CN103955089A - 显示面板及其制作方法 - Google Patents
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Abstract
本发明提供一种显示面板及其制作方法,本发明的显示面板包括基板、像素阵列、周边电路以及保护层。基板包括显示区以及非显示区。像素阵列位于基板的显示区中。周边电路位于非显示区中。保护层位于显示区以及非显示区且覆盖周边电路以及像素阵列,其中非显示区的保护层具有多个开孔以暴露出基板,且上述开孔的孔径介于1μm至1mm之间,该些开孔的间距介于10μm至1cm之间。
Description
技术领域
本发明涉及一种显示面板及其制造方法,特别是涉及一种可挠式显示面板及其制造方法。
背景技术
随着显示技术的突飞猛进,显示器已从早期的阴极射线管(cathode raytube,CRT)显示器逐渐地发展到目前的平面显示器(flat panel display,FPD)。相较于硬质载板(诸如玻璃基板)所构成的平面显示器,可挠性基板(诸如塑料基板)具有可挠曲及耐冲击等特性。因此,近年来已着手研究将主动元件制作于可挠式基板上的可挠式显示器。
一般而言,可挠式显示面板的制作方式是先将可挠式基板通过离型接口固定在玻璃基板上。之后,再于可挠式基板上进行显示元件的制作程序。待完成显示元件的制作后,通过从玻璃基板的背部照射紫外光(UV)或加热处理的方式,弱化离型接口与可挠式基板之间的结合力,从而将可挠式基板自玻璃基板取下。然而,若是于上述取下可挠式基板之前即完成芯片接合(IC bonding),则硬质的IC会造成应力集中而增加离型力,以致于取下可挠式基板的过程中可能会对可挠式基板上的薄膜造成破坏。
发明内容
本发明提供一种显示面板及其制造方法,可以降低取下可挠式基板时的离型力,进而提高取下可挠式基板的成功率。
本发明提供一种显示面板,其包括基板、像素阵列、周边电路以及保护层。基板包括显示区以及非显示区。像素阵列位于基板的显示区中。周边电路位于非显示区中。保护层位于显示区以及非显示区且覆盖周边电路以及像素阵列,其中非显示区的保护层具有多个开孔以暴露出基板,且上述开孔的孔径介于1μm至1mm之间,该些开孔的间距介于10μm至1cm之间。
本发明还提供一种显示面板的制造方法,其包括下列步骤:在支撑基板上依序形成胶材层以及基板,其中基板具有显示区以及非显示区;在基板的显示区中形成像素阵列,且于基板的非显示区中形成周边电路,且周边电路与像素阵列电性连接;在基板上形成保护层,覆盖周边电路以及像素阵列;在非显示区的保护层中形成多个开孔,以暴露出基板;通入气体并对胶材进行处理程序,以使胶材层与基板之间的粘着力降低,其中气体经由上述开孔通入基板并且扩散至胶材层;以及使基板与胶材层分离。
基于上述,本发明的显示面板于非显示区的保护层具有多个开孔,可以大幅降低取下可挠式基板时的离型力,提高取下可挠式基板的成功率,进而增加显示面板产品的良率。
为让本发明的上述特征和优点能更明显易懂,以下特举实施例,并配合所附附图作详细说明如下。
附图说明
图1是根据本发明的一实施例的显示面板的上视示意图;
图2是图1的显示面板的R区的放大示意图;
图3是根据本发明的另一实施例的显示面板的上视示意图;
图4A至图4I是沿图1的显示面板的线I-I’所示出的本发明的一实施例的显示面板的制造工艺剖面图。
附图标记
100、200:显示面板 110:支撑基板
120:胶材层 130:基板
140:缓冲层 150:保护层
160:开孔 C:导电元件
d1:孔径 d2:间距
G:气体 I-I’:线
IC:芯片 L:光
PX:像素结构 R1:显示区
R2:非显示区 S:周边电路
具体实施方式
