CN110297388B - Photomask, method for manufacturing photomask, and method for manufacturing electronic device - Google Patents
Photomask, method for manufacturing photomask, and method for manufacturing electronic device Download PDFInfo
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- CN110297388B CN110297388B CN201910211305.XA CN201910211305A CN110297388B CN 110297388 B CN110297388 B CN 110297388B CN 201910211305 A CN201910211305 A CN 201910211305A CN 110297388 B CN110297388 B CN 110297388B
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- photomask
- pattern
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photomask, a method for manufacturing the same, a photomask blank, and a method for manufacturing an electronic device, which can prevent electrostatic damage. A photomask (10) is provided with: a transfer pattern (35) formed by patterning an optical film on a main surface of the transparent substrate (21); and a light-transmitting annular portion (33) surrounding the outer periphery of the pattern (35) for transfer; and an outer peripheral region (31) surrounding the outer periphery of the light-transmitting annular portion (33). In the outer peripheral region (31), a transparent conductive film (25) is formed on the transparent substrate (21), and a mark pattern formed by patterning the optical film is formed on the transparent conductive film (25).
Description
Technical Field
The present invention relates to a photomask, a method of manufacturing the photomask, and a method of manufacturing an electronic device.
Background
Photolithography is used in the manufacture of electronic devices such as flat panel displays and semiconductor integrated circuits. In the photolithography technique applied to the manufacture of these electronic devices, a photomask having a transfer pattern formed by patterning an optical film such as a light shielding film on one main surface of a transparent substrate is used.
In a process of manufacturing a photomask or a process of using a photomask, a part of the photomask may be electrostatically charged due to contact of the photomask with other equipment or the like or influence of external electromagnetic waves or the like. If a potential difference due to static electricity is generated between a plurality of isolated portions with a small interval therebetween in the pattern for transfer, discharge may occur to break the pattern, which may be a defect.
In order to solve the problem that defects occur in a pattern due to an impact at the time of discharge caused by electrification of a photomask, there has been proposed a photomask blank having an antistatic film having light transmittance and conductivity formed on a photomask substrate and a light shielding film provided thereon, and a photomask after patterning the photomask blank (patent document 1). A photomask substrate in which a transparent conductive film is provided on a light shielding film formation surface of a glass substrate with an antireflection film interposed therebetween has been proposed (patent document 2).
Patent document 1: japanese patent laid-open No. 2014-81449
Patent document 2: japanese patent laid-open publication No. 2014-134667
Disclosure of Invention
When pattern transfer is performed using the photomask of patent document 1 with an exposure apparatus, the transmittance of exposure light is reduced by the antistatic film. Therefore, there are the following problems: in order to obtain the amount of light required for transfer, the time required for exposure becomes long, and throughput decreases.
In the photomask of patent document 2, the problem of the transmittance decrease in patent document 1 can be reduced by forming the transparent conductive film through the antireflection film. However, when the antireflection film and the transparent conductive film are formed on the entire surface of the transparent substrate, the occurrence of in-plane deviation in the film thickness or film quality of each of the antireflection film and the transparent conductive film cannot be completely prevented, and thus there is a problem that in-plane uniformity of optical characteristics cannot be ensured. If the optical characteristics are deviated in plane, the pattern cannot be transferred accurately. In particular, since various sizes of photomasks for flat panel displays exist, including photomasks having a large area, it is difficult to eliminate in-plane variations in film thickness in a film forming apparatus.
An object of one aspect of the present invention is to provide a photomask or the like that prevents the generation of electrostatic damage.
(mode 1)
Mode 1 of the present invention is a photomask,
which has, on a main surface of a transparent substrate:
a transfer pattern formed by patterning the optical film;
a light-transmitting annular portion surrounding an outer periphery of the pattern for transfer; and
an outer peripheral region surrounding an outer periphery of the light-transmitting annular portion,
in the outer peripheral region, a transparent conductive film and a mark pattern formed by patterning the optical film are laminated on the main surface.
(mode 2)
A 2 nd aspect of the present invention is the photomask according to the 1 st aspect, wherein,
in the peripheral region, the transparent conductive film is formed between the transparent substrate and the optical film.
(mode 3)
A 3 rd aspect of the present invention is the photomask according to the 1 st aspect, wherein,
in the peripheral region, the optical film is formed between the transparent substrate and the transparent conductive film.
(mode 4)
The 4 th aspect of the present invention is the photomask according to any of the 1 st to 3 rd aspects, wherein,
the optical film includes a light shielding film.
(mode 5)
The 5 th aspect of the present invention is the photomask according to any of the 1 st to 4 th aspects, wherein,
the outer edge of the transfer pattern is surrounded by a light shielding annular portion which is electrically connected to the transfer pattern and is constituted by forming the optical film on the main surface.
(mode 6)
A 6 th aspect of the present invention is the photomask according to the 5 th aspect, wherein,
the light shielding annular portion has an outer edge parallel to an inner edge of the outer peripheral region.
(mode 7)
The 7 th aspect of the present invention is the photomask according to any of the 1 st to 6 th aspects, wherein,
the light-transmitting annular portion has a portion where the surface of the transparent substrate is exposed over the entire circumference, and the width of the portion where the surface of the transparent substrate is exposed is 1 mm or more.
(mode 8)
An 8 th aspect of the present invention is the photomask according to any of the 1 st to 7 th aspects, wherein,
the mark pattern is an alignment mark used at the time of exposure of the photomask.
