CN103777462B - Display device manufacture photomask and pattern transfer-printing method - Google Patents

Display device manufacture photomask and pattern transfer-printing method Download PDF

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Publication number
CN103777462B
CN103777462B CN201310512860.9A CN201310512860A CN103777462B CN 103777462 B CN103777462 B CN 103777462B CN 201310512860 A CN201310512860 A CN 201310512860A CN 103777462 B CN103777462 B CN 103777462B
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pattern
photomask
light
exposure
master pattern
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CN103777462A (en
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今敷修久
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention provides display device manufacture photomask and pattern transfer-printing method.In the display device manufacture photomask with transfer pattern, described transfer pattern has：Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And auxiliary patterns, its configuration is in the periphery of described master pattern, there is the width that cannot be differentiated by exposure, it is made up of transmittance section, between the exposure light and the exposure light of auxiliary patterns described in transmission of master pattern described in transmission, it is created substantially absent phase contrast to each other, when setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P（μm）When, described spacing P is set to so that the diffraction light producing ± 1 rank due to the interference of light of the exposure light generation of the exposure light of master pattern described in transmission and auxiliary patterns described in transmission incides the optical system of the exposure machine for described exposure.

Description

Display device manufacture photomask and pattern transfer-printing method
Technical field
The present invention relates to being applied to photomask and the pattern transfer-printing method using this photomask of the manufacture of display device.
Background technology
Just like the phase shifting mask of lower band auxiliary patterns described in patent documentation 1, this phase shifting mask with auxiliary patterns has： Transparency carrier；Photomask, it has the master pattern of light transmission and is formed at saturating around this master pattern on this transparency carrier The auxiliary patterns of photosensitiveness；And phase shift layer, it, located at the above-mentioned auxiliary patterns forming part of this photomask, makes by auxiliary patterns Exposure light phase place carry out displacement.Herein below has been recorded in patent documentation 1：When manufacturing semiconductor device, to being formed at Overlay film on semiconductor substrate forms contact hole etc. not to be had in the case of the isolated patterns of repeatability using this phase shifting mask, leads to The exposure light crossed shows steep light intensity distributions.
The halftoning phase with sectional hole patterns, auxiliary patterns, half-tone regions and lightproof area is recorded in patent documentation 2 Move mask.Herein below has been recorded in patent documentation 2：This half-tone phase shift mask is for forming pattern on the semiconductor wafer Exposed mask, can fully obtain the focal depth of isolated patterns by this half-tone phase shift mask.
Prior art literature
Patent documentation 1：Japanese Unexamined Patent Publication 6-282064 publication
Patent documentation 2：Japanese Unexamined Patent Publication 2009-80143 publication
Content of the invention
Problems to be solved by the invention
In the belonging field of semiconductor device manufacture photomask of invention described in patent documentation 1 and 2, in order to Obtain resolution and with high NA（Numerical Aperture：Numerical aperture）（Such as more than 0.2）Optical system together, open Send out the phase shifting mask using phase shift effect.Phase shifting mask is single wavelength, and the light source shorter with wavelength（KrF's or ArF Excimer laser etc.）It is used together.Thereby, it is possible to tackle the granular of high integration and the pattern being accompanied by this.
On the other hand, in the field of lithography of display device manufacture, method as described above is not typically applied to improve Resolution and increase focal depth.Following reason can be enumerated：The integrated level of the pattern in display device and trickle degree are not partly led It is so high that body manufactures field.
In fact, the exposure machine of display device manufacture { generally known has LCD（Liquid Crystal Display：Liquid Crystal display）Exposure device or liquid crystal exposure apparatus etc. } in the optical system carried and light source also with semiconductor device system The exposure machine made differs widely, and compared to resolution and focal depth, more payes attention to production efficiency（For example, expand light source Wave-length coverage and increase light quantity, shorten the production cycle（takt）（production cycle time：Time production cycle）Deng）.
Additionally, using liquid crystal, organic EL manufacturing（Electro-Luminescence：Electroluminescent）Deng display device When, multiple conducting films of required pattern formation are implemented by stacking and dielectric film forms the elements such as transistor.At these Following operation is mostly utilized in lit-par-lit structure：Suitably repeat film forming and pattern is formed, using photomask to being laminated Each film application photo-mask process is formed carrying out pattern.
For example, the thin film transistor (TFT) used in the liquid crystal indicator for active matrix mode（Thin Film Transistor, is simply denoted as " TFT " below）For, some have following structure：In the multiple patterns constituting TFT, formed In passivation layer（Insulating barrier）Contact hole run through insulating barrier, with positioned at its lower layer side connecting portion conducting.Now, without making Upper layer side is positioned exactly with the pattern of lower layer side, and is not reliably formed the shape of contact hole, then cannot ensure to show The correct operation of device.
As the nearest trend of such display device, with enough speed of action, bright and fine image are carried out Show and make the demand that consumption electric power reduces increasingly to increase.In order to meet such requirement it is desirable to the structural portion of display device Part and element increasingly granular and highly integrated.It is accompanied by this, the transfer that photomask has used in these manufactures With the design of pattern also increasingly granular.
When the transfer increasing fineness of pattern of photomask, it is transferred to exactly transfer printing body（It is etched processing Thin film etc.）Operation become difficult.In transfer printing process, the limit of resolution of the exposure machine that reality is used is set as 3 μm of left sides The right side, but, in the transfer pattern required in display device, need CD（Critical Dimension：Critical dimension）（Line Wide）The transfer pattern of the size already close to this limit or less than this limit.
For example consider following situation：Using the photomask with the sectional hole patterns of application in contact hole etc., by this sectional hole patterns It is transferred on transfer printing body.In the past, if the sectional hole patterns more than 3 μm for the diameter, then can less difficulty be transferred.So And, if less than 3 μm of sectional hole patterns will be transferred, be capable of interior on transfer printing body being equably reliably formed hole High-precision transfer is not easy to.Still more to be formed have less than 2.5 μm diameters hole even more extremely difficult.
Its main reason is affected by the restriction in the performance of exposure machine used in transfer.Existing most of LCD expose Ray machine uses to have and comprises i line, h line, the wave band of g line（Below also referred to as wide wavelength）Exposure light, as described above, the limit of resolution It is 3 μm about.In this condition, for example, in the transfer pattern of photomask, a diameter of less than 2.5 μm to be formed, Jin Erzhi Footpath is less than 2.0 μm of sectional hole patterns, certainly difficult.But it is considered to it is somebody's turn to do also it is desirable to transferring and having to be less than in the near future The sectional hole patterns of less than 1.5 μm diameters of diameter.
Additionally, by so far for the purpose of semiconductor device manufacture exploitation be used for that to put forward high-resolution method direct It is applied to display device manufacture and there are some problems, the actuality at least carrying out this application in the near future is little.For example, to There is the such high NA of semiconductor device manufacture（Numerical aperture）The conversion of exposure machine need huge investment, with display Produce inconsistent in the conformability of the price of device.Or, with regard to the change of exposure wavelength（Accurate using ArF in single wavelength Short wavelength as molecular laser）, it is very difficult to the application of the display device with larger area, and easily extend Manufacture the production cycle, except these problems in the past, be also inappropriate needing sizable investment this respect.
Therefore, present inventor is not dependent only upon the performance of exposure machine, and the transfer to photomask is studied with pattern, Thus investigated the pattern being even less than 3 μm it is also possible to high accuracy and the reliably method that transferred.
Research according to inventors it is considered to following aspect as the pattern that can not reliably transfer fine diameter because One of element.
In general, the transfer pattern plane of photomask base plate is not preferable plane, additionally, transfer printing body is not reason The plane thought.And, there is the focus errors composition of the optical system of exposure machine, therefore might not be just under focusing state Transferred.The area of the photomask of display device manufacture is varied, typically than the photomask of semiconductor device manufacture Area big（For example, square for more than 300mm）.And, transfer printing body（Display floater production glass etc.）Have Bigger area（For example, square for more than 1000mm）, so even depositing on the surface of photomask and transfer printing body Concavo-convex, it is highly important for defocusing the impact to transferability less.I.e. it is desirable to exposure when focusing allowance（focus margin）（Margin for focus error）Larger photomask.
