CN103966555B - 蒸镀源加热装置 - Google Patents

蒸镀源加热装置 Download PDF

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CN103966555B
CN103966555B CN201410231511.4A CN201410231511A CN103966555B CN 103966555 B CN103966555 B CN 103966555B CN 201410231511 A CN201410231511 A CN 201410231511A CN 103966555 B CN103966555 B CN 103966555B
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heating unit
metal cylinder
vapor deposition
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CN103966555A (zh
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邹清华
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0209Pretreatment of the material to be coated by heating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

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  • Chemical & Material Sciences (AREA)
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  • Engineering & Computer Science (AREA)
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  • Physical Vapour Deposition (AREA)

Abstract

本发明提供一种蒸镀源加热装置,包括:底座、连接于底座的外壳、设于外壳内侧的加热元件、设于加热元件内侧且安装于底座上的数个金属筒、及设于金属筒内的坩埚。本发明的蒸镀源加热装置,在加热元件与坩埚之间设置数个金属筒,所述数个金属筒安装于底座上,加热时,通过数个金属筒逐渐传导加热元件的热量的方式,将热量传导给坩埚,由于金属筒导热性能好,其上热量分布均匀,使得坩埚受热均匀,保证了蒸镀效果。

Description

蒸镀源加热装置
技术领域
本发明涉及有机电致发光器件制作领域,尤其涉及一种蒸镀源加热装置。
背景技术
有机电致发光器件是一种自发光器件,具有电压低,视角宽、响应速度快、温度适应性好等优势,被认为在平板显示中有着巨大的应用前景,甚至被认为是继等离子(PDP)、液晶(LCD)之后的新一代平板显示技术。
从使用的有机电致发光材料的分子量来看,有机电致发光器件分为小分子有机电致发光器件(OLED)与高分子电致发光器件(PLED),由于分子量的不同,两种有机电致发光器件的制程也有很大的区别,OLED主要通过热蒸镀方式制备,PLED通过旋涂或者喷墨打印方式制备。
OLED通常包括:基板、置于基板上的ITO透明阳极、置于ITO透明阳极上的空穴注入层(HIL)、置于空穴注入层上的空穴传输层(HTL)、置于空穴传输层上的发光层(EML)、置于发光层上的电子传输层(ETL)、置于电子传输层上的电子注入层(EIL)以及置于电子注入层上的阴极。为了提高效率,发光层通常采用主/客体掺杂系统。
OLED制程采用的热蒸镀方式,在真空环境下(E-5Pa)加热有机材料,使升华型或者熔融型的有机材料在高温状态下气化,沉积在有TFT结构或者阳极结构的基板上。目前主流的蒸镀源主要有点型蒸镀源和线型蒸镀源。点型蒸镀源主要用在实验线和早期的量产线,由于线型蒸镀源的材料利用率和膜厚均一性要优于点型蒸镀源,近期建设的量产线大部分使用线性蒸镀源。但由于点型蒸镀源的空间小,一个镀膜腔体里可以安装很多个点型蒸镀源,可以填入很多种材料,适用于实验线。
有机材料的蒸发温度与其裂解温度相差很小,点型蒸镀源的坩埚内部往往温差较大(上热下冷),若材料填入量较多,材料无法达到一个热平衡稳定的状态,蒸镀速率无法稳定;提高温度,使材料热稳定,往往上面的材料有裂解的风险。若材料填入量较少,在高蒸镀速率下,坩埚上部的温度往往超过材料的裂解温度,气化的材料在经过此段区域时容易裂解。
发明内容
本发明的目的在于提供一种蒸镀源加热装置,在加热元件与坩埚之间设置数个金属筒,通过数个金属筒逐渐传导加热元件的热量的方式,使得坩埚受热均匀,保证了蒸镀效果。
为实现上述目的,本发明提供一种蒸镀源加热装置,包括:底座、连接于底座的外壳、设于外壳内侧的加热元件、设于加热元件内侧且安装于底座上的数个金属筒、及设于金属筒内的坩埚。
所述底座容纳于外壳内,所述底座设有数个凹槽,所述数个金属筒分别安装于该数个凹槽上。
所述金属筒为圆筒,所述凹槽为圆环状凹槽。
所述圆形环状凹槽同心。
所述金属筒的高度等于或低于所述外壳的高度。
所述底座由金属或绝热陶瓷制成。
所述金属筒由金属片制成。
所述金属片的厚度为0.01mm~10cm。
所述金属片的材质为铝、铝合金、钛、钛合金、或者其他导热系数良好的金属。
所述加热元件为加热电阻丝。
本发明的有益效果:本发明的蒸镀源加热装置,在加热元件与坩埚之间设置数个金属筒,所述数个金属筒安装于底座上,加热时,通过数个金属筒逐渐传导加热元件的热量的方式,将热量传导给坩埚,由于金属筒导热性能好,其上热量分布均匀,使得坩埚受热均匀,保证了蒸镀效果;同时可以根据需要增加或减少金属筒的个数,以调节金属筒对温度的传递和均衡作用,进而调节坩埚的温度差。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为本发明蒸镀源加热装置一实施例的立体示意图;
