CN202019300U - Voltage boosting device - Google Patents
Voltage boosting device Download PDFInfo
- Publication number
- CN202019300U CN202019300U CN2011200885331U CN201120088533U CN202019300U CN 202019300 U CN202019300 U CN 202019300U CN 2011200885331 U CN2011200885331 U CN 2011200885331U CN 201120088533 U CN201120088533 U CN 201120088533U CN 202019300 U CN202019300 U CN 202019300U
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- diode
- resistance
- power supply
- field effect
- triode
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Abstract
The utility model discloses a voltage boosting device, which is formed in a mode that a triode, a diode, a resistor, a MOS (Metal Oxide Semiconductor) field effect tube, a power supply and the like are connected electrically. The voltage boosting device is used for boosting a voltage to earth of a certain node in a control circuit to a required value. The voltage boosting device has the various advantages that the circuit is simple; the voltage boosting device is easy to assemble and is convenient to use; the application range is wide; and the like. Therefore, the voltage boosting device has wide application prospect and market prospect.
Description
Technical field
The utility model relates to the automatic control technology field, particularly a kind of voltage lifting device.
Background technology
In the electric control neighborhood system, usually need the voltage to earth of certain node is risen to certain numerical value, so that satisfy the demand for control of subsequent conditioning circuit.The electronic component of have voltage lifting device circuit complexity now, selecting for use is many.
The utility model content
For addressing the above problem, the utility model provides a kind of voltage lifting device.Only needing increases an element, just can rise to the voltage to earth of this some the numerical value of requirement, so that follow-up control circuit uses.
For achieving the above object, the technical solution of the utility model is as follows: a kind of voltage lifting device, comprise triode Q1, mos field effect transistor Q2, light-emitting diode D1, diode D2, D3 resistance R 1, resistance R 2, resistance R 3, resistance R 5, relay R 4, power supply VBB, power supply VCC, power vd D
Controlled voltage VE is connected to the base stage of described triode Q1, one end common ground of the source class of the emitter of described triode Q1 and described mos field effect transistor Q2 and resistance R 5, the grid of the other end of described resistance R 5 and described mos field effect transistor Q2 is electrically connected, power supply VBB is electrically connected at the collector electrode of A point and described triode Q1 by the described diode D1 of described resistance R 1 serial connection, power supply VCC is electrically connected by the collector electrode of described resistance R 2 with described triode Q1, anodal and the collector electrode of described triode Q1 of the negative pole of described light-emitting diode D1 and described diode D2 and an end of described resistance R 2 are electrically connected at the A point, the collector electrode of described triode Q1 is by described diode D2, described resistance R 3 is electrically connected with the grid of described mos field effect transistor Q2, the positive pole of described diode D3 is electrically connected to control signal VB, the negative pole of the negative pole of described diode D3 and described diode D2 is electrically connected, and described power vd D is electrically connected by the leakage level of described resistance R 4 with described mos field effect transistor Q2.
Described diode D1 is a light-emitting diode, and described diode D2, D3 are general-purpose diode, and the level of described power supply VCC is higher than the gate leve cut-in voltage of described mos field effect transistor Q2.
The level of described power supply VCC is higher than the level of described power supply VBB.
Owing to adopted technique scheme, the utlity model has following distinguishing feature:
1, circuit structure is simple, need not change the supply voltage of original VBB, is easy to assembling.
2, easy to use, applied range.
Description of drawings
Fig. 1-the utility model electrical schematic diagram.
The Q1-triode, the Q2-mos field effect transistor, D1-light-emitting diode, R1, R2, R3 are conventional, electric-resistance, R4-load resistance, D2, D3-general-purpose diode, VBB, VCC, VDD-DC power supply, the controlled voltage of VE--, VB--control signal.
Embodiment
The utility model is by triode Q1, light-emitting diode D1, and diode D2, diode D3, resistance R 1, R2, R3, R4, R5, mos field effect transistor Q2, power supply VBB, VCC, formations such as VDD are used at circuit the voltage to earth of certain node being risen to the numerical value of needs.
Q1 is a triode among the figure, and Q2 is a N type mos field effect transistor, and R1, R2, R3, R5 are conventional, electric-resistance, and resistance R 4 is loads of mos field effect transistor Q2.One of the collector electrode of the positive pole of the negative pole of light-emitting diode D1 and diode D2 and triode Q1 and resistance R 2 terminates at together, and the source class of an end of the emitting stage of triode and resistance R 5, mos field effect transistor Q2 is connected together, and is attempted by on the low level; Controlled voltage VE is from the ground level input of triode; Power supply VBB is by the positive pole of resistance R 1 sending and receiving optical diode D1; The end of power supply VCC connecting resistance R2; One of the negative pole of the negative pole of diode D2 and diode D3 and resistance R 3 terminates at together; Control signal VB connects the positive pole of diode D3; One end of the other end of resistance R 3 and resistance R 5 and the grid of mos field effect transistor are connected together; The grid of mos meets power vd D by load R4.Diode D2 and D3, resistance R 3 and R5 form an OR circuit, as long as the level of A point or control signal VB is a high level, are exactly high level at the grid of mos field effect transistor Q2, can make the Q2 conducting, and load R4 gets electric operation.
In circuit as shown in Figure 1, when controlled voltage VE is high level, triode Q1 conducting, the A point is a low level, light-emitting diode D1 is lighted.When VE is low level, the A point is a high level, this level makes the Q2 conducting by the grid of diode D2, resistance R 3 to mos field effect transistor Q2, and load R4 gets electric operation, but because the voltage of the power supply VBB in the circuit is lower, become lower when the high level process diode D2 that A is ordered, the grid of resistance R 3 back arrival Q2, be lower than the conducting voltage of mos field effect transistor Q2, can not make mos field effect transistor Q2 conducting, R4 can not get electric operation, makes the out of control function of controlled voltage VE.And the voltage of power supply VEE is not easy to change, increase a resistance R 2 at the A point for this reason, power supply VCC of another termination of resistance R 2, and the voltage of VCC is low level than the voltage height of VEE at controlled voltage VE, when the A point is high level, the power supply VCC that increases is improved by the level that resistance R 2 is ordered A, this level still can make its conducting by diode D2, when resistance R 3 backs arrive the grid of mos field effect transistor Q2, and load R4 gets electric operation.
Embodiment:
See also accompanying drawing 1.The model of triode Q1 can be 9013, and the model of mos field effect transistor Q2 can be 2sk1062, and the unblocked level of its grid is about 2.5V; D1 can be the light-emitting diode of multiple colors such as redness, and R4 is a relay, and resistance is 1k Europe, and VBB is 3.3V, and VCC is 9V, and VDD is 9V.
The utlity model has circuit simple, be easy to assembling, easy to use, plurality of advantages such as applied range are so have good prospects for application and market prospects.
Every interior any simple modification, equivalent variations and modification of perhaps according to technical spirit of the present utility model above scheme being done that does not break away from technical solutions of the utility model all still belongs within the utility model protection range.
Claims (3)
1. voltage lifting device, comprise triode (Q1), mos field effect transistor (Q2), light-emitting diode (D1), diode (D2), (D3) resistance (R1), resistance (R2), resistance (R3), resistance (R5), relay (R4), power supply VBB, power supply VCC, power vd D
It is characterized in that: controlled voltage VE is connected to the base stage of described triode (Q1), one end common ground of the source class of the emitter of described triode (Q1) and described mos field effect transistor (Q2) and resistance (R5), the grid of the other end of described resistance (R5) and described mos field effect transistor (Q2) is electrically connected, power supply VBB is connected in series described diode (D1) by described resistance (R1) and is electrically connected at the collector electrode of A point and described triode (Q1), power supply VCC is electrically connected by the collector electrode of described resistance (R2) with described triode (Q1), anodal and the collector electrode of described triode (Q1) of the negative pole of described light-emitting diode (D1) and described diode (D2) and an end of described resistance (R2) are electrically connected at the A point, the collector electrode of described triode (Q1) is by described diode (D2), described resistance (R3) is electrically connected with the grid of described mos field effect transistor (Q2), the positive pole of described diode (D3) is electrically connected to control signal VB, the negative pole of the negative pole of described diode (D3) and described diode (D2) is electrically connected, and described power vd D is electrically connected by the leakage level of described relay (R4) with described mos field effect transistor (Q2).
2. a kind of voltage lifting device as claimed in claim 1, it is characterized in that: described diode (D1) is a light-emitting diode, described diode (D2), (D3) are general-purpose diode, and the level of described power supply VCC is higher than the gate leve cut-in voltage of described mos field effect transistor (Q2).
3. a kind of voltage lifting device as claimed in claim 2, it is characterized in that: the level of described power supply VCC is higher than the level of described power supply VBB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200885331U CN202019300U (en) | 2011-03-30 | 2011-03-30 | Voltage boosting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200885331U CN202019300U (en) | 2011-03-30 | 2011-03-30 | Voltage boosting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202019300U true CN202019300U (en) | 2011-10-26 |
Family
ID=44812967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200885331U Expired - Lifetime CN202019300U (en) | 2011-03-30 | 2011-03-30 | Voltage boosting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202019300U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944378A (en) * | 2013-01-17 | 2014-07-23 | 赵恩海 | Simple auxiliary step-up circuit |
-
2011
- 2011-03-30 CN CN2011200885331U patent/CN202019300U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944378A (en) * | 2013-01-17 | 2014-07-23 | 赵恩海 | Simple auxiliary step-up circuit |
| CN103944378B (en) * | 2013-01-17 | 2016-07-06 | 盐城市惠众新能源科技有限公司 | A kind of simple and easy auxiliary boost circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: FULLSEE TECHNOLOGY CO., LTD. Free format text: FORMER NAME: BEIJING FULLSEE ELECTRONIC CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100070 Beijing, Fengtai District, South Fourth Ring Road West, No. ten, building 188, floor 6 Patentee after: Fullsee Technology Co., Ltd. Address before: 100070 Beijing, Fengtai District, South Fourth Ring Road West, No. ten, building 188, floor 6 Patentee before: Beijing Fullsee Electronic Co., Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20111026 |
|
| CX01 | Expiry of patent term |