CN103779274B - A kind of constant-current diode unit and preparation method thereof - Google Patents
A kind of constant-current diode unit and preparation method thereof Download PDFInfo
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- CN103779274B CN103779274B CN201210409339.8A CN201210409339A CN103779274B CN 103779274 B CN103779274 B CN 103779274B CN 201210409339 A CN201210409339 A CN 201210409339A CN 103779274 B CN103779274 B CN 103779274B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Abstract
nullThe invention discloses a kind of constant-current diode unit and preparation method thereof，The present invention grows N silicon epitaxy layer on N+e silicon substrate，N silicon epitaxy layer diffuses out two highly doped P+ diffusion layers and two for connecting the N+ diffusion layer of negative electrode，The thickness N+ diffusion layer for connecting anelectrode less than N silicon epitaxy layer thickness is diffused out on N silicon epitaxy layer between two P+ diffusion layers，Then for connect on the N+ diffusion layer of anelectrode connect a metal electrode as anelectrode，Between the N+ diffusion layer connecting negative electrode, a metal electrode is connected as negative electrode each P+ diffusion layer and one，Also connect covering layer of metal electrode in the bottom surface of N+e silicon substrate as negative electrode simultaneously，At N silicon epitaxy layer、It is coated with silicon dioxide insulating layer on the outer surface of P+ diffusion layer and N+ diffusion layer.The present invention has low constant current and starts the advantage such as voltage and the constant current of wide-range voltage and electric physical property at a high speed.
Description
Technical field
The present invention relates to a kind of constant-current diode unit and preparation method thereof, belong to constant-current diode (CRD) and make
Technical field.
Background technology
Constant current supply is a kind of technology conventional in electronic equipment and device, general employing electronic circuit or electronic devices and components
Realize.Current regulator diode (CRD) is a kind of base semiconductor device realizing constant-current source.There is low constant current and start voltage,
Electric physical property at a high speed.The reference current being mainly used in electronic circuit sets.Directly drive constant current load, it is achieved permanent
Current and power supply.At present, generally to there is the startup voltage of constant current higher, constant for constant-current diode of the prior art
The shortcomings such as voltage change range corresponding during electric current is narrower, therefore still can not meet the needs of use.
Summary of the invention
It is an object of the invention to, it is provided that a kind of constant current starts the electricity that voltage is relatively low, corresponding when constant current
Buckling wider range and simple in construction, easy to make, the constant-current diode unit of stable and reliable working performance and system thereof
Make method, to overcome the deficiencies in the prior art.
The technical scheme is that and be achieved in that: the manufacture method of a kind of constant-current diode unit of the present invention
Be: use the highly doped N-type semiconductor silicon chip of low-resistance as N+ silicon substrate, then raw by quasiconductor on N+ silicon substrate
Long technique produces the N-silicon epitaxy layer that high resistant is low-doped, is produced respectively by quasiconductor diffusion technique on N-silicon epitaxy layer
Two highly doped P+ diffusion layers and two highly doped N+ diffusion layers being used for connecting negative electrode, make this be used for connecting negative electrode
N+ diffusion layer connect with N+ silicon substrate, and make each P+ diffusion layer and each N+ diffusion layer for connecting negative electrode mutual
Between mutually isolated by N-silicon epitaxy layer, simultaneously diffuse out a thickness on the N-silicon epitaxy layer between two P+ diffusion layers little
In N-silicon epitaxy layer thickness for connecting the N+ diffusion layer of anelectrode, then connecting on the N+ diffusion layer of anelectrode for connecting
Connect a metal electrode as anelectrode, connect between the N+ diffusion layer connecting negative electrode each P+ diffusion layer and one
Connect a metal electrode as negative electrode, also connect covering layer of metal electrode in the bottom surface of N+ silicon substrate as negative electricity simultaneously
Pole, then covers one layer of dioxy on the outer surface of outer surface, the outer surface of P+ diffusion layer and the N+ diffusion layer of N-silicon epitaxy layer
SiClx insulating barrier.
A kind of constant-current diode unit of the present invention according to said method structure is, this constant-current diode unit bag
Include N+ silicon substrate, N+ silicon substrate is provided with one layer of N-silicon epitaxy layer, N-silicon epitaxy layer is provided with two P+ diffusion layers
With two for connecting the N+ diffusion layer of negative electrode, this is used for the bottom connecting the N+ diffusion layer of negative electrode with N+ silicon substrate even
Connect, the N-silicon epitaxy layer between two P+ diffusion layers is provided with the N+ diffusion layer for connecting anelectrode, for just connecting
Connect on the N+ diffusion layer of electrode and have the electrode using metal to make as anelectrode, be used for even each P+ diffusion layer and one
Connect all to connect between the N+ diffusion layer of negative electrode and have an electrode using metal to make as negative electrode, at N+ silicon substrate
Bottom surface also connects and is coated with one layer of electrode using metal to make as negative electrode, in outer surface, the P+ diffusion of N-silicon epitaxy layer
It is coated with layer of silicon dioxide insulating barrier on the outer surface of layer and the outer surface of N+ diffusion layer.
The thickness of the thickness of above-mentioned P+ diffusion layer and the N+ diffusion layer for connecting anelectrode is all respectively smaller than N-silicon
The thickness of epitaxial layer.
0.01 times～0.2 times of the thickness that thickness is N-silicon epitaxy layer of the above-mentioned N+ diffusion layer for connecting anelectrode.
Owing to have employed technique scheme, the present invention uses cell channel structure, and this cell channel is as proper tetrad
This constant current unit, during use, can pass through linear expansion (i.e. 1, multiple-unit in parallel；2, linear amplification) mode, constitute various perseverance
The device of stream parameter.This unit mode of the present invention makes to be formed the manufacture process standardization of CRD series of products, is especially suitable for
In large-scale production.The characteristic of device of the present invention is the conducting of forward constant current, has low constant current and starts voltage and in perseverance
The advantage that during stream, voltage change range is wide, and there is electric physical property at a high speed.The technical characterstic of the present invention has following side
Face:
1, the constant current diode unit of the present invention is vertical channel structure, and conducting channel is short, can be effectively improved constant current two
The electric response speed of level pipe, reduces starting voltage and increasing voltage change range corresponding during constant current of constant current,
After tested, the constant current diode that the startup voltage ratio of the constant current of the present invention is traditional is low 0.2～5 volt, during its constant current
The width of corresponding voltage change range is 2～5 times of conventional constant current diode, and the constant current diode unit of the present invention
The performance that works long hours more stable and reliable；
2, the present invention can be according to the needs used, and the adjusting process parameter in the usual way when making can obtain difference
The series unit of constant current parameter；This unit is carried out parallel combination, constant current value can be extended.
3, the present invention is the semi-conductor electronic device of a kind of two-terminal, and its characteristic is forward constant current, has constant current
Startup voltage is low, the electric physical property of high speed, and its characteristic curve is similar to the inverse function of PN junction characteristic (see this shown in accompanying drawing 2
Bright constant-current diode element characteristics curve synoptic diagram)；
4, the present invention uses the controllable method in semiconductor PN space-charge region to realize being automatically adjusted of channel resistance.
Accompanying drawing explanation
Fig. 1 is the structural representation of the constant-current diode unit of the present invention；
Fig. 2 is the constant-current diode element characteristics curve synoptic diagram of the present invention；
Fig. 3 is the equivalent circuit diagram of the constant-current diode unit of the present invention.
Description of reference numerals: 1-N+ silicon substrate, 2-N-silicon epitaxy layer, 3-P+ diffusion layer, 4-connects negative electrode N+ diffusion
Layer, 4.1-connects the N+ diffusion layer of anelectrode, 5-silicon dioxide insulating layer, 6-anelectrode, 7-negative electrode, and a-connects anelectrode
The thickness of N+ diffusion layer, the thickness of b-P+ diffusion layer, the thickness of B-N-silicon epitaxy layer；IH-constant current value, VK-enter constant electricity
Magnitude of voltage (corresponding 0.8I corresponding during flow valuveH), VSThe lower voltage limit of-constant current, VEThe upper voltage limit of-constant current, VB-
Forward break down voltage, VR-breakdown reverse voltage, C-be depletion region equivalent capacity (be PN junction reverse time total gesture of depletion layer
Build electric capacity), D-equivalence constant-current diode (CRD), R-are N-channel Current Zone equivalent resistance (i.e. N-silicon epitaxy layer current channel
The dead resistance existed, for semiconductor resistor).
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings, but any not as to the present invention
Limit.
Embodiments of the invention: when implementing the manufacture method of a kind of constant-current diode unit of the present invention, can use
Diffusion technique or the growth technique of existing semiconductor transistor make, and during making, first use the N-type half that low-resistance is highly doped
Conductor silicon chip, as N+ silicon substrate, then produces a high resistant by existing semiconductor growing process on N+ silicon substrate
Low-doped N-silicon epitaxy layer, the thickness B of N-silicon epitaxy layer is the 1/3～2/3 of N+ silicon substrate thickness, then in N-silicon epitaxy
Existing quasiconductor diffusion technique is used to produce two highly doped P+ diffusion layers and two respectively for connecting negative electricity on layer
The highly doped N+ diffusion layer of pole, the diffusion concentration of its P+ diffusion layer and N+ diffusion layer can be by existing conventional diffusion technological parameter
Determine, make this be diffused into for the N+ diffusion layer connecting negative electrode simultaneously and connect with N+ silicon substrate, and make each P+ diffusion layer
Mutually isolated by N-silicon epitaxy layer each other with each N+ diffusion layer for connecting negative electrode, simultaneously at two P+ diffusion layers
Between N-silicon epitaxy layer on diffuse out a thickness less than the N+ diffusion layer for connecting anelectrode of N-silicon epitaxy layer thickness,
Then connecting electrode that metal makes on the N+ diffusion layer of anelectrode as anelectrode for connecting, spreading at each P+
Layer, exists as negative electrode with an electrode all connecting a metal making between the N+ diffusion layer being connected negative electrode simultaneously
The bottom surface of N+ silicon substrate also connect cover layer of metal make electrode as negative electrode, due to N+ diffusion layer and N+ substrate silicon
Sheet is highly doped, low resistance electrode, and therefore the two electrode is connection；Then at outer surface, the P+ diffusion layer of N-silicon epitaxy layer
Outer surface and N+ diffusion layer outer surface on cover layer of silicon dioxide insulating barrier.
According to said method build the present invention a kind of constant-current diode unit structural representation as shown in Figure 1,
The characteristic curve schematic diagram of its constant-current diode unit as shown in Figure 2, the equivalent circuit diagram of its constant-current diode unit such as
Shown in Fig. 3, the constant-current diode unit of the present invention include using existing N+ silicon substrate 1 as substrate, during making, at N+
Silicon substrate 1 is provided with one layer of N-silicon epitaxy layer 2, is provided with two P+ diffusion layers 3 and two for connecting on N-silicon epitaxy layer 2
The N+ diffusion layer 4 of negative electrode, this bottom being used for connecting the N+ diffusion layer 4 of negative electrode is connected with N+ silicon substrate 1, at two P+
N-silicon epitaxy layer 2 between diffusion layer 3 is provided with the N+ diffusion layer 4.1 for connecting anelectrode, the thickness b of its P+ diffusion layer 3
And the thickness a of the N+ diffusion layer 4.1 for connecting anelectrode is respectively smaller than the thickness B of N-silicon epitaxy layer 2, during making,
Get well the thickness B that the thickness a being used for connecting the N+ diffusion layer 4.1 of anelectrode is made as N-silicon epitaxy layer 2 0.01 times～0.2
Times；Then there iing the electrode using metal to make as anelectrode 6 for connecting to connect on the N+ diffusion layer 4.1 of anelectrode,
Each P+ diffusion layer 3 connects an electrode using metal to make with one between the N+ diffusion layer 4 being connected negative electrode
As negative electrode 7, also connect in the bottom surface of N+ silicon substrate 1 and cover one layer of electrode using metal to make as negative electrode 7,
It is coated with layer of silicon dioxide on the outer surface of the outer surface of N-silicon epitaxy layer 2, the outer surface of P+ diffusion layer 3 and N+ diffusion layer 4
Insulating barrier 5.
Below the operation principle of the constant current diode unit of the present invention is specifically described:
Referring to the structural representation of the constant-current diode unit of the present invention shown in accompanying drawing 1, when applied voltage is connected to
Time between anelectrode 6 and negative electrode 7, the PN junction formed between P+ diffusion layer 3 and N-silicon epitaxy layer 2 is reverse, due to N-silicon outside
Prolonging the Potential distribution of layer 2, the width near the depletion layer (N-epitaxial layer 2 top) of anelectrode 6 is more than near negative electrode 7 (outside N-
Prolong bottom layer 2) width；When applied voltage is relatively low when, the raceway groove (N-epitaxial layer 2) between P+ diffusion layer 3 is that half is led
Bulk resistor, electric current flows through from raceway groove and (is flowed to N+ silicon substrate 1 and negative electrode 7 to power supply by positive source by anelectrode 6
Negative pole, such as the 0-V in characteristic curveKSection)；Along with the raising of applied voltage, the width of depletion layer is continuously increased, P+ diffusion layer 3
Between raceway groove (N-epitaxial layer 2) constantly reduce, until first top closes up (pinch off), at this moment channel resistance increase, electric current satisfy
With, initially enter constant current (VK-VSSection)；Applied voltage improves further, and raceway groove pinch off extends, and channel resistance is same in certain limit
The proportional increase of voltage, electric current is constant in certain voltage excursion (such as the V in characteristic curveS-VESection), its constant current
Value IHIt is shown below:
IH=constant=V ↑/R ↑, (in formula, V is applied voltage value, and R is the parasitic electricity that N-silicon epitaxy layer current channel exists
Resistance, for semiconductor resistor)；
Knowable to above formula, by the constant current linear superposition that multiple-unit of the present invention is in parallel, i.e. can realize expansion
Constant current value.
Claims (4)
1. the manufacture method of a constant-current diode unit, it is characterised in that: use the N-type semiconductor silicon chip that low-resistance is highly doped
As N+ silicon substrate, then on N+ silicon substrate, produce, by semiconductor growing process, the N-silicon epitaxy that high resistant is low-doped
Layer, produces two highly doped P+ diffusion layers and two for even respectively by quasiconductor diffusion technique on N-silicon epitaxy layer
Connecing the highly doped N+ diffusion layer of negative electrode, two of which is arranged on N-silicon for the highly doped N+ diffusion layer connecting negative electrode
The two ends of epitaxial layer, two highly doped P+ diffusion layers be arranged on two for connect negative electrode highly doped N+ diffusion layer it
Between, make this connect with N+ silicon substrate for the N+ diffusion layer connecting negative electrode, and make each P+ diffusion layer and each for even
The N+ diffusion layer connecing negative electrode is mutually isolated by N-silicon epitaxy layer each other, simultaneously outside the N-silicon between two P+ diffusion layers
Prolong the N+ diffusion layer for connecting anelectrode diffusing out a thickness on layer less than N-silicon epitaxy layer thickness, then for even
Connect and connect metal electrode on the N+ diffusion layer of anelectrode as anelectrode, be used for connecting each P+ diffusion layer and one negative
All connect a metal electrode between the N+ diffusion layer of electrode as negative electrode, also connect in the bottom surface of N+ silicon substrate simultaneously and cover
Lid layer of metal electrode is as negative electrode, then at outer surface, the outer surface of P+ diffusion layer and the N+ diffusion layer of N-silicon epitaxy layer
Outer surface on cover layer of silicon dioxide insulating barrier.
2. a constant-current diode unit, including N+ silicon substrate (1), it is characterised in that: it is provided with on N+ silicon substrate (1)
One layer of N-silicon epitaxy layer (2), is provided with two P+ diffusion layers (3) and two N being used for connecting negative electrode on N-silicon epitaxy layer (2)
+ diffusion layer (4), two of which is arranged on the two of N-silicon epitaxy layer (2) for the highly doped N+ diffusion layer (4) connecting negative electrode
End, two highly doped P+ diffusion layers (3) be arranged on two between the highly doped N+ diffusion layer (4) connecting negative electrode,
This bottom being used for connecting the N+ diffusion layer (4) of negative electrode is connected with N+ silicon substrate (1), between two P+ diffusion layers (3)
N-silicon epitaxy layer (2) be provided with the N+ diffusion layer (4.1) for connecting anelectrode, for connecting the N+ diffusion layer of anelectrode
(4.1) there is the electrode using metal to make upper connection as anelectrode (6), is used for being connected with one each P+ diffusion layer (3)
All connect between the N+ diffusion layer (4) of negative electrode and have an electrode using metal to make as negative electrode (7), in N+ substrate silicon
The bottom surface of sheet (1) also connect be coated with one layer use metal make electrode as negative electrode (7), at N-silicon epitaxy layer (2)
It is coated with layer of silicon dioxide insulating barrier (5) on the outer surface of outer surface, the outer surface of P+ diffusion layer (3) and N+ diffusion layer (4).
Constant-current diode unit the most according to claim 2, it is characterised in that: the thickness (b) of P+ diffusion layer (3) with
And the thickness (a) of the N+ diffusion layer (4.1) for connecting anelectrode is all respectively smaller than the thickness (B) of N-silicon epitaxy layer (2).
Constant-current diode unit the most according to claim 3, it is characterised in that: for connecting the N+ diffusion layer of anelectrode
(4.1) thickness (a) is 0.01 times～0.2 times of the thickness (B) of N-silicon epitaxy layer (2).
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| CN201210409339.8A CN103779274B (en) | 2012-10-24 | 2012-10-24 | A kind of constant-current diode unit and preparation method thereof |
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| CN201210409339.8A CN103779274B (en) | 2012-10-24 | 2012-10-24 | A kind of constant-current diode unit and preparation method thereof |
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| CN105206683B (en) * | 2015-10-15 | 2018-07-10 | 苏州汉克山姆照明科技有限公司 | A kind of current regulator diode structure |
| CN105405873A (en) * | 2015-12-25 | 2016-03-16 | 电子科技大学 | Semiconductor device and manufacturing method thereof |
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| CN106952965B (en) * | 2017-03-27 | 2020-12-15 | 河北普兴电子科技股份有限公司 | Silicon epitaxial wafer and method for producing the same |
| CN110473871B (en) * | 2019-09-05 | 2024-03-26 | 成都矽能科技有限公司 | Constant current device and manufacturing method thereof |
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