CN103875238B - 固态图像传感器和相机系统 - Google Patents

固态图像传感器和相机系统 Download PDF

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Publication number
CN103875238B
CN103875238B CN201280050010.5A CN201280050010A CN103875238B CN 103875238 B CN103875238 B CN 103875238B CN 201280050010 A CN201280050010 A CN 201280050010A CN 103875238 B CN103875238 B CN 103875238B
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input
amplifier
signal
modulator
integrator
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Chinese (zh)
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CN103875238A (zh
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若林准人
植野洋介
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Sony Semiconductor Solutions Corp
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Sony Corp
Sony Semiconductor Solutions Corp
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Priority to CN201710547671.3A priority Critical patent/CN107249108B/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analogue/Digital Conversion (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201280050010.5A 2011-10-20 2012-10-11 固态图像传感器和相机系统 Active CN103875238B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710547671.3A CN107249108B (zh) 2011-10-20 2012-10-11 固态图像传感器和相机系统

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011230676A JP5887827B2 (ja) 2011-10-20 2011-10-20 固体撮像素子およびカメラシステム
JP2011-230676 2011-10-20
PCT/JP2012/076351 WO2013058167A1 (ja) 2011-10-20 2012-10-11 固体撮像素子およびカメラシステム

Related Child Applications (1)

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Publications (2)

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CN103875238A CN103875238A (zh) 2014-06-18
CN103875238B true CN103875238B (zh) 2017-08-04

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US (2) US9451189B2 (https=)
EP (1) EP2770732B1 (https=)
JP (1) JP5887827B2 (https=)
KR (1) KR101969189B1 (https=)
CN (2) CN103875238B (https=)
WO (1) WO2013058167A1 (https=)

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KR102392791B1 (ko) * 2015-11-04 2022-05-02 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 장치 및 이의 동작 방법
US11692872B2 (en) * 2019-07-30 2023-07-04 Ams International Ag Reducing dark current in an optical device
CN114982222B (zh) * 2020-01-08 2024-10-15 华为技术有限公司 图像读取电路、图像读取方法、图像传感器以及终端设备
JP7405653B2 (ja) * 2020-03-11 2023-12-26 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ
EP3985555B1 (en) 2020-08-21 2023-10-11 Shenzhen Goodix Technology Co., Ltd. Image sensor, fingerprint detection apparatus, and electronic device
CN112714268B (zh) * 2020-08-21 2022-02-08 深圳市汇顶科技股份有限公司 图像传感器、指纹检测装置和电子设备
CN112798603A (zh) * 2021-01-06 2021-05-14 深圳技术大学 一种成像系统及其成像方法
JP7659398B2 (ja) * 2021-02-04 2025-04-09 キヤノン株式会社 光電変換装置、ａｄ変換器及び機器
CN114866708B (zh) 2021-02-04 2025-06-27 佳能株式会社 光电转换装置、a/d转换器和装备
JP2022119632A (ja) * 2021-02-04 2022-08-17 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP7649151B2 (ja) 2021-02-04 2025-03-19 キヤノン株式会社 光電変換装置、光電変換システム、移動体および半導体基板
JP7719616B2 (ja) * 2021-03-18 2025-08-06 キヤノン株式会社 光電変換装置、電子機器および基板
CN113489927B (zh) * 2021-06-01 2022-06-28 西安理工大学 一种cmos图像传感器的高速列线读出电路及读出方法
EP4283970B1 (en) 2021-06-16 2026-01-21 Samsung Electronics Co., Ltd. Electronic device for removing low-light noise, and operating method thereof
US12069391B2 (en) * 2021-07-29 2024-08-20 Omnivision Technologies, Inc. Readout architectures for dark current reduction in indirect time-of-flight sensors
JP7706356B2 (ja) * 2021-12-23 2025-07-11 株式会社デンソー Δς変調型ａ／ｄ変換装置
WO2023150949A1 (en) * 2022-02-10 2023-08-17 Huawei Technologies Co., Ltd. High speed, low power pixel bias circuit
US12015427B2 (en) 2022-04-05 2024-06-18 Stmicroelectronics (Research & Development) Limited Photodiode current compatible input stage for a sigma-delta analog-to-digital converter
JP2026050121A (ja) 2024-09-09 2026-03-19 キヤノン株式会社 Ａｄ変換回路、光電変換装置、撮像装置および移動体

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Also Published As

Publication number Publication date
US9843747B2 (en) 2017-12-12
US20160360130A1 (en) 2016-12-08
KR20140073509A (ko) 2014-06-16
JP2013090234A (ja) 2013-05-13
US20140293103A1 (en) 2014-10-02
KR101969189B1 (ko) 2019-04-15
JP5887827B2 (ja) 2016-03-16
EP2770732A4 (en) 2015-06-10
CN107249108B (zh) 2020-11-10
EP2770732B1 (en) 2018-01-10
WO2013058167A1 (ja) 2013-04-25
CN107249108A (zh) 2017-10-13
US9451189B2 (en) 2016-09-20
EP2770732A1 (en) 2014-08-27
CN103875238A (zh) 2014-06-18

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