CN201576684U

CN201576684U - Multi-channel current-extending semiconductor constant-current diode

Info

Publication number: CN201576684U
Application number: CN2009203120226U
Authority: CN
Inventors: 刘桥
Original assignee: Guizhou University
Current assignee: Guizhou University
Priority date: 2009-10-09
Filing date: 2009-10-09
Publication date: 2010-09-08
Anticipated expiration: 2019-10-09

Abstract

The utility model discloses a multi-channel current-extending semiconductor constant-current diode, which is characterized in that a P+ type semiconductor substrate (1) is extended with an N-type semiconductor area (2) and a P+ type semiconductor area (3); the P+ type semiconductor area (3) divides the N-type semiconductor area (2) into two PN junction isolation areas; and the upper bar of the isolation area is dispersed by a first P+ semiconductor area (4-1), a second P+ semiconductor area (4-2), a first N+ semiconductor area (5-1), a second N+ semiconductor area (5-2) and a third N+ semiconductor area (5-3), thus forming a multi-channel N-JFET and PNP transistor composite structure. In the utility model, the anode of the power supply is connected with the anode of a device and the cathode of the power supply is connected with the cathode of the device (also by load), thus realizing constant-current characteristic in one basic circuit. The magnitude of the constant-current value can be realized by the design of channel quantity of the N-JFET or the current gain of the PNP; and the structure can achieve the output constant current of series with the magnitude of 20mA to 100mA.

Description

Multichannel current extended type semiconductor constant-current diode

Technical field

The utility model relates to a kind of multichannel current extended type semiconductor constant-current diode that utilizes the physical process realization constant-current characteristic of semiconductor structure, belongs to two end technical field of semiconductor device.

Background technology

In the prior art, constant current supply is a kind of technology commonly used in electronic equipment and the device, generally adopts electronic module or integrated circuit to realize.Constant-current diode is a kind of semiconductor device of realizing constant-current source.International at present current regulator diode all is little electric current, low power product (output current: 0.5mA-10mA usually; ), the reference current that is mainly used in the electronic circuit is set.Because electric current, power are too small, can not directly drive load, application surface is limited.

Summary of the invention

The purpose of this utility model is: a kind of physical characteristic of utilizing semiconductor device structure to produce is provided, can directly drives the multichannel current extended type semiconductor constant-current diode of load, to overcome the deficiencies in the prior art.

Multichannel current extended type semiconductor constant-current diode of the present utility model, extension N type semiconductor zone on P+ N-type semiconductor N substrate, diffusion P+ N-type semiconductor N zone on the N type semiconductor zone, P+ N-type semiconductor N zone and P+ N-type semiconductor N substrate are communicated with, and the N type semiconductor zone is divided into the first PN junction isolated area, the second PN junction isolated area; The grid diffusion has a P+ semiconductor regions on the first PN junction isolated area, and diffusion has the 2nd P+ semiconductor regions on the second PN junction isolated area; Diffusion has a N+ semiconductor regions, the 2nd N+ semiconductor regions on the first PN junction isolated area between the P+ semiconductor regions of diffusion, and diffusion has the 3rd N+ semiconductor regions on the second PN junction isolated area; The 2nd N+ semiconductor regions is connected by metal electrode with the 3rd N+ semiconductor regions; P+ N-type semiconductor N zone, a N+ semiconductor regions and a P+ semiconductor regions are connected by electrode.

Many raceway grooves of N type JFET that P+ N-type semiconductor N substrate, N type semiconductor zone, P+ N-type semiconductor N zone, a P+ semiconductor regions, a N+ semiconductor regions and the 2nd N+ semiconductor regions constitute, the P+ semiconductor regions of P+ semiconductor regions, grid diffusion is as grid and source electrode--N+ semiconductor regions short circuit, the N+ semiconductor regions is drain electrode, forms the constant current of many ditches trace-stacking; The N+ semiconductor regions is connected to the transistorized base stage of PNP--N+ semiconductor regions; PNP emitter--the 2nd P+ semiconductor regions connects the external voltage positive pole, collector electrode--and the P+ Semiconductor substrate connects the external voltage negative pole.

Characteristics of the present utility model are the physical process realization constant-current characteristicses by semiconductor device structure, are not the technology of integrated circuit and electronic module (assembly).Electronic module assembly is to adopt electronic device (comprising integrated circuit) to press the circuit mode assembling on circuit board to constitute, and volume is bigger.Integrated circuit is electronic devices and components to be produced on the block semiconductor material complex structure of integrated circuit, particularly high-power integrated circuit by circuit mode.Integrated circuit and electronic module (assembly) all are the multiport electronic units, install and use inconvenience.The utility model utilizes the N-JFET field effect transistor as small current constant-current source, provides constant base current to the PNP transistor of serving as current expansion, amplifies (expansion) through PNP transistor proportional (linearity) and becomes big constant current.On semi-conducting material, adopt semiconductor device structure to realize its physical function.Compare with electronic module (assembly) technology with existing integrated circuits, the function that the utlity model has and utilize the Semiconductor Physics characteristic, realizes constant-current circuit, and it is simple in structure, adopt the directly advantage of constant-current driving load of current expansion method, find expression in some technical characterictics of existing diode, also can be used as constant-current power supply and directly drive load.

Description of drawings

Accompanying drawing 1 is a structural representation of the present utility model;

Accompanying drawing 2 is an electrode connection layout of the present utility model;

Accompanying drawing 3 is the vertical view of accompanying drawing 2;

Accompanying drawing 4 is an equivalent circuit diagram of the present utility model.

Reference numeral: P+ N-type semiconductor N substrate-1, N type semiconductor zone-2, first PN junction isolated area-2-1, second PN junction isolated area-2-2, P+ N-type semiconductor N zone-3, a P+ semiconductor regions-4-1, the 2nd P+ semiconductor regions-4-2, a N+ semiconductor regions-5-1, the 2nd N+ semiconductor regions-5-2, the 3rd N+ semiconductor regions-5-3, metal electrode-6, electrode-7.

Embodiment

Enforcement of the present utility model: as depicted in figs. 1 and 2, extension N type semiconductor zone 2 on P+ N-type semiconductor N substrate 1, diffusion P+ N-type semiconductor N zone 3 on N type semiconductor zone 2, P+ N-type semiconductor N zone 3 and P+ N-type semiconductor N substrate 1 are communicated with, and N type semiconductor zone 2 is divided into the first PN junction isolated area 2-1, the second PN junction isolated area 2-2; Grid diffuse out a plurality of P+ semiconductor regions 4-1 on the first PN junction isolated area 2-1, and diffusion has the 2nd P+ semiconductor regions 4-2 on the second PN junction isolated area 2-2; Diffusion has a N+ semiconductor regions 5-1, the 2nd N+ semiconductor regions 5-2 on the first PN junction isolated area 2-1 between the P+ semiconductor regions 4-1 of diffusion, and diffusion has the 3rd N+ semiconductor regions 5-3 on the second PN junction isolated area 2-2.According to Fig. 2, shown in Figure 3, each semiconductor regions perforate depositing metal also forms connection, and the 2nd N+ semiconductor regions 5-2 is connected by metal electrode 6 with the 3rd N+ semiconductor regions 5-3; P+ N-type semiconductor N zone 3, a N+ semiconductor regions 5-1 and a P+ semiconductor regions 4-1 are connected by electrode 7.

Equivalent electric circuit of the present utility model as shown in Figure 4, many raceway grooves of N type JFET that P+ N-type semiconductor N substrate 1, N type semiconductor zone 2-1, P+ N-type semiconductor N zone 3, a P+ semiconductor regions 4-1, a N+ semiconductor regions 5-1 and the 2nd N+ semiconductor regions 5-2 constitute, the one P+ semiconductor regions 4-1 of P+ semiconductor regions 3, grid diffusion is as grid and source electrode--a N+ semiconductor regions 5-1 short circuit, the 2nd N+ semiconductor regions 5-2 is drain electrode, forms the constant current of many ditches trace-stacking; The 2nd N+ semiconductor regions 5-2 is connected to the transistorized base stage of PNP--the 3rd N+ semiconductor regions 5-3; PNP emitter--the 2nd P+ semiconductor regions 4-2 connects the external voltage positive pole, and collector electrode--P+ Semiconductor substrate 1 connects the external voltage negative pole.

P+ N-type semiconductor N substrate 1 is as the transistorized collector electrode of PNP, be the negative pole of entire device simultaneously, second PN junction isolated area 2-2 that isolates and the 3rd N+ semiconductor regions 5-3 of diffusion are as the transistorized base stage of PNP, the 2nd P+ semiconductor regions 4-2 of diffusion is as the transistorized emitter of PNP, be the positive pole of entire device simultaneously, constitute the PNP transistor.The transistorized emitter of PNP is in forward bias, and base current is by the raceway groove conducting of N-JFET, and collector current begins to increase, when external voltage reaches certain numerical value, and the raceway groove pinch off of N-JFET, source, the saturated (I of drain current _DS=constant).I _B=I _DS, I _C=β I _B, β=constant (β 〉=10), the transistorized collector current of PNP is constant, I _D=I _C=β I _B=β _IDS

Device property of the present utility model is equivalent to a big electric current constant-current diode, and output current can reach the output constant current of 20mA～100mA series.

The grid of N-JFET field effect transistor is connected by metal electrode on the plane with source electrode, forms U _GS=0 constant-current source, the drain electrode of N-JFET field effect transistor is connected by metal electrode on the plane with the transistorized base stage of PNP, makes that aforesaid PNP transistor base current is constant, thereby makes collector current constant.

Claims

1. multichannel current extended type semiconductor constant-current diode, it is characterized in that: go up extension N type semiconductor zone (2) at P+ N-type semiconductor N substrate (1), go up diffusion P+ N-type semiconductor N zone (3) in N type semiconductor zone (2), P+ N-type semiconductor N zone (3) and P+ N-type semiconductor N substrate (1) are communicated with, and N type semiconductor zone (2) are divided into the first PN junction isolated area (2-1), the second PN junction isolated area (2-2); Going up diffusion in the first PN junction isolated area (2-1) has a P+ semiconductor regions (4-1), and going up diffusion in the second PN junction isolated area (2-2) has the 2nd P+ semiconductor regions (4-2); The first PN junction isolated area (2-1) between a P+ semiconductor regions (4-1) of diffusion goes up diffusion a N+ semiconductor regions (5-1), the 2nd N+ semiconductor regions (5-2), and going up diffusion in the second PN junction isolated area (2-2) has the 3rd N+ semiconductor regions (5-3); The 2nd N+ semiconductor regions (5-2) is connected by metal electrode (6) with the 3rd N+ semiconductor regions (5-3); P+ N-type semiconductor N zone (3), a N+ semiconductor regions (5-1) and a P+ semiconductor regions (4-1) are connected by electrode (7).