CN106067420A - A kind of constant-current diode unit and preparation method thereof - Google Patents
A kind of constant-current diode unit and preparation method thereof Download PDFInfo
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- CN106067420A CN106067420A CN201610694673.0A CN201610694673A CN106067420A CN 106067420 A CN106067420 A CN 106067420A CN 201610694673 A CN201610694673 A CN 201610694673A CN 106067420 A CN106067420 A CN 106067420A
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000009792 diffusion process Methods 0.000 claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 238000000407 epitaxy Methods 0.000 claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000000704 physical effect Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
nullThe invention discloses a kind of constant-current diode unit and preparation method thereof，The present invention grows N silicon epitaxy layer on N+e silicon substrate，N silicon epitaxy layer diffuses out two highly doped P+ diffusion layers and two for connecting the N+ diffusion layer of negative electrode，The thickness N+ diffusion layer for connecting anelectrode less than N silicon epitaxy layer thickness is diffused out on N silicon epitaxy layer between two P+ diffusion layers，Then for connect on the N+ diffusion layer of anelectrode connect a metal electrode as anelectrode，Between the N+ diffusion layer connecting negative electrode, a metal electrode is connected as negative electrode each P+ diffusion layer and one，Also connect covering layer of metal electrode in the bottom surface of N+e silicon substrate as negative electrode simultaneously，At N silicon epitaxy layer、It is coated with silicon dioxide insulating layer on the outer surface of P+ diffusion layer and N+ diffusion layer.The present invention has low constant current and starts the advantage such as voltage and the constant current of wide-range voltage and electric physical property at a high speed.
Description
Technical field
The present invention relates to a kind of constant-current diode unit and preparation method thereof, belong to constant-current diode (CRD) and make
Technical field.
Background technology
Constant current supply is a kind of technology conventional in electronic equipment and device, general employing electronic circuit or electronic devices and components
Realize.Current regulator diode (CRD) is a kind of base semiconductor device realizing constant-current source.There is low constant current and start voltage,
Electric physical property at a high speed.The reference current being mainly used in electronic circuit sets.Directly drive constant current load, it is achieved permanent
Current and power supply.At present, generally to there is the startup voltage of constant current higher, constant for constant-current diode of the prior art
The shortcomings such as voltage change range corresponding during electric current is narrower, therefore still can not meet the needs of use.
Summary of the invention
It is an object of the invention to, it is provided that a kind of constant current starts the electricity that voltage is relatively low, corresponding when constant current
Buckling wider range and simple in construction, easy to make, the constant-current diode unit of stable and reliable working performance and system thereof
Make method, to overcome the deficiencies in the prior art.
The technical scheme is that and be achieved in that: the manufacture method of a kind of constant-current diode unit of the present invention
It is: use the highly doped N-type semiconductor silicon chip of low-resistance as N+e silicon substrate, then on N+e silicon substrate, pass through quasiconductor
Growth technique produces the N-silicon epitaxy layer that high resistant is low-doped, is made respectively by quasiconductor diffusion technique on N-silicon epitaxy layer
Go out two highly doped P+ diffusion layers and two for connecting the highly doped N+ diffusion layer of negative electrode, make this be used for connecting negative electricity
The N+ diffusion layer of pole connects with N+e silicon substrate, and makes each P+ diffusion layer and each N+ diffusion layer for connecting negative electrode
Mutually isolated by N-silicon epitaxy layer each other, diffuse out a thickness on the N-silicon epitaxy layer between two P+ diffusion layers simultaneously
Degree is less than the N+ diffusion layer for connecting anelectrode of N-silicon epitaxy layer thickness, then at the N+ diffusion layer for connecting anelectrode
One metal electrode of upper connection is as anelectrode, each P+ diffusion layer and one between the N+ diffusion layer connecting negative electrode
All connect a metal electrode as negative electrode, also connect covering layer of metal electrode simultaneously in the bottom surface of N+e silicon substrate and make
For negative electrode, on the outer surface of outer surface, the outer surface of P+ diffusion layer and the N+ diffusion layer of N-silicon epitaxy layer, then cover one
Layer silicon dioxide insulating layer.
