CN103579307A - Novel diode component structure - Google Patents
Novel diode component structure Download PDFInfo
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- CN103579307A CN103579307A CN201210259585.XA CN201210259585A CN103579307A CN 103579307 A CN103579307 A CN 103579307A CN 201210259585 A CN201210259585 A CN 201210259585A CN 103579307 A CN103579307 A CN 103579307A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 18
- 230000005684 electric field Effects 0.000 claims description 11
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 description 28
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a novel diode component structure. The novel diode component structure is composed of a channel and a drift region. When a diode component is connected to reverse bias voltage, a pinch-off barrier formed by doped regions on the two sides of the channel blocks reverse currents, when the diode component is connected to forward bias voltage, the barrier in the channel is lowered so that the currents can pass through the barrier, and an adjustable channel parameter achieves relatively-low start voltage. The novel diode component structure is suitable for all vertical-structure diode components of semiconductor materials.
Description
Technical Field
The invention relates to the technical field of power electronics, and relates to electrical equipment in almost all application occasions, in particular to a novel diode device in the fields of alternating current motors, frequency converters, switching power supplies, traction transmission and the like.
Background
As important power semiconductor devices, diode devices mainly include those based on both PN junction barrier and schottky barrier. The PN junction potential barrier has relatively high potential barrier height, low reverse leakage current, but high forward conduction voltage drop and the problem of reverse recovery current; the schottky barrier has good forward characteristics, the problem of reverse recovery current does not exist, but when the schottky barrier bears a high reverse electric field, the schottky barrier is influenced by barrier lowering and a tunneling effect, so that reverse leakage current is greatly increased, and the reliability of long-term operation of the device is influenced. How to optimize and balance the forward and reverse characteristics of diode devices simultaneously is an important issue in semiconductor device design.
Disclosure of Invention
The invention provides a novel diode structure which is applicable to diode devices made of all semiconductor materials. Compared with the current diode based on Schottky barrier or direct PN junction barrier, the diode structure provided by the invention has the following characteristics:
1. significantly reduced leakage current. By adjusting the channel doping and width, the reverse leakage current can be significantly reduced.
2. A regulated forward turn-on voltage. With the change of the channel width and doping, the turn-on voltage can be adjusted and greatly reduced.
3. Good reverse recovery characteristics. The Schottky diode is unipolar under the forward conduction condition, current mainly flows through a channel, and no obvious minority carrier injection phenomenon exists, so that the Schottky diode has the same characteristic of no reverse recovery current as the Schottky diode.
4. The simple structure without the schottky junction contributes to the reliability of the device over long-term operation.
Drawings
FIG. 1 is a cross-sectional view of an inventive structure based on a doped direct implant;
FIG. 2 is a cross-sectional view of the inventive trench-based P-doping structure;
FIG. 3 is a cross-sectional view of a trench structure based on vertical doping only;
FIG. 4 is a cross-sectional view of an inventive sloped channel based structure;
FIG. 5 is a cross-sectional view of an inventive horizontal channel based structure;
FIG. 6 is a cross-sectional view of a horizontal channel structure including an insulating structure;
FIG. 7 is a cross-sectional view of a horizontal channel bordered by N +/P + doped regions;
FIG. 8 is a cross-sectional view of an N +/P + doped adjoining horizontal channel including an insulating structure;
fig. 9 is a schematic diagram of an example of a P-type diode corresponding to the structure of fig. 1.
Wherein,
1. a channel, a first semiconductor type;
2. a heavily doped region, a second semiconductor type;
3. a drift region of a first semiconductor type;
4. an electric field cut-off layer of a first semiconductor type;
5. a substrate, a first semiconductor type;
6. an ohmic contact layer of a first semiconductor type;
7. an anode metal;
8. a cathode metal;
9. the lateral channel indicating a doped region, the second semiconductor type;
10. an oxide.
Detailed description of the preferred embodiments
Example 1
Fig. 1 is a cross-sectional view of a novel diode device according to the present invention, which is described in detail with reference to fig. 1.
As shown in fig. 1, a diode device of a novel structure includes: a substrate 5, above which a drift region 3 is arranged; whether to add the electric field cut-off layer 4 above the substrate layer can be selected; the conductive channel 1 is positioned above the drift region 3 and is positioned between two adjacent heavily doped regions 2; the anode metal 7 is positioned on the uppermost surface of the device and is a device lead-out electrode; between the channel 1 and the anode metal 7 is a heavily doped ohmic contact layer 6; the cathode metal 8 is positioned at the lowest part of the device structure, is connected with the substrate 5 and leads out an electrode.
In this example, the first semiconductor type is an N-type semiconductor conductive material and the second semiconductor type is a P-type semiconductor material, thus forming an N-type diode; one possible manufacturing process includes the steps of:
firstly, determining whether an electric field stop layer 4 is required or not, and growing and forming the stop layer 4 above an N-type substrate 5; (optional)
Secondly, continuing to grow upward epitaxy to respectively obtain a drift region 3 and N-type epitaxy corresponding to the concentration and the length of the channel;
directly doping P-type doping on the upper surface of the device at a specified position by using an ion implantation or diffusion mode to form a P-type heavily doped region 2, and simultaneously obtaining a channel 1 clamped between the P-type doped regions;
fourthly, doping high-concentration N-type doping on the surface of the channel 1 in an ion implantation or diffusion mode or an epitaxial mode or other modes to obtain an ohmic contact layer 6;
and fifthly, depositing metal on the upper surface and the lower surface of the device respectively to form ohmic contact, obtaining anode metal 7 and cathode metal 8, and leading out electrodes, as shown in figure 1.
Example 2
Fig. 2 is a cross-sectional view of a novel diode device according to the present invention, which is described in detail with reference to fig. 2.
As shown in fig. 2, a diode device of a novel structure includes: a substrate 5, above which a drift region 3 is arranged; whether to add the electric field cut-off layer 4 above the substrate layer can be selected; the conductive channel 1 is positioned above the drift region 3 and is positioned between two adjacent heavily doped regions 2; the anode metal 7 is positioned in the groove on the uppermost surface of the device and above the heavily doped region 2 and is a device lead-out electrode; between the channel 1 and the anode metal 7 is a heavily doped ohmic contact layer 6; the cathode metal 8 is positioned at the lowest part of the device structure, is connected with the substrate 5 and leads out an electrode.
In this example, the first semiconductor type is an N-type semiconductor conductive material and the second semiconductor type is a P-type semiconductor material, thus forming an N-type diode; one possible manufacturing process includes the steps of:
firstly, determining whether an electric field stop layer 4 is required or not, and growing and forming the stop layer 4 above an N-type substrate 5; (optional)
Secondly, continuing to grow upward epitaxy to respectively obtain a drift region 3 and N-type epitaxy corresponding to the concentration and the length of the channel;
etching at a specified position to obtain a groove for doping injection;
fourthly, performing lateral and vertical P-type doping injection in the obtained groove to form a P-type heavily doped region 2 and obtain a channel 1 clamped between the P-type heavily doped regions;
fifthly, doping high-concentration N-type doping on the surface of the channel 1 in an ion implantation or diffusion mode or an epitaxial mode or other modes to obtain an ohmic contact layer 6;
sixthly, depositing metal on the upper surface of the device and in the groove to form ohmic contact to obtain anode metal 7; ohmic contact is made on the lower surface of the device to produce cathode metal 8, and an electrode is led out, as shown in fig. 2.
Fig. 3 is a cross-sectional view of a structure of a novel diode device of the present invention, which is based on fig. 2, and the structure is that lateral implantation is not performed in a trench, and only vertical implantation is performed to form a P-doped region 2 and a channel 1.
Fig. 4 is a cross-sectional view of a structure of a novel diode device of the present invention, which is based on fig. 2, and adopts a tilted etching manner in the etching step, so as to obtain a tilted channel 1.
Example 3
Fig. 5 is a cross-sectional view of a novel diode device according to the present invention, which is described in detail with reference to fig. 5.
As shown in fig. 5, a diode device of a novel structure includes: a substrate 5, above which a drift region 3 is arranged; whether to add the electric field cut-off layer 4 above the substrate layer can be selected; the conductive channel 1 is connected with the drift region 3 and is positioned between the heavily doped region 2 and the surface heavily doped region 9 which are adjacent up and down; the anode metal 7 is positioned on the uppermost surface of the device, is respectively connected with the surface doping region 9, the channel 1 and the heavy doping region 2, and is a device extraction electrode; between the channel 1 end and the anode metal 7 is a heavily doped ohmic contact layer 6; the cathode metal 8 is positioned at the lowest part of the device structure, is connected with the substrate 5 and leads out an electrode.
In this example, the first semiconductor type is an N-type semiconductor conductive material and the second semiconductor type is a P-type semiconductor material, thus forming an N-type diode; one possible manufacturing process includes the steps of:
firstly, determining whether an electric field stop layer 4 is required or not, and growing and forming the stop layer 4 above an N-type substrate 5; (optional)
Secondly, continuing to grow upward epitaxially to respectively obtain drift regions 3, and carrying out P-type doping on the surfaces of the drift regions to obtain heavily doped regions 2;
thirdly, continuing to grow upwards according to the concentration and width design of the channel to obtain an N-type epitaxy;
fourthly, doping P type doping on the upper surface of the device at a designated position by utilizing an ion implantation or diffusion mode or an epitaxial mode or other modes to form a surface heavily doped region 9, thereby obtaining a channel 1 clamped between the doped region 2 and the doped region 9;
fifthly, doping high-concentration N-type doping on the surface of a device corresponding to the terminal of the channel 1 in an ion implantation or diffusion mode to obtain an ohmic contact layer 6, and etching downwards in the middle to expose the heavily doped region 2;
and sixthly, depositing metal on the upper surface and the lower surface of the device respectively to form ohmic contact, obtaining anode metal 7 and cathode metal 8, and leading out electrodes, as shown in figure 5.
Fig. 6 is a structural cross-sectional view of a novel diode device of the present invention, which is configured on the basis of fig. 5, and an oxide 10 is additionally added between a surface heavily doped region 9 of the device surface and the ohmic contact layer 6 as an isolation.
Fig. 7 is a cross-sectional view of a novel diode device of the present invention, which is constructed on the basis of fig. 5, and is connected to the heavily doped region 2 when the ohmic contact layer 6 is formed.
Fig. 8 is a cross-sectional view of a novel diode device of the present invention, which is configured on the basis of fig. 5, with oxide 10 isolation added and ohmic contact layer 6 connected to heavily doped region 2.
Example 4
Fig. 1 to 8 are cross-sectional views illustrating a plurality of N-type diodes, each of which may correspond to a corresponding P-type diode structure. At this time, the first semiconductor type is a P-type semiconductor conductive material, the second semiconductor type is an N-type semiconductor conductive material, and the positions of the anode metal and the cathode metal are switched to obtain a corresponding P-type diode, which will be described by taking the first diode structure shown in fig. 1 as an example.
Fig. 9 is a cross-sectional view of a novel diode device according to the present invention, which corresponds to the N-type diode structure shown in fig. 1, and is described in detail with reference to fig. 9.
As shown in fig. 9, a diode device of a novel structure includes: a substrate 5, above which a drift region 3 is arranged; whether to add the electric field cut-off layer 4 above the substrate layer can be selected; the conductive channel 1 is positioned above the drift region 3 and is positioned between two adjacent heavily doped regions 2; the cathode metal 8 is positioned on the uppermost surface of the device and is a device extraction electrode; between the channel 1 and the cathode metal 8 is a heavily doped ohmic contact layer 6; the anode metal 7 is positioned at the lowest part of the device structure, is connected with the substrate 5 and leads out an electrode.
In this example, the first semiconductor type is a P-type semiconductor conductive material and the second semiconductor type is an N-type semiconductor material, thus forming a P-type diode; one possible manufacturing process includes the steps of:
firstly, determining whether to generate a cut-off layer 4 above a P-type substrate 5 according to whether the electric field cut-off layer 4 is needed; (optional)
Secondly, continuing to grow upward epitaxy to respectively obtain a drift region 3 and a P-type epitaxy corresponding to the concentration and the length of the channel;
directly doping N-type doping on the upper surface of the device at a designated position by using an ion implantation or diffusion mode to form an N-type heavily doped region 2, and simultaneously obtaining a channel 1 clamped between the N-type heavily doped regions 2;
fourthly, doping high-concentration P-type doping on the surface of the channel 1 in an ion implantation or diffusion mode to obtain an ohmic contact layer 6;
and fifthly, depositing metal on the upper surface and the lower surface of the device respectively to form ohmic contact, obtaining cathode metal 8 and anode metal 7, and leading out electrodes, as shown in fig. 9.
Fig. 2 to 8 correspond to the respective P-type diode structures in the same manner, and are not described in detail.
While the invention has been described in connection with the above examples, other examples may be used and the invention is not limited to the specific examples described and is therefore to be limited by the scope of the appended claims.
Claims (5)
1. A novel diode device structure is characterized in that: the method comprises the following steps:
the channel is formed by adjacent doping regions of corresponding types, required barrier height is formed at the same time, and one end of the diode is formed through ohmic contact;
and a drift region made of a semiconductor material, connected to the channel, and having the other end of the diode obtained through the substrate and the ohmic contact.
2. The diode device of claim 1, wherein: the diode device may employ any semiconductor material including silicon, silicon carbide, gallium nitride, diamond, and the like.
3. The diode device of claim 1, wherein: the diode device may be a P-type diode or an N-type diode.
4. The diode device of claim 1, wherein: the semiconductor channel can be in a vertical type, a transverse type and a tilted type structure, wherein the doping can be uniform doping or non-uniform doping.
5. The diode device of claim 1, wherein: the semiconductor drift region may or may not include an electric field stop layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210259585.XA CN103579307A (en) | 2012-07-24 | 2012-07-24 | Novel diode component structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210259585.XA CN103579307A (en) | 2012-07-24 | 2012-07-24 | Novel diode component structure |
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|---|---|
| CN103579307A true CN103579307A (en) | 2014-02-12 |
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| CN201210259585.XA Pending CN103579307A (en) | 2012-07-24 | 2012-07-24 | Novel diode component structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659112A (en) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | Groove type diode structure for reducing dynamic loss |
| CN105185820A (en) * | 2015-08-18 | 2015-12-23 | 华中科技大学 | Semiconductor cut-out switch based on silicon carbide, and manufacturing method thereof |
| CN108878415A (en) * | 2017-05-12 | 2018-11-23 | 展讯通信（上海）有限公司 | Simulation input/output unit layout design method |
| CN109860273A (en) * | 2018-12-29 | 2019-06-07 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN109888024A (en) * | 2018-12-29 | 2019-06-14 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110248286A1 (en) * | 2010-04-08 | 2011-10-13 | Hitachi, Ltd. | Semiconductor device |
-
2012
- 2012-07-24 CN CN201210259585.XA patent/CN103579307A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110248286A1 (en) * | 2010-04-08 | 2011-10-13 | Hitachi, Ltd. | Semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659112A (en) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | Groove type diode structure for reducing dynamic loss |
| CN105185820A (en) * | 2015-08-18 | 2015-12-23 | 华中科技大学 | Semiconductor cut-out switch based on silicon carbide, and manufacturing method thereof |
| CN105185820B (en) * | 2015-08-18 | 2017-12-12 | 华中科技大学 | A kind of semiconductor opening switch based on carborundum and preparation method thereof |
| CN108878415A (en) * | 2017-05-12 | 2018-11-23 | 展讯通信（上海）有限公司 | Simulation input/output unit layout design method |
| CN109860273A (en) * | 2018-12-29 | 2019-06-07 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN109888024A (en) * | 2018-12-29 | 2019-06-14 | 厦门芯光润泽科技有限公司 | MPS diode component and preparation method thereof |
| CN109860273B (en) * | 2018-12-29 | 2024-04-02 | 厦门芯光润泽科技有限公司 | MPS diode device and preparation method thereof |
| CN109888024B (en) * | 2018-12-29 | 2024-04-02 | 厦门芯光润泽科技有限公司 | MPS diode device and preparation method thereof |
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Application publication date: 20140212 |