CN106324977A - Photomask, method for designing photomask, photomask blank, and method for manufacturing display device - Google Patents
Photomask, method for designing photomask, photomask blank, and method for manufacturing display device Download PDFInfo
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- CN106324977A CN106324977A CN201610423251.XA CN201610423251A CN106324977A CN 106324977 A CN106324977 A CN 106324977A CN 201610423251 A CN201610423251 A CN 201610423251A CN 106324977 A CN106324977 A CN 106324977A
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- Prior art keywords
- photomask
- phase
- phase shift
- line
- shift film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
The present invention provides a photomask capable of forming a resist pattern having an advantageous shape at the time of transfer of a pattern and exhibiting excellent transferability, a method of manufacturing the photomask, a method for designing the photomask, a photomask blank, and a method for manufacturing a display device. The photomask has a transfer pattern including a patterned phase shift film on the transparent substrate. The transfer pattern includes a phase shift portion on which the phase shift film is formed on the transparent substrate, and a transparent portion exposed from the transparent substrate. Assuming that the phase shift film has a phase shift amount (g) of [phi]g for the g-line, a phase shift amount (g) of [phi]h for the h-line, phase shift amount (g) of [phi]i for the i-line, then [phi]i is greater than [phi]g; among [phi]g, [phi]h, [phi]i, [phi]g is most approximate to 180 degrees.
Description
Technical field
The present invention relates to a kind of photomask on the transparent substrate with transfer pattern.Particularly relate to beneficially manufacture
The photomask of display device, the manufacture method of this photomask, the method for designing of this photomask, cover for the light manufacturing this photomask
Mold base material, the method using this photomask manufacture display device.
Background technology
According to patent documentation 1, it is proposed that when being used for manufacturing FPD (flat faced display) equipment, use and be etched with phase successively
Bit reversal film and the photomask of photomask pattern.
Herein, describing the photomask with phasing back film, this photomask relates to following problems: manufacture FPD being used for
In the photomask of equipment, in order to improve the resolution of pattern, if the wavelength of light source being shortened and making lens maximize, then lens
Focal depth reduces, and there is boundary for obtaining the resolution of the pattern of practicality.And, it is desirable to phasing back film is for i
Line, h line, the phase contrast deviation of g line are less than 10 °.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2012-230379 publication
Summary of the invention
Invent problem to be solved
At present, in comprising the display device such as liquid crystal indicator, EL display device, it is desirable to same in brighter and power saving
The raising of the display performances such as Shi Shixian fine, at a high speed display, wide viewing angle.
Such as, for thin film transistor (TFT) (Thin Film Transistor, " TFT ") used in above-mentioned display device
Speech, is constituted in the plural pattern of TFT substrate, reliably connects if the contact hole being formed at interlayer dielectric does not have
The effect of the pattern of layer and lower floor, then cannot ensure action accurately.On the other hand, in order to increase opening of display device as far as possible
Mouthful rate and make bright, the display device of power saving, it is desirable to the aperture of contact hole is sufficiently small.Accompany with this, be used for being formed such
The aperture of the sectional hole patterns that the photomask of contact hole is possessed is also desirable that miniaturization (e.g., less than 4 μm).Such as needing aperture is 2.5
Below μm, further aperture be the sectional hole patterns of below 2.0 μm, it is believed that in the near future, also it is desirable to formed have less
The pattern in aperture below 1.5 μm.Based on such background, it is desirable to be able to reliably transfer the display device manufacture in Minor contact hole
Technology.
In the field of lithography of display device manufacture, as the LCD NA (number of known exposure devices such as (or FPD use)
Value aperture) it is 0.08～about 0.10, exposure light source is also used mostly the wide wavelength region comprising i line, h line, g line, thus real
The highest production efficiency, favourable cost.
But, in the field of lithography of display device manufacture as above, the miniaturization of pattern requires the most than ever
Higher.The present inventor attempts to solve following problem: stably carry out finer in the case of not making the deterioration of productivity, cost
The manufacture of display device.
Above-mentioned patent documentation 1 utilizes, when using phasing back film in optical mask pattern, at phasing back film
Border dry improve resolution by the counteracting of exposure light.Expect according to for i line, h line, g line phase contrast close
The mode of 180 ° forms phasing back film, but inevitably phase contrast is different because of the difference of wavelength, it is therefore desirable for the greatest extent may be used
The phase contrast deviation for exposing light can be reduced.Further, in the case of being somebody's turn to do, for the exposure light of any one wavelength, phasing back is made
The phase contrast of film is 180 ° and is advisable.
But, in order to reduce phase contrast deviation as far as possible, need exploitation to have the membrane material of this physical property, the spy of this material
Rope is not easy to.
Therefore, it is an object of the invention to obtain a kind of photomask, it can form advantageous shape when the transfer of pattern
Resist patterns and demonstrate the transferability of excellence, in order to realize this purpose, the inventors discovered that a kind of photomask, even if making
The transfer of excellent in resolution can also be carried out with the membrane material with phase contrast deviation, further investigate as problem, from
And complete the present invention.
