CN103937505B - Ito膜刻蚀液 - Google Patents
Ito膜刻蚀液 Download PDFInfo
- Publication number
- CN103937505B CN103937505B CN201410182937.5A CN201410182937A CN103937505B CN 103937505 B CN103937505 B CN 103937505B CN 201410182937 A CN201410182937 A CN 201410182937A CN 103937505 B CN103937505 B CN 103937505B
- Authority
- CN
- China
- Prior art keywords
- weight parts
- etching liquid
- etching
- ito film
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005530 etching Methods 0.000 title claims abstract description 92
- 239000007788 liquid Substances 0.000 title claims abstract description 55
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 14
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- OGSPWJRAVKPPFI-UHFFFAOYSA-N Alendronic Acid Chemical compound NCCCC(O)(P(O)(O)=O)P(O)(O)=O OGSPWJRAVKPPFI-UHFFFAOYSA-N 0.000 claims abstract description 12
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229940062527 alendronate Drugs 0.000 claims abstract description 12
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 claims abstract description 12
- 239000012153 distilled water Substances 0.000 claims description 8
- 239000002994 raw material Substances 0.000 abstract description 13
- 229910021645 metal ion Inorganic materials 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 3
- 238000003916 acid precipitation Methods 0.000 abstract description 2
- 230000000536 complexating effect Effects 0.000 abstract description 2
- 238000010668 complexation reaction Methods 0.000 abstract description 2
- 150000007524 organic acids Chemical class 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 37
- 229910052738 indium Inorganic materials 0.000 description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 18
- 238000012360 testing method Methods 0.000 description 18
- 238000001035 drying Methods 0.000 description 12
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 7
- 239000002518 antifoaming agent Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 6
- 238000011056 performance test Methods 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- -1 sodium lauryl ether sulphates Chemical class 0.000 description 1
Landscapes
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Surface Treatment Of Glass (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
Claims (1)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510544292.XA CN105224125B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的方法 |
CN201510544291.5A CN105038799B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的刻蚀液 |
CN201510539375.XA CN105062491A (zh) | 2014-04-30 | 2014-04-30 | 一种ito膜刻蚀的方法 |
CN201510536476.1A CN105087008B (zh) | 2014-04-30 | 2014-04-30 | 用于ito膜刻蚀的刻蚀液 |
CN201410182937.5A CN103937505B (zh) | 2014-04-30 | 2014-04-30 | Ito膜刻蚀液 |
CN201510539374.5A CN105087009B (zh) | 2014-04-30 | 2014-04-30 | 一种用于ito膜刻蚀的工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410182937.5A CN103937505B (zh) | 2014-04-30 | 2014-04-30 | Ito膜刻蚀液 |
Related Child Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510544291.5A Division CN105038799B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的刻蚀液 |
CN201510539375.XA Division CN105062491A (zh) | 2014-04-30 | 2014-04-30 | 一种ito膜刻蚀的方法 |
CN201510544292.XA Division CN105224125B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的方法 |
CN201510539374.5A Division CN105087009B (zh) | 2014-04-30 | 2014-04-30 | 一种用于ito膜刻蚀的工艺 |
CN201510536476.1A Division CN105087008B (zh) | 2014-04-30 | 2014-04-30 | 用于ito膜刻蚀的刻蚀液 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103937505A CN103937505A (zh) | 2014-07-23 |
CN103937505B true CN103937505B (zh) | 2015-11-25 |
Family
ID=51185386
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510544292.XA Expired - Fee Related CN105224125B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的方法 |
CN201410182937.5A Active CN103937505B (zh) | 2014-04-30 | 2014-04-30 | Ito膜刻蚀液 |
CN201510539374.5A Active CN105087009B (zh) | 2014-04-30 | 2014-04-30 | 一种用于ito膜刻蚀的工艺 |
CN201510544291.5A Active CN105038799B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的刻蚀液 |
CN201510539375.XA Pending CN105062491A (zh) | 2014-04-30 | 2014-04-30 | 一种ito膜刻蚀的方法 |
CN201510536476.1A Expired - Fee Related CN105087008B (zh) | 2014-04-30 | 2014-04-30 | 用于ito膜刻蚀的刻蚀液 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510544292.XA Expired - Fee Related CN105224125B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的方法 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510539374.5A Active CN105087009B (zh) | 2014-04-30 | 2014-04-30 | 一种用于ito膜刻蚀的工艺 |
CN201510544291.5A Active CN105038799B (zh) | 2014-04-30 | 2014-04-30 | 一种对ito膜进行刻蚀的刻蚀液 |
CN201510539375.XA Pending CN105062491A (zh) | 2014-04-30 | 2014-04-30 | 一种ito膜刻蚀的方法 |
CN201510536476.1A Expired - Fee Related CN105087008B (zh) | 2014-04-30 | 2014-04-30 | 用于ito膜刻蚀的刻蚀液 |
Country Status (1)
Country | Link |
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CN (6) | CN105224125B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108559493A (zh) * | 2018-05-18 | 2018-09-21 | 南昌大学 | 一种氧化铝-氧化硅复合材料及制备方法 |
CN112680229A (zh) * | 2021-01-29 | 2021-04-20 | 深圳市百通达科技有限公司 | 一种湿电子化学的硅基材料蚀刻液及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101585662A (zh) * | 2009-05-11 | 2009-11-25 | 绵阳艾萨斯电子材料有限公司 | 平板显示用刻蚀液 |
CN103160909A (zh) * | 2011-12-15 | 2013-06-19 | 比亚迪股份有限公司 | 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2127009B (en) * | 1982-09-14 | 1986-11-19 | Glaverbel | Modifying glass bead surfaces |
WO2000011107A1 (en) * | 1998-08-18 | 2000-03-02 | Ki Won Lee | Ito etching composition |
US20050215713A1 (en) * | 2004-03-26 | 2005-09-29 | Hessell Edward T | Method of producing a crosslinked coating in the manufacture of integrated circuits |
JP2008536312A (ja) * | 2005-04-08 | 2008-09-04 | サッチェム, インコーポレイテッド | 金属窒化物の選択的なウェットエッチング |
EP1880410A2 (en) * | 2005-05-13 | 2008-01-23 | Sachem, Inc. | Selective wet etching of oxides |
KR100688570B1 (ko) * | 2005-08-31 | 2007-03-02 | 삼성전자주식회사 | 식각 마스크 패턴 형성용 코팅 조성물 및 이를 이용한반도체 소자의 미세 패턴 형성 방법 |
TWI421937B (zh) * | 2006-09-13 | 2014-01-01 | Nagase Chemtex Corp | 蝕刻液組成物 |
JP5311249B2 (ja) * | 2008-03-12 | 2013-10-09 | ナガセケムテックス株式会社 | アモルファスito透明導電膜用エッチング液組成物及びエッチング方法 |
EP2108357B1 (de) * | 2008-04-11 | 2014-02-12 | Mühlbauer Technology GmbH | Konditioniermittel für das Ätzen von Schmelzläsionen |
WO2010113744A1 (ja) * | 2009-03-30 | 2010-10-07 | 東レ株式会社 | 導電膜除去剤および導電膜除去方法 |
KR101608873B1 (ko) * | 2010-03-18 | 2016-04-05 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
US20110308614A1 (en) * | 2010-06-16 | 2011-12-22 | E. I. Du Pont De Nemours And Company | Etching composition and its use in a method of making a photovoltaic cell |
JP5788701B2 (ja) * | 2011-04-11 | 2015-10-07 | 関東化学株式会社 | 透明導電膜用エッチング液組成物 |
CN102226087B (zh) * | 2011-04-29 | 2013-09-04 | 西安东旺精细化学有限公司 | 透明导电膜湿法蚀刻液组合物 |
JP2012253225A (ja) * | 2011-06-03 | 2012-12-20 | Hayashi Junyaku Kogyo Kk | エッチング液組成物およびエッチング方法 |
JP5913869B2 (ja) * | 2011-08-31 | 2016-04-27 | 林純薬工業株式会社 | エッチング液組成物およびエッチング方法 |
CN102382657B (zh) * | 2011-10-11 | 2013-08-07 | 绵阳艾萨斯电子材料有限公司 | 一种透明导电膜用蚀刻液及其制备方法 |
CN102585832A (zh) * | 2011-12-30 | 2012-07-18 | 江阴江化微电子材料股份有限公司 | 一种低张力ito蚀刻液及其制备方法 |
EP2850495A4 (en) * | 2012-05-18 | 2016-01-20 | Entegris Inc | COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE |
-
2014
- 2014-04-30 CN CN201510544292.XA patent/CN105224125B/zh not_active Expired - Fee Related
- 2014-04-30 CN CN201410182937.5A patent/CN103937505B/zh active Active
- 2014-04-30 CN CN201510539374.5A patent/CN105087009B/zh active Active
- 2014-04-30 CN CN201510544291.5A patent/CN105038799B/zh active Active
- 2014-04-30 CN CN201510539375.XA patent/CN105062491A/zh active Pending
- 2014-04-30 CN CN201510536476.1A patent/CN105087008B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101585662A (zh) * | 2009-05-11 | 2009-11-25 | 绵阳艾萨斯电子材料有限公司 | 平板显示用刻蚀液 |
CN103160909A (zh) * | 2011-12-15 | 2013-06-19 | 比亚迪股份有限公司 | 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105087009A (zh) | 2015-11-25 |
CN105038799B (zh) | 2017-12-12 |
CN105038799A (zh) | 2015-11-11 |
CN105087008A (zh) | 2015-11-25 |
CN105224125A (zh) | 2016-01-06 |
CN105087009B (zh) | 2017-06-30 |
CN103937505A (zh) | 2014-07-23 |
CN105087008B (zh) | 2017-09-26 |
CN105224125B (zh) | 2017-11-14 |
CN105062491A (zh) | 2015-11-18 |
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CB02 | Change of applicant information |
Address after: 237011 Anhui province Lu'an City Jin'an District New River Road No. 2 Applicant after: Wang Li Address before: Sanhe Village to town list 246650 Anhui city of Anqing province Yuexi County Applicant before: Wang Li |
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Effective date of registration: 20181204 Address after: 246003 Changqing Industrial Park, Yingjiang District, Anqing, Anhui Patentee after: ANHUI LANXI ENGINEERING TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 237011 No. 2 Xinhe East Road, Jinan District, Luan City, Anhui Province Patentee before: Wang Li |
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Effective date of registration: 20201217 Address after: 233000 No.10, building 32, Zone 8, Guangcai market, bengshan District, Bengbu City, Anhui Province Patentee after: Bengbu Hongjing Technology Co.,Ltd. Address before: 246003 Changqing Industrial Park, Yingjiang District, Anqing, Anhui Patentee before: ANHUI LANXI ENGINEERING TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Effective date of registration: 20231214 Address after: 237000, Building 15, Anhui Shenghua Small and Medium sized Enterprise Science and Technology Entrepreneurship Park, Market Road, High tech Industrial Development Zone, Yu'an District, Lu'an City, Anhui Province Patentee after: Anhui Zhongke rantu Environmental Protection Technology Co.,Ltd. Address before: 233000 No.10, building 32, Zone 8, Guangcai market, bengshan District, Bengbu City, Anhui Province Patentee before: Bengbu Hongjing Technology Co.,Ltd. |