CN208385408U

CN208385408U - A kind of low low residual voltage ESD surge protective device for holding structure

Info

Publication number: CN208385408U
Application number: CN201821100065.3U
Authority: CN
Inventors: 张猛; 梁令荣
Original assignee: Bourne Semiconductor (shenzhen) Co Ltd
Current assignee: Bourne Semiconductor (shenzhen) Co Ltd
Priority date: 2018-07-12
Filing date: 2018-07-12
Publication date: 2019-01-15
Anticipated expiration: 2028-07-12

Abstract

The utility model discloses a kind of low low residual voltage ESD surge protective device for holding structure, the drop including being connected by electrical connection holds pipe D1, TVS pipe D4, Schottky tube D2, NPN pipe T1 and positive drop and holds pipe D3；Wherein drop holds pipe D3 offer forward current access；D1 and T1 constitutes PNPN structure, for main discharge channel；TVS pipe D4 provides cut-in voltage.The utility model is designed reasonably; the unidirectional big rapid protection device for returning SCR structure realized realizes the SCR structure protection device of extremely low capacitor by dual trench process; it can satisfy current low residual voltage protection demand, and the device has the characteristics that low capacitor, low clamper and big surge through-current capability.

Description

A kind of low low residual voltage ESD surge protective device for holding structure

Technical field

The utility model belongs to semiconductor components and devices device, more specifically to a kind of low low residual voltage ESD for holding structure Surge protective device.

Background technique

Since technique limits, longitudinal low residual voltage device is limited by Zener+R2R structure, and residual voltage is difficult to decrease always.With Signal port protection is influenced to die down by afterflow problem, and SCR structure becomes the most effective mode for reducing device residual voltage, however for reality The now device of unidirectional SCR structure, kinds of processes be used to make the protection device of SCR structure, have their own advantages, more due to having used Layer structure realizes that upper technique becomes extremely complex in device forward direction.Planar structure is in contrast simply very much, but in order to take Obtain the breakdown voltage of needs movement, it has to reduce breakdown voltage using low doping concentration is compared, capacitor is caused to be difficult to do in this way To very low.

Utility model content

In view of the deficienciess of the prior art, the purpose of this utility model is to provide a kind of low low residual voltages for holding structure ESD surge protective device, rationally, the unidirectional big rapid protection device for returning SCR structure of realization is real by dual trench process for design The SCR structure protection device for having showed extremely low capacitor, can satisfy current low residual voltage protection demand, and the device have low capacitor, The features such as low clamper and big surge through-current capability.

To achieve the above object, the utility model provides following technical solution:

A kind of low low residual voltage ESD surge protective device for holding structure, it is characterised in that: including being connected by electrical connection Drop hold pipe D1, TVS pipe D4, Schottky tube D2, NPN pipe T1 and positive drop and hold pipe D3；Wherein drop holds pipe D3 offer forward current Access；D1 and T1 constitutes PNPN structure, for main discharge channel；TVS pipe D4 provides cut-in voltage.

As a kind of technical solution of optimization, the TVS pipe successively expands area by N-type substrate, N+ from bottom to top and P+ expands area It constitutes, wherein the cathode of TVS pipe is that N+ expands area, and it is centrally located that N+ expands area；P+ expands the anode that area is used to make TVS pipe.

As a kind of technical solution of optimization, the main discharge channel from bottom to top successively by two areas substrate N+Deep, The area N-Epi, the base area P+ and N+ emitter region are constituted；The two sides in the area N-Epi are arranged in two areas substrate N+Deep；The position of the base area P+ In the top of N+ emitter region, and the yin when the equidistant place in anodes centre position around TVS pipe, which reserves, to allow gate pole to trigger With the cathode short circuit hole of same potential in the short circuit hole of pole.

By adopting the above-described technical solution, compared with prior art, the utility model is designed reasonably, realization it is unidirectional big The rapid protection device for returning SCR structure is realized the SCR structure protection device of extremely low capacitor, can satisfy by dual trench process Current low residual voltage protects demand, and the device has the characteristics that low capacitor, low clamper and big surge through-current capability.

The utility model is described further referring to drawings and examples.

Detailed description of the invention

Fig. 1 is a kind of circuit diagram of embodiment of the utility model；

Fig. 2 is the overall structure diagram after the completion of a kind of embodiment preparation of the utility model.

Specific embodiment

Embodiment

As shown in Figure 1, a kind of low low residual voltage ESD surge protective device for holding structure, including connected by electrical connection Drop hold pipe D1, TVS pipe D4, Schottky tube D2, NPN pipe T1 and positive drop and hold pipe D3；Wherein drop holds pipe D3 offer forward current Access；D1 and T1 constitutes PNPN structure, for main discharge channel；TVS pipe D4 provides cut-in voltage.

The TVS pipe successively expands area by N-type substrate, N+ from bottom to top and P+ expands area and constitutes, and wherein the cathode of TVS pipe is N+ Expand area, it is centrally located that N+ expands area；P+ expands the anode that area is used to make TVS pipe.

The main discharge channel is from bottom to top successively by two areas substrate N+Deep, the area N-Epi, the base area P+ and N+ emitter region It constitutes；The two sides in the area N-Epi are arranged in two areas substrate N+Deep；It is being enclosed in the top of N+ emitter region the position of the base area P+ Reserving around the equidistant place in anodes centre position of TVS pipe has same potential in cathode short circuit hole when gate pole can be allowed to trigger Cathode short circuit hole.

Above-mentioned device is dual trench process device, and groove provides device isolation, groove for connect substrate and N+IOS and The surface area P+.The device is the low container piece of extension type, and N-Epi provides low appearance for device and supports.The device is unidirectional device, can be led to It crosses array original pack arrangement and constitutes two-way, multichannel protection device.

As shown in Fig. 2, the manufacture craft of low residual voltage ESD surge protective device is: passing through on the P+ substrate material that height mixes Implantation annealing mode forms N+ buried layer area；Grown epitaxial layer N-Epi forms the area N+Deep by implantation annealing, then passes through injection Annealing way is respectively formed N+ and expands area and P+ expansion area；Deep etching forms groove, silica is filled in groove, then by wet Method etching process forms mesa trench, and deposited metal forms metal interconnection so that metal and the area substrate N+Deep, the area P+ with And the area N-Epi connection.

The utility model is designed reasonably, the unidirectional big rapid protection device for returning SCR structure of realization, by dual trench process, The SCR structure protection device for realizing extremely low capacitor can satisfy current low residual voltage protection demand, and the device has low electricity The features such as appearance, low clamper and big surge through-current capability.

The protection scope of the utility model is not limited merely to above-described embodiment, skill belonging to the idea of the present invention Art scheme belongs to the protection scope of the utility model.It should be pointed out that for those skilled in the art, Several improvements and modifications under the premise of the utility model principle are not departed from, these improvements and modifications also should be regarded as the utility model Protection scope.

Claims

1. a kind of low low residual voltage ESD surge protective device for holding structure, it is characterised in that: including what is connected by electrical connection Drop holds pipe D1, TVS pipe D4, Schottky tube D2, NPN pipe T1 and positive drop and holds pipe D3；

Wherein drop holds pipe D3 offer forward current access；D1 and T1 constitutes PNPN structure, for main discharge channel；TVS pipe D4 is provided Cut-in voltage.

2. the low low residual voltage ESD surge protective device for holding structure of one kind according to claim 1, it is characterised in that: described TVS pipe successively expands area by N-type substrate, N+ from bottom to top and P+ expands area and constitutes, and wherein the cathode of TVS pipe is that N+ expands area, and N+ expands area It is centrally located；P+ expands the anode that area is used to make TVS pipe.

3. the low low residual voltage ESD surge protective device for holding structure of one kind according to claim 2, it is characterised in that: described Main discharge channel is successively made of two areas substrate N+Deep, the area N-Epi, the base area P+ and N+ emitter region from bottom to top；Two linings The two sides in the area N-Epi are arranged in the bottom area N+Deep；The position of the base area P+ in the top of N+ emitter region, and surround TVS pipe sun The equidistant place in pole center reserves the cathode short circuit hole in cathode short circuit hole when gate pole can be allowed to trigger with same potential.