For solving the means of problem
The composition 1 of the present invention is a kind of photomask, and it is to possess on the transparent substrate to comprise patterned phase shift film
The photomask of transfer pattern, it is characterised in that
Above-mentioned transfer pattern is included in phase shift portion and the above-mentioned transparency carrier dew forming phase shift film on above-mentioned transparency carrier
The transmittance section gone out,
If phase-shift phase (spending) that above-mentioned phase shift film has, for g line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for h line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for i line isTime,
Meet
Further, theseIn, closest to the values of 180 degree it is
The composition 2 of the present invention is the photomask of composition 1, it is characterised in that set that above-mentioned phase shift film has, for g line
When transmitance is Tg (%), then 3 < Tg < 15.
The composition 3 of the present invention is the photomask of composition 1 or 2, it is characterised in that set that above-mentioned phase shift film has, for g line
Transmitance be Tg (%), transmitance for i line is when being Ti (%), then Ti < Tg.
The composition 4 of the present invention is for constituting the photomask any one of 1～3, it is characterised in that above-mentioned transfer pattern comprises
Aperture is the isolated sectional hole patterns of below 4 μm.
The composition 5 of the present invention is for constituting the photomask any one of 1～4, and wherein, above-mentioned photomask is that application comprises i line
～the light of the wavelength region of g line is as the photomask of exposure light.
The composition 6 of the present invention, for constituting the photomask any one of 1～5, wherein, above-mentioned transparency carrier is further equipped with
Patterned photomask.
The composition 7 of the present invention is for constituting the photomask any one of 1～6, and wherein, above-mentioned photomask possesses display device system
The transfer pattern made.
The composition 8 of the present invention is a kind of photomask blank, and it is the photo blanks being formed with phase shift film on the transparent substrate
Material, this photomask blank is for making photomask by above-mentioned phase shift film patterning is formed transfer pattern, and it is special
Levy and be,
If phase-shift phase (spending) that above-mentioned phase shift film has, for g line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for h line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for i line isTime,
Then meet
Further, theseIn, closest to the values of 180 degree it is
The composition 9 of the present invention be constitute 8 photomask blank, wherein, if above-mentioned phase shift film has, saturating for g line
When the rate of mistake is Tg (%), then 3 < Tg < 15.
The composition 10 of the present invention is the photomask blank of composition 8 or 9, it is characterised in that it is that above-mentioned phase shift film has, right to set
When transmitance in g line is Tg (%), transmitance for i line is Ti (%), then Ti < Tg.
The composition 11 of the present invention is for constituting the photomask blank any one of 8～10, it is characterised in that this photomask blank
For manufacturing the light photomask as exposure light of the wavelength region that application comprises i line～g line.
The composition 12 of the present invention is for constituting the photomask blank any one of 8～11, wherein, at above-mentioned phase shift film enterprising
Step is formed with photomask.
The manufacture method that composition 13 is a kind of photomask of the present invention, it has:
The operation of the photomask blank according to any one of composition of preparation 8～12；With
Patterned by the above-mentioned phase shift film making above-mentioned photomask blank have and form the operation of transfer pattern.
The method for designing that composition 14 is a kind of photomask of the present invention, its for possess on the transparent substrate comprise patterned
The method for designing of photomask of transfer pattern of phase shift film, this method for designing is characterised by,
Above-mentioned photomask has the exposure light of intensity peak in plural wavelength for utilizing, and above-mentioned transfer is used
Pattern is transferred on transfer printing body,
Above-mentioned transfer pattern is included in and is formed with the phase shift portion of phase shift film and above-mentioned transparency carrier on above-mentioned transparency carrier
The transmittance section exposed,
Transmitance that if above-mentioned phase shift film has, for g line is Tg (%),
Then 3 < Tg < 15,
Further, if the wavelength being in the light of long wavelength side in wavelength more than above-mentioned two be α, the above ripple of above-mentioned two
Any wavelength being in the wavelength side shorter than α in length is β,
If the phase-shift phase of the above-mentioned phase shift film in this wavelength α isThe phase-shift phase of the above-mentioned phase shift film in above-mentioned wavelength β isTime, then meet
Further, physical property and the thickness of above-mentioned phase shift film are selected so that above-mentionedWith the difference of 180 degree less than above-mentionedWith 180
Difference.
The manufacture method that composition 15 is a kind of display device of the present invention, it is for including using exposure device to be had by photomask
The manufacture method of the display device of the operation that some transfer patterns are transferred on transfer printing body, the manufacture method of this display device
The operation of above-mentioned transfer comprise above-mentioned transfer pattern be radiated in two or more wavelength the exposure light containing intensity peak,
It is characterized in that,
Above-mentioned photomask possesses the transfer pattern making phase shift film pattern on the transparent substrate,
Above-mentioned transfer pattern comprises phase shift portion and the above-mentioned transparency carrier dew being formed with phase shift film on above-mentioned transparency carrier
The transmittance section gone out,
Transmitance that if above-mentioned phase shift film has, for g line is Tg (%),
Then 3 < Tg < 15,
Further, if the wavelength being in the light of long wavelength side in above-mentioned two wavelengths above be α, above-mentioned two wavelengths above
In to be in any wavelength of the wavelength side shorter than α be β,
If the phase-shift phase of the above-mentioned phase shift film in this wavelength α isThe phase-shift phase of the above-mentioned phase shift film in above-mentioned wavelength β isTime, then meet
Further, use has above-mentionedWith the difference of 180 degree less than above-mentionedSuch physical property and thickness with the difference of 180 degree
Phase shift film, form above-mentioned transfer pattern.
