TW201921091A - Photomask and method of manufacturing a display device - Google Patents
Photomask and method of manufacturing a display device Download PDFInfo
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- TW201921091A TW201921091A TW108100864A TW108100864A TW201921091A TW 201921091 A TW201921091 A TW 201921091A TW 108100864 A TW108100864 A TW 108100864A TW 108100864 A TW108100864 A TW 108100864A TW 201921091 A TW201921091 A TW 201921091A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000012546 transfer Methods 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000002834 transmittance Methods 0.000 claims abstract description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 153
- 230000000052 comparative effect Effects 0.000 description 26
- 230000010363 phase shift Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 238000013041 optical simulation Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- -1 oxynitrides Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229940105963 yttrium fluoride Drugs 0.000 description 1
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Abstract
Description
本發明係關於一種有利地用於液晶或有機EL(Electro Luminescence，電致發光)所代表之顯示裝置之製造的光罩基底、光罩及其製造方法、以及使用其之顯示裝置之製造方法。The present invention relates to a reticle substrate, a reticle, a method of manufacturing the same, and a method of manufacturing a display device using the same, which are advantageously used for the manufacture of a display device represented by liquid crystal or organic EL (Electro Luminescence).
於專利文獻1中，作為半導體裝置之製造中所使用之光罩，記載有與主透光部(孔圖案)之各邊平行地配置有4個輔助透光部、並使主透光部與輔助透光部之光之相位反轉的相位偏移光罩。
於專利文獻2中記載有具有透明基板、及形成於上述透明基板上之半透明之相位偏移膜之大型相位偏移光罩。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開平3-15845號公報
[專利文獻2]日本專利特開2013-148892號公報In the photomask used in the manufacture of a semiconductor device, it is described that four auxiliary light transmitting portions are arranged in parallel with each side of the main light transmitting portion (hole pattern), and the main light transmitting portion is disposed. A phase shifting mask that reverses the phase of the light of the auxiliary light transmitting portion.
Patent Document 2 describes a large phase shift mask having a transparent substrate and a translucent phase shift film formed on the transparent substrate.
[Previous Technical Literature]
[Patent Literature]
[Patent Document 1] Japanese Patent Laid-Open No. Hei 3-15845
[Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-148892
[發明所欲解決之問題]
現在，於包含液晶顯示裝置或EL顯示裝置等之顯示裝置中，期待更明亮且省電並且高精細、高速顯示、寬視角等顯示性能之提高。
例如，以上述顯示裝置所使用之薄膜電晶體(Thin Film Transistor，「TFT」)來說，若構成TFT之複數個圖案中之形成於層間絕緣膜之接觸孔並不具有確實地使上層及下層之圖案連接之作用，則無法保證正確之動作。另一方面，為了儘量增大顯示裝置之開口率而製成明亮且省電之顯示裝置，要求接觸孔之直徑充分小。隨之，用以形成此種接觸孔之光罩所具備之孔圖案之直徑亦被期待微細化(例如未達3 μm)。例如，認為需要直徑為2.5 μm以下，進而直徑為2.0 μm以下之孔圖案，且在不久的將來，亦期待形成具有小於2.0 μm之1.5 μm以下之直徑之圖案。根據此種背景，需要可確實地轉印微小之接觸孔之顯示裝置之製造技術。
此外，於與顯示裝置相比積體度較高且圖案之微細化顯著進步之半導體裝置(LSI)製造用光罩之領域，存在為了獲得高解析性而對曝光裝置應用高NA(Numerical Aperture：數值孔徑)(例如0.2以上)之光學系統以促進曝光光之短波長化之經過，且大量使用KrF(氟化氪)或ArF(氟化氬)之準分子雷射(分別為248 nm、193 nm之單一波長)。
另一方面，於顯示裝置製造用之光微影領域，為了提高解析性，通常並非使用如上述之方法。反而，藉由使用已知為LCD用等之曝光裝置之NA為0.08～0.10左右，且曝光光源亦包含i線、h線、g線之寬波長域，而有相較於解析性或焦點深度反而更重視生產效率、成本之傾向。
然而，如上所述，即便於顯示裝置製造中，圖案之微細化要求亦上升至先前從未有過之高度。此處，將半導體裝置製造用之技術直接應用於顯示裝置製造存在若干問題。例如，向具有高NA(數值孔徑)之高解析度之曝光裝置之轉換需要較大之投資，而無法獲得與顯示裝置之價格之匹配性。或者，關於曝光波長之變更(以單一波長之形式使用如ArF準分子雷射之短波長)，應用於具有大面積之顯示裝置本身較為困難，並且若假設應用，則除生產效率會降低以外，於仍然需要相當之投資之方面亦不適合。
進而，如下所述，顯示裝置用之光罩存在與半導體裝置製造用之光罩不同的製造上之限制或特有之各種問題。
根據上述情況，將文獻1之光罩直接轉用於顯示裝置製造用就實際情況而言較為困難。又，雖有文獻2所記載之半色調型相位偏移光罩相較於二元光罩光強度分佈有所提高之記載，但有進一步性能提高之餘地。
因此，於使用顯示裝置製造用光罩之顯示裝置之製造方法中，期待克服上述問題，即便為微細之圖案亦可穩定地進行向被轉印體上之轉印。因此，本發明之目的在於獲得一種有利地適合顯示裝置製造用光罩之曝光環境，且可穩定地轉印微細之圖案之優異之光罩及其製造方法。
[解決問題之技術手段]
本發明為了解決上述問題而具有以下之構成。本發明係將下述之構成1～9作為特徵之光罩、將下述之構成10作為特徵之光罩之製造方法、將下述之構成11作為特徵之顯示裝置之製造方法、以及將下述之構成12及13作為特徵之顯示裝置製造用光罩基底。
(構成1)
本發明之構成1係一種光罩，其特徵在於：其係具備成膜於透明基板上之藉由使半透光膜及低透光膜分別圖案化而形成之轉印用圖案之光罩，且上述半透光膜使處於i線～g線之波長範圍之代表波長之光偏移大約180度，並且對於上述代表波長具有透過率T1(%)，上述低透光膜對於上述代表波長之光具有低於上述半透光膜之透過率T1(%)之透過率T2(%)，上述轉印用圖案具有：直徑W1(μm)之主圖案，其包含使上述透明基板露出之透光部；寬度d(μm)之輔助圖案，其配置於上述主圖案之附近，且包含於上述透明基板上形成有上述半透光膜之半透光部；及低透光部，其配置於上述轉印用圖案之除形成有上述主圖案及上述輔助圖案以外之區域，且於上述透明基板上形成有至少上述低透光膜；且上述轉印用圖案滿足下述之式(1)及(2)：
0.8≦W1≦4.0 ・・・(1)
0.5≦×d≦1.5 ・・・(2) 。
(構成2)
本發明之構成2係如構成1之光罩，其特徵在於：上述輔助圖案之上述寬度d滿足d≦W1。
(構成3)
本發明之構成3係如構成1或2之光罩，其特徵在於：上述轉印用圖案中之上述主圖案之上述直徑W1為4.0(μm)以下，並且與上述主圖案對應地於被轉印體上形成直徑W2(μm)(其中W1＞W2)之孔圖案。
(構成4)
本發明之構成4係如構成1至3中任一項之光罩，其特徵在於：上述轉印用圖案中之上述主圖案之上述直徑W1為4.0(μm)以下，並且與上述主圖案對應地於被轉印體上形成直徑W2為3.0(μm)以下(其中W1＞W2)之孔圖案。
(構成5)
本發明之構成5係如構成3或4之光罩，其特徵在於：於將上述主圖案之上述直徑W1與上述被轉印體上之上述直徑W2之差W1－W2設為偏差β(μm)時，0.2≦β≦1.0。
(構成6)
本發明之構成6係如構成1至5中任一項之光罩，其特徵在於：上述低透光膜之對上述代表波長之光之上述透過率T2(%)滿足T2＜30。
(構成7)
本發明之構成7係如構成1至6中任一項之光罩，其特徵在於：上述低透光膜係實質上不會使上述代表波長之光透過者。
(構成8)
本發明之構成8係如構成1至7中任一項之光罩，其特徵在於：上述透光部係使上述透明基板露出，上述半透光部係於上述透明基板上形成有上述半透光膜，上述低透光部係於上述透明基板上積層有上述半透光膜與上述低透光膜。
(構成9)
本發明之構成9係如構成1至8中任一項之光罩，其特徵在於：上述半透光膜包含如下：包含鋯(Zr)、鈮(Nb)、鉿(Hf)、鉭(Ta)、鉬(Mo)、鈦(Ti)之任一者與矽(Si)之材料、或包含該等材料之氧化物、氮化物、氮氧化物、碳化物、或碳氮氧化物之材料。
(構成10)
本發明之構成10係一種光罩之製造方法，其特徵在於：該光罩具備形成於透明基板上且用以於被轉印體上形成孤立孔圖案之上述轉印用圖案，且該光罩之製造方法包括：準備於上述透明基板上積層有半透光膜及低透光膜，進而形成有第1光阻劑膜之光罩基底之步驟；對上述第1光阻劑膜，進行基於特定之上述轉印用圖案之第1繪圖並顯影，藉此形成第1光阻圖案之步驟；將上述第1光阻圖案作為掩膜對上述低透光膜進行濕式蝕刻，形成低透光膜圖案之步驟；去除上述第1光阻圖案，於包含上述低透光膜圖案之整個面形成第2光阻劑膜之步驟；對上述第2光阻劑膜進行第2繪圖並顯影，藉此形成第2光阻圖案之步驟；及將上述第2光阻圖案與上述低透光膜圖案作為掩膜對上述半透光膜進行濕式蝕刻之步驟；上述半透光膜使處於i線～g線之波長範圍之代表波長之光偏移大約180度，並且對於上述代表波長具有透過率T1(%)，上述低透光膜對上述代表波長之光具有低於上述半透光膜之透過率T1(%)之透過率T2(%)，上述轉印用圖案具有：直徑W1(μm)之主圖案，其包含使上述透明基板露出之透光部；寬度d(μm)之輔助圖案，其配置於上述主圖案之附近，且包含於上述透明基板上形成有上述半透光膜之半透光部；及低透光部，其配置於上述轉印用圖案之除形成有上述主圖案及上述輔助圖案以外之區域，且於上述透明基板上形成有至少上述低透光膜；且上述轉印用圖案滿足下述之式(1)及(2)：
0.8≦W1≦4.0 ・・・(1)
0.5≦×d≦1.5 ・・・(2) 。
(構成11)
本發明之構成11係一種顯示裝置之製造方法，其包括：準備如構成1至9中任一項之光罩之步驟；及使用數值孔徑(NA)為0.08～0.20且具有包含i線、h線、g線之曝光光源之曝光裝置對上述轉印用圖案進行曝光，而於被轉印體上形成直徑W2為0.6～3.0(μm)之孔圖案之步驟。
(構成12)
本發明之構成12係一種顯示裝置製造用光罩基底，其特徵在於：其於上述透明基板上積層有如下：對處於i線～g線之波長範圍之代表波長之透過率T1為30～80(%)之半透光膜、及對上述代表波長之透過率小於上述半透光膜之低透光膜；且上述半透光膜設為對於上述代表波長之折射率為1.5～2.9，且具有大約180度之相位偏移量般之膜厚，上述低透光膜係實質上不會使上述代表波長之光透過或具有未達30%之透過率與大約180度之相位偏移量者。
(構成13)
本發明之構成13係如構成12之顯示裝置製造用光罩基底，其中上述半透光膜包含如下：包含包括鋯(Zr)、鈮(Nb)、鉿(Hf)、鉭(Ta)、鉬(Mo)、鈦(Ti)之過渡金屬與矽(Si)之材料、或包含其氧化物、氮化物、氮氧化物、碳化物、或碳氮氧化物之材料。
[發明之效果]
根據本發明，可提供一種有利地適合顯示裝置製造用光罩之曝光環境且可穩定地轉印微細之圖案之優異之光罩及其製造方法。[The problem that the invention wants to solve]
Now, in a display device including a liquid crystal display device or an EL display device, improvement in display performance such as brighter and more power-saving, high-definition, high-speed display, and wide viewing angle is expected.
For example, in the case of a thin film transistor ("TFT") used in the above display device, the contact holes formed in the interlayer insulating film among the plurality of patterns constituting the TFT do not have the upper layer and the lower layer reliably. The function of the pattern connection does not guarantee the correct action. On the other hand, in order to make the aperture ratio of the display device as large as possible, a bright and power-saving display device is required, and the diameter of the contact hole is required to be sufficiently small. Accordingly, the diameter of the hole pattern provided in the photomask for forming such a contact hole is also expected to be fine (for example, less than 3 μm). For example, it is considered that a hole pattern having a diameter of 2.5 μm or less and a diameter of 2.0 μm or less is required, and in the near future, a pattern having a diameter of 1.5 μm or less of less than 2.0 μm is also expected to be formed. According to this background, there is a need for a manufacturing technique of a display device that can reliably transfer minute contact holes.
In addition, in the field of semiconductor device (LSI) manufacturing photomasks which have a higher degree of integration and a refinement of the pattern than the display device, there is a high NA (Numerical Aperture) applied to the exposure device in order to obtain high resolution. An optical system of numerical aperture) (for example, 0.2 or more) to promote the short wavelength of exposure light, and a large amount of excimer lasers of KrF (yttrium fluoride) or ArF (argon fluoride) (248 nm, 193, respectively) a single wavelength of nm).
On the other hand, in the field of photolithography for manufacturing a display device, in order to improve the resolution, the method as described above is generally not used. On the contrary, the NA of an exposure device known as an LCD or the like is about 0.08 to 0.10, and the exposure light source also includes a wide wavelength range of the i line, the h line, and the g line, and has an analytic or depth of focus. Instead, it pays more attention to the tendency of production efficiency and cost.
However, as described above, even in the manufacture of a display device, the miniaturization of the pattern has risen to a height never before. Here, there are several problems in directly applying the technology for manufacturing a semiconductor device to the display device. For example, the conversion to an exposure apparatus having a high resolution of high NA (numerical aperture) requires a large investment, and the matching with the price of the display device cannot be obtained. Alternatively, regarding the change in the exposure wavelength (using a short wavelength such as an ArF excimer laser in the form of a single wavelength), it is difficult to apply to a display device having a large area itself, and if the application is assumed, in addition to the reduction in production efficiency, It is also not suitable for the need for considerable investment.
Further, as described below, the photomask for a display device has various manufacturing limitations or unique problems different from those of the photomask for manufacturing a semiconductor device.
In view of the above, it is difficult to actually use the reticle of Document 1 for the manufacture of a display device. Further, although the halftone phase shift mask described in Document 2 has been described as being improved in light intensity distribution of the binary mask, there is room for further performance improvement.
Therefore, in the method of manufacturing a display device using a photomask for manufacturing a display device, it is expected to overcome the above problem, and it is possible to stably perform transfer onto a transfer target even in a fine pattern. Accordingly, an object of the present invention is to provide an excellent photomask which is advantageously suitable for an exposure environment of a photomask for manufacturing a display device, and which can stably transfer a fine pattern, and a method of manufacturing the same.
[Technical means to solve the problem]
The present invention has the following constitution in order to solve the above problems. The present invention is a photomask having the following features 1 to 9 as a feature, a method of manufacturing a photomask having the following configuration 10, a method of manufacturing a display device characterized by the following configuration 11, and The reticle base for manufacturing a display device having the features 12 and 13 is described.
(Composition 1)
The configuration 1 of the present invention is characterized in that the photomask includes a photomask formed on a transparent substrate and patterned by patterning the semi-transmissive film and the low-transparent film, respectively. And the semi-transmissive film shifts the light of the representative wavelength in the wavelength range of the i-th to g-line by about 180 degrees, and has a transmittance T1 (%) for the representative wavelength, and the low-transparent film is for the representative wavelength. The light has a transmittance T2 (%) lower than a transmittance T1 (%) of the semi-transmissive film, and the transfer pattern has a main pattern of a diameter W1 (μm) including light transmission for exposing the transparent substrate. An auxiliary pattern having a width d (μm) disposed in the vicinity of the main pattern, and including a semi-transmissive portion in which the semi-transmissive film is formed on the transparent substrate; and a low-transmission portion disposed in the above a region other than the main pattern and the auxiliary pattern is formed in the transfer pattern, and at least the low light transmissive film is formed on the transparent substrate; and the transfer pattern satisfies the following formulas (1) and ( 2):
0.8≦W1≦4.0 ・・・(1)
0.5≦ ×d≦1.5 ・・・(2) .
(constituent 2)
The configuration 2 of the present invention is the photomask according to the first aspect, wherein the width d of the auxiliary pattern satisfies d≦W1.
(constitution 3)
According to a third aspect of the present invention, in the photomask of the first or second aspect, the diameter W1 of the main pattern in the transfer pattern is 4.0 (μm) or less, and is rotated in accordance with the main pattern. A hole pattern of a diameter W2 (μm) (where W1 > W2) is formed on the print.
(construction 4)
In the photomask according to any one of the first to third aspects, the diameter W1 of the main pattern in the transfer pattern is 4.0 (μm) or less, and corresponds to the main pattern. A hole pattern having a diameter W2 of 3.0 (μm) or less (where W1 > W2) is formed on the transfer target.
(Constituent 5)
The configuration 5 of the present invention is the photomask according to the third or fourth aspect, wherein the difference W1 - W2 between the diameter W1 of the main pattern and the diameter W2 on the transfer target is set to be a deviation β (μm). When, 0.2 ≦ β ≦ 1.0.
(constituent 6)
The photomask according to any one of the first to fifth aspects of the present invention, characterized in that the light transmittance T2 (%) of the light having the representative wavelength of the low light transmission film satisfies T2 < 30.
(constituent 7)
According to a seventh aspect of the invention, in the photomask of any one of the first to sixth aspect, the low light transmission film does not substantially transmit the light of the representative wavelength.
(Composition 8)
The photomask according to any one of the first to seventh aspects, wherein the transparent portion exposes the transparent substrate, and the semi-transmissive portion is formed on the transparent substrate. In the light film, the semi-transmissive film and the low light-transmissive film are laminated on the transparent substrate.
(constituent 9)
The ninth aspect of the invention is the photomask according to any one of the first to eighth aspect, wherein the semi-transmissive film comprises zirconium (Zr), niobium (Nb), hafnium (Hf), and tantalum (Ta). Any material of either molybdenum (Mo) or titanium (Ti) and bismuth (Si), or materials containing oxides, nitrides, oxynitrides, carbides, or oxycarbonitrides of such materials.
(construction 10)
The present invention provides a photomask according to the present invention, wherein the photomask includes the transfer pattern formed on the transparent substrate and formed with an isolated hole pattern on the transfer target, and the photomask The manufacturing method includes the steps of: forming a semi-transmissive film and a low-transparent film on the transparent substrate, and further forming a photomask base of the first photoresist film; and performing the first photoresist film based on the first photoresist film Specifically, the first pattern of the transfer pattern is developed and developed to form a first photoresist pattern; and the low-light-transmissive film is wet-etched by using the first photoresist pattern as a mask to form low light transmission a step of removing the first photoresist pattern to form a second photoresist film on the entire surface including the low light transmission film pattern; and performing second drawing on the second photoresist film and developing the film a step of forming a second photoresist pattern; and a step of wet etching the semi-transmissive film using the second photoresist pattern and the low light-transmissive film pattern as a mask; the semi-transmissive film is placed on the i-line Optical shift of the representative wavelength in the wavelength range of the ~g line And having a transmittance T1 (%) for the above-mentioned representative wavelength, the low light-transmissive film having a transmittance T2 (%) lower than the transmittance T1 (%) of the semi-transmissive film for the light of the representative wavelength. The transfer pattern has a main pattern having a diameter W1 (μm), a light-transmitting portion exposing the transparent substrate, and an auxiliary pattern having a width d (μm) disposed in the vicinity of the main pattern and included in a semi-transmissive portion of the semi-transmissive film formed on the transparent substrate; and a low-transmission portion disposed in a region other than the main pattern and the auxiliary pattern formed on the transfer pattern, and transparent At least the low light transmissive film is formed on the substrate; and the transfer pattern satisfies the following formulas (1) and (2):
0.8≦W1≦4.0 ・・・(1)
0.5≦ ×d≦1.5 ・・・(2) .
(Structure 11)
The constitution 11 of the present invention is a method of manufacturing a display device, comprising: preparing a photomask according to any one of 1 to 9; and using a numerical aperture (NA) of 0.08 to 0.20 and having an i-line, h The exposure apparatus of the exposure light source of the line and the g-line exposes the transfer pattern to form a hole pattern having a diameter W2 of 0.6 to 3.0 (μm) on the transfer target.
(construction 12)
The structure 12 of the present invention is a photomask substrate for manufacturing a display device, characterized in that the transparent substrate is laminated with a transmittance T1 of 30 to 80 for a representative wavelength in a wavelength range from i to g lines. a semi-transmissive film of (%) and a low light transmissive film having a transmittance for the representative wavelength smaller than the semi-transmissive film; and the semi-transmissive film has a refractive index of 1.5 to 2.9 for the representative wavelength, and Having a film thickness of about 180 degrees, the low light transmissive film does not substantially transmit the above-mentioned representative wavelength light or has a transmittance of less than 30% and a phase shift of about 180 degrees. .
(construction 13)
The structure 13 of the present invention is the photomask substrate for manufacturing a display device of the composition 12, wherein the semi-transmissive film comprises the following: comprising zirconium (Zr), niobium (Nb), hafnium (Hf), tantalum (Ta), molybdenum. (Mo), a material of a transition metal of titanium (Ti) and bismuth (Si), or a material containing an oxide, a nitride, an oxynitride, a carbide, or a oxycarbonitride.
[Effects of the Invention]
According to the present invention, it is possible to provide an excellent reticle which is advantageously suitable for an exposure environment of a reticle for manufacturing a display device and which can stably transfer a fine pattern, and a method of manufacturing the same.
若光罩所具有之轉印用圖案之CD(Critical Dimension(臨界尺寸)，以下係以圖案線寬之意義使用)微細化，則將其正確地轉印至被轉印體(亦稱為欲進行蝕刻加工之薄膜等、被加工體)之步驟之實施變得更加困難。於顯示裝置用之曝光裝置中以規格之形式而表示之解析極限於大多之情形時為2～3 μm左右。相對於此，於欲形成之轉印用圖案中已經出現接近上述尺寸或小於上述尺寸之尺寸者。進而，顯示裝置製造用光罩與半導體裝置製造用光罩相比面積較大，故而於實際生產上，面內均勻地轉印具有未達3 μm之CD之轉印用圖案存在較大的困難。
因此，需要努力研究除純粹之解析度(基於曝光波長、曝光光學系之數值孔徑)以外之要素，藉此發揮出實效性之轉印性能。
進而，由於被轉印體(平板顯示器基板)之面積較大，故而亦可謂於藉由曝光而進行之圖案轉印之步驟中，容易產生因被轉印體之表面平坦度而引起之散焦之環境。於此環境下，充分地確保曝光時之焦點之裕度(DOF：Depth of Focus，焦點深度)極其有意義。
再者，眾所周知，顯示裝置製造用之光罩之尺寸較大，於光罩製造步驟中之濕式處理(顯影或濕式蝕刻)中，於面內之所有位置確保CD之均勻性並不容易。為了將最終之CD精度控制在所規定之容許範圍內，確保曝光步驟中之充分之焦點深度(DOF)亦為關鍵，又，亦期待其他性能不會隨之劣化。
本發明係一種具備成膜於透明基板上之藉由使半透光膜及低透光膜分別圖案化而形成之轉印用圖案之光罩。於圖1中例示本發明之光罩所具有之轉印用圖案。圖1(a)係俯視模式圖，圖1(b)係剖視模式圖。
如圖1(a)所示，形成於透明基板上之轉印用圖案包含主圖案及配置於主圖案之附近之輔助圖案。
於本態樣中，主圖案包含使透明基板露出之透光部，輔助圖案包含於透明基板上形成有半透光膜之半透光部。又，包圍主圖案及輔助圖案之部分成為於透明基板上形成有至少低透光膜之低透光部。即，於圖1所示之轉印用圖案中，形成有主圖案及輔助圖案之區域以外之區域成為低透光部。如圖1(b)所示，於本態樣中，低透光部係半透光膜與低透光膜積層於透明基板上。半透光膜具有使處於i線～g線之波長範圍之代表波長之光偏移大約180度之相位偏移量，且對於代表波長具有透過率T1(%)。
本發明之光罩之低透光膜可設為對於曝光光之代表波長具有特定之低透過率者。本發明之光罩之製造所使用之低透光膜對於處於i線～g線之波長範圍之代表波長之光，可具有低於半透光膜之透過率T1(%)之透過率T2(%)。
此處，於將主圖案之直徑(W1)設為4 μm以下時，可與該主圖案對應地於被轉印體上形成具有直徑W2(μm)(其中W1＞W2)之微細之主圖案(孔圖案)。
具體而言，較佳為以成為下述式(1)
0.8≦W1≦4.0 ・・・(1)
之關係之方式設定W1(μm)。此時，形成於被轉印體上之主圖案(孔圖案)之直徑W2(μm)可設為
0.6≦W2≦3.0 。
又，本發明之光罩能以形成對顯示裝置製造有用之微細尺寸之圖案之目的而使用。例如，於主圖案之直徑W1為3.0(μm)以下時，可更顯著地獲得本發明之效果。可將主圖案之直徑W1(μm)較佳地設為
1.0≦W1≦3.0 。
再者，亦可將直徑W1與直徑W2之關係設為W1＝W2，但較佳為設為W1＞W2。即，於在將β(μm)設為偏差值時且
β＝W1－W2＞0(μm)
時，可設為
0.2≦β≦1.0，
可更佳地設為
0.2≦β≦0.8 。
於如上述般進行設定時，如下所述，可獲得減少被轉印體上之光阻圖案之損失等有利之效果。
於上述說明中，主圖案之直徑W1意指圓之直徑、或近似於圓之直徑之數值。例如，於主圖案之形狀為正多邊形時，主圖案之直徑W1設為內切圓之直徑。如圖1所示，若主圖案之形狀為正方形，則主圖案之直徑W1為一邊之長度。於被轉印之主圖案之直徑W2亦設為圓之直徑或近似於圓之直徑之數值之方面相同。
當然，於欲形成更微細化之圖案時，亦可將W1設為2.5(μm)以下或2.0(μm)以下，進而，亦可將W1設為1.5(μm)以下而應用本發明。
對於具有此種轉印用圖案之本發明之光罩之曝光所使用之曝光光之代表波長，主圖案與輔助圖案之相位差大約為180度。即，透過主圖案之上述代表波長之光與透過輔助圖案之上述代表波長之相位差1成為大約180度。所謂大約180度，意指120～240度。相位差1較佳為150～210度。
再者，本發明之光罩於使用包含i線、h線、或g線之曝光光時效果顯著，尤佳為將包含i線、h線、及g線之寬波長光用作曝光光。於此情形時，可設定i線、h線、g線之任一者作為代表波長。例如可將h線作為代表波長而構成本發明之光罩。
為了形成此種相位差，只要將主圖案設為使透明基板主表面露出之透光部，將輔助圖案設為於透明基板上形成有半透光膜之半透光部，並將該半透光膜之對上述代表波長之相位偏移量設為大約180度即可。
半透光部所具有之光透過率T1可以如下方式進行設定。即，於形成於半透光部之半透光膜之對上述代表波長之透過率為T1(%)時，設為
30≦T1≦80 。
更佳為
40≦T1≦75 。
再者，透過率T1(%)設為以透明基板之透過率為基準時之上述代表波長之透過率。
於本發明之光罩中，配置於形成有主圖案及輔助圖案之區域以外之區域，且以包圍主圖案及輔助圖案之方式而形成之低透光部可設為如以下之構成。
低透光部係實質上不會使曝光光(處於i線～g線之波長範圍之代表波長之光)透過之低透光膜(即遮光膜)，且低透光部可設為將光學濃度OD≧2(較佳為OD≧3，更佳為OD≧5)之膜形成於透明基板上而成者。
或，低透光部亦可設為形成有於特定範圍內使曝光光透過之低透光膜者。但是，於在特定範圍內使曝光光透過之情形時且低透光部之透過率T3(%)(此處，於半透光膜與低透光膜積層之情形時，作為其積層之透過率)滿足
0＜T3＜T1 。
較佳為滿足
0＜T3≦20 。
透過率T3(%)設為將透明基板之透過率作為基準時之上述代表波長之透過率。
又，於如上述般低透光膜以特定之透過率使曝光光透過之情形時，低透光部之透過光與透光部之透過光之相位差3較佳為設為90度以下，更佳為60度以下。所謂「90度以下」，若以弧度表述，則意指上述相位差為「(2n－1/2)π～(2n＋1/2)π(此處，n為整數)」。與上述同樣地，以對曝光光所含之代表波長之相位差之形式進行計算。
又，作為本發明之光罩所使用之低透光膜之單獨之性質，較佳為實質上不會使上述代表波長之光透過、或具有未達30(%)之透過率(T2(%))(即0＜T2＜30)且相位偏移量(2)為大約180度。所謂大約180度，意指120～240度。相位差1較佳為150～210度。
此處之透過率與上述同樣，亦設為將透明基板之透過率作為基準時之上述代表波長之透過率。
於上述轉印用圖案中，於在將輔助圖案之寬度設為d(μm)時且於輔助圖案之寬度d與該部分之光透過率T1之間
0.5≦×d≦1.5 ・・・(2)
成立時，可獲得發明之優異之效果。此處，×d係表示透過輔助圖案之光之量的因子(以下，簡稱為因子)。式(2)表示上述因子之較佳之範圍，若上述因子大於1.5，則如圖5(b)所示，光阻之狹縫(slit)部中之厚度之損失增大而超過容許範圍，若上述因子小於0.5，則無法獲得充分之解析度。此時，將主圖案之中心與輔助圖案之寬度方向之中心之距離設為間距P(μm)，關於間距P，較佳為
1.0＜P≦5.0
之關係成立。
間距P可更佳地設為
1.5＜P≦4.5 。
於本發明中，輔助圖案具有給在設計上孤立之主圖案帶來如假性密集圖案(Dense Pattern)之光學作用的效果，但於滿足上述之關係式時，透過主圖案與輔助圖案之曝光光彼此可發揮良好之相互作用，而顯示出下述之實施例所示之優異之轉印性。
作為輔助圖案之寬度d(μm)，於本發明之光罩所應用之曝光條件(所使用之曝光裝置)中，為解析極限以下之尺寸(例如d≦3.0，較佳為d≦2.5)，作為具體之例，為
d≧0.7
更佳為
d≧0.8 。
又，較佳為d≦W1，更佳為d＜W1。
又，上述(2)之關係式更佳為下述之式(2)-1，進而較佳為下述之式(2)-2。
0.7≦×d≦1.2 ・・・(2)-1
0.75≦×d≦1.0 ・・・(2)-2
如上所述，圖1所示之光罩之主圖案為正方形，但本發明並不限定於此。例如，如圖2所例示般，光罩之主圖案可為包含八邊形或圓之旋轉對稱之形狀。而且可將旋轉對稱之中心設為成為上述P之基準之中心。
又，圖1所示之光罩之輔助圖案之形狀為八邊形帶，但本發明並不限定於此。輔助圖案之形狀較佳為對相對於孔圖案之中心對稱3次以上之旋轉對象之形狀賦予一定之寬度者。較佳之主圖案及輔助圖案之形狀係圖2(a)～(f)所例示之形狀，且主圖案之設計與輔助圖案之設計亦可將圖2(a)～(f)之不同者相互組合。
例如，例示了輔助圖案之外周為正方形、正六邊形、正八邊形、正十邊形等正多邊形(較佳為正2n邊形，此處之n為2以上之整數)或圓形之情形。而且，作為輔助圖案之形狀，較佳為輔助圖案之外周與內周幾乎平行之形狀，即如具有幾乎固定之寬度之正多邊形或圓形之帶之形狀。亦將該帶狀之形狀稱為多邊形帶或圓形帶。作為輔助圖案之形狀，此種正多邊形帶或圓形帶較佳為包圍主圖案之周圍之形狀。此時，可使主圖案之透過光與輔助圖案之透過光之光量之平衡幾乎相等，因此容易獲得用以獲得本發明之作用效果之光之相互作用。
尤其是於將本發明之光罩用作顯示裝置製造用之光罩之情形時，即，將本發明之光罩與顯示裝置製造用之光阻組合使用之情形時，可減少於被轉印體上與輔助圖案對應之部分之光阻損失。
或者，輔助圖案之形狀亦可為未完全包圍主圖案之周圍而上述多邊形帶或圓形帶之一部分缺漏之形狀。如圖2(f)所示，輔助圖案之形狀例如亦可為四邊形帶之角部缺漏之形狀。
再者，只要不妨礙本發明之效果，則除本發明之主圖案、輔助圖案以外，亦可附加使用其他圖案。
以下參照圖3對本發明之光罩之製造方法之一例進行說明。
如圖3(a)所示，準備光罩基底。
該光罩基底係於包含玻璃等之透明基板上依序形成有半透光膜與低透光膜，進而塗佈有第1光阻劑膜。
半透光膜係如於將i線、h線、g線之任一者設為代表波長時，於透明基板之主表面上該代表波長之透過率為30～80(%)(於將T1(%)設為透過率時，30≦T1≦80)，更佳為40～75(%)，且對該代表波長之相位偏移量為大約180度之膜。藉由此種半透光膜，可使包含透光部之主圖案與包含半透光部之輔助圖案之間之透過光相位差為大約180度。此種半透光膜使處於i線～g線之波長範圍之代表波長之光之相位偏移大約180度。作為半透光膜之成膜方法，可應用濺鍍法等公知之方法。
半透光膜較理想為滿足上述之透過率與相位差，且如以下所述般包含可進行濕式蝕刻之材料。但是，若於進行濕式蝕刻時所產生之側蝕之量變得過大，則會產生CD精度之劣化或因底切而引起之上層膜之破壞等故障，故而膜厚之範圍較佳為2000 Å以下。例如，為300～2000 Å之範圍，更佳為300～1800 Å。此處之所謂CD，係指Critical Dimension，於本說明書中以圖案線寬之意義使用。
又，為了滿足該等條件，半透光膜材料較佳為曝光光所含之代表波長(例如h線)之折射率為1.5～2.9。更佳為1.8～2.4。
進而，為了充分地發揮相位偏移效果，藉由濕式蝕刻而形成之圖案剖面(被蝕刻面)較佳為接近與透明基板主表面垂直。
於考慮上述性質時，作為半透光膜之膜材料，可設為包含如下：包含鋯(Zr)、鈮(Nb)、鉿(Hf)、鉭(Ta)、鉬(Mo)、鈦(Ti)之任一者與矽(Si)之材料、或包含該等材料之氧化物、氮化物、氮氧化物、碳化物、或碳氮氧化物之材料。
於光罩基底之半透光膜上形成有低透光膜。作為成膜方法，與半透光膜之情形同樣地，可應用濺鍍法等公知之方法。
光罩基底之低透光膜可為實質上不會使曝光光透過之遮光膜。或可設為對曝光光之代表波長具有特定之低透過率者。本發明之光罩之製造所使用之低透光膜對處於i線～g線之波長範圍之代表波長之光具有低於半透光膜之透過率T1(%)之透過率T2(%)。
於低透光膜可使曝光光透過之情形時，要求低透光膜對曝光光之透過率及相位偏移量可達成本發明之光罩之低透光部之透過率及相位偏移量。較佳為於低透光膜與上述半透光膜之積層狀態下，對曝光光代表波長之光之透過率T3(%)為T3≦20，進而將相位偏移量3設為90(度)以下，更佳為設為60(度)以下。
作為低透光膜之單獨之性質，較佳為實質上不會使上述代表波長之光透過或具有未達30(%)之透過率(T2(%))(即0＜T2＜30)且相位偏移量(2)為大約180度。所謂大約180度，意指120～240度。相位差1較佳為150～210(度)。
光罩基底之低透光膜之材料既可為鉻(Cr)或其化合物(氧化物、氮化物、碳化物、氮氧化物、或碳氮氧化物)，或亦可為包含鉬(Mo)、鎢(W)、鉭(Ta)、鈦(Ti)之金屬之矽化物或該矽化物之上述化合物。但是，光罩基底之低透光膜之材料較佳為可與半透光膜同樣地進行濕式蝕刻且對半透光膜之材料具有蝕刻選擇性之材料。即，較理想為低透光膜對半透光膜之蝕刻劑具有耐受性，又，低半透光膜對透光膜之蝕刻劑具有耐受性。
於光罩基底之低透光膜上進而塗佈有第1光阻劑膜。本發明之光罩較佳為藉由雷射繪圖裝置而繪圖，因此設為適合雷射繪圖裝置之光阻劑。第1光阻劑膜可為正型或負型，以下作為正型進行說明。
繼而，如圖3(b)所示，使用繪圖裝置對第1光阻劑膜進行根據基於轉印用圖案之繪圖資料而進行之繪圖(第1繪圖)。接下來，將藉由顯影而獲得之第1光阻圖案作為掩膜，對低透光膜進行濕式蝕刻。藉此，劃定成為低透光部之區域，又，劃定由低透光部所包圍之輔助圖案(低透光膜圖案)之區域。用於濕式蝕刻之蝕刻液(濕式蝕刻劑)可使用適合於所使用之低透光膜之組成之公知者。例如，只要為含有鉻(Cr)之膜，則可使用硝酸鈰銨等作為濕式蝕刻劑。
繼而，如圖3(c)所示，將第1光阻圖案剝離。
繼而，如圖3(d)所示，對包含所形成之低透光膜圖案之整個面塗佈第2光阻劑膜。
繼而，如圖3(e)所示，對第2光阻劑膜進行第2繪圖，形成藉由顯影而形成之第2光阻圖案。將該第2光阻圖案與上述低透光膜圖案作為掩膜進行半透光膜之濕式蝕刻。藉由該蝕刻(顯影)而形成包含使透明基板露出之透光部之主圖案之區域。再者，第2光阻圖案較佳為覆蓋成為輔助圖案之區域且於成為包含透光部之主圖案之區域具有開口者，並且以低透光膜之邊緣自該開口露出之方式對第2繪圖之繪圖資料預先進行定型。藉此，可吸收於第1繪圖與第2繪圖之間相互產生之對準偏差，從而可防止轉印用圖案之CD精度之劣化。
即，藉由如上述般進行第2繪圖時之第2光阻圖案之定型，於欲在被轉印體上形成孤立孔圖案時，遮光膜與半透光膜之圖案化不會產生位置偏差，於如圖1所例示之轉印用圖案中，可使主圖案及輔助圖案之重心精準地一致。
半透光膜用之濕式蝕刻劑係根據半透光膜之組成而適當選擇。
繼而，如圖3(f)所示，將第2光阻圖案剝離，完成圖1所示之本發明之光罩。
於在顯示裝置用光罩之製造中使形成於透明基板上之遮光膜等光學膜圖案化時，作為所應用之蝕刻，有乾式蝕刻及濕式蝕刻。可採用任一者，但於本發明中，濕式蝕刻尤其有利。其原因在於，顯示裝置用之光罩之尺寸相對較大，進而存在多種尺寸。於製造此種光罩時，若應用使用真空腔室之乾式蝕刻，則會導致乾式蝕刻裝置較大或製造步驟無效率。
但是，於製造此種光罩時亦存在應用濕式蝕刻所伴有之問題。由於濕式蝕刻具有各向同性蝕刻之性質，故而於欲在深度方向上對特定之膜進行蝕刻並使其溶出時，於相對於深度方向垂直之方向上亦進行蝕刻。例如，於對膜厚F(nm)之半透光膜進行蝕刻而形成狹縫時，成為蝕刻掩膜之光阻圖案之開口較所需之狹縫寬度減小2F(nm)(即，單側F(nm))，但越成為微細寬度之狹縫，越難以維持光阻圖案開口之尺寸精度。因此，將輔助圖案之寬度d設為1 μm以上，較佳為設為1.3 μm以上有用。
又，於上述膜厚F(nm)較大之情形時，側蝕量亦增大，故而使用即便膜厚較小亦具有大約180度之相位偏移量之膜材料有利，該結果，期待半透光膜之折射率對於該波長較高。因此，較佳為使用如對上述代表波長之折射率為1.5～2.9、較佳為1.8～2.4之材料製成半透光膜。
本發明包含包括藉由曝光裝置對上述本發明之光罩進行曝光而將上述轉印用圖案轉印至被轉印體上之步驟的顯示裝置之製造方法。
本發明之顯示裝置之製造方法係首先準備上述之本發明之光罩。繼而，使用數值孔徑(NA)為0.08～0.20且具有包含i線、h線、g線之曝光光源之曝光裝置，對上述轉印用圖案進行曝光，而於被轉印體上形成直徑W2為0.6～3.0 μm之孔圖案。曝光通常係使用等倍曝光且有利。
作為使用本發明之光罩對轉印用圖案進行轉印時所使用之曝光機，可列舉以下所例示之進行等倍之投影曝光之方式的曝光機。即，係用作LCD(Liquid Crystal Display，液晶顯示裝置)用(或者FPD(Flat Panel Display，平板顯示器)用、液晶用)之曝光機，其構成係光學系統之數值孔徑(NA)為0.08～0.15(相干因子(σ)為0.4～0.9)，且具有i線、h線及g線之至少一者包含於曝光光之光源(亦稱為寬波長光源)者。但是，即便於如數值孔徑NA成為0.10～0.20之曝光裝置中，當然亦可應用本發明獲得發明之效果。
又，所使用之曝光裝置之光源亦可使用變形照明(環狀照明等)，即便為非變形照明，亦可獲得發明之優異之效果。
本發明包含用以製造上述之本發明之光罩之光罩基底。具體而言，本發明之光罩基底係於透明基板上積層有半透光膜與低透光膜。亦可進而塗佈光阻劑膜。
半透光膜及低透光膜之物理性質、膜質、及組成係如上所述。
即，本發明之光罩基底之半透光膜係對處於i線～g線之波長範圍之代表波長的透過率T1為30～80(%)。上述半透光膜設為如對於上述代表波長之折射率為1.5～2.9，且具有大約180度之相位偏移量之膜厚。具有此種折射率之半透光膜之膜厚即便充分地薄亦具有所需之相位偏移量，故而可縮短半透光膜之濕式蝕刻時間。該結果，可抑制半透光膜之側蝕。
本發明之光罩基底之低透光膜對於代表波長之透過率小於上述半透光膜。該低透光膜係實質上不會使上述代表波長之光透過者、或具有未達30%之透過率與大約180度之相位偏移量者。
[實施例]
對於圖4所示之3種(比較例1-1及1-2以及實施例1)光罩，藉由光學模擬對其轉印性能進行比較、評價。即，對於將具有用以於被轉印體上形成直徑為2.0 μm之孔圖案之轉印用圖案之3個光罩之曝光條件設定為共用時會顯示怎樣的轉印性能進行光學模擬。
(比較例1-1)
如圖4所示，比較例1-1之光罩具有包含形成於透明基板上之遮光膜圖案之所謂之二元光罩之圖案。於比較例1-1之光罩中，包含使透明基板露出之透光部之主圖案由遮光部包圍。主圖案之直徑W1(正方形之一邊)為2.0(μm)。
(比較例1-2)
如圖4所示，比較例1-2之光罩係具有藉由使曝光光透過率(對h線)為5%且相位偏移量為180度之半透光膜圖案化而形成之、包含一邊(直徑)(即W1)為2.0(μm)之四邊形之透光部之主圖案的半色調型相位偏移光罩。
(實施例1)
如圖4所示，實施例1之光罩具有本發明之轉印用圖案。此處，主圖案設為一邊(直徑)(即W1)為2.0(μm)之正方形，輔助圖案設為寬度d為1.3(μm)之八邊形帶，主圖案中心與輔助圖案之寬度中心之距離即間距P設為4(μm)。
輔助圖案係於透明基板上形成有半透光膜。該半透光膜之曝光光(對h線)透過率T1為70(%)，相位偏移量為180度。又，包圍主圖案及輔助圖案之低透光部包含實質上不會使曝光光透過之遮光膜(OD＞2)。
關於比較例1-1及1-2以及實施例1之光罩之任一者，均設為於被轉印體上形成直徑W2為2.0 μm(W1＝W2。即，形成於被轉印體上之直徑W2與光罩之轉印用圖案所具有之主圖案之直徑W1相同。)之孔圖案者。於模擬中所應用之曝光條件係如下所述。即，曝光光設為包含i線、h線、g線之寬波長，強度比設為g：h：i＝1：0.8：1。
曝光裝置之光學系統係NA為0.1，相干因子σ為0.5。用以獲得形成於被轉印體上之光阻圖案之剖面形狀之正型光阻劑之膜厚設為1.5 μm。
將上述條件下之各轉印用圖案之性能評價示於圖4。又，將形成於被轉印體上之光強度之空間像及藉由該空間像而形成之光阻圖案之剖面形狀示於圖5。
(光罩之光學評價)
例如，為了轉印直徑較小之微細之透光圖案，透過光罩後之曝光光的形成於被轉印體上之空間像、即透過光強度曲線之分佈必須良好。具體而言，形成透過光強度之波峰之傾斜陡峭且上升程度接近垂直、及波峰之光強度之絕對值較高(於在周圍形成有副波峰之情形時，相對於副波峰之強度相對充分地高)等為關鍵。
於根據光學性能相對定量性地評價光罩時，可使用以下之指標。
(1)焦點深度(DOF)
其係用以相對於目標CD成為±10%以之範圍內的焦點深度之大小。若DOF之數值較高，則不易受到被轉印體(例如顯示裝置用之面板基板)之平坦度之影響，可確實地形成微細之圖案，從而可抑制其CD偏差。
(2)MEEF(Mask Error Enhancement Factor，光罩誤差增強因子)
其係表示Mask CD(Mask Critical Dimension，光罩臨界尺寸)誤差與形成於被轉印體上之圖案之CD誤差之比率的數值，且MEEF越低，越能減少形成於被轉印體上之圖案之CD誤差。
(3)Eop(感光度)
於顯示裝置製造用之光罩中，尤其重要之評價項目有Eop。其係為了將欲獲得之圖案尺寸形成於被轉印體上所必需之曝光光量。於顯示裝置製造中，由於光罩尺寸較大(例如，主表面之一邊為300～1400 mm左右之正方形或長方形)，故而若使用Eop數值較低之光罩，則可提高掃描曝光之速度，從而提高生產效率。
若鑒於以上情況對模擬對象之各樣本之性能進行評價，則如圖4所示，實施例1之光罩於焦點深度(DOF)擴大至55 μm以上等與比較例相比極其優異之方面顯示出圖案之穩定之轉印性。其意味著MEEF之值較小，並且微細之圖案之CD精度亦較高。
進而，實施例1之光罩之Eop之值非常小。該情況表示於實施例1之光罩之情形時，即便是製造大面積之顯示裝置，曝光時間亦不會增大或亦可縮短曝光時間之優點。
又，若參照圖5所示之透過光強度之空間像，則可知於實施例1之光罩之情形時，相對於成為光阻劑感光之閾值之位準(Eth(Exposure Threshold，曝光量閾值))，可增高主圖案部之波峰，亦可使其波峰之傾斜變得充分陡峭(接近與被轉印體之表面垂直)。該情況與比較例1-1及1-2相比具有優勢。此處，藉由將透過輔助圖案之光利用於增強主圖案位置之光強度而達成Eop之增加與MEEF之減少。再者，於實施例1之光罩中，於主圖案之轉印像位置之兩側產生側峰，但由於為Eth以下，故而對主圖案之轉印無影響。
再者，以下對減少源自該側峰之光阻劑殘膜之損失之方法進行說明。
變更形成於光罩之轉印用圖案之設計，使用圖6所示之比較例2-1、比較例2-2及實施例2之樣本進行模擬。此處，於將各樣本之主圖案之直徑W1均設為2.5(μm)之方面與上述樣本(比較例1-1、比較例1-2及實施例1)不同。
(比較例2-1)
如圖6所示，比較例2-1之光罩係包含形成於透明基板上之遮光膜圖案之所謂之二元光罩之圖案。於比較例2-1之光罩中，包含使透明基板露出之透光部之主圖案由遮光部包圍。該主圖案之直徑W1(正方形之一邊)為2.5(μm)。
(比較例2-2)
如圖6所示，比較例2-1之光罩係具有藉由使曝光光透過率(對h線)為5%且相位偏移量為180度之半透光膜圖案化而形成的、包含主圖案之直徑W1(正方形之一邊)為2.5(μm)之四邊形之透光部之主圖案的半色調型相位偏移光罩。
(實施例2)
如圖6所示，實施例2之光罩係本發明之轉印用圖案。實施例2之光罩之主圖案係主圖案之直徑W1(正方形之一邊)為2.5(μm)之正方形，輔助圖案係寬度d為1.3(μm)之八邊形帶，主圖案中心與輔助圖案之寬度中心之距離即間距P設為4(μm)。
設為使用比較例2-1、比較例2-2及實施例2之光罩而於被轉印體上形成直徑為2.0 μm之孔圖案。即，將該等光罩之光罩偏差(β＝W1－W2)設為0.5(μm)。於模擬中所應用之曝光條件與上述之比較例1-1及1-2以及實施例1之光罩之情形相同。
根據圖6所示之資料明確，於使用實施例2之光罩之情形時，顯示出優異之DOF、MEEF，並且顯示出相對於比較例2-1及2-2有利之性能。於實施例2之光罩中，尤其是DOF成為超過35 μm之數值。
又，若參照圖7所示之透過光強度之空間像與被轉印體上之光阻圖案剖面形狀，則實施例2之樣本所具有之優異之特性進一步變得明確。如圖7所示，於使用實施例2之光罩之情形時，與主圖案對應之波峰格外高於形成於兩側之側峰，幾乎不會產生光阻損壞。
根據以上之結果明確，於使用本發明之光罩之圖案轉印之情形時，於光罩偏差β為0.5(μm)左右，具體而言為0.2～1.0(μm)之範圍之轉印用圖案中，可獲得更容易供實際使用之優異之轉印像。
根據以上，確認了本發明之光罩之優異之性能。尤其是若使用本發明之光罩，則於2 μm以下之微細之圖案中，MEEF可獲得2.5以下之數值，這一點於將來之顯示裝置製造中之意義較大。
本發明之光罩之用途並無特別限制。本發明之光罩可較佳地使用於包含液晶顯示裝置或EL顯示裝置等之顯示裝置的製造中。
根據本發明之光罩，可控制透過主圖案與輔助圖案之兩者之曝光光之相互干擾，於曝光時減少零次光而相對增大±1次光之比率。因此，可大幅改善透過光之空間像。
作為有利地獲得此種作用效果之用途，有利的是，為了形成液晶或EL裝置所大量使用之接觸孔等孤立之孔圖案使用本發明之光罩。作為圖案之種類，多數情況下係藉由使多個圖案具有一定之規則性進行排列從而將其等區分地稱為對彼此造成光學影響之密集(Dense)圖案與周圍不存在此種規則性排列之圖案之孤立圖案。於欲在被轉印體上形成孤立圖案時，適宜應用本發明之光罩。
亦可於不妨礙本發明之效果之範圍內對本發明之光罩使用附加性之光學膜或功能膜。例如，亦可設為於防止低透光膜所具有之光透過率對檢查或光罩之位置檢測造成阻礙之不良情況之、除轉印用圖案以外之區域形成有遮光膜的構成。又，於半透光膜中，亦可於其表面設置用以使繪圖光或曝光光之反射減少之防反射層。進而，半透光膜亦可設為於其透明基板側具有用以抑制背面反射之低反射層者。If the CD (Critical Dimension, which is used in the meaning of the line width of the pattern) of the transfer pattern which the photomask has is made fine, it is correctly transferred to the object to be transferred (also called The step of performing the etching process, such as a film or the like, becomes more difficult. In the exposure apparatus for a display device, the analysis limit expressed in the form of a specification is about 2 to 3 μm in many cases. On the other hand, in the transfer pattern to be formed, a size close to the above size or smaller than the above size has appeared. Further, since the mask for manufacturing a display device has a larger area than the photomask for manufacturing a semiconductor device, it is difficult to uniformly transfer a transfer pattern having a CD of less than 3 μm in the surface in actual production. .
Therefore, it is necessary to study the elements other than the pure resolution (based on the exposure wavelength and the numerical aperture of the exposure optical system), thereby exerting an effective transfer performance.
Further, since the area of the transfer target (flat panel display substrate) is large, it is also possible to cause defocusing due to the flatness of the surface of the transfer target in the step of pattern transfer by exposure. The environment. In this environment, it is extremely meaningful to fully ensure the focus margin (DOF: Depth of Focus) during exposure.
Furthermore, it is known that the size of the photomask for manufacturing a display device is large, and in the wet processing (developing or wet etching) in the photomask manufacturing step, it is not easy to ensure the uniformity of the CD at all positions in the plane. . In order to control the final CD accuracy within the specified tolerance range, it is also important to ensure sufficient depth of focus (DOF) in the exposure step, and it is expected that other performance will not deteriorate.
The present invention is a photomask including a transfer pattern formed by patterning a semi-transmissive film and a low-transparent film, which are formed on a transparent substrate. The transfer pattern of the photomask of the present invention is illustrated in Fig. 1 . Fig. 1(a) is a plan view, and Fig. 1(b) is a cross-sectional view.
As shown in FIG. 1(a), the transfer pattern formed on the transparent substrate includes a main pattern and an auxiliary pattern disposed in the vicinity of the main pattern.
In this aspect, the main pattern includes a light transmitting portion that exposes the transparent substrate, and the auxiliary pattern includes a semi-light transmitting portion on which the semi-transmissive film is formed on the transparent substrate. Further, a portion surrounding the main pattern and the auxiliary pattern is a low light transmitting portion in which at least a low light transmissive film is formed on the transparent substrate. In other words, in the transfer pattern shown in FIG. 1, a region other than the region in which the main pattern and the auxiliary pattern are formed becomes a low light transmitting portion. As shown in FIG. 1(b), in this aspect, the low light transmissive portion is a semi-transmissive film and a low light transmissive film is laminated on the transparent substrate. The semi-transmissive film has a phase shift amount that shifts light of a representative wavelength in a wavelength range of i line to g line by about 180 degrees, and has a transmittance T1 (%) for a representative wavelength.
The low light transmissive film of the photomask of the present invention can be set to have a specific low transmittance for a representative wavelength of exposure light. The low light transmissive film used in the manufacture of the photomask of the present invention may have a transmittance T2 lower than the transmittance T1 (%) of the semitransparent film for light of a representative wavelength in the wavelength range of i line to g line ( %).
Here, when the diameter (W1) of the main pattern is 4 μm or less, a fine main pattern having a diameter W2 (μm) (W1>W2) can be formed on the object to be transferred corresponding to the main pattern. (hole pattern).
Specifically, it is preferably such that the following formula (1)
0.8≦W1≦4.0 ・・・(1)
The relationship is set to W1 (μm). At this time, the diameter W2 (μm) of the main pattern (hole pattern) formed on the transfer target body can be set to
0.6≦W2≦3.0.
Further, the photomask of the present invention can be used for the purpose of forming a pattern of fine size useful for the display device. For example, when the diameter W1 of the main pattern is 3.0 (μm) or less, the effects of the present invention can be more significantly obtained. The diameter W1 (μm) of the main pattern can be preferably set to
1.0≦W1≦3.0.
Further, the relationship between the diameter W1 and the diameter W2 may be W1 = W2, but it is preferable to set W1 > W2. That is, when β(μm) is set as the deviation value and β=W1-W2>0 (μm)
Can be set to
0.2≦β≦1.0,
Can be better set
0.2≦β≦0.8.
When setting as described above, as described below, it is possible to obtain an advantageous effect of reducing the loss of the photoresist pattern on the transfer target.
In the above description, the diameter W1 of the main pattern means the diameter of the circle, or a value approximate to the diameter of the circle. For example, when the shape of the main pattern is a regular polygon, the diameter W1 of the main pattern is set to the diameter of the inscribed circle. As shown in FIG. 1, if the shape of the main pattern is a square, the diameter W1 of the main pattern is the length of one side. The diameter W2 of the main pattern to be transferred is also set to be the same as the diameter of the circle or the value of the diameter of the circle.
Of course, when it is desired to form a finer pattern, W1 may be set to 2.5 (μm) or less or 2.0 (μm) or less, and the present invention may be applied by setting W1 to 1.5 (μm) or less.
The representative wavelength of the exposure light used for the exposure of the reticle of the present invention having such a transfer pattern, the phase difference between the main pattern and the auxiliary pattern It is about 180 degrees. That is, the phase difference between the representative wavelength of the light passing through the main pattern and the representative wavelength of the transmission auxiliary pattern 1 becomes about 180 degrees. The so-called 180 degrees means 120 to 240 degrees. Phase difference 1 is preferably 150 to 210 degrees.
Further, the photomask of the present invention is effective in the use of exposure light including i-line, h-line, or g-line, and it is particularly preferable to use wide-wavelength light including i-line, h-line, and g-line as exposure light. In this case, any one of the i line, the h line, and the g line can be set as the representative wavelength. For example, the h-line can be used as a representative wavelength to constitute the photomask of the present invention.
In order to form such a phase difference, the main pattern is a light-transmitting portion that exposes the main surface of the transparent substrate, and the auxiliary pattern is a semi-transmissive portion in which a semi-transmissive film is formed on the transparent substrate, and the semi-transparent portion is formed. The phase shift amount of the light film to the above representative wavelength may be set to about 180 degrees.
The light transmittance T1 of the semi-transmissive portion can be set as follows. That is, when the transmittance of the semi-transmissive film formed in the semi-transmissive portion to the representative wavelength is T1 (%),
30≦T1≦80.
Better
40≦T1≦75.
Further, the transmittance T1 (%) is a transmittance of the above representative wavelength when the transmittance of the transparent substrate is used as a reference.
In the reticle of the present invention, the low light-transmissive portion which is disposed in a region other than the region in which the main pattern and the auxiliary pattern are formed and which surrounds the main pattern and the auxiliary pattern can be configured as follows.
The low light transmission portion does not substantially expose the exposure light (light of a representative wavelength in the wavelength range of the i line to the g line) through the low light transmission film (ie, the light shielding film), and the low light transmission portion can be set to be optical. A film having a concentration of OD ≧ 2 (preferably OD ≧ 3, more preferably OD ≧ 5) is formed on a transparent substrate.
Alternatively, the low light transmissive portion may be formed as a low light transmissive film that transmits exposure light within a specific range. However, when the exposure light is transmitted in a specific range and the transmittance T3 (%) of the low light transmitting portion (here, when the semi-transmissive film and the low light-transmissive film are laminated, it is transmitted as a laminate thereof). Rate)
0<T3<T1.
Better to satisfy
0<T3≦20.
The transmittance T3 (%) is a transmittance of the above-mentioned representative wavelength when the transmittance of the transparent substrate is used as a reference.
Further, when the low light transmissive film transmits the exposure light at a specific transmittance as described above, the phase difference between the transmitted light of the low light transmitting portion and the transmitted light of the light transmitting portion 3 is preferably set to 90 degrees or less, more preferably 60 degrees or less. When the expression "90 degrees or less" is expressed in radians, it means that the phase difference is "(2n - 1/2) π - (2n + 1/2) π (here, n is an integer)". Similarly to the above, the calculation is performed in the form of a phase difference of the representative wavelengths included in the exposure light.
Further, as a separate property of the low light transmissive film used in the photomask of the present invention, it is preferable that the light of the above representative wavelength is not substantially transmitted or has a transmittance of less than 30% (T2 (%). )) (ie 0<T2<30) and phase offset ( 2) is about 180 degrees. The so-called 180 degrees means 120 to 240 degrees. Phase difference 1 is preferably 150 to 210 degrees.
The transmittance here is also the transmittance of the above-mentioned representative wavelength when the transmittance of the transparent substrate is used as a reference, as described above.
In the transfer pattern, when the width of the auxiliary pattern is d (μm) and between the width d of the auxiliary pattern and the light transmittance T1 of the portion
0.5≦ ×d≦1.5 ・・・(2)
When it is established, the excellent effect of the invention can be obtained. Here, ×d is a factor indicating the amount of light transmitted through the auxiliary pattern (hereinafter, simply referred to as a factor). Formula (2) represents a preferred range of the above factors, and if the above factor is more than 1.5, as shown in FIG. 5(b), the thickness loss in the slit portion of the photoresist increases to exceed the allowable range. When the above factor is less than 0.5, sufficient resolution cannot be obtained. At this time, the distance between the center of the main pattern and the center of the auxiliary pattern in the width direction is defined as a pitch P (μm), and with respect to the pitch P, it is preferably
1.0<P≦5.0
The relationship is established.
The pitch P can be set even better
1.5<P≦4.5.
In the present invention, the auxiliary pattern has an effect of imparting an optical effect such as a Dense Pattern to the main pattern which is designed to be isolated, but when the above relationship is satisfied, the exposure through the main pattern and the auxiliary pattern is performed. The light can exert a good interaction with each other and exhibit excellent transfer properties as shown in the following examples.
The width d (μm) of the auxiliary pattern is the size below the resolution limit (for example, d ≦ 3.0, preferably d ≦ 2.5) in the exposure conditions (the exposure apparatus used) to which the reticle of the present invention is applied. As a specific example,
D≧0.7
Better
d≧0.8.
Further, it is preferably d ≦ W1, more preferably d < W1.
Further, the relational expression of the above (2) is more preferably the following formula (2)-1, and further preferably the following formula (2)-2.
0.7≦ ×d≦1.2 ・・・(2)-1
0.75≦ ×d≦1.0 ・・・(2)-2
As described above, the main pattern of the photomask shown in Fig. 1 is a square, but the present invention is not limited thereto. For example, as illustrated in FIG. 2, the main pattern of the reticle may be a shape including a rotational symmetry of an octagon or a circle. Further, the center of the rotational symmetry can be set as the center of the reference of the above P.
Further, the shape of the auxiliary pattern of the mask shown in Fig. 1 is an octagonal belt, but the present invention is not limited thereto. It is preferable that the shape of the auxiliary pattern is such that a shape is given a certain width to the shape of the rotating object that is symmetrical three or more times with respect to the center of the hole pattern. The shapes of the preferred main pattern and the auxiliary pattern are the shapes illustrated in FIGS. 2(a) to (f), and the design of the main pattern and the design of the auxiliary pattern may also be different from each other in FIGS. 2(a) to (f). combination.
For example, a case where the outer circumference of the auxiliary pattern is a square, a regular hexagon, a regular octagon, a regular decagon, or the like (preferably a positive 2n polygon, where n is an integer of 2 or more) or a circular shape is exemplified. . Further, as the shape of the auxiliary pattern, it is preferable that the outer circumference of the auxiliary pattern is almost parallel to the inner circumference, that is, a shape of a regular polygon or a circular belt having an almost fixed width. The strip shape is also referred to as a polygonal belt or a circular belt. As the shape of the auxiliary pattern, such a regular polygonal belt or a circular belt preferably has a shape surrounding the periphery of the main pattern. At this time, the balance of the amount of transmitted light of the transmitted light of the main pattern and the auxiliary pattern can be made almost equal, and thus the interaction of light for obtaining the effect of the present invention can be easily obtained.
In particular, when the photomask of the present invention is used as a photomask for manufacturing a display device, that is, when the photomask of the present invention is used in combination with a photoresist for manufacturing a display device, it can be reduced in transfer. The photoresist loss of the portion corresponding to the auxiliary pattern on the body.
Alternatively, the shape of the auxiliary pattern may be a shape that does not completely surround the periphery of the main pattern and a portion of the polygonal belt or the circular belt is missing. As shown in Fig. 2(f), the shape of the auxiliary pattern may be, for example, a shape in which the corner portion of the quadrilateral belt is missing.
Further, as long as the effects of the present invention are not impaired, other patterns may be additionally used in addition to the main pattern and the auxiliary pattern of the present invention.
An example of a method of manufacturing a photomask according to the present invention will be described below with reference to Fig. 3 .
As shown in Fig. 3 (a), a photomask substrate is prepared.
The reticle base is formed with a semi-transmissive film and a low-transparent film sequentially on a transparent substrate including glass or the like, and further coated with a first photoresist film.
When the semi-transmissive film is a representative wavelength of any of the i-line, the h-line, and the g-line, the transmittance of the representative wavelength on the main surface of the transparent substrate is 30 to 80 (%) (in the case of T1) (%) is a film having a transmittance of 30 ≦ T1 ≦ 80), more preferably 40 to 75 (%), and a phase shift amount to the representative wavelength of about 180 degrees. With such a semi-transmissive film, the phase difference of the transmitted light between the main pattern including the light transmitting portion and the auxiliary pattern including the semi-light transmitting portion can be about 180 degrees. Such a semi-transmissive film shifts the phase of light of a representative wavelength in the wavelength range of the i-th to g-line by about 180 degrees. As a film forming method of the semi-transmissive film, a known method such as a sputtering method can be applied.
The semi-transmissive film preferably satisfies the above-described transmittance and phase difference, and includes a material which can be wet-etched as described below. However, if the amount of side etching generated during wet etching becomes too large, there is a failure in the deterioration of the CD precision or the destruction of the overlying film due to undercutting, so the film thickness is preferably in the range of 2000 Å. the following. For example, it is in the range of 300 to 2000 Å, more preferably 300 to 1800 Å. The term "CD" as used herein refers to Critical Dimension, which is used in the meaning of the pattern line width in this specification.
Further, in order to satisfy these conditions, the semi-transmissive film material preferably has a refractive index of 1.5 to 2.9 which is a representative wavelength (for example, h line) contained in the exposure light. More preferably, it is 1.8 to 2.4.
Further, in order to sufficiently exhibit the phase shift effect, the pattern cross section (etched surface) formed by wet etching is preferably close to the main surface of the transparent substrate.
In consideration of the above properties, the film material of the semi-transmissive film may be composed of zirconium (Zr), niobium (Nb), hafnium (Hf), tantalum (Ta), molybdenum (Mo), and titanium (Ti). Any of the materials of bismuth (Si) or materials comprising oxides, nitrides, oxynitrides, carbides, or oxycarbonitrides of such materials.
A low light transmissive film is formed on the semi-transparent film of the reticle base. As the film formation method, a known method such as a sputtering method can be applied as in the case of the semi-transmissive film.
The low light transmissive film of the mask base may be a light shielding film that does not substantially transmit the exposure light. Alternatively, it may be set to have a specific low transmittance for the representative wavelength of the exposure light. The low light transmissive film used in the manufacture of the photomask of the present invention has a transmittance T2 (%) lower than the transmittance T1 (%) of the semi-transmissive film for the light of the representative wavelength in the wavelength range of the i line to the g line. .
When the low light transmissive film can transmit the exposure light, the transmittance and phase shift amount of the low light transmissive film to the exposure light can be required to reach the transmittance and phase shift amount of the low light transmitting portion of the photomask of the invention. . Preferably, in the laminated state of the low light transmissive film and the semi-transmissive film, the transmittance T3 (%) of the light representing the wavelength of the exposure light is T3 ≦ 20, and the phase shift amount is further 3 is set to 90 (degrees) or less, and more preferably set to 60 (degrees) or less.
As a separate property of the low light transmissive film, it is preferable that the light of the above representative wavelength is not substantially transmitted or has a transmittance (T2 (%)) of less than 30 (%) (ie, 0<T2<30) and Phase offset 2) is about 180 degrees. The so-called 180 degrees means 120 to 240 degrees. Phase difference 1 is preferably 150 to 210 (degrees).
The material of the low light transmissive film of the mask base may be chromium (Cr) or a compound thereof (oxide, nitride, carbide, nitrogen oxide, or carbon oxynitride), or may also contain molybdenum (Mo). a metal halide of tungsten (W), tantalum (Ta), titanium (Ti) or the above compound of the telluride. However, the material of the low light transmissive film of the photomask base is preferably a material which can be wet-etched in the same manner as the semi-transparent film and which has etching selectivity to the material of the semi-transparent film. That is, it is preferable that the low light transmissive film is resistant to the etchant of the semi-transparent film, and the low semi-transmissive film is resistant to the etchant of the light transmissive film.
A first photoresist film is further coated on the low light transmissive film of the mask substrate. The photomask of the present invention is preferably drawn by a laser mapping device, and is therefore a photoresist suitable for a laser mapping device. The first photoresist film may be a positive type or a negative type, and the following description will be made as a positive type.
Then, as shown in FIG. 3(b), the first photoresist film is subjected to drawing (first drawing) based on the drawing material based on the transfer pattern using a drawing device. Next, the low light-transmissive film is wet-etched by using the first photoresist pattern obtained by development as a mask. Thereby, the area which becomes a low light transmission part is defined, and the area of the auxiliary pattern (low light-transmission film pattern) enclosed by the low light-transmitting part is defined. An etchant (wet etchant) for wet etching can be used by a person well-known for the composition of the low light-transmissive film to be used. For example, as long as it is a film containing chromium (Cr), ammonium cerium nitrate or the like can be used as a wet etchant.
Then, as shown in FIG. 3(c), the first photoresist pattern is peeled off.
Then, as shown in FIG. 3(d), the second photoresist film is applied to the entire surface including the formed low light transmissive film pattern.
Then, as shown in FIG. 3(e), the second photoresist film is subjected to the second drawing to form a second photoresist pattern formed by development. The second photoresist pattern and the low light transmissive film pattern are used as a mask to perform wet etching of the semi-transmissive film. By this etching (development), a region including the main pattern of the light transmitting portion exposing the transparent substrate is formed. Further, the second photoresist pattern preferably covers the region to be the auxiliary pattern and has an opening in a region which becomes the main pattern including the light transmitting portion, and is exposed from the opening at the edge of the low light transmitting film. The drawing data of the drawing is pre-formed. Thereby, the alignment deviation between the first drawing and the second drawing can be absorbed, and deterioration of the CD precision of the transfer pattern can be prevented.
In other words, when the second resist pattern is formed in the second drawing as described above, when the isolated hole pattern is to be formed on the transfer target, the patterning of the light shielding film and the semi-transmissive film does not cause a positional deviation. In the transfer pattern illustrated in FIG. 1, the center of gravity of the main pattern and the auxiliary pattern can be accurately aligned.
The wet etchant for the semi-transparent film is appropriately selected depending on the composition of the semi-transmissive film.
Then, as shown in FIG. 3(f), the second photoresist pattern is peeled off, and the photomask of the present invention shown in FIG. 1 is completed.
When an optical film such as a light-shielding film formed on a transparent substrate is patterned in the production of a photomask for a display device, there are dry etching and wet etching as the etching to be applied. Either one can be used, but in the present invention, wet etching is particularly advantageous. The reason for this is that the size of the photomask for the display device is relatively large, and thus there are various sizes. In the manufacture of such a reticle, if dry etching using a vacuum chamber is applied, the dry etching apparatus may be large or the manufacturing steps may be inefficient.
However, there are also problems associated with the application of wet etching in the manufacture of such a mask. Since the wet etching has the property of isotropic etching, when a specific film is to be etched and eluted in the depth direction, etching is also performed in a direction perpendicular to the depth direction. For example, when a semi-transmissive film having a film thickness F (nm) is etched to form a slit, the opening of the photoresist pattern that becomes the etching mask is reduced by 2F (nm) than the required slit width (ie, a single The side F (nm)), but the thinner the slit, the more difficult it is to maintain the dimensional accuracy of the opening of the resist pattern. Therefore, it is useful to set the width d of the auxiliary pattern to 1 μm or more, and preferably 1.3 μm or more.
Further, when the film thickness F (nm) is large, the amount of side etching is also increased. Therefore, it is advantageous to use a film material having a phase shift amount of about 180 degrees even if the film thickness is small. The refractive index of the light transmissive film is higher for this wavelength. Therefore, it is preferred to use a material such as a material having a refractive index of 1.5 to 2.9, preferably 1.8 to 2.4, for the above-mentioned representative wavelength.
The present invention includes a method of manufacturing a display device including a step of transferring the transfer pattern onto the transfer target by exposing the photomask of the present invention by an exposure device.
The manufacturing method of the display device of the present invention first prepares the above-described photomask of the present invention. Then, using an exposure apparatus having a numerical aperture (NA) of 0.08 to 0.20 and having an exposure light source including an i-line, an h-line, and a g-line, the transfer pattern is exposed, and a diameter W2 is formed on the transfer target. A hole pattern of 0.6 to 3.0 μm. Exposure is generally advantageous and uses equal exposure.
As the exposure machine used for transferring the transfer pattern by using the photomask of the present invention, an exposure machine in which the projection exposure is performed as exemplified below is exemplified. In other words, it is used as an exposure machine for LCD (Liquid Crystal Display) (or for FPD (Flat Panel Display), liquid crystal), and its numerical system has a numerical aperture (NA) of 0.08 ～. 0.15 (coherence factor (σ) is 0.4 to 0.9), and at least one of the i line, the h line, and the g line is included in a light source of exposure light (also referred to as a wide wavelength light source). However, it is of course possible to apply the present invention to obtain the effects of the invention even in an exposure apparatus in which the numerical aperture NA is 0.10 to 0.20.
Further, the light source of the exposure apparatus to be used may be a modified illumination (such as a ring illumination), and even if it is a non-deformation illumination, an excellent effect of the invention can be obtained.
The present invention comprises a reticle substrate for making the reticle of the present invention described above. Specifically, the reticle substrate of the present invention is formed by laminating a semi-transparent film and a low-transparent film on a transparent substrate. It is also possible to apply a photoresist film.
The physical properties, film quality, and composition of the semi-transparent film and the low light transmissive film are as described above.
That is, the transmissivity T1 of the semi-transmissive film of the photomask base of the present invention in the wavelength range of the i-line to the g-line is 30 to 80 (%). The semi-transmissive film has a film thickness of 1.5 to 2.9 with respect to the above-mentioned representative wavelength and a phase shift amount of about 180 degrees. The film thickness of the semi-transmissive film having such a refractive index has a desired phase shift amount even if it is sufficiently thin, so that the wet etching time of the semi-transmissive film can be shortened. As a result, the side etching of the semi-transparent film can be suppressed.
The low light transmissive film of the photomask substrate of the present invention has a transmittance for a representative wavelength smaller than that of the above semitransparent film. The low light transmissive film does not substantially pass the light of the above representative wavelength or has a transmittance of less than 30% and a phase shift of about 180 degrees.
[Examples]
The transfer performance of the three kinds of masks (Comparative Examples 1-1 and 1-2 and Example 1) shown in Fig. 4 was compared and evaluated by optical simulation. In other words, when the exposure conditions of the three masks having the transfer pattern for forming the hole pattern having the diameter of 2.0 μm on the transfer target are set to be common, the transfer performance is visually displayed.
(Comparative Example 1-1)
As shown in FIG. 4, the photomask of Comparative Example 1-1 has a pattern of a so-called binary mask including a light-shielding film pattern formed on a transparent substrate. In the reticle of Comparative Example 1-1, the main pattern including the light transmitting portion exposing the transparent substrate was surrounded by the light shielding portion. The diameter W1 (one side of the square) of the main pattern is 2.0 (μm).
(Comparative Example 1-2)
As shown in FIG. 4, the photomask of Comparative Example 1-2 is formed by patterning a semi-transmissive film having an exposure light transmittance (h line) of 5% and a phase shift amount of 180 degrees. A halftone type phase shift mask comprising a main pattern of a translucent portion of a quadrilateral having a diameter (i.e., W1) of 2.0 (μm).
(Example 1)
As shown in Fig. 4, the photomask of Example 1 has the transfer pattern of the present invention. Here, the main pattern is a square having a side (diameter) (ie, W1) of 2.0 (μm), and the auxiliary pattern is an octagonal strip having a width d of 1.3 (μm), and the center of the main pattern and the width of the auxiliary pattern are The distance, that is, the pitch P is set to 4 (μm).
The auxiliary pattern is formed with a semi-transmissive film on the transparent substrate. The exposure light (for the h-line) of the semi-transmissive film has a transmittance T1 of 70 (%) and a phase shift amount of 180 degrees. Further, the low light transmissive portion surrounding the main pattern and the auxiliary pattern includes a light shielding film (OD>2) that does not substantially transmit the exposure light.
In any of the photomasks of Comparative Examples 1-1 and 1-2 and Example 1, the diameter W2 was 2.0 μm (W1=W2) on the object to be transferred, that is, formed on the object to be transferred. The upper diameter W2 is the same as the diameter W1 of the main pattern of the transfer pattern of the mask. The exposure conditions applied in the simulation are as follows. That is, the exposure light is a wide wavelength including the i-line, the h-line, and the g-line, and the intensity ratio is set to g:h:i=1:0.8:1.
The optical system of the exposure apparatus has a NA of 0.1 and a coherence factor σ of 0.5. The film thickness of the positive type resist which is used to obtain the cross-sectional shape of the photoresist pattern formed on the object to be transferred is set to 1.5 μm.
The performance evaluation of each transfer pattern under the above conditions is shown in Fig. 4 . Further, the spatial image of the light intensity formed on the transfer target and the cross-sectional shape of the photoresist pattern formed by the aerial image are shown in Fig. 5.
(optical evaluation of the mask)
For example, in order to transfer a fine light transmissive pattern having a small diameter, the distribution of the exposure light transmitted through the reticle to the transfer target, that is, the distribution of the transmitted light intensity curve, must be good. Specifically, the peak of the peak of the transmitted light intensity is steep and the degree of rise is close to vertical, and the absolute value of the intensity of the peak is high (when the sub-peak is formed around, the intensity of the sub-peak is relatively sufficiently High) is the key.
When the photomask is relatively quantitatively evaluated based on optical performance, the following indicators can be used.
(1) Depth of focus (DOF)
It is used to be a depth of focus within a range of ±10% with respect to the target CD. When the value of the DOF is high, it is less likely to be affected by the flatness of the object to be transferred (for example, a panel substrate for a display device), and a fine pattern can be reliably formed, and CD variation can be suppressed.
(2) MEEF (Mask Error Enhancement Factor)
It is a numerical value indicating the ratio of the Mask CD (Mask Critical Dimension) error to the CD error of the pattern formed on the transfer target, and the lower the MEEF, the more the formation on the transfer target can be reduced. The CD error of the pattern.
(3) Eop (sensitivity)
Among the reticle used for the manufacture of display devices, an evaluation item which is particularly important is Eop. It is an amount of exposure light necessary for forming the pattern size to be obtained on the object to be transferred. In the manufacture of a display device, since the size of the mask is large (for example, one side of the main surface is a square or a rectangle of about 300 to 1400 mm), if a mask having a low Eop value is used, the scanning exposure speed can be increased. Thereby improving production efficiency.
When the performance of each sample of the simulation target is evaluated in view of the above, as shown in FIG. 4, the mask of the first embodiment is displayed in such a manner that the depth of focus (DOF) is expanded to 55 μm or more, which is extremely excellent compared with the comparative example. A stable transferability of the pattern. This means that the value of MEEF is small, and the CD accuracy of the fine pattern is also high.
Further, the value of Eop of the photomask of Example 1 was extremely small. This case is shown in the case of the reticle of the first embodiment, and even if a large-area display device is manufactured, the exposure time does not increase or the exposure time can be shortened.
Further, referring to the spatial image of the transmitted light intensity shown in FIG. 5, it is understood that the threshold value of the photoresist is used as the threshold value of the photoresist (Eth (Exposure Threshold) threshold value in the case of the photomask of the first embodiment. )), the peak of the main pattern portion can be increased, or the inclination of the peak can be made sufficiently steep (close to the surface perpendicular to the object to be transferred). This case is superior to Comparative Examples 1-1 and 1-2. Here, the increase in Eop and the decrease in MEEF are achieved by utilizing the light transmitted through the auxiliary pattern to enhance the light intensity at the position of the main pattern. Further, in the reticle of the first embodiment, side peaks were generated on both sides of the transfer image position of the main pattern, but since it was equal to or less than Eth, the transfer of the main pattern was not affected.
Further, a method for reducing the loss of the photoresist residual film derived from the side peak will be described below.
The design of the transfer pattern formed in the photomask was changed, and the simulation was performed using the samples of Comparative Example 2-1, Comparative Example 2-2, and Example 2 shown in FIG. Here, the samples (Comparative Example 1-1, Comparative Example 1-2, and Example 1) were different from each other in that the diameter W1 of the main pattern of each sample was 2.5 (μm).
(Comparative Example 2-1)
As shown in FIG. 6, the photomask of Comparative Example 2-1 is a so-called binary mask pattern of a light-shielding film pattern formed on a transparent substrate. In the photomask of Comparative Example 2-1, the main pattern including the light transmitting portion exposing the transparent substrate was surrounded by the light shielding portion. The diameter W1 (one side of the square) of the main pattern is 2.5 (μm).
(Comparative Example 2-2)
As shown in FIG. 6, the mask of Comparative Example 2-1 is formed by patterning a semi-transmissive film having an exposure light transmittance (h line) of 5% and a phase shift amount of 180 degrees. A halftone type phase shift mask including a main pattern of a light-transmissive portion of a quadrilateral of a diameter W1 (one side of a square) of a main pattern of 2.5 (μm).
(Example 2)
As shown in Fig. 6, the photomask of the second embodiment is a transfer pattern of the present invention. The main pattern of the reticle of Embodiment 2 is a square having a diameter W1 (one side of a square) of 2.5 (μm), and an auxiliary pattern is an octagon belt having a width d of 1.3 (μm), a center of the main pattern and an auxiliary pattern. The distance from the center of the width, that is, the pitch P is set to 4 (μm).
A hole pattern having a diameter of 2.0 μm was formed on the transfer target by using the photomasks of Comparative Example 2-1, Comparative Example 2-2, and Example 2. That is, the mask deviation (β = W1 - W2) of the masks is set to 0.5 (μm). The exposure conditions applied in the simulation were the same as those of Comparative Examples 1-1 and 1-2 and the photomask of Example 1.
According to the data shown in Fig. 6, in the case of using the photomask of Example 2, excellent DOF and MEEF were exhibited, and the advantageous properties with respect to Comparative Examples 2-1 and 2-2 were exhibited. In the reticle of Embodiment 2, especially the DOF became a value exceeding 35 μm.
Further, when the spatial image of the transmitted light intensity and the cross-sectional shape of the resist pattern on the transfer target shown in Fig. 7 are referred to, the excellent characteristics of the sample of the second embodiment are further clarified. As shown in Fig. 7, in the case of using the photomask of the second embodiment, the peak corresponding to the main pattern is exceptionally higher than the side peaks formed on both sides, and photoresist damage is hardly generated.
According to the above results, in the case of pattern transfer using the photomask of the present invention, the transfer pattern having a mask deviation β of about 0.5 (μm), specifically, a range of 0.2 to 1.0 (μm) is clarified. Among them, an excellent transfer image which is easier to use for practical use can be obtained.
From the above, the excellent performance of the photomask of the present invention was confirmed. In particular, when the photomask of the present invention is used, MEEF can obtain a value of 2.5 or less in a fine pattern of 2 μm or less, which is of great significance in the future manufacture of a display device.
The use of the photomask of the present invention is not particularly limited. The photomask of the present invention can be preferably used in the manufacture of a display device including a liquid crystal display device or an EL display device.
According to the reticle of the present invention, the mutual interference of the exposure light transmitted through both the main pattern and the auxiliary pattern can be controlled, and the zero-order light is reduced at the time of exposure to relatively increase the ratio of the light of ±1 time. Therefore, the spatial image of transmitted light can be greatly improved.
As an application for advantageously obtaining such an effect, it is advantageous to use the photomask of the present invention in order to form an isolated hole pattern such as a contact hole which is widely used for a liquid crystal or an EL device. As a kind of pattern, in many cases, a plurality of patterns are arranged with a certain regularity so as to be equally distinguished as a Dense pattern that optically affects each other and there is no such regular arrangement. Isolated pattern of the pattern. The photomask of the present invention is suitably applied when an isolated pattern is to be formed on the transferred body.
It is also possible to use an additional optical film or functional film to the photomask of the present invention within a range that does not impair the effects of the present invention. For example, it is possible to form a light-shielding film in a region other than the transfer pattern, in order to prevent the light transmittance of the low-light-transmissive film from being hindered by the inspection or the position detection of the photomask. Further, in the semi-transmissive film, an antireflection layer for reducing the reflection of the drawing light or the exposure light may be provided on the surface thereof. Further, the semi-transmissive film may have a low-reflection layer for suppressing back surface reflection on the transparent substrate side.
d‧‧‧寬度‧‧‧Width
P‧‧‧間距 P‧‧‧ spacing
W1‧‧‧直徑 W1‧‧‧ diameter
圖1係本發明之光罩之一例之(a)俯視模式圖及(b)剖視模式圖。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a (a) top plan view and (b) a cross-sectional view of an example of a photomask of the present invention.
圖2係本發明之光罩之其他例之俯視模式圖(a)～(f)。 Fig. 2 is a plan view (a) to (f) of another example of the reticle of the present invention.
圖3(a)～(f)係表示本發明之光罩之製造步驟之一例的剖視模式圖及俯視模式圖。 3(a) to 3(f) are a cross-sectional schematic view and a plan view schematically showing an example of a manufacturing process of the photomask of the present invention.
圖4係表示比較例1-1及1-2以及實施例1之光罩之俯視模式圖、尺寸及藉由光學模擬而得之轉印性能之圖。 4 is a plan view showing a plan view, a size, and a transfer performance by optical simulation of the photomasks of Comparative Examples 1-1 and 1-2 and Example 1.
圖5係表示使用比較例1-1及1-2以及實施例1之光罩之情形時之(a)形成於被轉印體上之光強度之空間像、及(b)藉此而形成之光阻圖案之剖面形狀的圖。 Fig. 5 is a view showing (a) a spatial image of light intensity formed on a transfer target in the case of using the photomasks of Comparative Examples 1-1 and 1-2 and Example 1, and (b) forming thereby A diagram of the cross-sectional shape of the photoresist pattern.
圖6係表示比較例2-1及2-2以及實施例2之光罩之俯視模式圖、尺寸及藉由光學模擬而得之轉印性能之圖。 Fig. 6 is a plan view showing a plan view, a size, and a transfer performance by optical simulation of the photomasks of Comparative Examples 2-1 and 2-2 and Example 2.
圖7係表示使用比較例2-1及2-2以及實施例2之光罩之情形時之(a)形成於被轉印體上之光強度之空間像、及(b)藉此而形成之光阻圖案之剖面形狀的圖。 Fig. 7 is a view showing (a) a spatial image of the light intensity formed on the transfer target in the case of using the photomasks of Comparative Examples 2-1 and 2-2 and Example 2, and (b) forming thereby A diagram of the cross-sectional shape of the photoresist pattern.
Claims (22)
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| JP2014-146847 | 2014-07-17 | ||
| JP2014146847A JP6581759B2 (en) | 2014-07-17 | 2014-07-17 | Photomask, photomask manufacturing method, photomask blank, and display device manufacturing method |
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| TW201921091A true TW201921091A (en) | 2019-06-01 |
| TWI690770B TWI690770B (en) | 2020-04-11 |
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| TW108100864A TWI690770B (en) | 2014-07-17 | 2015-06-11 | Photomask and method of manufacturing a display device |
| TW104118949A TWI621907B (en) | 2014-07-17 | 2015-06-11 | Photomask, method of manufacturing a photomask, photomask blank and method of manufacturing a display device |
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| JP6259509B1 (en) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | Halftone mask, photomask blank, and method of manufacturing halftone mask |
| JP6808665B2 (en) * | 2017-03-10 | 2021-01-06 | Hoya株式会社 | Photomask for manufacturing display devices and manufacturing method for display devices |
| JP7080070B2 (en) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | Manufacturing method of photomask and display device |
| JP6964029B2 (en) * | 2017-06-06 | 2021-11-10 | Hoya株式会社 | Manufacturing method of photomask and display device |
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| CN105319831B (en) | 2019-11-12 |
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