WO2015180210A1 - 蒸镀源加热装置 - Google Patents

蒸镀源加热装置 Download PDF

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Publication number
WO2015180210A1
WO2015180210A1 PCT/CN2014/079709 CN2014079709W WO2015180210A1 WO 2015180210 A1 WO2015180210 A1 WO 2015180210A1 CN 2014079709 W CN2014079709 W CN 2014079709W WO 2015180210 A1 WO2015180210 A1 WO 2015180210A1
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WO
WIPO (PCT)
Prior art keywords
metal
base
heating device
evaporation source
heating element
Prior art date
Application number
PCT/CN2014/079709
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English (en)
French (fr)
Inventor
邹清华
Original Assignee
深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US14/381,201 priority Critical patent/US20160230272A1/en
Publication of WO2015180210A1 publication Critical patent/WO2015180210A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

Definitions

  • the invention relates to the field of manufacturing organic electroluminescent devices, in particular to an evaporation source heating device.
  • the organic electroluminescent device is a self-luminous device with advantages of low voltage, wide viewing angle, fast response, and good temperature adaptability. It is considered to have great application prospects in flat panel display, and is even considered to be a plasma (PDP). ), a new generation of flat panel display technology after liquid crystal (LCD).
  • PDP plasma
  • LCD liquid crystal
  • the organic electroluminescent device is classified into a small molecule organic electroluminescent device (OLED) and a polymer electroluminescent device (PLED), and two kinds of organic electricity are different due to different molecular weights.
  • OLED organic electroluminescent device
  • PLED polymer electroluminescent device
  • the process of the electroluminescent device is also very different.
  • the OLED is mainly prepared by thermal evaporation
  • the PLED is prepared by spin coating or inkjet printing.
  • the OLED generally includes a substrate, an ITO transparent anode disposed on the substrate, a hole injection layer (HIL) disposed on the ITO transparent anode, a hole transport layer (HTL) disposed on the hole injection layer, and a hole.
  • EML emissive layer
  • ETL electron transport layer
  • EIL electron injection layer
  • the luminescent layer usually uses a host/guest doping system.
  • the OLED process adopts a thermal evaporation method in which an organic material is heated in a vacuum environment ( 5 Pa) to vaporize a sublimation type or a molten type organic material at a high temperature, and is deposited on a substrate having a TFT structure or an anode structure.
  • the mainstream evaporation sources are mainly a type of vapor deposition source and a linear evaporation source.
  • the point type evaporation source is mainly used in the experimental line and the early production line. Since the material utilization rate and film thickness uniformity of the linear evaporation source are superior to the point type evaporation source, most of the recently constructed mass production lines are used.
  • Linear evaporation source due to the small space of the point-type evaporation source, a plurality of point-type evaporation sources can be installed in one coating chamber, and a variety of materials can be filled, which is suitable for the experimental line.
  • the evaporating temperature of the organic material is very different from the cracking temperature.
  • the inside of the tantalum vapor deposition source tends to have a large temperature difference (upper heat and cold). If the material is filled in a large amount, the material cannot reach a state of stable heat balance, and evaporating. The rate cannot be stabilized; the temperature is raised to make the material thermally stable, and often the material above is at risk of cracking. If the amount of material to be filled is small, at high evaporation rates, the temperature at the top of the crucible tends to exceed the cracking temperature of the material, and the vaporized material is susceptible to cracking as it passes through this region. Summary of the invention
  • An object of the present invention is to provide an evaporation source heating device, in which a plurality of metal cylinders are arranged between a heating element and a crucible, and the heat of the heating element is gradually transmitted through a plurality of metal cylinders, so that the ⁇ Ganzi is heated uniformly, thereby ensuring Evaporation effect.
  • the present invention provides a vapor deposition source heating device, comprising: a base, an outer casing connected to the base, a heating element disposed inside the outer casing, and a plurality of metal cylinders disposed on the inner side of the heating element and mounted on the base; And the crucible provided in the metal cylinder.
  • the base is housed in a casing, and the base is provided with a plurality of grooves, and the plurality of metal cylinders are respectively mounted on the plurality of grooves.
  • the metal cylinder is a cylinder, and the groove is an annular groove.
  • the circular annular grooves are concentric.
  • the height of the metal cylinder is equal to or higher than the height of the outer casing.
  • the base is made of metal or adiabatic ceramic.
  • the metal cylinder is made of a metal sheet.
  • the metal piece has a thickness of 0.01 mm to 10 cm.