A kind of constant-current diode unit of the present invention according to said method structure is, this constant-current diode unit bag
Include N+e silicon substrate, N+e silicon substrate is provided with one layer of N-silicon epitaxy layer, N-silicon epitaxy layer is provided with two P+ diffusions
Layer and two N+ diffusion layers being used for connecting negative electrode, this is used for the bottom connecting the N+ diffusion layer of negative electrode and N+e substrate silicon
Sheet connects, and the N-silicon epitaxy layer between two P+ diffusion layers is provided with the N+ diffusion layer for connecting anelectrode, for even
Connect to connect on the N+ diffusion layer of anelectrode and have the electrode using metal to make as anelectrode, in each P+ diffusion layer and a use
All connect between the N+ diffusion layer connecting negative electrode and have an electrode using metal to make as negative electrode, at N+e substrate
The bottom surface of silicon chip also connect be coated with one layer use metal make electrode as negative electrode, at outer surface, the P of N-silicon epitaxy layer
It is coated with layer of silicon dioxide insulating barrier on the outer surface of+diffusion layer and the outer surface of N+ diffusion layer.
The thickness of the thickness of above-mentioned P+ diffusion layer and the N+ diffusion layer for connecting anelectrode is all respectively smaller than N-silicon
The thickness of epitaxial layer.
0.01 times～0.2 times of the thickness that thickness is N-silicon epitaxy layer of the above-mentioned N+ diffusion layer for connecting anelectrode.
Owing to have employed technique scheme, the present invention uses cell channel structure, and this cell channel is as proper tetrad
This constant current unit, during use, can pass through linear expansion (i.e. 1, multiple-unit in parallel；2, linear amplification) mode, constitute various perseverance
The device of stream parameter.This unit mode of the present invention makes to be formed the manufacture process standardization of CRD series of products, is especially suitable for
In large-scale production.The characteristic of device of the present invention is the conducting of forward constant current, has low constant current and starts voltage and in perseverance
The advantage that during stream, voltage change range is wide, and there is electric physical property at a high speed.The technical characterstic of the present invention has following side
Face:
1, the constant current diode unit of the present invention is vertical channel structure, and conducting channel is short, can be effectively improved constant current diode
Electric response speed, reduce corresponding voltage change range when starting voltage and increase constant current of constant current, through surveying
Examination, the constant current diode that the startup voltage ratio of the constant current of the present invention is traditional is low 0.2～5 volt, and during its constant current, institute is right
The width of the voltage change range answered is 2～5 times of conventional constant current diode, and the length of the constant current diode unit of the present invention
Time service performance is more stable and reliable；
2, the present invention can be according to the needs used, the adjusting process parameter in the usual way when making, and can obtain different constant
The series unit of current parameters；This unit is carried out parallel combination, constant current value can be extended.
, the present invention be the semi-conductor electronic device of a kind of two-terminal, its characteristic is forward constant current, has constant current and opens
Galvanic electricity forces down, the electric physical property of high speed, and its characteristic curve is similar to the inverse function of PN junction characteristic (see the present invention shown in accompanying drawing 2
Constant-current diode element characteristics curve synoptic diagram)；
4, the present invention uses the controllable method in semiconductor PN space-charge region to realize being automatically adjusted of channel resistance.
Accompanying drawing explanation
Fig. 1 is the structural representation of the constant-current diode unit of the present invention；
Fig. 2 is the constant-current diode element characteristics curve synoptic diagram of the present invention；
Fig. 3 is the equivalent circuit diagram of the constant-current diode unit of the present invention.
Description of reference numerals: 1-N+e silicon substrate, 2-N-silicon epitaxy layer, 3-P+ diffusion layer, 4-connects negative electrode N+ diffusion
Layer, 4.1-connects the N+ diffusion layer of anelectrode, 5-silicon dioxide insulating layer, 6-anelectrode, 7-negative electrode, and a-connects anelectrode
The thickness of N+ diffusion layer, the thickness of b-P+ diffusion layer, the thickness of B-N-silicon epitaxy layer；IH-constant current value, VK-enter perseverance
Determine magnitude of voltage (corresponding 0.8I corresponding during current valueH), VSThe lower voltage limit of-constant current, VERation the power supply on-constant current
Pressure, VB-forward break down voltage, VR-breakdown reverse voltage, C-be depletion region equivalent capacity (be PN junction reverse time depletion layer
Total barrier capacitance), D-equivalence constant-current diode (CRD), R-be N-channel Current Zone equivalent resistance (i.e. N-silicon epitaxy layer electricity
The dead resistance that stream raceway groove exists, for semiconductor resistor).
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings, but any not as to the present invention
Limit.
Embodiments of the invention: when implementing the manufacture method of a kind of constant-current diode unit of the present invention, can use
Diffusion technique or the growth technique of existing semiconductor transistor make, and during making, first use the N-type half that low-resistance is highly doped
Conductor silicon chip as N+e silicon substrate, then on N+e silicon substrate by existing semiconductor growing process produce one high
Hindering low-doped N-silicon epitaxy layer, the thickness B of N-silicon epitaxy layer is the 1/3～2/3 of N+e silicon substrate thickness, then at N-silicon
Existing quasiconductor diffusion technique is used to produce two highly doped P+ diffusion layers and two respectively for connecting on epitaxial layer
The highly doped N+ diffusion layer of negative electrode, the diffusion concentration of its P+ diffusion layer and N+ diffusion layer can be by existing conventional diffusion technique
Parameter determination, makes this be diffused into for the N+ diffusion layer connecting negative electrode simultaneously and connects with N+e silicon substrate, and make each P+ expand
Dissipate layer and each N+ diffusion layer for connecting negative electrode is mutually isolated by N-silicon epitaxy layer each other, expand at two P+ simultaneously
Dissipate the N+ expansion for connecting anelectrode diffusing out a thickness on the N-silicon epitaxy layer between layer less than N-silicon epitaxy layer thickness
Dissipate layer, then connect electrode that metal makes on the N+ diffusion layer of anelectrode as anelectrode, at each P for connecting
+ diffusion layer and one connect electrode that a metal makes as negative electrode between the N+ diffusion layer connecting negative electrode,
Also connect in the bottom surface of N+e silicon substrate simultaneously and cover electrode that layer of metal makes as negative electrode, due to N+ diffusion layer and N
+ e silicon substrate is highly doped, low resistance electrode, and therefore the two electrode is connection；Then at outer surface, the P of N-silicon epitaxy layer
Cover layer of silicon dioxide insulating barrier on the outer surface of+diffusion layer and the outer surface of N+ diffusion layer.
According to said method build the present invention a kind of constant-current diode unit structural representation as shown in Figure 1,
The characteristic curve schematic diagram of its constant-current diode unit as shown in Figure 2, the equivalent circuit diagram of its constant-current diode unit such as
Shown in Fig. 3, the constant-current diode unit of the present invention include using existing N+e silicon substrate 1 as substrate, during making, at N
+ e silicon substrate 1 is provided with one layer of N-silicon epitaxy layer 2, is provided with two P+ diffusion layers 3 and two for even on N-silicon epitaxy layer 2
Connecing the N+ diffusion layer 4 of negative electrode, this bottom being used for connecting the N+ diffusion layer 4 of negative electrode is connected with N+e silicon substrate 1, two
N-silicon epitaxy layer 2 between individual P+ diffusion layer 3 is provided with the N+ diffusion layer 4.1 for connecting anelectrode, the thickness of its P+ diffusion layer 3
The thickness a of degree b and the N+ diffusion layer 4.1 for connecting anelectrode is respectively smaller than the thickness B of N-silicon epitaxy layer 2, during making,
Preferably the thickness a being used for connecting the N+ diffusion layer 4.1 of anelectrode is made as 0.01 times～0.2 of thickness B of N-silicon epitaxy layer 2
Times；Then there iing the electrode using metal to make as anelectrode 6 for connecting to connect on the N+ diffusion layer 4.1 of anelectrode,
Each P+ diffusion layer 3 connects an electrode using metal to make with one between the N+ diffusion layer 4 being connected negative electrode
As negative electrode 7, also connect in the bottom surface of N+e silicon substrate 1 and cover one layer of electrode using metal to make as negative electrode 7,
The outer surface of outer surface, the outer surface of P+ diffusion layer 3 and the N+ diffusion layer 4 of N-silicon epitaxy layer 2 is coated with one layer of titanium dioxide
Silicon insulating barrier 5.
Below the operation principle of the constant current diode unit of the present invention is specifically described:
Referring to the structural representation of the constant-current diode unit of the present invention shown in accompanying drawing 1, when applied voltage is connected to positive electricity
Time between pole 6 and negative electrode 7, the PN junction formed between P+ diffusion layer 3 and N-silicon epitaxy layer 2 is reverse, due to N-silicon epitaxy layer 2
Potential distribution, near the width of depletion layer (N-epitaxial layer 2 top) of anelectrode 6 more than near negative electrode 7(N-epitaxial layer 2
Bottom) width；When applied voltage is relatively low when, the raceway groove (N-epitaxial layer 2) between P+ diffusion layer 3 is semiconductor electricity
Resistance, electric current flows through from raceway groove and (is flowed to N+e silicon substrate 1 and negative electrode 7 is born to power supply by positive source by anelectrode 6
Pole, such as the 0-V in characteristic curveKSection)；Along with the raising of applied voltage, the width of depletion layer is continuously increased, P+ diffusion layer 3 it
Between raceway groove (N-epitaxial layer 2) constantly reduce, until first top closes up (pinch off), at this moment channel resistance increase, current saturation,
Initially enter constant current (VK-VSSection)；Applied voltage improves further, and raceway groove pinch off extends, and channel resistance is at the same voltage of certain limit
Proportional increase, electric current is constant in certain voltage excursion (such as the V in characteristic curveS-VESection), its constant current value IH
It is shown below:
IH=constant=V ↑/R ↑, (in formula, V is applied voltage value, and R is the dead resistance that N-silicon epitaxy layer current channel exists, for
Semiconductor resistor)；
Knowable to above formula, by the constant current linear superposition that multiple-unit of the present invention is in parallel, i.e. can realize the constant of expansion
Current value.