图2为图1所示蒸镀源加热装置的剖视示意图;
图3为图1所示蒸镀源加热装置的底座的俯视图;
图4为图1所示蒸镀源加热装置的底座的立体图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1-4,本发明提供一种蒸镀源加热装置10,包括底座20、连接于底座20上的外壳80、设于外壳80内侧的加热元件60、设于加热元件60内侧且安装于底座20上的数个金属筒40、及设于金属筒40内的坩埚90。所述底座20容纳于外壳80内,所述底座20设有数个同心圆环状凹槽21,所述金属筒40为圆筒,所述数个金属筒40分别安装于该数个凹槽21上。所述加热元件60为加热电阻丝。
在本实施例中,所述底座20具有四个同心圆环状凹槽21,由外至内分别为21a,21b,21c,21d。所述数个金属筒40为三个,分别为第一层(最外层)金属筒40a,第二层(中间层)金属筒40b,与第三层(最内层)金属筒40c,所述第一层金属筒40a,第二层金属筒40b,与第三层金属筒40c分别安装于凹槽21a,21b与21c上,所述坩埚90设置于第三层金属筒40c中心,且安装于所述底座20上最内层的凹槽21d上。同时,本发明可根据需要调整底座20上凹槽21的数量,以及底座20上安装的金属筒40的数量,以实现对所述蒸镀源加热装置10内的坩埚90最佳的加热效果。
当加热元件60开始加热时,热量通过第一层金属圆筒40a逐步向内传导至第二层金属圆筒40b与第三层金属筒40c,然而再传导给坩埚90,实现对坩埚90进行加热。真空状态下,蒸镀源加热装置10中加热元件60发出的热量会以热辐射的方式加热金属筒40,由于加热元件60的不同位置发出的热量可能不同,因此,第一层金属筒40a上存在温差,由于金属能很好地传导热量,第一层金属筒40a在向第二层金属筒40b辐射热量的同时,其高温部位的热量会传导至其低温部位,从而使得第一层金属筒40a上不同位置的温差变小,进而第二层金属筒40b的温差会变的更小,而第三层金属筒40C的温差则基本为0,因此,热量传递到内部的坩埚90时,所述坩埚90不同位置可以获得无温差的热量,从而使坩埚90受热均匀。也就是,通过金属筒40的设置将加热元件60的不均匀发热转换成均匀发热传递给坩埚90,从而实现坩埚90内部没有温差。
所述金属筒40的高度可以等于或低于所述外壳80的高度,使金属筒40不伸出外壳80。本实施例中,所述第一层金属筒40a的高度高于坩埚90的高度,所述第二层金属筒40b的高度低于所述第一层金属筒40a的高度,所述第三层金属筒40c的高度低于所述第二层金属筒40b的高度,且等于坩埚90的高度。而做为可选择的变化,所述金属筒40的高度与坩埚90的高度相同或接近都可以。所述底座20上的凹槽21以及安装于所述凹槽21的金属筒40的数量可根据加热效果的需要进行增加或减少。
所述底座20可以由金属,绝热陶瓷或者其他材料制成。
所述金属筒40由金属片制成,所述金属片的厚度为0.01mm~10cm;所述金属片的材质可以是铝,铝合金,钛,钛合金,或其他导热系数良好的金属。
综上所述,本发明的蒸镀源加热装置,在加热元件与坩埚之间设置数个金属筒,所述数个金属筒安装于底座上,加热时,通过数个金属筒逐渐传导加热元件的热量的方式,将热量传导给坩埚,由于金属筒导热性能好,其上热量分布均匀,使得坩埚受热均匀,保证了蒸镀效果;同时可以根据需要增加或减少金属筒的个数,以调节金属筒对温度的传递和均衡作用,进而调节坩埚的温度差。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种蒸镀源加热装置,其特征在于,包括:底座(20)、连接于底座的外壳(80)、设于外壳内侧的加热元件(60)、设于加热元件(60)内侧且安装于底座(20)上的数个金属筒(40)、及设于金属筒(40)内的坩埚(90);
所述金属筒(40)由金属片制成;
所述金属片的厚度为0.01mm~10cm。
2.如权利要求1所述的蒸镀源加热装置,其特征在于,所述底座(20)容纳于外壳(80)内,所述底座(20)设有数个凹槽(21),所述数个金属筒(40)分别安装于该数个凹槽(21)上。
3.如权利要求2所述的蒸镀源加热装置,其特征在于,所述金属筒(40)为圆筒,所述凹槽为圆环状凹槽。
4.如权利要求3所述的蒸镀源加热装置,其特征在于,所述圆环状凹槽同心。
5.如权利要求1所述的蒸镀源加热装置,其特征在于,所述金属筒(40)的高度等于或低于所述外壳(80)的高度。
6.如权利要求1所述的蒸镀源加热装置,其特征在于,所述底座(20)由金属或绝热陶瓷制成。
7.如权利要求1所述的蒸镀源加热装置,其特征在于,所述金属片的材质为铝、铝合金、钛、钛合金、或者其他导热系数良好的金属。
8.如权利要求1所述的蒸镀源加热装置,其特征在于,所述加热元件(60)为加热电阻丝。
CN201410231511.4A 2014-05-28 2014-05-28 蒸镀源加热装置 Expired - Fee Related CN103966555B (zh)

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CN201410231511.4A CN103966555B (zh) 2014-05-28 2014-05-28 蒸镀源加热装置
PCT/CN2014/079709 WO2015180210A1 (zh) 2014-05-28 2014-06-12 蒸镀源加热装置
US14/381,201 US20160230272A1 (en) 2014-05-28 2014-06-12 Evaporation source heating device

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