CN103576441A - Phase shift blankmask and photomask using the flat panel display - Google Patents
Phase shift blankmask and photomask using the flat panel display Download PDFInfo
- Publication number
- CN103576441A CN103576441A CN201310319871.5A CN201310319871A CN103576441A CN 103576441 A CN103576441 A CN 103576441A CN 201310319871 A CN201310319871 A CN 201310319871A CN 103576441 A CN103576441 A CN 103576441A
- Authority
- CN
- China
- Prior art keywords
- phase shift
- layer pattern
- film
- shift layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Abstract
In order to manufacture a flat panel display (FPD), a multilayer-type layer or continuous layers including at least two films is/are used to form a phase shift layer, the film containing metal and light elements, such as nitrogen (N), oxygen (O) and carbon (C). The multilayer-type layer or continuous layers is/are formed by the at least two films laminated on a transparent substrate and having different compositions and different etch rates. Therefore, the thickness of the phase shift layer can be reduced, and a slope of the cross section of an edge portion is generated steeply during the patterning of the phase ship layer, such that the boundary between patterns of the phase ship layer is clear. As a result, the evenness of the phase ship layer is ensured, and layer-area FPD products with fine patterns can be manufactured.
Description
Technical field
The present invention relates to a kind of phase shifting mask blank and photomask for flat-panel monitor (hereinafter referred to as FPD), and or rather, the present invention relates to a kind of mask blank for FPD and photomask, wherein the slope in the cross section of phase shift layer pattern can form precipitously.
Background technology
In the lithography process of integrated for the manufacture of FPD device or semiconductor mega (hereinafter referred to as LSI) device, conventionally use the photomask manufacturing from mask blank to carry out pattern transferring.
Mask blank is to obtain by following steps: on the first type surface of the light-transmissive substrates being formed by synthetic quartz glass, form the film that comprises metal material, form resist layer subsequently on described film.The shape of photomask is to form by the film in pattern mask blank., can film be divided into light shield layer, anti-reflecting layer (ARL), phase shift layer, semitransmissive layer according to optical characteristics herein, and reflection horizon, and can use simultaneously in these films at least both.
Size for the manufacture of a limit of the photomask of LSI device is generally 6 inches (or 152mm), and being of a size of 300mm or longer for the manufacture of a limit of the photomask of FPD device, this size than the limit of photomask for the manufacture of LSI device is relatively larger.
In recent years, the integrated LSI device of image height degree is the same, and in FPD device, along with the increase of integration density causes the contraction of design rule, the pattern that is used to form the photomask of fine pattern also needs accurately scaled.In order to form meticulousr pattern in FPD device, need high pattern resolution.For this reason, adopted and reduced to be used to form the wavelength of light source of pattern and the method in the aperture of increase lens.Yet, when the wavelength of light source reduces and when the aperture of lens increases, pattern resolution may increase, but because low depth of focus (DOF) has caused limiting to some extent obtaining aspect actual pattern resolution.The phase-shift photomask of use phase shift layer has been developed and has overcome above-mentioned restriction, compares with binary photomask, and phase-shift photomask more can increase pattern resolution.
Fig. 1 is the figure that shows the optical characteristics of phase-shift photomask, and Fig. 2 is the figure that shows the comparison between the resolution of binary photomask and the resolution of phase-shift photomask.With reference to figure 1, phase-shift photomask is to be that 3% to 10% phase shift layer 2 is configured by form transmittance in transparent substrates 1.The exposure that transmission is passed phase shift layer 2 through exposure and the not transmission of phase shift layer 2 has formed the phase differential of 180 °, and resolution may be increased due to the destructive interference of the boundary between phase shift layer 2.And with reference to figure 2, phase-shift photomask can be with the resolution higher than the binary photomask meticulous pattern that exposes.
As mentioned above, recently, for the manufacture of the pattern of the photomask of FPD device, also need scaled.Because FPD device need to have larger screen and higher resolution, so Pixel Dimensions should be reduced.As corollary, need to make pattern microminiaturized.Yet because FPD device is to manufacture with the exposure sources that equates enlargement ratio, the pattern line-width that therefore pattern line-width of FPD device will be reduced to LSI device is so narrow, is almost impossible.Photomask for the manufacture of FPD device is that each limit is 300mm or longer large-size photomask, and has various sizes.Therefore, be not easy to develop the reduction exposure sources conforming to the size of photomask for the manufacture of FPD device.
Recently, when use equating the exposure sources of enlargement ratio in order to improve the resolution for the manufacture of the photomask of FPD device, with MoSi compound or Cr compound, form the phase shift layer of single-layer type, this compound is in order to manufacture the photomask of LSI device, and with the wet etching process that is suitable for large-area layers, carrys out phase shift layer described in patterning subsequently.Yet to containing MoSi(, it contains the material that is suitable for dry method etch technology owing to being not easy to) phase shift layer carry out wet etching, therefore in patterning process, there will be problem.And, in wet etch process, in the etched surface of the phase shift layer that contains Cr, formed gentle slope.Therefore that is to say, because the conventional phase shift layer that contains Cr forms single-layer type, using etchant to carry out, in the process of patterning, isotropic etching to occur.Result is to have formed gentle slope in the etched surface of pattern edge part.
The slope forming in pattern edge part partly with between remainder has caused phase variation at pattern edge, and affects the homogeneity of phase shift layer.In addition, the phase shift layer slope in pattern edge part causes the border between phase shift layer to become unintelligible, thereby has hindered the formation of fine pattern.
Summary of the invention
[technical matters]
What the present invention is directed to is a kind of phase shifting mask blank and photomask for flat-panel monitor (FPD), wherein the thickness of phase shift layer can be reduced, and the slope in the cross section of marginal portion can form precipitously, thereby make the border between phase shift layer pattern become clear.
The present invention is also for a kind of phase shifting mask blank and photomask for FPD, and it can guarantee the homogeneity of phase shift layer and can manufacture to have the more large area FPD product of fine pattern.
[technical solution]
One aspect of the present invention provides a kind of phase-shift photomask for flat-panel monitor (FPD), and it comprises the phase shift layer pattern being arranged in transparent substrates.This phase shift layer pattern has at least two structures that film is mutually stacking.
Tail dimension in the marginal portion of phase shift layer pattern between coboundary and lower limb (tail size) can change from 0nm to 100nm.
Each film that forms phase shift layer pattern can comprise following at least one metal material: chromium (Cr), aluminium (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulphur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb) and silicon (Si), or except above-mentioned material, also further comprise following at least one material: nitrogen (N), oxygen (O) and carbon (C).
Each film that forms phase shift layer pattern can be by coming etched material form and have different forming with same etch agent, and phase shift layer pattern can be by forming each stacks of thin films with different compositions at least one times.
Each film that forms phase shift layer pattern can be formed by following a kind of film: Cr film, CrO film, CrN film, CrC film, CrON film, CrCN film, CrCO film and CrCON film.
For same etch agent, the etch-rate that forms each film of phase shift layer pattern upwards reduces gradually from transparent substrates.
Each film that forms phase shift layer pattern can make for same etch agent through forming, and is arranged on the etch-rate of central film lower than the film being arranged on the above and below of central film.
The thickness of phase shift layer pattern can be
extremely
and the thickness that forms each film of phase shift layer pattern can be
extremely
Phase shift layer pattern and wavelength are that the phase differential between the exposure of 200nm to 600nm can be 160 ° to 200 °, and transmittance can be 1% to 30%, and and the wavelength exposure that is 200nm to 600 between transmittance deviation can be 0% to 10%.Herein, transmittance deviation can obtain by max transmissive is deducted to minimum transmittance (number percent) than (number percent).
Phase differential deviation between each in phase shift layer pattern and i line, h line and g line is 0 ° to 50 °.Herein, phase differential deviation can by by maximal phase parallactic angle (°) deduct maximal phase parallactic angle (°) obtain.
Phase shift layer pattern can comprise the layer of successive layers or multi-layered type, and forms each film formation individual layer or successive layers of phase shift layer pattern.
Described photomask may further include the functional layer pattern being arranged on above or below phase shift layer pattern.
Described functional layer pattern can comprise following at least one pattern: the light shield layer pattern that comprises light shield layer and anti-reflecting layer (ARL), semitransmissive layer pattern, etch stop layer pattern and hard mask layer pattern.
When functional layer pattern is light shield layer pattern, light shield layer pattern can be arranged in the blind area at edge of transparent substrates, or is arranged in primary area and blind area.
Light shield layer pattern can comprise following at least one metal material: chromium (Cr), aluminium (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulphur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb) and silicon (Si), or except above-mentioned material, also further comprise following at least one material: nitrogen (N), oxygen (O) and carbon (C).
Light shield layer pattern can have the etching character identical with phase shift layer pattern, or has the etching selectivity for phase shift layer pattern.
The thickness of light shield layer pattern can be
extremely
Another aspect of the present invention provides a kind of phase shifting mask blank for FPD, and it is for the manufacture of the phase-shift photomask for FPD according to the present invention, and this phase shifting mask blank comprises phase shift layer, and this phase shift layer comprises at least two films that are stacked in transparent substrates.
[advantageous effects]
In the present invention, phase shift layer is to form with layer or the successive layers of multi-layered type, and layer or the successive layers of this multi-layered type have the difference of composition and at least two different films of etch-rate.
Therefore, the thickness of phase shift layer can reduce.In addition, the slope in the cross section of phase shift layer pattern edge part can form in the patterning process of phase shift layer precipitously, and making the border between phase shift layer pattern can be clearly.Therefore, can guarantee the homogeneity of the phase shift layer pattern of photomask, and can guarantee to produce and there is the more large area FPD product of fine pattern.
Accompanying drawing explanation
Fig. 1 is the figure that shows the optical characteristics of phase-shift photomask.
Fig. 2 is the figure that shows the comparison between the resolution of binary photomask and the resolution of phase-shift photomask.
Fig. 3 is according to the sectional view of the phase shifting mask blank of one exemplary embodiment of the present invention.
Fig. 4 is according to the sectional view of the phase shift layer of the phase shifting mask blank of one exemplary embodiment of the present invention.
Fig. 5 is according to the sectional view of the phase-shift photomask of one exemplary embodiment of the present invention.
Fig. 6 A and Fig. 6 B are according to the sectional view of the phase shifting mask blank of one exemplary embodiment of the present invention.
Fig. 7 A to Fig. 7 D is according to the sectional view of the phase-shift photomask of one exemplary embodiment of the present invention.
Fig. 8 A to Fig. 8 C is according to the image of the phase shift layer pattern edge part of the phase shifting mask of one exemplary embodiment of the present invention.
Fig. 9 is according to the image of the phase shift layer pattern edge part of the phase-shift photomask of a comparison example of the present invention.
Embodiment
Hereinafter, will describe exemplary embodiment of the present invention in detail.Although will the present invention specifically be shown and be described with reference to exemplary embodiment of the present invention, but those skilled in the art will appreciate that, in the situation that do not depart from the spirit and scope of the present invention that appended claims limits, can make various changes to form and details.Exemplary embodiment should be understood to be exemplary and descriptive, and is not used in the object of restriction.Therefore, scope of the present invention is not to be limited by the specific embodiment of the present invention, but is limited by appended claims, and all differences within the scope of this should be interpreted as comprising in the present invention.
Fig. 3 is according to the sectional view of the phase shifting mask blank of one exemplary embodiment of the present invention.
With reference to figure 3, according to the phase shifting mask blank 100 of one exemplary embodiment of the present invention, it is the phase shifting mask blank 100 for flat-panel monitor (FPD), described flat-panel monitor comprises liquid crystal display (LCD), plasma display panel (PDP), and Organic Light Emitting Diode (OLED).Phase shifting mask blank 100 comprises transparent substrates 102 and is stacked in order phase shift layer 104 and the resist layer 108 in transparent substrates 102.
With reference to figure 4, phase shift layer 104 has at least two film 104a ..., the structure mutually stacking with 104n.Preferably, stacking two to six films.At least two films that form phase shift layer 104 have formed the layer of successive layers or multi-layered type.Herein, successive layers refers in sputter procedure, by changing the technological parameters such as active gases, power and pressure, and the layer forming in the situation that plasma source is opened.Successive layers has different compositions on depth direction.The layer of multi-layered type refers to the layer obtaining by stacking several individual layers, and each individual layer has constant composition on depth direction.Form the film 104a of phase shift layer 104 ..., and each in 104n has individual layer or successive layers.
Form the film 104a of phase shift layer 104, can be formed by the compound that for example comprises following at least one metal material with 104n: aluminium (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulphur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb) and silicon (Si).And, except above-mentioned material, form the film 104a of phase shift layer 104 ..., and 104n can further include following at least one material: nitrogen (N), oxygen (O) and carbon (C).Form the film 104a of phase shift layer 104 ..., and 104n preferably forms by chromium (Cr) compound, described chromium (Cr) compound is following a kind of film: Cr film, CrO film, CrN film, CrC film, CrON film, CrCN film, CrCO film and CrCON film.Form the film 104a of phase shift layer 104 ..., and 104n can form by means of sputtering technology as active gases with a kind of gas, described gas contains nitrogen (N), oxygen (O) and carbon (C), for example nitrogen (N
2), carbon dioxide (CO
2), methane (CH
4), nitrogen monoxide (NO), oxygen (O
2), or nitrous oxide (N
2o).
Form each film 104a of phase shift layer 104 ..., with 104n can be by having that difference forms and can using etched material together with same etch agent to form.Due to each film 104a ..., and 104n has different compositions, and therefore, each film 104a ..., and 104n has different etch-rates.Phase shift layer 104 is by having different each film 104a that form ..., and 104n is at least one times stacking and form.
Owing to forming the film 104a of phase shift layer 104, according to its thickness, etching character, etching material and composition, there is different etch-rates with 104n, therefore will be to film 104a in the situation that considering above-mentioned parameter, arrange with 104n, the slope in the cross section of phase shift layer pattern edge part can be formed in patterning process precipitously.
Form the film 104a of phase shift layer 104 ..., and 104n is preferably configured the lower film 104a that makes from arranging towards transparent substrates 102 to the film 104n of the superiors, etch-rate diminishes gradually.Yet, to consider and be adhered to compared with upper strata and etching character, the etch-rate of the lower film 104a arranging towards transparent substrates 102 is not film 104a ..., and minimum in 104n.Form the film 104a of phase shift layer 104 ..., and each the etch-rate in 104n can be by changing film 104a ..., and the content of the content of the metal material containing in 104n and nitrogen (N), oxygen (O) and carbon (C) is controlled.For example, as film 104a ..., and the content of the nitrogen containing in 104n and oxygen is when increase, film 104a ..., and the etch-rate of 104n can increase.When the content of carbon increases, film 104a ..., and the etch-rate of 104n can reduce.In addition, the film 104a of phase shift layer 104 ..., and 104n can be configured the etch-rate that makes to be arranged on central film lower than the etch-rate of film being arranged on the above and below of central film.
The thickness of phase shift layer 104 is
extremely
consider and be adhered to the set film in respective layer above and below and etching character, form the film 104a of phase shift layer 104 ..., and in 104n, the thickness of each can be
extremely
because phase shift layer 104 according to the present invention is by stacking a plurality of film 104a ..., and 104 and form, therefore can control the refractive index of phase shift layer 104, phase shift layer 104 can be formed than the less thickness of phase shift layer that uses individual layer to form.
Therefore, according to the thickness of phase shift layer 104 of the present invention, can reduce.And the slope in the cross section of the pattern edge of phase shift layer 104 part can form precipitously, make border between the pattern of phase shift layer 104 at patterning phase shift layer 104 with can be for clearly in forming the process of photomask.Therefore, can form meticulousr pattern.In this case, with reference to figure 5, it shows the phase shift layer pattern 104p according to photomask of the present invention, and the coboundary in the marginal portion of phase shift layer pattern 104p and the horizontal range between lower limb (or tail dimension d) are 100nm or less, and preferably, be 60nm or less.
Phase shifting mask blank 200 according to the present invention may further include the functional layer 106 being arranged on above or below phase shift layer 104.In this case, functional layer 106 comprises at least one layer, comprises light shield layer, semitransmissive layer, etching stopping layer and hard mask layer, and these layers need for pattern transferring.For example, when functional layer 106 comprises light shield layer, light shield layer 106 can comprise and has the individual layer of shade function and anti-reflection function or comprise light shield layer and the anti-reflecting layer with identical configuration and composition or different configurations.When functional layer 106 further comprises etching stopping layer, etching stopping layer can be between etching selectivity, phase shift layer and the light shield layer considered between transparent substrates and phase shift layer etching selectivity, and form in the situation of the etching selectivity between light shield layer and transparent substrates.
Fig. 6 A and Fig. 6 B are according to the sectional view of the phase shifting mask blank of exemplary embodiment of the present invention.
With reference to figure 6A and Fig. 6 B, according to the phase shifting mask blank 200 of exemplary embodiment of the present invention, can be top type or bottom type.
Hereinafter, functional layer 106 will be called as light shield layer 106.Light shield layer 106 can be formed by following at least one metal material: chromium (Cr), aluminium (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulphur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb) and silicon (Si).Or except above-mentioned material, light shield layer 106 can further include following at least one material: nitrogen (N), oxygen (O) and carbon (C).
The thickness of light shield layer 106 is preferably
extremely
more preferably, the thickness of light shield layer 106 is 800
or less.More specifically, the thickness of light shield layer 106 is
or less, this meets required optical density (OD) requirement of the overlapping part of light shield layer 106 and phase shift layer 104, and this is unchallenged in patterning process.
In addition, phase-shift photomask can form with aforementioned mask blank according to the present invention.
Fig. 7 A to Fig. 7 D is according to the sectional view of the phase-shift photomask of exemplary embodiment of the present invention.
With reference to figure 7A, according to the phase-shift photomask 300 of exemplary embodiment of the present invention, there is a kind of structure, wherein only have phase shift layer pattern 104p to be formed on primary area and blind area, described primary area is corresponding to the region that is provided with the master pattern of transparent substrates 102, and described blind area is corresponding to the region that is provided with the auxiliary patterns that comprises alignment mark.The manufacture method of photomask 300 can be: in transparent substrates 102, form according to priority phase shift layer and resist layer; Resist layer described in patterning, to form corrosion-resisting pattern; And corrosion-resisting pattern is carried out to etching as etching mask to phase shift layer, to form phase shift layer pattern 104p.
With reference to figure 7B and Fig. 7 C, according to the phase-shift photomask 300 of exemplary embodiment of the present invention, there is a kind of structure, wherein light shield layer pattern 106P is formed in the blind area of transparent substrates 102, and phase shift layer pattern 104p is arranged on the boundary member between light shield layer pattern 106P and primary area.In this case, in the forming process of light shield layer pattern 106P, the light shield layer pattern 106P of blind area can be through forming to have auxiliary patterns, alignment mark for example, and phase shift layer pattern 104p is arranged on the boundary member between light shield layer pattern 106P, the resolution of phase-shift photomask 300 can be improved.
With reference to figure 7B, now use description to manufacture the method for photomask 300.Form light shield layer and resist layer in transparent substrates 102 after, resist layer is carried out to patterning to form resist layer pattern, and resist layer pattern is carried out to etching as etching mask to light shield layer, to form light shield layer pattern 106P.After this, in the transparent substrates 102 that comprises light shield layer pattern 106P, form phase shift layer, on phase shift layer, form resist layer pattern, and phase shift layer is etched with and forms phase shift layer pattern 104p.
In addition,, with reference to figure 7C, now the method for manufacturing photomask 300 will be described.Form according to priority light shield layer, phase shift layer and resist layer in transparent substrates 102 after, resist layer is carried out to patterning to form corrosion-resisting pattern, and corrosion-resisting pattern is carried out to etching as etching mask to light shield layer and phase shift layer, to form light shield layer pattern 106P in blind area.After this, form resist layer pattern so that phase shift layer exposes, and the exposed portion of phase shift layer is etched with and forms phase shift layer pattern 104p.
With reference to figure 7D, according to the phase-shift photomask 300 of exemplary embodiment of the present invention, there is wheel rim type structure, wherein light shield layer pattern 106P is formed in the primary area and blind area of transparent substrates 102, and is provided with phase shift layer pattern 104p with around light shield layer pattern 106P and be arranged on the boundary member between the part light shield layer pattern 106P in primary area.
embodiment
the formation of phase shift layer
In order to assess the phase shifting mask blank according to exemplary embodiment of the present invention, in transparent substrates, form multi-layered type phase shift layer.
Particularly, chromium (Cr) target is formed to phase shift layer as sputtering target material by means of sputtering technology.In this case, sputtering technology is to carry out with following at least one gas: argon gas (Ar), nitrogen (N
2), carbon dioxide (CO
2), methane (CH
4), and nitrogen monoxide (NO), and phase shift layer is formed to CrCON layer, thickness is about
[table 1]
[formation of phase shift layer]
Table 1 shows according to the configuration of the phase shift layer of exemplary embodiment of the present invention and its comparison example.
Particularly, in embodiments of the invention 1 to 3, argon gas (Ar) is used as inert gas, and optionally uses nitrogen (N
2), methane (CH
4) and nitrogen monoxide (NO) at least two kinds of gases form the phase shift layer with three to six films.In this case, the film that forms phase shift layer is through forming and arranging to have identical composition or different compositions.Embodiments of the invention 1 to 3 and comparison example 1 all meet the desired condition of transmittance and aspect, phasing degree.
In embodiment 1 and 3, the film that forms phase shift layer is through forming with for the etchant with respect to identical, and more, towards transparent substrates below, the etch-rate having is larger.In embodiment 2, the etch-rate that is arranged on central film is lower than the etch-rate of film being arranged on the above and below of central film.
In comparison example 1, with CrCON individual layer, form phase shift layer.
according to the assessment of the phase shift layer of embodiment 1,2 and 3
On phase shift layer, form resist layer, and carry out exposure technology and developing process, to form resist layer pattern.
In addition, by resist layer pattern as etching mask and with typical chromium etchant to being exposed after phase shift layer carries out etching below, resist layer pattern is removed, and phase shift layer is assessed.
Fig. 8 A to Fig. 8 C is according to the image of the phase shift layer pattern edge part of the phase-shift photomask of exemplary embodiment of the present invention.
Fig. 8 A is according to the image of embodiments of the invention 1, and it catches after to phase shift layer patterning, and described phase shift layer is through forming with for the etchant with respect to identical, and more, towards transparent substrates below, the etch-rate having is larger.With reference to figure 8A, can see, the slope in the cross section of phase shift layer pattern edge part is to form the etch-rate of topmost thin film of phase shift layer and precipitous formation by increase.In this case, the coboundary in phase shift layer pattern and the tail dimension between lower limb are about 60nm.Therefore, can confirm, the slope of phase shift layer pattern edge part is improved.
Fig. 8 B is according to the image of embodiments of the invention 2, it catches after to phase shift layer patterning, and described phase shift layer is through forming the etch-rate make to be arranged on central film lower than the etch-rate of film being arranged on the above and below of central film.With reference to figure 8B, can see, the slope in the cross section of phase shift layer pattern edge is to improve by increasing the etch-rate of the superiors' film.In this case, can confirm, the coboundary in phase shift layer pattern and the tail dimension between lower limb are about 100nm.
Fig. 8 C is according to the image of embodiments of the invention 3, and it catches after to phase shift layer patterning, and described phase shift layer makes topmost thin film have large etch-rate through forming.With reference to figure 8C, can see, the slope in the cross section of phase shift layer pattern edge part is improved.In this case, can confirm, the coboundary in phase shift layer pattern and the tail dimension between lower limb are 90nm.
according to the assessment of the phase shift layer of comparison example
Fig. 9 shows the phase shift layer pattern according to the phase-shift photomask of comparison example 1.In comparison example 1, phase shift layer forms with CrCON individual layer.With reference to figure 9, can see, because phase shift layer is by isotropically etching, thus the slope in the cross section of phase shift layer pattern edge part gently forms and phase shift layer pattern between border be unsharp.In this case, can confirm, the coboundary in phase shift layer pattern and the tail dimension between lower limb are about 150nm.
As mentioned above, in the present invention, for the manufacture of the phase shift layer of large area FPD device, be to form with layer or the successive layers with the multi-layered type that forms difference and different at least two films of etch-rate.
Therefore, the thickness of phase shift layer can reduce.In addition, the slope in the cross section of marginal portion can form in the patterning process of phase shift layer precipitously, and making the border between phase shift layer pattern can be clearly.Therefore, can guarantee the homogeneity of phase shift layer, and can produce and there is the more large area FPD product of fine pattern.
Although described the present invention in conjunction with exemplary embodiment of the present invention, scope of the present invention is not limited to the specific embodiment of the present invention above.One of ordinary skill in the art will understand, and without departing from the spirit and scope of the present invention, can carry out variations and modifications.Therefore, scope of the present invention is not to be limited by the specific embodiment of the present invention, but is limited by appended claims, and all differences within the scope of this should be interpreted as comprising in the present invention.
Claims (18)
1. for a phase-shift photomask of flat-panel monitor (FPD), it comprises the phase shift layer pattern being arranged in transparent substrates,
Wherein said phase shift layer pattern has at least two structures that film is mutually stacking.
2. photomask according to claim 1, wherein in the marginal portion of described phase shift layer pattern, the tail dimension between coboundary and lower limb is to change from 0nm to 100nm.
3. photomask according to claim 1, each film that wherein forms described phase shift layer pattern comprises following at least one metal material: chromium (Cr), aluminium (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulphur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb) and silicon (Si), or except above-mentioned material, also further comprise following at least one material: nitrogen (N), oxygen (O) and carbon (C).
4. photomask according to claim 1, each film that wherein forms described phase shift layer pattern is by coming etched material form and have different forming with same etch agent, and described phase shift layer pattern is by forming at least one times having stacks of thin films described in each of different compositions.
5. photomask according to claim 1, wherein forms film described in each of described phase shift layer pattern and is formed by following a kind of film: Cr film, CrO film, CrN film, CrC film, CrON film, CrCN film, CrCO film and CrCON film.
6. photomask according to claim 1, wherein, for same etch agent, the etch-rate that forms each film of described phase shift layer pattern upwards reduces gradually from described transparent substrates.
7. photomask according to claim 1, wherein forms each film of described phase shift layer pattern through forming, and makes for same etch agent, is arranged on the etch-rate of central film lower than the film being arranged on the above and below of central described film.
8. photomask according to claim 1, the thickness of wherein said phase shift layer pattern is
extremely
and forming the thickness of film described in each of described phase shift layer pattern is
extremely
9. photomask according to claim 1, phase differential between the exposure that wherein said phase shift layer pattern and wavelength are 200nm to 600nm is 160 ° to 200 °, transmittance is 1% to 30%, and and the wavelength exposure that is 200nm to 600 between transmittance deviation be 0% to 10%
Wherein said transmittance deviation is recently to obtain by max transmissive is deducted to minimum transmittance percentage than number percent.
10. photomask according to claim 1, the phase differential deviation between each in wherein said phase shift layer pattern and i line, h line and g line is 0 ° to 50 °,
Wherein said phase differential deviation is to obtain by maximal phase parallactic angle is deducted to maximal phase parallactic angle.
11. photomasks according to claim 1, wherein said phase shift layer pattern comprises the layer of successive layers or multi-layered type, and forms each film formation individual layer or successive layers of described phase shift layer pattern.
12. photomasks according to claim 1, further comprise the functional layer pattern being arranged on above or below described phase shift layer pattern.
13. photomasks according to claim 12, wherein said functional layer pattern comprises following at least one pattern: the light shield layer pattern that comprises light shield layer and anti-reflecting layer (ARL), semitransmissive layer pattern, etch stop layer pattern and hard mask layer pattern.
14. photomasks according to claim 12, wherein said functional layer pattern is the light shield layer pattern that comprises light shield layer and anti-reflecting layer, and described light shield layer pattern setting is in the blind area at the edge of described transparent substrates or be arranged in primary area and described blind area.
15. photomasks according to claim 14, wherein said light shield layer pattern comprises following at least one metal material: chromium (Cr), aluminium (Al), cobalt (Co), tungsten (W), molybdenum (Mo), vanadium (V), palladium (Pd), titanium (Ti), platinum (Pt), manganese (Mn), iron (Fe), nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulphur (S), indium (In), tin (Sn), boron (B), beryllium (Be), sodium (Na), tantalum (Ta), hafnium (Hf), niobium (Nb) and silicon (Si), or except above-mentioned material, also further comprise following at least one material: nitrogen (N), oxygen (O) and carbon (C).
16. photomasks according to claim 12, wherein said functional layer pattern is the light shield layer pattern that comprises light shield layer and anti-reflecting layer, and described light shield layer pattern has the etching character identical with described phase shift layer pattern, or there is the etching selectivity for described phase shift layer pattern.
17. photomasks according to claim 12, wherein said functional layer pattern is the light shield layer pattern that comprises light shield layer and anti-reflecting layer, and the thickness of described light shield layer pattern is
extremely
18. 1 kinds of phase shifting mask blanks for flat-panel monitor (FPD), described phase shifting mask blank is for the manufacture of according to the phase-shift photomask for described FPD described in any one in claim 1 to 17, described phase shifting mask blank comprises phase shift layer, and described phase shift layer comprises at least two films that are stacked in transparent substrates.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0081883 | 2012-07-26 | ||
| KR20120081883 | 2012-07-26 | ||
| KR10-2013-0007229 | 2013-01-23 | ||
| KR1020130007229A KR101282040B1 (en) | 2012-07-26 | 2013-01-23 | Phase shift blankmask and photomask using the flat pannel display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103576441A true CN103576441A (en) | 2014-02-12 |
| CN103576441B CN103576441B (en) | 2016-08-17 |
Family
ID=48996518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310319871.5A Active CN103576441B (en) | 2012-07-26 | 2013-07-26 | Phase shifting mask blank and photomask for flat faced display |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014026281A (en) |
| KR (1) | KR101282040B1 (en) |
| CN (1) | CN103576441B (en) |
| TW (1) | TWI505019B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106324977A (en) * | 2015-06-30 | 2017-01-11 | Hoya株式会社 | Photomask, method for designing photomask, photomask blank, and method for manufacturing display device |
| CN106353963A (en) * | 2015-07-17 | 2017-01-25 | Hoya株式会社 | Phase-shift mask semi-finished product, method for manufacturing phase-shift mask and method for manufacturing display device |
| CN107203091A (en) * | 2016-03-16 | 2017-09-26 | 思而施技术株式会社 | Phase shift bottom plate mask and photomask |
| CN108319103A (en) * | 2017-01-16 | 2018-07-24 | Hoya株式会社 | The manufacturing method of its phase shifting mask of phase shift mask blank and use and the manufacturing method of display device |
| CN108319104A (en) * | 2017-01-16 | 2018-07-24 | Hoya株式会社 | Display device manufacture phase shift mask blank, display device manufacture the manufacturing method of manufacturing method and display device with phase shifting mask |
| CN108572511A (en) * | 2017-03-10 | 2018-09-25 | 思而施技术株式会社 | Protecting film and its manufacturing method for EUV lithography |
| CN109478012A (en) * | 2017-06-28 | 2019-03-15 | 爱发科成膜株式会社 | The manufacturing method of exposure mask base, phase-shift mask, intermediate tone mask, the manufacturing method of exposure mask base and phase-shift mask |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015049282A (en) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | Photomask for manufacturing a display device, manufacturing method of photomask, pattern transfer method, and manufacturing method of display device |
| JP6661262B2 (en) * | 2014-05-29 | 2020-03-11 | Hoya株式会社 | Phase shift mask blank, method for manufacturing the same, and method for manufacturing phase shift mask |
| KR101624995B1 (en) * | 2014-09-26 | 2016-05-26 | 주식회사 에스앤에스텍 | Phase shift blankmask and Photomask using the Flat Panel Display |
| JP6595766B2 (en) * | 2014-12-25 | 2019-10-23 | 住友金属鉱山株式会社 | Conductive substrate and method for manufacturing conductive substrate |
| TWI584055B (en) * | 2015-03-27 | 2017-05-21 | Ｓ＆Ｓ技術股份有限公司 | Phase shift blank mask and photomask |
| KR101801101B1 (en) * | 2016-03-16 | 2017-11-27 | 주식회사 에스앤에스텍 | Phase Shift Blankmask and Photomask |
| KR102093103B1 (en) * | 2016-04-01 | 2020-03-25 | (주)에스앤에스텍 | Phase Shift Blankmask, Photomask and method for fabricating of the same for the Flat Panel Display |
| KR101823854B1 (en) * | 2016-07-28 | 2018-03-14 | 주식회사 에스앤에스텍 | Blankmask and Photomask |
| JP2017033004A (en) * | 2016-09-21 | 2017-02-09 | Hoya株式会社 | Photomask for manufacturing display device, method for manufacturing the photomask, method for pattern transfer, and method for manufacturing display device |
| WO2018056033A1 (en) * | 2016-09-26 | 2018-03-29 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
| JP6812236B2 (en) * | 2016-12-27 | 2021-01-13 | Hoya株式会社 | A phase shift mask blank, a method for manufacturing a phase shift mask using the blank, and a method for manufacturing a display device. |
| JP6891099B2 (en) | 2017-01-16 | 2021-06-18 | Hoya株式会社 | A phase shift mask blank, a method for manufacturing a phase shift mask using the blank, and a method for manufacturing a display device. |
| JP6983641B2 (en) | 2017-01-16 | 2021-12-17 | Hoya株式会社 | A phase shift mask blank for manufacturing a display device, a method for manufacturing a phase shift mask for manufacturing a display device, and a method for manufacturing a display device. |
| JP7126836B2 (en) * | 2017-03-28 | 2022-08-29 | Hoya株式会社 | PHASE SHIFT MASK BLANK, METHOD FOR MANUFACTURING PHASE SHIFT MASK USING SAME, AND PATTERN TRANSFER METHOD |
| JP6999460B2 (en) * | 2018-03-23 | 2022-01-18 | Hoya株式会社 | A phase shift mask blank, a phase shift mask intermediate, a method for manufacturing a phase shift mask using these, and a method for manufacturing a display device. |
| JP2018173644A (en) * | 2018-05-31 | 2018-11-08 | Hoya株式会社 | Phase shift mask blank, manufacturing method of phase shift mask, and manufacturing method of display device |
| JP7217620B2 (en) * | 2018-11-22 | 2023-02-03 | アルバック成膜株式会社 | mask blanks and masks |
| JP6840807B2 (en) * | 2019-09-10 | 2021-03-10 | Hoya株式会社 | Photomask design method and manufacturing method, and display device manufacturing method |
| KR102598440B1 (en) * | 2019-12-20 | 2023-11-07 | 주식회사 에스앤에스텍 | Phase-Shift Blankmask and Photomask for use in Flat Panel Display |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1286217A2 (en) * | 2001-06-26 | 2003-02-26 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blanks, their manufacture and use |
| CN1400630A (en) * | 2001-07-26 | 2003-03-05 | 旺宏电子股份有限公司 | Chromium-free phase-shift mask and equipment using said mask |
| CN101937170A (en) * | 2009-06-30 | 2011-01-05 | 爱发科成膜株式会社 | Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask |
| CN102207675A (en) * | 2010-03-31 | 2011-10-05 | Hoya株式会社 | Photo mask and manufacturing method thereof |
| KR20110127587A (en) * | 2010-05-19 | 2011-11-25 | 주식회사 에스앤에스텍 | Thinner half-tone phase shift blankmask and manufacturing method of the same |
| KR101151685B1 (en) * | 2011-04-22 | 2012-07-20 | 주식회사 에스앤에스텍 | Blankmask and photomask |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3397933B2 (en) * | 1995-03-24 | 2003-04-21 | アルバック成膜株式会社 | Phase shift photomask blanks, phase shift photomasks, and manufacturing methods thereof. |
| JP3209257B2 (en) * | 1995-04-21 | 2001-09-17 | 凸版印刷株式会社 | Phase shift mask and method of manufacturing the same |
| JP2004302078A (en) * | 2003-03-31 | 2004-10-28 | Shin Etsu Chem Co Ltd | Phase shift mask blank, phase shift mask and method for manufacturing them |
| KR100848815B1 (en) * | 2004-11-08 | 2008-07-28 | 엘지마이크론 주식회사 | Half tone mask and fabricating method and flat panel displayq |
| TWI453531B (en) * | 2008-06-25 | 2014-09-21 | Hoya Corp | Phase shift mask blank and phase shift mask |
| TWI461833B (en) * | 2010-03-15 | 2014-11-21 | Hoya Corp | Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method |
-
2013
- 2013-01-23 KR KR1020130007229A patent/KR101282040B1/en active IP Right Grant
- 2013-07-24 JP JP2013153575A patent/JP2014026281A/en not_active Ceased
- 2013-07-26 CN CN201310319871.5A patent/CN103576441B/en active Active
- 2013-07-26 TW TW102126997A patent/TWI505019B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1286217A2 (en) * | 2001-06-26 | 2003-02-26 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blanks, their manufacture and use |
| CN1400630A (en) * | 2001-07-26 | 2003-03-05 | 旺宏电子股份有限公司 | Chromium-free phase-shift mask and equipment using said mask |
| CN101937170A (en) * | 2009-06-30 | 2011-01-05 | 爱发科成膜株式会社 | Method for manufacturing phase shift mask, method for manufacturing flat panel display, and phase shift mask |
| CN102207675A (en) * | 2010-03-31 | 2011-10-05 | Hoya株式会社 | Photo mask and manufacturing method thereof |
| KR20110127587A (en) * | 2010-05-19 | 2011-11-25 | 주식회사 에스앤에스텍 | Thinner half-tone phase shift blankmask and manufacturing method of the same |
| KR101151685B1 (en) * | 2011-04-22 | 2012-07-20 | 주식회사 에스앤에스텍 | Blankmask and photomask |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106324977A (en) * | 2015-06-30 | 2017-01-11 | Hoya株式会社 | Photomask, method for designing photomask, photomask blank, and method for manufacturing display device |
| CN106324977B (en) * | 2015-06-30 | 2023-05-12 | Hoya株式会社 | Photomask, photomask designing method, photomask blank and display device manufacturing method |
| CN106353963A (en) * | 2015-07-17 | 2017-01-25 | Hoya株式会社 | Phase-shift mask semi-finished product, method for manufacturing phase-shift mask and method for manufacturing display device |
| CN107203091A (en) * | 2016-03-16 | 2017-09-26 | 思而施技术株式会社 | Phase shift bottom plate mask and photomask |
| CN107203091B (en) * | 2016-03-16 | 2021-03-30 | 思而施技术株式会社 | Phase shift backplane mask and photomask |
| CN108319103A (en) * | 2017-01-16 | 2018-07-24 | Hoya株式会社 | The manufacturing method of its phase shifting mask of phase shift mask blank and use and the manufacturing method of display device |
| CN108319104A (en) * | 2017-01-16 | 2018-07-24 | Hoya株式会社 | Display device manufacture phase shift mask blank, display device manufacture the manufacturing method of manufacturing method and display device with phase shifting mask |
| CN108319103B (en) * | 2017-01-16 | 2023-11-28 | Hoya株式会社 | Phase shift mask blank, method for manufacturing phase shift mask using the same, and method for manufacturing display device |
| CN108319104B (en) * | 2017-01-16 | 2023-05-02 | Hoya株式会社 | Phase shift mask blank for manufacturing display device, method for manufacturing phase shift mask for manufacturing display device, and method for manufacturing display device |
| CN108572511B (en) * | 2017-03-10 | 2022-07-01 | 思而施技术株式会社 | Pellicle for EUV lithography and method for producing the same |
| CN108572511A (en) * | 2017-03-10 | 2018-09-25 | 思而施技术株式会社 | Protecting film and its manufacturing method for EUV lithography |
| CN109478012B (en) * | 2017-06-28 | 2022-05-13 | 爱发科成膜株式会社 | Mask blank, phase shift mask, halftone mask, mask blank, and method for manufacturing phase shift mask |
| CN109478012A (en) * | 2017-06-28 | 2019-03-15 | 爱发科成膜株式会社 | The manufacturing method of exposure mask base, phase-shift mask, intermediate tone mask, the manufacturing method of exposure mask base and phase-shift mask |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101282040B1 (en) | 2013-07-04 |
| TWI505019B (en) | 2015-10-21 |
| TW201405238A (en) | 2014-02-01 |
| JP2014026281A (en) | 2014-02-06 |
| CN103576441B (en) | 2016-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103576441A (en) | Phase shift blankmask and photomask using the flat panel display | |
| JP5306507B2 (en) | Blank mask and photomask | |
| JP5530075B2 (en) | Photomask blank, photomask, and manufacturing method thereof | |
| JP6626813B2 (en) | Phase inversion blank mask and photomask | |
| EP2418542B1 (en) | Binary photomask blank and binary photomask making method | |
| JP6876737B2 (en) | Phase inversion blank mask and photomask | |
| CN109491193B (en) | Photomask, method of correcting photomask, method of manufacturing photomask, and method of manufacturing display device | |
| TWI450028B (en) | Mask base and mask | |
| JP5105407B2 (en) | Photomask blank, photomask and photomask manufacturing method | |
| TWI533080B (en) | Blankmask and photomask for flat panel display | |
| TWI758382B (en) | Phase shift mask blanke, method of manufacturing a phase shift mask, and method of manufacturing a display device | |
| JP2017033004A (en) | Photomask for manufacturing display device, method for manufacturing the photomask, method for pattern transfer, and method for manufacturing display device | |
| KR101624995B1 (en) | Phase shift blankmask and Photomask using the Flat Panel Display | |
| EP2998793B1 (en) | Photomask blank | |
| JP5004283B2 (en) | FPD device manufacturing mask blank, FPD device manufacturing mask blank design method, and FPD device manufacturing mask manufacturing method | |
| EP3660587B1 (en) | Method for preparing a photomask blank | |
| CN110456608B (en) | Phase shift blank mask and photomask | |
| KR20170112163A (en) | Phase shift blankmask, Photomask and method for fabricating of the same for the Flat Panel Display | |
| KR102093103B1 (en) | Phase Shift Blankmask, Photomask and method for fabricating of the same for the Flat Panel Display | |
| KR101823854B1 (en) | Blankmask and Photomask | |
| JP5414079B2 (en) | FPD device manufacturing mask blank, photomask, and FPD device manufacturing mask blank design method | |
| KR20230050740A (en) | Blankmask and Photomask for Flat Panel Display and method for fabrication of the same | |
| KR102093101B1 (en) | Multi-gray scale photomask and manufacturing method thereof | |
| KR20200054620A (en) | Blankmask for Flat Panel Display | |
| KR20170073232A (en) | Multi-tone Photomask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |