CN103839999A - 一种功率场效应晶体管的结构与制备方法 - Google Patents
一种功率场效应晶体管的结构与制备方法 Download PDFInfo
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- CN103839999A CN103839999A CN201210490394.4A CN201210490394A CN103839999A CN 103839999 A CN103839999 A CN 103839999A CN 201210490394 A CN201210490394 A CN 201210490394A CN 103839999 A CN103839999 A CN 103839999A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
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- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 50
- 239000002019 doping agent Substances 0.000 claims description 45
- 229920005591 polysilicon Polymers 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
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- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66704—Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210490394.4A CN103839999A (zh) | 2012-11-27 | 2012-11-27 | 一种功率场效应晶体管的结构与制备方法 |
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CN201210490394.4A CN103839999A (zh) | 2012-11-27 | 2012-11-27 | 一种功率场效应晶体管的结构与制备方法 |
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Publication Number | Publication Date |
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CN103839999A true CN103839999A (zh) | 2014-06-04 |
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CN201210490394.4A Pending CN103839999A (zh) | 2012-11-27 | 2012-11-27 | 一种功率场效应晶体管的结构与制备方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105405879A (zh) * | 2014-08-05 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | Ldmos器件及其形成方法 |
CN105552053A (zh) * | 2016-02-23 | 2016-05-04 | 华天科技(昆山)电子有限公司 | Mosfet封装结构及其晶圆级制作方法 |
CN107731833A (zh) * | 2017-08-31 | 2018-02-23 | 长江存储科技有限责任公司 | 一种阵列共源极填充结构及其制备方法 |
CN105405879B (zh) * | 2014-08-05 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | Ldmos器件及其形成方法 |
CN109427586A (zh) * | 2017-09-01 | 2019-03-05 | 无锡华润上华科技有限公司 | 一种半导体器件及其制造方法 |
CN110521001A (zh) * | 2016-01-18 | 2019-11-29 | 德克萨斯仪器股份有限公司 | 具有金属填充的深源极触点的功率mosfet |
CN110729242A (zh) * | 2018-07-17 | 2020-01-24 | 上海宝芯源功率半导体有限公司 | 一种半导体开关器件及其制作方法 |
-
2012
- 2012-11-27 CN CN201210490394.4A patent/CN103839999A/zh active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105405879A (zh) * | 2014-08-05 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | Ldmos器件及其形成方法 |
CN105405879B (zh) * | 2014-08-05 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | Ldmos器件及其形成方法 |
CN110521001A (zh) * | 2016-01-18 | 2019-11-29 | 德克萨斯仪器股份有限公司 | 具有金属填充的深源极触点的功率mosfet |
CN110521001B (zh) * | 2016-01-18 | 2022-05-24 | 德克萨斯仪器股份有限公司 | 具有金属填充的深源极触点的功率mosfet |
CN105552053A (zh) * | 2016-02-23 | 2016-05-04 | 华天科技(昆山)电子有限公司 | Mosfet封装结构及其晶圆级制作方法 |
CN105552053B (zh) * | 2016-02-23 | 2019-03-08 | 华天科技(昆山)电子有限公司 | Mosfet封装结构及其晶圆级制作方法 |
CN107731833A (zh) * | 2017-08-31 | 2018-02-23 | 长江存储科技有限责任公司 | 一种阵列共源极填充结构及其制备方法 |
US10658379B2 (en) | 2017-08-31 | 2020-05-19 | Yangtze Memory Technologies Co., Ltd. | Array common source structures of three-dimensional memory devices and fabricating methods thereof |
CN109427586A (zh) * | 2017-09-01 | 2019-03-05 | 无锡华润上华科技有限公司 | 一种半导体器件及其制造方法 |
CN110729242A (zh) * | 2018-07-17 | 2020-01-24 | 上海宝芯源功率半导体有限公司 | 一种半导体开关器件及其制作方法 |
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Application publication date: 20140604 |
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Effective date of registration: 20170504 Address after: Gulou District of Nanjing City, Jiangsu province 210000 loop Longqiao No. 15-1 Applicant after: NANJING LISHENG SEMICONDUCTOR TECHNOLOGY CO., LTD. Address before: 518057 Guangdong city of Shenzhen province Nanshan District Hing Road three No. 8 China University of Geosciences research base in building C608, 610 Applicant before: SHENZHEN LIZHEN SEMICONDUCTOR CO., LTD. |
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