设为开口部23，从而能够通过目视检查容易地确认该接合部分的导通状态等，能够提高半导体装置的可靠性。
另外，根据本发明涉及的实施方式，基板一体型电极10与功率用半导体装置12接合，在该接合的接合部26处朝向功率用半导体装置12侧形成有凸形状。
根据上述结构，通过对露出的板电极5进行压花加工，从而提高与功率用半导体装置12电连接的可靠度。另外，通过压花加工而形成该形状，从而能够容易地确保功率用半导体装置12和板电极5之间的用于缓和电场影响的间隙，与通过弯曲加工形成凸形状的情况相比，还能够实现装置的高密度化。
另外，根据本发明涉及的实施方式，半导体装置的制造方法具有：（a）在板状的电极部件即板电极5上设置作为一体化绝缘片的环氧片3的工序；（b）在环氧片3上设置作为控制基板的双面印刷基板1，将板电极5和双面印刷基板1经由环氧片3形成为一体的工序；以及（c）将在工序（b）中形成为一体而得到的基板一体型电极10与作为半导体元件的功率用半导体装置12电连接的工序。
根据上述结构，将形成为一体的状态的基板一体型电极10与功率用半导体装置12连接，因此，该连接作业变得容易，能够简化半导体装置的制造工序。
另外，根据本发明涉及的实施方式，半导体装置的制造方法具有（d）在工序（c）之前，在基板一体型电极10的与功率用半导体装置12接合的周边形成开口部23的工序。
根据上述结构，通过目视确认功率用半导体装置12和基板一体型电极10之间的电连接是否适当等变得容易。因此，易于确保半导体装置100的品质。
另外，根据本发明涉及的实施方式，半导体装置的制造方法具有（e）在工序（c）之前，在基板一体型电极10的与功率用半导体装置12接合的接合部26处，朝向功率用半导体装置12侧形成凸形状的工序。
根据上述结构，通过对露出的板电极5进行压花加工，从而提高与功率用半导体装置12电连接的可靠度。
另外，根据本发明涉及的实施方式，半导体装置的制造方法具有：（f）在工序（c）之前，在双面印刷基板1两个表面设置控制电路图案2的工序；以及（g）在双面印刷基板1的上表面设置对控制电路图案2进行覆盖的作为上表面阻绝层的阻焊层6的工序。
根据上述结构，能够抑制下述情况，即，在通过传递模塑成型设置模塑树脂17时的热循环中，由于模塑树脂17的线膨胀系数、控制电路图案2的材料即Cu材料的线膨胀系数、及环氧片3的材料即环氧树脂材料的线膨胀系数之间的差异而产生应力，导致模塑树脂17剥离。
在本发明的实施方式中，还记载了各结构要素的材质、材料、实施条件等，但这些均是示例，并不限定于所记载的内容。
此外，关于本发明，在其发明范围内能够对本实施方式中的任意的结构要素进行变形或省略。

Claims (13)

1.一种半导体装置，其具有：
板状的电极部件；
在所述电极部件上设置的一体化绝缘片；以及
在所述一体化绝缘片上设置的控制基板，
该半导体装置的特征在于，具有使所述电极部件和所述控制基板通过所述一体化绝缘片形成为一体的基板一体型电极，
所述基板一体型电极被用作与半导体元件电连接的电极。
2.根据权利要求1所述的半导体装置，其特征在于，
所述控制基板在其两个表面上具有电路图案，
该半导体装置还具有上表面阻绝层，该上表面阻绝层设置在所述控制基板上表面，对所述电路图案进行覆盖。
3.根据权利要求2所述的半导体装置，其特征在于，
该半导体装置还具有下表面阻绝层，该下表面阻绝层设置在与设有所述上表面阻绝层的位置对应的所述电极部件下表面。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述一体化绝缘片在其表面或内部具有板状或网格状的金属屏蔽层。
5.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
该半导体装置还具有半导体元件，该半导体元件与所述基板一体型电极电连接。
6.根据权利要求5所述的半导体装置，其特征在于，
所述基板一体型电极与所述半导体元件接合，在该接合的部分的周边形成有开口部。
7.根据权利要求5所述的半导体装置，其特征在于，
所述基板一体型电极与所述半导体元件接合，在该接合的接合部处朝向所述半导体元件侧形成有凸形状。
8.根据权利要求5所述的半导体装置，其特征在于，
所述基板一体型电极与所述半导体元件的阴极侧电连接。
9.一种半导体装置的制造方法，其特征在于，具有：
(a)在板状的电极部件上设置一体化绝缘片的工序；
(b)在所述一体化绝缘片上设置控制基板，将所述电极部件和所述控制基板经由所述一体化绝缘片形成为一体的工序；以及
(c)将在所述工序(b)中形成为一体而得到的基板一体型电极与半导体元件电连接的工序。
10.根据权利要求9所述的半导体装置的制造方法，其特征在于，
该半导体装置的制造方法还具有，(d)在所述工序(c)之前，在所述基板一体型电极的与所述半导体元件接合的周边形成开口部的工序。
11.根据权利要求9或10所述的半导体装置的制造方法，其特征在于，
该半导体装置的制造方法还具有，(e)在所述工序(c)之前，在所述基板一体型电极的与所述半导体元件接合的接合部处朝向所述半导体元件侧形成凸形状的工序。
12.根据权利要求9或10所述的半导体装置的制造方法，其特征在于，
该半导体装置的制造方法还具有：
(f)在所述工序(c)之前，在所述控制基板的两个表面上设置电路图案的工序；以及
(g)在所述控制基板上表面设置对所述电路图案进行覆盖的上表面阻绝层的工序。
13.根据权利要求12所述的半导体装置的制造方法，其特征在于，
该半导体装置的制造方法还具有，(h)在与所述工序(g)中设置的所述上表面阻绝层的位置对应的所述电极部件下表面，设置下表面阻绝层的工序。
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