  • the metal sheet is made of aluminum, aluminum alloy, titanium, titanium alloy, or other metal having good thermal conductivity.
  • the heating element is a heating resistor wire.
  • the present invention also provides an evaporation source heating device, comprising: a base, an outer casing connected to the base, a heating element disposed inside the outer casing, a plurality of metal cylinders disposed on the inner side of the heating element and mounted on the base, and being disposed on the metal ⁇ inside the barrel;
  • the base is housed in a casing, and the base is provided with a plurality of [ ⁇ ] slots, and the plurality of metal cylinders are respectively mounted on the plurality of grooves;
  • the metal cylinder is a cylinder, and the groove is an annular groove
  • the height of the metal cylinder is equal to or higher than the height of the outer casing
  • the base is made of metal or adiabatic ceramic
  • the metal cylinder is made of a metal sheet
  • the thickness of the metal piece is 0.01 mm to 10 cm;
  • the metal sheet is made of aluminum, aluminum alloy, titanium, titanium alloy, or other metal having good thermal conductivity;
  • the heating element is a heating resistance wire.
  • a plurality of metal cylinders are disposed between the heating element and the crucible, and the plurality of metal cylinders are mounted on the base, and when heated, the heating is performed through a plurality of metal cylinders.
  • the heat of the component conducts heat to the crucible. Because the thermal conductivity of the metal cylinder is good, the heat distribution on the metal is uniform, so that the crucible is evenly heated, and the evaporation effect is ensured. At the same time, the number of metal cylinders can be increased or decreased as needed. Adjust the temperature transfer and equalization of the metal cylinder to adjust the temperature difference of the crucible.
  • FIG. 1 is a perspective view of an embodiment of an evaporation source heating device of the present invention
  • Figure 2 is a schematic cross-sectional view of the evaporation source heating device shown in Figure 1;
  • Figure 3 is a plan view of the base of the evaporation source heating device shown in Figure 1;
  • Fig. 4 is a perspective view of the base of the vapor deposition source heating device shown in Fig. 1. detailed description
  • the present invention provides an evaporation source heating device 10 including a base 20, a housing 80 connected to the base 20, a heating element 60 disposed inside the housing 80, and a heating element.
  • a plurality of metal cylinders 40 which are mounted on the base 20 at the inner side of the 60, and a weir 90 provided in the metal cylinder 40.
  • the base 20 is received in the outer casing 80.
  • the base 20 is provided with a plurality of concentric annular grooves 21, and the metal cylinder 40 is a cylinder.
  • the plurality of metal cylinders 40 are respectively mounted on the plurality of grooves 21. on.
  • the heating element 60 is a heating resistor wire.
  • the base 20 has four concentric annular grooves 21, and the plurality of metal cylinders 40 from the outside to the inside are 2 la , 21b , 21c , 21d 0 , respectively First layer (outer layer) metal cylinder 40a, second layer (intermediate layer) metal cylinder 40b, and third layer (innermost layer) metal cylinder 40c, said first layer metal cylinder 40a, second layer metal
  • the cylinder 40b and the third metal cylinder 40c are respectively mounted on the grooves 21a, 21b and 21c, and the crucible 90 is disposed at the center of the third metal cylinder 40c, and is mounted on the innermost groove of the base 20.
  • the present invention can adjust the number of the grooves 21 on the base 20 and the number of the metal cylinders 40 mounted on the base 20 as needed to achieve an optimum heating effect on the crucible 90 in the evaporation source heating device 10.
  • the heating element 60 When the heating element 60 starts to heat, the heat is gradually conducted inwardly through the first metal cylinder 40a to the second metal cylinder 40b and the third metal cylinder 40c, but is again conducted to the crucible 90 to heat the crucible 90. .
  • the heat generated by the heating element 60 in the evaporation source heating device 10 heats the metal cylinder 40 in the form of heat radiation.
  • the first layer of metal cylinder 40a Since the heat generated at different positions of the heating element 60 may be different, the first layer of metal cylinder 40a is There is a temperature difference, because the metal can be very The heat is radiated well, and the first layer of metal cylinder 40a radiates heat to the second layer of metal cylinder 40b, and the heat of the high temperature portion thereof is transmitted to the temperature portion thereof, thereby making the first layer of metal cylinder 40a at different positions.
  • the temperature difference becomes smaller, and the temperature difference of the second layer metal cylinder 40b becomes smaller, and the temperature difference of the third layer metal cylinder 40C is substantially zero. Therefore, when the heat is transferred to the inner ⁇ 90, the ⁇ ⁇ 90 The heat without temperature difference can be obtained at different positions, so that the crucible 90 is evenly heated. That is, the uneven heat generation of the heating element 60 is converted into uniform heat generation to the crucible 90 by the arrangement of the metal cylinder 40, so that there is no temperature difference inside the crucible 90.
  • the height of the metal cylinder 40 may be equal to or lower than the height of the outer casing 80 such that the metal cylinder 40 does not protrude beyond the outer casing 80.
  • the height of the first layer metal cylinder 40a is higher than the height of the ⁇ 90
  • the height of the second layer metal cylinder 40b is lower than the height of the first layer metal cylinder 40a
  • the third layer The height of the metal cylinder 40c is +/- the height of the second metal cylinder 40b and is equal to the height of the crucible 90.
  • the height of the metal cylinder 40 may be the same as or close to the height of the crucible 90.
  • the number of the grooves 21 on the base 20 and the metal cylinders 40 mounted on the grooves 21 can be increased or decreased as needed for the heating effect.
  • the base 20 can be made of metal, adiabatic ceramic or other materials.
  • the metal cylinder 40 is made of a metal sheet having a thickness of 0.01 mm to 10 cm; the metal sheet may be made of aluminum, aluminum alloy, titanium, titanium alloy, or other thermal conductivity. Metal.
  • a plurality of metal cylinders are disposed between the heating element and the crucible, and the plurality of metal cylinders are mounted on the base, and when heated, the heating elements are gradually conducted through the plurality of metal cylinders.
  • the heat method is to transfer heat to the crucible. Because the metal tube has good thermal conductivity, the heat distribution on the metal tube is uniform, so that the crucible is evenly heated, and the evaporation effect is ensured. At the same time, the number of metal cylinders can be increased or decreased as needed to adjust The metal cylinder transmits and equalizes the temperature, thereby adjusting the temperature difference of the crucible.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供一种蒸镀源加热装置，包括：底座、连接于底座的外壳、设于外壳内侧的加热元件、设于加热元件内侧且安装于底座上的数个金属筒、及设于金属筒内的坩埚。本发明的蒸镀源加热装置，在加热元件与坩埚之间设置数个金属筒，所述数个金属筒安装于底座上，加热时，通过数个金属筒逐渐传导加热元件的热量的方式，将热量传导给坩埚，由于金属筒导热性能好，其上热量分布均匀，使得坩埚受热均匀，保证了蒸镀效果。

Description

蒸镀源加热装: 技术领域
本发明涉及有机电致发光器件制作领域，尤其涉及一种蒸镀源加热装
背景技术
有机电致发光器件是一种自发光器件，具有电压低，视角宽、 响应速 度快、 温度适应性好等优势，被认为在平板显示中有着巨大的应用前景， 甚至被认为是继等离子 (PDP)、 液晶 (LCD)之后的新一代平板显示技术。
从使用的有机电致发光材料的分子量来看，有机电致发光器件分为小 分子有机电致发光器件 ( OLED )与高分子电致发光器件 (PLED) ,由于分子 量的不同，两种有机电致发光器件的制程也有很大的区别， OLED主要通 过热蒸镀方式制备， PLED通过旋涂或者喷墨打印方式制备。
OLED通常包括：基板、 置于基板上的 ITO透明阳极、 置于 ITO透明 阳极上的空穴注入层 (HIL)、 置于空穴注入层上的空穴传输层 (HTL)、 置于 空穴传输层上的发光层 (EML)、 置于发光层上的电子传输层 (ETL)、 置于电 子传输层上的电子注入层 (EIL)以及置于电子注入层上的阴极。为了提高效 率，发光层通常采用主 /客体掺杂系统。
OLED制程采用的热蒸镀方式，在真空环境下 ( 5 Pa )加热有机材料， 使升华型或者熔融型的有机材料在高温状态下气化,沉积在有 TFT结构或者 阳极结构的基板上。 目前主流的蒸镀源主要有点型蒸镀源和线型蒸镀源。 点型蒸镀源主要用在实验线和早期的量产线，由于线型蒸镀源的材料利用 率和膜厚均一性要优于点型蒸镀源，近期建设的量产线大部分使用线性蒸 镀源。 但由于点型蒸镀源的空间小，一个镀膜腔体里可以安装很多个点型 蒸镀源，可以填入很多种材料，适用于实验线。
有机材料的蒸发温度与其裂解温度相差很小，点型蒸镀源的坩埚内部 往往温差较大 (上热下冷 ) ,若材料填入量较多，材料无法达到一个热平衡 稳定的状态，蒸镀速率无法稳定；提高温度，使材料热稳定，往往上面的 材料有裂解的风险。 若材料填入量较少，在高蒸镀速率下，坩埚上部的温 度往往超过材料的裂解温度，气化的材料在经过此段区域时容易裂解。 发明内容
本发明的目的在于提供一种蒸镀源加热装置，在加热元件与坩埚之间 设置数个金属筒，通过数个金属筒逐渐传导加热元件的热量的方式，使得 ±甘埚受热均匀，保证了蒸镀效果。 为实现上述目的，本发明提供一种蒸镀源加热装置，包括：底座、 连 接于底座的外壳、 设于外壳内侧的加热元件、 设于加热元件内侧且安装于 底座上的数个金属筒、 及设于金属筒内的坩埚。
所述底座容纳于外壳内，所述底座设有数个凹槽，所述数个金属筒分 别安装于该数个凹槽上。
所述金属筒为圆筒，所述凹槽为圆环状凹槽。
所述圆形环状凹槽同心。
所述金属筒的高度等于或 ί氏于所述外壳的高度。
所述底座由金属或绝热陶瓷制成。
所述金属筒由金属片制成。
所述金属片的厚度为 0.01mm〜10cm。
所述金属片的材质为铝、 铝合金、 钛、 钛合金、 或者其他导热系数良 好的金属。
所述加热元件为加热电阻丝。
本发明还提供一种蒸镀源加热装置，包括：底座、 连接于底座的外壳、 设于外壳内侧的加热元件、 设于加热元件内侧且安装于底座上的数个金属 筒、 及设于金属筒内的坩埚； 其中，所述底座容纳于外壳内，所述底座设有数个 [Η]槽，所述数个金 属筒分别安装于该数个凹槽上；
其中，所述金属筒为圆筒，所述凹槽为圆环状凹槽；
其中，所述圆形环状凹槽同心；
其中，所述金属筒的高度等于或 ί氏于所述外壳的高度；
其中，所述底座由金属或绝热陶瓷制成；
其中，所述金属筒由金属片制成；
其中，所述金属片的厚度为 0.01mm〜10cm；
其中，所述金属片的材质为铝、 铝合金、 钛、 钛合金、 或者其他导热 系数良好的金属；
其中，所述加热元件为加热电阻丝。
本发明的有益效果：本发明的蒸镀源加热装置，在加热元件与坩埚之 间设置数个金属筒，所述数个金属筒安装于底座上，加热时，通过数个金 属筒逐渐传导加热元件的热量的方式，将热量传导给坩埚，由于金属筒导 热性能好，其上热量分布均匀，使得坩埚受热均匀，保证了蒸镀效果；同 时可以根据需要增加或减少金属筒的个数，以调节金属筒对温度的传递和 均衡作用，进而调节坩埚的温度差。 为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本 发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 1为本发明蒸镀源加热装置一实施例的立体示意图；
图 2为图 1所示蒸镀源加热装置的剖视示意图；
图 3为图 1所示蒸镀源加热装置的底座的俯视图；
图 4为图 1所示蒸镀源加热装置的底座的立体图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 1-4 ,本发明提供一种蒸镀源加热装置 10 ,包括底座 20、 连 接于底座 20上的外壳 80、 设于外壳 80内侧的加热元件 60、 设于加热元件 60内侧且安装于底座 20上的数个金属筒 40、及设于金属筒 40内的坩埚 90。 所述底座 20容纳于外壳 80内，所述底座 20设有数个同心圆环状凹槽 21 , 所述金属筒 40为圆筒，所述数个金属筒 40分别安装于该数个凹槽 21上。 所述加热元件 60为加热电阻丝。
