TW386179B - Method for forming pattern in semiconductor device, mask used in method and method for manufacturing mask - Google Patents

Method for forming pattern in semiconductor device, mask used in method and method for manufacturing mask Download PDF

Info

Publication number
TW386179B
TW386179B TW085113265A TW85113265A TW386179B TW 386179 B TW386179 B TW 386179B TW 085113265 A TW085113265 A TW 085113265A TW 85113265 A TW85113265 A TW 85113265A TW 386179 B TW386179 B TW 386179B
Authority
TW
Taiwan
Prior art keywords
light
layer
phase
shifting
region
Prior art date
Application number
TW085113265A
Other languages
Chinese (zh)
Inventor
Sung-Chul Lim
Sung-Yong Moon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW386179B publication Critical patent/TW386179B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method for forming a pattern on a semiconductor substrate using a half tone-type phase shift mask , a mask used for the method and a method for manufacturing the mask are provided. The method for forming the pattern includeds the steps of forming a layer to be patterned on a semiconductor substrate, forming an anti-reflective layer on the layer, forming a photsosensitive layer on the anti-refective layer, and performing a photolithography using a mask. Threrfore, according to the method for forming the pattern of the presnet invention, it is possible to reliably from a pattern since it is possible to preent a ""side-lobe phencomenon"".

Description

Α7 Β7 五、發明説明（1 ) 本發明係有两在半導齷裝置中形成匾樣之方法、用於 該方法之光睪，Μ及製堆光軍之方法。 在製造半導釅積體«路時，摻在矽基之微小面稹内的 雜質含量應該精確地控制，而且逋些匾域應彼此互相連接 ，大家都知道，限制逭些匾域的醒揉是由石販彩印法來形 成的。 石販彩印法有個問題，就是當稹髒密度增加時，樣 内會由於’鄭近效醮’而產生缺陷，亦即當形成方塊鼷樣時 ，光線鐃射會使方塊_樣變圓，此現象隨著半導體裝置的 積黼密度增加而變得更睹重。 利用丨ΒΜ所設計的相移光罩來改善解像度，近來己經 被提謙來當作改善光學對比的方法（參考軎目：ΙΒΜ 1986, IEEE Trans.Elect..Devices.Vol.ED-29,1982.CP 1828; 1988,Fall Applied Physics Meeting 4a-K-7,8,p.497; SPIE,Vol.1463,Optical/Laser Microlithography IV, 1991,pp.423-427) » 經濟部中央梯準局貝工消費合作社印装 (請先閲讀背面之注f項再填寫本頁) 在相移光罩中，光軍圏樣和相移裝置在透明基底上面 形成，在利用相移光罩來形成顯樣的方法中，焦點的解像 度或深度俤利用光線的干涉或局部干涉將所要尺寸的_樣 曝光來增加，亦即在類似行格的重璺麵樣中，當鄰近光圈 所發射出的光線其相位改變180度時，由於光圈在陰暗部 份的光線強度變成”零”，因此鄰近的光圈被分開。當光線 通遇光罩基底或相移裝置軟片時，波長缩短至除Μ在真空 中的折射率的值，因此，當相同柑位的光線通過光軍時， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公嫠） 經濟部中央標準局貝工消費合作社印装 A7 _B7_ 五、發明説明（2 ) 波長根據相移裝置的存在與否而改變。 此時，當光徑的差為0時， β =2 π t(η-1>/λ 此處n為相移裝置的折射率，t為相移裝置的厚度，而 λ爲所用光束的波長。在此，當0等於》時，通遇相移裝 置的光束具有相反的柑位，因此，由於通遇光線傳導部份 Μ及通遇相移装置的光線之相差，使得通遇光罩的光嫌強 度變成”零”，並且當相移装置位於光罩_樣的邊錁時，在 圔樣邊界的對比會增加。 玆以利用此原理的相移光罩作爲例子，具有半色型態 的相移光單，其陰暗部份的導光性從”零”上升到不完全是 ”零”的值。 由於半色型態的相移光罩能夠應用在重要半導體裝置 的製造上，而與設計無鼷，因此實際上能夠用於重叠_樣 ，例如行格或接觸點匾樣。 由於不像傳統的細撤圏樣形成方法，因此使用相移光 單的圔樣形成方法被認為是大量生產半導鱧裝置的一項先 進技術，只要改變光單的製造方法，而不需要任何額外的 設備，藉由鐃射光的逆轉功效，就能使解像增加大約30% 〇 第1圏爲傳统半色型態相移光單實例的截面圏。 參考號碼10和12分別表示玻》基底和半色型態相移裝 置，在光單内，ΙΟΟΧ強度的光線在相移裝置未形成的光線 傳導部份處傳遞，而6〜125；強度的光線則在半色型態相移 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） (請先Η讀背面之注意事項再填寫本頁) Γ -A. -5 - 五、發明説明（ A7 B7 經濟部中央樣準局貞工消費合作社印製 裝置形成處的部份傳遞。 第2A圏到第2C·為利用傅统的半色型態相移光單來說 明圏樣形成方法的截面圈。 第2A·為示出了半導醱基底20和感光層圜樣22的截面 ，半色型態柑移光罩的鼸樣透過感光靥圓樣來轉印。 S光β矫不希望的減損會由於6〜12：ϋ強度的光線通通 半色型態移位裝置（第1圔的12)而在半導髏基底上面產生 ，稱之為”侧葉現象”，由第Β_的參考字元” Α”來表示。如 同在第2Α匾中所示的裸片之平坦表面上，此一現象可Κ忽 略，然而，此效應在基底裝置形成處的薄片上面會很霰重 Ο 第2Β鼷示出了在基底装置形成處之薄片上面的側葉統 合慵形，由於薄片20上面的電極24和絕鎵薄膜26,而在其 中形成巨大的階级差異。 笛光線照射在嚴重的階级差異形成處之薄片上面所形 成的感光層時，如第2Β匾中所示之凹陷部份的絕緣薄膜26 ，其反射雇會使光線產生不規則的反射，此時由於來自反 射層的不規則反射光線被聚焦，而造成所不希望的曝光變 駸重，因而駸重損壤感光層樣。 第2CD爲示出了圖樣透過其而轉換的薄片之截面圖， 感光層樣22之減損會在階级差異嚴重之部分產生，當感 光層樣之減損駸重時，邸使假若在第2C画中沒有接觸點 ，仍然會產生類似接觸黏的小孔（參考字元Β〉，因而破壞 裝置的特色。 請 先 閲 之 注Α7 Β7 V. Description of the invention (1) The present invention has two methods for forming a plaque in a semiconducting device, a photometer, M, and a method for manufacturing a light army. When manufacturing semiconducting aggregates, the impurity content in the silicon-based micro-planes should be accurately controlled, and these plaque fields should be connected to each other. Everyone knows that it is necessary to limit the awakening of these plaque fields. It is formed by the stone vendor color printing method. There is a problem with the stone print color printing method. When the density of the viscera increases, the sample will have defects due to 'Zheng Jinxiao', that is, when the square pattern is formed, the light beam will make the square_ pattern round. This phenomenon It becomes more important as the accumulation density of semiconductor devices increases. The use of phase shift masks designed by BM to improve resolution has recently been proposed as a method to improve optical contrast (Refer to heading: IB 1986, IEEE Trans.Elect .. Devices.Vol.ED-29, 1982.CP 1828; 1988, Fall Applied Physics Meeting 4a-K-7, 8, p. 497; SPIE, Vol. 1463, Optical / Laser Microlithography IV, 1991, pp. 423-427) »Central Government Bureau of the Ministry of Economic Affairs Printed by Bei Gong Consumer Cooperative (please read the note f on the back before filling this page) In the phase shift mask, the light army pattern and phase shift device are formed on the transparent substrate, and the phase shift mask is used to form the display In this method, the resolution or depth of the focal point is used to increase the exposure of the sample of the desired size by using the interference of light or local interference. That is, in a repetitive surface pattern similar to a grid, when the light emitted by the adjacent aperture is changed, When the phase is changed by 180 degrees, since the light intensity of the dark portion of the aperture becomes "zero", the adjacent apertures are separated. When light passes through the mask substrate or the film of the phase-shifting device, the wavelength is shortened to the value of the refractive index except for M in a vacuum. Therefore, when the light of the same position passes through the light army, the Chinese paper standard (CNS) ) A4 specification (210X297 gong) Printed by A7 _B7_, Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) The wavelength is changed according to the presence or absence of a phase shift device. At this time, when the difference in optical paths is 0, β = 2 π t (η-1 > / λ where n is the refractive index of the phase shifting device, t is the thickness of the phase shifting device, and λ is the wavelength of the beam used Here, when 0 is equal to》, the light beams of the phase-shifting device have opposite positions. Therefore, due to the difference between the light-transmitting part M and the light of the phase-shifting device, the light of the light-passing phase shift device The light intensity becomes "zero", and when the phase shift device is located on the edge of the mask, the contrast at the boundary of the sample will increase. The phase shift mask using this principle is taken as an example, and has a half-color type. Phase shift light sheet, the light conductivity of its dark portion has risen from "zero" to a value that is not exactly "zero." Because a half-color phase shift mask can be used in the manufacture of important semiconductor devices, It has nothing to do with design, so it can actually be used for overlapping patterns, such as line grids or contact point plaque patterns. Since it is not like the traditional fine-removal pattern formation method, the pattern formation method using a phase-shifted light sheet is considered to be An advanced technology for mass-producing semiconducting devices, as long as the manufacturing method of the light sheet is changed Without the need for any additional equipment, through the reversal effect of the thoracic light, the resolution can be increased by about 30%. The first 圏 is the cross section of a single instance of a traditional half-color phase-shifted light. 号码 Reference numbers 10 and 12 Representing the glassy substrate and the half-color phase shift device, in the light sheet, 100 × intensity light is transmitted at the light-conducting part that is not formed by the phase shift device, and 6 ~ 125; the intensity light is in the half-color type. Phase shift This paper scale is applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling out this page) Γ -A. -5-5. Description of the invention (A7 B7 Economy Partial transmission of the printing device formation site of the Central Sample Prototype Bureau of Zhengong Consumer Cooperative. Sections 2A 圏 to 2C · are cross-section circles that illustrate the method of forming the sample using the half-color phase shift light sheet of Fu Tong. 2A · In order to show the cross-sections of the semiconducting substrate 20 and the photosensitive layer sample 22, the sample of the half-color citrus shift mask is transferred through the photosensitive circle sample. 6 ~ 12: The light of ϋ intensity passes through the half-color type shifting device (12 of the first 圔) and Generated on the base of the semi-conducting skull, it is called the "side leaf phenomenon", which is represented by the reference character "A" of the B_. As on the flat surface of the die shown in the 2A plaque, this phenomenon can be IK is ignored, however, this effect will be very heavy on the sheet where the base device is formed. Section 2B shows that the side leaves on the sheet where the base device is formed are integrated into the shape of the sheet. Gallium film 26, and a huge class difference is formed in it. When the flute light irradiates the photosensitive layer formed on the sheet where the serious class difference is formed, the insulating film 26 is a concave portion as shown in the second plaque. , Its reflection will cause irregular reflection of light. At this time, because the irregular reflected light from the reflective layer is focused, the undesired exposure becomes heavier, which seriously damages the soil photosensitive layer. The second CD is a cross-sectional view showing the sheet through which the pattern is converted. The degeneration of the photosensitive layer 22 will occur in the part where the class difference is serious. When the reduction of the photosensitive layer is heavy, the di There is no contact point in it, but a small hole similar to contact sticky will still be generated (reference character B>), which will destroy the characteristics of the device. Please read the note first

I 頁 訂 本紙張尺度適用中鬮國家揉準（CNS > A4規格（210X297公釐） 經濟部中央揉率局貝工消费合作社印製 A7 B7 五、發明説明（4 ) 本發明的目的是要提供一種藉由防止”_第現象”，來 確實地在半導讎基底上面形成微小樣的疆樣形成方法。 為了逹到上述目的，提供了一種形成半導鼸装置樣 之方法，包括有在半導醱基底上形成園樣層的步篇、在層 面上形成一健抗反射層、在抗反射層上形成一催想光層， Μ及利用進行石販影印。 抗反射曆最好是由聚合物、氧化物、«化物、磺化物 、光阻蝕刻_中逋擇一樣來形成。 本發明的另一值目的是要提供一種確實能夠在半導體 基底上面形成醒樣的光軍。 欲逹上述目的，提供了一種相移光罩，包括有一鶴導 光性基底、改變傅導光線相位、在導光性基底上形成的相 移装置、以及使第一光單區域的導光性大於第二光軍匾域 的控制導光性方法，對應於第一薄片區域的第一區域相對 地具有較大的階级差異，而對應於第二薄片匾域的第二匾 域則相對地具有較小的陏级差異。 導光性控制方法最好是包括在第一光罩匾域内形成一 導光性控制薄膜。 導光性控制薄膜從Cr、Al、Au、Pt、感光層、Spin On Glass(SOG)、 CrO、 CrON、 MoSix、 MoSiO、 MoSiON、 W 、以及Wsix中遘揮一樣逸擇來形成。 本發明通有另一鏟目的，就是提供一但製造上逑光單 的適當方法。 欲達上述目的，提供了一棰製造相移光睪的方法，其 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先W讀背面之注項再填寫本寊) 訂· 五、發明説明（ A7 B7 步篇包括包括在一透明基底上建績形成相移裝置層和導光 性控制薄膜、將導光性控制薄臢的預定部份曝光而形成第 一感光曆_樣、利用第一感光層_樣來裂造感光性控制薄 膜和相移裝置層、在所產生的结構上面形成第二感光層， Μ使光軍的一部份曝光，曝光的光睪部份和鼷樣被轉換處 的薄片部份一致，其隈级的差異很小，藉由移_1第Ζ1Μ 光層樣所曝光的導光性控制薄膜之預定部份，來形成導 光性控制薄膜。 導光性控制薄膜樣最好是從Cr、Al、Au、Pt、感光 層、spin on glass(SOG}、 CrO、 CrON、 MoSix、 .MoSiO、 MoSiON、W、M及hlsix中選擇一樣來形成，M降低導光性 Ο 依據本發明，藉由在半色型態的相移光軍上遘擇性地 形成導光性控制薄膜，或者當在形成階级差異處的薄片層 上形成抗反射層之後鍍上想光層，Μ防止光線不規則反射 所造成的”钿葉現象”，因此確實可Μ形成一値徼小的圓樣 請 先 閲 之 注 I 再 rl 訂 % 經濟部中央揉準局貝工消费合作社印裝 藉由參考附鼸來詳細地說明較佳實施例，上述本發明 的目的和優點會變得更明顯，其中： 第1_爲示出了傅統半色型態相移光軍例子的截面圔 第2A矚到第2C圓爲利用第1·的傳统半色型態相移光 單來說明_樣形成方法的截面圏； 第3鼸潙示出了依據本發明之半色型態相移光罩的截 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） 經濟部中央梂準局貝工消費合作社印製 Α7 Β7 五、發明説明（6 ) 面鼷； 第4A_到第4E圈為說明了本發明之半色型態相移光罩 製造方法的截面匾； 第5 _為依雒本發明在第3_中所示之一項實施例， 來說明圏樣形成方法的\截面鼷； 第6·爲依鐮本發明之另一項實施例，來說_樣形 成方法的截面麵。 第3_爲示出了依據本發明之半色型態相移光軍的截 面鼷。 參考轚碼30、32和36分別表示玻《基底、半色型態相 移裝置和導光性控制薄膜圈樣。 半色型態相移光罩32和導光性控制薄膜鼷樣36在隈级 差異較大的遥域一起形成，例如對醵於周園迺路部份的光 罩匾域。 導光性控制薄膜圏樣36是由能夠降低導光性的材料來 形成，亦邸 Cr、Al、Au、Pt、感光層、spin on glass (SOG)、 CrO、 CrON、 MoSix、 MoSiO、 MoSiON、 W或Wsix〇 根據上述的光睪，傳導控制薄膜在光軍的相移裝置上 面形成，因潙感光層滅損的部份會由於階级差異的變大而 變大，因此，由於光線照射在階级差異大之部份的量小於 照射在薄片上其他部份的量，所Μ能夠降低”侧葉現象”。 第4Α圔到第4Ε圈爲說明了在第3麵中所示本發明之半 色型筋相移光單製造方法的截面鼸。 第4Α·爲示出了用來形成半色型態相移裝置層32和導 本紙張尺度適用中國國家標準（CNS )八4規格（210X297公釐） J------------ c (請先聞讀背面之注！^項再填寫本頁) -訂 9 經濟部中央棣车局®:工消费合作社印製 A7 B7 五、發明説明（7 ) 光性控制薄膜36的階级之截面鼷。 當將諸如MoSiON或CrON等能夠改變傅導光線相位並且 能夠改變傅導光線導光性的相移材料沈澱，而在玻《基底 30上面形成半色型態相移装置層32之後，則導光性控制薄 膜36便形成。導光性控制薄膜樣36是由能夠降低導光性 的材料來形成，亦即Cr、Al、Au、Pt、感光層、spin on glass(SOG)、 CrO、 CrON、 MoSix、 MoSiO、 MoSiON、 WK 及 Wsix ° 第4B_為示出了用來形成第一感光層圖樣38的階级之 截面。 當在導光性控制薄膜36上面鍍上感光層之後，光線傅 導部份之導光性控制薄膜被曝光的第一感光層画樣38藉由 將怒光暦薄膜曝光和顯像來形成。 第4C國為示出了用來形成半色型態相移装置層32和導 光性控制薄膜36之陏级的截面·。 利用第一感光曆園樣（第4B_2 38>當作蝕刻光罩，在 導光性控制薄膜36上面進行湄式蝕刻，接著當光線傳導部 份的基底30利用第一感光層_樣38當作蝕刻光軍，在半色 型態相移裝置層32上面進行乾式蝕刻而曝光之後，則第一 感光層_揉38被移除。 第4DBT爲示出了用來形成第二感光層画樣40之陏级的 截面圔。 將感光層鍍在第4C·的材料之整餡表面上之後，則第 二感光層鼷樣40在導光性控制薄誤必須藉由將感光層曝光 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） (请先閱讀背面之注¾事項再填窝本寊) 訂 10 經濟部中央標準局負工消費合作社印装 Α7 Β7 五、發明説明（8 ) 和顯像的的部份之處形成，此時，第二感光層圓樣40形成 ，使得在_樣藉Μ轉捵之薄片部份的感光層被移除，其中 的階级差異並不大，例如和細胞陣列相對應以及剩餘在薄 片部份上面的部份，而其中方向差異較大之處，例如和周 園迴路部份相對應的部份。 第4DBI悉示出了用來形ϋ光性控制薄膜_¥36之階 级的截面匾。 當利用第二想光層匾樣（第4D鼷的40)笛作光軍來形成 導光性控制薄膜之後，導光性控制薄膜颺樣36藉由移除第 二感光層!樣來形成。 因此，導光性控制薄膜·樣在與薄片部份相對醮的光 罩相移裝置之半色型態相移光單於是完成，而其中的隋级 差異非常大，猶如周園的迺路部份》 第5團為用來說明利用根據第4Α圔到第4Ε_所製造的 半色型態柑移光罩之撤小圏樣形成方法的截面·。 第5圓的上面部份示出了本發明之半色型態相移光睪 的範例，參考*碼30、32和36分別代表玻璃基底、半色型 態相移裝置和導光性控制圈樣。 第5圔的下面部份示出了在其上面之圔樣乃由半色型 態相移光罩來轉捵的隈级差異之薄片，參考號碼20、24、 25、26和22分別代表薄片、閘電極、絕鎵薄膜（兩個）和感 光層。 參看第5圓，導光性控制薄膜圈樣36在與要轉換圈樣 處的薄片部份相對應的相移光單32上面形成，其中的階级 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注項再填寫本頁) -'訂 11 經濟部中央標準局貝工消费合作社印製 Α7 Β7 五、發明説明（9 ) 差異非常大。由於通遇導光性控制薄暌園樣36的光線之導 光性很低，所Μ傅到_级差異大的部份之想光層的光線量 小於傅到其他部份的光線量，因此，由於能夠防止因階级 差異大之部分的光搞不規則反射之”供ϋ現象”，故確實能 夠形成一樣。 第6爲說明了本發明利用《故半色型態栩轾光單之 樣形成方法的另一資施例之截面圔。 參看第6醒，當在指级差異形成處之半導體基底上面 的圏樣形成之後，例如在欲形成的暦上面鍍上Ι,ΟΟΟΑ厚度 的抗反射材料之絕缘薄膜25和抗反射層50,則感光層22被 鍍上，然後，利用傳統半色型態相移光軍將感光層圏樣22 曝光並顯像，來形成所要圈樣的感光層園樣，藉由在感光 層22的下面部份形成抗反射層50,則可確實地形成一圈樣 〇 抗反射層50是由具有低反射率的材料所形成，亦邸聚 合物、氧化物薄膜、氱化物薄膜、磺化物薄膜、或光阻蝕 刻爾。 根據本發明，藉由在半色型態的相移光軍上蘧擇性地 形成導光性控制薄膜，或者當在形成階级差異處的薄片層 上形成抗反射層之後塗上一感光饜，以防止光線不規則反 射所造成的”供葉現象”，因此確實可Μ形成一鏑撤小的匯 樣° 本發明並不偈限於上述的實施例，並且可Μ淸楚地了 解，任何精於該技藝的人都能對本發明的範園和精神作許 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -ϋ- ^^^1 nn I nn ' · - Γ (請先閲讀背面之注意事項再填寫本頁) --訂 '^· -12 - A7 B7 五、發明説明（10 ) 多的變化。 元件檷號對照表 10 玻璃基底 12 相移光單 20 半導鼸基底 22 感光層麵樣 24 霣槿 26 絕续薄膜 30 玻璃基底 32 半色型態相移光軍 36 導光性控制薄誤圏樣 38 第一感光曆圃樣 40 第二感光層圈樣 50 抗反射層 (請先閲讀背面之注意事項再填寫本頁) --訂 經濟部中央標準局員工消費合作社印策 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ 1 〇 ^ 13The paper size of the I-page edition is applicable to the standards of the Central European Countries (CNS > A4 size (210X297 mm). Printed by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, A7, B7. 5. Description of the invention (4) The purpose of the present invention is to Provided is a method for forming a minute sample on the semiconductor substrate by preventing the "_phenomenon". In order to achieve the above purpose, a method for forming a semiconductor device is provided. Steps for forming a round-like layer on the semiconducting substrate, forming a healthy anti-reflection layer on the layer, forming a reminder light layer on the anti-reflection layer, and using photolithography for stonemongering. The anti-reflection calendar is best made by Polymers, oxides, compounds, sulfides, photoresist etc. are formed in the same way. Another value object of the present invention is to provide a light army that can indeed form a wake on a semiconductor substrate. Aim, a phase-shifting photomask is provided, which includes a crane light-guiding substrate, a phase-shifting device for changing the phase of the light-guiding ray, and a phase-shifting device formed on the light-guiding substrate, and the light-guiding property of the first light single region is greater than that of the second light-guiding area. Light The method of controlling the light guide of the military plaque field has a relatively large class difference in the first region corresponding to the first sheet region, while the second plaque field corresponding to the second sheet region has a relatively small Level difference. The light guide control method preferably includes forming a light guide control film in the plaque area of the first photomask. The light guide control film includes Cr, Al, Au, Pt, photosensitive layer, Spin On Glass (SOG ), CrO, CrON, MoSix, MoSiO, MoSiON, W, and Wsix are formed by the same alternative method. The present invention has another object of the shovel, is to provide an appropriate method for the manufacture of a single lump sheet. To achieve the above The purpose is to provide a method for making phase-shifted light beams. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the notes on the reverse side before filling out the paper). Description of the Invention (A7 B7 step includes forming a phase shift device layer and a light guide control film on a transparent substrate, exposing a predetermined portion of the light guide control film to form a first photosensitivity sample, using First photosensitive layer_like to crack photosensitivity A thin film and a phase shift device layer are formed, and a second photosensitive layer is formed on the generated structure. A part of the light army is exposed, and the exposed light part is consistent with the sheet part where the sample is converted. The difference in order is small, and the light guide control film is formed by shifting a predetermined part of the light guide control film exposed by the _1st light layer sample. The light guide control film sample is preferably from Cr, Al , Au, Pt, photosensitive layer, spin on glass (SOG), CrO, CrON, MoSix, .MoSiO, MoSiON, W, M, and hlsix are selected and formed in the same way, M reduces the light guiding property. 0 According to the present invention, by using The half-color type phase-shifted light beam is selectively formed with a light guide control film, or when an anti-reflection layer is formed on the sheet layer where the class difference is formed, a light-reflective layer is plated to prevent irregular reflection of light. The "leaf-leaf phenomenon" caused by it, can indeed form a small circle sample, please read the note I and then rl order% printed by the Central Government Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. While the preferred embodiments are described, the objects and advantages of the present invention described above may vary. It is more obvious, where: 1_ is a cross-section showing an example of a futuristic half-colored phase-shifted light army. The 2A to 2C circle is based on the traditional half-colored phase-shifted light beam from the 1 ·. Explanation _ Section 圏 of the sample formation method; Section 3 shows the cut-off paper dimensions of the half-color type phase shift mask according to the present invention. Applicable to China National Standards (CNS) A4 (210X297 mm). Printed by the Central Government Bureau of Standardization, Shellfish Consumer Cooperative, A7, B7 V. Description of the invention (6) Faceplates; Circles 4A to 4E are cross-section plaques illustrating the method for manufacturing the half-color phase shift mask of the present invention; 5 _ is an embodiment shown in the 3_ of the present invention, to explain the \ section of the method for forming a sample; 6 · is another embodiment of the present invention, which is _ sample Forming a cross section. Section 3_ is a cross-sectional view showing a half-color type phase-shifted light army according to the present invention. Reference codes 30, 32, and 36 denote glass substrates, half-color phase-shifting devices, and light guide control film circle samples, respectively. The half-color phase shift mask 32 and the light-guiding control film sample 36 are formed together in remote areas with large differences, such as the mask plaque area facing the road section of Zhouyuan. Light guide film 36 is formed of a material capable of reducing light guide. Cr, Al, Au, Pt, photosensitive layer, spin on glass (SOG), CrO, CrON, MoSix, MoSiO, MoSiON, W or Wsix〇 According to the above-mentioned light beam, the conduction control film is formed on the phase shift device of the light army. Because the damaged portion of the light-sensitive layer will become larger due to the larger class difference, therefore, the light is irradiated on The amount of the large part difference is smaller than the amount of the other parts irradiated on the sheet, so that the "lateral leaf phenomenon" can be reduced. Circles 4A 圔 to 4E are cross-sections 说明 which illustrate the method for manufacturing a half-color rib phase shift light sheet of the present invention shown on the third side. Section 4A · shows the phase shift device layer 32 used to form the half-color type and the paper size of the guide. Applicable to China National Standard (CNS) 8-4 specifications (210X297 mm) J ---------- -c (please read the note on the back! ^ item before filling out this page)-Order 9 Printed by the Central Government Bureau of the Ministry of Economic Affairs®: Printed by the Industrial and Consumer Cooperatives A7 B7 V. Description of the invention (7) Photometric control film 36 The cross section of classes is rampant. After depositing a phase-shifting material such as MoSiON or CrON that can change the phase of the light-guiding light and the light-guiding property of the light-guiding light, and after forming a half-color phase-shifting device layer 32 on the glass 30, the light is guided. The property control film 36 is formed. The light guide property control film sample 36 is formed of a material capable of reducing the light guide property, that is, Cr, Al, Au, Pt, a photosensitive layer, spin on glass (SOG), CrO, CrON, MoSix, MoSiO, MoSiON, WK And Wsix ° 4B_ is a cross section showing the steps used to form the first photosensitive layer pattern 38. After the photosensitive layer is plated on the light-guiding control film 36, the first photosensitive layer pattern 38 where the light-guiding control film of the light-guiding portion is exposed is formed by exposing and developing the iris film. Country 4C shows a cross-section of the first order for forming a half-color phase shift device layer 32 and a light guide control film 36. Using the first photosensitive calendar pattern (No. 4B_2 38) as an etching mask, Mae-type etching is performed on the light guide control film 36, and then when the substrate 30 of the light transmitting portion uses the first photosensitive layer _ sample 38 as Etching Guangjun, after performing dry etching on the half-color phase-shifting device layer 32 and exposing it, the first photosensitive layer _ rub 38 is removed. The fourth DBT shows the pattern 40 used to form the second photosensitive layer. After the photosensitive layer is plated on the whole filling surface of the 4C · material, the second photosensitive layer sample 40 has a poor light-conducting control error, which must be applied by exposing the photosensitive layer to the paper size. China National Standard (CNS) A4 specification (210X297 mm) (please read the notes on the back and fill in the notes here) Order 10 Printed by the Central Standards Bureau of the Ministry of Economic Affairs Off-line Consumer Cooperatives A7 B7 5. Invention Description (8) And the developed part is formed. At this time, the second photosensitive layer circle sample 40 is formed, so that the photosensitive layer in the thin film portion of the sample is removed, and the class difference is not large. , Such as corresponding to the cell array and remaining on the thin section Part, and where the direction differs greatly, such as the part corresponding to the Zhouyuan circuit part. The 4DBI shows the cross-section plaque used to form the light control film _ ¥ 36. When After using the second photo-layer plaque sample (40th of 4D 鼷) as the light army to form the light guide control film, the light guide control film Yang 36 is formed by removing the second photosensitive layer! The light-transmitting control film · Semi-color type phase-shifting light sheet of the photomask phase-shifting device which is opposite to the thin-film part is then completed, and the Sui-level difference among them is very large, just like the Kushiro part of Zhou Yuan 》 The fifth group is a cross-section for explaining a method for forming a small ridge pattern using the half-color citrus shift masks manufactured in accordance with 4A 圔 to 4E_. The upper part of the 5th circle shows the present For examples of the half-color phase-shifting light beams of the invention, the reference codes 30, 32, and 36 represent glass substrates, half-color phase-shifting devices, and light-conducting control circles, respectively. The lower part of the fifth figure shows The sample on it is a half-color type phase shift mask to transform the thin difference of the grade, reference number 20, 24, 2 5, 26, and 22 represent the sheet, the gate electrode, the gallium insulating film (two), and the photosensitive layer, respectively. Referring to the fifth circle, the light guide control film circle sample 36 corresponds to the portion of the thin film where the circle sample is to be converted. The phase shift light sheet 32 is formed above, and the paper size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the note on the back before filling this page)-'Order 11 Central Standard of the Ministry of Economic Affairs Printed by the local shellfish consumer cooperative A7 Β7 V. Description of the invention (9) The difference is very large. Because the light guide property of the light-conducting control thin thin garden sample 36 is very low, the difference between the M and _ levels is large. The amount of light in some desired light layers is less than the amount of light from Fu to other parts. Therefore, it can prevent the "supply phenomenon" caused by irregular reflection of light due to class differences, so it can indeed form the same. Section 6 is a cross-sectional view illustrating another embodiment of the present invention using the method for forming a half-color type vivid light sheet. With reference to the sixth awakening, when a pattern is formed on the semiconductor substrate where the finger-level difference is formed, for example, an insulating film 25 and an anti-reflection layer 50 of an anti-reflection material are plated on the surface to be formed. The photosensitive layer 22 is plated, and then the photosensitive layer pattern 22 is exposed and developed by using a conventional half-color phase-shifting light army to form a desired pattern of the photosensitive layer circle. If the anti-reflection layer 50 is formed, a circle-like pattern can be reliably formed. The anti-reflection layer 50 is formed of a material having a low reflectance, such as a polymer, an oxide film, a halide film, a sulfide film, or light. Etching resistance. According to the present invention, by selectively forming a light-guiding control film on a half-color phase-shifted light army, or when an anti-reflection layer is formed on a sheet layer where class differences are formed, a photosensitive film is applied. In order to prevent the "leaf supply phenomenon" caused by the irregular reflection of light, it is indeed possible to form a small sink sample. The present invention is not limited to the above-mentioned embodiments, and it can be clearly understood that any fine Those skilled in the art can make the garden and spirit of the present invention. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -ϋ- ^^^ 1 nn I nn '·-Γ (Please first Read the notes on the reverse side and fill out this page) --Order '^ · -12-A7 B7 V. Description of Invention (10) Many changes. Component number comparison table 10 Glass substrate 12 Phase shift light single 20 Semiconducting substrate 22 Photosensitive surface 24 Hibiscus 26 Insulating film 30 Glass substrate 32 Half-color phase shift light army 36 Light guide control error 38 The first photosensitive calendar sample 40 The second photosensitive layer circle sample 50 Anti-reflection layer (please read the precautions on the back before filling this page)-Order the printing policy of the staff consumer cooperative of the Central Standards Bureau of the Ministry of Economy Standard (CNS) A4 specification (210X297 mm) _ 1 〇 ^ 13

Claims (1)

年year 經濟部中央棣準局工消费合作社印¾ 第85113265號專利再審査案申請專利範園修正本 修正日期：88年11月 i· 一種於照射一微電子晶圓用之相移光罩，該晶圓具 有第一及第二晶圓區，其中該第一晶圓區相對於該 第二晶圓區，具有一大階級差異’該相移光罩包括有： 一導光之基底； 一於該基底上之相移材料的圈樣層，其中該相 移層係將由該基底傳導之光線改變一相位；及 用來控制通過該相移光革之透光率的裝里，使 得通過一第一光革區的透光率較相對於通過一 -第二 光罩區的透光率為V小，其中該第一光罩區係對應於 該第一晶圓區而該第二光革區係對應於該第二晶圓 區β 2. 如申請專利範圍第1項之相移光罩，其中該透光率 控制裝置包含一於該第一光罩區上之透光率控制材 料層。 3. 如申請專利範圍第2項之相移光罩，其中該透光率 控制材料係選自由Cr、Al、An、Pt、光阻姓刻制、spin on glass(SOG)、CrO、CrON、MoSix、MoSiO、MoSiON、 W及WSix所構成之組群中。 4. 如申請專利範圍第2項之相移光革，其中該透光率 控制材料層包含一於該第一光革區但非該第二光革 區中，於部分該圖樣相移層上之該透光率控制材料 請先IW讀背面之：皮1項再^^本131 .裝· 訂 線 本紙張尺度逋用中國國家橾準（CNS > A4規格（210X297公釐） -14- 年Printed by the Ministry of Economic Affairs and the Central Bureau of Standards, Industrial and Consumer Cooperatives ¾ Patent No. 85113265 for re-examination of the patent application. The amendment date: November 88 i. A phase-shifting mask used to illuminate a microelectronic wafer. The circle has first and second wafer regions, wherein the first wafer region has a large class difference with respect to the second wafer region. The phase shift mask includes: a light-guiding substrate; A loop-like layer of phase-shifting material on a substrate, wherein the phase-shifting layer changes a phase by the light transmitted by the substrate; and a package for controlling the transmittance of light through the phase-shifting light leather so as to pass a first The light transmittance of the light leather region is smaller than the light transmittance V through a second photomask region, where the first light mask region corresponds to the first wafer region and the second light leather region Corresponding to the second wafer region β 2. The phase shift mask according to item 1 of the patent application scope, wherein the light transmittance control device includes a light transmittance control material layer on the first light mask region. 3. For example, the phase-shifting photomask of item 2 of the application, wherein the light transmittance control material is selected from the group consisting of Cr, Al, An, Pt, photoresist, engraved on spin on glass (SOG), CrO, CrON, MoSix, MoSiO, MoSiON, W and WSix. 4. For the phase-shifting light leather as described in the second item of the patent application, wherein the light transmittance control material layer is included in the first light-leather area but not the second light-leather area, on part of the pattern phase-shifting layer For the light transmittance control material, please read IW on the back: 1 item on the back, then ^^ 131. Binding, binding, paper size, China standard (CNS > A4 size (210X297mm) -14- year 經濟部中央棣準局工消费合作社印¾ 第85113265號專利再審査案申請專利範園修正本 修正日期：88年11月 i· 一種於照射一微電子晶圓用之相移光罩，該晶圓具 有第一及第二晶圓區，其中該第一晶圓區相對於該 第二晶圓區，具有一大階級差異’該相移光罩包括有： 一導光之基底； 一於該基底上之相移材料的圈樣層，其中該相 移層係將由該基底傳導之光線改變一相位；及 用來控制通過該相移光革之透光率的裝里，使 得通過一第一光革區的透光率較相對於通過一 -第二 光罩區的透光率為V小，其中該第一光罩區係對應於 該第一晶圓區而該第二光革區係對應於該第二晶圓 區β 2. 如申請專利範圍第1項之相移光罩，其中該透光率 控制裝置包含一於該第一光罩區上之透光率控制材 料層。 3. 如申請專利範圍第2項之相移光罩，其中該透光率 控制材料係選自由Cr、Al、An、Pt、光阻姓刻制、spin on glass(SOG)、CrO、CrON、MoSix、MoSiO、MoSiON、 W及WSix所構成之組群中。 4. 如申請專利範圍第2項之相移光革，其中該透光率 控制材料層包含一於該第一光革區但非該第二光革 區中，於部分該圖樣相移層上之該透光率控制材料 請先IW讀背面之：皮1項再^^本131 .裝· 訂 線 本紙張尺度逋用中國國家橾準（CNS > A4規格（210X297公釐） -14- A8 B8 C8 D8 申請專利範園 的明樣層。 I I feu 頁 5* 一種形成一用於在一微電子晶圓上定圈樣之相移光 罩的方法，該晶圓具有第一及第二晶圓區，其中該 第一晶圓區相對於該第二晶圓區，具有一大階級差 異，該方法係包含下列步驟： 於一導光之基底上形成一相移材料層； 於該相移材料層上形成一控制透光率之材料 層； 使用一第一光罩層將該相移層與該透光率控制 層定圖樣；及 訂 自一該光罩對應於該第二晶圓區之區_移除部 分該透光率控制層。 6·如申請專利範圍第5項之方法，其中該移除步驟包 含下列步驟： 線 形成一選擇性地曝光該光罩對應於該第二晶圓 區之區域的光罩層；及 經濟部4-央橾準局貝工消費合作社印*. 蝕刻部分於該光罩之該曝光區域上的透光率控 制層。 7. 如申請專利範团第5項之方法，其中該透光率控制 層減低了導光量。 8. 如申請專利範面第7項之方法，其中該透光率控制 層係由一選自由Cr、Ab Au、Pt、光阻蝕刻劑、spin on glass(SOG)、CrO、CrON、MoSix、MoSiO、MoSiON、 W及WSix所構成之組群中的材料所形成。 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公嫠） -15· Α8 Β8 C8 D8 經濟部中央梯率扃貝工消費合作杜印«. 、申請專利範囷 9. 一種形成一相移光罩的方法，該方法包含下列步驟： 於一導光之基底上形成一相移材料層； 於該相移材料層上形成一控制透光率之材料 層；及 使用一第一光革層將該相移層與該透光率控制 ....·.................... ......................... ................ ... .... 層定圖樣。 10·如申請專利範团第9項之方法，其進一步包含下列 步驟： 使用一**第二光罩選擇性地移除部分該透光率控 制層。 11·如申請專利範圍第10項之方法，其中該移除步驟包 含下列步驟： 形成一選擇性地曝光該光罩對應於該第二晶圓 區之區域的光革層；及 蝕刻部分於該光罩之該曝光區域上的透光率控 制層。 12·如申請專利範圍第9項之方法，其中該透光率控制 層減低了導光量。 13. 如申請專利範面第12項之方法，其中該透光率控制 層係由一選自由Cr、Al、Au、Pt、光阻蝕刻劑、spin on glass(SOG)'CrO、CrON、MoSix、MoSiO、MoSiON、 W及WSix所構成之組群中的材料所形成。 14. 一種相移光革，其包括有： 一導光之基底； 請先《讀背面之注f項再 .嚷· 订 線 本紙張尺度逍用中國國家揉準（CNS ) Α4規格（210X297公釐） -16- 386179 έ! C8 -_________ 六、申請專利範園 一於該基底上之相移材料的圖樣層，及 一控制於該相移材料層上之透光率之材料的田 樣層。 15·如申請專利範圍第14項之相移光革，其中該圚樣的 相移層係覆蓋該光罩之第一及第二區，且其中該透 ---------------------------------------- 光率控制材料層係僅復蓋該光罩之第一區。 16.如申請專利範圍第14項之相移光罩，其中該透光率 控制層減低了導光量。 17·如申請專利範圍第16項之相移光罩，其中該透光率 控制層包含一選自由Cr、Al、Au、Pt、光阻姓刻劑、 spin on glass(SOG)、CrO ' CrON、MoSix、MoSiO、 MoSiON、W及WSix所構成之組群中的材料。 18. —種形成一用於在一微電子晶圓上定圖樣之相移光 罩的方法，該晶圓具有第一及第二晶圓區，其中該 第一晶圓區相，於該第二晶圓區，具有一大階級差 異，該方法係包含下列步驟： 於一導光之基底上形成一相移材料層；及 於該相移材料層上形成一控制透光率之材料的 層，該層係形成於一對應於該第一晶圓區之該光罩 的第一區，而非一對應於該第二晶圓區之該光單的 第二區。 -17- 本紙張尺度逋用中國國家#準（匚阳）八4规格（210乂297公釐）Printed by the Ministry of Economic Affairs and the Central Bureau of Standards, Industrial and Consumer Cooperatives ¾ Patent No. 85113265 for re-examination of the patent application. The amendment date: November 88 i. A phase-shifting mask used to illuminate a microelectronic wafer. The circle has first and second wafer regions, wherein the first wafer region has a large class difference with respect to the second wafer region. The phase shift mask includes: a light-guiding substrate; A loop-like layer of phase-shifting material on a substrate, wherein the phase-shifting layer changes a phase by the light transmitted by the substrate; and a package for controlling the transmittance of light through the phase-shifting light leather so as to pass a first The light transmittance of the light leather region is smaller than the light transmittance V through a second photomask region, where the first light mask region corresponds to the first wafer region and the second light leather region Corresponding to the second wafer region β 2. The phase shift mask according to item 1 of the patent application scope, wherein the light transmittance control device includes a light transmittance control material layer on the first light mask region. 3. For example, the phase-shifting photomask of item 2 of the application, wherein the light transmittance control material is selected from the group consisting of Cr, Al, An, Pt, photoresist, engraved on spin on glass (SOG), CrO, CrON, MoSix, MoSiO, MoSiON, W and WSix. 4. For the phase-shifting light leather as described in the second item of the patent application, wherein the light transmittance control material layer is included in the first light-leather area but not the second light-leather area, on part of the pattern phase-shifting layer For the light transmittance control material, please read IW on the back: 1 item on the back, then ^^ 131. Binding, binding, paper size, China standard (CNS > A4 size (210X297mm) -14- A8 B8 C8 D8 Bright sample layer for patent application park. II feu Page 5 * A method for forming a phase shift mask for fixed circle samples on a microelectronic wafer, the wafer having first and second A wafer region, in which the first wafer region has a large class difference with respect to the second wafer region. The method includes the following steps: forming a phase shift material layer on a light-guiding substrate; and in the phase Forming a material layer for controlling light transmittance on the shift material layer; using a first photomask layer to pattern the phase shift layer and the light transmittance control layer; and ordering a photomask corresponding to the second wafer Area of the area_Remove part of the light transmittance control layer. The removing step includes the following steps: forming a photomask layer selectively exposing the area of the photomask corresponding to the second wafer region; and 4-printed by the Ministry of Economic Affairs of the Central Bureau of Quasi-Beige Consumer Cooperatives *. Etching Part of the light transmittance control layer on the exposed area of the photomask. 7. The method of item 5 of the patent application group, wherein the light transmittance control layer reduces the light guide amount. The method according to item 7, wherein the light transmittance control layer is selected from the group consisting of Cr, Ab Au, Pt, photoresist etchant, spin on glass (SOG), CrO, CrON, MoSix, MoSiO, MoSiON, W, and WSix. Formed by the materials in the group. This paper size is applicable to China National Standards (CNS) A4 (210X297) 嫠 -15 · Α8 Β8 C8 D8 Central Slope of the Ministry of Economic Affairs, Cooperating with DuPont «. 、 Patent application 囷 9. A method of forming a phase-shifting photomask, the method includes the following steps: forming a phase-shifting material layer on a light-guiding substrate; and forming a light-transmitting layer on the phase-shifting material layer A material layer; and a phase shift layer using a first light leather layer The light transmittance control ............................... ................. .... Layered drawing. 10. If the method of item 9 of the patent application group, it further includes the following steps : Using a second photomask to selectively remove a portion of the light transmittance control layer. 11. The method of claim 10, wherein the removing step includes the following steps: forming a selective exposure to the A photo-leather layer in a region of the photomask corresponding to the second wafer region; and a light transmittance control layer etched on the exposed region of the photomask. 12. The method according to item 9 of the scope of patent application, wherein the light transmittance control layer reduces the amount of light guide. 13. The method according to item 12 of the patent application, wherein the light transmittance control layer is selected from a group consisting of Cr, Al, Au, Pt, photoresist etchant, spin on glass (SOG) 'CrO, CrON, MoSix , MoSiO, MoSiON, W, and WSix. 14. A phase-shifting light leather, which includes: a light-guiding substrate; please read "Note f on the back side first." · Threading This paper size is in accordance with China National Standard (CNS) Α4 (210X297) (Central) -16- 386179 8! C8 -_________ 6. Apply for a patent Fan Yuan-a pattern layer of the phase shift material on the substrate, and a field sample layer of the material that controls the light transmittance on the phase shift material layer . 15. If the phase-shifting light leather of item 14 of the patent application scope, wherein the sample-like phase-shifting layer covers the first and second areas of the photomask, and wherein the transparent ---------- ------------------------------ The photometric control material layer only covers the first area of the photomask. 16. The phase shift mask according to item 14 of the application, wherein the light transmittance control layer reduces the amount of light guide. 17. The phase-shifting photomask according to item 16 of the patent application, wherein the light transmittance control layer comprises a material selected from the group consisting of Cr, Al, Au, Pt, photoresist engraving agent, spin on glass (SOG), CrO 'CrON , MoSix, MoSiO, MoSiON, W, and WSix. 18. A method of forming a phase-shifting mask for patterning on a microelectronic wafer, the wafer having first and second wafer regions, wherein the first wafer region is opposite the first wafer region The two-wafer region has a large class difference. The method includes the following steps: forming a phase-shifting material layer on a light-guiding substrate; and forming a layer of a material that controls light transmittance on the phase-shifting material layer The layer is formed in a first region of the photomask corresponding to the first wafer region, rather than a second region of the light sheet corresponding to the second wafer region. -17- This paper uses China National Standard # 准 (匚 阳) 8-4 (210 乂 297mm)
TW085113265A 1995-05-12 1996-10-30 Method for forming pattern in semiconductor device, mask used in method and method for manufacturing mask TW386179B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950011761A KR100393202B1 (en) 1995-05-12 1995-05-12 Mask used for forming pattern and manufacturing method thereof

Publications (1)

Publication Number Publication Date
TW386179B true TW386179B (en) 2000-04-01

Family

ID=19414332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113265A TW386179B (en) 1995-05-12 1996-10-30 Method for forming pattern in semiconductor device, mask used in method and method for manufacturing mask

Country Status (2)

Country Link
KR (1) KR100393202B1 (en)
TW (1) TW386179B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102187796B1 (en) 2019-08-14 2020-12-07 성주용 Lowest cost device for collecting refuse with minimum composition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950001750B1 (en) * 1992-03-13 1995-02-28 Samsung Electronics Co Ltd Phase shift mask and manufacturing method thereof
KR950009285B1 (en) * 1992-07-20 1995-08-18 금성일렉트론주식회사 Metalizing method of semiconductor device
KR960015789B1 (en) * 1993-06-22 1996-11-21 Hyundai Electronics Ind Fabricating method of semiconductor device

Also Published As

Publication number Publication date
KR100393202B1 (en) 2003-10-10
KR960042944A (en) 1996-12-21

Similar Documents

Publication Publication Date Title
KR940002733B1 (en) Mask for exposure of light and manufacturing method thereof
US5208125A (en) Phase shifting reticle fabrication using ion implantation
JP3751051B2 (en) I-line stepper lithography for phase shift mask patterning
US5881125A (en) Attenuated phase-shifted reticle using sub-resolution pattern
US5460908A (en) Phase shifting retical fabrication method
CN101408725A (en) Method for manufacturing grey mask, grey mask and pattern transfer print method
US5695896A (en) Process for fabricating a phase shifting mask
US5618643A (en) Embedded phase shifting mask with improved relative attenuated film transmission
JP2001272764A (en) Photomask for projection exposure and for projection exposure method using the photomask
JP6573591B2 (en) Photomask manufacturing method, photomask, and display device manufacturing method
US6251564B1 (en) Method for forming a pattern with both logic-type and memory-type circuit
KR20020009410A (en) A ternary photomask and method of making the same
US6162568A (en) Process for forming features on a semiconductor wafer using a phase shifting mask that can be used with two different wavelengths of light
JP2003524201A (en) Novel chromeless alternating reticle for manufacturing semiconductor device morphology
JP2009205146A (en) Photomask defect correction method, photomask manufacturing method, phase shift mask manufacturing method, photomask, phase shift mask, photomask set, and pattern transfer method
JPH02211450A (en) Phase shift mask and its manufacture
TW386179B (en) Method for forming pattern in semiconductor device, mask used in method and method for manufacturing mask
CN210835580U (en) Photomask plate
JP3625592B2 (en) Method for manufacturing phase reversal mask
JPH08106151A (en) Phase shift mask and its production
JP2020122988A (en) Photomask and manufacturing method of display device
US6716558B1 (en) Transparent phase shift mask for fabrication of small feature sizes
US6383689B1 (en) Attenuated phase-shift mask and method of manufacturing the same
US5976732A (en) Photomask for reconfiguring a circuit by exposure at two different wavelengths
KR100455384B1 (en) Wave guided alternating phase shift mask and fabrication method thereof

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees