CN103875065A - 底部填充组合物 - Google Patents
底部填充组合物 Download PDFInfo
- Publication number
- CN103875065A CN103875065A CN201280049573.2A CN201280049573A CN103875065A CN 103875065 A CN103875065 A CN 103875065A CN 201280049573 A CN201280049573 A CN 201280049573A CN 103875065 A CN103875065 A CN 103875065A
- Authority
- CN
- China
- Prior art keywords
- composition
- compound
- electronic installation
- methyl
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 127
- -1 acrylic compound Chemical class 0.000 claims abstract description 57
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000009434 installation Methods 0.000 claims description 37
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 20
- 125000000746 allylic group Chemical group 0.000 claims description 19
- 150000001260 acyclic compounds Chemical class 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000003999 initiator Substances 0.000 claims description 10
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 28
- 150000001875 compounds Chemical class 0.000 description 25
- 238000000034 method Methods 0.000 description 23
- 239000000853 adhesive Substances 0.000 description 22
- 230000001070 adhesive effect Effects 0.000 description 22
- 238000000576 coating method Methods 0.000 description 15
- 150000003254 radicals Chemical class 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 229920001971 elastomer Polymers 0.000 description 10
- 239000000945 filler Substances 0.000 description 10
- 239000005060 rubber Substances 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert-Butyl hydroperoxide Substances CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 7
- 150000001721 carbon Chemical group 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 125000001118 alkylidene group Chemical group 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 238000011900 installation process Methods 0.000 description 4
- 238000004898 kneading Methods 0.000 description 4
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229920000459 Nitrile rubber Polymers 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 150000001451 organic peroxides Chemical class 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- KOMNUTZXSVSERR-UHFFFAOYSA-N 1,3,5-tris(prop-2-enyl)-1,3,5-triazinane-2,4,6-trione Chemical compound C=CCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O KOMNUTZXSVSERR-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 2
- 229940106691 bisphenol a Drugs 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 235000012241 calcium silicate Nutrition 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 238000007046 ethoxylation reaction Methods 0.000 description 2
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000004611 light stabiliser Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920005650 polypropylene glycol diacrylate Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XKXIQBVKMABYQJ-UHFFFAOYSA-N tert-butyl hydrogen carbonate Chemical compound CC(C)(C)OC(O)=O XKXIQBVKMABYQJ-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- HGTUJZTUQFXBIH-UHFFFAOYSA-N (2,3-dimethyl-3-phenylbutan-2-yl)benzene Chemical compound C=1C=CC=CC=1C(C)(C)C(C)(C)C1=CC=CC=C1 HGTUJZTUQFXBIH-UHFFFAOYSA-N 0.000 description 1
- HGXJDMCMYLEZMJ-UHFFFAOYSA-N (2-methylpropan-2-yl)oxy 2,2-dimethylpropaneperoxoate Chemical compound CC(C)(C)OOOC(=O)C(C)(C)C HGXJDMCMYLEZMJ-UHFFFAOYSA-N 0.000 description 1
- ZMZHRHTZJDBLEX-UHFFFAOYSA-N (2-phenylphenyl) prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1C1=CC=CC=C1 ZMZHRHTZJDBLEX-UHFFFAOYSA-N 0.000 description 1
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- UNEATYXSUBPPKP-UHFFFAOYSA-N 1,3-Diisopropylbenzene Chemical compound CC(C)C1=CC=CC(C(C)C)=C1 UNEATYXSUBPPKP-UHFFFAOYSA-N 0.000 description 1
- ZIJDEADTCQKATN-UHFFFAOYSA-N 1,3-bis(prop-2-enyl)-5-propyl-1,3,5-triazinane-2,4,6-trione Chemical compound CCCN1C(=O)N(CC=C)C(=O)N(CC=C)C1=O ZIJDEADTCQKATN-UHFFFAOYSA-N 0.000 description 1