Claims (4)
1. the manufacture method of a constant-current diode unit, it is characterised in that: use the N-type semiconductor silicon chip that low-resistance is highly doped
As N+e silicon substrate, then produced outside the N-silicon that high resistant is low-doped by semiconductor growing process on N+e silicon substrate
Prolong layer, on N-silicon epitaxy layer by quasiconductor diffusion technique produce respectively two highly doped P+ diffusion layers and two for
Connect the highly doped N+ diffusion layer of negative electrode, make this connect with N+e silicon substrate for the N+ diffusion layer connecting negative electrode, and
Make each P+ diffusion layer and each N+ diffusion layer for connecting negative electrode mutually isolated, simultaneously by N-silicon epitaxy layer each other
Diffuse out on N-silicon epitaxy layer between two P+ diffusion layers a thickness less than N-silicon epitaxy layer thickness for connect just
The N+ diffusion layer of electrode, is then connecting metal electrode as anelectrode for connecting on the N+ diffusion layer of anelectrode,
Each P+ diffusion layer and one connect a metal electrode as negative electrode between the N+ diffusion layer connecting negative electrode, with
Time in the bottom surface of N+e silicon substrate also connect covering layer of metal electrode as negative electrode, then in the appearance of N-silicon epitaxy layer
Cover layer of silicon dioxide insulating barrier on the outer surface of face, the outer surface of P+ diffusion layer and N+ diffusion layer.
2. a constant-current diode unit, including N+e silicon substrate (1), it is characterised in that: set on N+e silicon substrate (1)
Have one layer of N-silicon epitaxy layer (2), N-silicon epitaxy layer (2) is provided with two P+ diffusion layers (3) and two be used for connecting negative electrode
N+ diffusion layer (4), this bottom being used for connecting the N+ diffusion layer (4) of negative electrode is connected with N+e silicon substrate (1), at two P
N-silicon epitaxy layer (2) between+diffusion layer (3) is provided with the N+ diffusion layer (4.1) for connecting anelectrode, for just connecting
There is the electrode using metal to make the N+ diffusion layer (4.1) of electrode upper connection as anelectrode (6), each P+ diffusion layer (3)
All connect between the N+ diffusion layer (4) being connected negative electrode with one and have an electrode using metal to make as negative electrode
(7), also connect in the bottom surface of N+e silicon substrate (1) and be coated with one layer of electrode using metal to make as negative electrode (7),
It is coated with one layer two on the outer surface of the outer surface of N-silicon epitaxy layer (2), the outer surface of P+ diffusion layer (3) and N+ diffusion layer (4)
Insulating layer of silicon oxide (5).
Constant-current diode unit the most according to claim 2, it is characterised in that: the thickness (b) of P+ diffusion layer (3) with
And the thickness (a) of the N+ diffusion layer (4.1) for connecting anelectrode is all respectively smaller than the thickness (B) of N-silicon epitaxy layer (2).
Constant-current diode unit the most according to claim 3, it is characterised in that: for connecting the N+ diffusion layer of anelectrode
(4.1) thickness (a) is 0.01 times～0.2 times of the thickness (B) of N-silicon epitaxy layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610694673.0A CN106067420A (en) | 2016-08-22 | 2016-08-22 | A kind of constant-current diode unit and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610694673.0A CN106067420A (en) | 2016-08-22 | 2016-08-22 | A kind of constant-current diode unit and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106067420A true CN106067420A (en) | 2016-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610694673.0A Withdrawn CN106067420A (en) | 2016-08-22 | 2016-08-22 | A kind of constant-current diode unit and preparation method thereof |
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| Country | Link |
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| CN (1) | CN106067420A (en) |
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2016
- 2016-08-22 CN CN201610694673.0A patent/CN106067420A/en not_active Withdrawn
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Application publication date: 20161102 |