CN103779274A - Constant-current diode unit and manufacturing method thereof - Google Patents
Constant-current diode unit and manufacturing method thereof Download PDFInfo
- Publication number
- CN103779274A CN103779274A CN201210409339.8A CN201210409339A CN103779274A CN 103779274 A CN103779274 A CN 103779274A CN 201210409339 A CN201210409339 A CN 201210409339A CN 103779274 A CN103779274 A CN 103779274A
- Authority
- CN
- China
- Prior art keywords
- layer
- diffusion layer
- diffusion
- negative electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 101
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 238000000407 epitaxy Methods 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a constant-current diode unit and a manufacturing method thereof. An N- silicon epitaxial layer is grown on an N+e substrate silicon chip. Two highly-doped P+ diffusion layers and two N+ diffusion layers used for connecting a negative electrode are diffused on the N- silicon epitaxial layer. The N+ diffusion layer, of which thickness is less than that of the N- silicon epitaxial layer and used for connecting a positive electrode, is diffused on the N- silicon epitaxial layer between the two P+ diffusion layers. Then one metal electrode is connected onto the N+ diffusion layer used for connecting the positive electrode and acts as the positive electrode. One metal electrode is connected between each P+ diffusion layer and the N+ diffusion layer used for connecting the negative electrode and acts as the negative electrode. Meanwhile, the bottom surface of the N+e substrate silicon chip is coated with one layer of the metal electrode to act as the negative electrode. The external surfaces of the N- silicon epitaxial layer, the P+ diffusion layers and the N+ diffusion layers are coated with silica insulating layers. The constant-current diode unit has advantages of being low in constant-current starting voltage, wide in voltage range of constant current and high-speed in electric-physical properties, etc.
Description
Technical field
the present invention relates to a kind of constant-current diode unit and preparation method thereof, belong to constant-current diode (CRD) manufacture technology field.
Background technology
constant current supply is conventional a kind of technology in electronic equipment and device, generally adopts electronic circuit or electronic devices and components to realize.Current regulator diode (CRD) is a kind of base semiconductor device of realizing constant-current source.There is low constant current starting resistor, electric physical property at a high speed.The reference current being mainly used in electronic circuit is set.Directly drive constant current load, realize constant-current power supply.At present, the shortcoming such as starting resistor that constant-current diode ubiquity of the prior art constant current is higher, corresponding change in voltage scope is narrower in the time of constant current, therefore or can not meet the needs of use.
Summary of the invention
the object of the invention is to, provide a kind of constant current starting resistor constant-current diode unit lower, corresponding change in voltage wider range and simple in structure, easy to make, stable and reliable working performance in the time of constant current and preparation method thereof, to overcome the deficiencies in the prior art.
technical scheme of the present invention is achieved in that the manufacture method of a kind of constant-current diode of the present invention unit is: adopt the highly doped N type semiconductor silicon chip of low-resistance as N+e silicon substrate, then on N+e silicon substrate, produce the low-doped N-silicon epitaxy layer of high resistant by semiconductor growing process, on N-silicon epitaxy layer by semiconductor diffusion technology produce respectively two highly doped P+ diffusion layers with two for being connected the highly doped N+ diffusion layer of negative electrode, this is communicated with N+e silicon substrate for the N+ diffusion layer that connects negative electrode, and make each P+ diffusion layer and eachly mutually isolated by N-silicon epitaxy layer between mutually for the N+ diffusion layer that connects negative electrode, on the N-silicon epitaxy layer between two P+ diffusion layers, diffuse out simultaneously a thickness be less than N-silicon epitaxy layer thickness for connecting the N+ diffusion layer of positive electrode, then on the N+ diffusion layer for connecting positive electrode, connect a metal electrode as positive electrode, connect a metal electrode as negative electrode each P+ diffusion layer and one for being connected between the N+ diffusion layer of negative electrode, also connect in the bottom surface of N+e silicon substrate and cover layer of metal electrode as negative electrode simultaneously, then at the outer surface of N-silicon epitaxy layer, on the outer surface of the outer surface of P+ diffusion layer and N+ diffusion layer, cover layer of silicon dioxide insulating barrier.