Invention effect
In accordance with the invention it is possible to obtain a kind of photomask, it can form the against corrosion of advantageous shape when the transfer of pattern
Agent pattern and demonstrate excellence transferability.
Accompanying drawing explanation
Fig. 1 is the photomask of cross section and the transfer for this sectional hole patterns illustrating the resist film transferred with sectional hole patterns
Figure.
Fig. 2 is light intensity when being exposed of the sectional hole patterns to the photomask shown in Fig. 1.
Fig. 3 is to illustrate that ILS, contrast are along with the curve chart of the change of the phase-shift phase when thickness of phase shift film and this thickness.
Fig. 4 is to illustrate that ILS, contrast are along with the curve chart of the change of the transmitance when thickness of phase shift film and this thickness.
Detailed description of the invention
The photomask of the present invention is the light of the transfer pattern possessing on the transparent substrate and comprising patterned phase shift film
Mask.Further, above-mentioned transfer pattern is included in and is formed with the phase shift portion of phase shift film and above-mentioned transparent base on above-mentioned transparency carrier
The transmittance section that plate exposes.
Further,
If phase-shift phase (spending) that above-mentioned phase shift film has, for g line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for h line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for i line isTime,
Then meet
Further, theseIn, closest to the values of 180 degree it isIt should be noted that in this application, "
Value close to 180 degree " comprise the situation equal to 180 degree.
As transparency carrier used in the photomask of the present invention, it is possible to use by smooth for the transparent materials such as glass, smooth
Be ground and the substrate that obtains.As the photomask of display device manufacture, preferably first type surface is more than 300mm
Tetragon.
The transfer pattern that the photomask of the present invention is possessed possess be formed on the transparent substrate phase shift film phase shift portion,
The transmittance section exposed with transparency carrier surface.
Such photomask (also referred to as phase shifting mask) makes the phasing back (180 degree of skews) of the light through phase shift portion, profit
With the dry effect of the light becoming phase reversal, reduce the light intensity in phase shift portion and the vicinity, border of transmittance section.Further, it is wanted
Impact is brought to improve resolution by the light intensity distributions being subject to transfer printing body.The transmitance of the exposure light that phase shift portion has
When T (%) is too low, the raising effect of resolution based on phase shift portion is tended to reduce.Additionally, the exposure light that phase shift portion has
When transmitance T (%) is too high, the loss of resist thickness described later is tended to become notable.In view of these aspects, preferably 3 < T
<15.Such as during the phase shift film using the transmitance for g line to be Tg (%), 3 < Tg < 15 can be set.
On the other hand, in the exposure device for display device manufacture, use the exposure comprising plural wavelength
Light light (the widest wavelength light).Example is as used in i line (wavelength 365nm), h line (wavelength 405nm), g line (wavelength 436nm) tool
There are peak value, exposure light with ultrahigh pressure mercury lamp as light source, it is possible to effectively the photomask that area is big is exposed.
But, exposure light comprises under the situation of plural wavelength, all makes phase place correct for these arbitrary wavelength
Reversion (i.e. so that it is 180 degree of phase shifts), this is difficult for having the phase shifting mask of single phase shift film.It is therefore advantageous that
Even if in view of in phase shift film, (specifically, even if described above phase-shift phase changes because of the wavelength of light),
It also is able to the photomask obtaining that there is excellent transferability.
It should be noted that in the present invention, if transmitance that phase shift film has, for g line be Tg (%), for i
When the transmitance of line is Ti (%), then preferably Ti < Tg.
Exist and meet phase shift film material such condition, excellent.
It is further preferred that set further that phase shift film has, for the transmitance of h line as Th (%) time, then Ti < Th < Tg.
The present inventor uses such material, to for can with sufficient CD (Cristal Dimension) precision and
The method of stability replicated fine pattern is studied.
In the photomask of the present invention,
If phase-shift phase (spending) that above-mentioned phase shift film has, for g line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for h line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for i line isTime,
TheseIn, closest to the values of 180 degree it isIt should be noted that as it has been described above, " closest to 180
The value of degree " comprise the situation equal to 180 degree.
That is, the photomask of the present invention has following phase shift film: compared to i line, h line, this phase shift film is for i line, h line, g line
In have more 180 degree or phase shift effect close to 180 degree for the g line of long wavelength side.In other words, find to proceed as follows light
The design of mask is favourable: in the design of this photomask, for using wide wavelength light for the photomask of exposure, with
On the basis of the wavelength of the long wavelength side g line of long wavelength side (in the peak value herein having for exposure light) so that it is have 180 degree,
Or the phase-shift phase closest to 180 degree.
Hereinafter, as wide wavelength light, so that the situation being used in the wavelength of i line, h line, g line the exposure light with peak value is
Example illustrates.