(mode 9)
Mode 9 of the present invention is a photomask blank,
which has a transfer region for forming a pattern for transfer and an outer peripheral region surrounding the transfer region on the outer peripheral side of the transfer region on a transparent substrate,
the transfer region is formed by exposing the transparent substrate,
in the outer peripheral region, a transparent conductive film is formed on the transparent substrate.
(mode 10)
In accordance with a 10 th aspect of the present invention, there is provided a photomask blank having a transfer region for forming a pattern for transfer on a transparent substrate and an outer peripheral region surrounding the transfer region on an outer peripheral side of the transfer region,
in the transfer region, an optical film for use as the pattern for transfer is formed on the transparent substrate,
in the outer peripheral region, a transparent conductive film and the optical film are laminated on the transparent substrate.
(mode 11)
An 11 th aspect of the present invention is a method for manufacturing a photomask, comprising:
a step of preparing a photomask blank, the photomask blank being formed as follows: a transparent substrate having a transfer region for forming a pattern for transfer and an outer peripheral region surrounding an outer periphery of the transfer region, the transfer region having an optical film formed on the transparent substrate, the outer peripheral region having a transparent conductive film and the optical film laminated on the transparent substrate; and
a patterning step of patterning only the optical film,
in the patterning step, the transfer pattern is formed, a mark pattern is formed on the outer peripheral region, and a light-transmitting annular portion having a portion where the transparent substrate is exposed to a predetermined width is formed between the transfer pattern and the outer peripheral region.
(mode 12)
A 12 th aspect of the present invention is a method for manufacturing a photomask, comprising:
a step of preparing a photomask blank having a transfer region for forming a pattern for transfer and an outer peripheral region surrounding the outer periphery of the transfer region on a transparent substrate, the transfer region and the outer peripheral region having a laminated film of a transparent conductive film and an optical film formed on the transparent substrate;
a patterning step of forming the transfer pattern in the transfer region, forming a mark pattern in the outer peripheral region, and forming a light-transmitting annular portion having a portion where the transparent substrate is exposed to a predetermined width between the transfer pattern and the outer peripheral region by patterning only the optical film; and
and a removal step of removing the transparent conductive film exposed in the transfer region in the patterning step.
(mode 13)
A 13 th aspect of the present invention is a method for manufacturing a photomask, comprising:
a step of preparing a photomask intermediate having, on a transparent substrate: a transfer pattern formed by patterning the optical film; an outer peripheral region surrounding the outer periphery of the transfer pattern and having a mark pattern; and a light-transmitting annular portion having a portion where the transparent substrate having a predetermined width is exposed between the transfer pattern and the outer peripheral region; and
and a step of laminating a transparent conductive film on the outer peripheral region.
(mode 14)
A 14 th aspect of the present invention is a method for manufacturing an electronic device, comprising:
a step of preparing a photomask according to any one of the above-described modes 1 to 8; and
and transferring the transfer pattern to a transfer object using an exposure device.
According to an aspect of the present invention, a photomask or the like that prevents the generation of electrostatic damage can be provided.
Drawings
Fig. 1 is a schematic front view of a photomask according to embodiment 1 of the present invention.
Fig. 2 is an enlarged view of a portion a of the photomask shown in fig. 1.
Fig. 3 is a schematic cross-sectional view of a photomask based on line III-III of fig. 1.
Fig. 4 is an explanatory diagram illustrating a process for manufacturing a photomask according to embodiment 1.
Fig. 5 is an explanatory view illustrating a process for manufacturing the photomask of fig. 4.
Fig. 6 is an explanatory view illustrating a process for manufacturing the photomask of fig. 5.
Fig. 7 is an explanatory view illustrating a manufacturing process of the photomask of fig. 6.
Fig. 8 is an explanatory view illustrating a process for manufacturing the photomask of fig. 7.
Fig. 9 is an explanatory view illustrating a process for manufacturing the photomask of fig. 8.
Fig. 10 is an explanatory view illustrating a process for manufacturing the photomask of fig. 9.
Fig. 11 is a schematic cross-sectional view of a photomask according to embodiment 2.
Fig. 12 is a schematic cross-sectional view of a photomask according to embodiment 3.
Fig. 13 is a schematic cross-sectional view of a photomask according to embodiment 4.
Fig. 14 is an explanatory diagram illustrating a process for manufacturing a photomask according to embodiment 4.
Fig. 15 is an explanatory view illustrating a manufacturing process of the photomask of fig. 14.
Fig. 16 is an explanatory view illustrating a manufacturing process of the photomask of fig. 15.
Fig. 17 is an explanatory view illustrating a manufacturing process of the photomask of fig. 16.
Fig. 18 is an explanatory view illustrating a manufacturing process of the photomask of fig. 17.
Fig. 19 is a schematic cross-sectional view of the photomask of embodiment 5.
Description of the reference numerals
10: a photomask; 15: a photomask blank; 21: a transparent substrate; 23: a light shielding film; 24: a resist; 241: a photosensitive part; 242: a non-photosensitive portion; 243: a resist pattern; 25: a transparent conductive film; 31: a peripheral region; 32: an alignment mark; 33: a light-transmitting annular portion; 34: a light shielding annular portion; 35: a pattern for transfer printing; 36: and a transfer region.