the of the present invention a kind of constant-current diode unit building according to said method is, this constant-current diode unit comprises N+e silicon substrate, on N+e silicon substrate, be provided with one deck N-silicon epitaxy layer, on N-silicon epitaxy layer, be provided with two P+ diffusion layers with two for being connected the N+ diffusion layer of negative electrode, this bottom that is used for the N+ diffusion layer that connects negative electrode is connected with N+e silicon substrate, on the N-silicon epitaxy layer between two P+ diffusion layers, be provided with the N+ diffusion layer for connecting positive electrode, on the N+ diffusion layer for connecting positive electrode, be connected with and adopt the electrode of metal making as positive electrode, between the N+ diffusion layer of negative electrode, be connected with one and adopt electrode that metal makes as negative electrode for being connected each P+ diffusion layer and one, also connect the electrode that is coated with the making of one deck employing metal in the bottom surface of N+e silicon substrate as negative electrode, at the outer surface of N-silicon epitaxy layer, on the outer surface of the outer surface of P+ diffusion layer and N+ diffusion layer, be coated with layer of silicon dioxide insulating barrier.
the thickness of above-mentioned P+ diffusion layer and be all less than respectively the thickness of N-silicon epitaxy layer for connecting the thickness of N+ diffusion layer of positive electrode.
above-mentioned for connecting 0.01 times～0.2 times of thickness that the thickness of N+ diffusion layer of positive electrode is N-silicon epitaxy layer.
owing to having adopted technique scheme, the present invention adopts cell channel structure, and this cell channel is as the basic constant current of intrinsic unit, when use, can pass through linear expansion (1, multiple unit parallel connection; 2, linear amplification) mode, form the device of various constant current parameters.This unit of the present invention mode makes to form the manufacture process standardization of CRD series of products, is very suitable for large-scale production.The characteristic of device of the present invention is the conducting of forward constant current, there is low constant current starting resistor and in the time of constant current change in voltage wide ranges, and there is electric physical property at a high speed.Technical characterstic of the present invention has the following aspects:
1, constant current diode of the present invention unit is vertical channel structure, conducting channel is short, can effectively improve the electric reaction speed of constant current diode, corresponding change in voltage scope when reducing the starting resistor of constant current and increasing constant current, after tested, the starting resistor of constant current of the present invention is lower 0.2～5 volt than traditional constant current diode, when its constant current, the width of corresponding change in voltage scope is 2～5 times of traditional constant current diode, and the performance that works long hours of constant current diode of the present invention unit is more stable and reliable;
2, the present invention can be according to the needs that use, and adjusting process parameter in the usual way in the time making can obtain the series unit of different constant current parameters; This unit is carried out to parallel combination, can expand constant current value.
3, the present invention is a kind of semi-conductor electronic device of two-terminal, its characteristic is forward constant current, have that constant current starting resistor is low, electric physical property at a high speed, the inverse function (seeing the constant-current diode element characteristics curve synoptic diagram of the present invention shown in accompanying drawing 2) of the similar PN junction characteristic of its characteristic curve;
4, the present invention adopts the controllable method in semiconductor PN space charge region to realize the automatic adjusting of channel resistance.
Accompanying drawing explanation
fig. 1 is the structural representation of constant-current diode of the present invention unit;
fig. 2 is constant-current diode element characteristics curve synoptic diagram of the present invention;
fig. 3 is the equivalent circuit diagram of constant-current diode of the present invention unit.
description of reference numerals: 1-N+e silicon substrate, 2-N-silicon epitaxy layer, 3-P+ diffusion layer, 4-connects negative electrode N+ diffusion layer, and 4.1-connects the N+ diffusion layer of positive electrode, 5-silicon dioxide insulating layer, 6-positive electrode, 7-negative electrode, a-connects the thickness of the N+ diffusion layer of positive electrode, the thickness of b-P+ diffusion layer, the thickness of B-N-silicon epitaxy layer; I
h
-constant current value, V
k
-corresponding magnitude of voltage (corresponding 0.8I while entering constant current value
h
), V
s
the lower voltage limit of-constant current, V
e
the upper voltage limit of-constant current, V
b
-forward break down voltage, V
r
-reverse breakdown voltage, C-is depletion region equivalent capacity (being total barrier capacitance of the depletion layer of PN junction when reverse), D-equivalence constant-current diode (CRD), R-is N channel current district equivalent resistance (being the dead resistance that N-silicon epitaxy layer current channel exists, is semiconductor resistor).
Embodiment
below in conjunction with drawings and Examples, the present invention is described in further detail, but not as any limitation of the invention.
embodiments of the invention: in the time implementing the manufacture method of a kind of constant-current diode of the present invention unit, can adopt diffusion technology or the growth technique of existing semiconductor transistor to make, when making, first adopt the highly doped N type semiconductor silicon chip of low-resistance as N+e silicon substrate, then on N+e silicon substrate, produce a N-silicon epitaxy layer that high resistant is low-doped by existing semiconductor growing process, the thickness B of N-silicon epitaxy layer is 1/3～2/3 of N+e silicon substrate thickness, then on N-silicon epitaxy layer, adopt existing semiconductor diffusion technology produce respectively two highly doped P+ diffusion layers with two for being connected the highly doped N+ diffusion layer of negative electrode, the diffusion concentration of its P+ diffusion layer and N+ diffusion layer can be determined by existing conventional diffusion technological parameter, make this be diffused into N+e silicon substrate and be communicated with for connecting the N+ diffusion layer of negative electrode simultaneously, and make each P+ diffusion layer and eachly mutually isolated by N-silicon epitaxy layer between mutually for the N+ diffusion layer that connects negative electrode, on the N-silicon epitaxy layer between two P+ diffusion layers, diffuse out simultaneously a thickness be less than N-silicon epitaxy layer thickness for connecting the N+ diffusion layer of positive electrode, then on the N+ diffusion layer for connecting positive electrode, connect the electrode of a metal making as positive electrode, between the N+ diffusion layer of negative electrode, connect electrode that a metal makes as negative electrode each P+ diffusion layer and one for being connected, also connect the electrode that covers layer of metal making in the bottom surface of N+e silicon substrate as negative electrode simultaneously, because N+ diffusion layer and N+e silicon substrate are highly doped, low resistance electrode, therefore these two electrodes are communicated with, then on outer surface, the outer surface of P+ diffusion layer and the outer surface of N+ diffusion layer of N-silicon epitaxy layer, cover layer of silicon dioxide insulating barrier.
the structural representation of the of the present invention a kind of constant-current diode unit building according to said method as shown in Figure 1, the characteristic curve schematic diagram of its constant-current diode unit as shown in Figure 2, the equivalent circuit diagram of its constant-current diode unit as shown in Figure 3, constant-current diode of the present invention unit comprises that the existing N+e silicon substrate 1 of employing is as substrate, when making, on N+e silicon substrate 1, be provided with one deck N-silicon epitaxy layer 2, on N-silicon epitaxy layer 2, be provided with two P+ diffusion layers 3 with two for being connected the N+ diffusion layer 4 of negative electrode, this bottom that is used for the N+ diffusion layer 4 that connects negative electrode is connected with N+e silicon substrate 1, on the N-silicon epitaxy layer 2 between two P+ diffusion layers 3, be provided with the N+ diffusion layer 4.1 for connecting positive electrode, the thickness b of its P+ diffusion layer 3 and be all less than respectively the thickness B of N-silicon epitaxy layer 2 for connecting the thickness a of N+ diffusion layer 4.1 of positive electrode, when making, preferably the thickness a of the N+ diffusion layer 4.1 for connecting positive electrode is made as to 0.01 times～0.2 times of thickness B of N-silicon epitaxy layer 2, then on the N+ diffusion layer 4.1 for connecting positive electrode, be connected with and adopt the electrode of metal making as positive electrode 6, between the N+ diffusion layer 4 of negative electrode, connect one and adopt electrode that metal makes as negative electrode 7 for being connected each P+ diffusion layer 3 and one, also connect in the bottom surface of N+e silicon substrate 1 and cover one deck and adopt electrode that metal makes as negative electrode 7, on outer surface, the outer surface of P+ diffusion layer 3 and the outer surface of N+ diffusion layer 4 of N-silicon epitaxy layer 2, be coated with layer of silicon dioxide insulating barrier 5.
