CN103777462A - Photomask used for display device manufacturing, and pattern transfer printing method - Google Patents

Photomask used for display device manufacturing, and pattern transfer printing method Download PDF

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Publication number
CN103777462A
CN103777462A CN201310512860.9A CN201310512860A CN103777462A CN 103777462 A CN103777462 A CN 103777462A CN 201310512860 A CN201310512860 A CN 201310512860A CN 103777462 A CN103777462 A CN 103777462A
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China
Prior art keywords
pattern
photomask
exposure
master pattern
light
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Granted
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CN201310512860.9A
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Chinese (zh)
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CN103777462B (en
Inventor
今敷修久
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Abstract

The invention provides a photomask used for display device manufacturing, and pattern transfer printing method. In the photomask which is used for display device manufacturing and is provided with patterns used for transfer printing, the patterns for transfer printing comprise a main pattern, and an auxiliary pattern. The main pattern is formed by a light transmitting portion, and diameter is lower than 4 [mu]m. The auxiliary pattern is configured on the periphery of the main pattern, and has width which cannot be distinguished by exposure. The auxiliary pattern is formed by a light transmitting portion. Phase difference does not substantially exist between exposure light transmitting the main pattern and exposure light transmitting the auxiliary pattern. When a distance between the center of the main pattern and the center of the auxiliary pattern is set as P ([mu]m), the distance P is set to make +/-1 order diffraction light generated by light interference enter an optical system of an exposure machine used for exposure, the light interference being generated by exposure light transmitting the main pattern and exposure light transmitting the auxiliary pattern.

Description

Photomask and pattern transfer-printing method for display device manufacture
Technical field
The present invention relates to the photomask of the manufacture that is applicable to display device and use the pattern transfer-printing method of this photomask.
Background technology
In patent documentation 1, record the phase shifting mask with auxiliary patterns as follows, this phase shifting mask with auxiliary patterns has: transparency carrier; Photomask, it is located on this transparency carrier, has the master pattern and the auxiliary patterns that is formed at this master pattern light transmission around of light transmission; And phase shift layer, the above-mentioned auxiliary patterns forming part that it is located at this photomask, makes the phase place of the exposure light by auxiliary patterns carry out displacement.In patent documentation 1, record following content: in the time manufacturing semiconductor device, form in the situation that contact hole etc. do not have repeated isolated patterns and use this phase shifting mask being formed on overlay film on semiconductor substrate, the exposure light passing through shows steep light intensity distributions.
In patent documentation 2, record there is sectional hole patterns, the shadow tone phase shifting mask of auxiliary patterns, half-tone regions and lightproof area.In patent documentation 2, record following content: this shadow tone phase shifting mask is the exposed mask for form pattern on semiconductor wafer, can obtain fully the depth of focus of isolated patterns by this shadow tone phase shifting mask.
Prior art document
Patent documentation 1: Japanese kokai publication hei 6-282064 communique
Patent documentation 2: TOHKEMY 2009-80143 communique
Summary of the invention
The problem that invention will solve
The semiconductor device manufacture that the invention of recording in patent documentation 1 and 2 belongs to is with in the field of photomask, in order to obtain resolution with high NA(Numerical Aperture: numerical aperture) together with the optical system of (for example, more than 0.2), developed the phase shifting mask that utilizes phase shift effect.Phase shifting mask is single wavelength, and uses together with the light source shorter with wavelength (excimer laser of KrF or ArF etc.).Thus, can tackle high integration and follow in the granular of this pattern.
On the other hand, in the field of lithography of display device manufacture use, generally do not apply method as described above and improve resolution and increase the depth of focus.Can enumerate following reason: the integrated level of the pattern in display device and trickle degree do not have field of semiconductor manufacture so high.
In fact, the optical system and the light source that in the exposure machine of display device manufacture use { be generally known to LCD(Liquid Crystal Display: liquid crystal display) exposure device or liquid crystal exposure apparatus etc. }, carry also differ widely with the exposure machine of semiconductor device manufacture use, than resolution and the depth of focus, (for example more pay attention to production efficiency, expand the wavelength coverage of light source and increase light quantity, shorten the production cycle (takt) (production cycle time: time production cycle) etc.).
In addition, use liquid crystal, organic EL(Electro-Luminescence manufacturing: electroluminescence) etc. display device time, implemented multiple conducting films and dielectric film that required pattern forms and formed the elements such as transistor by stacked.In these lit-par-lit structures, mostly utilize following operation: suitably repeat film forming and pattern and form, each stacked film application photo-mask process is carried out to pattern formation with photomask.
For example, thin film transistor (TFT) (the Thin Film Transistor using in liquid crystal indicator for active matrix mode, below be simply denoted as " TFT "), some has following structure: in multiple patterns of formation TFT, the contact hole that is formed at passivation layer (insulation course) runs through insulation course, with the connecting portion conducting that is positioned at its lower layer side.Now, if do not make the pattern of upper layer side and lower layer side locate exactly, and do not form reliably the shape of contact hole, cannot guarantee the correct operation of display device.
As the nearest trend of such display device, with enough responsivenesses, bright and meticulous image are shown and the demand of power consumption reduction is increased day by day.In order to meet such requirement, require structure member and the more and more granular and highly integrated of element of display device.Follow in this also granular more and more of design of the transfer printing that has of the photomask pattern using in these are manufactured.
In the time that increasing fineness of pattern is used in the transfer printing of photomask, the operation that it is transferred to transfer printing body (will carry out the film of etching and processing etc.) exactly becomes difficulty.In transfer printing process, the resolving limit of the actual exposure machine using is set as 3 μ m left and right, but, with in pattern, need CD(Critical Dimension: critical dimension in the needed transfer printing of display device) (live width) approached this limit or the transfer printing pattern lower than the size of this limit.
For example consider following situation: use the photomask with the sectional hole patterns of applying in contact hole etc., this sectional hole patterns is transferred on transfer printing body.In the past, if diameter exceedes the sectional hole patterns of 3 μ m, can not carry out transfer printing so difficultly.But, if the sectional hole patterns below transfer printing 3 μ m, form reliably equably the high-precision transfer printing in hole and be not easy in wanting to realize on transfer printing body.To form still more that to have the hole of the following diameter of 2.5 μ m extremely difficult especially.
Its main reason is the restriction in the performance of the exposure machine that is subject to using in transfer printing.Existing most of LCD exposure machines use the exposure light with the wave band (below also referred to as wide wavelength) that comprises i line, h line, g line, and as mentioned above, resolving limit is 3 μ m left and right.Under this situation, for example in the transfer printing of photomask with in pattern, form diameter is below 2.5 μ m, and then diameter is the sectional hole patterns below 2.0 μ m, difficulty that yes.But, consider in the near future, also expect that transfer printing has the sectional hole patterns lower than the following diameter of 1.5 μ m of this diameter.
In addition, will be fabricated to object with semiconductor device so far and develop directly apply to display device manufacture and have some problems for putting forward high-resolution method, the actuality of carrying out at least in the near future this application is little.For example,, to thering is such high NA(numerical aperture for semiconductor device manufacture) the conversion of exposure machine need huge investment, with the conformability of the price of display device in produce inconsistent.Or, about the change (using the such short wavelength of ArF excimer laser in single wavelength) of exposure wavelength, very difficult to the application with larger area display device, and easily extend and manufacture the production cycle, except these problems in the past, be also inappropriate at the sizable investment this respect of needs.
Therefore, present inventor is not the performance that only depends on exposure machine, and the transfer printing of photomask is studied with pattern, even if worked out thus the pattern lower than 3 μ m, and also can high precision and the method for carrying out reliably transfer printing.
According to inventors' research, consider that following aspect is as one of factor of the pattern of the trickle diameter of transfer printing reliably.
Generally speaking, the transfer printing of photomask base plate is not desirable plane by pattern plane, in addition, and the plane that transfer printing body neither be desirable.And, there is the focusing error percentage of the optical system of exposure machine, therefore might not just in time under focusing state, carry out transfer printing.The area of the photomask of display device manufacture use is varied, generally for example, than the area of the photomask of semiconductor device manufacture use large (, be on one side more than 300mm square).And, transfer printing body (display panel produce with glass etc.) (for example has larger area, be on one side more than 1000mm square), even if therefore exist concavo-convexly on the surface of photomask and transfer printing body, it is very important defocusing less on the impact of transfer printing.The larger photomask of focusing allowance (focus margin) (for the margin of focus error) while, requiring exposure.
The present invention completes in order to solve such problem.
For the means of dealing with problems
In order to solve above-mentioned problem, the present invention has following structure.The present invention is the display device manufacture photomask take structure 1～6 below as feature, and pattern transfer-printing method take structure 7 below as feature.
(structure 1)
Structure 1 of the present invention is display device manufacture photomask, it has by least photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by transmittance section or semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below above 90 degree of 0 degree,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
(structure 2)
Structure 2 of the present invention is display device manufacture photomasks, and it has by the photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, and this display device manufacture is characterised in that with photomask,
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has and cannot, by the width that exposes to differentiate, be made up of transmittance section,
There is not in fact to each other phase differential in the exposure light at auxiliary patterns described in the exposure light of master pattern described in transmission and transmission,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
(structure 3)
Structure 3 of the present invention is that the display device manufacture of recording in structure 2 is used in photomask, it is characterized in that, when the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B/2 and A≤C/2, and the unit of wherein said A, B, C is μ m.
(structure 4)
Structure 4 of the present invention is display device manufacture photomasks, it has by the semi-transparent film and the photomask that are formed on transparency carrier are carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part, transmittance section and semi light transmitting part, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below 90 degree,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
(structure 5)
Structure 5 of the present invention is that the display device manufacture of recording in structure 4 is used in photomask, it is characterized in that, when the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B and A≤C, and the unit of wherein said A, B, C is μ m.
(structure 6)
Structure 6 of the present invention is that the display device manufacture of recording in any one structure in structure 1～5 is used in photomask, it is characterized in that, described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 2 rank do not incide the optical system for the exposure machine of described exposure.
(structure 7)
Structure 7 of the present invention is that the display device manufacture of recording in any one structure in structure 1～5 is used in photomask, it is characterized in that, described auxiliary patterns surrounds described master pattern and forms.
(structure 8)
Structure 8 of the present invention be the display device manufacture recorded in any one structure in structure 1～5 with in photomask, it is characterized in that, when the resolving limit of described exposure machine is B(μ m) time, the scope of described spacing P is 0.7B≤P≤1.3B.
(structure 9)
Structure 9 of the present invention is display device manufacture photomasks, it has by least photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by transmittance section or semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below above 90 degree of 0 degree,
If the distance between the center of the width of the center of described master pattern and described auxiliary patterns is spacing P,
In the light intensity distributions curve of the light intensity distributions forming on transfer printing body at the transmitted light that represents described master pattern, if main peak is Q with the 1st secondary peak-to-peak minimal point nearest apart from described main peak to the distance of main peak center, if when the 2nd submaximum that distance described main peak the 2nd is near and described the 1st secondary peak-to-peak minimal point are R to the distance of main peak center, meet Q≤P≤R, the unit of wherein said P, Q, R is μ m.
(structure 10)
Structure 10 of the present invention is that the display device manufacture of recording in structure 9 is used in photomask, it has by the photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has less than the diameter of master pattern and cannot, by the width that exposes to differentiate, be made up of transmittance section,
There is not in fact to each other phase differential in the exposure light at auxiliary patterns described in the exposure light of master pattern described in transmission and transmission.
(structure 11)
Structure 11 of the present invention is that the display device manufacture of recording in structure 10 is used in photomask, it is characterized in that, when the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B/2 and A≤C/2, and the unit of wherein said A, B, C is μ m.
(structure 12)
Structure 12 of the present invention is that the display device manufacture of recording in structure 9 is used in photomask, it has by the semi-transparent film and the photomask that are formed on transparency carrier are carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part, transmittance section and semi light transmitting part, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, is made up of semi light transmitting part.
(structure 13)
Structure 13 of the present invention is that the display device manufacture of recording in structure 12 is used in photomask, it is characterized in that, when the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B and A≤C, and the unit of wherein said A, B, C is μ m.
(structure 14)
Structure 14 of the present invention is that the display device manufacture of recording in any one structure in structure 9～13 is used in photomask, it is characterized in that,
Be A(μ m) time when establishing the width of described auxiliary patterns, meet Q≤P ± (A/2)≤R.
(structure 15)
Structure 15 of the present invention is that the display device manufacture of recording in any one structure in structure 9～13 is used in photomask, it is characterized in that,
Described auxiliary patterns surrounds described master pattern and forms.
(structure 16)
Structure 16 of the present invention is pattern transfer-printing methods, it is characterized in that, this pattern transfer-printing method uses the display device manufacture photomask of recording in any one structure in structure 1～5,9～13, carries out pattern transfer by display device manufacture with exposure machine on transfer printing body.
The effect of invention
According to photomask of the present invention, in the time that transfer printing photomask being had in order to manufacture display device is carried out transfer printing with pattern, can carry out transfer printing with the condition that has increased focusing enough and to spare amount (with respect to the margin of focusing skew).Therefore, can not be subject to the impact of the flatness of photomask, transfer printing body or the focusing state of exposure optical system, and the pattern of stably transfer printing desired size.
Accompanying drawing explanation
Fig. 1 is a mode of the 1st photomask of the present invention, is (a) schematic diagram that the vertical view of transfer printing pattern is shown, is (b) schematic diagram that the cross section of transfer printing pattern is shown.
Fig. 2 is a mode of the 2nd photomask of the present invention, is (a) schematic diagram that the vertical view of transfer printing pattern is shown, is (b) schematic diagram that the cross section of transfer printing pattern is shown.
Fig. 3 is the schematic diagram that multiple examples of the shape of the master pattern that can apply in the 1st, the 2nd photomask of the present invention and auxiliary patterns are shown.
Fig. 4 is the schematic diagram that a mode of the manufacture method of the 2nd photomask of the present invention is shown with process sequence.
Fig. 5 is the figure illustrating about the optical simulation result of the 1st photomask of the present invention, for (a) evaluation relevant with exposure allowance with relevant evaluation, (b) of focusing allowance, (c) and for reaching the relevant evaluation of the required benchmark exposure Eop of target live width (CD), the result of (d) embodiment 1, (e) reference example 1, (f) comparative example 1 is shown respectively.