Detailed Description
Embodiment 1
Fig. 1 is a schematic front view of a photomask 10 according to embodiment 1 of the present invention. In embodiment 1, a large photomask 10 used for manufacturing a flat panel display will be described as an example. The photomask 10 of embodiment 1 has a rectangular shape (square or rectangle) with one side of the main surface of 300 to 2000 mm and a flat plate shape with a thickness of 5 to 16 mm. In fig. 1, the outer peripheral region 31 of the photomask 10 is exaggerated for convenience of explanation.
Fig. 2 is an enlarged view of a portion a of the photomask 10 shown in fig. 1, and fig. 3 is a schematic cross-sectional view of the photomask based on line III-III of fig. 1.
A transfer pattern 35 is formed on the main surface of the photomask 10 in a plan view. The transfer pattern 35 is formed by patterning an optical film formed on a transparent substrate 21 (see fig. 3) that is a substrate of the photomask 10. The optical film is mostly formed of a conductive film. For example, by applying the light shielding film 23 (see fig. 3) as an optical film, a transfer pattern 35 including a light transmitting portion and a light shielding portion can be formed, and a so-called binary mask can be formed. In this case, the transparent substrate 21 is exposed in the light transmitting portion. The light shielding portion is configured by forming at least a light shielding film 23 on the transparent substrate 21.
The photomask 10 may be a multi-tone photomask (also referred to as a tone mask or a tone mask) in which a light shielding film 23 and a semi-transmissive film that transmits a part of exposure light are used as optical films, and which has a transfer pattern formed by patterning the light shielding film 23 and the semi-transmissive film, respectively. In this case, the semi-transmissive film preferably has a transmittance of about 20 to 60% and a phase shift of 60 degrees or less with respect to the representative wavelength of exposure light.
The photomask 10 may be a phase shift mask in which a phase shift film that transmits a part of exposure light and shifts the phase by approximately 180 degrees is used as an optical film, and a transfer pattern formed by patterning the phase shift film is provided. The photomask 10 may be a phase shift mask that uses a light shielding film and a phase shift film as optical films and has a transfer pattern formed by patterning the light shielding film and the phase shift film, respectively. In this case, the exposure light transmittance of the phase shift film may be about 3 to 70%. Here, approximately 180 degrees means a range of 180±30 degrees.
The transfer pattern 35 is a pattern based on the design of the electronic device to be obtained, and is a pattern transferred onto the transfer object by exposure. In fig. 1 and 2, the transfer pattern 35 is shown by hatching in a lattice shape. The detailed shape of the transfer pattern 35 is not shown.
The outer edge of the transfer pattern 35 is surrounded by an annular portion having a predetermined width.
As can be seen from fig. 1, the "annular" in this specification refers not only to a ring shape but also to a square or like frame shape. The annular portion is preferably formed of one or more films constituting the transfer pattern 35. In the following, since the case where the optical film is the light shielding film 23 will be described as an example, this annular portion will be referred to as a light shielding annular portion 34. Here, the light shielding annular portion 34 is formed by forming the optical film (light shielding film 23) on the transparent substrate 21. Of course, in the case where the optical film is a phase shift film, the annular portion may be constituted by the phase shift film pattern. In the case where the transfer pattern 35 is a laminate of a plurality of films, the portions may be similarly laminated.
When the outer edge shape of the transfer pattern 35 has a concave-convex or sharp-angled portion, there is a risk of discharge with the outer peripheral region 31 described later. Therefore, the light shielding annular portion 34 electrically connected to the transfer pattern 35 is formed on the outer edge of the transfer pattern 35, thereby having a function of adjusting the outer edge shape of the transfer pattern 35 and securing an appropriate width of the light transmitting annular portion 33 described later. And, the risk of the occurrence of the above-mentioned discharge is reduced. Therefore, the outer edge of the light shielding annular portion 34 preferably does not include an acute angle or a right angle portion except in the vicinity of four corners of the transparent substrate 21. The shape of the outer edge of the light shielding annular portion 34 may include a curved line, but in view of convenience in manufacturing (drawing step), it is preferable to include a straight line parallel to each side of the quadrangle forming the edge of the main surface of the photomask 10, and it is more preferable to be composed of only the straight line.
In the cross-sectional view shown in fig. 3 and the like, a gap exists between the transfer pattern 35 and the light shielding annular portion 34, but in the photomask 10 of embodiment 1, the transfer pattern 35 is continuous with the light shielding annular portion 34 at an arbitrary portion of the outer edge thereof.
A light-transmitting annular portion 33 is formed on the outer peripheral side of the light-shielding annular portion 34. That is, the light shielding annular portion 34 is adjacent to the light transmitting annular portion 33, and the light transmitting annular portion 33 surrounds the outer periphery. In embodiment 1, the light-transmitting annular portion 33 is formed as a portion of a predetermined width exposed on the surface of the transparent substrate 21. The width of the light-transmitting annular portion 33 is preferably 1 mm or more, more specifically, preferably 1 to 5 mm. The light-transmitting annular portion 33 has a function of electrically separating the transfer pattern 35 from an outer peripheral region described later, but if the width of the light-transmitting annular portion 33 is too narrow, the electrical separation effect becomes unreliable. On the other hand, if the width of the light-transmitting annular portion 33 is excessively large, a restriction is imposed on the area of the transfer pattern 35.
The outer edge of the light-transmitting annular portion 33 preferably has no acute or right angle portion other than the vicinity of the four corners of the transparent substrate 21. The outer edge shape of the light-transmitting annular portion 33 can be considered similarly to the light-shielding annular portion 34. That is, it is more preferable that the photomask 10 be constituted only by straight lines parallel to the sides of the quadrangle forming the main surface of the photomask. The light-transmitting annular portion 33 may have a portion of a fixed width over the entire circumference.