- XSZYESUNPWGWFQ-UHFFFAOYSA-N 1-(2-hydroperoxypropan-2-yl)-4-methylcyclohexane Chemical compound CC1CCC(C(C)(C)OO)CC1 XSZYESUNPWGWFQ-UHFFFAOYSA-N 0.000 description 1
- OGBWMWKMTUSNKE-UHFFFAOYSA-N 1-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CCCCCC(OC(=O)C(C)=C)OC(=O)C(C)=C OGBWMWKMTUSNKE-UHFFFAOYSA-N 0.000 description 1
- ZHKBLALOBMBJLL-UHFFFAOYSA-N 1-hexylperoxyhexane Chemical group CCCCCCOOCCCCCC ZHKBLALOBMBJLL-UHFFFAOYSA-N 0.000 description 1
- ZHJVTEQTDADLKP-UHFFFAOYSA-N 1-methyl-4-(4-methylphenyl)peroxybenzene Chemical compound C1=CC(C)=CC=C1OOC1=CC=C(C)C=C1 ZHJVTEQTDADLKP-UHFFFAOYSA-N 0.000 description 1
- DWPPUQSZUBGEPH-UHFFFAOYSA-N 10,11-dioctylicosane Chemical compound CCCCCCCCCC(CCCCCCCC)C(CCCCCCCC)CCCCCCCCC DWPPUQSZUBGEPH-UHFFFAOYSA-N 0.000 description 1
- IKYOPEFFRGULSE-UHFFFAOYSA-N 12-hydroxydodecyl 3-methylbut-2-enoate Chemical compound CC(=CC(=O)OCCCCCCCCCCCCO)C IKYOPEFFRGULSE-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- VSDZUDQPXOUABS-UHFFFAOYSA-N 2,3-dihydroxypropyl 3-methylbut-2-enoate Chemical compound CC(=CC(=O)OCC(O)CO)C VSDZUDQPXOUABS-UHFFFAOYSA-N 0.000 description 1
- FTALTLPZDVFJSS-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl prop-2-enoate Chemical compound CCOCCOCCOC(=O)C=C FTALTLPZDVFJSS-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- BEWCNXNIQCLWHP-UHFFFAOYSA-N 2-(tert-butylamino)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCNC(C)(C)C BEWCNXNIQCLWHP-UHFFFAOYSA-N 0.000 description 1
- VETIYACESIPJSO-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound OCCOCCOCCOC(=O)C=C VETIYACESIPJSO-UHFFFAOYSA-N 0.000 description 1
- PTJWCLYPVFJWMP-UHFFFAOYSA-N 2-[[3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)COCC(CO)(CO)CO PTJWCLYPVFJWMP-UHFFFAOYSA-N 0.000 description 1
- IQQVCMQJDJSRFU-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.CCC(CO)(CO)CO IQQVCMQJDJSRFU-UHFFFAOYSA-N 0.000 description 1
- MIRQGKQPLPBZQM-UHFFFAOYSA-N 2-hydroperoxy-2,4,4-trimethylpentane Chemical compound CC(C)(C)CC(C)(C)OO MIRQGKQPLPBZQM-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- TVWBTVJBDFTVOW-UHFFFAOYSA-N 2-methyl-1-(2-methylpropylperoxy)propane Chemical compound CC(C)COOCC(C)C TVWBTVJBDFTVOW-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- VFZKVQVQOMDJEG-UHFFFAOYSA-N 2-prop-2-enoyloxypropyl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(=O)C=C VFZKVQVQOMDJEG-UHFFFAOYSA-N 0.000 description 1
- DWTKNKBWDQHROK-UHFFFAOYSA-N 3-[2-(2-methylprop-2-enoyloxy)ethyl]phthalic acid Chemical compound CC(=C)C(=O)OCCC1=CC=CC(C(O)=O)=C1C(O)=O DWTKNKBWDQHROK-UHFFFAOYSA-N 0.000 description 1
- BIRCHUKFJGBFFJ-UHFFFAOYSA-N 3-docosylpyrrole-2,5-dione Chemical compound CCCCCCCCCCCCCCCCCCCCCCC1=CC(=O)NC1=O BIRCHUKFJGBFFJ-UHFFFAOYSA-N 0.000 description 1
- QZPSOSOOLFHYRR-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate Chemical compound OCCCOC(=O)C=C QZPSOSOOLFHYRR-UHFFFAOYSA-N 0.000 description 1
- BLHDYAXSQWGYSM-UHFFFAOYSA-N 3-octadecylpyrrole-2,5-dione Chemical compound CCCCCCCCCCCCCCCCCCC1=CC(=O)NC1=O BLHDYAXSQWGYSM-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- VSZARHUCMHICLD-UHFFFAOYSA-N 4,6-bis(prop-2-enoxy)-1h-1,3,5-triazin-2-one Chemical group C=CCOC=1N=C(OCC=C)NC(=O)N=1 VSZARHUCMHICLD-UHFFFAOYSA-N 0.000 description 1
- MKTOIPPVFPJEQO-UHFFFAOYSA-N 4-(3-carboxypropanoylperoxy)-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)OOC(=O)CCC(O)=O MKTOIPPVFPJEQO-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- YPIFGDQKSSMYHQ-UHFFFAOYSA-N 7,7-dimethyloctanoic acid Chemical compound CC(C)(C)CCCCCC(O)=O YPIFGDQKSSMYHQ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKJADYKTJJGKDX-UHFFFAOYSA-N Butyl pentanoate Chemical compound CCCCOC(=O)CCCC OKJADYKTJJGKDX-UHFFFAOYSA-N 0.000 description 1
- BXTGXWKSRIJYFE-ODZAUARKSA-N C(\C=C/C(=O)O)(=O)O.C(C)(C)(C)OO Chemical compound C(\C=C/C(=O)O)(=O)O.C(C)(C)(C)OO BXTGXWKSRIJYFE-ODZAUARKSA-N 0.000 description 1