图1是根据本发明的一实施例的显示面板的上视示意图。图2是图1的显示面板的R区的放大示意图。请同时参照图1与图2。在本实施例中,显示面板100的基板130包括显示区R1以及非显示区R2。显示面板100在显示区R1显示影像,因此显示面板中用以显示影像的元件(例如是像素结构PX与显示介质)会配置于显示区R1,如图1所示,像素结构PX于显示区R1中形成像素阵列(pixel array)。相对地,非显示区R2不显示影像,故通常会于非显示区R2形成周边电路S以及驱动芯片区R,以避免影响显示面板100的外观。其中,周边电路S与像素结构PX电性连接,且驱动芯片区R可包括芯片IC,用来驱动显示面板100。在本实施例中,显示区R1为一矩形区域,而非显示区R2为一环绕并邻接显示区R1的口字形区域。在本发明的其它实施例中,显示区R1的形状亦可为圆形、椭圆形、多边形或其它形状,而非显示区R2的形状亦可搭配显示区R1的形状而做适当的更动,本发明不限于此。此外,本实施例的驱动芯片区R为一位于非显示区R2一侧的矩形区域,然而其它实施例的驱动芯片区R亦可位于非显示区R2的另一侧甚至是环绕显示区R1周围来配置。
本实施例的显示面板100例如是使用非晶硅(amorphous silicon)、氧化物半导体(oxide semiconductor)或低温多晶硅(low-temperature polysilicon,LTPS)作为薄膜晶体管内的主动层的液晶显示(liquid crystal display,LCD)面板或有机发光二极管(organic light emitting diode,OLED)面板,但本发明不限制显示面板的种类。像素结构PX会随着显示面板100的类型而有不同的组成。例如,主动元件为薄膜晶体管,而显示元件为电泳显示(electro-phoreticdisplay,EPD)元件或有机发光二极管(OLED)显示元件等。另外,在已知的显示架构中,像素结构PX还可包括扫描线、数据线、像素电极等构件,而上述像素结构PX的制作例如经过涂布、沉积、蚀刻、高温处理等程序。基板130可包括聚亚酰胺(polyimide,PI)等有机材料。
本实施例的显示面板100的显示区R1以及非显示区R2可具有保护层(未示出),且上述保护层覆盖周边电路S以及像素结构PX所形成的像素阵列。应注意的是,非显示区R2的保护层可具有多个开孔160(如图2所示),且上述开孔160暴露出基板130,亦即,开孔160未穿过基板130。特别地,本实施例的开孔160是形成于非显示区R2的驱动芯片区R,然而本发明不限于此,开孔160亦可形成于非显示区R2的其它位置。开孔160的孔径d1例如是介于1μm至1mm之间,开孔160的间距d2例如是介于10μm至1cm之间,然而本发明不限于此。取决于基板130上方的薄膜的性质,可调整非显示区R2的开孔160的孔径d1与间距d2。举例而言,当基板130上方的薄膜具有收缩应力时,由于气体不易于基板内横向扩散,故需要放大开孔160的孔径d1或缩小开孔160的间距d2,以提高通过开孔160而达到基板130下方的胶材层(未示出)的气体量;相反地,当基板130上方的薄膜具有拉伸应力时,则可缩小开孔160的孔径d1或增加开孔160的间距d2,亦即,可降低开孔160于非显示区R2中的分布密度,如此可使显示面板100的设计与制造工艺变得更加方便。当增加上层薄膜的拉伸应力时,例如:涂布一层有机材质介电层,其会带来额外拉伸应力,即可观察到气体于基板内横向扩散距离增加。此外,如图2所示,本实施例的开孔160为均匀分布,然而本发明不限于此,亦可视制造工艺需要调整开孔160分布的形式,只要开孔160不与非显示区R2中的金属元件(例如导线、薄膜晶体管)重叠即可。