An outer peripheral region 31 is formed on the outer peripheral side of the light-transmitting annular portion 33. The outer peripheral region 31 is formed in a ring shape around the outer periphery of the principal plane of the photomask 10, and surrounds the light-transmitting ring portion 33. The transparent conductive film 25 is preferably formed on the outer peripheral region 31, and an optical film pattern (here, a light shielding film pattern) is provided on the transparent conductive film 25. The light shielding film pattern formed in the outer peripheral region 31 includes, for example, a mark pattern described later.
Here, the optical film (light shielding film 23 in this case) formed in the outer peripheral region 31 may be formed to include the outer edge of the main surface of the transparent substrate 21, but is preferably formed to be spaced apart from the outer edge by a predetermined distance (for example, 1 to 5 mm).
The transfer pattern 35 is electrically insulated from the outer peripheral region 31 by the light-transmitting annular portion 33. In order to perform insulation reliably, the light-transmitting annular portion 33 preferably has a width of 1 mm or more over the entire circumference.
As described above, the transparent annular portion 33 is preferably in a shape in which the transparent substrate 21 is exposed, but the width of the transparent annular portion 33 may be sufficiently wide to form other patterns in this region. For example, a linear pattern may be provided in which the width of the light-transmitting annular portion 33 is divided into two, so that the above-described electrical insulation effect is doubled. In this case, the exposed portion of the transparent substrate 21 is preferably ensured to have a width of 1 mm or more.
A mark pattern is formed on the outer peripheral region 31, and the mark pattern is not transferred to the transfer object when the photomask is exposed. Here, as an example of the mark pattern, fig. 1 and 2 show an alignment mark 32 for positioning the photomask 10 at the time of exposure. In this way, a plurality of alignment marks 32 can be provided at predetermined intervals.
In fig. 1 to 3, the alignment mark 32 has a shape in which a cross-shaped light shielding portion is disposed inside a quadrangular light transmitting portion. Here, the cross-shaped light shielding portion is located in the outer peripheral region 31, and is isolated in an island shape as a pattern shape. In the case where such isolated portions are also configured to be electrically isolated, there is a risk that: a discharge is generated between the isolated portion and the light shielding film pattern (light shielding film 23 of the outer peripheral region 31) located in the vicinity thereof, and electrostatic breakdown is generated. However, in embodiment 1, since the isolated portion and the light shielding film pattern located in the vicinity thereof are electrically conducted by the transparent conductive film 25, the effect of the present invention of preventing electrostatic destruction due to discharge can be obtained. This function will be described in detail later.
In addition, the shape and the number of the alignment marks 32 are examples, and any shape and any number of the alignment marks 32 can be provided. As the mark pattern, in addition to the above-described alignment mark 32, a product or manufacturer identification or display or the like may be provided. The function and content of the marking pattern are not limited. These marking patterns can be of various designs corresponding to their function, but in any case the risk of inducing electrostatic destruction can be avoided according to the invention.
The structure of photomask 10 according to embodiment 1 will be further described with reference to fig. 1 to 3.
The photomask 10 is configured by patterning a transparent conductive film 25 and an optical film (here, a light shielding film 23) formed on one main surface of a transparent substrate 21.
The transparent substrate 21 is a substrate formed by polishing a substrate of a transparent material such as synthetic quartz glass or soda lime glass flat and smooth. The transparent substrate 21 preferably transmits 90% or more of light of a representative wavelength included in the exposure light used for exposing the photomask 10.
As the exposure light, if it is an exposure device for manufacturing a semiconductor device, a light source such as an i-line, krF excimer laser, arF excimer laser, or the like is used. In the case of an exposure apparatus for manufacturing a flat panel display, a light source having 1 wavelength of i line, h line, g line, or a wavelength band including i line to g line is used.
The transfer pattern 35 is a pattern composed of an optical film pattern designed based on an electronic device to be obtained using the photomask 10, and is directly formed on the transparent substrate. The transfer pattern 35 can be formed by patterning one optical film or by patterning and laminating a plurality of optical films in the process of manufacturing the transfer pattern 35. The transfer pattern 35 may be, for example, a pattern formed of the light shielding film 23, or a pattern formed of the semi-transparent film or the phase shift film together with the light shielding film 23, or instead of the light shielding film 23. The transfer pattern 35 may have a phase shifter in which a recess is formed on the surface of the transparent substrate 21 together with any one of the optical film patterns.
In the photomask 10 shown in fig. 3, the light shielding film 23 constituting the pattern 35 for transfer has conductivity. The light shielding film 23 may be a film containing a metal such as chromium, tantalum, molybdenum, titanium, or tungsten. For example, the light shielding film 23 may be a film made of the above metal, or a film containing an oxide, nitride, carbide, oxynitride, or oxynitrided carbide thereof. The light shielding film 23 may be a metal silicide containing a metal such as tantalum or molybdenum, or an oxide, nitride, carbide, oxynitride, or nitride oxide thereof. The light shielding film 23 does not substantially transmit exposure light. For example, the optical density OD (Optical Density) may be 3 or more, and more preferably 5 or more.
In the light shielding annular portion 34, the light shielding film 23 is formed annularly on the transparent substrate 21 so as to surround the transfer pattern 35. As described above, the light shielding film 23 constituting the transfer pattern 35 is electrically continuous with the light shielding film 23 constituting the light shielding annular portion 34. Alternatively, the boundary between the transfer pattern 35 and the light shielding annular portion 34 may be indistinguishable.
In the light-transmitting annular portion 33, a film is not laminated on the transparent substrate 21, and the transparent substrate 21 is exposed.
In the outer peripheral region 31, a transparent conductive film 25 is formed on the transparent substrate 21, and an alignment mark 32 composed of a light shielding film pattern is formed on the transparent conductive film 25. The alignment mark 32 includes a light transmitting portion and a light shielding portion. In the light-transmitting portion, the light-shielding film 23 is not laminated on the transparent conductive film 25 formed on the transparent substrate 21, and in the light-shielding portion, the light-shielding film 23 is laminated on the transparent conductive film 25.
The transparent conductive film 25 is, for example, a film other than ITO (indium tin oxide) film, znO (zinc oxide) film or SnO 2 (tin oxide) film, in 2 O 3 In other than (indium oxide) film x SnYO z Film, sn x SbYO z Films having light transmittance and conductivity, such as films. The transparent conductive film 25 has a transmittance of 85% or more, preferably 90% or more, for example, for i-line, h-line, or g-line, and a Sheet resistance value (Sheet resistance) of preferably 10mΩ/≡or less. The thickness of the transparent conductive film 25 is preferably 20 nm or less. Ta as a transparent protective layer may be laminated on the transparent conductive film X O Y (tantalum oxide) films. In this case, as a laminateThe film preferably satisfies the above film thickness, transmittance, or conductivity.
The transparent conductive film 25 may have an antireflection film on the transparent substrate 21 side. The antireflection film has a function of improving the transmittance of exposure light by being laminated on the transparent conductive film 25. The material of the transparent conductive film 25 is preferably a material having projective properties and electrical conductivity, and examples thereof include Si 3 N 4 、ZrO 2 A material which is a main component. In the case of the laminated structure, the laminated film preferably satisfies the film thickness and the conductivity as a whole, and the light transmittance is preferably 90% or more.
In the outer peripheral region 31, the light transmittance of the light transmitting portion is slightly reduced by the transparent conductive film 25, but there is no problem in recognition of the mark pattern such as the alignment mark 32. On the other hand, in the transfer pattern 35, since the light transmittance of the light transmitting portion is not reduced, fine pattern transfer can be performed in detail.
The transparent conductive film 25 is preferably a material having resistance to an etchant of the light shielding film 23. That is, the transparent conductive film 25 and the light shielding film 23 preferably have etching selectivity.
A procedure for manufacturing an electronic device using the photomask 10 of embodiment 1 will be described by taking as an example a case of manufacturing a liquid crystal display panel or an organic EL (electroluminescence) display panel TFT (Thin Film Transistor) array substrate.
A TFT substrate is prepared, and a metal film and a resist are laminated in this order on one surface of a transfer object such as a glass substrate.
The TFT substrate is set on an exposure device for a flat panel display. The peripheral region 31 is irradiated with illumination light for alignment, and the alignment mark 32 is detected and positioned.
The transfer pattern 35 is irradiated with exposure light. The exposure light source is, for example, a mercury lamp, and the exposure light is light of a mixed wavelength including a wavelength range of i-line to g-line. The transfer pattern 35 is transferred onto the transfer object by exposure light, and a resist pattern is formed by development.
The metal film is patterned by etching using the resist pattern as a mask. Then, the resist is stripped. Wet etching or dry etching may be used for etching.
The exposure method using the photomask 10 of the present invention may be applied to either projection exposure in which an imaging optical system is disposed between the transferred body and the photomask 10 or proximity exposure in which a gap of several tens to several hundreds micrometers is provided between the transferred body and the photomask 10. The photomask 10 may be used in a photolithography process for any purpose such as the manufacture of a semiconductor circuit, in addition to a flat panel display device. As a projection exposure apparatus in the case of manufacturing a flat panel display device, an optical system having NA (Numerical Aperture: numerical aperture) of about 0.08 to 0.15 is preferably used.
The electrostatic destruction of the photomask 10 and its prevention measures will be described. In the process of photomask 10 in the manufacturing process or the using process, charge may be injected from the vicinity of the outer edge of photomask 10 or the like by contact of a jig or the like to be contacted. For example, the storage box or the transport device is electrostatically charged, and thereby the optical film (light shielding film 23) of the photomask 10 is charged.
In general, when a potential difference is generated between adjacent but discontinuous conductors, an aerial discharge may be generated. Therefore, in the transfer pattern 35 of the photomask 10, there is a possibility that a portion or the vicinity thereof where discharge occurs may cause breakage of the light shielding film 23, or that foreign matter generated by the breakage may adhere to the transfer pattern 35, or the like, resulting in abnormal electrostatic destruction. In general, discharge is generated where the light shielding films 23 generating potential differences are closest to each other.
When such an abnormality occurs in the transfer pattern 35, a pattern having the abnormality is also transferred onto the transfer object. When such abnormalities occur in the outer peripheral region 31, the marker pattern is broken, and detection of positional information of the photomask 10 becomes difficult. In either case, an electronic device such as a TFT substrate cannot be manufactured accurately.
According to the electric field simulation of the present inventors, if the interval between isolated patterns formed of the light shielding film 23 is 1 mm or more, even if a potential difference of about 1 kv is generated, aerial discharge can be substantially prevented.
As described above, the light-transmitting annular portion 33 has a width of 1 mm or more. Thereby, the outer peripheral region 31 and the light shielding annular portion 34 are electrically separated. The width of the light-transmitting annular portion 33 is fixed, and by making the light-shielding film 23 and the transparent conductive film 25 of the outer peripheral region 31 and the light-shielding film 23 of the light-shielding annular portion 34 partially approach each other, even when a large potential difference is generated therebetween, discharge is less likely to occur.
Since the transfer pattern 35 is surrounded by the light shielding annular portion 34 which is electrically conductive, injection of electric charges into the transfer pattern 35 is less likely to occur, and discharge between the light shielding film 23 in this region and the light shielding film 23 in the outer peripheral region 31 can be suppressed. Even if electric charges are sporadically injected into the light shielding film 23 of the transfer pattern 35, the electric charges are conducted to the light shielding annular portion 34, and therefore the electric charges diffuse into the light shielding film 23 of the light shielding annular portion 34, and the potential difference is reduced. Therefore, the possibility of discharge in the transfer pattern 35 can also be reduced.
Since the outer peripheral region 31 has the transparent conductive film 25, and the transparent conductive film 25 has conductivity, as shown in fig. 2, the alignment mark 32 is surrounded by the light-transmitting portion, and is not electrically isolated even when an isolated portion is included as a pattern design. Therefore, no charge is accumulated in the isolated portion designed as a pattern, and no potential difference is generated in the outer peripheral region 31. Accordingly, discharge in the outer peripheral region 31 can be prevented.
As described above, by providing the light-transmitting annular portion 33 and the light-shielding annular portion 34, the possibility of occurrence of the momentary discharge can be reduced. Therefore, the possibility of electrostatic damage occurring in either the transfer pattern 35 or the alignment mark 32 can be reduced.
In the transfer pattern 35, the transparent conductive film 25 is not formed in the light transmitting portion, so that the transmittance of the exposure light is not reduced, and the contrast of the transferred pattern can be advantageously maintained. Further, since the problem caused by the film thickness deviation of the transparent conductive film 25 is not caused and the influence of the wavelength dependence of the transmittance due to the film material is not caused, it is preferable that the fluctuation of the transfer condition is not caused when the exposure light source including the predetermined wavelength band is used.
Fig. 4 to 10 are explanatory views illustrating a manufacturing process of photomask 10. Fig. 4 to 10 each show the same cross section as fig. 3.
Fig. 5 shows the photomask blank 15 in a state where a transparent conductive film 25 is formed near the outer edge on the main surface of the transparent substrate 21 shown in fig. 4. The photomask blank 15 has a transfer region 36 for forming a pattern for transfer on the inner side of the outer peripheral region 31 covered with the transparent conductive film 25. In the transfer region 36, the transparent substrate 21 is exposed.
When preparing the photomask blank 15, the transparent conductive film 25 can be formed by a film forming method such as sputtering in a state where a mask (masking) is applied to the central portion of the transparent substrate 21. In the case where the transparent conductive film 25 is provided with an antireflection film on the transparent substrate 21 side, these 2 films are laminated in order. Fig. 4 to 19 show examples of cases where no antireflection film is provided.
Alternatively, the transparent conductive film 25 or the laminated film of the antireflection film and the transparent conductive film 25 may be formed on the entire main surface of the transparent substrate 21, and then the film on which the central portion of the transfer pattern 35 is formed may be removed by photolithography. Thereby, the photomask blank 15 having the transparent conductive film 25 formed on the outer peripheral region 31 is completed.
A light shielding film 23 is further formed on the main surface of fig. 5. Fig. 6 shows this state. The light shielding film 23 is also formed by a film forming method such as sputtering. The state shown in fig. 6 is also sometimes referred to as a photomask blank 15.
Fig. 7 shows a state in which the resist 24 is coated on one face of fig. 6. The resist 24 may be applied by, for example, a slot coater or a spin coater. By performing prebaking after coating, adhesion between the resist 24 and the light shielding film 23 can be improved. The substance in the state shown in fig. 7 may be referred to as a photomask blank 15. In the following description, a case where the resist 24 is of a positive type will be described as an example.
The drawing is performed by a drawing device using a laser beam, an electron beam, or the like. The resist 24 is drawn based on pattern data for forming the predetermined transfer pattern 35, the light shielding annular portion 34, the light transmitting annular portion 33, and the alignment mark 32 in the outer peripheral region 31. In the following description, a case of using a laser drawing device will be described as an example. As shown in fig. 8, a photosensitive portion 241 irradiated with laser light and a non-photosensitive portion 242 not irradiated with laser light are formed on the resist 24.
The resist 24 is developed to obtain a resist pattern 243 shown in fig. 9.
An etching process for the light shielding film 23 is performed using the resist pattern 243 shown in fig. 9. That is, the light shielding film 23 not covered with the resist pattern 243 is removed from the transparent substrate 21. The transparent conductive film 25 formed in the outer peripheral region 31 is resistant to the etchant (etching liquid in this case, wet etching) of the light shielding film 23, and is therefore not damaged. Fig. 10 shows a state after the etching process. Then, the resist pattern 243 is stripped. This is accomplished using photomask 10 described with reference to fig. 3.
In addition, a mask may be attached after the resist pattern 243 is stripped Pellicle ) Photomask 10 is completed. The mask is mounted by adhering a mask frame holding the mask film to the light shielding film 23 of the outer peripheral region 31.
According to embodiment 1, a photomask 10 that prevents electrostatic breakdown from occurring can be provided. Since the antistatic film is not provided on the transfer pattern 35, attenuation of exposure light does not occur, and a photomask 10 capable of transferring a predetermined pattern with high accuracy can be provided.
According to embodiment 1, a photomask blank 15 for a photomask 10 that prevents electrostatic damage can be provided.
Embodiment 2
Embodiment 2 relates to a photomask 10 as follows: in the outer peripheral region 31, the edge of the light shielding film pattern and the edge of the transparent conductive film pattern are not located at the same position, and the edge of the latter is exposed. The same parts as those of embodiment 1 will not be described.
Fig. 11 is a schematic cross-sectional view of photomask 10 according to embodiment 2. In embodiment 2, the transparent conductive film 25 provided in the outer peripheral region 31 extends inward of the boundary between the outer peripheral region 31 and the light-transmitting annular portion 33.
The light-transmitting annular portion 33 is double annular in which the transparent substrate 21 is exposed and the outside is covered with the transparent conductive film 25. The exposed portion of the transparent substrate 21 in the light-transmitting annular portion 33 has a fixed width of 1 mm or more. Although not shown, when the photomask 10 is viewed from the front, the inner edge of the transparent conductive film 25 is parallel to the outer edge of the light-shielding annular portion 34.
According to embodiment 2, the width of the outer peripheral region 31 can be determined without being limited by the width of the transparent conductive film 25 provided in advance on the photomask blank 15.
Embodiment 3
Embodiment 3 relates to a photomask 10 in which the width of a transparent conductive film 25 in an outer peripheral region 31 is smaller than the width of a light shielding film pattern. The same parts as those of embodiment 1 will not be described.
Fig. 12 is a schematic cross-sectional view of photomask 10 according to embodiment 3. In embodiment 3, the width of the transparent conductive film 25 is smaller than the width of the outer peripheral region 31. Therefore, the outer peripheral region 31 covers the surface of the transparent substrate 21 inside the transparent conductive film 25. Although not shown, when the photomask 10 is viewed from the front, the inner edge of the outer peripheral region 31 is parallel to the outer edge of the light-shielding annular portion 34.
According to embodiment 3, the width of the outer peripheral region 31 can be determined without being limited by the width of the transparent conductive film 25 provided in advance on the photomask blank 15.
In addition, instead of the transparent conductive film 25, a film having light transmittance and conductivity may be provided in the vicinity of the alignment mark 32, so that the isolated light shielding film 23 in the alignment mark 32 is electrically connected to the light shielding film 23 in the outer peripheral region 31.
Embodiment 4
Embodiment 4 relates to a photomask 10 having a double-layer structure of a transfer pattern 35 and a light-shielding annular portion 34. The same parts as those of embodiment 1 will not be described.
Fig. 13 is a schematic cross-sectional view of photomask 10 according to embodiment 4. The light shielding annular portion 34 and the transfer pattern 35 of the photomask 10 of embodiment 4 are formed of a laminated film of the transparent conductive film 25 and the light shielding film 23.
Fig. 14 to 18 are explanatory views for explaining a manufacturing process of photomask 10 according to embodiment 4.
Fig. 14 shows a photomask blank 15 in which a transparent conductive film 25 and a light-shielding film 23 are laminated on one main surface of a transparent substrate 21. Fig. 15 shows a resist-equipped photomask blank having a resist 24 laminated on a light-shielding film 23 of the photomask blank 15 of fig. 14. The resist-equipped photomask blank shown in fig. 15 may also be referred to as a photomask blank 15.
Fig. 16 shows a state in which after the drawing step, a resist pattern 243 is formed by a developing step, and the light shielding film 23 is patterned by a first etching step using the resist pattern 243. The transparent conductive film 25 has resistance to an etchant of the light shielding film 23.
Next, fig. 17 shows a state in which a resist pattern 243 is formed only in the outer peripheral region 31 by a method described below.
The resist pattern 243 shown in fig. 16 is stripped off, and the resist pattern is coated by slit coating Slit coater ) The method of the present invention is to coat a new resist 24 on the entire surface, and then expose and develop the resist to leave only the resist portion corresponding to the outer peripheral region 31, thereby forming a resist pattern 243 shown in fig. 17.
Fig. 18 shows a state after etching of the transparent conductive film 25 using the resist pattern 243. The transparent conductive film 25 is removed in the light transmitting portion of the transfer pattern 35, and the transparent conductive film 25 remains in the other portions.
According to embodiment 4, the width of the transparent conductive film 25 is not specified in the stage of the photomask blank 15. Therefore, the photomask manufacturer can arbitrarily determine the width of the transparent conductive film 25.
This embodiment 4 is advantageous in that the photomask blank 15 can be formed easily as compared with embodiment 1. Even if the transparent conductive film 25 is present on the transparent substrate 21 side of the light shielding film pattern in the transfer pattern 35, there is no problem. However, when the transfer pattern 35 includes not only the light shielding film pattern but also the semi-transparent film (including the phase shift film) pattern, the photomask 10 of embodiment 1 having no other film on the transparent substrate 21 side of the transfer pattern 35 is advantageous.
Embodiment 5
Embodiment 5 relates to a photomask 10 in which a transparent conductive film 25 and a light shielding film 23 are laminated in reverse order in an outer peripheral region 31. The same parts as those of embodiment 1 will not be described.
Fig. 19 is a schematic cross-sectional view of photomask 10 according to embodiment 5. In the outer peripheral region 31, a light shielding film pattern forming a marker pattern is covered with the transparent conductive film 25. The method for manufacturing photomask 10 according to embodiment 5 is as follows. The light shielding film 23 formed on one main surface of the transparent substrate 21 is patterned into a predetermined shape by photolithography to produce a photomask intermediate having a transfer pattern 35, an outer peripheral region 31 having an alignment mark 32, and a light-transmitting annular portion 33 where the transparent substrate 21 having a predetermined width between the transfer pattern 35 and the outer peripheral region 31 is exposed. Next, the transparent conductive film 25 is laminated on the light shielding film 23 of the outer peripheral region 31 and on the light transmitting portion of the alignment mark 32.
When the transparent conductive film 25 is laminated, the transparent conductive film 25 may be formed in a state where a mask is applied to a region other than the outer peripheral region 31. In the photomask intermediate, after the transparent conductive film 25 is formed on the main surface thereof, the portions other than the outer peripheral region 31 may be removed by a photolithography process.
According to embodiment 5, a photomask 10 that prevents the occurrence of electrostatic breakdown can be manufactured using a normal photomask in which a transfer pattern 35 is laminated on one main surface of a transparent substrate 21.
The technical features (structural elements) described in the above embodiments can be combined with each other, and new technical features can be formed by the combination.
The presently disclosed embodiments are considered in all respects to be illustrative and not restrictive. The scope of the present invention is shown not by the above-described embodiments but by the claims, and all changes within the meaning and range equivalent to the claims are included.
Claims (11)
1. A photomask for use in a semiconductor device,
which has, on a main surface of a transparent substrate:
a transfer pattern formed by patterning the optical film;
a light-transmitting annular portion surrounding an outer periphery of the pattern for transfer; and
an outer peripheral region surrounding an outer periphery of the light-transmitting annular portion,
the transparent annular part has a part exposed on the surface of the transparent substrate on the whole circumference, the width of the part exposed on the surface of the transparent substrate is more than 1 millimeter,
in the outer peripheral region, a transparent conductive film and a mark pattern formed by patterning the optical film are laminated on the main surface.
2. The photomask of claim 1, wherein,
in the peripheral region, the transparent conductive film is formed between the transparent substrate and the optical film.
3. The photomask of claim 1, wherein,
in the peripheral region, the optical film is formed between the transparent substrate and the transparent conductive film.
4. A photomask according to any one of claim 1 to 3, wherein,
the optical film includes a light shielding film.
5. A photomask according to any one of claim 1 to 3, wherein,
the outer edge of the transfer pattern is surrounded by a light shielding annular portion which is electrically connected to the transfer pattern and is constituted by forming the optical film on the main surface.
6. The photomask of claim 5, wherein,
the light shielding annular portion has an outer edge parallel to an inner edge of the outer peripheral region.
7. A photomask according to any one of claim 1 to 3, wherein,
the mark pattern is an alignment mark used at the time of exposure of the photomask.
8. A method for manufacturing a photomask, comprising the steps of:
a step of preparing a photomask blank, the photomask blank being formed as follows: a transparent substrate having a transfer region for forming a pattern for transfer and an outer peripheral region surrounding an outer periphery of the transfer region, the transfer region having an optical film formed on the transparent substrate, the outer peripheral region having a transparent conductive film and the optical film laminated on the transparent substrate; and
a patterning step of patterning only the optical film,
in the patterning step, the transfer pattern is formed, a mark pattern is formed on the outer peripheral region, and a light-transmitting annular portion having a portion where the transparent substrate is exposed to a predetermined width is formed between the transfer pattern and the outer peripheral region.
9. A method for manufacturing a photomask, comprising the steps of:
a step of preparing a photomask blank having a transfer region for forming a pattern for transfer and an outer peripheral region surrounding the outer periphery of the transfer region on a transparent substrate, the transfer region and the outer peripheral region having a laminated film of a transparent conductive film and an optical film formed on the transparent substrate;
a patterning step of forming the transfer pattern in the transfer region, forming a mark pattern in the outer peripheral region, and forming a light-transmitting annular portion having a portion where the transparent substrate is exposed to a predetermined width between the transfer pattern and the outer peripheral region by patterning only the optical film; and
and a removal step of removing the transparent conductive film exposed in the transfer region in the patterning step.
10. A method for manufacturing a photomask, comprising the steps of:
a step of preparing a photomask intermediate having, on a transparent substrate: a transfer pattern formed by patterning the optical film; an outer peripheral region surrounding the outer periphery of the transfer pattern and having a mark pattern; and a light-transmitting annular portion having a portion where the transparent substrate having a predetermined width is exposed between the transfer pattern and the outer peripheral region; and
and a step of laminating a transparent conductive film on the outer peripheral region while applying a mask to the region other than the outer peripheral region.
11. A method for manufacturing an electronic device includes the steps of:
a step of preparing the photomask according to any one of claims 1 to 3; and
and transferring the transfer pattern to a transfer object using an exposure device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2018056906 | 2018-03-23 | ||
| JP2018-056906 | 2018-03-23 |
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| JP (1) | JP7337511B2 (en) |
| KR (1) | KR102193506B1 (en) |
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Also Published As
| Publication number | Publication date |
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| TW201940959A (en) | 2019-10-16 |
| JP7337511B2 (en) | 2023-09-04 |
| TWI710850B (en) | 2020-11-21 |
| CN110297388A (en) | 2019-10-01 |
| JP2019168677A (en) | 2019-10-03 |
| KR102193506B1 (en) | 2020-12-21 |
| KR20190111779A (en) | 2019-10-02 |
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