- CKIVQKYOEOUZDJ-UHFFFAOYSA-N CC(=CC(=O)O)C.CO.CO Chemical compound CC(=CC(=O)O)C.CO.CO CKIVQKYOEOUZDJ-UHFFFAOYSA-N 0.000 description 1
- HAENSMVSXSVRDM-UHFFFAOYSA-N CC(=CC(=O)OCCOCCO)C Chemical compound CC(=CC(=O)OCCOCCO)C HAENSMVSXSVRDM-UHFFFAOYSA-N 0.000 description 1
- FVLVWBKHSDWKMM-UHFFFAOYSA-N CC(C)(C)OO.CCCCC(CC)C(O)=O Chemical compound CC(C)(C)OO.CCCCC(CC)C(O)=O FVLVWBKHSDWKMM-UHFFFAOYSA-N 0.000 description 1
- GWIDQKWZSRPDQO-UHFFFAOYSA-N C[NH+](c1ccccc1)[O-] Chemical compound C[NH+](c1ccccc1)[O-] GWIDQKWZSRPDQO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical class CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- ZCZFEIZSYJAXKS-UHFFFAOYSA-N [3-hydroxy-2,2-bis(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COC(=O)C=C ZCZFEIZSYJAXKS-UHFFFAOYSA-N 0.000 description 1
- SSOONFBDIYMPEU-UHFFFAOYSA-N [3-hydroxy-2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propyl] prop-2-enoate Chemical compound OCC(CO)(CO)COCC(CO)(CO)COC(=O)C=C SSOONFBDIYMPEU-UHFFFAOYSA-N 0.000 description 1
- FHLPGTXWCFQMIU-UHFFFAOYSA-N [4-[2-(4-prop-2-enoyloxyphenyl)propan-2-yl]phenyl] prop-2-enoate Chemical compound C=1C=C(OC(=O)C=C)C=CC=1C(C)(C)C1=CC=C(OC(=O)C=C)C=C1 FHLPGTXWCFQMIU-UHFFFAOYSA-N 0.000 description 1
- NOKSMMGULAYSTD-UHFFFAOYSA-N [SiH4].N=C=O Chemical compound [SiH4].N=C=O NOKSMMGULAYSTD-UHFFFAOYSA-N 0.000 description 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid group Chemical group C(C1=CC=CC=C1)(=O)O WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 150000004054 benzoquinones Chemical class 0.000 description 1
- UBPJIDNMDZEGBK-UHFFFAOYSA-N benzoyl benzenecarboperoxoate formic acid Chemical compound C(C1=CC=CC=C1)(=O)OOC(C1=CC=CC=C1)=O.C(=O)O UBPJIDNMDZEGBK-UHFFFAOYSA-N 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical compound C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- MRIZMKJLUDDMHF-UHFFFAOYSA-N cumene;hydrogen peroxide Chemical compound OO.CC(C)C1=CC=CC=C1 MRIZMKJLUDDMHF-UHFFFAOYSA-N 0.000 description 1
- 150000007973 cyanuric acids Chemical class 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- RYRWDTRXCNOMOJ-UHFFFAOYSA-N dibutan-2-yl carbonate Chemical compound CCC(C)OC(=O)OC(C)CC RYRWDTRXCNOMOJ-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- JMPVESVJOFYWTB-UHFFFAOYSA-N dipropan-2-yl carbonate Chemical compound CC(C)OC(=O)OC(C)C JMPVESVJOFYWTB-UHFFFAOYSA-N 0.000 description 1
- VUPKGFBOKBGHFZ-UHFFFAOYSA-N dipropyl carbonate Chemical compound CCCOC(=O)OCCC VUPKGFBOKBGHFZ-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- NBRNULGZTFWZPN-UHFFFAOYSA-N ethyl 4-oxo-4-prop-2-enoylperoxybutanoate Chemical compound CCOC(=O)CCC(=O)OOC(=O)C=C NBRNULGZTFWZPN-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical group C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate Chemical compound [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- RWGFKTVRMDUZSP-UHFFFAOYSA-N isopropyl-benzene Natural products CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- OTRIMLCPYJAPPD-UHFFFAOYSA-N methanol prop-2-enoic acid Chemical compound OC.OC.OC(=O)C=C.OC(=O)C=C OTRIMLCPYJAPPD-UHFFFAOYSA-N 0.000 description 1
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- CBFCDTFDPHXCNY-UHFFFAOYSA-N octyldodecane Natural products CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- YNXCGLKMOXLBOD-UHFFFAOYSA-N oxolan-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CCCO1 YNXCGLKMOXLBOD-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 1
- AHIHJODVQGBOND-UHFFFAOYSA-N propan-2-yl hydrogen carbonate Chemical compound CC(C)OC(O)=O AHIHJODVQGBOND-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- WJXKWIFHRZWPET-UHFFFAOYSA-N tert-butyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC(C)(C)C WJXKWIFHRZWPET-UHFFFAOYSA-N 0.000 description 1
- WLUUTGIJNRNHRF-UHFFFAOYSA-N tert-butyl heptanoate Chemical compound CCCCCCC(=O)OC(C)(C)C WLUUTGIJNRNHRF-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229940113165 trimethylolpropane Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/36—Amides or imides
- C08F222/40—Imides, e.g. cyclic imides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D135/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least another carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
- C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Polymerisation Methods In General (AREA)
Abstract
本发明的目的在于提供一种在电子装置的安装步骤中于工作期间不出现问题的组合物,甚至在被加热时亦如此。本发明涉及一种底部填充组合物,所述底部填充组合物包含(a)(甲基)丙烯酸化合物和(c)具有烯丙基的异氰脲酸。
Description
技术领域
本发明涉及一种可用于制备电子装置——特别是半导体装置——的组合物及其用途。
背景技术
作为一项用于半导体芯片的安装技术,倒装芯片技术是已知的,其中通过该技术将半导体芯片直接连接到衬底上。在倒装芯片安装中,通过在半导体芯片的元件形成表面侧上形成的电极(凸起(bump))连接半导体芯片和电路衬底。在该情况下,为了接合部件的加固和连接件可靠性的提高,一般在半导体芯片和接线衬底之间填充底部填充密封剂(其为粘合剂组合物)。
作为一种底部填充组合物,已知含环氧基化合物和/或(甲基)丙烯酸化合物等的粘合剂组合物(如专利文献1)。在这些中,利用(甲基)丙烯酸化合物的自由基固化反应的组合物,相对于含环氧基化合物的组合物,具有反应速率更高并且可提高制备电子装置的效率的优点。
同时,根据需要将各种添加剂(例如抗氧化剂和金属离子粘合剂)混合入底部填充组合物中。通过这种方式,可提高电子装置的质量,例如提高机械强度、粘合性、交联速率等(专利文献2)。
作为一种用于填充底部填充密封剂的方法,已知以下两种方法:其中首先将液体组合物施加至接线衬底上、然后安装半导体芯片以同时进行电极连接和密封的方法;其中首先建立半导体芯片上的电极和衬底间的电连接、然后将液体粘合剂组合物施加至芯片的一侧或多侧上以通过毛细管作用来密封接线衬底和半导体芯片间的间隙的方法(所谓的毛细管方法)等。通过所述方法中的任何一种,需要将液体粘合剂组合物施加至整个接线衬底上,在半导体芯片和接线衬底间的间隙中均匀地填充液体粘合剂组合物等。因此,有时,按需将注射器、衬底等加热至室温或更高温度以提高粘合剂组合物的流动性。
但是,当使用利用自由基固化反应的底部填充密封剂时,存在这样的问题:在进行密封前,底部填充密封剂组合物的固化反应可能有时过早进行,从而导致电极连接不足或工作效率差。当粘合剂组合物处于如上所述的室温或更高温度的状态下时容易发生这些问题。为了克服这些问题,在底部填充密封剂组合物中混入添加剂或降低工作温度,但是仍然不够。因此,仍在寻求对用于电子装置的粘合剂组合物进一步改善。
引用列表
专利文献
专利文献1:日本专利特开(Laid-Open)No.2010-226098
专利文献2:日本专利特开No.H08(1996)-213517
发明内容
技术问题
本发明的一个目的是解决在使用常规粘合组合物剂组合物中的上述问题,以及提供一种提高电子装置的生产率的组合物。此外,本发明的另一个目的是提供含有该组合物的电子装置或电器。
解决技术问题所采取的技术方案
本发明涉及以下方案。
1、底部填充密封剂组合物,所述组合物包含:
(a)(甲基)丙烯酸化合物和
(c)具有烯丙基的异氰脲酸。
2、根据上述第1项的组合物,其还包含(b)马来酰亚胺化合物。
3、根据上述第2项的组合物,其中所述马来酰亚胺化合物(b)包括双马来酰亚胺。
4、根据上述第1-3项中任一项的组合物,还包含自由基引发剂。
5、根据上述第1-4项中任一项的组合物,所述组合物包含:
基于组合物的总重的10-90重量%的(a)(甲基)丙烯酸化合物和
基于组合物的总重的0.001-20重量%的(c)具有烯丙基的异氰脲酸。
6、根据上述第2-5项中任一项的组合物,所述组合物包含基于组合物的总重的0.1-50重量%的(b)马来酰亚胺化合物。
7、根据上述第1-6项中任一项的组合物,其用于倒装芯片安装中。
8、电子装置,所述电子装置包含根据上述第1-7项中任一项的组合物的固化产物。
9、电器,所述电器包含根据上述第8项的电子装置。
发明的有益效果
根据本发明的组合物在室温或更高温度且80℃或更低温度下的固化反应的进行可被充分地抑制。因此,本发明的组合物不会造成在半导体芯片的倒装芯片安装过程中有缺陷的电极连接,并且可确保在安装过程中足够的工作时间。结果,可提供更高质量的产品而不降低通过倒装芯片安装来制造电子装置的生产效率。
具体实施方式
根据本发明的用于电子装置的组合物至少包含
(a)(甲基)丙烯酸化合物,和
(c)具有烯丙基的异氰脲酸。以下将对各成分进行描述。
<(a)(甲基)丙烯酸化合物>
根据本发明使用的(甲基)丙烯酸化合物具有一个以上(甲基)丙烯酰基基团,并且优选具有两个以上(甲基)丙烯酰基基团。通常,优选的是,除了具有两个(甲基)丙烯酰基基团的化合物之外,还根据需要使用具有一个(甲基)丙烯酰基基团的化合物和/或具有三个以上(甲基)丙烯酰基基团的化合物。此外,所述(甲基)丙烯酸化合物可以是单体或低聚物。
尽管对可用于本发明的(甲基)丙烯酸化合物没有特别限定,但是具有(甲基)丙烯酰基基团的单官能化合物的实例包括苯基苯酚丙烯酸酯、甲氧基聚乙烯丙烯酸酯、琥珀酸丙烯酰氧基乙酯、脂族丙烯酸酯、甲基丙烯酰氧基乙基苯二甲酸、苯氧基乙二醇甲基丙烯酸酯、脂族甲基丙烯酸酯、β-羧基乙基丙烯酸酯、丙烯酸异冰片酯、丙烯酸异丁酯、丙烯酸叔丁酯、丙烯酸羟乙酯、丙烯酸羟丙酯、丙烯酸二氢化环戊二乙酯、甲基丙烯酸环己酯、甲基丙烯酸叔丁酯、甲基丙烯酸二甲基氨基乙酯、甲基丙烯酸二乙基氨基乙酯、甲基丙烯酸叔丁基氨基乙酯、丙烯酸4-羟基丁酯、丙烯酸四氢化糠酯、丙烯酸苄酯、乙基卡必醇丙烯酸酯、丙烯酸苯氧基乙酯、和甲氧基三乙二醇丙烯酸酯。具有两个以上的(甲基)丙烯酰基基团的化合物的实例包括己二醇二甲基丙烯酸酯、甲基丙烯酸羟基丙基酰氧基丙酯、己二醇二丙烯酸酯、聚氨酯丙烯酸酯(urethane acrylate)、环氧丙烯酸酯、双酚A型环氧丙烯酸酯、改性环氧丙烯酸酯、经脂肪酸改性的环氧丙烯酸酯、经胺改性的双酚A型环氧丙烯酸酯、甲基丙烯酸烯丙酯、乙二醇二甲基丙烯酸酯、二乙二醇二甲基丙烯酸酯、乙氧基化的双酚A二甲基丙烯酸酯、三环癸烷二甲醇二甲基丙烯酸酯、丙三醇二甲基丙烯酸酯、聚丙二醇二丙烯酸酯、丙氧基化的乙氧基化的双酚A二丙烯酸酯、9,9-双(4-(2-丙烯酰氧基乙氧基)苯基)芴、三环癸烷二丙烯酸酯、二丙二醇二丙烯酸酯、聚丙二醇二丙烯酸酯、丙氧基化的新戊二醇二丙烯酸酯、三环癸烷二甲醇二丙烯酸酯、1,12-十二烷二醇二甲基丙烯酸酯、三羟甲基丙烷三甲基丙烯酸酯、二季戊四醇(dipentaerythto1)聚丙烯酸酯、二季戊四醇(dipentaerythto1)六丙烯酸酯、三羟甲基丙烷三丙烯酸酯、三羟甲基丙烷乙氧基三丙烯酸酯、聚醚三丙烯酸酯、丙三醇丙氧基三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇乙氧基四丙烯酸酯、双三羟甲基丙烷四丙烯酸酯、单季戊四醇丙烯酸酯、二季戊四醇丙烯酸酯、三季戊四醇丙烯酸酯、聚季戊四醇丙烯酸酯,和季戊四醇三丙烯酸酯。
可用于本发明的(甲基)丙烯酸化合物的市售产品的实例包括来自Sartomer,Co.,Inc.的SR&CD系列的官能单体、CN系列的官能环氧丙烯酸酯低聚物和官能聚氨酯丙烯酸酯低聚物;来自Kyoeisha Chemical Co.,Ltd.的Light Ester系列,和Light Acrylate系列;以及来自Shin-NakamuraChemical Co.,Ltd的NK Ester。
所述(甲基)丙烯酸化合物可以单独使用或者以它们中两种以上的组合使用。
根据本发明的(甲基)丙烯酸化合物的含量可以根据使用目的进行调整,并且优选基于化合物的总重的10-90重量%,并且更优选20-60重量%。如果(甲基)丙烯酸酯的含量在该范围内,在固化前组合物的粘度是低的,并且可加工性以及固化后的强度较好。
<(c)具有烯丙基的异氰脲酸>
根据本发明的组合物含有以下式(II)所表示的异氰脲酸。
在式(II)中,R1、R2和R3彼此独立地表示氢或具有1-50个碳原子的取代基,并且R1、R2和R3中至少1个为具有-CH2-CH=CH2所表示的烯丙基的取代基。
虽然对具有烯丙基的取代基没有特别限定,但其实例包括:
其中,n表示1以上的整数,优选1-18的整数,更优选1-10的整数,并且特别优选1。
用于根据本发明的组合物的异氰脲酸包含至少1个烯丙基,并且也可包括2个以上或3个以上烯丙基。在3个取代基R1、R2和R3中至少1个取代基是包含烯丙基的取代基,并且2个或3个取代基可以包含烯丙基。此外,在单个取代基中可以包含多个烯丙基。
当R1、R2和R3中的任一个是不包含烯丙基的取代基时,该取代基是氢或具有1-50个碳原子的取代基,并且只要对本发明的目的没有损害,则并无特别限定。不具有烯丙基的取代基的实例包括具有1-50个碳原子的烷基,优选具有1-20个碳原子的烷基,例如甲基、乙基、丙基和丁基、苯基、苄基、苯乙基、乙烯基和缩水甘油基,
其中n表示0-19的整数,
虽然对本发明中所用的具有烯丙基的异氰脲酸没有特别限定,但其实例包括异氰脲酸三烯丙酯、异氰脲酸三甲代烯丙酯、二烯丙基单缩水甘油基异氰脲酸酯、1-烯丙基-3,5-二缩水甘油基异氰脲酸酯、异氰脲酸二烯丙酯和异氰脲酸二烯丙基丙酯。
根据本发明使用的具有烯丙基的异氰脲酸的市售产品的实例包括Nippon Kasei Chemical Co.,Ltd的TAIC(注册商标)系列;以及来自ShikokuChemicals Corporation的异氰脲酸衍生物,例如MeDAIC、DA-MGIC和MA-DGIC。
所述具有烯丙基的异氰脲酸可以单独使用或者以其中两种以上的组合使用。
当根据本发明的组合物用于制备半导体装置时,例如,如下所述地将所述组合物施加至接线衬底上。在这种情况下,为了提高组合物的流动性,有时将组合物置于室温或更高温度的状态。此时,由于根据本发明的组合物含有具有烯丙基的异氰脲酸,所以充分抑制固化反应的进行,并且不降低在随后的安装过程中的工作效率。正如本发明的发明人认定的,这是因为在电子装置的安装过程中具有烯丙基的异氰脲酸使由(甲基)丙烯酸化合物产生的自由基稳定,从而抑制自由基聚合反应的进行。此外,根据本发明的组合物在制备电子装置的另一过程中的反应、或最终获得的粘合剂的物理性能方面不会引起任何问题。
虽然对根据本发明的组合物中具有烯丙基的异氰脲酸的含量没有特别限定,但是其基于组合物的总重,优选0.001-20重量%、并且更优选0.1-10重量%。
<(b)马来酰亚胺化合物>
根据本发明的组合物除了(a)(甲基)丙烯酸化合物和(c)具有烯丙基的异氰脲酸之外,还可优选含有(b)马来酰亚胺化合物。尽管对包含于根据本发明的组合物中包含的马来酰亚胺化合物没有特别限定,但其实例包括以下化合物。
马来酰亚胺化合物在一个分子中具有至少1个——优选1个或2个——以下部分(I)。
在该式中,R1和R2表示氢或具有1-6个碳原子的烷基;或R1和R2一起表示具有2-6个碳原子的亚烷基。优选R1和R2都是氢;或R1和R2一起表示1,4-亚丁基。
所述马来酰亚胺化合物优选在室温下是液体,因此所述部分(I)键接到使马来酰亚胺化合物为液体的基团,例如具有支化的烷基、亚烷基、亚烷基氧化物、亚烷基羧基或亚烷基酰胺结构的有机基团,其具有足够长度和支链使马来酰亚胺化合物为液体。所述马来酰亚胺化合物可以具有1个或2个以上结构(I)。具有这些基团中的2个的化合物是双马来酰亚胺化合物。此外,即使一种马来酰亚胺化合物不是液体,但如果当将其与另一种马来酰亚胺化合物混合或与另一成分混合时组合物变为液体,则该马来酰亚胺化合物也是可以使用的。
其中部分(I)与烷基或亚烷基(这些基团可具有双键或饱和的脂族环)键接的马来酰亚胺化合物的实例包括以下化合物。
特别优选的实例包括硬脂基马来酰亚胺、油基马来酰亚胺、山嵛基(behenyl)马来酰亚胺和10,11-二辛基二十碳烷的1,20-双马来酰亚胺,以及它们的组合。10,11-二辛基二十碳烷的1,20-双马来酰亚胺衍生物可以产品名称X-BMI从Henkel AG&Co.获得,其通过根据美国专利No.5973166的方法由1,20-二氨基-10,11-二辛基-二十碳烷和/或其环状的异构体的二胺来合成(美国专利No.5973166的全部公开内容通过援引加入的方式纳入本文)。X-BMI含有1,20-双马来酰亚胺-10,11-二辛基-二十碳烷[以式(X-1)表示的化合物]、1-亚庚基马来酰亚胺-2-亚辛基马来酰亚胺-4-辛基-5-庚基环己烷[以式(X-2)表示的化合物]、1,2-二亚辛基马来酰亚胺-3-辛基-4-己基环己烷[以式(X-3)表示的化合物]等中的一个或者两个或多个。也可以优选单独使用式(X-1)至(X-3)表示的双马来酰亚胺化合物。
其中部分(I)与具有亚烷基氧化物结构的基团键接的马来酰亚胺化合物的实例包括以下化合物。
在该式中,R为亚烷基,优选亚乙基或1,2-亚丙基,n为2-约40的整数,其中优选选择使该化合物为液体的n的整数数值和分布。该化合物可以LUMICURE(注册商标)MIA200从DIC Corporation得到。
另一种可用的马来酰亚胺化合物的实例包括以下式表示的化合物(3,4,5,6-四氢邻苯二甲酰亚胺乙基丙烯酸酯)。
上述的马来酰亚胺化合物可以单独使用或者以其中两种以上的组合使用。
根据本发明的马来酰亚胺化合物的含量,基于组合物的总重,优选为0-50重量%、更优选0.1-50重量%,并且进一步更优选为1-20重量%。如果马来酰亚胺化合物的含量在该范围内,则固化速率变得更好。
同时,当组合物含有根据本发明的马来酰亚胺时,通过加热至预定温度,组合物中的(甲基)丙烯酸化合物与马来酰亚胺化合物通过自由基反应聚合。在该情况下,只有1种化合物可聚合形成均聚物,或两种以上化合物可聚合形成共聚物。
<填料>
根据本发明的组合物可含有填料。通过混合填料,可获得具有低的线膨胀系数、表现出良好的尺寸稳定性并且提高的耐燃性的用于电子装置的组合物。作为填料,根据使用目的可选择绝缘性无机填料或导电的无机填料。绝缘无机填料的实例包括二氧化硅、硅酸钙、氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、氧化镁、氮化铝和氮化硼,并且特别优选二氧化硅。导电的无机填料的实例包括金属和炭黑。
此外,还可以使用根据需要进行表面改性的填料。市售产品的实例包括来自Mitsubishi Chemical Corporation的“Mitsubishi carbon black”系列;来自Asahi Carbon Co.,Ltd.的“Asahi”系列;来自Kawai Lime Ind.Co.,Ltd.的硅酸钙“PCM Lite”系列、氢氧化铝“ALH”系列,以及氧化铝基“Celasule”;来自Sakai Chemical Industry Co.,Ltd.的氧化钛“STR”系列、二氧化硅“Sciqus系列”、氧化锌“FINEEX系列”、氧化镁“SMO系列”和氧化锆“STR系列”;来自Admatechs Company Limited的二氧化硅、氧化的氧化铝“ADMAFINE”系列;来自Nissan Chemical Ind.,Ltd.的二氧化硅“SNOWTEX”系列;以及来自C.I.Kasei Co.,Ltd.的含二氧化硅和氧化铝的金属氧化物“NanoTek”系列。
当根据本发明的组合物用于制备例如半导体装置时,填料的平均粒径优选小于半导体芯片元件形成表面和接线衬底之间的间隙尺寸。如果填料的平均粒径太大,则填料在制备半导体装置时可能被夹在金属连接件之间,使得可能无法建立良好的电可靠性,或芯片可能破裂。
尽管填料的混合量可根据使用目的调整,但是优选例如基于粘合剂组合物的总重的1-99重量%,并且更优选10-80重量%。如果所述含量在该范围内,可得到具有充分的填料添加效果以及处理中无任何问题的粘度的组合物。
<自由基引发剂>
根据本发明的组合物优选含有自由基引发剂。作为根据发明使用的自由基引发剂,优选是热自由基引发剂。作为热自由基引发剂,优选是有机过氧化物,并且选择在适当温度下产生自由基的有机过氧化物。
尽管对自由基引发剂没有特别限定,但是其实例包括二异丁基过氧化物、过氧化新癸酸枯烯酯、过氧化碳酸二正丙酯、过氧化碳酸二异丙酯、过氧化碳酸二仲丁酯、过氧化新癸酸1,1,3,3-四甲基丁酯、二(4-叔丁基环己基)过氧化二碳酸酯、二(2-乙基己基)过氧化二碳酸酯、过氧化新癸酸叔己酯、过氧化新癸酸叔丁酯、过氧化新庚酸叔丁酯、过氧化新戊酸叔己酯、过氧化新戊酸叔丁酯、二(3,5,5-三甲基己酰基)过氧化物、二月桂酰过氧化物、1,1,3,3-四甲基丁基过氧化-2-乙基己酸酯、二琥珀酸过氧化物、2,5-二甲基-2,5-二(2-乙基己酰基过氧化)己烷、叔己基过氧化2-乙基己酸酯、二(4-甲基苯甲酰)过氧化物、叔丁基过氧化-2-乙基己酸酯、二苯甲酰过氧化物、1,1-二(叔丁基过氧化)-2-甲基环己烷、1,1-二(叔己基过氧化)-3,3,5-三甲基环己烷、1,1-二(叔己基过氧化)环己烷、1,1-二(叔丁基过氧化)环己烷、2,2-二(4,4-二-(叔丁基过氧化)环己基)丙烷、叔己基过氧化异丙基单碳酸酯、叔丁基过氧化马来酸、过氧化-3,5,5-三甲基己酸叔丁酯、过氧化月桂酸叔丁酯、过氧化异丙基单碳酸叔丁酯、过氧化2-乙基己基单碳酸叔丁酯、过氧化苯甲酸叔己酯、2,5-二-甲基-2,5-二(苯甲酰基过氧化)己烷、过氧化乙酸叔丁酯、2,2-二(叔丁基过氧化)丁烷、过氧化苯甲酸叔丁酯、4,4-二-(叔丁基过氧化)戊酸正丁酯、二(2-叔丁基过氧化异丙基)苯、二枯烯基过氧化物、二-叔己基过氧化物、叔丁基枯烯基过氧化物、二-叔丁基过氧化物、萜烷过氧化氢、2,5-二甲基-2,5-二(叔丁基过氧化)己烷-3,3,5-二异丙基苯氢化过氧化物、1,1,3,3-四甲基丁基氢化过氧化物、枯烯氢化过氧化物、叔丁基氢化过氧化物,和2,3-二甲基-2,3-二苯基丁烷。有机过氧化物可购自Akzo Nobel N.V.、Gio specialities Chemical、Arkema S.A.、NOF Corporation、Kayaku AkzoCorporation等。其可以单独使用或者以它们中两种以上的组合使用。
自由基引发剂的混合量优选基于组合物总重的0.01-10重量%,并且更优选0.1-5重量%。如果自由基引发剂的混合量在该范围内,则在施加组合物时不会发生不稳定的问题或固化时间延长的问题。
除了前述的成分之外,根据本发明的组合物还可根据需要含有添加剂,例如硅烷偶联剂、橡胶成分、抗氧化剂、光稳定剂、自由基稳定剂,和表面活性剂。硅烷偶联剂和橡胶成分可有利地提高组合物的粘合性质、缓和应力和减少固化反应产物的翘曲。同时,可使用抗氧化剂和自由基稳定剂以延长适用期。可以添加表面活性剂用于在涂布中消除泡沫,或用于提高待涂布的目标物的润湿性以及流平性。
通过向组合物中添加硅烷偶联剂,可提高粘合剂的粘合性质。
虽然对硅烷偶联剂没有特别限定,但是其实例包括氨基硅烷偶联剂、环氧硅烷偶联剂、酰脲硅烷偶联剂、异氰酸酯硅烷偶联剂、乙烯基硅烷偶联剂、(甲基)丙烯酸硅烷偶联剂和酮亚胺硅烷偶联剂。并且在这些中,优选异氰酸酯硅烷偶联剂、(甲基)丙烯酸硅烷偶联剂和环氧硅烷偶联剂。硅烷偶联剂可购自Dow Coming Toray Silicone Co.,Ltd.、Shin-Etsu Silicone、Matsumoto Fine Chemical Co.,Ltd.、Tokyo Chemical Industry Co.,Ltd.等。
虽然硅烷偶联剂的混合量可以适当地调整,但是其为例如优选基于组合物的总重的0-10重量%,并且更优选0-5重量%。如果硅烷偶联剂的含量太高,则在倒装芯片过程中热压接合期间硅烷偶联剂挥发而产生空隙。
虽然对橡胶没有特别限定,但是其实例包括:工业橡胶,例如丙烯酸橡胶、腈橡胶、丁二烯橡胶和腈丁二烯橡胶,以及用于橡胶的低分子量交联剂。工业橡胶的市售产品的实例包括:来自Negami Chemical Industrial Co.,Ltd.的“Paracron RP”系列,来自Ganz Chemical Co.,Ltd.的“Staphyloid IM”系列和“StaphyloidAC”系列,来自Zeon Kasei Co.,Ltd.的“Zeon”系列,以及来自Mitsubishi Rayon Co.,Ltd.的“METABLEN C/E/W/S/SX/SRX”系列。用于橡胶的低分子量交联剂的市售产品的实例包括来自Sartomer的“Ricon”系列;来自Idemitsu Kosan Co.,Ltd.的“Poly bd”和“Poly ip”系列、“EPOL”系列,以及“Krasol”系列;来自Nippon Soda Co.,Ltd.的“NISSO-PB”。这些产品可以单独使用或以其中两种以上的组合使用。
此外,也可使用其中预先已分散橡胶粒子的丙烯酸树脂的市售产品,其实例包括来自Negami Chemical Industrial Co.,Ltd.的Paracron SN-50、AS-3000、ME-2000、W-1163、W-248E、W-197C、PRE-COAT200和PANLONS-2012。
尽管可适当调整橡胶的混合量,但其例如优选基于粘合剂组合物的总重的0-30重量%、并且更优选0-20重量%。如果橡胶含量太高,则粘合剂组合物的粘度提高太多,产生可能使处理性能变差、或其他成分可能会难以混合、或粘合剂的粘合性可能变差的问题。
抗氧化剂和自由基稳定剂的实例包括氢醌、苯醌和受阻酚;光稳定剂的实例包括苯并三唑-基、三÷-基、二苯甲酮-基、苯甲酸酯-基,以及受阻胺-基紫外线吸收剂。可以根据使用目的从市售产品的目录中选择表面活性剂。
<用于电子装置的组合物的制备方法>
根据本发明的组合物可通过将以上指定的各个成分以及按需存在的溶剂均匀混合而获得。对于组合物仅要求调节其粘度,只要它可通过涂布器(例如分配器)来进行施用:并且所述组合物也可以是无溶剂的。还可以通过组合物中化合物的选择、或通过调整它们的混合量来调节粘度。根据本发明的组合物可通过均匀捏合预定量的各个成分来制备,所述捏合通过但不限于单独或以组合方式使用公知的各种捏合机器(例如均匀分散机(homodisperser)、通用混合机、班伯里机、捏合机、双辊密炼机、三辊密炼机和挤出机)来进行。捏合可在各种条件例如常温或加热、常压、减压或增压、或惰性气流下进行。
根据本发明的用于电子装置的组合物优选用于电子装置,特别是用作包括但不限于半导体芯片的装置中的底部填充密封剂(密封剂)。
<电子装置及其制备方法>
接下来,将描述包含根据本发明的组合物的电子装置的制备方法。虽然对电子装置的制备方法没有特别限定,但是优选使用倒装芯片方法。在倒装芯片方法中,特别优选用根据本发明的组合物涂布接线衬底的电路表面。一种电子装置的制备方法包括例如
(1)涂布过程,其用于使用根据本发明的组合物涂布接线衬底的电路表面的,和
(2)接合和密封过程,其用于将半导体芯片置于已施加于接线衬底上的组合物上,并进行半导体芯片和接线衬底间的电连接,且对其间的间隙实施密封。以下将对各个过程进行描述。
<(1)涂布过程>
在涂布过程中,将根据本发明的组合物施加至接线衬底的电路表面上。可用所述组合物涂布接线衬底的整个表面或仅涂布其中待安装半导体芯片的部分表面。涂布方法的实例包括使用旋涂机、分配器、辊机等的涂布方法和丝网印刷。对此,可根据需要将在涂布过程中使用注射器、衬底等加热至室温或更高温度,以便于提高组合物的流动性。
<(2)接合和密封过程>
在接合和密封过程中,进行半导体元件和接线衬底间的电连接,并同时用根据本发明的组合物来密封半导体元件和接线衬底之间的间隙以制备电子装置。首先,将半导体芯片置于接线衬底上经粘合剂组合物涂布接线的部分上。在该情况下,将接线衬底的电路表面(即,在涂布过程中用组合物涂布的表面)和半导体芯片的元件形成表面对齐,使得两者彼此面对面。然后,进行热压接合。在热压接合后可再进行加热以固化粘合剂组合物。一般,作为热压接合和连接的方法,用倒装芯片接合器在位置调整后立即进行热压接合,或者在位置调整和临时安装后,在回流烘箱等中进行加热连接。在该情况下,进行适合于包装或密封方法的热曲线(thermal profile)。此外,对于芯片安装,不仅可使用倒装芯片接合机,还可代替性地使用可进行位置调整的芯片接合机(die bonder)等。
对热压接合的温度没有特别限定。当电极为焊料凸起(bump)或焊料帽凸起时,优选比其熔点高10-100℃的温度,优选200℃或更高的温度,并且更优选210-300℃。热压接合的持续时间优选为1-20秒,并且压力优选为0.1-7MPa。此外,如果为了在热压结合后完全固化粘合剂组合物而实施额外的加热,则例如优选在150-220℃下进行30-180分钟。
以上得到的电子装置可应用于利用半导体芯片的各种电器,例如手机、个人电脑和TV。
实施例
以下将通过实施例来更详细地描述本发明。但是,本发明并不限于以下实施例。
表1显示以下实施例和对比例中使用的化合物。
以下实施例和对比例中使用的仪器等如下:
(1)接线衬底:来自Waits Co.,Ltd.的WALTS-KIT MB50-0102JY_CR,衬垫(pad)是根据CuOSP规格。
(2)半导体芯片:来自Waits Co.,Ltd.的由铜柱和焊料构成的具有544个凸起的WALTS-TEG MB50-0101JY。
(将接线衬底(1)和半导体芯片(2)连接在一起形成菊花链,并当连接芯片中的所有凸起时,可建立电路通路。也就是说,如果544个凸起中的一个凸起不能连接,则通过电导通性(continuity)试验可以识别为电绝缘。)
<用于底部填充密封剂的粘合剂组合物的制备>
通过以下方法混合相关成分来制备粘合剂组合物。表2显示了在各个实施例和对比例中混合的化合物和其混合量(重量%)。
<实施例1>
(组合物的制备)
根据给定的混合量称出表2列出的化合物并通过三辊密炼机进行均匀捏合。将产物在真空中脱气以制备粘合剂组合物A。
在120℃的烘箱中加热接线电路衬底1小时后,用自动分配器将组合物A施加至接线电路衬底上,得到用粘合剂组合物A涂布的接线电路衬底B。
(电子装置的安装)
在接线电路衬底B制备后立刻(热暴露时间为0分钟、),或在80℃的加热板上放置15分钟、30分钟、45分钟、60分钟或90分钟后,调整半导体芯片和接线电路衬底B的位置,并用装配有脉冲热功能的倒装接合机将两者一起压制,随后在240℃下用脉冲加热进行热压接合。然后,在150℃的烘箱中将组合物A固化1小时以完成电子装置C。
(电导通性试验)
检查以上制备的电子装置C的电导通性,发现其在80℃的加热板上经过任何热暴露时间的电导通性均良好(表3、)。也就是说,半导体芯片上所有544个凸起均被连接。因此,证明实施例1的组合物维持足以加工的液态性,即使当实施例1的组合物放置在80℃的加热板上也如此。
[表3]
放置时间 | 电导通性 |
0分钟 | 良好 |
15分钟 | 良好 |
30分钟 | 良好 |
45分钟 | 良好 |
60分钟 | 良好 |
90分钟 | 良好 |
<实施例2-9>
除了将在组合物中混合的各成分变为如表2中所示的,通过与实施例1中相同的方法制备电子装置。同样在实施例2-9中,在80℃下将用组合物涂布的接线电路衬底放置0分钟、15分钟、30分钟、45分钟、60分钟和90分钟,然后制备电子装置,并检查它们的电导通性。结果证明实施例2-9中的组合物也维持足以加工的液态性,即使当实施例2-9中的组合物放置在80℃的加热板上也如此。
<对比例1>
除了将在组合物中混合的各成分变为如表2中所示的且不混合马来酰亚胺化合物和具有烯丙基的异氰脲酸,通过与实施例1中相同的方法制备电子装置。同样在对比例1中,将用组合物涂布的接线电路衬底在80℃下放置0分钟、15分钟、30分钟、45分钟、60分钟和90分钟,然后制备电子装置,并检查它们的电导通性。结果,如果不置于80℃下(热暴露时间为0min),则确认产生良好的电子装置的电导通性;但是在所有其他情况下,未建立电导通性(表4)。因此,证明对比例1的组合物的固化因在80℃放置而进行,并且不能建立良好的电导通性。
[表4]
放置时间 | 电导通性 |
0分钟 | 良好 |
15分钟 | 未连接 |
30分钟 | 未连接 |
45分钟 | 未连接 |
60分钟 | 未连接 |
90分钟 | 未连接 |
<对比例2>
除了将在组合物中混合的各成分变为如表2中所示的且不混合具有烯丙基的异氰脲酸,通过与实施例1中相同的方法制备电子装置。同样在对比例2中,如实施例1中地检查电导通性。结果,如果不置于80℃时(热暴露时间为0min),则确认制备的电子装置显示良好的电导通性;但是在所有其他情况下(在80℃放置),为建立电导通性。证明对比例2中的组合物的固化同样因在80℃放置而进行,也不能建立良好的电导通性。
Claims (9)
1.底部填充密封剂组合物,包含:
(a)(甲基)丙烯酸化合物和
(c)具有烯丙基的异氰脲酸。
2.权利要求1的组合物,还包含(b)马来酰亚胺化合物。
3.权利要求2的组合物,其中所述马来酰亚胺化合物(b)包括双马来酰亚胺。
4.权利要求1-3中任一项的组合物,还包含自由基引发剂。
5.权利要求1-4中任一项的组合物,包含:
基于组合物的总重的10-90重量%的(a)(甲基)丙烯酸化合物和
基于组合物的总重的0.001-20重量%的(c)具有烯丙基的异氰脲酸。
6.权利要求2-5中任一项的组合物,包含基于组合物的总重的0.1-50重量%的(b)马来酰亚胺化合物。
7.权利要求1-6中任一项的组合物,其用于倒装芯片安装中。
8.电子装置,包含权利要求1-7中任一项的组合物的固化产物。
9.电器,包含权利要求8的电子装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/070652 WO2013035205A1 (ja) | 2011-09-09 | 2011-09-09 | アンダーフィル用組成物 |
JPPCT/JP2011/070652 | 2011-09-09 | ||
PCT/JP2012/072985 WO2013035869A1 (ja) | 2011-09-09 | 2012-09-07 | アンダーフィル用組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103875065A true CN103875065A (zh) | 2014-06-18 |
CN103875065B CN103875065B (zh) | 2017-02-15 |
Family
ID=47831687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280049573.2A Expired - Fee Related CN103875065B (zh) | 2011-09-09 | 2012-09-07 | 底部填充组合物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9334429B2 (zh) |
EP (1) | EP2755233B1 (zh) |
JP (1) | JP6182069B2 (zh) |
KR (1) | KR101926898B1 (zh) |
CN (1) | CN103875065B (zh) |
SG (1) | SG11201400491UA (zh) |
TW (1) | TWI605111B (zh) |
WO (2) | WO2013035205A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105874030B (zh) * | 2014-01-02 | 2019-07-26 | 汉高知识产权控股有限责任公司 | 含有纳米微粒填料的膜 |
CN103980706B (zh) * | 2014-05-16 | 2017-01-11 | 广东生益科技股份有限公司 | 一种热固性树脂组合物及其用途 |
CN109312140B (zh) | 2016-05-31 | 2022-03-29 | 三菱瓦斯化学株式会社 | 树脂组合物、层叠体、带有树脂组合物层的半导体晶圆、带有树脂组合物层的半导体搭载用基板和半导体装置 |
CN110582841B (zh) | 2017-05-16 | 2023-08-22 | 迪睿合株式会社 | 底部填充材料、底部填充薄膜及使用其的半导体装置的制备方法 |
JP7210849B2 (ja) * | 2018-08-14 | 2023-01-24 | 株式会社レゾナック | 接着剤組成物及び半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008081713A (ja) * | 2006-08-29 | 2008-04-10 | Hitachi Chem Co Ltd | 接着剤組成物、回路接続材料、回路部材の接続構造及び半導体装置 |
TW201033316A (en) * | 2008-12-11 | 2010-09-16 | Cheil Ind Inc | Composition for circuit connection film and circuit connection film using the same |
CN102112568A (zh) * | 2008-08-04 | 2011-06-29 | 日立化成工业株式会社 | 胶粘剂组合物、膜状胶粘剂、胶粘片和半导体装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56155214A (en) | 1980-05-02 | 1981-12-01 | Hitachi Ltd | Thermosetting resin composition |
JPH0762057B2 (ja) * | 1990-11-30 | 1995-07-05 | 積水フアインケミカル株式会社 | 硬化性組成物 |
JPH08213517A (ja) | 1995-02-03 | 1996-08-20 | Bridgestone Corp | 電子回路封止用組成物及び電子回路の封止方法 |
JP3777734B2 (ja) | 1996-10-15 | 2006-05-24 | 東レ株式会社 | 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート |
JP3599160B2 (ja) | 1997-05-16 | 2004-12-08 | 大日本インキ化学工業株式会社 | マレイミド誘導体を含有する活性エネルギー線硬化性組成物及び該活性エネルギー線硬化性組成物の硬化方法 |
US5973166A (en) | 1998-03-02 | 1999-10-26 | The Dexter Corporation | Method for the preparation of maleimides |
JP2001302736A (ja) * | 2000-02-17 | 2001-10-31 | Nof Corp | 高分子絶縁材料及びその製造方法並びに電子関連基板及び電子部材 |
JP3633422B2 (ja) | 2000-02-22 | 2005-03-30 | ソニーケミカル株式会社 | 接続材料 |
US20070299181A1 (en) * | 2003-05-23 | 2007-12-27 | Du Pont-Mitsui Polychemicals Co., Ltd. | Polymer composition, process for producing the polymer composition, and molded articles for automobile exterior trim |
JP2005330333A (ja) * | 2004-05-18 | 2005-12-02 | Du Pont Mitsui Polychem Co Ltd | 重合体組成物およびその製造方法 |
CN1930263B (zh) | 2004-03-19 | 2012-02-29 | 住友电木株式会社 | 树脂组合物及采用该树脂组合物制作的半导体装置 |
JP4451214B2 (ja) | 2004-05-21 | 2010-04-14 | シャープ株式会社 | 半導体装置 |
GB0413630D0 (en) | 2004-06-18 | 2004-07-21 | Avecia Ltd | Process |
JP5560544B2 (ja) | 2007-08-29 | 2014-07-30 | 日立化成株式会社 | 接着剤組成物、フィルム状接着剤、回路接続用接着剤、接続体及び半導体装置 |
JP5014945B2 (ja) | 2007-10-17 | 2012-08-29 | シャープ株式会社 | 半導体装置 |
JP2009256581A (ja) | 2008-03-28 | 2009-11-05 | Hitachi Chem Co Ltd | 接着剤組成物、回路接続用接着剤及びそれを用いた接続体 |
JP5251393B2 (ja) | 2008-03-28 | 2013-07-31 | 日立化成株式会社 | 接着剤組成物、回路接続用接着剤及びそれを用いた接続体 |
JP5251555B2 (ja) * | 2009-02-02 | 2013-07-31 | 日立化成株式会社 | 感光性樹脂組成物、並びにこれを用いた感光性エレメント、ソルダーレジスト及びプリント配線板 |
JP4984099B2 (ja) | 2009-02-27 | 2012-07-25 | ソニーケミカル&インフォメーションデバイス株式会社 | 半導体装置の製造方法 |
WO2010144792A1 (en) * | 2009-06-11 | 2010-12-16 | Rogers Corporation | Dielectric materials, methods of forming subassemblies therefrom, and the subassemblies formed therewith |
JP5454018B2 (ja) | 2009-09-01 | 2014-03-26 | 日立化成株式会社 | フィルム状接着剤、接着シート及び半導体装置 |
KR101023241B1 (ko) | 2009-12-28 | 2011-03-21 | 제일모직주식회사 | 반도체용 접착제 조성물 및 이를 이용한 접착 필름 |
WO2013066597A1 (en) * | 2011-11-02 | 2013-05-10 | Henkel Corporation | Adhesive for electronic component |
-
2011
- 2011-09-09 WO PCT/JP2011/070652 patent/WO2013035205A1/ja active Application Filing
-
2012
- 2012-08-29 TW TW101131291A patent/TWI605111B/zh not_active IP Right Cessation
- 2012-09-07 CN CN201280049573.2A patent/CN103875065B/zh not_active Expired - Fee Related
- 2012-09-07 SG SG11201400491UA patent/SG11201400491UA/en unknown
- 2012-09-07 EP EP12830373.2A patent/EP2755233B1/en not_active Not-in-force
- 2012-09-07 KR KR1020147005978A patent/KR101926898B1/ko active IP Right Grant
- 2012-09-07 WO PCT/JP2012/072985 patent/WO2013035869A1/ja active Application Filing
- 2012-09-07 JP JP2013532686A patent/JP6182069B2/ja not_active Expired - Fee Related
-
2014
- 2014-03-07 US US14/200,871 patent/US9334429B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008081713A (ja) * | 2006-08-29 | 2008-04-10 | Hitachi Chem Co Ltd | 接着剤組成物、回路接続材料、回路部材の接続構造及び半導体装置 |
CN102112568A (zh) * | 2008-08-04 | 2011-06-29 | 日立化成工业株式会社 | 胶粘剂组合物、膜状胶粘剂、胶粘片和半导体装置 |
TW201033316A (en) * | 2008-12-11 | 2010-09-16 | Cheil Ind Inc | Composition for circuit connection film and circuit connection film using the same |
Also Published As
Publication number | Publication date |
---|---|
TWI605111B (zh) | 2017-11-11 |
EP2755233A1 (en) | 2014-07-16 |
US20140187729A1 (en) | 2014-07-03 |
CN103875065B (zh) | 2017-02-15 |
KR20140068929A (ko) | 2014-06-09 |
WO2013035869A1 (ja) | 2013-03-14 |
WO2013035205A1 (ja) | 2013-03-14 |
EP2755233A4 (en) | 2015-06-03 |
US9334429B2 (en) | 2016-05-10 |
KR101926898B1 (ko) | 2018-12-07 |
JPWO2013035869A1 (ja) | 2015-03-23 |
EP2755233B1 (en) | 2016-11-02 |
TW201321487A (zh) | 2013-06-01 |
JP6182069B2 (ja) | 2017-08-16 |
SG11201400491UA (en) | 2014-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103858217A (zh) | 用于电子装置的密封剂组合物 | |
CN103858216A (zh) | 用于电子装置的组合物 | |
CN104039913B (zh) | 用于电子部件的粘合剂 | |
CN103875065A (zh) | 底部填充组合物 | |
CN102942881A (zh) | 粘接片、使用其的电路构件的连接结构及半导体器件 | |
WO2018235854A1 (ja) | 半導体用接着剤、半導体装置の製造方法及び半導体装置 | |
WO2018066302A1 (ja) | 第1保護膜形成用シート | |
JPWO2015133386A1 (ja) | 電子部品実装用接着剤及びフリップチップ実装用接着フィルム | |
JP2012236873A (ja) | 樹脂ペースト組成物及び半導体装置 | |
JPWO2018225323A1 (ja) | 半導体用フィルム状接着剤、半導体装置の製造方法及び半導体装置 | |
JP2017122193A (ja) | 半導体用接着剤及び半導体装置の製造方法 | |
WO2019208615A1 (ja) | 樹脂組成物、積層体、樹脂組成物層付き半導体ウェハ、樹脂組成物層付き半導体搭載用基板、及び半導体装置 | |
JP7395979B2 (ja) | 導電性ペーストおよび半導体装置 | |
JP2023122842A (ja) | 樹脂組成物、積層体、樹脂組成物層付き半導体チップ、樹脂組成物層付き半導体チップ搭載用基板、及び半導体装置 | |
JP2016181612A (ja) | 電子部品実装用接着剤及びフリップチップ実装用接着フィルム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170215 Termination date: 20200907 |