CN105319831B - The manufacturing method of photomask, the manufacturing method of photomask and display device - Google Patents
The manufacturing method of photomask, the manufacturing method of photomask and display device Download PDFInfo
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- CN105319831B CN105319831B CN201510418721.9A CN201510418721A CN105319831B CN 105319831 B CN105319831 B CN 105319831B CN 201510418721 A CN201510418721 A CN 201510418721A CN 105319831 B CN105319831 B CN 105319831B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 238000012546 transfer Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000002834 transmittance Methods 0.000 claims abstract description 22
- 238000010023 transfer printing Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 15
- 238000011161 development Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 75
- 230000007261 regionalization Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 141
- 230000000052 comparative effect Effects 0.000 description 25
- 239000010410 layer Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 238000004026 adhesive bonding Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MXDSNPXKZCSARO-UHFFFAOYSA-N [Ne].[F].[O].[N].[C] Chemical compound [Ne].[F].[O].[N].[C] MXDSNPXKZCSARO-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- -1 carbonization Object Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Abstract
The present invention relates to the manufacturing methods of photomask, the manufacturing method of photomask, photomask blank and display device.It is advantageously adapted to the exposure environment of display device manufacture exposure mask and can steadily transfers small pattern.Photomask have by film forming on transparent substrate semi-transparent film and low light transmission film pattern respectively and the transfer pattern that is formed, above-mentioned transfer includes the master pattern for the diameter W1 (μm) being made of the transmittance section for exposing above-mentioned transparent substrate with pattern；The auxiliary patterns for the width d (μm) be configured near above-mentioned master pattern, being made of the semi light transmitting part for being formed with above-mentioned semi-transparent film on above-mentioned transparent substrate；And be configured at above-mentioned transfer pattern formation have region other than above-mentioned master pattern and above-mentioned auxiliary patterns, on above-mentioned transparent substrate at least formed with the low light transmission portion of above-mentioned low light transmission film, the width d of the diameter W1 of above-mentioned master pattern, the light transmittance T1 of above-mentioned semi light transmitting part and above-mentioned semi light transmitting part have defined relationship.
Description
Technical field
The present invention relates to be efficiently used for using liquid crystal, organic EL as the photomask blank of the manufacture of the display device of representative,
The manufacturing method of photomask, the manufacturing method of photomask and the display device using the photomask.
Background technique
In patent document 1, the photomask as the manufacture for semiconductor device records following phase offset and covers
Film is configured with 4 auxiliary light transmission portions, the light in principal light transmission portion and auxiliary light transmission portion with each side of principal light transmission portion (sectional hole patterns) in parallel
Phasing back.
The translucent phase for being recorded in patent document 2 with transparent substrate and being formed on above-mentioned transparent substrate is inclined
Move the large-scale phase shift mask of film.
Patent document 1: Japanese Unexamined Patent Publication 3-15845 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2013-148892 bulletin
Currently, in the display device for including liquid crystal display device, EL display device etc., it is desirable to brighter and electric power saving,
And wish to improve the display performance of fine definition, high speed display, wide viewing angle etc.
For example, mentioning thin film transistor (TFT) used in above-mentioned display device (Thin Film Transistor, " TFT ")
Words, in the multiple patterns for constituting TFT, if the contact hole for being formed in interlayer dielectric, which does not have reliably, makes upper layer and lower layer
Pattern connection effect, then it cannot be guaranteed that accurately movement.On the other hand, in order to strongly make the aperture opening ratio of display device become larger
And become bright, power saving display device, need the diameter of contact hole very small.It is accompanied by this, it is desirable to be used to form such connect
The diameter for the sectional hole patterns that the photomask of contact hole has also microminiaturization (such as less than 3 μm).For example, it is desired to 2.5 μm of diameter hereinafter,
Need further exist for 2.0 μm of sectional hole patterns below of diameter, in the near future, it is also considered that it is desirable that formed have lower than 1.5 μm of 2.0 μm with
Under diameter pattern.According to such background, it is desirable to be able to reliably transfer the manufacture of the display device of small contact hole
Technology.
However, compared with display device, in semiconductor device (LSI) system that integrated level height, pattern microminiaturization significantly develop
Make in the field with photomask, in order to obtain high resolution, exposure device using high NA (Numerical Aperture:
Numerical aperture) (such as 0.2 or more) optical system, exist exposure light short wavelengthization progress process, mostly use KrF,
The excimer laser (the respectively single wavelength of 248nm, 193nm) of ArF.
On the other hand, in the field of lithography of display device manufacture, in order to improve resolution, do not apply generally it is above-mentioned that
The method of sample.As LCD with etc. and the NA of exposure device that is known is 0.08~0.10 or so, exposure light source is also using including
I line, h line, g line wide wavelength domain, thus compared with resolution, the depth of focus, have instead pay attention to production efficiency, cost becomes
Gesture.
But even if the microminiaturization of pattern requires also high like never before in display device manufacture as described above.
Here, the technology of semiconductor device manufacture is intactly used for display device manufacture, there are Railway Projects.For example, to
The conversion that high-resolution exposure device with high NA (numerical aperture) carries out needs big investment, can not be with display device
Price obtains matching.Alternatively, for exposure wavelength change (short wavelength as ArF excimer laser with single wavelength come
Using), it is difficult to the display device applications itself with large area, and even if using, in addition to production efficiency reduce other than, In
Need considerable investing improper.
Also, in the photomask of display device, as described later, there is the photomask with semiconductor device manufacture
Restriction different, in manufacture or distinctive various projects.
According to above-mentioned truth, by the photomask of document 1 be intactly diverted to display device manufacture have in reality it is tired
It is difficult.In addition, the note that half-tone type phase shift mask documented by document 2 compared with binary mask, has light intensity distributions to improve
It carries, but is also improved the leeway of performance.
Summary of the invention
Therefore, in the manufacturing method using the display device of display device manufacture exposure mask, it is desirable to overcome the above subject,
Even small pattern, it is also desirable to steadily carry out for the transfer on transfer printing body.Therefore, it is an object of the invention to obtain
The excellent of small pattern can be transferred to the exposure environment for being advantageously adapted to display device manufacture exposure mask and steadily
Photomask and its manufacturing method.
In order to solve the above problems, the present invention has following structure.The present invention is that the light that feature is following structures 1~9 is covered
Mould, feature are the manufacturing method of the photomask of following structures 10, and feature is the manufacturing method of the display device of following structures 11, with
And feature uses photomask blank for the display device manufacture of following structures 12 and 13.
(structure 1)
Structure 1 of the invention is a kind of photomask, with transfer pattern, the transfer pattern by film forming in saturating
Semi-transparent film and low light transmission film on bright substrate are patterned respectively and are formed, which is characterized in that above-mentioned semi-transparent film makes
The light shift substantially 180 degree of representative wavelength in i line~g line wave-length coverage, and have and represent wave relative to above-mentioned
Long transmitance T1 (%), above-mentioned low light transmission film have the transmission than above-mentioned semi-transparent film relative to the above-mentioned light for representing wavelength
Rate T1 (%) low transmitance T2 (%), above-mentioned transfer is included with pattern to be made of the transmittance section for exposing above-mentioned transparent substrate
The master pattern of diameter W1 (μm)；It is configured near above-mentioned master pattern, is above-mentioned semi-transparent by being formed on above-mentioned transparent substrate
The auxiliary patterns for the width d (μm) that the semi light transmitting part of film is constituted；And it is configured at above-mentioned transfer pattern, the above-mentioned master map of formation
Region other than case and above-mentioned auxiliary patterns and on above-mentioned transparent substrate at least formed with the low light transmission of above-mentioned low light transmission film
Portion meets following formula (1) and (2),
0.8≤W1≤4.0···(1)
(structure 2)
According to photomask documented by structure 1, structure 2 of the invention is characterized in that, the above-mentioned width of above-mentioned auxiliary patterns
Degree d meets d≤W1.
(structure 3)
According to photomask documented by structure 1 or 2, structure 3 of the invention is characterized in that, in above-mentioned transfer pattern
Above-mentioned master pattern above-mentioned diameter W1 be 4.0 (μm) hereinafter, and accordingly with above-mentioned master pattern, formed on transfer printing body
The sectional hole patterns of diameter W2 (wherein, W1 > W2).
(structure 4)
According to photomask documented by 1~3 any one of structure, the structure 4 of invention is characterized in that, above-mentioned transfer pattern
In above-mentioned master pattern above-mentioned diameter W1 be 4.0 (μm) hereinafter, and accordingly with above-mentioned master pattern, the shape on transfer printing body
It is the sectional hole patterns of 3.0 (μm) (wherein, W1 > W2) below at diameter W2.
(structure 5)
According to photomask documented by structure 3 or 4, structure 5 of the invention is characterized in that, when by above-mentioned master pattern
When the poor W1-W2 of above-mentioned diameter W1 and the above-mentioned diameter W2 on above-mentioned transfer printing body are set as biasing β (μm), 0.2≤β≤1.0.
(structure 6)
According to photomask documented by 1~5 any one of structure, structure 6 of the invention is characterized in that, above-mentioned low light transmission film
The above-mentioned transmitance T2 (%) relative to the above-mentioned light for representing wavelength meet T2 < 30.
(structure 7)
According to photomask documented by 1~6 any one of structure, structure 7 of the invention is characterized in that, above-mentioned low light transmission film
Substantially it is not through the above-mentioned light for representing wavelength.
(structure 8)
According to photomask documented by 1~7 any one of structure, structure 8 of the invention is characterized in that above-mentioned transmittance section makes
Above-mentioned transparent substrate exposes, and above-mentioned semi light transmitting part is formed with above-mentioned semi-transparent film, above-mentioned low light transmission portion on above-mentioned transparent substrate
By stating semi-transparent film and above-mentioned low light transmission film is formed above-mentioned transparent substrate upper layer is stacked on.
(structure 9)
According to the described in any item photomasks of structure 1~8, structure 9 of the invention is characterized in that, above-mentioned semi-transparent film by
Material containing any of Zr, Nb, Hf, Ta, Mo, Ti and Si or the oxide containing above-mentioned material, nitride, nitrogen oxides,
The material of carbide or oxidation nitridation carbide is constituted.
(structure 10)
Structure 10 of the invention is a kind of manufacturing method of photomask, has and is formed in transparent substrate and for being turned
The transfer pattern of independent sectional hole patterns is formed on print body, the manufacturing method of the photomask is characterised by comprising: being prepared upper
State the work that semi-transparent film and low light transmission film, the photomask blank for foring the first photoresist in turn are laminated on transparent substrate
Sequence；The first description based on defined above-mentioned transfer pattern is carried out to above-mentioned first photoresist and is formed by development
The process of first corrosion-resisting pattern；Using above-mentioned first corrosion-resisting pattern as exposure mask and to above-mentioned low light transmission film carry out wet etching to
The process for forming low light transmission film figure；Above-mentioned first corrosion-resisting pattern is removed and whole including above-mentioned low light transmission film figure
The process that a face forms the second photoresist；Second is carried out to above-mentioned second photoresist to describe and by development formation
The process of second corrosion-resisting pattern；And using above-mentioned second corrosion-resisting pattern and above-mentioned low light transmission film figure as exposure mask to above-mentioned semi-transparent
The process that light film carries out wet etching, above-mentioned semi-transparent film keep the light of the representative wavelength in i line~g line wave-length coverage inclined
Substantially 180 degree is moved, and is had relative to the above-mentioned transmitance T1 (%) for representing wavelength, above-mentioned low light transmission film is relative to above-mentioned generation
The light of table wavelength has the transmitance T2 (%) lower than the transmitance T1 (%) of above-mentioned semi-transparent film, and above-mentioned transfer has with pattern
Have: the master pattern for the diameter W1 (μm) that the transmittance section by exposing above-mentioned transparent substrate is constituted；It is configured near above-mentioned master pattern
The auxiliary patterns for the width d (μm) that semi light transmitting part by being formed with above-mentioned semi-transparent film on above-mentioned transparent substrate is constituted；And
Be configured at above-mentioned transfer pattern, be formed with above-mentioned master pattern and above-mentioned auxiliary patterns other than region and above-mentioned
At least formed with the low light transmission portion of above-mentioned low light transmission film on bright substrate, meet following formula (1) and (2),
0.8≤W1≤4.0···(1)
(structure 11)
Structure 11 of the invention is a kind of manufacturing method of display device comprising: prepare any one of structure 1~9 and is remembered
The process of the photomask of load；With use numerical aperture (NA) be 0.08~0.20 and have including i line, h line, g line exposure use
The exposure device of light source is exposed above-mentioned transfer with pattern, and it is 0.6~3.0 (μ that diameter W2 is formed on transfer printing body
M) process of sectional hole patterns.
(structure 12)
Structure 12 of the invention is a kind of display device manufacture photomask blank, is laminated on above-mentioned transparent substrate
Semi-transparent film and low light transmission film, wherein the semi-transparent film is relative to the representative wavelength in i line~g line wave-length coverage
Transmitance T1 be 30~80 (%), the low light transmission film is relative to the transmitance for representing wavelength than the semi-transparent film
Small, above-mentioned display device manufacture photomask blank is characterized in that, above-mentioned semi-transparent film relative to the above-mentioned wavelength that represents
Refractive index is 1.5~2.9, and is formed to have the film thickness of the substantially phase pushing figure of 180 degree, and above-mentioned low light transmission film is substantially not
Phase pushing figure through the above-mentioned light for representing wavelength, or with the transmitance less than 30% and substantially 180 degree.
(structure 13)
According to display device manufacture photomask blank documented by structure 12, structure 13 of the invention is characterized in that,
Above-mentioned semi-transparent film can be by the transition metal containing Zr, Nb, Hf, Ta, Mo, Ti and the material containing Si or containing their oxidation
The material composition of object, nitride, nitrogen oxides, carbide or oxidation nitridation carbide.
In accordance with the invention it is possible to provide the exposure environment for being advantageously adapted to display device manufacture exposure mask and can be steady
Surely the excellent photomask and its manufacturing method of small pattern are transferred.
Detailed description of the invention
In Fig. 1, it is (b) its schematic cross-sectional view that (a), which is the schematic top plan view of an example of photomask of the invention,.
In Fig. 2, (a)~(f) is the schematic top plan view of the other examples of photomask of the invention.
Fig. 3 is to indicate the schematic cross-sectional view of an example of manufacturing process for photomask of the invention and overlook to illustrate
Figure.
Fig. 4 is the schematic top plan view of the photomask of comparative example 1-1,1-2 and embodiment 1, is to indicate size and base
In the figure of the transfer performance of optical analog.
Fig. 5 indicates the case where photomask using comparative example 1-1,1-2 and embodiment 1, wherein (a) is to indicate this
In the case of the luminous intensity being formed on transfer printing body aerial image, be (b) the section shape for indicating the corrosion-resisting pattern being consequently formed
The figure of shape.
Fig. 6 is the schematic top plan view of the photomask of comparative example 2-1,2-2 and embodiment 2, is to indicate size and base
In the figure of the transfer performance of optical analog.
Fig. 7 indicates the case where photomask using comparative example 2-1,2-2 and embodiment 2, wherein (a) is to indicate this
In the case of the luminous intensity being formed on transfer printing body aerial image, be (b) the section shape for indicating the corrosion-resisting pattern being consequently formed
The figure of shape.
Specific embodiment
If transfer CD (the Critical Dimension, below with the meaning of pattern line-width of pattern possessed by photomask
Think to use) microminiaturization, then by it accurately to transfer printing body (to be etched the film etc. of processing, be also referred to as processed body)
The implementation of the process of transfer becomes more difficult.The resolution limit shown in the exposure device that display device is used as specification
It is 2 μm~3 μm or so in most instances.In contrast, in transfer pattern to be formed, occurred being closely sized to this
Or the pattern of the size lower than the size.Also, display device manufacture exposure mask uses exposure mask because manufacturing with semiconductor device
It is larger compared to area, so in actual production, by the transfer pattern plane with the CD less than 3 μm equably transferred with
Bigger difficulty.
Therefore, it is necessary to by pure resolution ratio (depending on exposure wavelength, the numerical aperture of exposure light system
) other than element work hard, effectively to play transfer performance.
Also, because the area of transfer printing body (flat display substrate) is big, turn in the pattern carried out by exposure
In the process of print, it may also be said to be easy to produce transfer printing body surface flatness caused by the environment that defocuses.In the environment
Under, substantially ensure that the depth of field (DOF:Depth of Focus) of focus when exposure is significantly.
In addition, the photomask of display device manufacture size as well-known is larger, it is wet in photomask manufacturing process
In formula processing (development, wet etching), all positions ensure that the uniformity of CD is not easy in face.Even if final in order to make
CD precision is in defined allowed band, it is ensured that the sufficient depth of focus (DOF) in exposure process is also very important, separately
It is outer to wish other performances not with its variation.
The present invention is a kind of photomask, the photomask have by respectively to the semi-transparent film to form a film on the transparent substrate with
And low light transmission film is patterned and the transfer pattern that is formed.Fig. 1 citing indicates to have the transfer of photomask of the invention to use
Pattern.In Fig. 1, (a) is schematic top plan view, is (b) schematic cross-sectional view.
As shown in (a) of Fig. 1, the transfer pattern formed on the transparent substrate includes master pattern and in master pattern
The auxiliary patterns nearby configured.
In this mode, master pattern is made of the transmittance section of exposing transparent substrate, and auxiliary patterns are by the transparent substrate
The semi light transmitting part for being formed with semi-transparent film is constituted.In addition, the part for surrounding master pattern and auxiliary patterns is on the transparent substrate
At least formed with the low light transmission portion of low light transmission film.That is, being formed with master pattern and auxiliary in transfer pattern shown in Fig. 1
Region other than the region of pattern is low light transmission portion.As shown in (b) of Fig. 1, in this mode, low light transmission portion is on the transparent substrate
Semi-transparent film and low light transmission film is laminated.Semi-transparent film has the wide of the representative wavelength for making to be in i line~g line wave-length coverage
Deflection moves the phase pushing figure of 180 degree, has relative to the transmitance T1 (%) for representing wavelength.
The low light transmission film of photomask of the invention is can be relative to the representative wavelength of exposure light with defined low
Cross the film of rate.Low light transmission film used in the manufacture of photomask of the invention is relative in i line~g line wave-length coverage
The light of wavelength is represented, there can be the transmitance T2 (%) lower than the transmitance T1 (%) of semi-transparent film.
Here, corresponding with the master pattern when the diameter of master pattern (W1) is 4 μm or less, it can on transfer printing body
Form the small master pattern (sectional hole patterns) with diameter W2 (μm) (wherein W1 > W2).
Specifically, it is preferable that W1 (μm) is made to become relationship as following formula (1).
0.8≤W1≤4.0…(1)
The diameter W2 (μm) of the master pattern (sectional hole patterns) formed on transfer printing body at this time can be 0.6≤W2≤3.0.
In addition, photomask of the invention can manufacture the purpose of the pattern of useful microsize with formation to display device
To use.For example, when the diameter W1 of master pattern be 3.0 (μm) below when, effect of the invention is more significant.It will can preferably lead
The diameter W1 (μm) of pattern is set as 1.0≤W1≤3.0.In addition, though can also make the relationship W1=of diameter W1 Yu diameter W2
W2, but preferably W1 > W2.That is, in the case where β (μm) is set as bias, when β=W1-W2 > 0 (μm), 0.2≤β≤
1.0, it can be more preferably, 0.2≤β≤0.8.In this way, as described later, the corrosion-resisting pattern that can be reduced on transfer printing body
The advantageous effect such as loss.
Among the above, the diameter W1 of master pattern mean diameter of a circle or with its approximate numerical value.For example, working as master pattern
Shape when being regular polygon, the diameter W1 of master pattern is inscribe diameter of a circle.If the shape of master pattern is just as illustrated in fig. 1
Rectangular, then the diameter W1 of master pattern is the length on one side.In the diameter W2 of the master pattern after being transferred, for diameter of a circle or
On this point person is with its approximate numerical value is identical.
Certainly, when to form the pattern of more microminiaturization, W1 can be also set as 2.5 (μm) below or 2.0 (μm) with
Under, also, W1 is set as 1.5 (μm) below also can be using the present invention.
The generation of exposure light used in exposure relative to the photomask of the invention with such transfer pattern
The phase difference of table wavelength, master pattern and auxiliary patternsSubstantially 180 degree.That is, through the above-mentioned light for representing wavelength of master pattern
With the above-mentioned phase difference for representing wavelength through auxiliary patternsSubstantially 180 degree.Substantially 180 degree means 120~240 degree.
It is preferred that phase differenceIt is 150~210 degree.
In addition, photomask of the invention significant effect when using including the exposure light of i line, h line or g line, especially
It is suitable for that will include the wide wavelength of i line, h line and g line as exposure light.In this case, as represent wavelength can
For any of i line, h line, g line.Such as photomask of the invention can be constituted using h line as wavelength is represented.
In order to form such phase difference, master pattern is set as transmittance section made of transparent substrate main surface is exposed, auxiliary figure
Case is set as semi light transmitting part made of forming semi-transparent film on the transparent substrate, by the semi-transparent film relative to the above-mentioned wavelength that represents
Phase pushing figure is set as substantially 180 degree.
Light transmittance T1 possessed by semi light transmitting part can be set as follows.That is, opposite in the semi-transparent film that semi light transmitting part is formed
When the above-mentioned transmitance for representing wavelength is T1 (%), it is set as 30≤T1≤80.More preferably 40≤T1≤75.In addition, through
Rate T1 (%) is using the transmitance of transparent substrate as the above-mentioned transmitance for representing wavelength when benchmark.
In photomask of the invention, for be configured at the region being formed with other than master pattern and auxiliary patterns and
Be formed as surrounding for the low light transmission portion of master pattern and auxiliary patterns, can constitute as follows.
Low light transmission portion is substantially cannot be for exposure light (the representative wavelength in i line~g line wave-length coverage
Light) penetrate low light transmission film (i.e. photomask), can be by optical concentration OD >=2 (preferably OD >=3, more preferably OD >=
5) film made of film is formed on transparent substrate.
Alternatively, low light transmission portion can also be formed through the low light transmission film of exposure light within the specified scope by being formed.Its
In, within the specified scope through in the case where exposure light, the transmitance T3 (%) in low light transmission portion (here, semi-transparent film with
It is the transmitance of stacking in the case that low light transmission film layer is folded) meet 0 < T3 < T1.Preferably satisfy 0 T3≤20 <.Transmitance T3
The above-mentioned transmitance for representing wavelength when (%) is using the transmitance of transparent substrate as benchmark.
In addition, in the case where such low light transmission film penetrates exposure light with defined transmitance, preferred low light transmission portion
The phase difference through light through light and transmittance sectionFor 90 degree hereinafter, more preferably 60 degree or less." 90 degree or less " are
Refer to, if being indicated with radian, above-mentioned phase difference is " (2n-1/2) π~(2n+1/2) π (here, n is integer) ".With above-mentioned one
Sample is calculated as the phase difference relative to representative wavelength included by exposure light.
In addition, the independent property as low light transmission film used in photomask of the invention, is preferably substantially not through
The above-mentioned light for representing wavelength, or there is transmitance (T2 (%)) (that is, 0 < T2 < 30) and phase offset less than 30 (%)
AmountFor substantially 180 degree.Substantially 180 degree means 120~240 degree.It is preferred that phase differenceIt is 150~210 degree.
Here transmitance is also same as above, and above-mentioned when being set as using the transmitance of transparent substrate as benchmark represents wavelength
Transmitance.
In above-mentioned transfer pattern, when the width of auxiliary patterns is set as d (μm), in width d and this of auxiliary patterns
Between light transmittance T1 in part, when following formula (2) are set up, the excellent effect that can be invented.
Here,It is the factor for the amount for indicating the light through auxiliary patterns (hereinafter, only
The referred to as factor).Formula (2) indicates the suitable range of the above-mentioned factor, if the above-mentioned factor is bigger than 1.5, such as shown in (b) of Fig. 5, resists
The loss for losing the thickness in portion slit (slit) of layer is more than allowed band and becomes larger, if the above-mentioned factor is smaller than 0.5, can not obtain
To enough resolution ratio.At this point, the center of master pattern to be set as to spacing P (μ at a distance from the center of the width direction of auxiliary patterns
M), preferably spacing P meets the relationship of 1.0 P≤5.0 <.It is further preferred that spacing P is 1.5 P≤4.5 <.
In the present invention, auxiliary patterns have doubtfully relative to upper independent master pattern is designed and play intensive pattern
The effect of optical effect as (Dense Pattern), but when meeting above-mentioned relational expression, through master pattern and auxiliary
Exposure light after pattern mutually plays good interaction, can show such excellent shown in aftermentioned embodiment turn
Print performance.
The width d (μm) of auxiliary patterns is under the conditions of exposure (exposure device used) for being applied to photomask of the invention
It is d >=0.7 as specific example, more preferably for resolution limit size below (such as d≤3.0, preferably d≤2.5)
For d >=0.8.Additionally, it is preferred that being d≤W1, more preferably d < W1.
In addition, more preferably above-mentioned relation formula (2) is following formulas (2) -1, further preferably following formula (2) -2.
As described above, the master pattern of photomask shown in FIG. 1 is square, but the present invention is not limited to this.For example,
As indicating citing in Fig. 2, the master pattern of photomask can be the shape of the rotational symmetry including octagon, circle.And
And it can be using the center of rotational symmetry as the center of the benchmark of above-mentioned P.
In addition, the shape of the auxiliary patterns of photomask shown in FIG. 1 is octagon band, but the present invention is not limited to this.
The shape for being preferably shaped to central symmetry 3 times or more the target rotations relative to sectional hole patterns of auxiliary patterns is given a fixed width
The shape of degree.It is preferred that the shape of master pattern and auxiliary patterns is the shape that citing indicates in Fig. 2 (a)~(f), master pattern
Design can also make the different patterns intercombinations of (a)~(f) of Fig. 2 from the design of auxiliary patterns.
For example, citing indicates that the periphery of auxiliary patterns is that square, regular hexagon, octagon, regualr decagon etc. are just more
While shape (be preferably positive 2n while shape, n is 2 or more integer here) or round situation.Moreover, the shape as auxiliary patterns
Shape, the preferably periphery of auxiliary patterns and the substantially parallel shape of inner circumferential, it may be assumed that preferably just polygon with constant width
The shape of shape or circular band.Also the band-like shape is referred to as polygonal band or circular strip.Shape as auxiliary patterns
Shape, such regular polygon band or circular strip are preferably the shape surrounded around master pattern.At this point, because master map can be made
The balance of the light quantity through light through light and auxiliary patterns of case is substantially same, so being easy to get of the invention for obtaining
The interaction of the light of function and effect.
In particular, using photomask of the invention as the photomask of display device manufacture and in the case where use, it may be assumed that
Combining photomask of the invention with the photoresist layer of display device manufacture in the case where use, can reduce in quilt
The resist layer loss of part corresponding with auxiliary patterns on transfer article.
Alternatively, the shape of auxiliary patterns can also be halfway around master pattern around, and above-mentioned polygonal band or circle
The shape of a part shortcoming of shape band.The shape of auxiliary patterns for example can also be the corner of quadrangle band as (f) of Fig. 2
The shape of shortcoming.
As long as other than master pattern of the invention, auxiliary patterns, can also make in addition, not influencing effect of the invention
With other additional patterns.
It is illustrated referring to an example of the Fig. 3 to the manufacturing method of photomask of the invention.
As shown in (a) of Fig. 3, prepare photomask blank.
The photomask blank is sequentially formed with semi-transparent film and low light transmission film on the transparent substrate being made of glass etc., and
And it is coated with the first photoresist.
Semi-transparent film is as follows: in the main surface of transparent substrate, representing wave when any of i line, h line, g line to be used as
When long, transmitance is 30~80 (%) (when T1 (%) is used as transmitance, 30≤T1≤80), more preferably 40~75
(%), and the phase pushing figure of wavelength is represented relative to this as substantially 180 degree.Semi-transparent film in this way, can make by
Between the master pattern of transmittance section composition and the auxiliary patterns being made of semi light transmitting part is substantially 180 degree through light phase difference.This
The semi-transparent film of sample makes the phase of the light of the representative wavelength in i line~g line wave-length coverage substantially deviate 180 degree.As
The film build method of semi-transparent film is able to use method well known to sputtering method etc..
Semi-transparent film preferably satisfies above-mentioned transmitance and phase difference, and as described below as, by being able to carry out
The material of wet etching is constituted.Wherein, because generating CD precision if the amount of the side etching generated in wet etching is excessive
The problems such as destruction of upper layer film caused by variation, undercut (under cut), film thickness ranges preferably fromBelow.
For example,Range, more preferablyHere, CD is Critical
Dimension is used in this specification with the meaning of pattern line-width.
In addition, in order to meet above-mentioned condition, representative wavelength included by the exposure light of semi-transparent membrane material (such as h line)
Refractive index be preferably 1.5~2.9.More preferably 1.8~2.4.
Also, in order to give full play to phase offset effect, the pattern section (being eclipsed facet) preferably generated by wet etching
It is vertically close to transparent substrate main surface.
It, can be by containing any of Zr, Nb, Hf, Ta, Mo, Ti as the membrane material of semi-transparent film when considering above-mentioned property
With the material of Si or the oxide containing above-mentioned material, nitride, nitrogen oxides, carbide or oxidation nitridation carbide
Material is constituted.
Low light transmission film is formed on the semi-transparent film of photomask blank.As film build method, with phase the case where semi-transparent film
It together, can be using means well known to sputtering method etc..
The low light transmission film of photomask blank can substantially be not through exposure light.Or it can be for relative to exposure light
Representative wavelength have defined low transmission film.Low light transmission film is relative to place used in the manufacture of photomask of the invention
There is the transmitance T2 lower than the transmitance T1 (%) of semi-transparent film in the light of the representative wavelength in i line~g line wave-length coverage
(%).
In the case where low light transmission film can penetrate exposure light, it is expected that transmitance of the low light transmission film relative to exposure light
And phase pushing figure can be realized the transmitance and phase pushing figure in the low light transmission portion of photomask of the invention.Preferably exist
Under the laminated arrangement of low light transmission film and above-mentioned semi-transparent film, the transmitance T3 (%) for representing the light of wavelength relative to exposure light is
T3≤20, and phase pushing figureFor 90 (degree) hereinafter, more preferably 60 (degree) below.
As the independent property of low light transmission film, it is preferably substantially not through the above-mentioned light for representing wavelength, or there is deficiency
The transmitance (T2 (%)) (that is, 0 < T2 < 30) of 30 (%), phase pushing figureSubstantially 180 degree.Substantially 180 degree is anticipated
Taste 120~240 degree.It is preferred that phase differenceFor 150~210 (degree).
The material of the low light transmission film of photomask blank is also possible to Cr or its compound (oxide, nitride, carbonization
Object, nitrogen oxides perhaps carbon nitrogen oxygen fluorine neon compound) or it is also possible to the silicide of the metal containing Mo, W, Ta, Ti, Huo Zheye
It can be the above compound of the silicide.Wherein, the material of the low light transmission film of photomask blank can as semi-transparent film
Wet etching is carried out, and preferably there is relative to the material of semi-transparent film the material of etching selectivity.That is, it is desirable to low light transmission
Film has patience for the etchant of semi-transparent film, it is also desirable to semi-transparent film has patience for the etchant of low light transmission film.
The first photoresist is also coated on the low light transmission film of photomask blank.Photomask of the invention preferably by
Laser description device is described, to become the photoresist layer suitable for the laser description device.First photoresist
It can be positive and be also possible to negative film, be illustrated below as positive.
Next, using drawing apparatus to the first photoresist as shown in (b) of Fig. 3, use according to based on transfer
The description of pattern described the data (first describes).Moreover, using by obtained the first corrosion-resisting pattern of development as exposure mask, and it is right
Low light transmission film carries out wet etching.Thus it is divided into the region in low light transmission portion, in addition divides the auxiliary impaled by low light transmission portion
The region of pattern (low light transmission film figure).Etching solution (wet etchant) for carrying out wet etching, which is able to use, to be suitable for making
The well known etching solution of the composition of low light transmission film.For example, being then used as wet etchant energy if it is the film containing Cr
Enough using ammonium ceric nitrate etc..
Next, the first corrosion-resisting pattern is removed as shown in (c) of Fig. 3.
Next, as shown in (d) of Fig. 3, it is photic anti-in the entire surface coating second of the low light transmission film figure including being formed
Lose film.
Next, carrying out second as shown in (e) of Fig. 3 to the second photoresist and describing, formed and formed by development
The second corrosion-resisting pattern.Using second corrosion-resisting pattern and above-mentioned low light transmission film figure as exposure mask, and carry out the wet of semi-transparent film
Formula etching.The region for the master pattern being made of the transmittance section of exposing transparent substrate is formed by the etching (development).In addition, the
Two corrosion-resisting patterns are preferably to cover the region for becoming auxiliary patterns and have in the region for becoming the master pattern being made of transmittance section
The pattern of opening, and progress is described the data relative to the second description in such a way that the edge of low light transmission film exposes from the opening
Gluing.It misplaces in such manner, it is possible to absorb the alignment mutually generated between first describes and second describes, so as to prevent from transferring
It is deteriorated with the CD precision of pattern.
That is, the gluing of the second corrosion-resisting pattern when being described by carrying out second like this, thus when will be on transfer printing body
When forming independent sectional hole patterns, because the patterning between photomask and semi-transparent film does not generate positional shift, pass the imperial examinations at the provincial level in Fig. 1
In the transfer pattern that example indicates, the center of gravity of master pattern and auxiliary patterns can be made accurately consistent.
The wet etchant of semi-transparent film is properly selected according to the composition of semi-transparent film.
Next, removing the second corrosion-resisting pattern as shown in (f) of Fig. 3, and completes light of the invention shown in FIG. 1 and cover
Mould.
In the manufacture of display device photomask, when carrying out figure to optical films such as the photomasks being formed on transparent substrate
When case, as applicable etching, there are dry-etching and wet etching.It is ok using any, but wet in the present invention
Formula etching is particularly advantageous.This is because the size of the photomask of display device is bigger, and there are sizes.It is making
When making such photomask, if size, manufacturing process side using the dry-etching of vacuum chamber, in dry-etching device
Face generation efficiency is low.
Wherein, also there is adjoint project using wet etching when manufacturing such photomask.Because wet etching has
The property of isotropic etching, so etching also Xiang Yushen when defined film is etched and be dissolved out along depth direction
The vertical direction in direction is spent to carry out.For example, becoming etching when being etched to the semi-transparent film of film thickness F (nm) and form slit
The small 2F of slit width desired by the aperture efficiency of the corrosion-resisting pattern of exposure mask (nm) (that is, unilateral small F (nm)), but minute widths
Slit, the dimensional accuracy for being more difficult to maintain corrosion-resisting pattern to be open.Therefore, the width d of auxiliary patterns is 1 μm or more, preferably
1.3 μm or more are useful.
In addition, because side etching amount also becomes larger, even if film thickness is small, making in the case where above-mentioned film thickness F (nm) is big
It is also advantageous with the membrane material with the substantially phase pushing figure of 180 degree, as a result, wishing semi-transparent film relative to the wavelength
Refractive index it is high.Therefore, using relative to the above-mentioned refractive index for representing wavelength as 1.5~2.9 material, preferably 1.8~2.4
Material, preferably semi-transparent film.
The present invention includes the manufacturing method of display device, and the manufacturing method of display device is including the use of exposure device to above-mentioned
Photomask of the invention be exposed and the process that is transferred to above-mentioned transfer with pattern on transfer printing body.
For the manufacturing method of display device of the invention, prepare above-mentioned photomask of the invention first.Next, making
With numerical aperture (NA) be 0.08~0.20 and have including i line, h line, g line exposure light source exposure device, will be above-mentioned
Transfer pattern exposure forms the sectional hole patterns that diameter W2 is 0.6 μm~3.0 μm on transfer printing body.Exposure generally uses equimultiple
Exposure, is advantageous.
It is to carry out equimultiple as exposure machine used when being transferred to transfer with pattern using photomask of the invention
Projection exposure mode exposure machine, device below can be enumerated.That is, be as LCD with (or FPD use, liquid crystal
With) and the exposure machine that uses, the numerical aperture (NA) for consisting of optical system is that 0.08~0.15 (coherence factor (σ) is 0.4
~0.9), there is the light source (also referred to as wide wavelength source) including i line, h line and at least one exposure light in g line.Wherein,
Even if certainly in the exposure device that numerical aperture NA is 0.10~0.20 using the present invention and invention effect can also be obtained.
In addition, deformation illumination (annular illumination etc.) also can be used in the light source of the exposure device used, even if being non-change
Shape illuminates the excellent effect that can be also invented.
The present invention includes the photomask blank for manufacturing above-mentioned photomask of the invention.Specifically, of the invention
Photomask blank is laminated with semi-transparent film and low light transmission film on the transparent substrate.And etchant resist can also be coated.
The physical property of semi-transparent film and low light transmission film, film quality and composition are as described above.
That is, the semi-transparent film of photomask blank of the invention is relative to the representative wave in i line~g line wave-length coverage
Long transmitance T1 is 30~80 (%).Above-mentioned semi-transparent film is 1.5~2.9 relative to the above-mentioned refractive index for representing wavelength, and
The film thickness of phase pushing figure with substantially 180 degree.The film thickness of semi-transparent film with such refractive index is even if very thin
With desired phase pushing figure, so as to shorten the wet etching time of semi-transparent film.As a result, it is possible to inhibit semi-transparent
The side etching of light film.
The low light transmission film of photomask blank of the invention represents the transmitance of wavelength than above-mentioned semi-transparent film relative to this
It is small.The low light transmission film is substantially not through the above-mentioned light for representing wavelength, or with the transmitance less than 30% and substantially 180 degree
Phase pushing figure.
[embodiment]
For the photomask of 3 kinds shown in Fig. 4 (comparative example 1-1,1-2 and embodiment 1), compared by optical analog
Its transfer performance, and evaluated.That is, on transfer printing body, for having turning for the sectional hole patterns for being used to form 2.0 μm of diameter
Print 3 photomasks of pattern, for the transfer performance indicated how, have carried out optics after commonly setting conditions of exposure
Simulation.
(comparative example 1-1)
As shown in figure 4, the photomask of comparative example 1-1 have be made of the shading film figure formed on the transparent substrate,
The pattern of so-called binary mask.In the photomask of comparative example 1-1, the master map that is made of the transmittance section of exposing transparent substrate
Case is impaled by light shielding part.The diameter W1 (square one side) of master pattern is 2.0 (μm).
(comparative example 1-2)
As shown in figure 4, the photomask of comparative example 1-2 is by being 5% and phase to exposure light light transmittance (to h line)
Offset is that the semi-transparent film of 180 degree is patterned and formed, and has four by one side (diameter) (i.e. W1) for 2.0 (μm)
The master pattern that the transmittance section of side shape is constituted, is half-tone type phase shift mask.
(embodiment 1)
As shown in figure 4, the photomask of embodiment 1 has transfer pattern of the invention.Here, master pattern is (straight on one side
Diameter) (i.e. W1) be 2.0 (μm) square, auxiliary patterns are the octagon band that width d is 1.3 (μm), master pattern center with it is auxiliary
It helps the distance of the widthwise central of pattern that is, spacing P is 4 (μm).
Auxiliary patterns are formed by forming semi-transparent film on the transparent substrate.The exposure light of the semi-transparent film (to h line)
Transmitance T1 is 70 (%), and phase pushing figure is 180 degree.In addition, surrounding the low light transmission portion essence of master pattern and auxiliary patterns
On be made of the photomask (OD > 2) for being not through exposure light.
For any one of the photomask of ratio 1-1,1-2 and embodiment 1, diameter is all formed on transfer printing body
W2 is 2.0 μm of (W1=W2.That is, the master pattern of the diameter W2 being formed on transfer printing body and the transfer pattern with photomask
Diameter W1 it is identical.) sectional hole patterns.The conditions of exposure used in simulations is as follows.That is, exposure light is line containing i, h line, g line
Wide wavelength, intensity ratio be g:h:i=1:0.8:1.
The NA of the optical system of exposure device is 0.1, and coherence factor σ is 0.5.What is formed on transfer printing body is used to obtain
The film thickness of the positive photoresist layer of the section shape of corrosion-resisting pattern is 1.5 μm.
Under the above conditions, the performance evaluation of each transfer pattern is as shown in Figure 4.In addition, formed on transfer printing body
The aerial image of luminous intensity and the section shape for being formed by corrosion-resisting pattern are as shown in Figure 5.
(optical assessment of photomask)
For example, being needed for the small light-transparent pattern small for transfer diameter through the exposure light after photomask
The aerial image that is formed on transfer printing body, i.e. must be good through the profile of light intensity.Luminous intensity is penetrated specifically, being formed
Peak value inclination it is precipitous and close to vertically rising and the absolute value of the luminous intensity of peak value is high (is formed with sub- peak around
It is sufficiently high relative to the intensity in the case where value) etc. be very important.
When further quantitatively evaluating according to optical property photomask, it is able to use following indexs.
(1) depth of focus (DOF)
Size relative to target CD, for the depth of focus in the range of becoming ± 10%.If the numerical value of DOF is high,
It is then not readily susceptible to the influence of the flatness of transfer printing body (such as display panel substrate of display device), can be reliably formed micro-
Small pattern, to inhibit the CD deviation.
(2)MEEF(Mask Error Enhancement Factor)
It is the numerical value for indicating Mask CD error with the ratio of the CD error of the pattern formed on transfer printing body, MEEF is got over
It is low, it can more reduce the CD error of the pattern formed on transfer printing body.
(3)Eop
In the photomask of display device manufacture, there is Eop being especially important in assessment item.It is in order in quilt
Exposure light amount necessary to obtained pattern dimension is formed on transfer article.Because of photomask size in display device manufacture
(for example, main surface is on one side the square or rectangle of 300~1400mm or so) greatly, so if low using Eop numerical value
Photomask, then can be improved the speed of scan exposure, and improve production efficiency.
In conclusion when the performance of each sample to simulated object is evaluated, as shown in Figure 4, embodiment 1
The depth of focus (DOF) of photomask is extended to 55 μm with first-class, is very excellent point compared with comparative example, indicates the steady of pattern
Fixed transferability.This also means that the CD precision of the small and small pattern of the value of MEEF is high.
Also, the value of the Eop of the photomask of embodiment 1 is very small.This is expressed as follows advantage: in the photomask of embodiment 1
In the case where, it is manufactured even for the display device of large area, the time for exposure does not also increase, or can shorten.
In addition, when referring to Figure 5 through the aerial image of luminous intensity, it is thus understood that in the feelings of the photomask of embodiment 1
Under condition, the grade (Eth) of the threshold value photosensitive relative to resist layer is become can be improved the peak value in master pattern portion, which inclines
It tiltedly also fully erects (close to vertical with the surface of transfer printing body).Compared with being compared in this regard with comparative example 1-1,1-2
It is excellent.Here, enhanced by will transmit through the luminous intensity of the light of auxiliary patterns for master pattern position, the increase of Lai Shixian Eop and
The reduction of MEEF.In addition, in the photomask of embodiment 1, although producing side in the two sides of the transferred image position of master pattern
Peak value, but because be Eth hereinafter, the transfer for master pattern does not influence.
In addition, being illustrated below for the method for the loss for reducing resist residual film caused by the side peak value.
The design for changing the transfer pattern formed in photomask, uses comparative example 2-1 shown in fig. 6, comparative example
2-2 and the sample of embodiment 2 are simulated.Here, 2.5 (μm) are set in the diameter W1 of the master pattern of each sample
Point on, it is different from above-mentioned sample (comparative example 1-1, comparative example 1-2 and embodiment 1).
(comparative example 2-1)
As shown in fig. 6, the photomask of comparative example 2-1 be made of the shading film figure formed on the transparent substrate, institute
The pattern of the binary mask of meaning.In the photomask of comparative example 2-1, the master pattern that is made of the transmittance section of exposing transparent substrate
It is impaled by light shielding part.The diameter W1 (square one side) of the master pattern is 2.5 (μm).
(comparative example 2-2)
As shown in fig. 6, the photomask of comparative example 2-1 is half-tone type phase shift mask, by exposure light light transmission
Rate (to h line) is 5% and phase pushing figure is that the semi-transparent film of 180 degree is patterned and formed, and is had by master pattern
Diameter W1 (square one side) is the master pattern that the transmittance section of the quadrangle of 2.5 (μm) is constituted.
(embodiment 2)
As shown in fig. 6, the photomask of embodiment 2 is transfer pattern of the invention.The master pattern of the photomask of embodiment 2
The diameter W1 (square one side) for being master pattern is the square of 2.5 (μm), and auxiliary patterns are eight that width d is 1.3 (μm)
Side shape band, master pattern center is at a distance from the widthwise central of auxiliary patterns that is, spacing P is 4 (μm).
Using the photomask of comparative example 2-1, comparative example 2-2 and embodiment 2, forming diameter on transfer printing body is
2.0 μm of sectional hole patterns.That is, the exposure mask biasing (β=W1-W2) of these photomasks is set as 0.5 (μm).It applies in simulations
The case where conditions of exposure is with above-mentioned comparative example 1-1,1-2 and the photomask of embodiment 1 is identical.
From data shown in fig. 6 it can be appreciated that using embodiment 2 photomask in the case where, show excellent DOF,
MEEF and the advantageous performance compared with comparative example 2-1,2-2.In the photomask of embodiment 2, especially DOF becomes super
Cross 35 μm of numerical value.
In addition, as shown in fig. 7, when referring to the corrosion-resisting pattern section shape on the aerial image and transfer printing body through luminous intensity
When, characteristic possessed by the sample of embodiment 2 further becomes apparent.As shown in fig. 7, in the photomask for having used embodiment 2
In the case where, peak value corresponding with master pattern is higher than the side peak value for being formed in two sides very more, does not generate resist layer damage substantially.
According to the above results, understood in the case where being transferred using the pattern of photomask of the invention, it is inclined in exposure mask
Setting β is 0.5 (μm) left and right, specifically in the transfer pattern in the range of 0.2~1.0 (μm), it is easier to for practical,
It can obtain excellent transferred image.
By described above, it is thus identified that the excellent performance of photomask of the invention.If especially using light of the invention
Mask, then in 2 μm of small patterns below, can obtain MEEF is 2.5 numerical value below, this fills the display in future
Set the significant of manufacture.
The purposes of photomask of the invention is not particularly limited.Photomask of the invention preferably includes liquid crystal display in manufacture
It is used when the manufactures of display devices such as device, EL display device.
Photomask according to the present invention controls interfering for the exposure light for penetrating master pattern and auxiliary patterns both sides,
Zero order light can be reduced in exposure, make the ratio of ± 1 grade of light is opposite to increase.Therefore, the space through light can be greatly improved
Picture.
As the purposes that can advantageously result in such function and effect, in order to formed be chiefly used in liquid crystal, EL device connects
The independent sectional hole patterns such as contact hole and be advantageous using photomask of the invention.It is called as the type of pattern, usually difference
For made and arranging multiple patterns with certain systematicness intensive (Dense) pattern made of their mutual optical effects,
There is no the independent pattern of the pattern of the arrangement of such rule with surrounding.Photomask of the invention, which is suitably applied, to be turned
Print the case where independent pattern is formed on body.
Within the scope of the effect of the invention, additional optical film, function also can be used in photomask of the invention
It can film.For example, light transmittance possessed by low light transmission film brings the bad of obstruction to the position detection of inspection, photomask in order to prevent
Situation, and photomask can also be formed with the region other than pattern in transfer.In addition, in semi-transparent film, it can also be at it
Surface setting is for reducing the antireflection layer for describing the reflection of light, exposure light.Also, semi-transparent film can also be transparent at its
It is the low reflection layer for inhibiting backside reflection that substrate-side, which has purpose,.
