CN103971590A - 一种防伪商标及其制造方法 - Google Patents
一种防伪商标及其制造方法 Download PDFInfo
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- CN103971590A CN103971590A CN201310041603.1A CN201310041603A CN103971590A CN 103971590 A CN103971590 A CN 103971590A CN 201310041603 A CN201310041603 A CN 201310041603A CN 103971590 A CN103971590 A CN 103971590A
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- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000007769 metal material Substances 0.000 claims abstract description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
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- 229910052719 titanium Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 9
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
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CN201310041603.1A CN103971590B (zh) | 2013-02-01 | 2013-02-01 | 一种防伪商标及其制造方法 |
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CN201310041603.1A CN103971590B (zh) | 2013-02-01 | 2013-02-01 | 一种防伪商标及其制造方法 |
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CN103971590A true CN103971590A (zh) | 2014-08-06 |
CN103971590B CN103971590B (zh) | 2017-02-22 |
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CN201310041603.1A Expired - Fee Related CN103971590B (zh) | 2013-02-01 | 2013-02-01 | 一种防伪商标及其制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108130510A (zh) * | 2017-11-23 | 2018-06-08 | 深圳市矩阵多元科技有限公司 | 一种防伪标签的制作方法及防伪标签 |
CN110288900A (zh) * | 2019-06-27 | 2019-09-27 | 福州大学 | 一种基于钙钛矿纳米片的防伪标签及其制备方法 |
Citations (25)
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JPH03171674A (ja) * | 1989-11-29 | 1991-07-25 | Nec Corp | 薄膜トランジスタおよびその製造方法 |
CN1076045A (zh) * | 1993-03-26 | 1993-09-08 | 中国科学院上海技术物理研究所 | 一种混合型防伪方法及其制品 |
CN2274363Y (zh) * | 1996-07-11 | 1998-02-11 | 南京科化显示器有限公司 | 隐形防伪标识显示膜 |
CN1219261A (zh) * | 1996-05-20 | 1999-06-09 | 美国3M公司 | 提示扰动的多层片材 |
JP2000113151A (ja) * | 1998-10-01 | 2000-04-21 | Tomoegawa Paper Co Ltd | ラベル状icカード |
CN1349204A (zh) * | 2000-10-12 | 2002-05-15 | 西安秦川三和信息工程发展有限公司 | 一种防伪标贴及方法 |
JP2002182570A (ja) * | 2000-12-16 | 2002-06-26 | Shin Aoyanagi | 半導体パッケージ基板の識別用ラベル体およびこれを用いた半導体パッケージ基板の識別方法 |
US20040164302A1 (en) * | 2003-02-24 | 2004-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
CN1653485A (zh) * | 2002-05-15 | 2005-08-10 | 琳得科株式会社 | 集成电路标签 |
CN1677632A (zh) * | 2004-03-31 | 2005-10-05 | 株式会社日立制作所 | 具有rfid标签或者放大电极的rfid芯片 |
CN1832169A (zh) * | 2005-03-08 | 2006-09-13 | 株式会社半导体能源研究所 | 无线芯片以及具有该无线芯片的电子设备 |
CN1867957A (zh) * | 2003-11-14 | 2006-11-22 | 纪和化学工业株式会社 | 安全标贴及其制造方法 |
CN1866321A (zh) * | 2005-05-17 | 2006-11-22 | 优泊公司 | 高亮度的标签、贴有该标签的容器、及其制造方法 |
US20070063058A1 (en) * | 2005-09-16 | 2007-03-22 | Lintec Corporation | IC tag, reader/writer for the IC tag and system using the IC tag |
CN101115627A (zh) * | 2005-02-10 | 2008-01-30 | Ovd基尼格拉姆股份公司 | 包括衍射浮雕结构的多层体及其制备方法 |
WO2009020348A1 (en) * | 2007-08-06 | 2009-02-12 | Youl Chon Chemical Co., Ltd. | Label and method for preparing the same |
CN101393794A (zh) * | 2007-09-20 | 2009-03-25 | 中国印钞造币总公司 | 磁性编码薄膜材料及其制备方法 |
CN101443832A (zh) * | 2006-05-16 | 2009-05-27 | 凸版印刷株式会社 | 防伪用ic标识 |
CN101673486A (zh) * | 2007-09-14 | 2010-03-17 | 栗村化学株式会社 | 具有全息图的标签及其制造方法 |
CN201833664U (zh) * | 2010-06-13 | 2011-05-18 | 武汉华工图像技术开发有限公司 | 具有全反和半反效果的综合防伪烫印膜 |
CN102395466A (zh) * | 2009-04-20 | 2012-03-28 | 东洋铝株式会社 | 层叠体、包装体、包装用片材、包装材料、标签和容器 |
CN102479468A (zh) * | 2010-11-24 | 2012-05-30 | 索尼公司 | 全息图层叠体及全息图层叠体制造方法 |
CN202422588U (zh) * | 2012-02-14 | 2012-09-05 | 四川大学 | 一种电致变色防伪标签 |
CN102696062A (zh) * | 2010-05-18 | 2012-09-26 | 韩国科学技术院 | 利用在多种基材上形成的微细颗粒的任意分散图案制备防伪标签及判别真伪的方法 |
CN102893314A (zh) * | 2011-04-22 | 2013-01-23 | 松下电器产业株式会社 | 信息记录介质用读取标签及其信息记录方法 |
-
2013
- 2013-02-01 CN CN201310041603.1A patent/CN103971590B/zh not_active Expired - Fee Related
Patent Citations (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH03171674A (ja) * | 1989-11-29 | 1991-07-25 | Nec Corp | 薄膜トランジスタおよびその製造方法 |
CN1076045A (zh) * | 1993-03-26 | 1993-09-08 | 中国科学院上海技术物理研究所 | 一种混合型防伪方法及其制品 |
CN1219261A (zh) * | 1996-05-20 | 1999-06-09 | 美国3M公司 | 提示扰动的多层片材 |
CN2274363Y (zh) * | 1996-07-11 | 1998-02-11 | 南京科化显示器有限公司 | 隐形防伪标识显示膜 |
JP2000113151A (ja) * | 1998-10-01 | 2000-04-21 | Tomoegawa Paper Co Ltd | ラベル状icカード |
CN1349204A (zh) * | 2000-10-12 | 2002-05-15 | 西安秦川三和信息工程发展有限公司 | 一种防伪标贴及方法 |
JP2002182570A (ja) * | 2000-12-16 | 2002-06-26 | Shin Aoyanagi | 半導体パッケージ基板の識別用ラベル体およびこれを用いた半導体パッケージ基板の識別方法 |
CN1653485A (zh) * | 2002-05-15 | 2005-08-10 | 琳得科株式会社 | 集成电路标签 |
US20040164302A1 (en) * | 2003-02-24 | 2004-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
CN1867957A (zh) * | 2003-11-14 | 2006-11-22 | 纪和化学工业株式会社 | 安全标贴及其制造方法 |
CN1677632A (zh) * | 2004-03-31 | 2005-10-05 | 株式会社日立制作所 | 具有rfid标签或者放大电极的rfid芯片 |
CN101115627A (zh) * | 2005-02-10 | 2008-01-30 | Ovd基尼格拉姆股份公司 | 包括衍射浮雕结构的多层体及其制备方法 |
CN1832169A (zh) * | 2005-03-08 | 2006-09-13 | 株式会社半导体能源研究所 | 无线芯片以及具有该无线芯片的电子设备 |
CN1866321A (zh) * | 2005-05-17 | 2006-11-22 | 优泊公司 | 高亮度的标签、贴有该标签的容器、及其制造方法 |
US20070063058A1 (en) * | 2005-09-16 | 2007-03-22 | Lintec Corporation | IC tag, reader/writer for the IC tag and system using the IC tag |
CN101443832A (zh) * | 2006-05-16 | 2009-05-27 | 凸版印刷株式会社 | 防伪用ic标识 |
WO2009020348A1 (en) * | 2007-08-06 | 2009-02-12 | Youl Chon Chemical Co., Ltd. | Label and method for preparing the same |
CN101673486A (zh) * | 2007-09-14 | 2010-03-17 | 栗村化学株式会社 | 具有全息图的标签及其制造方法 |
CN101393794A (zh) * | 2007-09-20 | 2009-03-25 | 中国印钞造币总公司 | 磁性编码薄膜材料及其制备方法 |
CN102395466A (zh) * | 2009-04-20 | 2012-03-28 | 东洋铝株式会社 | 层叠体、包装体、包装用片材、包装材料、标签和容器 |
CN102696062A (zh) * | 2010-05-18 | 2012-09-26 | 韩国科学技术院 | 利用在多种基材上形成的微细颗粒的任意分散图案制备防伪标签及判别真伪的方法 |
CN201833664U (zh) * | 2010-06-13 | 2011-05-18 | 武汉华工图像技术开发有限公司 | 具有全反和半反效果的综合防伪烫印膜 |
CN102479468A (zh) * | 2010-11-24 | 2012-05-30 | 索尼公司 | 全息图层叠体及全息图层叠体制造方法 |
CN102893314A (zh) * | 2011-04-22 | 2013-01-23 | 松下电器产业株式会社 | 信息记录介质用读取标签及其信息记录方法 |
CN202422588U (zh) * | 2012-02-14 | 2012-09-05 | 四川大学 | 一种电致变色防伪标签 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108130510A (zh) * | 2017-11-23 | 2018-06-08 | 深圳市矩阵多元科技有限公司 | 一种防伪标签的制作方法及防伪标签 |
CN110288900A (zh) * | 2019-06-27 | 2019-09-27 | 福州大学 | 一种基于钙钛矿纳米片的防伪标签及其制备方法 |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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Granted publication date: 20170222 |