Fig. 6 is the figure illustrating about the optical simulation result of the 2nd photomask of the present invention, respectively for (a) evaluation relevant with exposure allowance with relevant evaluation, (b) of focusing allowance, (c) and for reaching the relevant evaluation of the required benchmark exposure Eop of target live width (CD), the result of the comparative example 1 of reference example 1, the Fig. 5 of (d) embodiment 2, Fig. 5 (e) (f) is shown.
Fig. 7 is illustrated in to use when the 1st photomask of the present invention, about the figure of the optical simulation result of the resist pattern form (cross sectional shape) forming on transfer printing body.
Fig. 8 is illustrated in to use when the 2nd photomask of the present invention, about the figure of the optical simulation result of the resist pattern form (cross sectional shape) forming on transfer printing body.
Fig. 9 is the schematic diagram of the expression light intensity distributions curve of the light intensity distributions that illustrates that the exposure light of the master pattern of transmission the present invention the 1st or the 2nd photomask forms on transfer printing body.
Figure 10 is the figure that is shown specifically the light intensity distributions curve of the sectional hole patterns of embodiments of the invention 3.
Figure 11 is the figure that is shown specifically the light intensity distributions curve of the sectional hole patterns of embodiments of the invention 4.
Embodiment
Photomask of the present invention, as the photomask of display device manufacture use, uses existing exposure machine, and can transfer printing in the past can not transfer printing fine pattern, particularly, the margin (enough and to spare amount) of the focusing skew during for exposure is larger.
The photomask of structure 1 of the present invention has by least photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, and this display device manufacture is characterised in that with photomask,
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by transmittance section or semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below above 90 degree of 0 degree,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
, can on transparency carrier, form photomask or photomask and other film.As other film, can be to make to expose the semi-transparent film of a transmission of light.Certainly,, not hindering in the scope of following effect of the present invention, also can there is other film.
In addition, preferably transmittance section is the part that transparency carrier exposes.According to above-mentioned membrane structure, auxiliary patterns can be transmittance section, can be also semi light transmitting part.
Particularly, the 1st photomask of the present invention has by the photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, and this display device manufacture is characterised in that with photomask,
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has and cannot, by the width that exposes to differentiate, be made up of transmittance section,
In transmission the exposure light of described master pattern and transmission the exposure light of described auxiliary patterns there is not in fact to each other phase differential,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
Here, master pattern and auxiliary patterns form by transmittance section.Therefore, master pattern and auxiliary patterns all can be made as to the part that transparency carrier surface is exposed, there is not in fact phase differential in both to each other.
But even if be provided with in any one in master pattern, auxiliary patterns the film with some function, both phase differential also do not exist in fact.Phase differential does not exist in fact and refers to that phase differential is below 30 degree.
The 1st photomask for example can adopt illustrative structure in Fig. 1.
In Fig. 1, the 1st photomask is by carrying out to being formed on photomask 20 on transparency carrier 10 that pattern forms master pattern 31, auxiliary patterns 32 forms.Master pattern 31, auxiliary patterns 32 play a role as transmittance section, and remaining photomask 20 plays a role as light shielding part.
The present invention is useful as following photomask, and this photomask is formed on transfer printing body for the sectional hole patterns below diameter is 4 μ m as master pattern.Resolving limit that it is used exposure machine that the present invention is particularly conducive to diameter is following, particularly diameter is that master pattern below 3 μ m is formed on transfer printing body.And then, be that 2.5 μ m master pattern following or below 2.0 μ m is formed in the situation on transfer printing body by diameter, the effect of invention is more remarkable.Wherein, the diameter of master pattern is preferably more than 1 μ m.
Therefore the transfer printing that, photomask has also has the master pattern of trickle diameter as described above with pattern.That is, the diameter of master pattern is below 4 μ m, preferably, below 3 μ m, is more preferably below 2.5 μ m, further preferably below 2.0 μ m.Wherein, the diameter of master pattern is preferably more than 1 μ m.
According to the present invention, the different master pattern of diameter of the master pattern that the transfer printing that also can have from photomask the photoresist film formation diameter on transfer printing body has with pattern.For example, on, can the photoresist film on transfer printing body, form the master pattern of the diameter that the diameter of the master pattern with the transfer printing pattern having than photomask is little.
In addition, in the photomask shown in Fig. 1, master pattern is square.But the shape of master pattern is not limited to this, can be circle or polygon, be for example positive 2n limit shape (n is more than 2 integer) (with reference to Fig. 3).Here, the diameter of master pattern refers to, its diameter is made as to the diameter of master pattern in the time that master pattern is circle, its length is on one side made as to the diameter of master pattern in the time that master pattern is square, in the time that master pattern is other polygons, the diameter of inscribed circle is made as to the diameter of master pattern.
Auxiliary patterns is configured in the periphery of master pattern.Preferably, auxiliary patterns be surround master pattern surrounding and form.The preferable shape of auxiliary patterns is described in the back.
On the other hand, the width of auxiliary patterns is width less than the diameter of master pattern and that cannot be differentiated by exposure machine.Therefore, the width of auxiliary patterns is preferably below 3 μ m.In addition, the width of auxiliary patterns is preferably more than 0.5 μ m.The width of auxiliary patterns really usual practice as carried out as follows.
First, preferably, when the resolving limit of the exposure machine for described exposure be B(μ m), the diameter of described master pattern is C(μ m) time, the width A(μ of auxiliary patterns m) meets A≤B/2 and A≤C/2.
Particularly, be m) the resolving limit B(μ of the exposure machine size more than m) at the diameter C(μ of master pattern, the resolving limit B(μ that the width A(μ of auxiliary patterns m) is preferably exposure machine m) below 1/2.The width A(μ of auxiliary patterns m) more preferably the resolving limit B(μ of exposure machine m) below 1/3, more preferably B/5≤A≤B/3.
On the other hand, at the diameter C(μ of master pattern m) for the resolving limit B(μ that is less than exposure machine size m), the width A(μ of auxiliary patterns m) be preferably master pattern diameter C(μ m) below 1/2.The width A(μ of auxiliary patterns m) more preferably the diameter C(μ of master pattern m) below 1/3, more preferably C/5≤A≤C/3.
In the time that the width of auxiliary patterns is excessive, there is the risk of being differentiated and being transferred on transfer printing body, easily cause resist loss described later (resist loss).In addition,, in the time that the width of auxiliary patterns is too small, effect described later is insufficient, and is difficult to obtain dimensional accuracy.
The width A(μ of auxiliary patterns is m) preferably more than 0.5 μ m.This be because, in the time that photomask is manufactured describe with the development of photoresist (below photoresist abbreviation being made to resist), etching process in, be not easy to be formed uniformly the pattern with the live width (CD) that is less than 0.5 μ m.
As the example of concrete parameter, in the case of will be the isolated hole of 2 μ m～4 μ m is formed on transfer printing body by diameter, transfer printing m) can be made as to 2 μ m～4 μ m with the diameter C(μ of the master pattern of pattern, the width of auxiliary patterns is made as to the scope of 0.5 μ m～1.5 μ m, spacing P is made as the scope of 3 μ m～5 μ m.The exposure machine now using is the exposure machine that LCD uses.Therefore, the width of auxiliary patterns becomes the size below the resolving limit of exposure machine.Spacing P is described in the back.
Can enumerate following exposure machine as the exposure machine using in the time carrying out transfer printing transfer printing pattern with photomask of the present invention.; this exposure machine be as display device manufacture with (LCD with or FPD(Flat Panel Display: flat-panel monitor) use etc.) and use etc. the exposure machine of the use of doubly exposing; there is following structure: the numerical aperture (NA) of optical system is 0.08～0.10; coherence factor (coherence factor) is (σ) 0.7～0.9, has the light source (also referred to as wide wavelength light source) that comprises i line, h line, g line in exposure light.Particularly, in the time that the numerical aperture NA of optical system is 0.08～0.09 or 0.08～0.095, the effect of invention is remarkable.
In addition, photomask of the present invention is owing to effectively utilizing the diffraction light producing by auxiliary patterns, therefore (for example, 0.85～0.9) particular significant effect in the time that coherence factor is larger.
But, in the exposure of photomask of the present invention, also can use any one single wavelength in i line, h line, g line.In addition, though the present invention use wide wavelength light source also reliably the sectional hole patterns this respect of the trickle diameter of transfer printing be significant.Thus, for example, even if the area of transfer printing body large (, being more than 300mm square etc. on one side) also can expose in the situation that not reducing production efficiency.
The not special restriction of the light source form of applied exposure machine.For example, take the deformation illumination (the oblique incidence illumination that comprises endless belt illumination) as object by the vertical composition cut-off for photomask in the illumination light of light source outgoing, can obtain good transfer printing by application.But, in the present invention, even if do not limit the illumination (mercury lamp etc.) of the general shape (non-distortion) of specific emergent light composition, also can obtain the effect of invention, this point is significant.
The resolving limit of exposure machine refers to, the specification of the optical system having according to exposure machine and the conditions of exposure that comprises used preset light sources, the width of the discernmible minimum of this exposure machine.As one of product specification of each exposure machine, be in most cases disclosed.For example, generally speaking, in the exposure machine with (LCD with or FPD use etc.) as display device manufacture, the resolving limit while using the exposure light source that comprises i line, h line, g line is 3 μ m left and right.
The 1st photomask shown in Fig. 1 is to be carried out pattern formation and form being formed on photomask on transparency carrier by photo-mask process.Dispose foursquare sectional hole patterns as master pattern in centre.The part of master pattern is formed as the transmittance section that transparency carrier exposes.In addition, be provided with the auxiliary patterns of thin width at the periphery of this master pattern, this auxiliary patterns is configured to surround master pattern.Auxiliary patterns is also formed as the transmittance section that transparency carrier exposes.Therefore there is not phase differential in the exposure light of transmission master pattern and auxiliary patterns, to each other.
If the distance between the center of the width of the center of master pattern and auxiliary patterns be spacing P(μ m).This spacing P designs as follows.
; described spacing P is set as; make this photomask being arranged on above-mentioned exposure machine and while having carried out exposure, the diffraction light on produce ± 1 rank of interference of light that produced by the exposure light of auxiliary patterns described in the exposure light of transmission master pattern and transmission incides the optical system for the exposure machine of described exposure.
The diffraction light incident on ± 1 rank refers to ,+1 rank and-1 all incident of rank both sides.Also spacing P can be set as, make the diffraction light larger than ± 1 rank exponent number (for example ± 2 rank diffraction light) incide the optical system of exposure machine.But the diffraction light on ± 1 rank is best for making the effect of increase described later focusing enough and to spare amount, preferably, under the condition of the large not incident of diffraction light in substantially ± 2 rank or rank, exponent number ratio ± 2, design.Preferably ± 1 rank diffraction light incides the optical system of exposure machine, and make this ± and 1 diffraction of light angle, rank is fully large, and utilize significantly the design of its interference effect.The in the situation that of ± 2 rank diffraction light incident, master pattern and auxiliary patterns over-separation, the trend that exists the dynamics of interfering to die down.
In addition, can be also the optical system that zeroth order light incides exposure machine.But, because the increase for focusing enough and to spare amount is (with respect to the variation of focus face, picture deteriorated less) effect play a role be ± more than 1 rank light diffraction light, therefore, preferably, for this diffraction light, the zeroth order light that incides optical system in existence, this zeroth order light intensity is less with respect to ± 1 rank diffraction light.
And, preferably, determine spacing P according to following condition.; in the light intensity distributions curve of the light intensity distributions forming on transfer printing body at the transmitted light that master pattern is shown; when establish main peak and nearest the 1st secondary peak-to-peak minimal point of the described main peak of distance to the distance of main peak center be Q(μ m); if near the 2nd submaximum of distance described main peak the 2nd and described the 1st secondary peak-to-peak minimal point are R(μ m) time to the distance of main peak center, be preferably made as Q≤P≤R.
Fig. 9 is the light intensity distributions curve of the light intensity distributions that illustrates that the exposure light of transmission master pattern forms on transfer printing body.At this, using the highest peak of central authorities as main peak, the submaximum that is located at its symmetria bilateralis and produces near main peak side, be followed successively by the 1st submaximum, the 2nd submaximum ...
If main peak and the 1st secondary peak-to-peak minimal point to the distance of main peak center be Q(μ m), establish the 2nd submaximum and the 1st secondary peak-to-peak minimal point to the distance of main peak center be R(μ m).Now, spacing P(μ m) preferably meets following formula.
Q≤P≤R…（1）
, the center of auxiliary patterns is positioned at and any one position of curves overlapped of chevron that forms the 1st submaximum.In addition, more preferably, can make the width entirety of auxiliary patterns be positioned at the position overlapping with the part of curve of chevron that forms the 1st submaximum., meet following formula.
Q≤P±（A/2）≤R…（2）
A(μ is m) width of auxiliary patterns.
In addition, preferably, when the resolving limit of described exposure machine is B(μ m) time, the scope of spacing P is 0.7B≤P≤1.3B.More preferably, the scope of spacing P is 0.8B≤P≤1.2B.In addition consider from processability this respect, preferably at the light shielding part existing between master pattern and sectional hole patterns more than 0.5 μ m.
The 1st photomask shown in Fig. 1 is following formation: on the transparency carriers such as quartz, form photomask and photomask is carried out to pattern formation, form the transfer printing pattern that comprises light shielding part and transmittance section.Manufacture method can application of known the manufacture method of binary mask.
Here,, except photomask is in fact exposure light to be carried out the situation of film of (optical density (OD) OD is more than 3) of shading, photomask can be also that exposure optical transmission rate is the film below 20%.As photomask, preferably there is the photomask of the above light-proofness in OD3 left and right.In addition, at photomask, to an exposure light transmission part in the situation that, the phase-shift phase of the exposure light that this photomask is had is made as below 90 degree, is more preferably made as below 60 degree.
The material of photomask, except can using Cr or Cr compound (oxide, nitride, carbonide, oxides of nitrogen or the carbon oxynitride etc. of Cr), can also use Ta, Mo, W or their compound (comprising above-mentioned metal silicide) etc.
Here the only exposure light of the exposure machine of use in the time using photomask of the present invention to carry out pattern transfer of exposure.Particularly, exposure light preferably comprises the wave band that comprises i line, h line, g line.Thus, for example, even if the area of transfer printing body large (, being more than 300mm square etc. on one side) also can expose in the situation that not reducing production efficiency.In addition, as mentioned above, also can use individually any one in i line, h line, g line as exposure light.
The exposure light transmission of photomask is the transmissivity of the transparency carrier that is formed with photomask when the exposure light transmission of transparency carrier is made as to 100%, may be defined as the transmissivity for the representative wavelength of the light using in exposure.The representative wavelength of above-mentioned exposure light can be any one in upper i line, h line, g line, for example, can be made as g line.
The phase-shift phase of photomask refers to that the light of transmission transparency carrier and transmission are formed with the phase differential each other of light of the transparency carrier of above-mentioned photomask.If represented with radian, phase-shift phase refers to for " 90 degree are following ", and above-mentioned phase differential is " (2n-1/2) π～(2n+1/2) π (n is integer) ".With above-mentioned same, may be calculated the phase-shift phase for the representative wavelength comprising in exposure light.
Can manufacture the 1st photomask of the present invention by the photomask blank being formed by the transparency carrier that is formed with photomask., the 1st photomask can be made as to the photomask being made up of the transparency carrier with the predetermined photomask that has been formed pattern.Therefore, the transfer printing having at this photomask is with in pattern, and the region beyond master pattern and auxiliary patterns is made up of light shielding part.The 1st photomask of the present invention does not need to have the phase shift film (phase-shift phase for exposure light is essentially the film of 180 degree) of so-called phase reversal effect, and the increase of focusing enough and to spare amount can realize transfer printing time.
It is useful that the 1st photomask of the present invention is used for display device manufacture.Particularly, be for the manufacture of LCD(liquid crystal display) device, organic EL display, PDP(Plasmia indicating panel) etc. photomask.
Transfer printing in such purposes is used in pattern, in most cases needs isolated sectional hole patterns.When master pattern in the 1st photomask of the present invention is isolated sectional hole patterns, the effect of invention is remarkable.Isolated pattern refers to, arrange regularly from the pattern of same shape and the pattern for transfer printing (also referred to as intensive pattern) of the state of mutually interfering in transmitted light each other different, the pattern of the arrangement of the pattern of the such same shape of not all right one-tenth.
The shape of the auxiliary patterns shown in Fig. 1 is 8 limit shape band shapes, but the invention is not restricted to this.The shape of auxiliary patterns is preferably positioned at the periphery as the sectional hole patterns of master pattern, and surrounds the shape of the surrounding of sectional hole patterns.Particularly, preferably, give certain width and the shape that obtains for the shape that is 3 target rotations more than symmetry about the center of sectional hole patterns.In Fig. 3 exemplified with the shape of preferred master pattern and auxiliary patterns.The design of master pattern and the design of auxiliary patterns also can combination with one another Fig. 3 (a)～(f) in different patterns.
For example, the periphery of auxiliary patterns is that the positive 2n limit shape (n is more than 2 integer) such as square, positive 6 limit shapes, positive 8 limit shapes, positive 10 limit shapes or circular situation are preferred mode.And preferably, the shape when periphery of auxiliary patterns is substantially parallel with interior week, has polygon or the circular such shape of band shape of basic fixed width that is.Also this shape is called to polygon banded or circular banded.
Auxiliary patterns can be also the most pattern that is positioned at the periphery of sectional hole patterns and surrounds the surrounding of sectional hole patterns.For example, the shape of auxiliary patterns can be also the shape of the banded or circular banded part disappearance of above-mentioned polygon.For example, shown in Fig. 3 (f), the shape of auxiliary patterns can be also the shape of the bight disappearance of quadrilateral band shape.
In addition, according to present inventor's research, in the illustrated shape of Fig. 3, form the aspect of precision (CD etc.) from being conducive to pattern, preferably (b), (f), in (b), (f), (b) improves effect for focusing enough and to spare amount favourable.
Then, the 2nd photomask of the present invention is described.The 2nd photomask of the present invention has following characteristics.
, the 2nd photomask of the present invention has by the semi-transparent film and the photomask that are formed on transparency carrier are carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part, transmittance section and semi light transmitting part, this display device manufacture is characterised in that with photomask, described transfer printing has with pattern: master pattern, it is made up of transmittance section, and diameter is below 4 μ m, and auxiliary patterns, it is configured in the periphery of described master pattern, there is the width less than the diameter of master pattern, formed by semi light transmitting part, described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below 90 degree, be that spacing P(μ is m) time when establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns, described spacing P is configured to, the diffraction light on produce ± 1 rank of the interference of light producing due to the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission incides the optical system for the exposure machine of described exposure.
The 2nd photomask can adopt example structure as shown in Figure 2.
The 2nd photomask is different in the following areas with respect to the 1st photomask illustrated in fig. 1.That is, in the 1st photomask, auxiliary patterns 32 is formed as the transmittance section that transparency carrier 10 exposes, and on the other hand, in the 2nd photomask, auxiliary patterns 32 ' is formed as the semi light transmitting part of partly transmission exposure light.This semi light transmitting part forms semi-transparent film 40 and forms on transparency carrier 10.
Here, the exposure light transmission of the auxiliary patterns being made up of semi light transmitting part, compared with the exposure light transmission of the auxiliary patterns being made up of transmittance section, approaches the exposure light transmission of the light shielding part that surrounds auxiliary patterns, therefore on transfer printing body, is difficult to be resolved.Therefore, the 2nd photomask is than the 1st photomask, and the design freedom of the width of auxiliary patterns is larger.That is, difference is, than the auxiliary patterns in the 1st photomask, the width of auxiliary patterns can be increased.Pattern when considering high CD precision and forming trickle auxiliary patterns forms difficulty, and this is significant., do not need must be at the resolving limit as so-called exposure machine and below disclosed numerical value for the width of the auxiliary patterns in the 2nd photomask.
The width of the auxiliary patterns of the 2nd photomask can be definite like that as follows.
First, preferably, when the resolving limit of the exposure machine for described exposure be B(μ m), the diameter of described master pattern is C(μ m) time, the width A(μ of auxiliary patterns m) meets A≤B and A≤C.
Particularly, be m) the resolving limit B(μ of the exposure machine size more than m) at the diameter C(μ of master pattern, the resolving limit B(μ that the width A(μ of auxiliary patterns m) is preferably exposure machine m) below.The width A(μ of auxiliary patterns m) more preferably the resolving limit B(μ of exposure machine m) below 1/2, more preferably B/5≤A≤B/2.
On the other hand, be size m) of resolving limit B(μ that is less than exposure machine at the diameter of master pattern, the width A(μ of auxiliary patterns m) be preferably this master pattern diameter C(μ m) below.The width A(μ of auxiliary patterns m) more preferably master pattern diameter C(μ m) below 1/2, more preferably C/5≤A≤C/2.This auxiliary patterns width A(μ m) be preferably 0.5 μ m more than.
Owing to also there is semi light transmitting part in the 2nd photomask except transmittance section, light shielding part, therefore its autofrettage is slightly more complicated than the 1st photomask.The manufacture process of the 2nd photomask shown in Fig. 4.
That is, prepare photomask blank, this photomask blank is on transparency carrier 10, to form successively semi-transparent film 40 and photomask 20, so be formed with resist film 50 and obtain (Fig. 4 (a)).Then, to resist film 50(the 1st resist) implement the 1st to describe.It is developed, the 1st formed resist pattern is carried out to etching photomask 20 as mask, delimit thus light shielding part (Fig. 4 (b)).
Peeling off after the 1st resist pattern (Fig. 4 (c)), again applying from the teeth outwards and form resist film 60(the 2nd resist film) (Fig. 4 (d)), be used to form the 2nd of the 2nd resist pattern and describe.This is undertaken by the data of describing that form transmittance section for the semi-transparent film 40 of etching.Now, the above-mentioned data of describing are processed as follows: around master pattern, the edge of the 2nd resist pattern is retreated a little, expose with the edge that makes photomask 20.Then, after development, using the edge of the 2nd formed resist pattern and light shielding part as mask, double light-transmissive film 40 carries out etching (Fig. 4 (e)), forms transmittance section.Thus, the transmittance section forming is with respect to the position of the light shielding part delimited before, on correct position by autoregistration (self alignment).Below, by as the method for Fig. 4, the method that directly forms semi-transparent film on transparency carrier is called the method for prepaying.
Peeling off after the 2nd resist pattern, completing the 2nd photomask of the present invention (Fig. 4 (f)).
Like this, preferably, in transfer printing, with in pattern, the region except master pattern and auxiliary patterns is made up of light shielding part the 2nd photomask of the present invention.
In addition, as the autofrettage beyond above-mentioned autofrettage, also can apply following methods: on transparency carrier, form photomask and it is carried out to pattern formation, then on whole, form semi-transparent film and carry out pattern formation (paying method after the method is called).But from preventing the viewpoint of the deviation of the alignment of describing for 2 times, advantageous applications is prepay method.
Material for the photomask of the 2nd photomask is same with the 1st photomask, except can using Cr or Cr compound (oxide of Cr, nitride, carbonide, oxides of nitrogen, carbon oxynitride etc.), can also use Ta, Mo, W or their compound (comprising above-mentioned metal silicide) etc.
In addition, except can using Cr compound (oxide, nitride, carbonide, oxides of nitrogen or the carbon oxynitride etc. of Cr), Si compound (SiO2, SOG), metal-silicide compound (TaSi, MoSi, WSi or their nitride, oxides of nitrogen etc.), can also use the Ti compounds such as TiON for the material of the semi-transparent film of the 2nd photomask.
But, prepay method if consider to apply, preferably, semi-transparent film and photomask select to have each other the material of etching selectivity.That is, expect that photomask has patience for the etchant of semi-transparent film, semi-transparent film has patience for the etchant of photomask.
According to this viewpoint, in the material of photomask, select Cr or Cr compound (oxide of Cr, nitride, carbonide, oxides of nitrogen, carbon oxynitride etc.), as the material of semi-transparent film, it is suitable using Si compound (SiO2, SOG), metal-silicide compound (TaSi, MoSi, WSi or their nitride, oxides of nitrogen etc.).Or also can be contrary.
The semi-transparent film using in the 2nd photomask light transmission that preferably exposes is 20～80%.This exposure light transmission is the transparency carrier that the is formed with semi-transparent film transmissivity for the transmitted light of transparency carrier, with in the 1st photomask, illustrate identical, can be made as the transmissivity for the representative wavelength of exposure light.The semi-transparent film using in the 2nd photomask light transmission that more preferably exposes is 30～60%.
In addition, auxiliary patterns is trickle live width, therefore be difficult to measure the exposure light transmission (owing to being subject to the impact of diffraction of light, be therefore subject to from the impact of pattern around according to live width, in fact the light quantity of transmission significantly changes) of this part under the state that has formed pattern.Therefore, as the exposure light transmission of auxiliary patterns, being made as is to have supposed the enough large situations of width that make this auxiliary patterns, and supposition is not subject to the transmissivity in the situation of the state of the impact of pattern around, is the exposure light transmission of transparency carrier is made as to the relative value in 100% situation.The situation of the exposure light transmission of semi-transparent film is also same definition.
In addition, the phase-shift phase with respect to exposure light of the semi-transparent film using in the 2nd photomask is below 90 degree, preferably below 60 degree.Identical with the explanation of carrying out in the 1st photomask about the definition of phase-shift phase.
The 2nd photomask of the present invention uses the so-called phase shifting mask of interference (offseting) effect producing due to the light of inverted phase (phase differential is 180 degree) different from the border at pattern, does not need to use in fact the light of inverted phase.In addition, in the present invention, be the film of 180 degree if the semi-transparent film of auxiliary patterns part is used to phase-shift phase, the angle of diffraction of ± 1 rank diffraction light diminishes.Therefore, there is following trend: the angle of diffraction of ± 1 rank diffraction light is made as enough large, and make on this basis ± 1 rank diffraction light incides the optical system of exposure machine, and the effect of the present invention obtaining thus cannot fully obtain in phase shifting mask.
In addition, about the interference of light effect this point that does not need to use inverted phase, the 1st photomask of the present invention is also same.
Other features of the 2nd photomask are identical with the 1st photomask, omit repeat specification.For example, about the optical characteristics (comprising NA, σ) of the preferred exposure machine using in exposure, exposure light wavelength, with the preferable shape of definite relevant optimum condition (comprising (1) formula, (2) formula), master pattern and the auxiliary patterns of the spacing of auxiliary patterns etc., all applicable in the 1st, the 2nd photomask.
In addition, the present invention also comprises use the 1st photomask or the 2nd photomask, the method by display device manufacture with exposure machine transfer printing transfer printing pattern on transfer printing body.
As mentioned above, the 1st, the 2nd photomask of the present invention has following feature: make to form with cooperating of auxiliary patterns by master pattern ± 1 rank diffraction light incides the optical system of exposure machine.± 1 rank light (even if for example exist on the XY of transfer printing body face concavo-convex, the face that is transferred has carried out position displacement in Z direction) in the precalculated position that is transferred face, phase place equates all the time, interference surface has good focusing enough and to spare amount.Therefore, effectively utilize these 2 light beams and make resist sensitization.
In addition, learn according to present inventor's research: in the 1st, the 2nd photomask of the present invention, except increasing the effect of focusing enough and to spare amount, also there is the enough and to spare amount that increases the variation with respect to exposure easily producing in exposure machine and the effect that reduces the irradiation light quantity needing.
In the 1st higher photomask of the exposure light transmission of auxiliary patterns, large this advantage of focusing enough and to spare quantitative change is remarkable especially.On the other hand, in the 2nd relatively low photomask of the exposure light transmission of auxiliary patterns, except being difficult for being created in the advantage of loss of the resist forming on transfer printing body, in retrofit this point, be also of great importance easily carrying out.
In addition, in the 1st, the 2nd photomask, do not need to have the phase shift film of phase reversal effect, and can obtain the effect that above-mentioned focusing enough and to spare amount increases.
On the other hand, not damaging in the scope of effect of the present invention, also can make to have additional blooming and functional membrane in the structure of above-mentioned the 1st, the 2nd photomask.In addition, also can use on the surface of photomask and possess the antireflection layer etc. that there is reflection and prevent function, the film with the layer structure of expectation.
[embodiment]
(embodiment 1)
The transfer printing when photomask (the 1st photomask of the present invention) that has a pattern of the transfer printing shown in Fig. 1 for use has carried out exposure, carries out optical simulation and evaluates.
The condition of applying in emulation is as follows.
The optical system of exposure machine: numerical aperture (NA): 0.085
Coherence factor (σ): 0.9
Exposure light wavelength (relative intensity of each wavelength) g:h:i=1:0.8:0.95
Master pattern (transmittance section): foursquare sectional hole patterns.Length (diameter C)=2 μ m on one side
Auxiliary patterns (transmittance section): the 8 limit shape band shapes of surrounding master pattern.Width (A)=1 μ m
Light shielding part is formed by the photomask with light-proofness more than OD3.