below the operation principle of constant current diode of the present invention unit is specifically described:
referring to the structural representation of the constant-current diode of the present invention unit shown in accompanying drawing 1, in the time that applied voltage is connected between positive electrode 6 and negative electrode 7, the PN junction forming between P+ diffusion layer 3 and N-silicon epitaxy layer 2 is reverse, due to the Potential distribution of N-silicon epitaxy layer 2, be greater than near negative electrode 7(N-epitaxial loayer 2 bottoms near the width of the depletion layer (N-epitaxial loayer 2 tops) of positive electrode 6) width; In the time that applied voltage is lower, raceway groove (N-epitaxial loayer 2) between P+ diffusion layer 3 is semiconductor resistance, electric current flows through and (flows to N+e silicon substrate 1 and negative electrode 7 to power cathode, as the 0-V in characteristic curve by positive source by positive electrode 6 from raceway groove
k
section); Along with the raising of applied voltage, the width of depletion layer constantly increases, and the raceway groove (N-epitaxial loayer 2) between P+ diffusion layer 3 constantly dwindles, until first top closes up (pinch off), at this moment channel resistance increases, and current saturation, starts to enter constant current (V
k
-V
s
section); Applied voltage further improves, and raceway groove pinch off extends, and channel resistance is in certain limit with the proportional increase of voltage, and electric current is constant in certain voltage excursion (as the V in characteristic curve
s
-V
e
section), its constant current value I
h
be shown below:
i
h
=constant=V ↑/R ↑, (in formula, V is applied voltage value, and R is the dead resistance that N-silicon epitaxy layer current channel exists, and is semiconductor resistor);
from above formula, by by the constant current linear superposition of multiple unit parallel connection of the present invention, can realize the constant current value of expansion.
Claims (4)
1. the manufacture method of a constant-current diode unit, it is characterized in that: adopt the highly doped N type semiconductor silicon chip of low-resistance as N+e silicon substrate, then on N+e silicon substrate, produce the low-doped N-silicon epitaxy layer of high resistant by semiconductor growing process, on N-silicon epitaxy layer by semiconductor diffusion technology produce respectively two highly doped P+ diffusion layers with two for being connected the highly doped N+ diffusion layer of negative electrode, this is communicated with N+e silicon substrate for the N+ diffusion layer that connects negative electrode, and make each P+ diffusion layer and eachly mutually isolated by N-silicon epitaxy layer between mutually for the N+ diffusion layer that connects negative electrode, on the N-silicon epitaxy layer between two P+ diffusion layers, diffuse out simultaneously a thickness be less than N-silicon epitaxy layer thickness for connecting the N+ diffusion layer of positive electrode, then on the N+ diffusion layer for connecting positive electrode, connect a metal electrode as positive electrode, connect a metal electrode as negative electrode each P+ diffusion layer and one for being connected between the N+ diffusion layer of negative electrode, also connect in the bottom surface of N+e silicon substrate and cover layer of metal electrode as negative electrode simultaneously, then at the outer surface of N-silicon epitaxy layer, on the outer surface of the outer surface of P+ diffusion layer and N+ diffusion layer, cover layer of silicon dioxide insulating barrier.
2. a constant-current diode unit, comprise N+e silicon substrate (1), it is characterized in that: on N+e silicon substrate (1), be provided with one deck N-silicon epitaxy layer (2), on N-silicon epitaxy layer (2), be provided with two P+ diffusion layers (3) with two for being connected the N+ diffusion layer (4) of negative electrode, this bottom that is used for the N+ diffusion layer (4) that connects negative electrode is connected with N+e silicon substrate (1), on the N-silicon epitaxy layer (2) between two P+ diffusion layers (3), be provided with the N+ diffusion layer (4.1) for connecting positive electrode, on the N+ diffusion layer (4.1) for connecting positive electrode, be connected with and adopt the electrode of metal making as positive electrode (6), between the N+ diffusion layer (4) of negative electrode, be connected with one and adopt electrode that metal makes as negative electrode (7) for being connected each P+ diffusion layer (3) and one, also connect the electrode that is coated with the making of one deck employing metal in the bottom surface of N+e silicon substrate (1) as negative electrode (7), at the outer surface of N-silicon epitaxy layer (2), on the outer surface of the outer surface of P+ diffusion layer (3) and N+ diffusion layer (4), be coated with layer of silicon dioxide insulating barrier (5).