图3是根据本发明的另一实施例的显示面板的上视示意图。本实施例与图1的实施例类似,故相同或相似的元件以相同或相似的的元件符号表示,且于此不再赘述。显示面板200与显示面板100的唯一差异在于,显示面板200的驱动芯片区R已接合上芯片IC。如前所述,一般若是于取下基板130之前即完成芯片IC接合,则硬质的芯片IC会造成应力集中而增加离型力,以致于取下基板130的过程中可能会对基板130上的薄膜造成破坏。值得一提的是,本实施例的显示面板200的非显示区R2的保护层(未示出)可具有多个开孔160(如图2所示),且上述开孔160暴露出基板130,亦即开孔160未穿过基板130。借由将多个开孔160配置于非显示区R2,气体可通过开孔160扩散到基板130,且由于基板130的材质(例如聚亚酰胺(PI))具有不阻气的特性,气体可进一步扩散至基板130下方的胶材层(未示出)。结合气体与后续例如UV或加热的处理,使基板130与胶材层分离。基于上述,根据本发明一实施例的显示面板200因为于非显示区R2具有多个开孔160,而可大幅降低芯片IC接合导致其基板130取下所需的离型力,进而提高显示面板200产品的良率。特别地,由于开孔160是位于非显示区R2,故在显示面板200为OLED面板的情况下,亦不会破坏OLED区域的阻水与阻气特性。以下将参照附图,更详细地说明显示面板100的制造工艺步骤。
图4A至图4I是沿图1的显示面板的线I-I’所示出的本发明的一实施例的显示面板的制造工艺剖面图。首先,请参照图4A,在支撑基板110上形成胶材层120。支撑基板110例如是玻璃基板等具有透光性且可提供充分的支撑强度的板材。胶材层120例如是对紫外光敏感(UV-sensitive)或对特定波段的光线敏感的有机材料,其材质可包括聚对二甲苯(parylene)或光阻材料。上述聚对二甲苯可为N型、C型、D型或HT型的聚对二甲苯,而上述光阻材料可为正型光阻或负型光阻。更具体而言,正型光阻例如是酚醛树脂(phenolformaldehyde resin)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA,或称Acrylic),而负型光阻例如是环氧基体树脂(epoxy-base resin)或亚克力型树脂(acrylic series)。支撑基板110与胶材层120具有良好的温度耐受性,并且可借由后续的高温制造工艺(例如大于250℃)来强化支撑基板110与胶材层120之间的粘着力。
接着,请参照图4B,在胶材层120上方形成基板130,并借由胶材层120将基板130固定于支撑基板110上,其中基板130具有显示区R1以及非显示区R2,非显示区R2还可包括驱动芯片区R。在此,由于后续的高温制造工艺可强化支撑基板110与胶材层120之间的粘着力,因此基板130会被稳固地附着在支撑基板110上。基板130的材质可包括聚亚酰胺(polyimide,PI)等有机材料。此外,本实施例的胶材层120例如是完全覆盖基板130的底面,也就是说,不需要对胶材层120进行图案化制造工艺,而是在基板130的接合面上形成全面的胶材层120。
然后,如图4C所示,于基板130上形成缓冲层(buffer layer)140。缓冲层140的材料包括无机材料(例如:氧化硅、氮化硅、氮氧化硅、其它合适的材料、或上述至少两种材料的堆栈层)、有机材料、或其它合适的材料、或上述的组合。在其它实施例中,可省略形成上述缓冲层140的步骤。
接着,如图4D所示,在基板130的显示区R1中形成由多个像素结构PX排列而成的像素阵列,为方便说明,在此仅示出一个像素结构PX。具体而言,像素结构PX可包括形成于基板130上的主动元件以及位于主动元件上的显示元件,在此,像素结构PX会随着显示面板100的类型而有不同的组成。例如,主动元件为薄膜晶体管,而显示元件为电泳显示元件或有机发光二极管显示元件。此外,在已知的显示架构中,像素结构PX还可包括扫描线、数据线、像素电极等构件,而上述像素阵列的制作例如经过涂布、沉积、蚀刻、高温处理等程序。此外,在此步骤中更于基板130的非显示区R2中形成周边电路,周边电路是由多个导电元件C所构成。导电元件C例如是金属导线、薄膜晶体管或电容器等元件。上述周边电路与像素阵列电性连接,以驱动像素结构PX的像素电极。
然后,如图4E所示,在基板130上形成保护层150,覆盖周边电路以及像素阵列。保护层可以是有机材料或是无机材料,本发明不限于此。
接着,如图4F所示,在非显示区R2的保护层150与缓冲层140中形成多个开孔160,且上述开孔160暴露出基板130。特别地,开孔160亦可形成于驱动芯片区R的保护层150与缓冲层140中。应注意的是,开孔160不与非显示区R2中的导电元件C重叠,且开孔160未穿过基板130而是止于基板130。开孔160的孔径d1例如是介于1μm至1mm之间,开孔160的间距例如是介于10μm至1cm之间,然而本发明不限于此。取决于基板130上方的薄膜的性质,可调整非显示区R2的开孔160的孔径d1与间距d2。举例而言,当基板130上方的薄膜具有收缩应力时,由于气体不易于基板内横向扩散,故需要放大开孔160的孔径d1或缩小开孔160的间距d2,以提高通过开孔160而达到基板130下方的胶材层120的气体量;相反地,当基板130上方的薄膜具有拉伸应力时,则可缩小开孔160的孔径d1或增加开孔160的间距d2,亦即,可降低开孔160于非显示区R2中的分布密度,如此可使显示面板100的设计与制造工艺变得更加方便。此外,开孔160的分布可以是均匀的或非均匀的,可视制造工艺需要调整开孔160分布的形式,只要开孔160不与非显示区R2中的金属元件C重叠即可。
再来,如图4G所示,在温度介于5℃至80℃且压力为一大气压的环境下通入气体G并对胶材进行处理程序,上述处理时间介于1秒至10分钟,以使胶材层120与基板130之间的粘着力降低,其中气体G经由上述开孔160通入基板130并且扩散至胶材层120。气体G包括大气或氧气。上述对胶材进行的处理程序包括照光程序或加热程序。举例而言,可由支撑基板110的背面对胶材层120照光L,以弱化胶材层120分别与基板130以及支撑基板110之间的粘着力。由于支撑基板110整体为透光体,因此胶材层120可以全面且均匀地受光而使胶材层120可均匀地受光裂解。在此,对胶材层120提供照光L的光线例如是紫外光,其功率例如介于5mW/cm2至300mW/cm2。当然,随着所选用的胶材层120的感光特性的不同,可能对胶材层120照射不同波段与不同功率的光线。
之后,参照图4H,将基板130与胶材层120分离而自支撑基板110上移除。值得一提的是,在本实施例中,经过上述对胶材进行的处理后,胶材层120与基板130的粘合面所受到的弱化程度大于胶材层120与支撑基板110的粘合面所受到的弱化程度,故基板130可与胶材层120分离,而使胶材层120保留于支撑基板110上。上述好处是不需再经过自基板130移除胶材层120的步骤而即可完成本发明一实施例的显示面板100的制作(如图4I所示)。在其它实施例中,胶材层120亦可留在基板130上而一起自支撑基板110上移除(未示出)。留在基板130上的胶材层120可以增加取下的显示面板100的阻水阻氧的能力。没有开孔160的现有显示面板将基板自支撑基板上剥离所需的离型力约为14gf/25mm,在剥离前已接合有芯片的情况下,离型力甚至可达1000gf/25mm。而在本实施例中,在剥离前已接合有芯片的情况下,将基板130自支撑基板110上剥离所需的离型力例如可大幅降低至小于或等于1gf/mm。当然,实际所需的离型力会随着胶材层120与支撑基板110的材质变化,并视对胶材层120进行的照光或加热处理不同而有所不同。