在本实施例中，所述底座 20具有四个同心圆环状凹槽 21 ,由外至内分 别为 2la , 21b , 21c , 21d0 所述数个金属筒 40为三个，分别为第一层 (最 夕卜层 )金属筒 40a ,第二层（中间层）金属筒 40b ,与第三层（最内层）金 属筒 40c ,所述第一层金属筒 40a ,第二层金属筒 40b ,与第三层金属筒 40c 分别安装于凹槽 21a , 21b与 21c上，所述坩埚 90设置于第三层金属筒 40c 中心，且安装于所述底座 20上最内层的凹槽 21d上。 同时，本发明可根据 需要调整底座 20上凹槽 21的数量，以及底座 20上安装的金属筒 40的数 量，以实现对所述蒸镀源加热装置 10内的坩埚 90最佳的加热效果。
当加热元件 60开始加热时，热量通过第一层金属圆筒 40a逐步向内传 导至第二层金属圆筒 40b与第三层金属筒 40c ,然而再传导给坩埚 90 ,实 现对坩埚 90进行加热。 真空状态下，蒸镀源加热装置 10中加热元件 60发 出的热量会以热辐射的方式加热金属筒 40 ,由于加热元件 60的不同位置发 出的热量可能不同，因此，第一层金属筒 40a上存在温差，由于金属能很 好地传导热量，第一层金属筒 40a在向第二层金属筒 40b辐射热量的同时， 其高温部位的热量会传导至其 ί氏温部位，从而使得第一层金属筒 40a上不 同位置的温差变小，进而第二层金属筒 40b的温差会变的更小，而第三层 金属筒 40C的温差则基本为 0 ,因此，热量传递到内部的坩埚 90时，所述 ±甘埚 90不同位置可以获得无温差的热量，从而使坩埚 90受热均匀。 也就 是，通过金属筒 40的设置将加热元件 60的不均匀发热转换成均匀发热传 递给坩埚 90,从而实现坩埚 90内部没有温差。
所述金属筒 40的高度可以等于或低于所述外壳 80的高度，使金属筒 40不伸出外壳 80。本实施例中，所述第一层金属筒 40a的高度高于坩埚 90 的高度，所述第二层金属筒 40b的高度低于所述第一层金属筒 40a的高度， 所述第三层金属筒 40c的高度 ί氏于所述第二层金属筒 40b的高度，且等于 坩埚 90的高度。 而做为可选择的变化，所述金属筒 40的高度与坩埚 90的 高度相同或接近都可以。 所述底座 20上的凹槽 21以及安装于所述凹槽 21 的金属筒 40的数量可根据加热效果的需要进行增加或减少。
所述底座 20可以由金属，绝热陶瓷或者其他材料制成。
所述金属筒 40由金属片制成，所述金属片的厚度为 0.01mm〜10cm；所 述金属片的材质可以是铝，铝合金，钛，钛合金，或其他导热系数良好的 金属。
综上所述，本发明的蒸镀源加热装置，在加热元件与坩埚之间设置数 个金属筒，所述数个金属筒安装于底座上，加热时，通过数个金属筒逐渐 传导加热元件的热量的方式，将热量传导给坩埚，由于金属筒导热性能好 , 其上热量分布均匀，使得坩埚受热均匀，保证了蒸镀效果；同时可以根据 需要增加或减少金属筒的个数，以调节金属筒对温度的传递和均衡作用， 进而调节坩埚的温度差。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

杈 利 要 求
1、 一种蒸镀源加热装置，包括：底座、 连接于底座的外壳、 设于外壳 内侧的加热元件、 设于加热元件内侧且安装于底座上的数个金属筒、 及设 于金属筒内的坩埚。
2、 如权利要求 1所述的蒸镀源加热装置，其中，所述底座容纳于外壳 内，所述底座设有数个凹槽，所述数个金属筒分别安装于该数个凹槽上。
3、 如权利要求 2所述的蒸镀源加热装置，其中，所述金属筒为圆筒， 所述凹槽为圆环状凹槽。
4、 如权利要求 3所述的蒸镀源加热装置，其中，所述圆形环状凹槽同 心。
5、 如权利要求 1所述的蒸镀源加热装置，其中，所述金属筒的高度等 于或低于所述外壳的高度。
6、 如权利要求 1所述的蒸镀源加热装置，其中，所述底座由金属或绝 热陶瓷制成。
7、 如权利要求 1所述的蒸镀源加热装置，其中，所述金属筒由金属片 制成。
8、 如权利要求 7所述的蒸镀源加热装置，其中，所述金属片的厚度为
0.01mm〜10cm。
9、 如权利要求 7所述的蒸镀源加热装置，其中，所述金属片的材质为 铝、 铝合金、 钛、 钛合金、 或者其他导热系数良好的金属。
10、 如权利要求 1所述的蒸镀源加热装置，其中，所述加热元件为加 热电阻丝。
11、 一种蒸镀源加热装置，包括：底座、 连接于底座的外壳、 设于外 壳内侧的加热元件、 设于加热元件内侧且安装于底座上的数个金属筒、 及 设于金属筒内的坩埚；
其中，所述底座容纳于外壳内，所述底座设有数个 [H]槽，所述数个金 属筒分别安装于该数个凹槽上；
其中，所述金属筒为圆筒，所述凹槽为圆环状凹槽；
其中，所述圆形环状凹槽同心；
其中，所述金属筒的高度等于或 ί氏于所述外壳的高度；
其中，所述底座由金属或绝热陶瓷制成；
其中，所述金属筒由金属片制成；
其中，所述金属片的厚度为 0.01mm〜10cm；
其中，所述金属片的材质为铝、 铝合金、 钛、 钛合金、 或者其他导热 系数良好的金属； 其中，所述加热元件为加热电阻丝。
PCT/CN2014/079709 2014-05-28 2014-06-12 蒸镀源加热装置 WO2015180210A1 (zh)

