CN203457134U

CN203457134U - Metal-oxide field-effect transistor and bipolar transistor-contained mixed common-source common-base circuit

Info

Publication number: CN203457134U
Application number: CN201320123714.2U
Authority: CN
Inventors: 李奚鹏
Original assignee: SUZHOU LANGKUAN ELECTRONIC TECHNOLOGY Co Ltd
Current assignee: SUZHOU LANGKUAN ELECTRONIC TECHNOLOGY Co Ltd
Priority date: 2013-03-19
Filing date: 2013-03-19
Publication date: 2014-02-26
Anticipated expiration: 2023-03-19

Abstract

The utility model relates to a metal-oxide field-effect transistor and bipolar transistor-contained mixed common-source common-base circuit structure simulating an integrated circuit. The metal-oxide field-effect transistor and bipolar transistor-contained mixed common-source common-base circuit comprises two pairs of transistors. The first pair of transistors includes metal-oxide field-effect transistors; and grid electrodes of the metal-oxide field-effect transistors serve as signal input terminals and source electrodes are connected and then are connected to an upper terminal of a bias current source. The signals are inputted into the second pair of transistors from drain electrodes of the metal-oxide field-effect transistors; that is, the signals are inputted into emitting electrodes of bipolar transistors. Base electrodes of the bipolar transistors are connected with a fixed bias voltage, so that the bipolar transistors work in an amplification state all the time. Output signals are connected to collectors of the bipolar transistors; and output terminals are connected with two resistive loads and the other terminals of the resistive loads are connected with a power supply voltage. Firstly, the common-source common-base circuit converts an input voltage signal into a current signal; and secondly, the current signal flows through the two resistive loads to generate a voltage signal for outputting. With the circuit, respective advantages of the metal-oxide field-effect transistors and the bipolar transistors are fully utilized and performances are realized fully. Under the circumstances that no power consumption is increased, the edge characteristic of the output waveform can realize the good effect, so that a good output eye pattern can be obtained correspondingly.

Description

The mixing common source and base circuit of metal-oxide-semiconductor field effect t and bipolar transistor

Technical field

The utility model belongs to the technical field of analog integrated circuit, relates in particular to a kind of metal-oxide-semiconductor field effect t and bipolar transistor mixing common source and base circuit.

Background technology

Along with the development of semiconductor technology, single metal-oxide-semiconductor field effect t technology cannot adapt to day by day complicated integrated system in the demand of the aspects such as driving force and speed.This is needing the occasion of ultrahigh speed and large driven current density performance, and bipolar transistor is still a kind of technical scheme of having the advantage, but exists power consumption and the high shortcoming of area of chip.Therefore, no matter be metal-oxide-semiconductor field effect t device or bipolar device, do not possess covering delay one power space completely and require the adaptability reaching.Therefore BiCMOS (bipolar complementary metal oxide semiconductor) compatible technique just arises at the historic moment, and becomes best solution.

The mixing common source and base circuit of metal-oxide-semiconductor field effect t and bipolar transistor can be in the technical generation of bipolar complementary metal oxide semiconductor process compatible, again because its unique high speed performance, be applicable to the requirement of current optical fiber communication transfer of data, and can reduce power consumption.The mixing common source and base circuit of metal-oxide-semiconductor field effect t and bipolar transistor can be given full play to the advantage alone of metal-oxide-semiconductor field effect t and bipolar transistor on bipolar complementary metal oxide semiconductor compatible technique.

Utility model content

The utility model proposes the mixing common source and base circuit of a kind of metal-oxide-semiconductor field effect t and bipolar transistor, with respect to prior art, rising edge and the trailing edge time of signal can be reduced largely, in the situation that speed is certain, power consumption can be saved.In some cases, use characteristic is larger-size, and lower-cost technique also can reach the more circuit effect of advanced processes in other words conj.or perhaps.

A mixing common source and base circuit for metal-oxide-semiconductor field effect t and bipolar transistor, comprises pair of metal oxide field-effect pipe (M1, M2) and a pair of bipolar transistor (Q1, Q2); The signal input Input of grid of described metal-oxide-semiconductor field effect t (M1, M2), the source electrode of described metal-oxide-semiconductor field effect t (M1, M2) connects the upper end of bias current sources Itail after being connected; Signal is input to the emitter of described bipolar transistor (Q1, Q2) from described metal-oxide-semiconductor field effect t (M1, M2) drain electrode; The base stage of described bipolar transistor (Q1, Q2) connects a fixed bias voltage Vb, makes described bipolar transistor (Q1, Q2) always work in magnifying state; The signal output Output of collector electrode of described bipolar transistor (Q1, Q2).

Further, the collector electrode of described bipolar transistor (Q1, Q2) is also connected with two ohmic loads (R1, R2) one end, and described ohmic load (R1, R2) in addition one end connects supply voltage VDD.

Circuit structure, can utilize the manufacturing limit of semiconductor technology to greatest extent, and the operating rate of circuit is reached to maximum.Using metal-oxide-semiconductor field effect t as input signal end, can pass through layout design, reduce to greatest extent its resistance, and grid capacitance can remain unchanged.And as cobasis pipe, can utilize its large electric current mutual conductance efficiency with bipolar transistor, and then the impedance of seeing into from its emitter is very little, therefore can reduce the Miller effect that metal-oxide-semiconductor field effect t causes, further improves speed.Like this, even if larger-size in use characteristic, lower-cost technique also can reach the more circuit effect of advanced processes in other words conj.or perhaps, has saved to a great extent the cost of chip for processing.

The utility model has passed through chip manufacture, and testing authentication is respond well.

Accompanying drawing explanation

Fig. 1: mixed-metal oxides field effect transistor of the present utility model and bipolar transistor common source and base circuit diagram;

Fig. 2: the circuit diagram of the concrete application of the utility model common source and base circuit;

Embodiment

As depicted in figs. 1 and 2, the mixing common source and base circuit of a kind of metal-oxide-semiconductor field effect t and bipolar transistor, comprises pair of metal oxide field-effect pipe (M1, M2) and a pair of bipolar transistor (Q1, Q2); The signal input Input of grid of described metal-oxide-semiconductor field effect t (M1, M2), the source electrode of described metal-oxide-semiconductor field effect t (M1, M2) connects the upper end of bias current sources Itail after being connected; Signal is input to the emitter of described bipolar transistor (Q1, Q2) from described metal-oxide-semiconductor field effect t (M1, M2) drain electrode; The base stage of described bipolar transistor (Q1, Q2) connects a fixed bias voltage Vb, makes described bipolar transistor (Q1, Q2) always work in magnifying state; The signal output Output of collector electrode of described bipolar transistor (Q1, Q2).

The restriction that based semiconductor technique is manufactured, this circuit structure is applicable to have the BiCMOS technique of metal-oxide-semiconductor field effect t and bipolar transistor simultaneously.

Claims

1. a mixing common source and base circuit for metal-oxide-semiconductor field effect t and bipolar transistor, is characterized in that: comprise pair of metal oxide field-effect pipe (M1, M2) and a pair of bipolar transistor (Q1, Q2);

The signal input Input of grid of described metal-oxide-semiconductor field effect t (M1, M2), the source electrode of described metal-oxide-semiconductor field effect t (M1, M2) connects the upper end of bias current sources Itail after being connected;

Signal is input to the emitter of described bipolar transistor (Q1, Q2) from described metal-oxide-semiconductor field effect t (M1, M2) drain electrode;

The base stage of described bipolar transistor (Q1, Q2) connects a fixed bias voltage Vb, makes described bipolar transistor (Q1, Q2) always work in magnifying state;

The signal output Output of collector electrode of described bipolar transistor (Q1, Q2).

2. circuit as claimed in claim 1, is characterized in that: the collector electrode of described bipolar transistor (Q1, Q2) is also connected with two ohmic loads (R1, R2) one end, and described ohmic load (R1, R2) in addition one end connects supply voltage VDD.