3. constant-current diode according to claim 2 unit, is characterized in that: the thickness (b) of P+ diffusion layer (3) and be all less than respectively the thickness (B) of N-silicon epitaxy layer (2) for connecting the thickness (a) of N+ diffusion layer (4.1) of positive electrode.
4. constant-current diode according to claim 3 unit, is characterized in that: for connecting 0.01 times～0.2 times that the thickness (a) of N+ diffusion layer (4.1) of positive electrode is the thickness (B) of N-silicon epitaxy layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210409339.8A CN103779274B (en) | 2012-10-24 | 2012-10-24 | A kind of constant-current diode unit and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210409339.8A CN103779274B (en) | 2012-10-24 | 2012-10-24 | A kind of constant-current diode unit and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103779274A true CN103779274A (en) | 2014-05-07 |
| CN103779274B CN103779274B (en) | 2016-12-21 |
Family
ID=50571379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210409339.8A Active CN103779274B (en) | 2012-10-24 | 2012-10-24 | A kind of constant-current diode unit and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779274B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638022A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | SOI (Silicon-On-Insulator) lateral current regulative diode and manufacturing method thereof |
| CN104952911A (en) * | 2015-06-11 | 2015-09-30 | 江苏东晨电子科技有限公司 | Annular PN junction |
| CN105206683A (en) * | 2015-10-15 | 2015-12-30 | 苏州汉克山姆照明科技有限公司 | Current regulative diode structure |
| CN105405873A (en) * | 2015-12-25 | 2016-03-16 | 电子科技大学 | Semiconductor device and manufacturing method thereof |
| CN106601701A (en) * | 2017-01-19 | 2017-04-26 | 贵州煜立电子科技有限公司 | Stereoscopic packaging method and structure for high-power two-end surface leading foot electronic component |
| CN106952965A (en) * | 2017-03-27 | 2017-07-14 | 河北普兴电子科技股份有限公司 | Silicon epitaxial wafer and preparation method thereof |
| CN110473871A (en) * | 2019-09-05 | 2019-11-19 | 成都矽能科技有限公司 | A kind of constant current device and its manufacturing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169846A (en) * | 1993-09-29 | 1995-07-04 | Seiko Instr Inc | Constant current device of semiconductor integrated circuit and manufacture of it |
| JP2008282878A (en) * | 2007-05-08 | 2008-11-20 | Rohm Co Ltd | Semiconductor device and manufacturing method thereof |
| CN201576684U (en) * | 2009-10-09 | 2010-09-08 | 贵州大学 | Multi-channel current-extending semiconductor constant-current diode |
| CN102130182A (en) * | 2010-11-03 | 2011-07-20 | 绍兴旭昌科技企业有限公司 | Current regulation diode chip and manufacturing method thereof |
| CN102487088A (en) * | 2010-12-01 | 2012-06-06 | 贵州煜立电子科技有限公司 | Constant current diode with vertical channels |
| CN202977427U (en) * | 2012-10-24 | 2013-06-05 | 贵州煜立电子科技有限公司 | Constant current diode unit structure |
-
2012
- 2012-10-24 CN CN201210409339.8A patent/CN103779274B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07169846A (en) * | 1993-09-29 | 1995-07-04 | Seiko Instr Inc | Constant current device of semiconductor integrated circuit and manufacture of it |
| JP2008282878A (en) * | 2007-05-08 | 2008-11-20 | Rohm Co Ltd | Semiconductor device and manufacturing method thereof |
| CN201576684U (en) * | 2009-10-09 | 2010-09-08 | 贵州大学 | Multi-channel current-extending semiconductor constant-current diode |
| CN102130182A (en) * | 2010-11-03 | 2011-07-20 | 绍兴旭昌科技企业有限公司 | Current regulation diode chip and manufacturing method thereof |
| CN102487088A (en) * | 2010-12-01 | 2012-06-06 | 贵州煜立电子科技有限公司 | Constant current diode with vertical channels |
| CN202977427U (en) * | 2012-10-24 | 2013-06-05 | 贵州煜立电子科技有限公司 | Constant current diode unit structure |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638022B (en) * | 2015-02-15 | 2018-04-06 | 电子科技大学 | A kind of SOI transverse directions current regulator diode and its manufacture method |
| CN104638022A (en) * | 2015-02-15 | 2015-05-20 | 电子科技大学 | SOI (Silicon-On-Insulator) lateral current regulative diode and manufacturing method thereof |
| CN104952911A (en) * | 2015-06-11 | 2015-09-30 | 江苏东晨电子科技有限公司 | Annular PN junction |
| CN104952911B (en) * | 2015-06-11 | 2018-09-18 | 江苏东晨电子科技有限公司 | A kind of ring-type PN junction |
| CN105206683A (en) * | 2015-10-15 | 2015-12-30 | 苏州汉克山姆照明科技有限公司 | Current regulative diode structure |
| CN105206683B (en) * | 2015-10-15 | 2018-07-10 | 苏州汉克山姆照明科技有限公司 | A kind of current regulator diode structure |
| CN105405873A (en) * | 2015-12-25 | 2016-03-16 | 电子科技大学 | Semiconductor device and manufacturing method thereof |
| CN106601701A (en) * | 2017-01-19 | 2017-04-26 | 贵州煜立电子科技有限公司 | Stereoscopic packaging method and structure for high-power two-end surface leading foot electronic component |
| CN106601701B (en) * | 2017-01-19 | 2023-03-28 | 贵州煜立电子科技有限公司 | Three-dimensional packaging method and structure of high-power electronic component with two end surface lead-out pins |
| CN106952965A (en) * | 2017-03-27 | 2017-07-14 | 河北普兴电子科技股份有限公司 | Silicon epitaxial wafer and preparation method thereof |
| CN106952965B (en) * | 2017-03-27 | 2020-12-15 | 河北普兴电子科技股份有限公司 | Silicon epitaxial wafer and method for producing the same |
| CN110473871A (en) * | 2019-09-05 | 2019-11-19 | 成都矽能科技有限公司 | A kind of constant current device and its manufacturing method |
| CN110473871B (en) * | 2019-09-05 | 2024-03-26 | 成都矽能科技有限公司 | Constant current device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103779274B (en) | 2016-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103779274A (en) | Constant-current diode unit and manufacturing method thereof | |
| CN105556668B (en) | Semiconductor device | |
| CN101764162A (en) | Metallic oxide field-effect diode and MOS diode | |
| CN104638024B (en) | A kind of horizontal current regulator diode and its manufacture method based on SOI | |
| CN109166916A (en) | A kind of insulated gate bipolar transistor and preparation method thereof | |
| CN102130182B (en) | Current regulation diode chip and manufacturing method thereof | |
| CN202977427U (en) | Constant current diode unit structure | |
| CN103579307A (en) | Novel diode component structure | |
| CN103811491B (en) | A kind of tabilized current power supply integrated chip and manufacture method | |
| CN104103514A (en) | Method for manufacturing vertical groove current regulative diode | |
| CN104638020A (en) | Epitaxial layer-based vertical current regulative diode and manufacturing method thereof | |
| CN102487088A (en) | Constant current diode with vertical channels | |
| CN102856368A (en) | Power bipolar transistor and manufacture method thereof | |
| CN203733798U (en) | Adjustable constant-current source integrated chip | |
| CN103579365A (en) | Novel diode component structure | |
| CN104638004A (en) | Super-junction MOSFET (metal-oxide-semiconductor field-effect transistor) device structure | |
| CN103268861A (en) | Method for manufacturing FS (field stop) type IGBT (insulated gate bipolar transistor) by multiple epitaxies | |
| CN208385408U (en) | A kind of low low residual voltage ESD surge protective device for holding structure | |
| CN206179873U (en) | Schottky rectifier with surface impurity concentration regulatory region | |
| CN201877434U (en) | Vertical channel constant-current diode | |
| CN207743229U (en) | A kind of super barrier rectifier of Schottky contacts | |
| CN106067420A (en) | A kind of constant-current diode unit and preparation method thereof | |
| CN201611660U (en) | Metallic oxide field-effect diode and MOS diode | |
| CN207517703U (en) | A kind of Ohmic contact and the super barrier rectifier of Schottky contacts | |
| CN207517702U (en) | A kind of super barrier rectifier of double extensions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |