JP5414079B2 - FPD device manufacturing mask blank, photomask, and FPD device manufacturing mask blank design method - Google Patents

Description

  The present invention relates to a mask blank and a photomask, and more particularly to a mask blank (a blank for a photomask) for manufacturing an FPD device, a photomask (transfer mask) manufactured using the mask blank, and the like.

In recent years, in the field of large FPD masks, attempts have been made to reduce the number of masks using a gray tone mask having a semi-transparent region (so-called gray tone portion) (Non-Patent Document 1).
Here, as shown in FIGS. 6 (1) and 7 (1), the gray tone mask has a light shielding portion 1, a transmission portion 2, and a gray tone portion 3 which is a semi-transparent region on a transparent substrate. And have. The gray tone portion 3 has a function of adjusting the transmission amount, for example, a region where a gray-tone mask semi-transparent film (half-transparent film) 3a ′ is formed as shown in FIG. Alternatively, as shown in FIG. 7 (1), a gray tone pattern (a fine light shielding pattern 3a and a fine transmission portion 3b below the resolution limit of a large LCD exposure machine using a gray tone mask) is formed. For the purpose of reducing the amount of light transmitted through these regions and reducing the amount of irradiation by this region, and controlling the reduced film thickness after development of the photoresist corresponding to the region to a desired value. It is formed.
When a large graytone mask is used in a large projection apparatus of a mirror projection method or a lens projection method using a lens, the exposure light passing through the graytone portion 3 as a whole is insufficient in exposure amount. The positive photoresist exposed through the tone portion 3 remains on the substrate only by reducing the film thickness. That is, since the resist can have a difference in solubility in the developer between the portion corresponding to the normal light-shielding portion 1 and the portion corresponding to the gray tone portion 3 depending on the exposure amount, the resist shape after development is shown in FIG. ) And FIG. 7B, the portion 1 ′ corresponding to the normal light-shielding portion 1 is, for example, about 1 μm, and the portion 3 ′ corresponding to the gray tone portion 3 is, for example, about 0.4 to 0.5 μm. The portion corresponding to the portion 2 is a portion 2 ′ without resist. Then, the first etching of the substrate to be processed is performed in the portion 2 ′ without the resist, the resist in the thin portion 3 ′ corresponding to the gray tone portion 3 is removed by ashing or the like, and the second etching is performed in this portion. The process for two conventional masks is performed with one mask to reduce the number of masks.
Monthly FPD Intelligence, p.31-35, May 1999 “The story of photomask technology”, Isao Tanabe, Morihisa Homoto, Hiroshi Takebana, published by the Industrial Research Committee, “Chapter 4 Practical Photomasks for LCD” p.151-180

By the way, an LSI mask for manufacturing a semiconductor device such as a microprocessor, a semiconductor memory, or a system LSI is relatively small at a maximum of about 6 inches (132 mm) square, and is a stepper (shot-step exposure) system. It is often used by being mounted on a reduction projection exposure apparatus. In addition, the minimum line width of the mask pattern formed on the LSI mask is about 0.26 μm (the minimum line width of the pattern formed on the wafer is about 0.07 μm).
In manufacturing such an LSI mask, since the above high-definition pattern formation is generally required, an electron beam resist is applied on the mask blank (resist film thickness N is usually relatively small, 400 to 500 nm), and an electron beam Drawing is performed to form a resist pattern, and a mask pattern is formed using the resist pattern as a mask.
Furthermore, in a small mask blank for manufacturing an LSI mask, a resist is applied by spin coating in consideration of application accuracy, mass productivity, cost, and the like for the small mask blank.
On the other hand, a large mask for FPD (flat panel display) is relatively large at least about 330 mm × 450 mm (maximum about 1220 mm × 1400 mm), and mirror projection (same size projection exposure by scanning exposure method). ) And lens projection type exposure apparatuses. The minimum line width of the pattern formed on the large mask for FPD is about 1 μm or less, and the minimum line width of the pattern formed on the large glass substrate for transfer is about 2 to 3 μm. Larger than the line width.
In manufacturing such a large mask for FPD, a photoresist is applied on the mask blank (resist film thickness N is usually relatively large, 1000 nm), laser drawing is performed to form a resist pattern, and this resist pattern is masked. A mask pattern is formed. Furthermore, in a large mask blank for manufacturing a large mask for FPD, a slit type in which a resist is applied by scanning a slit-shaped nozzle on the substrate in consideration of application accuracy, yield, etc. for the large mask blank. A resist is applied by a resist coater.

As described above, large-scale FPD mask blanks and masks have different processes (drawing methods and resist coating methods) and different conditions (resist type and resist film thickness) from LSI masks due to differences in mask sizes. When these processes and conditions are applied to a large-size FPD mask blank and a mask, it is necessary to examine problems caused by the large size of the substrate.
An object of the present application is to devise a mask blank and a photomask suitable for a process (drawing method and resist coating method) and a different condition (resist type and resist film thickness) in a large FPD mask.

Under the above object, the present inventor has intensively studied and developed a large mask blank for FPD and a large mask for FPD. As a result, the following was found.
The film thickness of the resist applied on the large mask blank for FPD is currently set to about 1000 nm so that a standing wave due to the laser drawing wavelength is not substantially generated. However, the in-plane film thickness variation n of the resist film formed using the slit type resist coater is relatively large, and the in-plane film thickness variation width 2n of the resist film thickness is a half wavelength 1 of the laser drawing wavelength L. / 2L. In this case, a film thickness portion where the resist film thickness is an integral multiple of the half wavelength is generated in the plane, and in the film thickness portion where the resist film thickness is an integral multiple of the half wavelength, a laser that is incident on the resist film and passes through the resist film. The incident light of the drawing light and the reflected light of the laser drawing light that passes through the resist film and is reflected by the film surface of the light-shielding film interfere with each other to generate a standing wave having a relatively small amplitude intensity, and to shield the light. The reflected light of the laser drawing light reflected by the film surface of the conductive film passes through the resist film and is reflected by the film surface of the resist film, as if there is a wall facing the distance that is an integral multiple of a half wavelength. Therefore, each time reflection is repeated, a standing wave having a relatively large amplitude intensity is generated as a combined wave, and a phenomenon that is regarded as resonance occurs. Such a special standing wave is called a reference resonance mode.
In the large mask blank for FPD, the standing wave of the reference resonance mode generated at the film thickness portion where the resist film thickness is an integral multiple of the half wavelength is based on the photosensitive action of the resist occurring at the antinode of the standing wave of the reference resonance mode. Then, the present inventors have found that unevenness (jagged edges) is generated on the resist pattern edge when the resist pattern is viewed in plan, and in the large mask blank for FPD, the next generation is performed by wet etching using the resist pattern as a mask. When a mask pattern of 1 μm or less (for example, a pattern composed of a fine light-shielding pattern and a fine transmissive portion below the resolution limit of a large FPD exposure machine) is formed, a jaggedness exceeding 0.1 μm is generated. And this jaggedness has been found to cause display unevenness in FPD devices.
Further, in the case of a large mask for FPD, it is considered necessary to further reduce the resist film thickness from the viewpoint of pattern miniaturization and improvement of pattern accuracy. In this case, the resist film thickness N and the in-plane film are also required. In the range of thickness variation, unevenness of the resist pattern edge due to standing wave in the reference resonance mode occurs at a film thickness portion that is an integral multiple of the half wavelength of the laser drawing wavelength, which causes display unevenness in FPD devices. Become.

  In order to solve the above problems, the present inventors have found that the light-shielding film is a film for a laser drawing wavelength that can substantially avoid the influence on the resist film pattern due to the influence of the standing wave in the reference resonance mode. The inventors have found that it is effective to make the surface reflectance, and have reached the present invention.

The method of the present invention has the following configuration.
(Configuration 1) A mask blank for manufacturing an FPD device for forming a resist film for laser drawing on the light-shielding film, having at least a light-shielding film on the light-transmitting substrate,
The mask blank for manufacturing an FPD device, wherein the light-shielding film is a film controlled so that a film surface reflectance with respect to a laser drawing wavelength is 15% or less.
(Configuration 2)
2. The mask blank for manufacturing an FPD device according to Configuration 1, wherein the laser drawing wavelength is a wavelength selected from a wavelength range of 350 nm to 500 nm.
(Configuration 3)
The mask blank for manufacturing an FPD device according to Configuration 1 or 2, wherein the light-shielding film has at least an antireflection layer and a crystallinity control layer for controlling crystallinity of the antireflection layer.
(Configuration 4)
4. The mask blank for manufacturing an FPD device according to any one of claims 1 to 3, wherein a minimum reflectance that minimizes a film surface reflectance of the light-shielding film is in a wavelength range of 350 nm to 500 nm.
(Configuration 5)
The mask blank for manufacturing an FPD device according to any one of claims 1 to 4, wherein the reflectance curve of the light-shielding film is configured to draw a convex curve downward.
(Configuration 6)
6. A mask blank for manufacturing an FPD device according to any one of 1 to 5, wherein a resist film for laser drawing is provided on the light-shielding film.
(Configuration 7)
The mask blank for manufacturing an FPD device according to Configuration 6, wherein the resist film has a thickness of 400 to 1200 nm.
(Configuration 8)
The mask blank for manufacturing an FPD device according to Configuration 6, wherein the resist film has a thickness of 400 to 800 nm.
(Configuration 9)
It is manufactured by using the mask blank according to any one of Structures 6 to 8, performing laser drawing on the resist film to form a resist pattern, and forming the mask pattern using the resist pattern as a mask. Photomask for manufacturing FPD devices.

  ADVANTAGE OF THE INVENTION According to this invention, the mask blank and photomask suitable for the process (drawing method and resist coating method) and different conditions (resist kind and resist film thickness) in a large-sized mask for FPD can be provided.

Hereinafter, the present invention will be described in detail.
The mask blank for manufacturing the FPD device of the present invention is
An FPD device manufacturing mask blank having at least a light-shielding film on a light-transmitting substrate, and forming a resist film for laser drawing on the light-shielding film, wherein the light-shielding film is a laser drawing The film is characterized in that the film surface reflectance with respect to the wavelength is controlled to be 15% or less (Configuration 1).

In the present invention, by setting the film surface reflectance with respect to the laser drawing wavelength to 15% or less, it is possible to prevent the unevenness (jagged edges) of the resist pattern edge due to the standing wave in the reference resonance mode. In this way, a mask pattern of 1 μm or less which is the next generation standard (for example, a pattern composed of a fine light-shielding pattern and a fine transmission part below the resolution limit of a large FPD exposure machine) is formed by wet etching using a resist pattern as a mask. In this case, it is possible to prevent generation of unevenness of more than 0.1 μm and display unevenness in the FPD device due to the unevenness.
Further, from the viewpoint of pattern miniaturization and improvement of pattern accuracy, it is considered that further thinning of the resist film (for example, 400 nm to 800 nm) is necessary. In this case as well, the resist by the standing wave of the reference resonance mode is used. Irregularities (jagged edges) of the pattern edge occur, and the occurrence of display unevenness in the FPD device due to the jagged edges can be prevented.
In the present invention, the light-shielding film is more preferably a film whose film surface reflectance with respect to the laser drawing wavelength is controlled to be 12% or less, more preferably 10% or less.

In the present invention, the laser drawing wavelength is selected from a wavelength range of 350 nm to 500 nm (Configuration 2). For example, examples of laser drawing wavelengths include 365 nm, 405 nm, 413 nm, 436 nm, 442 nm, and 488 nm.
Moreover, in this invention, it is set as the mask blank for FPD device manufacture with the resist film which has a resist film for laser drawing on the said light-shielding film (structure 3). At that time, in the present invention, the film thickness of the resist film is 400 to 1200 nm (Configuration 4), and preferably 400 to 800 nm from the viewpoint of pattern miniaturization and improvement of pattern accuracy. (Configuration 5). As described above, when forming a relatively thick resist film (for example, 900 nm to 1200 nm) in the film thickness range on the large mask blank for FPD, the in-plane variation width 2n of the film thickness of the resist film is large. This is because the problem of affecting the resist film pattern is caused by the standing wave of the reference resonance mode, so that the problem does not occur. In addition, it is necessary to reduce the thickness of the resist film from the viewpoint of pattern miniaturization and improvement of pattern accuracy. However, in the case of thinning the resist film, the resist film pattern is affected by the standing wave in the reference resonance mode. This is to prevent a problem and to eliminate the limitation of thinning.

  In the present invention, while discharging the resist solution from a nozzle having a resist solution supply port extending in one direction, the resist film is formed by relatively moving the nozzle in a direction intersecting the one direction with respect to the light-shielding film surface. This is particularly useful when a resist is applied on a light-shielding film surface having a large area by a so-called slit coater. Further, in the present invention, the slit coater device applies a resist to a substrate held downward by causing the nozzle tip to scan the substrate with a resist solution that has been raised using a capillary phenomenon by a capillary nozzle. This is particularly useful when the device is a device (see eg FIG. 3). In these cases, the in-plane film thickness variation width 2n is approximately the same as the half wavelength 1 / 2L of the laser drawing wavelength L depending on the surface state of the light-shielding film, and this affects the resist film pattern. This is because it is highly likely to occur.

In addition, as a result of examining various film materials, the following was found.
(I) In the case of a chromium oxide film-based antireflection film (for example, a single layer of CrO film), since the film contains O (there is much O in the film), the laser drawing wavelength (for example, 365 nm, 405 nm, 413 nm) 436 nm, 442 nm), and a broader band including such a band, the curve (inclination) of the spectral reflectance line is tight, and the fluctuation range of the spectral reflectance tends to increase.
(Ii) Compared with a chromium oxide film type antireflection film, a chromium oxynitride type antireflection film (for example, CrON) has a laser drawing wavelength band (for example, 365 nm, 405 nm, 413 nm, 436 nm, 442 nm), and The spectral reflectance line curve (inclination) is gentle in a wider band including such a band, and the fluctuation range of the spectral reflectance is preferably small.
However, in order to solve the problems that affect the resist film pattern such as pattern roughness due to in-plane variation of the slit coater due to the surface condition variation of the film surface due to the pursuit of the lower limit of the film surface reflectance with respect to the laser drawing wavelength Even a chromic oxynitride-based antireflection film is not suitable for achieving such an object, and it is necessary to use any light-shielding film below the chromic oxynitride-based antireflection film. It is not suitable for achieving the purpose. Accordingly, it has been found that it is preferable to find and use a light-shielding film that satisfies a predetermined condition suitable for achieving the object.
In order to achieve both of the above objects, by forming a chromium nitride-based film (for example, CrN) in the lower layer of the chromic oxynitride-based antireflection film, the crystallinity of the film formed thereon is fine. In addition, since the film is formed uniformly, the surface state of the light-shielding film is stable, and variation in in-plane film thickness can be suppressed even when a resist film is formed by a slit coater. Furthermore, the lower limit of the film surface reflectance with respect to the laser drawing wavelength can be pursued, and the fluctuation range of the spectral reflectance can be reduced, which is preferable.

The mask blank and the mask for manufacturing the FPD device according to the present invention include an embodiment having at least a light-shielding film on the light-transmitting substrate. Specifically, for example, as shown in FIG. 4, a light-shielding film 12 is formed on a light-transmitting substrate 10, and patterning is performed on the light-shielding film 12 to form a gray-tone pattern 12a and a normal light-shielding film pattern 12b. The aspect formed is included.
In the mask blank and the mask for manufacturing the FPD device according to the present invention, the light shielding film has a minimum reflectance in which the film surface reflectance of the light shielding film is minimized within a wavelength range of 350 nm to 450 nm. A controlled membrane is preferred.
The reason for this is that a film in which the minimum reflectivity (that is, the position of the bottom peak) at which the film surface reflectivity of the light-shielding film is minimized is within the wavelength range of 350 nm to 450 nm, manufactures an FPD device. This is because the spectral reflectance value hardly fluctuates greatly with respect to the shift in the vertical and horizontal directions of the spectral curve due to process fluctuations, etc., with respect to the laser drawing wavelength generally used when manufacturing a mask for this purpose.
As a light-shielding film in which the reflectance value does not fluctuate greatly (the shift is small) with respect to the shift in the left-right direction of the spectral curve due to process fluctuations as described above, a crystal that controls the crystallinity of the upper film A light shielding film comprising at least a property control layer, a lower layer portion having a light shielding function, and an upper layer portion having an antireflection function is preferable.
Here, the crystallinity control layer is a portion for controlling the crystallinity of a film formed thereon. The lower layer portion having a light shielding function is a portion that has a high light shielding performance and exhibits most or all of the required light shielding performance. Further, the upper layer portion having the antireflection function is a portion that is formed on the lower layer portion having the light shielding function, and reduces the reflectance of the lower layer portion having the light shielding function, thereby expressing the antireflection function.

In the mask blank and the mask for manufacturing the FPD device according to the present invention, the light-shielding film includes a chromium nitride-based crystallinity control layer for controlling crystallinity, and a chromium or chromium carbide-based lower layer having a light-shielding function. And an upper layer portion of a chromium oxynitride system having an antireflection function, and the crystallinity control layer, the lower layer portion and the upper layer portion are preferably optically designed and created so as to satisfy the above requirements.
This is because films made of these materials (for example, films made of CrN crystallinity control layer / CrC light shielding layer (lower layer) / CrON antireflection layer (upper layer), CrN crystallinity control layer / CrCN light shielding properties) Layer (lower layer) / CrON antireflective layer (upper layer), etc.), compared to other material films, adjustment of film composition, production conditions, selection and control of production equipment, etc. Depending on the control, the material of the light-shielding film, etc., the position of the bottom peak, the film configuration, etc., the fluctuation range of the film surface reflectance of the light-shielding film is in the range of less than 2% in the wavelength band ranging from 350 nm to 450 nm. This is because a film in which the spectral reflectance value does not fluctuate greatly with respect to the shift in the left-right direction of the spectral curve due to process variation or the like can be obtained. In addition, with the film having such a configuration, the lower limit of the film surface reflectance with respect to the laser drawing wavelength can be pursued, and in-plane film thickness variation can be suppressed even when a resist film is formed by a slit coater.

  In the mask blank and the mask for manufacturing the FPD device according to the present invention, it is preferable that the light-shielding film is continuously formed by an in-line type sputtering apparatus. In the film composed of the above-described crystallinity control layer / light-shielding layer (lower layer part) / antireflection layer (upper layer part) continuously formed by an in-line type sputtering apparatus, an oxide layer is not formed at the interface of each film. It becomes easy to strictly control optical characteristics (reflectance, etc.).

The mask blank and the mask for manufacturing the FPD device according to the present invention include a mode in which the semi-transparent film for gray tone mask and the light-shielding film are provided on the translucent substrate. Specifically, for example, as shown in FIG. 5, a gray-tone mask semi-transparent film 11 and a light-shielding film 12 are formed in this order on a translucent substrate 10, and patterning of these films is performed. And an embodiment such as a gray-tone mask of a semi-transparent film underlay (pre-attachment) type formed by forming a semi-transparent film pattern for a gray tone mask and a light-shielding film pattern.
Here, as a material of the semi-transparent film, a MoSi-based material containing Mo and Si, a transition metal such as metal and silicon (MSi, M: Mo, Ni, W, Zr, Ti, Cr, Ta, etc.) ), Oxynitrided metal and silicon (MSSiON), oxycarburized metal and silicon (MoSiCO), oxynitrided and carbonized metal and silicon (MSiCON), oxidized metal and silicon (MSio), nitrided metal And silicon (MoSiN).

In the present invention, examples of the material for the translucent substrate include synthetic quartz, soda lime glass, and alkali-free glass.
In the present invention, examples of the laser drawing resist include novolac-based photoresists.
In the present invention, the mask blank for manufacturing an FPD device includes a mask blank having at least a light-shielding film on a light-transmitting substrate before forming a resist film for laser drawing.

In the present invention, mask blanks and masks for manufacturing FPD devices include mask blanks and masks for manufacturing FPD devices such as LCD (liquid crystal display), plasma display, and organic EL (electroluminescence) display. .
Here, the LCD manufacturing mask includes all masks necessary for LCD manufacturing. For example, TFTs (thin film transistors), particularly TFT channel portions and contact hole portions, low-temperature polysilicon TFTs, color filters, reflectors ( A black matrix), and the like. Other masks for manufacturing display devices include all masks necessary for manufacturing organic EL (electroluminescence) displays, plasma displays, and the like.

  The photomask for manufacturing the FPD device according to the present invention uses the mask blank for manufacturing the FPD device according to the present invention, performs laser drawing on the resist film formed on the mask blank, A resist pattern is formed, and a mask pattern composed of a light-shielding film pattern is formed using the resist pattern as a mask (Configuration 6).

Hereinafter, the present invention will be described in more detail based on examples.
Example 1
Using a large in-line type sputtering apparatus on a large glass substrate (synthetic quartz (QZ) 10 mm thickness, size 850 mm × 1200 mm), a crystallinity control layer, a lower layer portion having a light shielding function, and an upper layer portion having an antireflection function A light-shielding film composed of For film formation, Cr targets are arranged in each space (sputtering chamber) continuously arranged in the large-scale in-line sputtering apparatus with respect to the substrate transport direction. First, a CrN layer using Ar gas and N ₂ gas as sputtering gases. (Film for the purpose of controlling the crystallinity of the film to be formed thereafter) is 150 angstrom, then Ar gas and CH ₄ gas are used as sputtering gas, and CrC layer (lower layer part having a light shielding function) is 650 angstrom, A mask blank was prepared by continuously forming a CrON layer (an upper layer portion having an antireflection function) at 250 angstroms using Ar gas and NO gas as sputtering gases. Each film was a composition gradient film. In addition, the CrC layer (the lower layer portion having a light shielding function) contains N (nitrogen) due to the N ₂ gas or the NO gas used when forming the CrN layer or the CrON layer (the upper layer portion having an antireflection function). The CrN layer, the CrC layer (the lower layer portion having a light shielding function), and the CrON layer (the upper layer portion having an antireflection function) all contained Cr and N.
The spectral reflectance line of the mask blank is shown in FIG. The spectral reflectance was measured with a spectrophotometer.
In the spectral reflectance line shown in FIG. 1, a laser drawing wavelength band (350 nm to 500 nm) including a laser drawing wavelength (for example, 365 nm, 405 nm, 413 nm, 436 nm, 442 nm) used when manufacturing a large mask for FPD. The film surface reflectance of the light-shielding film was 15% or less. Further, in the wavelength band ranging from 350 nm to 450 nm including the laser drawing wavelength band, the fluctuation of the film surface reflectance is within a range of less than 2% (the fluctuation of the film surface reflectance is 1 in the wavelength band ranging from 365 nm to 450 nm). % Within the range).
Using the mask blank prepared above, a novolak-type laser drawing photoresist is applied using the slit coater shown in FIG. 3 (resist film thickness range: 1000 nm ± 100 nm), and pattern drawing is performed on the resist film by laser drawing. Then, a resist pattern is formed by development, and using this resist pattern as a mask, a three-layered film (CrN layer, CrC layer, CrON layer) is integrally patterned by wet etching, and 5 μm wide normal patterns 12b and 1 μm are formed. A large-size mask for FPD having a gray-tone pattern with a width (a pattern composed of a fine light-shielding pattern and a fine transmission portion below the resolution limit of a large-size FPD exposure machine) 12a was produced (see FIG. 4).
In the above process, when both the normal pattern and the gray tone pattern are observed with respect to both the resist pattern and the mask pattern with a scanning electron microscope (SEM), the unevenness of the pattern edge when the pattern is viewed in plan (so-called jagged) Was less than 0.1 μm.
The FPD device manufactured using the obtained large-size mask for FPD was also excellent with no display unevenness.

(Example 2)
In Example 1 above, a resist pattern was formed in the same manner as in Example 1 except that a CrON layer (an upper layer portion having an antireflection function) was formed with a thickness of 250 Å using Ar gas and NO gas as sputtering gases. A large-sized mask for FPD was produced.
In the spectral reflectance line shown in FIG. 2, a laser drawing wavelength band (365 nm to 450 nm) including a laser drawing wavelength (for example, 365 nm, 405 nm, 413 nm, 436 nm, 442 nm) used when manufacturing a large mask for FPD. The film surface reflectance of the light-shielding film was 12% or less. Further, in the wavelength band ranging from 350 nm to 450 nm including the laser drawing wavelength band, the fluctuation of the film surface reflectance is within a range of less than 2% (the fluctuation of the film surface reflectance is 1 in the wavelength band ranging from 365 nm to 450 nm). % Within the range).
When both the resist pattern and the mask pattern were observed with a scanning electron microscope (SEM), the unevenness of the pattern edge (so-called jaggedness) was as good as less than 0.1 μm as in Example 1.

(Example 3)
In Example 1 above, a resist pattern was formed in the same manner as in Example 1 except that a CrON layer (an upper layer portion having an antireflection function) was formed to a thickness of 320 Å using Ar gas and NO gas as sputtering gases. A large-sized mask for FPD was produced.
In the spectral reflectance line shown in FIG. 2, a laser drawing wavelength band (365 nm to 450 nm) including a laser drawing wavelength (for example, 365 nm, 405 nm, 413 nm, 436 nm, 442 nm) used when manufacturing a large mask for FPD. The film surface reflectance of the light-shielding film was 11% or less. Further, in the wavelength band ranging from 350 nm to 450 nm including the laser drawing wavelength band, the fluctuation of the film surface reflectance is within a range of less than 2% (the fluctuation of the film surface reflectance is 1 in the wavelength band ranging from 365 nm to 450 nm). % Within the range).
When both the resist pattern and the mask pattern were observed with a scanning electron microscope (SEM), the unevenness of the pattern edge (so-called jaggedness) was as good as less than 0.1 μm as in Example 1.

Example 4
In Example 1 above, a resist pattern was formed in the same manner as in Example 1 except that a CrON layer (an upper layer portion having an antireflection function) was formed to a thickness of 200 Å using Ar gas and NO gas as sputtering gases. A large-sized mask for FPD was produced.
In the spectral reflectance line shown in FIG. 2, a laser drawing wavelength band (365 nm to 450 nm) including a laser drawing wavelength (for example, 365 nm, 405 nm, 413 nm, 436 nm, 442 nm) used when manufacturing a large mask for FPD. The film surface reflectance of the light-shielding film was 14% or less. Further, in the wavelength band ranging from 350 nm to 450 nm including the laser drawing wavelength band, the fluctuation of the film surface reflectance is within a range of less than 2% (the fluctuation of the film surface reflectance is 1 in the wavelength band ranging from 365 nm to 450 nm). % Within the range).
When both the resist pattern and the mask pattern were observed with a scanning electron microscope (SEM), the unevenness of the pattern edge (so-called jaggedness) was as good as less than 0.1 μm as in Example 1.

(Example 5)
A resist pattern was formed in the same manner as in Example 1 except that a resist film having a plurality of thicknesses was formed in a thickness of 400 nm to 800 nm in Example 1, and a large mask for FPD was produced.
When both the resist pattern and the mask pattern were observed with a scanning electron microscope (SEM), the pattern edge irregularities (so-called jagged edges) were as good as less than 0.1 μm as in Example 1.

(Comparative example)
A light-shielding film was formed on a large glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) using a sputtering apparatus. In the film formation, Cr targets are arranged in two sputtering chambers, respectively, Ar gas is used as a sputtering gas, Cr film (light-shielding film) is 900 angstrom, and then Ar gas and O ₂ gas are used as sputtering gas, CrO film (reflection) A mask blank was prepared by forming a (preventive film) 300 angstrom film.
As a result, the film surface of the light-shielding film in a laser drawing wavelength band (350 nm to 500 nm) including a laser drawing wavelength (for example, 365 nm, 405 nm, 413 nm, 436 nm, 442 nm) used when manufacturing a large mask for FPD The reflectivity was more than 15% (18.3%). Further, in the wavelength band ranging from 350 nm to 450 nm including the laser drawing wavelength band, the variation of the film surface reflectance was more than 2% (4.2%).
Using the mask blank prepared above, a resist film is formed on the light-shielding film in the same manner as in Example 1, a pattern is drawn on the resist film by laser drawing, a resist pattern is formed by development, and this resist pattern is masked As a result, a two-layer film (Cr film, CrO film) is integrally patterned by wet etching, and a normal pattern 12b having a width of 5 μm and a gray tone pattern having a width of 1 μm (below the resolution limit of a large FPD exposure machine) A large-sized mask for FPD having a fine light-shielding pattern and a fine transmission part pattern 12a was produced.
In the above process, when both the normal pattern and the gray tone pattern are observed with respect to both the resist pattern and the mask pattern with a scanning electron microscope (SEM), the unevenness of the pattern edge when the pattern is viewed in plan (so-called jagged) Was over 0.1 μm (0.3 μm).
In the FPD device manufactured using the obtained large-sized mask for FPD, display unevenness occurred.

  While the present invention has been described with reference to the preferred embodiments, the present invention is not limited to the above embodiments.

It is a figure which shows the spectral transmittance | permeability of the light-shielding film which has the reflection preventing function created in the Example. It is a figure which shows the spectral transmittance | permeability of the light-shielding film which has the reflection preventing function created in the Example. It is a schematic diagram for demonstrating the slit coater apparatus used by the Example and the comparative example. It is a figure for demonstrating the aspect of the large sized mask for FPD. It is a figure for demonstrating the other aspect of the large sized mask for FPD. It is a figure for demonstrating the gray tone mask which has a translucent film | membrane, (1) is a fragmentary top view, (2) is a fragmentary sectional view. It is a figure for demonstrating the gray-tone mask which has a fine light-shielding pattern below a resolution limit, (1) is a fragmentary top view, (2) is a fragmentary sectional view.

DESCRIPTION OF SYMBOLS 1 Light-shielding part 2 Transmission part 3 Gray tone part 3a Fine light-shielding pattern 3b Fine transmission part 3a 'Semi-transmissive film 10 Translucent substrate 11 Semi-transmissive film 12 Light-shielding film

Claims (13)

A mask blank for manufacturing an FPD device for forming a resist film for laser drawing on a light-shielding film on a light-transmitting substrate with a slit coater device,
The light-shielding film is a film controlled so that the fluctuation range of the film surface reflectance is in a range of less than 2% in a wavelength band extending from 350 nm to 450 nm including the laser drawing wavelength.
The light-shielding film is such that the reflectance curve of the light-shielding film has a downward convex curve in the wavelength band, and the minimum reflectance that minimizes the film surface reflectance is in the range of the wavelength band. Controlled membrane,
The light-shielding film has a lower layer portion having a light shielding function and a chromium oxynitride upper layer portion having an antireflection function,
The slit coater device discharges a resist solution from a nozzle having a resist solution supply port extending in one direction, and relatively moves the nozzle in a direction intersecting the one direction with respect to the surface of the light-shielding film to form a resist film. A mask blank for manufacturing an FPD device, characterized by being formed. The light-shielding film, according to the wavelength band over 365nm~450nm containing the laser drawing wavelength variation width of film surface reflectance, characterized in that a control membrane to be in the range of less than 1% Item 10. A blank for manufacturing an FPD device according to Item 1 . The mask blank for manufacturing an FPD device according to claim 1 , wherein the light-shielding film is formed on the light- transmitting substrate having a size of 330 mm × 450 mm or more using a large in-line sputtering apparatus .   4. The light-shielding film comprises at least a crystallinity control layer for controlling crystallinity of an upper film, a lower layer portion having a light shielding function, and an upper layer portion having an antireflection function. The mask blank for FPD device manufacture of description. The mask blank for manufacturing an FPD device according to claim 4, wherein the crystallinity control layer is a chromium nitride film.   6. A mask blank for manufacturing an FPD device according to claim 1, further comprising a resist film for laser drawing on the light-shielding film.   The mask blank for manufacturing an FPD device according to claim 6, wherein the resist film has a thickness of 1200 nm or less.   The FPD device manufacturing mask blank according to claim 6, wherein the resist film has a thickness of 400 nm or more.   A mask blank according to claim 6, wherein the resist film is laser-drawn to form a resist pattern, and the mask pattern is formed using the resist pattern as a mask. A photomask for manufacturing an FPD device. A method for designing a mask blank for manufacturing an FPD device, which has at least a light-shielding film on a light-transmitting substrate and forms a resist film for laser drawing on the light-shielding film with a slit coater,
The light-shielding film is designed so that the fluctuation range of the film surface reflectance is in a range of less than 2% in a wavelength band ranging from 350 nm to 450 nm including the laser drawing wavelength.
The light-shielding film is such that the reflectance curve of the light-shielding film has a downward convex curve in the wavelength band, and the minimum reflectance that minimizes the film surface reflectance is in the range of the wavelength band. Design and
The light-shielding film has a lower layer portion having a light shielding function and a chromium oxynitride upper layer portion having an antireflection function,
The resist film, while discharging the resist solution from the nozzle with a resist solution supply port extending in one direction, a slit coater apparatus Ru by relatively moving the nozzle in a direction crossing the one direction relative to the light-shielding film surface A method of designing a mask blank for manufacturing an FPD device, wherein the mask blank is formed .   The said light-shielding film is comprised from the crystallinity control layer which controls the crystallinity of an upper layer film | membrane at least, the lower layer part which has a light-shielding function, and the upper layer part which has an antireflection function, It is characterized by the above-mentioned. A method for designing a mask blank for manufacturing an FPD device. 12. The method of designing a mask blank for manufacturing an FPD device according to claim 11, wherein the crystallinity control layer is a chromium nitride film.   The method for designing a mask blank for manufacturing an FPD device according to claim 10, wherein the resist film formed on the light-shielding film is designed to have a thickness selected from 1200 nm or less.

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