Claims (8)
1. a kind of photomask is the photomask of display device manufacture, with transfer pattern, the transfer with pattern by pair
Form a film on transparent substrate semi-transparent film and photomask patterned and formed respectively, the feature of the photomask exists
In,
For using the exposure device with the numerical aperture NA optical system for being 0.08~0.20 to be exposed, thus being turned
Independent sectional hole patterns are formed on print body,
The semi-transparent film makes 150~210 degree of light shift of the representative wavelength in i line~g line wave-length coverage, and has
Having relative to the transmitance T1 for representing wavelength, wherein the unit of T1 is %,
For the photomask relative to the light for representing wavelength, optical concentration OD is 3 or more,
The transfer is included with pattern
Master pattern, which is made of the transmittance section for exposing the transparent substrate and diameter is W1, wherein the unit of W1 is μ
m；
Auxiliary patterns, the auxiliary patterns are configured near the master pattern, by being formed with described half on the transparent substrate
The semi light transmitting part of light-transmissive film is constituted and width is d, and wherein the unit of d is μm；And
Light shielding part, the light shielding part be configured at the transfer pattern, formed other than the master pattern and the auxiliary patterns
Region, and at least formed with the photomask on the transparent substrate,
The auxiliary patterns have the shape of regular polygon band or circular strip, and surround around the master pattern,
When the center of the master pattern is set as P at a distance from the center of the width direction of the auxiliary patterns, wherein the list of P
Position for μm,
Meet following formula (1), (2), (5) and (6),
0.8≤W1≤3.0 ···(1)
30≤T1≤80 ···(5)
1.0<P≤5.0 ···(6)。
2. photomask according to claim 1, which is characterized in that
The width d of the auxiliary patterns meets d≤W1.
3. photomask according to claim 1 or 2, which is characterized in that
The transfer pattern and the master pattern accordingly, form the sectional hole patterns of diameter W2, wherein W1 > on transfer printing body
W2。
4. photomask according to claim 3, which is characterized in that
It is set as biasing when by the difference W1-W2 of the diameter W2 on the diameter W1 of the master pattern and the transfer printing body
β, when wherein the unit of β is μm, 0.2≤β≤1.0.
5. photomask according to claim 1 or 2, which is characterized in that
The transmittance section exposes the transparent substrate,
The semi light transmitting part is formed and forming the semi-transparent film on the transparent substrate,
The light shielding part is formed and the semi-transparent film and the photomask are laminated on the transparent substrate.
6. photomask according to claim 1 or 2, which is characterized in that
The semi-transparent film is by the material containing any of Zr, Nb, Hf, Ta, Mo, Ti and Si or containing the oxidation of above-mentioned material
The material composition of object, nitride, nitrogen oxides, carbide or oxidation nitridation carbide.
7. a kind of manufacturing method of photomask, is the manufacturing method of the photomask of display device manufacture, the photomask has
Be formed in transparent substrate and for by using with numerical aperture NA be 0.08~0.20 optical system exposure device into
Row exposes the transfer pattern that independent sectional hole patterns are formed on transfer printing body,
The manufacturing method of the photomask is characterized in that, comprising:
Prepare to be laminated semi-transparent film and photomask on the transparent substrate and then form the light of the first photoresist and covers
The process of mold base material；
The first description based on the defined transfer pattern is carried out to first photoresist, and passes through development
The process for forming the first corrosion-resisting pattern；
Using first corrosion-resisting pattern as exposure mask, wet etching is carried out to form the work of shading film figure to the photomask
Sequence；
First corrosion-resisting pattern is removed and forms the second photoresist in the entire surface including the shading film figure
The process of film；
Second process described and form the second corrosion-resisting pattern by development is carried out to second photoresist；And
The work of wet etching is carried out to the semi-transparent film using second corrosion-resisting pattern and the shading film figure as exposure mask
Sequence,
The semi-transparent film makes 150~210 degree of light shift of the representative wavelength in i line~g line wave-length coverage, and has
Having relative to the transmitance T1 for representing wavelength, wherein the unit of T1 is %,
For the photomask relative to the light for representing wavelength, optical concentration OD is 3 or more,
The transfer is included with pattern
Master pattern, which is made of the transmittance section for exposing the transparent substrate and diameter is W1, wherein the unit of W1 is μ
m；
Auxiliary patterns, the auxiliary patterns are configured near the master pattern, by being formed with described half on the transparent substrate
The semi light transmitting part of light-transmissive film is constituted, and width is d, wherein the unit of d is μm；And
Light shielding part, the light shielding part be configured at the transfer pattern, formed other than the master pattern and the auxiliary patterns
Region, and at least formed with the photomask on the transparent substrate,
The auxiliary patterns have the shape of regular polygon band or circular strip, and surround around the master pattern,
When the center of the master pattern is set as P at a distance from the center of the width direction of the auxiliary patterns, wherein the list of P
Position for μm,
Meet following formula (1), (2), (5) and (6),
0.8≤W1≤3.0 ···(1)
30≤T1≤80 ···(5)
1.0<P≤5.0 ···(6)。
8. a kind of manufacturing method of display device characterized by comprising
Prepare the process of photomask described in claims 1 or 2；With
Using numerical aperture NA be 0.08~0.20 and have including i line, h line, g line exposure light source exposure device pair
The transfer is exposed with pattern, to form the work for the sectional hole patterns that diameter W2 is 0.6 μm~3.0 μm on transfer printing body
Sequence.
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| CN201910982223.5A CN110673436B (en) | 2014-07-17 | 2015-07-16 | Photomask, method for manufacturing photomask, and method for manufacturing display device |
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| JP2014-146847 | 2014-07-17 | ||
| JP2014146847A JP6581759B2 (en) | 2014-07-17 | 2014-07-17 | Photomask, photomask manufacturing method, photomask blank, and display device manufacturing method |
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| JP (1) | JP6581759B2 (en) |
| KR (3) | KR101837247B1 (en) |
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| JP6259509B1 (en) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | Halftone mask, photomask blank, and method of manufacturing halftone mask |
| JP6808665B2 (en) * | 2017-03-10 | 2021-01-06 | Hoya株式会社 | Photomask for manufacturing display devices and manufacturing method for display devices |
| JP7080070B2 (en) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | Manufacturing method of photomask and display device |
| JP6964029B2 (en) * | 2017-06-06 | 2021-11-10 | Hoya株式会社 | Manufacturing method of photomask and display device |
| TWI659262B (en) * | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
| TWI691608B (en) | 2017-09-12 | 2020-04-21 | 日商Ｈｏｙａ股份有限公司 | Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device |
| JP7383490B2 (en) | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | photo mask |
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| TW201816503A (en) | 2018-05-01 |
| KR20200120599A (en) | 2020-10-21 |
| KR101837247B1 (en) | 2018-03-09 |
| CN110673436A (en) | 2020-01-10 |
| TWI651585B (en) | 2019-02-21 |
| JP2016024264A (en) | 2016-02-08 |
| KR102168149B1 (en) | 2020-10-20 |
| CN105319831A (en) | 2016-02-10 |
| TWI690770B (en) | 2020-04-11 |
| CN110673436B (en) | 2023-10-27 |
| JP6581759B2 (en) | 2019-09-25 |
| TW201604643A (en) | 2016-02-01 |
| TW201921091A (en) | 2019-06-01 |
| TWI621907B (en) | 2018-04-21 |
| KR102195658B1 (en) | 2020-12-28 |
| KR20170117987A (en) | 2017-10-24 |
| KR20160010322A (en) | 2016-01-27 |
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