The present invention completes to solve such problem.
Means for solving the problem
In order to solve above-mentioned problem, the present invention has following structure.The present invention is to be characterized with structures below 1～6 Display device manufacture photomask, and the pattern transfer-printing method being characterized with structures below 7.
（Structure 1）
The structure 1 of the present invention is display device manufacture photomask, and it has by formation on the transparent substrate extremely Few photomask carries out pattern formation and forms, comprises the transfer pattern of light shielding part and transmittance section, and this display device manufacture is used Photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by transmittance section Or semi light transmitting part is constituted,
Phase contrast between the exposure light of the exposure light of master pattern described in transmission and auxiliary patterns described in transmission is more than 0 degree Less than 90 degree,
When setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P, its Described in spacing P unit be μm,
Described spacing P is configured to exposure light and auxiliary patterns described in transmission so that due to master pattern described in transmission The diffraction light exposing the interference of light between light and producing ± 1 rank incides the optical system of the exposure machine for described exposure System.
（Structure 2）
The structure 2 of the present invention is display device manufacture photomask, and it has by the screening being formed on the transparent substrate Light film carries out pattern formation and forms, comprises the transfer pattern of light shielding part and transmittance section, and this display device manufacture is used up and covered Mould is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width that cannot differentiate by exposure, by printing opacity Portion is constituted,
It is created substantially absent to each other with the exposure light of auxiliary patterns described in transmission in the exposure light of master pattern described in transmission Phase contrast,
When setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P, its Described in spacing P unit be μm,
Described spacing P is configured to exposure light and auxiliary patterns described in transmission so that due to master pattern described in transmission The diffraction light exposing the interference of light between light and producing ± 1 rank incides the optical system of the exposure machine for described exposure System.
（Structure 3）
The structure 3 of the present invention is it is characterised in that when using in display device manufacture photomask described in structure 2 It is B in the limit of resolution of the exposure machine of described exposure, during a diameter of C of described master pattern, the width A of described auxiliary patterns meets A≤B/2 and A≤C/2, the unit of wherein said A, B, C is μm.
（Structure 4）
The structure 4 of the present invention is display device manufacture photomask, its have by formed on the transparent substrate half Light-transmissive film and photomask carry out pattern formation and form, comprise the transfer pattern of light shielding part, transmittance section and semi light transmitting part, should Display device manufacture photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by semi-transparent Portion is constituted,
Master pattern described in transmission exposure light and auxiliary patterns described in transmission exposure light between phase contrast be 90 degree with Under,
When setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P, its Described in spacing P unit be μm,
Described spacing P is configured to exposure light and auxiliary patterns described in transmission so that due to master pattern described in transmission The diffraction light exposing the interference of light between light and producing ± 1 rank incides the optical system of the exposure machine for described exposure System.
（Structure 5）
The structure 5 of the present invention is it is characterised in that when using in display device manufacture photomask described in structure 4 It is B in the limit of resolution of the exposure machine of described exposure, during a diameter of C of described master pattern, the width A of described auxiliary patterns meets A≤B and A≤C, the unit of wherein said A, B, C is μm.
（Structure 6）
The structure 6 of the present invention is the display device manufacture photomask described in any one structure in structure 1～5 In it is characterised in that described spacing P is configured to so that due to assisting described in exposure light and the transmission of master pattern described in transmission Interference of light between the exposure light of pattern and the diffraction light that produces ± 2 ranks is not incident on the exposure machine for described exposure Optical system.
（Structure 7）
The structure 7 of the present invention is the display device manufacture photomask described in any one structure in structure 1～5 In it is characterised in that described auxiliary patterns surround described master pattern and formed.
（Structure 8）
The structure 8 of the present invention is the display device manufacture photomask described in any one structure in structure 1～5 In it is characterised in that when described exposure machine the limit of resolution be B（μm）When, the scope of described spacing P is 0.7B≤P≤1.3B.
（Structure 9）
The structure 9 of the present invention is display device manufacture photomask, and it has by formation on the transparent substrate extremely Few photomask carries out pattern formation and forms, comprises the transfer pattern of light shielding part and transmittance section, and this display device manufacture is used Photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by transmittance section Or semi light transmitting part is constituted,
Phase contrast between the exposure light of the exposure light of master pattern described in transmission and auxiliary patterns described in transmission is more than 0 degree Less than 90 degree,
If the distance between center of width of the center of described master pattern and described auxiliary patterns is spacing P,
The light intensity distributions curve of the light intensity distributions being formed on transfer printing body in the transmitted light of the described master pattern of expression In, if the distance of main peak and the minimal point between the 1st nearest submaximum of described main peak to main peak center is Q, if away from From the minimal point between the 2nd near submaximum of described main peak the 2nd and described 1st submaximum be R to a distance from main peak center when, full Sufficient Q≤P≤R, the unit of wherein said P, Q, R is μm.
（Structure 10）
The structure 10 of the present invention is that in the display device manufacture photomask described in structure 9, it has by shape Photomask on the transparent substrate is become to carry out pattern formation and form, comprise the transfer pattern of light shielding part and transmittance section, should Display device manufacture photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has less than the diameter of master pattern and cannot pass through exposure Come the width to differentiate, it is made up of transmittance section,
It is created substantially absent to each other with the exposure light of auxiliary patterns described in transmission in the exposure light of master pattern described in transmission Phase contrast.
（Structure 11）
The structure 11 of the present invention is in the display device manufacture photomask recorded in the architecture 10 ＆ apos it is characterised in that working as The limit of resolution for the exposure machine of described exposure is B, and during a diameter of C of described master pattern, the width A of described auxiliary patterns is full Sufficient A≤B/2 and A≤C/2, the unit of wherein said A, B, C is μm.
（Structure 12）
The structure 12 of the present invention is that in the display device manufacture photomask described in structure 9, it has by shape Become semi-transparent film on the transparent substrate and photomask carries out pattern formation and formed, comprises light shielding part, transmittance section and semi-transparent The transfer pattern in light portion, this display device manufacture photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by semi-transparent Portion is constituted.
（Structure 13）
The structure 13 of the present invention is in display device manufacture photomask described in structure 12 it is characterised in that working as The limit of resolution for the exposure machine of described exposure is B, and during a diameter of C of described master pattern, the width A of described auxiliary patterns is full Sufficient A≤B and A≤C, the unit of wherein said A, B, C is μm.
（Structure 14）
The structure 14 of the present invention is that display device manufacture described in any one structure in structure 9～13 is used up and covered In mould it is characterised in that
When setting the width of described auxiliary patterns as A（μm）When, meet Q≤P ±（A/2）≤R.
（Structure 15）
The structure 15 of the present invention is that display device manufacture described in any one structure in structure 9～13 is used up and covered In mould it is characterised in that
Described auxiliary patterns surround described master pattern and are formed.
（Structure 16）
The structure 16 of the present invention is pattern transfer-printing method it is characterised in that this pattern transfer-printing method uses structure 1～5,9 The display device manufacture photomask described in any one structure in～13, by display device manufacture exposure machine in quilt Pattern transfer is carried out on transfer article.
The effect of invention
According to the photomask of the present invention, carried out with pattern turning in transfer photomask being had in order to manufacture display device During print, can be to increase focusing enough and to spare amount（Margin with respect to focusing skew）Condition transferred.Therefore, it is possible to not Focusing state by photomask, the flatness of transfer printing body or exposure optical system is affected, and stably transfers expectation chi Very little pattern.
Brief description
Fig. 1 is a mode of the 1st photomask of the present invention,（a）It is the schematic diagram of the top view illustrating transfer pattern, （b）It is the schematic diagram in the section illustrating transfer pattern.
Fig. 2 is a mode of the 2nd photomask of the present invention,（a）It is the schematic diagram of the top view illustrating transfer pattern, （b）It is the schematic diagram in the section illustrating transfer pattern.
Fig. 3 be illustrate the ability to the present invention the 1st, in the 2nd photomask the master pattern of application and auxiliary patterns shape The schematic diagram of multiple examples.
Fig. 4 is the schematic diagram of the mode of the manufacture method of the 2nd photomask illustrating the present invention with process sequence.
Fig. 5 is the figure of the optical simulation result illustrating the 1st photomask with regard to the present invention, is respectively directed to（a）Abundant with focusing The relevant evaluation of amount,（b）The evaluation relevant with light exposure allowance,（c）Be used for reaching target live width（CD）Required benchmark exposes The relevant evaluation of light quantity Eop, illustrates（d）Embodiment 1,（e）Reference example 1,（f）The result of comparative example 1.
Fig. 6 is the figure of the optical simulation result illustrating the 2nd photomask with regard to the present invention, is respectively directed to（a）Abundant with focusing The relevant evaluation of amount,（b）The evaluation relevant with light exposure allowance,（c）Be used for reaching target live width（CD）Required benchmark exposes The relevant evaluation of light quantity Eop, illustrates（d）Embodiment 2, Fig. 5（e）Reference example 1, Fig. 5（f）Comparative example 1 result.
When Fig. 7 is 1 photomask being shown in using the present invention, with regard to the Resist patterns shape being formed on transfer printing body Shape（Cross sectional shape）Optical simulation result figure.
When Fig. 8 is 2 photomask being shown in using the present invention, with regard to the Resist patterns shape being formed on transfer printing body Shape（Cross sectional shape）Optical simulation result figure.
Fig. 9 is the exposure light that formed on transfer printing body of light of the master pattern illustrating the transmission present invention the 1st or the 2nd photomask The schematic diagram of the expression light intensity distributions curve of intensity distributions.
Figure 10 is the figure of the light intensity distributions curve of the sectional hole patterns being shown specifically embodiments of the invention 3.
Figure 11 is the figure of the light intensity distributions curve of the sectional hole patterns being shown specifically embodiments of the invention 4.
Specific embodiment
The photomask of the present invention, as the photomask of display device manufacture, using existing exposure machine, and can turn Print in the past can not transferability fine pattern, specifically, for exposure when focus offset margin（Enough and to spare amount）Larger.
The photomask of the structure 1 of the present invention has by carrying out pattern shape at least photomask being formed on the transparent substrate Become and formed, comprise light shielding part and the transfer pattern of transmittance section, this display device manufacture photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by transmittance section Or semi light transmitting part is constituted,
Phase contrast between the exposure light of the exposure light of master pattern described in transmission and auxiliary patterns described in transmission is more than 0 degree Less than 90 degree,
When setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P, its Described in spacing P unit be μm,
Described spacing P is configured to exposure light and auxiliary patterns described in transmission so that due to master pattern described in transmission The diffraction light exposing the interference of light between light and producing ± 1 rank incides the optical system of the exposure machine for described exposure System.
That is, photomask or photomask and other film can be formed on the transparent substrate.As other films, Ke Yishi Make the semi-transparent film of a transmission of exposure light.Certainly, it is also possible to deposit in the range of the effect of the following present invention of without prejudice to In other films.
Furthermore it is preferred that the part that transmittance section is transparency carrier exposes.According to above-mentioned membrane structure, auxiliary patterns can be printing opacity Portion or semi light transmitting part.
Specifically, the 1st photomask of the present invention has by carrying out pattern to the photomask being formed on the transparent substrate Formed and formed, comprise light shielding part and the transfer pattern of transmittance section, this display device manufacture photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width that cannot differentiate by exposure, by printing opacity Portion is constituted,
In transmission, the exposure light of the exposure light of the described master pattern described auxiliary patterns with transmission is not to each other substantially There is phase contrast,
When setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P, its Described in spacing P unit be μm,
Described spacing P is configured to exposure light and auxiliary patterns described in transmission so that due to master pattern described in transmission The diffraction light exposing the interference of light between light and producing ± 1 rank incides the optical system of the exposure machine for described exposure System.
Here, master pattern and auxiliary patterns are constituted by transmittance section.Therefore, it is possible to master pattern and auxiliary patterns are all set to Make the part that transparency carrier surface is exposed, both are created substantially absent phase contrast to each other.
But, even if being provided with the film with some functions in any one in master pattern, auxiliary patterns Under, both phase contrasts substantially also do not exist.Phase contrast is created substantially absent and refers to phase contrast below 30 degree.
1st photomask can be using the structure illustrating in such as Fig. 1.
In FIG, the 1st photomask is by carrying out pattern and being formed carrying out shape to forming photomask 20 on the transparent substrate 10 Become master pattern 31, auxiliary patterns 32.Master pattern 31, auxiliary patterns 32 play a role as transmittance section, remaining shading Film 20 plays a role as light shielding part.
The present invention is useful as following photomask, and this photomask is used for making a diameter of less than 4 μm of sectional hole patterns It is formed on transfer printing body for master pattern.Present invention is particularly beneficial for by the limit of resolution of a diameter of used exposure machine with Under, specifically a diameter of less than 3 μm of master pattern be formed on transfer printing body.And then, by a diameter of less than 2.5 μm or 2.0 μ In the case that the master pattern of below m is formed on transfer printing body, The effect of invention is more significantly.Wherein, the diameter of master pattern is excellent Choosing is more than 1 μm.
Therefore, the transfer pattern that photomask has also has the master pattern of fine diameter as described above.That is, master pattern Diameter be less than 4 μm, preferably less than 3 μm, more preferably less than 2.5 μm, be further preferred that less than 2.0 μm.Wherein, main Preferably more than 1 μm of the diameter of pattern.
According to the present invention it is also possible to the transfer that diameter is had with photomask is formed to the photoresist film on transfer printing body The different master pattern of the diameter of the master pattern being had with pattern.For instance, it is possible on the photoresist film on transfer printing body Form the master pattern of the little diameter of diameter of the master pattern with the transfer pattern having than photomask.
In addition, in the photomask shown in Fig. 1, master pattern is square.But, the shape not limited to this of master pattern, can To be circle or polygon, e.g. positive 2n side shape（N is more than 2 integer）（With reference to Fig. 3）.Here, the diameter of master pattern refers to, When master pattern is circle, its diameter is set to the diameter of master pattern, when master pattern is square, its length is set to The diameter of master pattern, when master pattern is for other polygons, the diameter of inscribed circle is set to the diameter of master pattern.
Auxiliary patterns are configured in the periphery of master pattern.Preferably, auxiliary patterns are to surround the surrounding of master pattern and shape Become.The preferable shape of auxiliary patterns is explained below.
On the other hand, the width of auxiliary patterns is width that is less than the diameter of master pattern and cannot being differentiated by exposure machine. Therefore, preferably less than 3 μm of the width of auxiliary patterns.Additionally, preferably more than 0.5 μm of the width of auxiliary patterns.Auxiliary patterns Width really usual practice as can be carried out as follows.
First it is preferred that the limit of resolution working as the exposure machine being used for described exposure is B（μm）, described master pattern straight Footpath is C（μm）When, the width A of auxiliary patterns（μm）Meet A≤B/2 and A≤C/2.
Specifically, in the diameter C of master pattern（μm）Limit of resolution B for exposure machine（μm）The situation of above size Under, the width A of auxiliary patterns（μm）It is preferably the limit of resolution B of exposure machine（μm）Less than 1/2.The width A of auxiliary patterns（μ m）It is more preferably the limit of resolution B of exposure machine（μm）Less than 1/3, more preferably B/5≤A≤B/3.
On the other hand, in the diameter C of master pattern（μm）It is the limit of resolution B less than exposure machine（μm）Size situation Under, the width A of auxiliary patterns（μm）It is preferably master pattern diameter C（μm）Less than 1/2.The width A of auxiliary patterns（μm）More excellent Elect the diameter C of master pattern as（μm）Less than 1/3, more preferably C/5≤A≤C/3.
When the width of auxiliary patterns is excessive, there is the risk differentiated and be transferred on transfer printing body, easily draw Play resist loss described later（resist loss）.Additionally, when the width of auxiliary patterns is too small, effect described later is insufficient, And it is difficult to obtain dimensional accuracy.
The width A of auxiliary patterns（μm）Preferably more than 0.5 μm.This is because, the description when photomask manufactures and light Cause the development of resist（Hereinafter photoresist is referred to as resist）, have it is not easy to be formed uniformly in etching process Live width less than 0.5 μm（CD）Pattern.
As the example of specific parameter, a diameter of 2 μm～4 μm of isolated hole is being formed on transfer printing body In the case of, can be by the diameter C of the master pattern of transfer pattern（μm）It is set to 2 μm～4 μm, the width of auxiliary patterns is set to 0.5 μ The scope of m～1.5 μm, spacing P is set to 3 μm～5 μm of scope.The exposure machine now using is the exposure machine of LCD.Therefore, The width of auxiliary patterns becomes the size of below the limit of resolution of exposure machine.Spacing P is explained below.
Exposure below machine can be enumerated as the exposure using when the photomask using the present invention is come transfer pattern Machine.That is, this exposure machine is to use as display device manufacture（LCD uses or FPD（Flat Panel Display：Flat faced display） With etc.）And the exposure machine of the equimultiple exposure using, there is following structure：The numerical aperture of optical system（NA）For 0.08～ 0.10, coherence factor（coherence factor）（σ）For 0.7～0.9, have and comprise i line, h line, g line in exposure light Light source（Also referred to as wide wavelength light source）.Particularly when optical system numerical aperture NA be 0.08～0.09 or 0.08～ When 0.095, The effect of invention is notable.
Additionally, the photomask of the present invention is due to effectively utilizing the diffraction light producing by auxiliary patterns, therefore relevant When the factor is larger（For example, 0.85～0.9）Effect is particularly significant.
But, also can be using any one single wavelength in i line, h line, g line in the exposure of the photomask of the present invention.Separately Outward, even if the present invention has great meaning in the sectional hole patterns this respect that also can reliably transfer fine diameter using wide wavelength light source Justice.Thus, even if the area of transfer printing body is larger（For example, square etc. for more than 300mm）It is also possible to not reduce life It is exposed in the case of producing efficiency.
The light source form of the exposure machine applied particularly does not restrict.For example, by applying the photograph of light source outgoing The deformation illumination for the purpose of the vertical component cut-off for photomask in Mingguang City（Comprise the oblique incidence illumination of annular illumination）, energy Access good transferability.But, in the present invention, even do not limit the general shape of specific emergent light composition（Non- Deformation）Illumination（Mercury lamp etc.）It is also possible to obtain The effect of invention, this point is significant.
The limit of resolution of exposure machine refers to, it is predetermined that the specification of the optical system being had according to exposure machine and comprising is used The conditions of exposure of light source, the discernmible minimum width of this exposure machine.One of product specification as each exposure machine, mostly It is disclosed in the case of number.For example it is however generally that, as display device manufacture use（LCD uses or FPD uses etc.）Exposure machine In, it is 3 μm about using the limit of resolution comprising when i line, h line, the exposure light source of g line.
The 1st photomask shown in Fig. 1 is to carry out pattern shape by photo-mask process to the photomask being formed on the transparent substrate Become and formed.It is configured with foursquare sectional hole patterns in centre as master pattern.The part of master pattern is formed as transparency carrier The transmittance section exposed.Additionally, the periphery in this master pattern is provided with the auxiliary patterns of thin width, this auxiliary patterns is configured to surround Master pattern.Auxiliary patterns are again formed as the transmittance section that transparency carrier exposes.Therefore, the exposure light of transmission master pattern and auxiliary patterns There is not phase contrast to each other.
If the distance between center of width of the center of master pattern and auxiliary patterns is spacing P（μm）.This spacing P is as follows Design.
That is, described spacing P is set as so that this photomask being arranged on above-mentioned exposure machine and being exposed When, ± 1 rank is produced by the interference of light of the exposure light generation of the exposure light of transmission master pattern and auxiliary patterns described in transmission Diffraction light incide the optical system of the exposure machine for described exposure.
The diffraction light incidence of ± 1 rank refers to ,+1 rank and -1 rank both sides are incident.Spacing P can also be set as so that The diffraction light bigger than ± 1 rank exponent number（Such as ± 2 rank diffraction lights）Incide the optical system of exposure machine.But, the diffraction of ± 1 rank Light is for making the effect increasing focusing enough and to spare amount described later preferably it is preferred that substantially ± 2 ranks or exponent number are bigger than ± 2 ranks Diffraction light not incident under conditions of be designed.I.e. preferably ± 1 rank diffraction light incides the optical system of exposure machine, and makes This ± 1 rank diffraction of light angle is fully big, and significantly utilizes the design of its interference effect.In the incident situation of ± 2 rank diffraction lights Under, master pattern and auxiliary patterns over-separation, there is the trend that the dynamics of interference dies down.
Alternatively, it is also possible to be the optical system that zeroth order light incides exposure machine.But, due to the increasing for focusing enough and to spare amount Greatly（With respect to the variation of focus face, as deterioration less）Effect play a role be more than ± 1 rank light diffraction light, because It is preferred that this is for this diffraction light, in the case of there is the zeroth order light inciding optical system, the intensity of this zeroth order light Less with respect to ± 1 rank diffraction light.
And it is preferred that spacing P is determined according to following condition.That is, the transmitted light of master pattern is being shown in transfer printing body In the light intensity distributions curve of the light intensity distributions of upper formation, when setting main peak and between the 1st nearest submaximum of described main peak Minimal point to main peak center distance be Q（μm）If, apart from the 2nd near submaximum of described main peak the 2nd and described 1st submaximum Between minimal point to main peak center distance be R（μm）When, it is preferably set to Q≤P≤R.
Fig. 9 is that the light intensity distributions of the light intensity distributions illustrating that the exposure light of transmission master pattern is formed on transfer printing body are bent Line.Here, using central highest peak as main peak, it is located at the submaximum that its both sides is symmetrically generated near main peak side successively For the 1st submaximum, the 2nd submaximum ....
If the distance of the minimal point between main peak and the 1st submaximum to main peak center is Q（μm）If, the 2nd submaximum and the 1st The distance of the minimal point between submaximum to main peak center is R（μm）.Now, spacing P（μm）Preferably meet following formula.
Q≤P≤R…（1）
That is, the center of auxiliary patterns is located at any one position with the curves overlapped of the chevron forming the 1st submaximum. Additionally, it is further preferred that the part that the width of auxiliary patterns can be made to be integrally located at and form the curve of chevron of the 1st submaximum Overlapping position.That is, meet following formula.
Q≤P±（A/2）≤R…（2）
A（μm）It is the width of auxiliary patterns.
Moreover it is preferred that when the limit of resolution of described exposure machine is B（μm）When, the scope of spacing P be 0.7B≤P≤ 1.3B.It is further preferred that the scope of spacing P is 0.8B≤P≤1.2B.Additionally, considering from processability this respect, preferably in master map There is more than 0.5 μm of light shielding part between case and sectional hole patterns.
The 1st photomask shown in Fig. 1 is formed as：Photomask is formed on the transparency carriers such as quartz and to photomask Carry out pattern to be formed, form the transfer pattern comprising light shielding part and transmittance section.Manufacture method can apply known binary mask Manufacture method.
Here, except photomask is substantially to carry out shading to exposure light（Optical density (OD) OD is more than 3）Film feelings Beyond condition, photomask can also be exposure light absorbance be less than 20% film.As photomask, preferably there is OD3 The photomask of above light-proofness.In addition, in the case that photomask is to an exposure light transmission part, this photomask is had The phase-shift phase of exposure light is set to less than 90 degree, is more preferably set to less than 60 degree.
The material of photomask is except using Cr or Cr compound（The oxide of Cr, nitride, carbide, nitrogen oxidation Thing or carbon oxynitride etc.）In addition, Ta, Mo, W or their compound can also be used（Comprise above-mentioned metal silicide）Deng.
Here, expose the exposure light of the exposure machine just carrying out using during pattern transfer in the photomask using the present invention. Specifically, exposure light preferably comprise including i line, h line, g line wave band.Thus, even if the area of transfer printing body is larger（Example As square etc. for more than 300mm）It is also possible to be exposed in the case of not reducing production efficiency.In addition, as above Described it is also possible to i line, h line, any one in g line be used alone as exposure light.
The exposure light transmission of photomask is that the formation that the exposure light transmission of transparency carrier is set to when 100% has shading The absorbance of the transparency carrier of film, may be defined as the absorbance for the representative wavelength of light used in exposure.Above-mentioned exposure light Representative wavelength can be upper i line, h line, any one in g line, for example can be set to g line.
The phase-shift phase of photomask refers to the light of transmission transparency carrier and transmission is formed with the transparency carrier of above-mentioned photomask Light phase contrast each other.If represented with radian, phase-shift phase refers to for " less than 90 degree ", above-mentioned phase contrast be "（2n-1/ 2）π～（2n+1/2）π（N is integer）”.As described above, may be calculated for the representative wavelength included in exposure light Phase-shift phase.
The 1st light that the present invention can be manufactured using the photomask blank being made up of the transparency carrier being formed with photomask is covered Mould.That is, the 1st photomask can be set to be covered by the light that the transparency carrier with the predetermined photomask being formed pattern is constituted Mould.Therefore, in the transfer pattern that this photomask has, the region beyond master pattern and auxiliary patterns is made up of light shielding part. 1st photomask of the present invention does not need the phase shift film with so-called phasing back effect（Phase shift quality entity for exposure light The upper film for 180 degree）, and it is capable of the increase of focusing enough and to spare amount when transferring.
1st photomask of the present invention is for display device manufacture with being useful.Specifically, it is for manufacturing LCD（Liquid Brilliant display）Device, organic EL display, PDP（Plasmia indicating panel）Deng photomask.
In the transfer pattern of such purposes, in most cases need isolated sectional hole patterns.1st light of the present invention When master pattern in mask is isolated sectional hole patterns, The effect of invention is notable.Isolated pattern refers to, the pattern with same shape It is regularly arranged and is in the transfer pattern of the state that transmitted light each other interferes（Also referred to as intensive pattern）Difference, The pattern of the arrangement of pattern of same shape as not all right one-tenth.
The shape of the auxiliary patterns shown in Fig. 1 is 8 side shape bandings, but the invention is not restricted to this.The shape of auxiliary patterns is excellent Choosing is in the periphery of the sectional hole patterns as master pattern, and surrounds the shape of the surrounding of sectional hole patterns.Specifically it is preferred that The shape for the center with regard to sectional hole patterns being in the target rotation of more than 3 sub-symmetry gives shape obtained from one fixed width.Fig. 3 In exemplified with preferred master pattern and auxiliary patterns shape.The design of master pattern and the design of auxiliary patterns can also groups each other Close Fig. 3's（a）~（f）In different patterns.
For example, the periphery of auxiliary patterns be square, positive 6 when shape, positive 8 shape, positive 10 in the positive 2n such as shape shape（N be 2 with On integer）Or the situation of circle is preferred mode.Further it is preferred that the periphery of auxiliary patterns and inner circumferential are substantially to put down Shape during row, i.e. there is the polygon of substantially stationary width or shape as the banding of circle.Also this shape is referred to as many Side shape banding or Circular band.
Auxiliary patterns can also be in the periphery of sectional hole patterns and surround the most pattern of the surrounding of sectional hole patterns.Example If the shape of auxiliary patterns can also be the shape of the part disappearance of above-mentioned polygon banding or Circular band.Such as Fig. 3's （f）Shown, the shape of auxiliary patterns can also be the shape of the corner disappearance of tetragon banding.
In addition, according to the research of present inventor, in the shape illustrated in Fig. 3, forming precision from being conducive to pattern（CD Deng）Aspect, preferably（b）、（f）,（b）、（f）In,（b）Effect is improved for focusing enough and to spare amount favourable.
Then, the 2nd photomask of the present invention is illustrated.2nd photomask of the present invention has following characteristics.
That is, the 2nd photomask of the present invention has by carrying out to the semi-transparent film being formed on the transparent substrate and photomask That pattern forms and is formed, comprise light shielding part, the transfer pattern of transmittance section and semi light transmitting part, this display device manufacture uses up and covers Mould is characterised by, described transfer pattern has：Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And auxiliary Pattern, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, is made up of semi light transmitting part, transmission Phase contrast between the exposure light of the exposure light of described master pattern and auxiliary patterns described in transmission is less than 90 degree, when setting described master The distance between center of width of the center of pattern and described auxiliary patterns is spacing P（μm）When, described spacing P is set Become, produced due to the interference of light of the exposure light generation of the exposure light of master pattern described in transmission and auxiliary patterns described in transmission The diffraction light of ± 1 rank incides the optical system of the exposure machine for described exposure.
2nd photomask can be using the structure for example shown in Fig. 2.
2nd photomask is different in the following areas with respect to the 1st photomask illustrated in fig. 1.That is, in the 1st photomask, auxiliary Pattern 32 is helped to be formed as the transmittance section that transparency carrier 10 exposes, on the other hand, in the 2nd photomask, auxiliary patterns 32 ' are formed as Partly transmission exposes the semi light transmitting part of light.This semi light transmitting part forms semi-transparent film 40 on the transparent substrate 10 and forms.
Here, the exposure light transmission of the auxiliary patterns being made up of semi light transmitting part and the auxiliary patterns being made up of transmittance section Exposure light transmission is compared, and close to the exposure light transmission of the light shielding part surrounding auxiliary patterns, is therefore difficult on transfer printing body It is resolved.Therefore, compared to the 1st photomask, the design freedom of the width of auxiliary patterns is bigger for the 2nd photomask.That is, difference Place is, compared to the auxiliary patterns in the 1st photomask, can increase the width of auxiliary patterns.In view of high CD precision ground Form pattern during trickle auxiliary patterns and form difficulty, this is significant.That is, the auxiliary patterns in the 2nd photomask Width not have to be in the limit of resolution as so-called exposure machine below disclosed numerical value.
The width of the auxiliary patterns of the 2nd photomask can determine as follows.
First it is preferred that the limit of resolution working as the exposure machine being used for described exposure is B（μm）, described master pattern straight Footpath is C（μm）When, the width A of auxiliary patterns（μm）Meet A≤B and A≤C.
Specifically, in the diameter C of master pattern（μm）Limit of resolution B for exposure machine（μm）The situation of above size Under, the width A of auxiliary patterns（μm）It is preferably the limit of resolution B of exposure machine（μm）Below.The width A of auxiliary patterns（μm）More excellent Elect the limit of resolution B of exposure machine as（μm）Less than 1/2, more preferably B/5≤A≤B/2.
On the other hand, in a diameter of limit of resolution B less than exposure machine of master pattern（μm）Size in the case of, auxiliary The width A of pattern（μm）It is preferably this master pattern diameter C（μm）Below.The width A of auxiliary patterns（μm）More preferably master pattern Diameter C（μm）Less than 1/2, more preferably C/5≤A≤C/2.This auxiliary patterns width A（μm）Be preferably 0.5 μm with On.
Also there is semi light transmitting part due in the 2nd photomask in addition to transmittance section, light shielding part, therefore its autofrettage ratio the 1st Photomask is slightly complicated.The manufacture process of the 2nd photomask shown in Fig. 4.
That is, prepare photomask blank, this photomask blank is to sequentially form semi-transparent film 40 on the transparent substrate 10 and hide Light film 20, and then be formed with obtained from resist film 50（Fig. 4's（a））.Then, to resist film 50（1st resist） Implement the 1st description.It is developed, the formed the 1st Resist patterns to be etched photomask 20 as mask, thus draws Determine light shielding part（Fig. 4's（b））.
Peeling off the 1st Resist patterns（Fig. 4's（c））Afterwards, coating forms resist film 60 from the teeth outwards again（2nd resists Erosion agent film）（Fig. 4's（d））, carry out the 2nd description for forming the 2nd Resist patterns.This is using for etching semi-transparent film 40 And form the description data of transmittance section to carry out.Now, above-mentioned description data is processed as follows：Around master pattern, make The edge of the 2nd Resist patterns somewhat retreats, so that the edge of photomask 20 exposes.Then, after development, will be formed As mask, double light-transmissive film 40 is etched at the edge of the 2nd Resist patterns and light shielding part（Fig. 4's（e））, form printing opacity Portion.Thus, the transmittance section being formed, with respect to the position of the light shielding part delimited before, is self-aligned on correct position （self alignment）.Hereinafter, by the method as Fig. 4, the method directly forming semi-transparent film on the transparent substrate claims Prepay method.
After peeling off the 2nd Resist patterns, complete the 2nd photomask of the present invention（Fig. 4's（f））.
So, the 2nd photomask of the present invention preferably, in transfer pattern, except master pattern and auxiliary patterns with Outer region is made up of light shielding part.
In addition, as the autofrettage beyond above-mentioned autofrettage, also can using the following method：Form shading on the transparent substrate Film simultaneously carries out pattern to it and is formed, and then forms semi-transparent film in entire surface and carries out pattern and formed（After the method is referred to as Fu Fa）.But, from the viewpoint of the deviation of the alignment preventing 2 descriptions, advantageous applications prepay method.
Material for the photomask of the 2nd photomask and the 1st photomask are same, except using Cr or Cr compound （The oxide of Cr, nitride, carbide, nitrogen oxides, carbon oxynitride etc.）In addition, can also using Ta, Mo, W or they Compound（Comprise above-mentioned metal silicide）Deng.
Additionally, being used for the material of the semi-transparent film of the 2nd photomask except Cr compound can be used（The oxide of Cr, nitrogen Compound, carbide, nitrogen oxides or carbon oxynitride etc.）, Si compound（SiO2、SOG）, metal-silicide compound（TaSi、 MoSi, WSi or their nitride, nitrogen oxides etc.）In addition, the Ti compounds such as TiON can also be used.
But, if it is considered that method is prepay in application, then preferably, semi-transparent film and photomask select there is etching choosing each other The material of selecting property.I.e. it is desired to photomask has patience for the etchant of semi-transparent film, semi-transparent film is for the etching of photomask Agent has patience.
According to this viewpoint, the material of photomask have selected Cr or Cr compound（The oxide of Cr, nitride, carbonization Thing, nitrogen oxides, carbon oxynitride etc.）In the case of, as the material of semi-transparent film, using Si compound（SiO2、SOG）、 Metal-silicide compound（TaSi, MoSi, WSi or their nitride, nitrogen oxides etc.）It is suitable.Or can also phase Instead.
It is 20～80% that semi-transparent film used in the 2nd photomask preferably exposes light transmission.This exposure light transmission It is the absorbance for the transmitted light of transparency carrier for the transparency carrier being formed with semi-transparent film, with explanation in the 1st photomask Identical, the absorbance of the representative wavelength for exposure light can be set to.Used in 2nd photomask, semi-transparent film more preferably exposes light Absorbance is 30～60%.
In addition, auxiliary patterns are trickle live width, therefore, it is difficult to measuring the exposure of this part in the state of defining pattern Light transmission（Due to being affected by diffraction of light, therefore affected by from surrounding pattern according to live width, actually thoroughly The light quantity penetrated significantly changes）.Accordingly, as the exposure light transmission of auxiliary patterns, being set to assume that makes this auxiliary patterns The sufficiently large situation of width, and suppose not to be subject to the absorbance in the case of the state of the impact of surrounding pattern, it is by transparent base The exposure light transmission of plate is set to the relative value in the case of 100%.The situation of the exposure light transmission of semi-transparent film is also same The definition of sample.
Additionally, used in the 2nd photomask, the phase-shift phase with respect to exposure light of semi-transparent film is less than 90 degree, preferably Less than 60 degree.The explanation carrying out with the 1st photomask with regard to the definition of phase-shift phase is identical.
2nd photomask of the present invention uses due to inverted phase with the border of pattern（Phase contrast is 180 degree）Light produce Raw interference（Offset）The so-called phase shifting mask of effect is different, does not substantially need the light using inverted phase.In addition, at this In bright, if the film that phase-shift phase is 180 degree, the angle of diffraction of ± 1 rank diffraction light are used to the semi-transparent film of auxiliary patterns part Diminish.Therefore, there is following trend：The angle of diffraction of ± 1 rank diffraction light is set to sufficiently large, and so that ± 1 rank is spread out on this basis Penetrate the optical system that light incides exposure machine, the effect of the thus obtained present invention is fully to obtain in phase shifting mask 's.
In addition, with regard to not needing to act on this point using the interference of light of inverted phase, the 1st photomask of the present invention is also Same.
Other features of 2nd photomask are identical with the 1st photomask, omit repeat specification.For example, with regard to used in exposure The optical characteristics of preferred exposure machine（Comprise NA, σ）, preferred relevant with the determination of the spacing of auxiliary patterns of wavelength of exposure light Condition（Comprise（1）Formula,（2）Formula）, the preferable shape etc. of master pattern and auxiliary patterns, be suitable in the 1st, the 2nd photomask.
In addition, the present invention also comprises, using the 1st photomask or the 2nd photomask, to exist by display device manufacture exposure machine The method that transfer pattern is transferred on transfer printing body.
As described above, the 1st of the present invention the, the 2nd photomask has following feature：Make the association by master pattern and auxiliary patterns ± 1 rank diffraction light made and formed incides the optical system of exposure machine.± 1 rank light is in the precalculated position of transferred surface（I.e. Make for example to exist on the XY face of transfer printing body concavo-convex, transferred surface has carried out position displacement in z-direction）, phase place phase all the time Deng interference surface has good focusing enough and to spare amount.Therefore, effectively utilize this 2 light beams to make resist photosensitive.
Additionally, being learnt according to the research of present inventor：The present invention the 1st, in the 2nd photomask, remaining except increasing focusing Beyond the effect of allowance, also have and increase the enough and to spare amount of the variation with respect to light exposure easily producing in exposure machine and drop The effect of the irradiate light quantity of low needs.
In the 1st higher photomask of the exposure light transmission of auxiliary patterns, focusing enough and to spare quantitative change this advantage big is special Significantly.On the other hand, in the 2nd relatively low photomask of the exposure light transmission of auxiliary patterns, except being not likely to produce in quilt Beyond the advantage of the loss of resist being formed on transfer article, on this point of easily carrying out retrofit also it is of great importance.
Additionally, it is not necessary to have the phase shift film of phasing back effect in the 1st, the 2nd photomask, and can obtain State the effect that focusing enough and to spare amount increases.
On the other hand, it is also possible to make the above-mentioned 1st, structure of the 2nd photomask in the range of the effect not damaging the present invention Middle have additional blooming and functional membrane.In addition it is also possible to use to possess on the surface of photomask prevent work(with reflection Can antireflection layer etc., there is the film of desired Rotating fields.
【Embodiment】
（Embodiment 1）
For using the photomask with the transfer pattern shown in Fig. 1（1st photomask of the present invention）Exposed When transferability, carry out optical simulation and evaluated.
The condition applied in simulations is as follows.
The optical system of exposure machine：Numerical aperture（NA）：0.085
Coherence factor（σ）：0.9
The wavelength of exposure light（The relative intensity of each wavelength）g：h：i=1：0.8：0.95
Master pattern（Transmittance section）：Foursquare sectional hole patterns.The length on one side（Diameter C）=2μm
Auxiliary patterns（Transmittance section）：Surround 8 side shape bandings of master pattern.Width（A）=1μm
Light shielding part is formed by the photomask of the light-proofness with more than OD3.
Spacing P is 3.0～5.0 μm（Fig. 5's（d））.
The photomask of comparative example 1（Fig. 5's（f））In transfer pattern in addition to there is no auxiliary patterns, other with real The photomask applying example 1 is identical.Additionally, the photomask of reference example 1（Fig. 5's（e））In transfer pattern be by the light of comparative example 1 The diameter of the master pattern of mask is set to pattern obtained from 2.5 μm.
＜ 1-1 focusing enough and to spare amount ＞
It is known to use process window（Process window）As evaluation focal depth（DOF）Side Deng the performance of photoetching Method.Here, if transverse axis is focal position（μm）If the longitudinal axis is light exposure（mJ/cm2Deng）, it is exposed the result with process, will The live width allowed changes（Within ± the 10% of target live width）Region as process permissible range.Additionally, allowing model in process In enclosing, if in benchmark focal position（0μm）Transferring into light exposure as target live width is Eop（Benchmark light exposure）. In process permissible range, using benchmark focal position and benchmark light exposure is as center, can be using the maximum rectangle of area To represent focus error allowance（Focusing enough and to spare amount）With exposure error allowance（Light exposure enough and to spare amount）.Now, rectangle Width be focusing enough and to spare amount, the highly light exposure enough and to spare amount by being allowed.
Therefore, Fig. 5（a）It is the value to describe the focusing enough and to spare amount with respect to certain spacing P according to the value of each spacing P Figure.In addition, Fig. 6 described later（a）It is also same figure.
As Fig. 5（a）As shown in it is known that, according to the 1st photomask of the present invention, even if spacing P be 3 μm～5 μm in Arbitrary size in the case of, focusing enough and to spare amount also than shown in comparative example 1 do not have auxiliary patterns photomask big.Understand, this , particularly when spacing P is 3 μm～4 μm, focusing enough and to spare amount is more than 20 μm, highly beneficial for 1st photomask of invention.Additionally, can Know, the 1st photomask of the present invention spacing P be 3 μm～4 μm region in, reference example 1 phase being relatively large in diameter with master pattern Focusing enough and to spare amount is favourable to ratio.
＜ 1-2 light exposure enough and to spare amount ＞
As described above, Fig. 5（b）It is to be described with respect to certain according to the value of each spacing P using process window Light exposure enough and to spare amount away from P（EL enough and to spare amount）Value figure.In addition, Fig. 6 described later（b）It is also same figure.
As Fig. 5（b）As shown in it is known that, the result of embodiment 1 spacing P be 4 μm～5 μm region in frequently relatively Example 1 is favourable.Therefore it is known that, in this region, the margin changing not only for focusing is larger, and the photograph for exposure machine The variation penetrating light quantity is also hardly affected, and can transfer desired pattern.
＜ 1-3 benchmark light exposure（Eop）＞
In process window, if in benchmark focal position（0μm）The light exposure that pattern is transferred as target live width is Eop, Fig. 5's（c）It is the figure to describe the value of Eop with respect to certain spacing P according to the value of each spacing P.Fig. 6's described later （c）Figure structure also identical.
As Fig. 5（c）Shown it is known that, the photomask of embodiment 1 compared with the photomask of comparative example 1, can with reduce about 10～20% irradiate light quantity is transferred.This point is also the excellent action effect of the present invention.In addition, in LCD exposure In machine, in the exposure carrying out the area that photomask has is given with certain irradiate light quantity, it is not that entire surface is irradiated together, and It is to adopt scan exposure, the minimizing of therefore required irradiate light quantity means shortening of production cycle, has in productivity Important meaning.
＜ 1-4 Resist patterns cross sectional shape ＞
Shown in Fig. 7 using the present invention the 1st photomask to the resist film on transfer printing body（Positive photoresist） The cross sectional shape of the Resist patterns obtaining when being exposed.It shows that according to each spacing P the benchmark in process window is burnt Point position and benchmark light exposure（Eop）When Resist patterns cross sectional shape.In addition, Fig. 8 described later is also shown with identical index Go out Resist patterns cross sectional shape.
As shown in Figure 7, as position corresponding with master pattern is formed just like making a reservation for（2.0 μm of diameter）Sectional hole patterns. In addition, producing, in the outside of sectional hole patterns, the recess causing due to auxiliary patterns（Resist loses）, become small with spacing P, The position of this recess is also close to master pattern.Wherein, in the processing carrying out transfer printing body（That is, it is under this Resist patterns The etching and processing of the thin film of layer side）When, can by generally using wet etching form the pattern of needs.
（Embodiment 2）
For using the photomask with the transfer pattern shown in Fig. 2（2nd photomask of the present invention）Exposed When transferability, carry out optical simulation and evaluated.
The condition applied in simulations is as follows.
The optical system of exposure machine：Numerical aperture（NA）：0.085
Coherence factor（σ）：0.9
The wavelength of exposure light（The relative intensity of each wavelength）g：h：i=1：0.8：0.95
Master pattern（Transmittance section）：Foursquare sectional hole patterns.The length on one side（Diameter C）=2μm
Auxiliary patterns（Semi light transmitting part）：Surround 8 side shape bandings of master pattern.Width（A）=1μm
Light shielding part is formed by the photomask of the light-proofness with more than OD3.
Used in semi light transmitting part, the exposure light transmission of semi-transparent film is 50%.
Spacing P is 3.0 μm～5.0 μm（Fig. 6's（d））.
＜ 2-1 focusing enough and to spare amount ＞
As Fig. 6（a）As shown in it is known that, according to embodiments of the invention 2（2nd photomask）（Fig. 6's（d））Even if, Spacing P be in 3 μm～5 μm arbitrary size in the case of, ratio does not have auxiliary patterns shown in comparative example 1 to focusing enough and to spare amount yet Photomask（Fig. 5's（e））Greatly.Understand, particularly when spacing P is 3.5 μm～4.5 μm, focusing is remaining for the photomask of embodiment 2 Allowance is more than 20 μm, highly beneficial.
＜ 2-2 light exposure enough and to spare amount ＞
As Fig. 6（b）As shown in it is known that, the result of the photomask of embodiment 2 is compared when spacing is 4.0 μm about Favourable compared with the photomask of example 1.
＜ 2-3 irradiate light quantity（Eop）＞
With regard in order to aimed dia is formed on transfer printing body（2μm）The exposure machine required for pattern irradiate light quantity, As Fig. 6（c）As shown in it is known that, according to the photomask of embodiment 2, compared to the photomask of comparative example 1, can with reduce More than 10% irradiate light quantity is transferred.
＜ 2-4 resist cross sectional shape ＞
Shown in Fig. 8 using the present invention the 2nd photomask to the resist film on transfer printing body（Positive corrosion-resisting agent）Carry out The cross sectional shape of the Resist patterns obtaining during exposure.Understand, formed in position corresponding with master pattern such just like predetermined （2.0 μm of diameter）Sectional hole patterns.And, the resist of the master pattern periphery being caused due to auxiliary patterns essentially without generation Loss.Therefore, in the processing of transfer printing body, extremely stable etching can be carried out.
（Embodiment 3）
Pass between the light intensity distributions being formed on transfer printing body for the exposure light investigating transmission master pattern and spacing P System, has carried out following emulation.
When grasping the position of the light intensity distributions shown in Fig. 9 and its submaximum, the condition applied in simulations is as follows.
The optical system of exposure machine：Numerical aperture（NA）：0.085
Coherence factor（σ）：0.9
The wavelength of exposure light（The relative intensity of each wavelength）g：h：i=1：0.8：0.95
Master pattern shape is set to the length on one side（Diameter C）For 2 μm of square（Identical with above-mentioned comparative example 1）.Separately Outward, auxiliary patterns are not used here.
It is shown specifically the master pattern based on embodiment 3 in Figure 10（Sectional hole patterns）Light intensity distributions on transfer printing body bent Line.Here, when setting main peak and the minimal point between the 1st nearest submaximum of main peak to the distance of main peak center as Q（μ m）, apart from the 2nd near submaximum of main peak the 2nd（Omit diagram）Minimal point and the 1st submaximum between is to the distance of main peak center For R（μm）When, Q is 3.1 μm, and R is 5.5 μm.Additionally, the distance of the maximal point of the 1st submaximum to main peak center is 3.9 μm.
Above-mentioned showing has good concordance with the result of the transferability based on spacing P shown in Fig. 5.That is, energy Enough clear and definite：By the size of spacing P is set to
Q≤P≤R…（1）
The excellent condition favourable to transfer can be obtained.Additionally, according to the research of present inventor, when auxiliary patterns When width is overall overlapping with the width of the 1st submaximum, i.e. work as satisfaction
Q≤P±（A/2）≤R…（2）
When, more excellent focusing enough and to spare amount can be obtained.Therefore it is known that, preferably to meet above-mentioned formula（1）Or（2）Side Formula carries out the design of transfer pattern.
（Embodiment 4）
For the length that in embodiment 3 shape of master pattern is set to one side（Diameter C）For 3.5 μm of square, use Method same as Example 3, has obtained the details of light intensity distributions curve（Figure 11）.This embodiment 4 and embodiment 3 phase Than, the 1st submaximum position to from peak position slightly away from side moved.
Specifically, Q is 3.8 μm, and R is 6.2 μm, and the maximal point of the 1st submaximum is 4.4 μm.
However, it is recognized that in this case, in above-mentioned formula（1）Or（2）In the case of satisfaction it is also possible to obtain larger right Burnt enough and to spare amount.Additionally, light exposure enough and to spare amount, Eop have also obtained preferred result.
Additionally, with regard to spacing P is set to above-mentioned excellent effect obtained from above range, not only in the 1st photomask Obtain, also obtain in the 2nd photomask.
More than, describe the present invention with reference to multiple embodiments, but the invention is not restricted to above-described embodiment.At this Bright structure and in detail in, in detail in the claims in described the spirit and scope of the present invention, this area skill can be carried out Art personnel may be appreciated various changes.

Claims (8)

1. a kind of display device manufacture photomask is it is characterised in that described display device manufacture photomask is equimultiple exposure Display device manufacture photomask, have by formed at least photomask on the transparent substrate carry out pattern formation and Formed, comprise light shielding part and the transfer pattern of transmittance section, wherein,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by transmittance section or half Transmittance section is constituted,
Phase contrast between the exposure light of the exposure light of master pattern described in transmission and auxiliary patterns described in transmission is more than 0 degree 90 degree Hereinafter,
Setting the distance between the center of described master pattern and center of width of described auxiliary patterns as spacing P,
In the light intensity distributions curve of the light intensity distributions that the transmitted light of the described master pattern of expression is formed on transfer printing body, if The distance of main peak and the minimal point between the 1st nearest submaximum of described main peak to main peak center is Q, if apart from described Minimal point between the 2nd near submaximum of main peak the 2nd and described 1st submaximum to main peak center distance be R when,
Meet Q≤P≤R, the unit of wherein said P, Q, R is μm.
2. display device manufacture photomask according to claim 1, it has by being formed on the transparent substrate Photomask carries out pattern formation and forms, comprises the transfer pattern of light shielding part and transmittance section, and this display device manufacture is used up Mask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, is had less than the diameter of master pattern and cannot be divided by exposure The width distinguished, is made up of transmittance section,
It is created substantially absent phase place in the exposure light of master pattern described in transmission with the exposure light of auxiliary patterns described in transmission to each other Difference.
3. display device manufacture photomask according to claim 2 it is characterised in that
When the limit of resolution of the exposure machine for described exposure is B, during a diameter of C of described master pattern, described auxiliary patterns Width A meets A≤B/2 and A≤C/2, and the unit of wherein said A, B, C is μm.
4. display device manufacture photomask according to claim 1, it has by being formed on the transparent substrate Semi-transparent film and photomask carry out pattern formation and form, comprise the transfer pattern of light shielding part, transmittance section and semi light transmitting part, This display device manufacture photomask is characterised by,
Described transfer pattern has：
Master pattern, it is made up of transmittance section, a diameter of less than 4 μm；And
Auxiliary patterns, its configuration, in the periphery of described master pattern, has the width less than the diameter of master pattern, by semi light transmitting part structure Become.
5. display device manufacture photomask according to claim 4 it is characterised in that
When the limit of resolution of the exposure machine for described exposure is B, during a diameter of C of described master pattern, described auxiliary patterns Width A meets A≤B and A≤C, and the unit of wherein said A, B, C is μm.
6. the display device manufacture photomask according to any one in Claims 1 to 5 it is characterised in that
When setting the width of described auxiliary patterns as A, meet Q≤P ± (A/2)≤R, the unit of wherein said A is μm.
7. the display device manufacture photomask according to any one in Claims 1 to 5 it is characterised in that
Described auxiliary patterns surround described master pattern and are formed.
8. a kind of pattern transfer-printing method it is characterised in that
This pattern transfer-printing method usage right requires the display device manufacture photomask described in any one in 1～5, passes through Display device manufacture exposure machine carries out pattern transfer on transfer printing body.
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6581759B2 (en) * 2014-07-17 2019-09-25 Hoya株式会社 Photomask, photomask manufacturing method, photomask blank, and display device manufacturing method
JP6335735B2 (en) * 2014-09-29 2018-05-30 Hoya株式会社 Photomask and display device manufacturing method
JP2016224289A (en) * 2015-06-01 2016-12-28 Hoya株式会社 Method for manufacturing photomask, photomask and method for manufacturing display device
JP6726553B2 (en) * 2015-09-26 2020-07-22 Hoya株式会社 Photomask manufacturing method and display device manufacturing method
KR101755318B1 (en) 2015-11-19 2017-07-10 롬엔드하스전자재료코리아유한회사 Method for preparing column spacer
WO2017086590A1 (en) * 2015-11-19 2017-05-26 Rohm And Haas Electronic Materials Korea Ltd. Method for preparing column spacer
CN106773524A (en) * 2017-02-20 2017-05-31 京东方科技集团股份有限公司 Mask plate
US11592740B2 (en) 2017-05-16 2023-02-28 Applied Materials, Inc. Wire grid polarizer manufacturing methods using frequency doubling interference lithography
US10942575B2 (en) 2017-06-07 2021-03-09 Cisco Technology, Inc. 2D pointing indicator analysis
TWI710850B (en) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 Photomask, photomask blank, method of manufacturing a photomask, and method of manufacturing an electronic device
JP6731441B2 (en) * 2018-05-01 2020-07-29 Hoya株式会社 Photomask and display device manufacturing method
JP2019012280A (en) * 2018-09-19 2019-01-24 Hoya株式会社 Photomask, production method thereof, photomask blank, and production method of display device
JP6872061B2 (en) * 2020-05-11 2021-05-19 Hoya株式会社 Manufacturing method of photomask and display device
CN113608406A (en) * 2021-05-27 2021-11-05 联芯集成电路制造(厦门)有限公司 Photomask structure
CN118103771A (en) * 2022-09-27 2024-05-28 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof, mask plate and display device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2881892B2 (en) * 1990-01-16 1999-04-12 富士通株式会社 Projection exposure mask
JPH05165194A (en) * 1991-12-16 1993-06-29 Nec Corp Photomask
JP2882233B2 (en) * 1993-03-29 1999-04-12 凸版印刷株式会社 Method for manufacturing phase shift mask with auxiliary pattern
JP3283624B2 (en) * 1993-04-12 2002-05-20 株式会社日立製作所 Photo mask
JP3577363B2 (en) * 1994-06-29 2004-10-13 株式会社ルネサステクノロジ Method for manufacturing semiconductor device
JPH1092706A (en) * 1996-09-10 1998-04-10 Sony Corp Exposure method and manufacture of semiconductor device using the exposure method
JP2002323746A (en) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd Phase shift mask and hole pattern forming method using the same
JP2002351046A (en) * 2001-05-24 2002-12-04 Nec Corp Phase shift mask and its design method
JP4314285B2 (en) * 2003-02-17 2009-08-12 パナソニック株式会社 Photo mask
JP2008116862A (en) 2006-11-08 2008-05-22 Elpida Memory Inc Photomask
JP5524447B2 (en) * 2007-09-25 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル Exposure mask, pattern forming method, and exposure mask manufacturing method
JP2009169255A (en) * 2008-01-18 2009-07-30 Nsk Ltd Exposure device, method of manufacturing substrate, and mask
JP5106220B2 (en) * 2008-04-10 2012-12-26 キヤノン株式会社 Original data generation program, original data generation method, illumination condition determination program, illumination condition determination method, and device manufacturing method
JP2012073326A (en) * 2010-09-28 2012-04-12 Toppan Printing Co Ltd Photo mask, photo mask blank and photo mask manufacturing method

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