CN103777462B - 显示装置制造用光掩模和图案转印方法 - Google Patents

显示装置制造用光掩模和图案转印方法 Download PDF

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Publication number
CN103777462B
CN103777462B CN201310512860.9A CN201310512860A CN103777462B CN 103777462 B CN103777462 B CN 103777462B CN 201310512860 A CN201310512860 A CN 201310512860A CN 103777462 B CN103777462 B CN 103777462B
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China
Prior art keywords
pattern
light
photomask
exposure
main
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CN201310512860.9A
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Chinese (zh)
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CN103777462A (zh
Inventor
今敷修久
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
CN201310512860.9A 2012-10-25 2013-10-25 显示装置制造用光掩模和图案转印方法 Active CN103777462B (zh)

Applications Claiming Priority (2)

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JP2012235424 2012-10-25
JP2012-235424 2012-10-25

Publications (2)

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CN103777462A CN103777462A (zh) 2014-05-07
CN103777462B true CN103777462B (zh) 2017-03-01

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CN201310512860.9A Active CN103777462B (zh) 2012-10-25 2013-10-25 显示装置制造用光掩模和图案转印方法

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JP (1) JP5916680B2 (enExample)
KR (2) KR101544274B1 (enExample)
CN (1) CN103777462B (enExample)
TW (1) TWI541588B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI919218B (zh) 2023-03-20 2026-03-21 日商Ｓｋ電子股份有限公司 光罩及光罩的製造方法

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JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
WO2017086590A1 (en) * 2015-11-19 2017-05-26 Rohm And Haas Electronic Materials Korea Ltd. Method for preparing column spacer
KR101755318B1 (ko) 2015-11-19 2017-07-10 롬엔드하스전자재료코리아유한회사 컬럼 스페이서의 제조방법
CN106773524A (zh) * 2017-02-20 2017-05-31 京东方科技集团股份有限公司 掩膜板
JP6808665B2 (ja) * 2017-03-10 2021-01-06 Hoya株式会社 表示装置製造用フォトマスク、及び表示装置の製造方法
CN110770614A (zh) * 2017-05-16 2020-02-07 应用材料公司 使用倍频干涉光刻的线栅偏振器制造方法
US10942575B2 (en) 2017-06-07 2021-03-09 Cisco Technology, Inc. 2D pointing indicator analysis
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
JP6731441B2 (ja) * 2018-05-01 2020-07-29 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP2019012280A (ja) * 2018-09-19 2019-01-24 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6872061B2 (ja) * 2020-05-11 2021-05-19 Hoya株式会社 フォトマスク及び表示装置の製造方法
KR102886549B1 (ko) * 2021-01-21 2025-11-14 삼성디스플레이 주식회사 표시 장치 및 포토 마스크
CN113608406A (zh) * 2021-05-27 2021-11-05 联芯集成电路制造(厦门)有限公司 光掩模结构
CN118103771B (zh) * 2022-09-27 2026-01-23 京东方科技集团股份有限公司 阵列基板及其制作方法、掩膜版、显示装置

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JP2881892B2 (ja) * 1990-01-16 1999-04-12 富士通株式会社 投影露光用マスク
JPH05165194A (ja) * 1991-12-16 1993-06-29 Nec Corp フォトマスク
JP2882233B2 (ja) * 1993-03-29 1999-04-12 凸版印刷株式会社 補助パターン付き位相シフトマスクの製造方法
JP3283624B2 (ja) * 1993-04-12 2002-05-20 株式会社日立製作所 ホトマスク
JP3577363B2 (ja) * 1994-06-29 2004-10-13 株式会社ルネサステクノロジ 半導体装置の製造方法
JPH1092706A (ja) * 1996-09-10 1998-04-10 Sony Corp 露光方法、及び該露光方法を用いた半導体装置の製造方法
JP2002323746A (ja) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd 位相シフトマスク及び、それを用いたホールパターン形成方法
JP2002351046A (ja) * 2001-05-24 2002-12-04 Nec Corp 位相シフトマスクおよびその設計方法
JP4314285B2 (ja) * 2003-02-17 2009-08-12 パナソニック株式会社 フォトマスク
JP2008116862A (ja) 2006-11-08 2008-05-22 Elpida Memory Inc フォトマスク
JP5524447B2 (ja) * 2007-09-25 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル 露光用マスク、パターン形成方法及び露光用マスクの製造方法
JP2009169255A (ja) * 2008-01-18 2009-07-30 Nsk Ltd 露光装置及び基板の製造方法ならびにマスク
JP5106220B2 (ja) * 2008-04-10 2012-12-26 キヤノン株式会社 原版データ生成プログラム、原版データ生成方法、照明条件決定プログラム、照明条件決定方法およびデバイス製造方法
JP2012073326A (ja) * 2010-09-28 2012-04-12 Toppan Printing Co Ltd フォトマスク、フォトマスクブランク及びフォトマスクの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI919218B (zh) 2023-03-20 2026-03-21 日商Ｓｋ電子股份有限公司 光罩及光罩的製造方法

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Publication number Publication date
KR101544274B1 (ko) 2015-08-12
KR101544324B1 (ko) 2015-08-12
KR20140130387A (ko) 2014-11-10
KR20140052890A (ko) 2014-05-07
JP5916680B2 (ja) 2016-05-11
TWI541588B (zh) 2016-07-11
CN103777462A (zh) 2014-05-07
JP2014102496A (ja) 2014-06-05
TW201421148A (zh) 2014-06-01

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