I line is wavelength the shortest in these 3 wavelength.In view of the fine sizes part having for transfer pattern, only
Want wavelength the shortest, then can expect higher resolution, thus carry out on the basis of considering the i line in above-mentioned 3 wavelength
The film design of photomask.It is to use and i line wavelength (365nm) is illustrated that the phase shift film closest to 180 degree of phase shifts is to manufacture phase
The method moving mask.In the case of Gai, for the g line farthest away from i line, phase-shift phase has the biggest deviation (for example, away from 180 degree
150 degree～160 degree), therefore it is contemplated to the phase shift effect of g line is reduced.In order to avoid this situation, it is also contemplated that following set
Meter: in these 3 wavelength, for being nearly seated at the h line of central authorities, makes phase-shift phase closest to 180 degree.But, above-mentioned for comprising
What kind of the mask design of idea actually brings affect to transferability, does not carry out research.
In the manufacturing process of display device, it is formed on transfer printing body the resist of (such as display base plate) in coating
The transfer pattern that film (photoresist film of such as eurymeric) upper transfer photomask has, after development, obtains Resist patterns.
Further, the thin film having this transfer printing body is etched processing.Now, it is known that the quality of the shape of this Resist patterns is notable
Impact etching precision.
Such as, it is desirable to when transferring less sectional hole patterns on the resist film being formed on this transfer printing body, along with aperture
Reduction and become to be difficult to differentiate.So, when using phase shifting mask to make it transfer, along with irradiate light quantity increase,
In the Resist patterns formed, the resist of the thickness loss producing the resist film around hole damages.As a reference example, figure
The analog result of this situation is represented shown in (a), (b) of 1.Herein, (a) of Fig. 1 illustrates and utilizes FPD exposure device to Fig. 1
The phase shifting mask shown in (c) be formed at the Resist patterns cross section of resist film 30 when being exposed.(b) of Fig. 1 illustrates profit
The Resist patterns of resist film 30 it is formed at when the phase shifting mask shown in (d) of Fig. 1 being exposed with FPD exposure device
Cross section.
Additionally, in the phase shifting mask shown in (c), (d) of Fig. 1, at the phase shift film that transmitance Ti is 5% 10 for i line
On define foursquare isolated sectional hole patterns 20.The aperture of the isolated sectional hole patterns in the photomask shown in (c) of Fig. 1 (is herein
The length on one side of isolated sectional hole patterns 20) it is 3.0 μm, the aperture of the isolated sectional hole patterns in the photomask shown in (d) of Fig. 1 is
2.5μm。
In order to play excellent function as etching mask, for the shape of Resist patterns, the inclination at edge is
Uprightly (angle, θ shown in (b) of Fig. 1 is as far as possible close to vertical) is favourable, now, it is possible to obtain stable etching precision,
The dimensional accuracy of excellence can be obtained eventually.But, as shown in (a) and (b) of Fig. 1, find that when pattern aperture diminishes, then θ diminishes,
The inclination (toppling over) of Resist patterns end is tended to become notable.
Additionally, in resist residual film part, remaining has the resist of adequate thickness to be favourable, compared with (a) of Fig. 1,
The thickness of (b) of Fig. 1 that aperture is little is little.Phase shift film has the light transmittance of regulation, therefore at adjacent edges due to the dry of light
Light intensity is made to reduce, but the position the most remote away from edge, produce so-called secondary lobe.Eventually produce infringement resist residual-film thickness degree
Shortcoming.Particularly through in light intensity distributions, near the position producing secondary lobe, resist produces recess, and residual-film amount is pole
Little value (the B point of (b) of Fig. 1).
Therefore, it is desirable to the least part of the residual-film thickness of resist, i.e. Resist patterns end (the A point of (b) of Fig. 1, below
Also referred to as marginal position) and the difference in height of above-mentioned resist recess location (the B point of (b) of Fig. 1, hereinafter also referred to secondary lobe position)
(H of (b) of Fig. 1) is bigger.
As can be observed from the foregoing, the quality of Resist patterns shape is residual according to cant angle theta and the resist of Resist patterns end
The thickness H of film least part is evaluated meaningful.If examining in terms of the optical imagery of the light formation through photomask
Consider, then can be ILS (Image Log-Slope) and contrast (Michelson to its index being evaluated
Contrast), it is believed that it is favourable for using the condition that can fully improve these numerical value.This is referred to passing through shown in Fig. 2
Light intensity, utilizes following parameter to show.Formed when Fig. 2 is to be exposed as pattern as (c), (d) to Fig. 1
The light intensity of optical imagery, in figure, position, A ' corresponding edge, the corresponding secondary lobe position of B '.
[several 1]
[several 2]
Herein,
I (Xedge) is the light intensity at the position Xedge of corresponding pattern marginal position in light intensity distributions.
I (Xsidelobe) is the light intensity in light intensity distributions at the position Xsidelobe of corresponding secondary lobe position.
Fig. 3 shows an analog result, in this simulation, uses the phase shifting mask of the isolated sectional hole patterns with aperture 3 μm, profit
With the conditions of exposure as Fig. 1, when being transferred to the positive light anti-etching agent being coated on transfer printing body, demonstrate ILS (left side
The longitudinal axis) and contrast (the right side longitudinal axis) change (upside transverse axis) and the phase-shift phase (downside linked with it along with the thickness of phase shift film
Transverse axis) and what kind of occurs change.
In this simulation, the condition of application is as follows: the NA (numerical aperture) of the optical system of exposure device is 0.083, and σ is (relevant
Coefficient) it is 0.7, phase shift film comprises MoSi.In the wavelength region of exposure light, the transmitance of this phase shift film has relative to wavelength
Positive correlation.
On the transverse axis of downside, by the phase shift film of use for i line (365nm), h line (405nm), g line (436nm) phase just
The thickness moving 180 degree is respectively labeled as L, M, N.That is, if using this phase shift film with the form of thickness L, then it is the phase shift of i line benchmark
Film；If using with the form of thickness M, then it it is the phase shift film of h line benchmark；If using with the form of thickness N, then it is g
The phase shift film of line benchmark.
As according to Fig. 3 institute it will be appreciated that as, maximum is shown, during for ILS, h line benchmark in i line, g line benchmark
Slowly decline.On the other hand, for contrast, monotone increasing in this wavelength region, therefore illustrate the highest in maximum wavelength side
Numerical value.When i.e. wavelength shortens, drastically decline.
If the edge tilt shape of the Resist patterns only consider ILS, i.e. being formed, then it is assumed that application is for h line phase shift
The film (hereinafter referred to as h line benchmark phase shift film) of 180 degree is best.But, if consider resisting around contrast, i.e. target pattern simultaneously
When affecting of erosion agent loss, is the most substantially that the situation of the thickness (for g line benchmark phase shift film) selecting g line phase shift 180 degree is more favourable.
This is because, relative to the phase shift film of h line benchmark, although g line benchmark phase shift film is the poorest in terms of ILS, but energy in contrast
Enough enjoy the advantage being better than it.It practice, in the mask of g line benchmark phase shift film employing Fig. 3 example, demonstrate that ILS has
The value and the contrast that have more than 1.50 are more than 0.6 the most excellent transferability.
Transmitance for phase shifting mask is studied, and therefore transverse axis illustrates that the figure of transmitance of phase shift film is Fig. 4.
It is possible to understand, for transmitance Tg of g line in the region of 3%～15%, ILS with the balance of contrast is
Suitable.Preferred transmitance Tg is 3%～10%.
In the present invention, transmitance can be applied to have positively related phase shift film for wavelength but it also may for following feelings
Condition: transmitance Tg (%) for g line and for transmitance Ti (%) of i line between, following formula set up.
3≤Tg-Ti≤10
It is further preferred that 4≤Tg-Ti≤9.
Wherein, even if the numerical value of Tg-Ti is less than 4, it is also possible to obtain the effect of the present invention.
Additionally, as the phase-shift characterisitc of the phase shift film that can apply to the present invention, suitable example is following situation: right
Phase-shift phase in g lineWith the phase-shift phase for i lineBetween, following formula is set up.
More specifically,
It should be noted that in the present invention, phase-shift phase is marked with degree (deg), such as phase-shift phaseIt it is 150 degree
Situation represent that the phase place making light offsets, at positive side or minus side, the situation that [150+360 × (n-1)] spends.Herein, n represents nature
Number.
In the phase shift film of the present invention,RatioCloser to 180 degree.180 degree can be not equal to equal to 180 degree
In the case of, in the range of the difference of regulation.Preferably,Difference with 180 degree is less than 30 degree and is advisable, more preferably
It is less than 20 degree, more preferably less than 10 degree.
As the phase-shift phase for each wavelength, the most following situation:
And
Additionally, exemplify following situation: set the phase-shift phase for h line asTime, then following formula is set up.
It may further be preferable that
Additionally, as according to above-mentioned institute it will be appreciated that as, the photomask of the present invention comprises i line, h line, g line as use
Wavelength region as exposure light photomask play remarkable result.
The material of the phase shift film of the present invention can be the film such as containing Si, Cr, Ta, Zr etc., can be from their oxidation
Thing, nitride, carbide etc. select suitable material.As the film containing Si, it is possible to use the compound (SiON etc.) of Si,
Or transition metal silicide (MoSi etc.) or its compound.As the compound of MoSi, can be with the oxide of example MoSi, nitridation
Thing, nitrogen oxides, nitrogen-oxygen carbide etc..
When to make phase shift film be the film containing Cr, it is possible to use (oxide, nitride, carbide, nitrogen aoxidize the compound of Cr
Thing, carbonitride, nitrogen-oxygen carbide).
Provided of course that do not damage the effect of the present invention, the photomask of the present invention can have the film beyond phase shift film, film figure
Case.Such as photomask, etching barrier film, antireflection film, electric charge adjustment film etc. can be enumerated.In the case of Gai, with the phase of the present invention
The above-mentioned film that shifting film connects preferably has the material of mutual etching selectivity with phase shift film.As candidate material, can be from right
Select in the material that phase shift film is enumerated.
Purposes for the photomask of the present invention is not particularly limited.But, as transfer pattern, there is fine chi
Very little pattern is favourable, is particularly favourable in isolated patterns.
The situation comprising the isolated sectional hole patterns that aperture is below 4 μm in such as transfer pattern can be enumerated.Preferably smaller than
3.5 μm, more preferably less than 3 μm, be further preferably no larger than the isolated sectional hole patterns of 2.5 μm in the case of, invention effect is notable.Such as root
Will also appreciate that according to above-mentioned Fig. 1, there is also pattern that aperture is 2 μm or the less trend for display device from now on, this
Bright can also be applied to such pattern.
Herein, if pattern is generally circular in shape, then the aperture of pattern refers to diameter；If square, then the aperture of pattern
Refer to length on one side；If other regular polygons, then the aperture of pattern refers to external diameter of a circle；If rectangle, then scheme
The aperture of case refers to the length of minor face.
Herein, isolated (iso) pattern refers to following pattern.That is, plural pattern is regularly arranged, and because of through light
Dry mutually play optical effect thus form transferred image, during using this pattern as intensive (dense) pattern, then by its with
Outer pattern is referred to as isolated patterns.
During it is further preferred that the aperture of 1 isolated patterns is D μm, at the distance range away from the outer genesis at least 2D of this pattern
There are not other patterns.Following situation can be exemplified: the shape that the transmittance section of such as D μm is surrounded by the portion of being phase-shifted isolated
During pattern, in the distance range away from the outer genesis at least 2D of this transmittance section, only exist phase shift portion.Preferably, in the scope of 3D
The most there are not other patterns.
It should be noted that sectional hole patterns can be formed at " otch " (opening) pattern of above-mentioned phase shift film.
In wanting the display device obtained, sectional hole patterns as above can be the pattern for forming contact hole, but
It is not limited to this purposes.
The transfer pattern that the photomask of the present invention is possessed is transferred on the resist film on transfer printing body, can be with shape
Becoming the Resist patterns of excellent in shape, this resist film can be photoresist film.There is no the restriction of eurymeric, minus, but excellent
Elect the situation of eurymeric as.Generally, the applicable exposure with high voltage mercury lamp as light source of photoresist that display device is used in manufacturing,
In i line, h line, the wavelength region of g line, there is sensitivity, for being in a ratio of high wavelength side or low wavelength side with above-mentioned wavelength region
Light, sensitivity reduce.
Hereinbefore, the superiority for the phase shift film of g line benchmark is illustrated.It should be noted that mask is entered
During row design, it is advantageous to for the phase-shift phase of the wavelength of the long wavelength side in plural wavelength contained in exposure light
Be compared to the phase-shift phase of wavelength beyond it closer to 180 degree, should in the case of can obtain the effect of the present invention.The present invention comprises
The method for designing of such photomask.
The photomask of the present invention can have the photomask pattern obtained by making photomask carry out patterning further.
In the case of Gai, this photomask pattern can be a part for transfer pattern, it is also possible to outside the region of transfer pattern.Front
In the case of person, as transfer pattern, in addition to transmittance section, phase shift portion, it is also possible to comprise formation phase shift film and photomask
Light shielding part.In the latter case, can for the indicia patterns of goods identification, photomask manufacture time or use time institute
Calibrating pattern.
Purposes as described previously for the photomask of the present invention does not limit, and (comprises as LCD in display device
Display device known to (Liquid Crystal Display), OLED (Organic Light-Emitting Diode)) in,
The effect of excellence can be obtained.
The present invention comprises the photomask blank that can be used for obtaining above-mentioned photomask.This photomask blank is on the transparent substrate
It is formed with the photomask blank of phase shift film, is making for forming transfer pattern by making above-mentioned phase shift film pattern
In the photomask blank of photomask,
If phase-shift phase (spending) that above-mentioned phase shift film has, for g line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for h line is
Phase-shift phase (spending) that above-mentioned phase shift film has, for i line isTime,
Then meet
Further, theseIn, closest to the values of 180 degree it isIt should be noted that " closest to 180 degree
Value " comprise the situation equal to 180 degree.
Transmitance that if above-mentioned phase shift film has, for g line is Tg (%), transmitance for i line is Ti (%),
Then it is preferably Ti < Tg.
Feature about phase shift film is described above.
Further, the present invention comprises the manufacture method of photomask, in this manufacture method, prepares above-mentioned photomask blank, makes this
The phase shift film that photomask blank is possessed carries out patterning and forming transfer pattern.
Additionally, the present invention comprises the method for designing of photomask.That is, the method for designing of a kind of photomask,
It is for possessing the design side of the photomask of the transfer pattern comprising patterned phase shift film on the transparent substrate
Method, this method for designing is characterised by,
Above-mentioned photomask has the exposure light of intensity peak in plural wavelength for utilizing, and above-mentioned transfer is used
Pattern is transferred on transfer printing body,
Above-mentioned transfer pattern is included in the phase shift portion of phase shift film that is formed with on above-mentioned transparency carrier, above-mentioned transparency carrier dew
The transmittance section gone out,
If above-mentioned phase shift film is Tg (%) for the transmitance of g line,
Then 3 < Tg < 15,
Further, if the wavelength being in the light of long wavelength side in wavelength more than above-mentioned two is α,
If the phase-shift phase of the above-mentioned phase shift film under this wavelength α isTime,
Determine physical property and the thickness of above-mentioned phase shift film so that above-mentionedDifference with 180 degree is less than ripple more than above-mentioned two
The phase-shift phase in the wavelength beyond α in length and the difference of 180 degree.
Herein, in the sensitivity regions that the resist that plural wavelength is used when being included in photomask exposure has.
Additionally, phase shift film feature etc. are the most same as described above herein.
Such as, for above-mentioned phase shift film, can wavelength region medium wavelength more than above-mentioned two and light transmittance
Value has positive correlation.
The photomask utilizing the method for designing of the present invention to design can apply known operation to manufacture.That is, utilize
The film build methods such as sputtering, by phase shift film film forming to transparency carrier, form resist film from the teeth outwards, are thereby preparing for against corrosion
The photomask blank of agent.Resist can be the photoresist of plus or minus type, can be such as eurymeric.Use drawing apparatus pair
This photomask blank carries out the description of desired pattern.As drawing apparatus used herein, it is possible to use laser describes dress
Put.Then, utilize known developing agent that resist is developed, with the Resist patterns that formed as mask, to phase shift
Film is etched.Etching can be dry etching, it is also possible to for wet etching, but as display device manufacture photomask, more
Preferably wet etching.This is because, with large scale and there is the etching as object of the substrate of sizes be easier.Etching
After, remove Resist patterns, thus complete to be formed with the photomask of the transfer pattern of phase shift film.Can be according to the use of photomask
On the way, known method, on the basis of above-mentioned operation, additional photomask or the film forming of other films, description, pattern chemical industry are utilized
Sequence, thus form the transfer pattern wanting to obtain.
Further, the present invention comprises the manufacture method of the display device using above-mentioned photomask.
That is, the manufacture method of a kind of display device, it is to include that the transfer using exposure device to be had by photomask is schemed
The manufacture method of the display device of the operation that case is transferred on transfer printing body, the above-mentioned transfer of the manufacture method of this display device
Operation comprises the exposure light being radiated at above-mentioned transfer pattern in plural wavelength containing intensity peak,
It is characterized in that,
Above-mentioned photomask possesses the transfer pattern making phase shift film patterned on the transparent substrate,
Above-mentioned transfer pattern is included in the phase shift portion of phase shift film that is formed with on above-mentioned transparency carrier, above-mentioned transparency carrier dew
The transmittance section gone out,
Transmitance that if above-mentioned phase shift film has, for g line is Tg (%),
Then 3 < Tg < 15,
Further, if the wavelength of the light of long wavelength side in wavelength more than above-mentioned two is α,
If the phase-shift phase of the above-mentioned phase shift film in this wavelength α isTime,
Use above-mentionedDifference with 180 degree is less than the phase-shift phase in the wavelength beyond the α in wavelength more than above-mentioned two
Physical property as difference with 180 degree and the phase shift film of thickness, form above-mentioned transfer pattern.
In the sensitivity regions that the most plural wavelength resist used when being also contained in photomask exposure has.
Additionally, as exposure device used herein, suitably use possess numerical aperture (NA) be 0.08～0.15, coherence factor (σ)
It it is the equimultiple exposure device of the optical system of 0.5～about 1.0.
For the transferability of the photomask that the light of wavelength region wide as use i line～g line is exposed, with long wave
On the basis of the wavelength of long side, it is favourable for setting 180 degree of phase shifts, and this is above the action effect of prediction.
It should be noted that in the photomask only using i line and h line to be exposed, preferably phase-shift phaseWithInCloser to 180 degree.
Symbol description
10 phase shift films
20 isolate sectional hole patterns
30 resist films
Claims (15)
1. a photomask, it is that the light possessing the transfer pattern comprising patterned phase shift film on the transparent substrate is covered
Mould, it is characterised in that
Described transfer pattern is included in and is formed with the phase shift portion of phase shift film on described transparency carrier and described transparency carrier exposes
Transmittance section,
If phase-shift phase (spending) that described phase shift film has, for g line is
Phase-shift phase (spending) that described phase shift film has, for h line is
Phase-shift phase (spending) that described phase shift film has, for i line isTime,
Then meet
Further, theseIn, closest to the values of 180 degree it is
2. photomask as claimed in claim 1, it is characterised in that set that described phase shift film has, for g line transmitance as
During Tg (%), then 3 < Tg < 15.
3. photomask as claimed in claim 1 or 2, it is characterised in that set that described phase shift film has, g line is passed through
When rate is Tg (%), transmitance for i line is Ti (%), then Ti < Tg.
4. photomask as claimed in claim 1 or 2, it is characterised in that it is below 4 μm that described transfer pattern comprises aperture
Isolated sectional hole patterns.
5. photomask as claimed in claim 1 or 2, wherein, described photomask is that application comprises i line～the wavelength region of g line
Light as exposure light photomask.
6. photomask as claimed in claim 1 or 2, wherein, described transparency carrier is further equipped with patterned shading
Film.
7. photomask as claimed in claim 1 or 2, wherein, described photomask possesses the transfer figure of display device manufacture
Case.
8. a photomask blank, it is the photomask blank being formed with phase shift film on the transparent substrate, and this photomask blank is used
Photomask is made in forming transfer pattern by being patterned by described phase shift film, it is characterised in that
If phase-shift phase (spending) that described phase shift film has, for g line is
Phase-shift phase (spending) that described phase shift film has, for h line is
Phase-shift phase (spending) that described phase shift film has, for i line isTime,
Then meet
Further, theseIn, closest to the values of 180 degree it is
9. photomask blank as claimed in claim 8, wherein, if transmitance that described phase shift film has, for g line is Tg
(%) time, then 3 < Tg < 15.
10. photomask blank as claimed in claim 8 or 9, it is characterised in that set that described phase shift film has, for g line
When transmitance is Tg (%), transmitance for i line is Ti (%), then Ti < Tg.
11. photomask blanks as claimed in claim 8 or 9, it is characterised in that this photomask blank is used for manufacturing application and comprises
The light of the wavelength region of i line～g line is as the photomask of exposure light.
12. photomask blanks as claimed in claim 8 or 9, wherein, are formed further with photomask on described phase shift film.
The manufacture method of 13. 1 kinds of photomasks, it has:
The operation of preparation photomask blank according to any one of claim 8～12；With
Patterned by the described phase shift film making described photomask blank have and form the operation of transfer pattern.
The method for designing of 14. 1 kinds of photomasks, it is that the transfer possessing on the transparent substrate and comprising patterned phase shift film is used
The method for designing of the photomask of pattern, this method for designing is characterised by,
Described photomask has the exposure light of intensity peak by described transfer pattern for utilizing in plural wavelength
It is transferred on transfer printing body,
Described transfer pattern is included in and is formed with the phase shift portion of phase shift film on described transparency carrier and described transparency carrier exposes
Transmittance section,
Transmitance that if described phase shift film has, for g line is Tg (%),
Then 3 < Tg < 15,
Further, if the wavelength being in the light of long wavelength side in wavelength more than said two be α, in said two wavelengths above
Any wavelength being in the wavelength side shorter than α is β,
If the phase-shift phase of the described phase shift film in this wavelength α isThe phase-shift phase of the described phase shift film in described wavelength β is
Time, then meet
Further, physical property and the thickness of described phase shift film are selected so that describedWith the difference of 180 degree less than in described arbitrary βWith the difference of 180 degree.
The manufacture method of 15. 1 kinds of display devices, it is to include that the transfer pattern using exposure device to be had by photomask turns
The manufacture method of the display device of the operation printed to transfer printing body, the operation of the described transfer of the manufacture method of this display device
Comprise and described transfer pattern be radiated in two or more wavelength the exposure light containing intensity peak,
It is characterized in that,
Described photomask possesses the transfer pattern making phase shift film pattern on the transparent substrate,
Described transfer pattern comprises and is formed with the phase shift portion of phase shift film on described transparency carrier and described transparency carrier exposes
Transmittance section,
Transmitance that if described phase shift film has, for g line is Tg (%),
Then 3 < Tg < 15,
Further, if wavelength more than said two is in the wavelength that wavelength is more than α, said two of the light of long wavelength side
In to be in any wavelength of the wavelength side shorter than α be β,
If the phase-shift phase of the described phase shift film in this wavelength α isThe phase-shift phase of the described phase shift film in described wavelength β is
Time, then meet
Further, use has describedWith the difference of 180 degree less than describedSuch physical property and the phase of thickness with the difference of 180 degree
Move film, form described transfer pattern.
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|---|---|---|---|
| CN201910485133.5A CN110262182B (en) | 2015-06-30 | 2016-06-15 | Photomask, photomask designing method, photomask blank and display device manufacturing method |
| CN202110223505.4A CN112987484A (en) | 2015-06-30 | 2016-06-15 | Photomask, photomask designing method, photomask blank, and method for manufacturing display device |
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| JP2015-130976 | 2015-06-30 | ||
| JP2015130976A JP6767735B2 (en) | 2015-06-30 | 2015-06-30 | Photomasks, photomask design methods, photomask blanks, and display device manufacturing methods |
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| CN202110223505.4A Division CN112987484A (en) | 2015-06-30 | 2016-06-15 | Photomask, photomask designing method, photomask blank, and method for manufacturing display device |
| CN201910485133.5A Division CN110262182B (en) | 2015-06-30 | 2016-06-15 | Photomask, photomask designing method, photomask blank and display device manufacturing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101898327B1 (en) | 2018-09-12 |
| CN106324977B (en) | 2023-05-12 |
| TWI613508B (en) | 2018-02-01 |
| TW201704846A (en) | 2017-02-01 |
| JP2017015863A (en) | 2017-01-19 |
| CN110262182B (en) | 2023-05-26 |
| CN112987484A (en) | 2021-06-18 |
| JP6767735B2 (en) | 2020-10-14 |
| CN110262182A (en) | 2019-09-20 |
| KR20170003412A (en) | 2017-01-09 |
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