CN103890242B - 液体冷却热交换器 - Google Patents

液体冷却热交换器 Download PDF

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Publication number
CN103890242B
CN103890242B CN201280048372.0A CN201280048372A CN103890242B CN 103890242 B CN103890242 B CN 103890242B CN 201280048372 A CN201280048372 A CN 201280048372A CN 103890242 B CN103890242 B CN 103890242B
Authority
CN
China
Prior art keywords
crucible
liquid refrigerant
crystal growth
growth furnace
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280048372.0A
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English (en)
Chinese (zh)
Other versions
CN103890242A (zh
Inventor
C·夏蒂埃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTAT Corp
Original Assignee
GTAT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTAT Corp filed Critical GTAT Corp
Publication of CN103890242A publication Critical patent/CN103890242A/zh
Application granted granted Critical
Publication of CN103890242B publication Critical patent/CN103890242B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Silicon Compounds (AREA)
CN201280048372.0A 2011-08-01 2012-07-17 液体冷却热交换器 Expired - Fee Related CN103890242B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161514019P 2011-08-01 2011-08-01
US61/514,019 2011-08-01
PCT/US2012/047061 WO2013019401A1 (en) 2011-08-01 2012-07-17 Liquid-cooled heat exchanger

Publications (2)

Publication Number Publication Date
CN103890242A CN103890242A (zh) 2014-06-25
CN103890242B true CN103890242B (zh) 2018-05-08

Family

ID=47629587

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280048372.0A Expired - Fee Related CN103890242B (zh) 2011-08-01 2012-07-17 液体冷却热交换器

Country Status (7)

Country Link
US (1) US9982361B2 (enExample)
EP (1) EP2739771A4 (enExample)
JP (2) JP2014527013A (enExample)
KR (1) KR20140057305A (enExample)
CN (1) CN103890242B (enExample)
RU (1) RU2560439C1 (enExample)
WO (1) WO2013019401A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9139931B2 (en) * 2011-05-11 2015-09-22 Memc Singapore Pte. Ltd. Directional solidification furnace heat exchanger
WO2015047825A1 (en) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc Automated heat exchanger alignment
GB201319671D0 (en) 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
CN104792169A (zh) * 2015-04-29 2015-07-22 浙江天源炉业科技有限公司 一种加热炉
CN105586635B (zh) * 2016-01-20 2018-07-17 西安交通大学 一种铸锭快速凝固的装置及方法
KR102611508B1 (ko) * 2018-06-27 2023-12-08 엘지전자 주식회사 진공단열체 및 냉장고
IT201900000235A1 (it) * 2019-01-09 2020-07-09 Lpe Spa Camera di reazione per un reattore di deposizione con intercapedine ed elemento di chiusura inferiore e reattore
JP6959680B1 (ja) * 2020-11-13 2021-11-05 株式会社シンクロン 成膜装置
CN112725645A (zh) * 2020-12-22 2021-04-30 大冶市兴进铝业有限公司 一种新型铝型材制备装置
FR3119007B1 (fr) * 2021-01-19 2023-02-24 Air Liquide Dispositif d’accouplement et de détachement d’urgence
FR3131949B1 (fr) * 2022-01-17 2023-12-08 Air Liquide Dispositif d’accouplement et son procédé de purge
CN115029771A (zh) * 2022-07-13 2022-09-09 北京铭镓半导体有限公司 一种vgf法彩色宝石晶体生长坩埚防粘埚方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166711A (ja) 1986-12-26 1988-07-09 Osaka Titanium Seizo Kk 多結晶シリコン鋳塊の製造法
US5135047A (en) * 1989-10-05 1992-08-04 Flavio Dobran Furnace for high quality and superconducting bulk crystal growths
JPH06345585A (ja) 1993-06-14 1994-12-20 Sumitomo Metal Ind Ltd 単結晶引き上げ装置
JP3388664B2 (ja) * 1995-12-28 2003-03-24 シャープ株式会社 多結晶半導体の製造方法および製造装置
JPH09255484A (ja) 1996-03-26 1997-09-30 Sumitomo Sitix Corp 単結晶引き上げ用坩堝の支持部材
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JPH11310496A (ja) 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
JPH11292696A (ja) * 1998-04-15 1999-10-26 Nikon Corp 蛍石の製造装置
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
JP2005015264A (ja) * 2003-06-25 2005-01-20 Canon Inc 結晶製造装置及び方法
EP1643017A4 (en) * 2003-07-03 2009-05-06 Hitachi Chemical Co Ltd MIRROR AND METHOD FOR INCREASING CRYSTAL WITH THE HELP OF THE MIRROR
JP4777880B2 (ja) * 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
US8057598B2 (en) * 2006-06-13 2011-11-15 Young Sang Cho Manufacturing equipment for polysilicon ingot
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
KR100955221B1 (ko) * 2007-10-05 2010-04-29 주식회사 글로실 힌지를 이용한 도어 개폐장치가 구비된 태양전지용 다결정실리콘 주괴 제조 장치
WO2010005705A1 (en) * 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification
KR100947836B1 (ko) * 2009-09-28 2010-03-18 (주)세미머티리얼즈 실리콘 잉곳 제조장치
IT1396761B1 (it) 2009-10-21 2012-12-14 Saet Spa Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio

Also Published As

Publication number Publication date
JP2014527013A (ja) 2014-10-09
JP2017149641A (ja) 2017-08-31
US9982361B2 (en) 2018-05-29
WO2013019401A1 (en) 2013-02-07
US20160130721A1 (en) 2016-05-12
EP2739771A1 (en) 2014-06-11
KR20140057305A (ko) 2014-05-12
EP2739771A4 (en) 2014-11-19
CN103890242A (zh) 2014-06-25
RU2560439C1 (ru) 2015-08-20

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Granted publication date: 20180508

Termination date: 20180717