Spacing P is (d) of 3.0～5.0 μ m(Fig. 5).
Transfer printing in the photomask (Fig. 5 (f)) of comparative example 1 is not with pattern except there is no auxiliary patterns, and other are identical with the photomask of embodiment 1.In addition, the transfer printing pattern in the photomask of reference example 1 (Fig. 5 (e)) is the diameter of the master pattern of the photomask of comparative example 1 to be made as to 2.5 μ m and the pattern that obtains.
< 1-1 focusing enough and to spare amount >
Known operation window (Process window) is as the method for the performance of the photoetching such as the evaluation depth of focus (DOF).Here establishing transverse axis, is that (m), establish the longitudinal axis is exposure (mJ/cm to μ in focal position 2deng), expose and the result of process, using the region of the live width variation of allowing (target live width ± 10% in) as process permissible range.In addition, in process permissible range, establish in benchmark focal position (0 μ m) transfer printing become the exposure as target live width be Eop(benchmark exposure).In process permissible range, using benchmark focal position and benchmark exposure as center, can utilize the rectangle of area maximum to represent focus error tolerance (focusing enough and to spare amount) and exposure error tolerance (exposure enough and to spare amount).Now, rectangular width, for focusing enough and to spare amount, is highly allowed exposure enough and to spare amount.
Therefore, Fig. 5 (a) describes the figure with respect to the value of the focusing enough and to spare amount of certain spacing P according to the value of each spacing P.In addition, Fig. 6 described later (a) is also same figure.
As shown in Fig. 5 (a), known, according to the 1st photomask of the present invention, even if be the arbitrary size in 3 μ m～5 μ m at spacing P, focusing enough and to spare amount is also large than the photomask that there is no auxiliary patterns shown in comparative example 1.Known, the 1st photomask of the present invention is particularly in the time that spacing P is 3 μ m～4 μ m, and focusing enough and to spare amount exceedes 20 μ m, highly beneficial.In addition, known, the 1st photomask of the present invention is in the region of 3 μ m～4 μ m at spacing P, and compared with the reference example 1 larger with the diameter of master pattern, focusing enough and to spare amount is favourable.
< 1-2 exposure enough and to spare amount >
With above-mentioned same, (b) of Fig. 5 is operation window is described the value of the exposure enough and to spare amount (EL enough and to spare amount) with respect to certain spacing P figure according to the value of each spacing P.In addition, Fig. 6 described later (b) is also same figure.
As shown in Fig. 5 (b), known, the result of embodiment 1 is more favourable than comparative example 1 in the region of 4 μ m～5 μ m at spacing P.Therefore, known, in this region, not only larger for the margin of focusing variation, and be also affected hardly for the variation of the irradiation light quantity of exposure machine, the pattern of can transfer printing expecting.
< 1-3 benchmark exposure (Eop) >
In process window, establish in benchmark focal position, (0 μ is m) that the exposure of target live width is Eop by pattern transfer, and (c) of Fig. 5 describes the figure with respect to the value of the Eop of certain spacing P according to the value of each spacing P.The structure of the figure of Fig. 6 described later (c) is also identical.
As shown in Fig. 5 (c), known, compared with the photomask of the photomask of embodiment 1 and comparative example 1, can carry out transfer printing to reduce by approximately 10～20% irradiation light quantity.This point is also the action effect of excellence of the present invention.In addition, at LCD with in exposure machine, in the time that the area that carries out that photomask is had gives necessarily to irradiate the exposure of light quantity, be not that whole face irradiates together, but employing scan exposure, therefore the minimizing of needed irradiation light quantity means shortening of production cycle, in productivity, is significant.
< 1-4 resist patterned section shape >
The cross sectional shape of the resist pattern obtaining while using the 1st photomask of the present invention to expose to the resist film on transfer printing body (positive photoresist) shown in Fig. 7.Resist patterned section shape when it shows benchmark focal position in process window and benchmark exposure (Eop) according to each spacing P.In addition, Fig. 8 described later also illustrates resist patterned section shape with identical index.
As shown in Figure 7, be formed with (diameter 2.0 μ sectional hole patterns m) as predetermined in the position corresponding with master pattern.In addition, produce in the outside of sectional hole patterns the recess (resist loss) causing due to auxiliary patterns, along with spacing P becomes small, the position of this recess is also close to master pattern.Wherein, in the time carrying out the processing of transfer printing body (, the etching and processing of the film of the lower layer side in this resist pattern), can form the pattern needing by the wet etching of common utilization.
(embodiment 2)
The transfer printing when photomask (the 2nd photomask of the present invention) that has a pattern of the transfer printing shown in Fig. 2 for use has carried out exposure, carries out optical simulation and evaluates.
The condition of applying in emulation is as follows.
The optical system of exposure machine: numerical aperture (NA): 0.085
Coherence factor (σ): 0.9
Exposure light wavelength (relative intensity of each wavelength) g:h:i=1:0.8:0.95
Master pattern (transmittance section): foursquare sectional hole patterns.Length (diameter C)=2 μ m on one side
Auxiliary patterns (semi light transmitting part): the 8 limit shape band shapes of surrounding master pattern.Width (A)=1 μ m
Light shielding part is formed by the photomask with light-proofness more than OD3.
The exposure light transmission of the semi-transparent film using in semi light transmitting part is 50%.
Spacing P is (d) of 3.0 μ m～5.0 μ m(Fig. 6).
< 2-1 focusing enough and to spare amount >
As shown in Fig. 6 (a), known, according to embodiments of the invention 2(the 2nd photomask) (Fig. 6 (d)), even if be the arbitrary size in 3 μ m～5 μ m at spacing P, focusing enough and to spare amount is also large than the photomask that there is no auxiliary patterns shown in comparative example 1 (Fig. 5 (e)).Known, the photomask of embodiment 2 is particularly in the time that spacing P is 3.5 μ m～4.5 μ m, and focusing enough and to spare amount exceedes 20 μ m, highly beneficial.
< 2-2 exposure enough and to spare amount >
As shown in Fig. 6 (b), known, the result of the photomask of embodiment 2 is more favourable than the photomask of comparative example 1 in the time that spacing is 4.0 μ m left and right.
< 2-3 irradiates light quantity (Eop) >
About in order to form aimed dia (the irradiation light quantity of the 2 μ needed exposure machine of pattern m) on transfer printing body, as shown in Fig. 6 (c), known, according to the photomask of embodiment 2, than the photomask of comparative example 1, can carry out transfer printing with the irradiation light quantity reducing more than 10%.
< 2-4 resist cross sectional shape >
The cross sectional shape of the resist pattern obtaining while using the 2nd photomask of the present invention to expose to the resist film on transfer printing body (positive corrosion-resisting agent) shown in Fig. 8.Known, be formed with (diameter 2.0 μ sectional hole patterns m) as predetermined in the position corresponding with master pattern.And, the resist loss that does not produce in fact the master pattern periphery causing due to auxiliary patterns.Therefore,, in the processing of transfer printing body, can carry out extremely stable etching.
(embodiment 3)
In order to investigate the relation between light intensity distributions and the spacing P that the exposure light of transmission master pattern forms on transfer printing body, carry out following emulation.
In the time grasping the position of the light intensity distributions shown in Fig. 9 and its submaximum, the condition of applying in emulation is as follows.
