CN103812455B - 共阴共栅放大器 - Google Patents

共阴共栅放大器 Download PDF

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Publication number
CN103812455B
CN103812455B CN201310550356.8A CN201310550356A CN103812455B CN 103812455 B CN103812455 B CN 103812455B CN 201310550356 A CN201310550356 A CN 201310550356A CN 103812455 B CN103812455 B CN 103812455B
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CN
China
Prior art keywords
transistors
wiring
cascode amplifier
cascode
capacitor
Prior art date
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Active
Application number
CN201310550356.8A
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English (en)
Chinese (zh)
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CN103812455A (zh
Inventor
宫下美代
山本和也
北林文政
间木杰
福田绘理
嘉藤胜也
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Murata Manufacturing Co Ltd
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Mitsubishi Corp
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Publication of CN103812455A publication Critical patent/CN103812455A/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
CN201310550356.8A 2012-11-09 2013-11-08 共阴共栅放大器 Active CN103812455B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-247144 2012-11-09
JP2012247144A JP2014096696A (ja) 2012-11-09 2012-11-09 カスコードアンプ

Publications (2)

Publication Number Publication Date
CN103812455A CN103812455A (zh) 2014-05-21
CN103812455B true CN103812455B (zh) 2017-01-04

Family

ID=50681154

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310550356.8A Active CN103812455B (zh) 2012-11-09 2013-11-08 共阴共栅放大器

Country Status (4)

Country Link
US (1) US8890622B2 (enExample)
JP (1) JP2014096696A (enExample)
KR (1) KR101485917B1 (enExample)
CN (1) CN103812455B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9887673B2 (en) * 2016-03-11 2018-02-06 Intel Corporation Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
CN111600553A (zh) * 2020-05-28 2020-08-28 成都嘉纳海威科技有限责任公司 一种微波单片集成超宽带功率放大器
US12113484B2 (en) * 2021-03-31 2024-10-08 Macom Technology Solutions Holdings, Inc. High voltage stacked transistor amplifier
CN112953413A (zh) * 2021-04-02 2021-06-11 成都浩瀚芯光微电子科技有限公司 一种超宽带渐变温补分布式微波功率放大芯片

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1276230A2 (en) * 2001-07-11 2003-01-15 Fujitsu Limited Cascode distributed amplifier
CN1758533A (zh) * 2004-10-04 2006-04-12 三星电子株式会社 可变增益放大器
CN101425786A (zh) * 2004-11-11 2009-05-06 三星电子株式会社 可变增益放大器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3131931B2 (ja) 1992-03-13 2001-02-05 日本電信電話株式会社 高周波高出力増幅装置
JP2837025B2 (ja) 1992-04-24 1998-12-14 三菱電機株式会社 分布増幅器
JPH06224647A (ja) * 1992-12-03 1994-08-12 Sharp Corp 増幅回路
JP3517777B2 (ja) 1999-09-21 2004-04-12 日本電信電話株式会社 線形高出力増幅装置
US6768380B2 (en) * 2002-10-11 2004-07-27 Caldera Micro Technology, Inc. Wideband, variable-bandwidth distributed amplifier
JP4262545B2 (ja) * 2003-07-09 2009-05-13 三菱電機株式会社 カスコード接続回路及びその集積回路
JP4821214B2 (ja) * 2005-08-26 2011-11-24 三菱電機株式会社 カスコード接続回路
US8178908B2 (en) * 2008-05-07 2012-05-15 International Business Machines Corporation Electrical contact structure having multiple metal interconnect levels staggering one another
US8487706B2 (en) * 2010-01-25 2013-07-16 Peregrine Semiconductor Corporation Stacked linear power amplifier with capacitor feedback and resistor isolation
US8665022B2 (en) * 2011-04-28 2014-03-04 Rf Micro Devices, Inc. Low noise-linear power distributed amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1276230A2 (en) * 2001-07-11 2003-01-15 Fujitsu Limited Cascode distributed amplifier
CN1758533A (zh) * 2004-10-04 2006-04-12 三星电子株式会社 可变增益放大器
CN101425786A (zh) * 2004-11-11 2009-05-06 三星电子株式会社 可变增益放大器

Also Published As

Publication number Publication date
KR20140060231A (ko) 2014-05-19
US8890622B2 (en) 2014-11-18
CN103812455A (zh) 2014-05-21
KR101485917B1 (ko) 2015-01-26
JP2014096696A (ja) 2014-05-22
US20140132358A1 (en) 2014-05-15

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PB01 Publication
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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20190220

Address after: Kyoto Japan

Patentee after: Murata Manufacturing Co., Ltd.

Address before: Tokyo, Japan, Japan

Patentee before: Missubishi Electric Co., Ltd.