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016082874A1 (en) * 2014-11-26 2016-06-02 Applied Materials, Inc. Crucible assembly for evaporation purposes
CN104593730B (zh) * 2014-12-24 2017-02-22 深圳市华星光电技术有限公司 防止oled材料裂解的坩埚
CN104947042B (zh) * 2015-05-25 2017-09-29 京东方科技集团股份有限公司 一种蒸发装置
CN105132866B (zh) * 2015-09-08 2018-02-16 京东方科技集团股份有限公司 一种蒸镀机的加热源装置及蒸镀机
CN115404447B (zh) * 2022-09-29 2024-06-04 京东方科技集团股份有限公司 坩埚组件以及具有其的蒸镀装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000160328A (ja) * 1998-11-30 2000-06-13 Idemitsu Kosan Co Ltd 素子用薄膜層の蒸着方法、蒸着装置および有機エレクトロルミネッセンス素子
JP2001234335A (ja) * 2000-02-17 2001-08-31 Matsushita Electric Works Ltd 蒸着装置
CN101054168A (zh) * 2006-04-13 2007-10-17 张世才 高纯砷的生产方法
KR20110118537A (ko) * 2010-04-23 2011-10-31 (주)알파플러스 열복사 가열형 선형 증발원 장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041719A (en) * 1990-06-01 1991-08-20 General Electric Company Two-zone electrical furnace for molecular beam epitaxial apparatus
US20050022743A1 (en) * 2003-07-31 2005-02-03 Semiconductor Energy Laboratory Co., Ltd. Evaporation container and vapor deposition apparatus
KR100671673B1 (ko) * 2005-03-09 2007-01-19 삼성에스디아이 주식회사 다중 진공증착장치 및 제어방법
JP2007201348A (ja) * 2006-01-30 2007-08-09 Epiquest:Kk パージセル
EP2109899A4 (en) * 2006-12-19 2012-12-12 Veeco Instr Inc SOILING METHOD AND METHOD
EP2325348B1 (en) * 2009-11-20 2012-10-24 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Device and method for thermal evaporation of silicon
CN102373420A (zh) * 2010-08-24 2012-03-14 鸿富锦精密工业（深圳）有限公司 坩埚及具有该坩埚的蒸镀设备
CN102383103A (zh) * 2010-08-30 2012-03-21 鸿富锦精密工业（深圳）有限公司 镀膜承载装置及具有该镀膜承载装置的光学镀膜设备
JP2012172185A (ja) * 2011-02-21 2012-09-10 Mitsubishi Heavy Ind Ltd 蒸着用容器、及びこれを備えた蒸着装置
FR2992976B1 (fr) * 2012-07-04 2014-07-18 Riber Dispositif d'evaporation pour appareil de depot sous vide et appareil de depot sous vide comprenant un tel dispositif d'evaporation
KR102124588B1 (ko) * 2012-10-22 2020-06-22 삼성디스플레이 주식회사 선형 증착원 및 이를 포함하는 진공 증착 장치
CN203534178U (zh) * 2013-09-29 2014-04-09 东旭集团有限公司 一种新型坩埚定位底座

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000160328A (ja) * 1998-11-30 2000-06-13 Idemitsu Kosan Co Ltd 素子用薄膜層の蒸着方法、蒸着装置および有機エレクトロルミネッセンス素子
JP2001234335A (ja) * 2000-02-17 2001-08-31 Matsushita Electric Works Ltd 蒸着装置
CN101054168A (zh) * 2006-04-13 2007-10-17 张世才 高纯砷的生产方法
KR20110118537A (ko) * 2010-04-23 2011-10-31 (주)알파플러스 열복사 가열형 선형 증발원 장치

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