CN103969565B - 半导体评价装置及半导体评价方法 - Google Patents

半导体评价装置及半导体评价方法 Download PDF

Info

Publication number
CN103969565B
CN103969565B CN201410042200.3A CN201410042200A CN103969565B CN 103969565 B CN103969565 B CN 103969565B CN 201410042200 A CN201410042200 A CN 201410042200A CN 103969565 B CN103969565 B CN 103969565B
Authority
CN
China
Prior art keywords
fluid
unit
quasiconductor
determinand
evaluating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410042200.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103969565A (zh
Inventor
秋山肇
冈田章
山下钦也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN103969565A publication Critical patent/CN103969565A/zh
Application granted granted Critical
Publication of CN103969565B publication Critical patent/CN103969565B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
CN201410042200.3A 2013-01-28 2014-01-28 半导体评价装置及半导体评价方法 Expired - Fee Related CN103969565B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013013046A JP6084469B2 (ja) 2013-01-28 2013-01-28 半導体評価装置および半導体評価方法
JP2013-013046 2013-01-28

Publications (2)

Publication Number Publication Date
CN103969565A CN103969565A (zh) 2014-08-06
CN103969565B true CN103969565B (zh) 2016-12-07

Family

ID=51222223

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410042200.3A Expired - Fee Related CN103969565B (zh) 2013-01-28 2014-01-28 半导体评价装置及半导体评价方法

Country Status (3)

Country Link
US (1) US9335371B2 (https=)
JP (1) JP6084469B2 (https=)
CN (1) CN103969565B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6218718B2 (ja) * 2014-10-22 2017-10-25 三菱電機株式会社 半導体評価装置及びその評価方法
WO2016117105A1 (ja) * 2015-01-23 2016-07-28 三菱電機株式会社 半導体装置評価用治具、半導体装置評価装置および半導体装置評価方法
JP6386923B2 (ja) * 2015-01-26 2018-09-05 三菱電機株式会社 半導体評価装置およびチャックステージの検査方法
TWI530700B (zh) 2015-03-11 2016-04-21 旺矽科技股份有限公司 測試機台及其操作方法
JP2017009449A (ja) * 2015-06-23 2017-01-12 三菱電機株式会社 コンタクトプローブ型温度検出器、半導体装置の評価装置および半導体装置の評価方法
JP6504971B2 (ja) * 2015-08-20 2019-04-24 三菱電機株式会社 半導体チップテスト装置および半導体チップテスト方法
JP6418118B2 (ja) * 2015-09-24 2018-11-07 三菱電機株式会社 半導体装置の評価装置及び評価方法
JP6478891B2 (ja) 2015-10-07 2019-03-06 三菱電機株式会社 プローブ位置検査装置
JP6515819B2 (ja) * 2016-01-08 2019-05-22 三菱電機株式会社 評価装置、プローブ位置の検査方法
JP2017129395A (ja) * 2016-01-19 2017-07-27 三菱電機株式会社 半導体装置の検査装置および半導体装置の検査方法
JP6593251B2 (ja) 2016-05-19 2019-10-23 三菱電機株式会社 半導体検査装置
JP6562896B2 (ja) * 2016-12-22 2019-08-21 三菱電機株式会社 半導体装置の評価装置およびそれを用いた半導体装置の評価方法
JP6739326B2 (ja) * 2016-12-27 2020-08-12 三菱電機株式会社 評価装置及び評価方法
CN108535620A (zh) * 2017-03-02 2018-09-14 叶秀慧 应用静电载具测试半导体制品的机构
JP6822991B2 (ja) * 2018-02-20 2021-01-27 株式会社東芝 可動端子装置と可動端子の出力を検出する装置
US11378619B2 (en) * 2019-12-18 2022-07-05 Formfactor, Inc. Double-sided probe systems with thermal control systems and related methods
CN114563677B (zh) * 2022-03-01 2025-06-17 扬州扬杰电子科技股份有限公司 贴片二极管全自动检测装置
JP7843724B2 (ja) 2023-03-02 2026-04-10 三菱電機株式会社 半導体試験装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6248169B1 (en) * 1999-06-01 2001-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Dual-cup coating apparatus
US6741445B1 (en) * 2002-01-16 2004-05-25 Advanced Micro Devices, Inc. Method and system to monitor and control electro-static discharge
CN1536636A (zh) * 2003-04-08 2004-10-13 力晶半导体股份有限公司 晶圆表面离子取样系统及方法
CN101113957A (zh) * 2006-07-27 2008-01-30 奥林巴斯株式会社 基板检查装置及基板检查装置使用的灯单元

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6165174A (ja) * 1984-09-06 1986-04-03 Hitachi Electronics Eng Co Ltd 電子部品加熱装置
JPH0322454A (ja) * 1989-06-19 1991-01-30 Nec Corp 半導体検査装置
JP2969086B2 (ja) 1996-09-25 1999-11-02 中日本電子株式会社 大電流用小型接触子
JP3071155B2 (ja) * 1997-05-16 2000-07-31 ユーエイチティー株式会社 Ｂ・ｇ・ａ、ｐ・ｇ・ａ等のｉｃパッケージ用の基板の導通検査方法及びその装置
JP3979737B2 (ja) * 1998-11-25 2007-09-19 宮崎沖電気株式会社 電気的特性測定用装置および電気的特性測定方法
JP2002022770A (ja) * 2000-07-07 2002-01-23 Micronics Japan Co Ltd プローブカード
JP2003130889A (ja) * 2001-10-29 2003-05-08 Vector Semicon Kk 半導体装置検査装置及び検査方法
JP2004111442A (ja) * 2002-09-13 2004-04-08 Fujitsu Ltd 半導体検査装置
US20050000549A1 (en) * 2003-07-03 2005-01-06 Oikari James R. Wafer processing using gaseous antistatic agent during drying phase to control charge build-up
JP2005030829A (ja) * 2003-07-09 2005-02-03 Seiko Epson Corp プッシャおよび半導体装置の特性検査装置
JP2006337359A (ja) * 2005-05-02 2006-12-14 Daytona Control Co Ltd 温度制御装置
DE102006018474A1 (de) * 2006-04-19 2007-10-25 Infineon Technologies Ag Testvorrichtung für Halbleiterelemente auf einem Halbleiterwafer sowie ein Testverfahren unter Verwendung der Testvorrichtung
WO2009060898A1 (ja) * 2007-11-07 2009-05-14 Fuence Co., Ltd. 固定化装置
JP5375745B2 (ja) * 2010-06-02 2013-12-25 富士電機株式会社 試験装置および試験方法
US8941390B2 (en) * 2012-03-01 2015-01-27 Neuronexus Technologies, Inc. System and method for testing electrical circuits using a photoelectrochemical effect

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6248169B1 (en) * 1999-06-01 2001-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Dual-cup coating apparatus
US6741445B1 (en) * 2002-01-16 2004-05-25 Advanced Micro Devices, Inc. Method and system to monitor and control electro-static discharge
CN1536636A (zh) * 2003-04-08 2004-10-13 力晶半导体股份有限公司 晶圆表面离子取样系统及方法
CN101113957A (zh) * 2006-07-27 2008-01-30 奥林巴斯株式会社 基板检查装置及基板检查装置使用的灯单元

Also Published As

Publication number Publication date
CN103969565A (zh) 2014-08-06
JP2014145615A (ja) 2014-08-14
US9335371B2 (en) 2016-05-10
US20140210500A1 (en) 2014-07-31
JP6084469B2 (ja) 2017-02-22

Similar Documents

Publication Publication Date Title
CN103969565B (zh) 半导体评价装置及半导体评价方法
CN104597384B (zh) 半导体评价装置
JP5432700B2 (ja) 半導体デバイスの検査装置
CN106935524B (zh) 探针卡和晶圆测试系统及晶圆测试方法
CN108254667B (zh) 评价装置及评价方法
JP5016892B2 (ja) 検査装置及び検査方法
CN101221212A (zh) 检查方法、检查装置及存储了程序的计算机可读存储介质
CN107037346A (zh) 半导体装置的评价装置及评价方法
JP2017098289A (ja) 半導体装置の評価装置および半導体装置の評価方法
JP2018146444A (ja) プローバ
JP2013120887A (ja) 半導体試験装置および半導体試験方法
CN108231618B (zh) 半导体装置的评价装置及使用了该评价装置的半导体装置的评价方法
TWI887258B (zh) 檢查裝置
TW201335047A (zh) 電子零件搬送裝置
JP6686825B2 (ja) 評価装置、半導体装置の評価方法
JP2009111246A (ja) 半導体装置の検査装置および半導体装置の製造方法
US9684015B2 (en) Measuring apparatus and measuring method utilizing insulating liquid
US9535114B2 (en) Testing device
KR101854063B1 (ko) 반도체 장치, 및 그 시험 방법
JP6731862B2 (ja) 半導体装置の評価装置
JP6804414B2 (ja) 半導体装置用評価装置および半導体装置の評価方法
US10192797B2 (en) Semiconductor device and electrical contact structure thereof
JP6201383B2 (ja) 半導体測定方法
JP2014013156A (ja) 検査装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161207