The optical system of exposure machine: numerical aperture (NA): 0.085
Coherence factor (σ): 0.9
Exposure light wavelength (relative intensity of each wavelength) g:h:i=1:0.8:0.95
It is the square (identical with above-mentioned comparative example 1) of 2 μ m that master pattern shape is made as to length (diameter C) on one side.In addition, do not use auxiliary patterns here.
In Figure 10, be shown specifically the light intensity distributions curve on transfer printing body of the master pattern (sectional hole patterns) based on embodiment 3.Here, when establish main peak with apart from nearest the 1st secondary peak-to-peak minimal point of main peak to the distance of main peak center be Q(μ m), 2nd submaximum (omit diagram) near apart from main peak the 2nd and the 1st secondary peak-to-peak minimal point be that R(μ is m) time to the distance of main peak center, Q is 3.1 μ m, and R is 5.5 μ m.In addition, the maximal point of the 1st submaximum is 3.9 μ m to the distance of main peak center.
Above-mentioned having shown with the result of the transfer printing based on spacing P shown in Fig. 5 has good consistance., can be clear and definite: by the size of spacing P is made as
Q≤P≤R…（1）
Can obtain the excellent condition favourable to transfer printing.In addition, known according to present inventor's research, when the width entirety of auxiliary patterns and the width of the 1st submaximum are when overlapping, that is, and when meeting
Q≤P±（A/2）≤R…（2）
Time, can obtain more excellent focusing enough and to spare amount.Therefore, known, preferably carry out the design of transfer printing pattern to meet the mode of above-mentioned formula (1) or (2).
(embodiment 4)
Be the square of 3.5 μ m for the shape of master pattern being made as to length (diameter C) on one side in embodiment 3, use the method identical with embodiment 3, obtained the details (Figure 11) of light intensity distributions curve.This embodiment 4 is compared with embodiment 3, and the position of the 1st submaximum is to from peak position, the side away from slightly moves.
Particularly, Q is 3.8 μ m, and R is 6.2 μ m, and the maximal point of the 1st submaximum is 4.4 μ m.
But, known, in this case, satisfied in the situation that, also can obtain larger focusing enough and to spare amount in above-mentioned formula (1) or (2).In addition, exposure enough and to spare amount, Eop have also obtained preferred result.
In addition, the effect of the above-mentioned excellence obtaining about spacing P is made as to above-mentioned scope not only obtains in the 1st photomask, also in the 2nd photomask, obtains.
Above, describe the present invention with reference to multiple embodiment, but the invention is not restricted to above-described embodiment.In structure of the present invention with in detail, in the spirit and scope of the present invention of recording in claims, the various changes that can it will be appreciated by those skilled in the art that.

Claims (16)

1. a display device manufacture photomask, it has by least photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, and this display device manufacture is characterised in that with photomask,
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by transmittance section or semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below above 90 degree of 0 degree,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
2. a display device manufacture photomask, it has by the photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, and this display device manufacture is characterised in that with photomask,
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has and cannot, by the width that exposes to differentiate, be made up of transmittance section,
There is not in fact to each other phase differential in the exposure light at auxiliary patterns described in the exposure light of master pattern described in transmission and transmission,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
3. display device manufacture photomask according to claim 2, is characterized in that,
When the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B/2 and A≤C/2, and the unit of wherein said A, B, C is μ m.
4. a display device manufacture photomask, it has by the semi-transparent film and the photomask that are formed on transparency carrier are carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part, transmittance section and semi light transmitting part, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below 90 degree,
When establishing distance between the center of described master pattern and the center of the width of described auxiliary patterns while being spacing P, the unit of wherein said spacing P is μ m,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 1 rank incides the optical system for the exposure machine of described exposure.
5. display device manufacture photomask according to claim 4, is characterized in that,
When the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B and A≤C, and the unit of wherein said A, B, C is μ m.
6. according to the display device manufacture photomask described in any one in claim 1～5, it is characterized in that,
Described spacing P is configured to, make due to the interference of light between the exposure light of auxiliary patterns described in the exposure light of master pattern described in transmission and transmission produce ± diffraction light on 2 rank do not incide the optical system for the exposure machine of described exposure.
7. according to the display device manufacture photomask described in any one in claim 1～5, it is characterized in that,
Described auxiliary patterns surrounds described master pattern and forms.
8. according to the display device manufacture photomask described in any one in claim 1～5, it is characterized in that,
In the time that the resolving limit of described exposure machine is B, the scope of described spacing P is 0.7B≤P≤1.3B, and the unit of wherein said B is μ m.
9. a display device manufacture photomask, it has by least photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, and this display device manufacture is characterised in that with photomask,
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, formed by transmittance section or semi light transmitting part,
Described in transmission, described in the exposure light of master pattern and transmission, the phase differential between the exposure light of auxiliary patterns is below above 90 degree of 0 degree,
Be spacing P in the distance of establishing between the center of described master pattern and the center of the width of described auxiliary patterns,
In the light intensity distributions curve of the light intensity distributions forming on transfer printing body at the transmitted light that represents described master pattern, if main peak is Q with the 1st secondary peak-to-peak minimal point nearest apart from described main peak to the distance of main peak center, if when the 2nd submaximum that distance described main peak the 2nd is near and described the 1st secondary peak-to-peak minimal point are R to the distance of main peak center
Meet Q≤P≤R, the unit of wherein said P, Q, R is μ m.
10. display device manufacture photomask according to claim 9, it has by the photomask being formed on transparency carrier is carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part and transmittance section, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has less than the diameter of master pattern and cannot, by the width that exposes to differentiate, be made up of transmittance section,
There is not in fact to each other phase differential in the exposure light at auxiliary patterns described in the exposure light of master pattern described in transmission and transmission.
11. display device manufacture photomasks according to claim 10, is characterized in that,
When the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B/2 and A≤C/2, and the unit of wherein said A, B, C is μ m.
12. display device manufacture photomasks according to claim 9, it has by the semi-transparent film and the photomask that are formed on transparency carrier are carried out to transfer printing pattern that pattern formation forms, that comprise light shielding part, transmittance section and semi light transmitting part, this display device manufacture is characterised in that with photomask
Described transfer printing has with pattern:
Master pattern, it is made up of transmittance section, and diameter is below 4 μ m; And
Auxiliary patterns, the periphery that it is configured in described master pattern, has the width less than the diameter of master pattern, is made up of semi light transmitting part.
13. display device manufacture photomasks according to claim 12, is characterized in that,
When the resolving limit of the exposure machine for described exposure is B, when the diameter of described master pattern is C, the width A of described auxiliary patterns meets A≤B and A≤C, and the unit of wherein said A, B, C is μ m.
14. according to the display device manufacture photomask described in any one in claim 9～13, it is characterized in that,
In the time establishing the width of described auxiliary patterns and be A, meet Q≤P ± (A/2)≤R, the unit of wherein said A is μ m.
15. according to the display device manufacture photomask described in any one in claim 9～13, it is characterized in that,
Described auxiliary patterns surrounds described master pattern and forms.
16. 1 kinds of pattern transfer-printing methods, is characterized in that,
This pattern transfer-printing method right to use requires the display device manufacture photomask described in any one in 1～5,9～13, carries out pattern transfer by display device manufacture with exposure machine on transfer printing body.
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