需说明的是,本发明对在驱动芯片区R中设置芯片IC的时间点并不限于是在将基板130与胶材层120分离之后,也可以选择在形成开孔160(图4F的步骤)之后,在驱动芯片区R中设置芯片IC,接着才进行通入气体G以及对胶材进行处理程序的步骤(图4G的步骤)。应注意,芯片IC的宽度不大于开孔160的间距,且芯片IC的长轴方向与开孔160平行。
综上所述,本发明的显示面板于非显示区的保护层具有多个开孔,可以大幅降低取下可挠式基板时的离型力,提高取下可挠式基板的成功率,进而增加显示面板产品的良率。
虽然本发明已以实施例揭示如上,然而其并非用以限定本发明,任何所属技术领域中具有通常知识的人员,在不脱离本发明的精神和范围内,当可作些许的变更与修饰,故本发明的保护范围应当由所附的权利要求书所界定为准。
Claims (10)
1.一种显示面板的制造方法,其特征在于,包括:
在一支撑基板上依序形成一胶材层以及一基板,其中该基板具有一显示区以及一非显示区;
在该基板的该显示区中形成一像素阵列,且于该基板的该非显示区中形成一周边电路,该周边电路与该像素阵列电性连接;
在该基板上形成一保护层,覆盖该周边电路以及该像素阵列;
在该非显示区的该保护层中形成多个开孔,以暴露出该基板;
通入一气体并对该胶材进行一处理程序,以使该胶材层与该基板之间的粘着力降低,其中该气体经由该些开孔通入该基板并且扩散至该胶材层;以及
使该基板与该胶材层分离。
2.根据权利要求1所述的显示面板的制造方法,其特征在于,该些开孔的孔径介于1μm至1mm,且该些开孔的间距介于10μm至1cm。
3.根据权利要求1所述的显示面板的制造方法,其特征在于,该非显示区还包括一驱动芯片区,且该些开孔形成在该驱动芯片区的该保护层中。
4.根据权利要求3所述的显示面板的制造方法,其特征在于,在形成该些开孔之后,还包括在该驱动芯片区内设置一芯片。
5.根据权利要求3所述的显示面板的制造方法,其特征在于,在通入该气体并对该胶材进行该处理程序之后,还包括在该驱动芯片区内设置一芯片。
6.根据权利要求1所述的显示面板的制造方法,其特征在于,通入的该气体包括氧气,且对该胶材进行的该处理程序包括一照光程序或是一加热程序。
7.一种显示面板,其特征在于,包括:
一基板,包括一显示区以及一非显示区;
一像素阵列,位于该基板的该显示区中;
一周边电路,位于该非显示区中;以及
一保护层,位于该显示区以及该非显示区且覆盖该周边电路以及该像素阵列,其中该非显示区的该保护层具有多个开孔以暴露出该基板,且该些开孔的孔径介于1μm至1mm之间,该些开孔的间距介于10μm至1cm之间。
8.根据权利要求7所述的显示面板,其特征在于,还包括:
一支撑基板,位于该基板的下方;以及
一胶材层,位于该基板与该支撑基板之间。
9.根据权利要求7所述的显示面板,其特征在于,该基板的该非显示区还包括一驱动芯片区,且该些开孔形成在该驱动芯片区的该保护层中。
10.根据权利要求9所述的显示面板,其特征在于,还包括一驱动芯片,位于该驱动芯片区中。
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Also Published As
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US9257669B2 (en) | 2016-02-09 |
US20160111690A1 (en) | 2016-04-21 |
US9349997B2 (en) | 2016-05-24 |
TWI518405B (zh) | 2016-01-21 |
TW201530216A (zh) | 2015-08-01 |
US20150214503A1 (en) | 2015-07-30 |
CN103955089B (zh) | 2016-09-21 |
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