KR101485917B1 - 캐스코드 앰프 - Google Patents

캐스코드 앰프 Download PDF

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Publication number
KR101485917B1
KR101485917B1 KR20130132680A KR20130132680A KR101485917B1 KR 101485917 B1 KR101485917 B1 KR 101485917B1 KR 20130132680 A KR20130132680 A KR 20130132680A KR 20130132680 A KR20130132680 A KR 20130132680A KR 101485917 B1 KR101485917 B1 KR 101485917B1
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KR
South Korea
Prior art keywords
wiring
transistors
cascode amplifier
cascode
control terminals
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KR20130132680A
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English (en)
Korean (ko)
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KR20140060231A (ko
Inventor
미요 미야시타
카즈야 야마모토
후미마사 키타바야시
수구루 마키
에리 후쿠다
카쓰야 카토
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20140060231A publication Critical patent/KR20140060231A/ko
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Publication of KR101485917B1 publication Critical patent/KR101485917B1/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
KR20130132680A 2012-11-09 2013-11-04 캐스코드 앰프 Active KR101485917B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-247144 2012-11-09
JP2012247144A JP2014096696A (ja) 2012-11-09 2012-11-09 カスコードアンプ

Publications (2)

Publication Number Publication Date
KR20140060231A KR20140060231A (ko) 2014-05-19
KR101485917B1 true KR101485917B1 (ko) 2015-01-26

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ID=50681154

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20130132680A Active KR101485917B1 (ko) 2012-11-09 2013-11-04 캐스코드 앰프

Country Status (4)

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US (1) US8890622B2 (enExample)
JP (1) JP2014096696A (enExample)
KR (1) KR101485917B1 (enExample)
CN (1) CN103812455B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9887673B2 (en) * 2016-03-11 2018-02-06 Intel Corporation Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
CN111600553A (zh) * 2020-05-28 2020-08-28 成都嘉纳海威科技有限责任公司 一种微波单片集成超宽带功率放大器
US12113484B2 (en) * 2021-03-31 2024-10-08 Macom Technology Solutions Holdings, Inc. High voltage stacked transistor amplifier
CN112953413A (zh) * 2021-04-02 2021-06-11 成都浩瀚芯光微电子科技有限公司 一种超宽带渐变温补分布式微波功率放大芯片

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040070455A1 (en) * 2002-10-11 2004-04-15 Hong John H. Wideband, variable-bandwidth distributed amplifier

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3131931B2 (ja) 1992-03-13 2001-02-05 日本電信電話株式会社 高周波高出力増幅装置
JP2837025B2 (ja) 1992-04-24 1998-12-14 三菱電機株式会社 分布増幅器
JPH06224647A (ja) * 1992-12-03 1994-08-12 Sharp Corp 増幅回路
JP3517777B2 (ja) 1999-09-21 2004-04-12 日本電信電話株式会社 線形高出力増幅装置
JP4751002B2 (ja) * 2001-07-11 2011-08-17 富士通株式会社 カスコード型分布増幅器
JP4262545B2 (ja) * 2003-07-09 2009-05-13 三菱電機株式会社 カスコード接続回路及びその集積回路
KR100587566B1 (ko) * 2004-10-04 2006-06-08 삼성전자주식회사 가변 이득 증폭기
KR100708117B1 (ko) * 2004-11-11 2007-04-16 삼성전자주식회사 가변 이득 증폭기
JP4821214B2 (ja) * 2005-08-26 2011-11-24 三菱電機株式会社 カスコード接続回路
US8178908B2 (en) * 2008-05-07 2012-05-15 International Business Machines Corporation Electrical contact structure having multiple metal interconnect levels staggering one another
US8487706B2 (en) * 2010-01-25 2013-07-16 Peregrine Semiconductor Corporation Stacked linear power amplifier with capacitor feedback and resistor isolation
US8665022B2 (en) * 2011-04-28 2014-03-04 Rf Micro Devices, Inc. Low noise-linear power distributed amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040070455A1 (en) * 2002-10-11 2004-04-15 Hong John H. Wideband, variable-bandwidth distributed amplifier

Also Published As

Publication number Publication date
KR20140060231A (ko) 2014-05-19
US8890622B2 (en) 2014-11-18
CN103812455A (zh) 2014-05-21
JP2014096696A (ja) 2014-05-22
CN103812455B (zh) 2017-01-04
US20140132358A1 (en) 2014-05-15

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