CN103746008A - Antireflection layer for solar cell and preparing process of antireflection layer - Google Patents
Antireflection layer for solar cell and preparing process of antireflection layer Download PDFInfo
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- CN103746008A CN103746008A CN201410031087.9A CN201410031087A CN103746008A CN 103746008 A CN103746008 A CN 103746008A CN 201410031087 A CN201410031087 A CN 201410031087A CN 103746008 A CN103746008 A CN 103746008A
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- antireflection layer
- layer
- gadolinium oxide
- solar batteries
- annealing
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- 238000000034 method Methods 0.000 title claims abstract description 33
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000137 annealing Methods 0.000 claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 229940075613 gadolinium oxide Drugs 0.000 claims description 25
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 25
- 238000002360 preparation method Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000003595 mist Substances 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 238000009792 diffusion process Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- BSOLFGGMHJGRGC-UHFFFAOYSA-N [O-2].[Al+3].[O-2].[Gd+3] Chemical compound [O-2].[Al+3].[O-2].[Gd+3] BSOLFGGMHJGRGC-UHFFFAOYSA-N 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an antireflection layer for a solar cell and a preparing process of the antireflection layer. The antireflection layer is characterized by being formed by Gd2O3. The preparing process comprises the steps of firstly depositing a Gd2O3 antireflection layer at one side of an N-type diffusion layer of a P-type silicon with an organic chemical vapor deposition method, then performing annealing treatment to form an SiO2 buffer layer between the antireflection layer and the N-type diffusion layer, thus finishing the preparing of the antireflection layer. The antireflection layer has the advantages of being low in Si lattice miss-matching ratio, large in forbidden bandwidth, high in refractive index, good in stability and the like.
Description
Technical field
The invention belongs to semiconductor applications, relate in particular to the application of photoelectricity class material, be specifically related to a kind of antireflection layer and preparation technology thereof.
Background technology
Antireflection layer is extremely important for solar cell, and it can increase solar cell light absorption by reducing solar cell reverberation, improves the short circuit current of solar cell, thereby improves the photoelectric conversion efficiency of solar cell.And traditional reflection-reducing material exists the defect that is difficult to overcome, as SiO
2, MgF
2too low etc. reflection-reducing material refractive index, and TiO
2energy gap is too narrow, seeks the focus that a kind of high performance reflection-reducing material becomes current photovoltaic industry research.
Summary of the invention
The object of the present invention is to provide a kind of antireflection layer of solar cell, this antireflection layer adopts new reflection-reducing material,, the advantage such as energy gap large, refractive index high, good stability low with Si lattice mismatch rate that this reflection-reducing material has, can be used for replacing traditional SiO
2, MgF
2,tiO
2etc. reflection-reducing material, the present invention provides the preparation technology of this antireflection layer simultaneously.
For realizing the technical scheme that above-mentioned purpose of the present invention adopts, be: a kind of used for solar batteries antireflection layer, is characterized in that this antireflection layer is by gadolinium oxide (Gd
2o
3) form.
Antireflection layer of the present invention can be applicable in the anti-reflection layer of monocrystalline silicon, polysilicon solar cell.
The preparation technology of above-mentioned used for solar batteries antireflection layer, it is characterized in that in the making of P type crystalline silicon, when P type crystalline silicon completes after HF acid pickling process, adopt organic chemical vapor deposition method (MOCVD) on n type diffused layer, to deposit gadolinium oxide antireflection layer, and carry out annealing in process, between antireflection layer and n type diffused layer, form SiO
2resilient coating, completes the preparation of antireflection layer.
The optimum thickness of the gadolinium oxide antireflection layer depositing is 70～140nm.
In the MOCVD of gadolinium oxide deposition process, the organo-metallic compound that presoma is gadolinium, the reaction temperature of chamber is 300～700 ℃, and sedimentation time is 15～30min, and evaporating temperature is 100～250 ℃, and pressure is 2～10mbar, carrier gas is Ar and O
2mist.
Described annealing in process forms SiO
2the technique of resilient coating is: the cell piece that deposits gadolinium oxide antireflection layer is put into the annealing furnace that is connected with inert gas or oxidizing gas, controlling annealing temperature is 300～800 ℃, annealing time is 0.5～4 hour, forms the SiO of 1nm left and right between antireflection layer and n type diffused layer
2thin layer (resilient coating).
Described inert gas or oxidizing gas are Ar, N
2, N
2o or H
2in any.
In technique scheme of the present invention, in the manufacturing process of P type crystalline silicon, when after the cleaning of P type crystalline silicon substrate, making herbs into wool, diffusion phosphorus, etching edge, the washing of HF mordant, adopt organic chemical vapor deposition method (MOCVD) on crystal silicon chip, to deposit gadolinium oxide antireflection layer, and carry out annealing in process, between antireflection layer and n type diffused layer, form SiO
2resilient coating, completes the preparation of antireflection layer, then carries out the making of electrode and electric field, completes the preparation of crystal silicon battery.
Gd
2o
3the same with Si under normal temperature, be all Emission in Cubic structure, its dielectric constant is higher, K (Gd
2o
3, there is very near Lattice Matching constant (a(Gd)=14～22 with Si
2o
3)=10.812A; 2a(Si)=10.862A), lattice mismatch rate is very low, can on Si, grow high-quality film, Gd
2o
3having higher thermodynamic stability (>1000 ℃), larger band gap width (5.9ev) and higher refractive index (1.9), is the ideal material of preparing antireflection layer.
The present invention by gadolinium oxide as the reflection-reducing material of preparing the antireflection layer of solar cell; in the making of solar cell; first after the washing of P type silicon HF mordant, deposit gadolinium oxide antireflection layer; then under inert gas shielding environment or oxidizing gas protection of the environment, carry out annealing in process, between antireflection layer and crystal silicon battery, generated SiO
2resilient coating.Gadolinium oxide antireflection layer is prepared by MOCVD method, and the antireflection layer of acquisition and crystal silicon substrate lattice matching are good, and defect concentration is low, refractive index is high, thermal stability is good, energy gap is large, has guaranteed the anti-reflective effect of battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of the P type crystal silicon solar energy battery that contains gadolinium oxide antireflection layer;
Fig. 2 is the P type crystal silicon solar energy battery preparation flow figure that contains gadolinium oxide antireflection layer.
Embodiment
Below in conjunction with accompanying drawing and the concrete example of implementing, the present invention is done to further detailed description, yet described embodiment should not explain in the mode of restriction.
The antireflection layer of solar cell of the present invention and preparation technology thereof, be to complete after HF mordant operation at P type crystalline silicon, adopts organic chemical vapor deposition (MOCVD) method deposition gadolinium oxide antireflection layer.In gadolinium oxide MOCVD deposition process, the organo-metallic compound that presoma is gadolinium, the reaction temperature of chamber is 300～700 ℃, and sedimentation time is 15～30min, and evaporating temperature is 100～250 ℃, and pressure is 2～10mbar, carrier gas is Ar and O
2mist.Then carry out annealing in process and form SiO
2resilient coating, completes the preparation of antireflection layer.Annealing in process forms SiO
2the technique of resilient coating is: the cell piece that deposits gadolinium oxide-aluminium oxide antireflection layer is put into the annealing furnace that is connected with inert gas or oxidizing gas, controlling annealing temperature is 300～800 ℃, annealing time is 0.5～4 hour, forms the SiO of 1nm left and right between antireflection layer and n type diffused layer
2resilient coating.
Specific embodiment is as follows:
The P type crystal silicon solar energy battery preparation flow figure that contains gadolinium oxide antireflection layer providing from Fig. 2, can find out, its flow process of preparing P type crystal silicon solar energy battery is as follows:
A, use HF and HC1 carry out cleaning and texturing to P type crystalline silicon substrate, to remove mechanical damage layer, greasy dirt and metal impurities, form up-and-down matte simultaneously on surface, to increase surface area and then increase light absorption; Then P type crystal silicon substrate is put into diffuser chamber, pass into phosphorus source, make P elements diffuse into P type crystal silicon surface, form N layer, form PN junction; Then use HNO
3carry out periphery etching with the mixing material of HF, remove the N layer of marginal deposit, to make cell piece and external insulation; Then dephosphorization silex glass, washes with HF the materials such as silicon dioxide that form in diffusion process off.Be more than the common process in solar cell preparation process, at this, do not repeat.
B, complete after above step, P type crystal-silicon battery slice is put into rapidly to MOCVD reaction chamber, on the n type diffused layer of n type diffused layer one side, by MOCVD method, deposit gadolinium oxide antireflection layer, its THICKNESS CONTROL is within the scope of 70～140nm, in the preparation technology of gadolinium oxide antireflection layer, presoma is acetylacetone,2,4-pentanedione Gadolinium Gd(acac)
3, the reaction temperature of chamber is 300～700 ℃, and sedimentation time is 15～30min, and evaporating temperature is 100～250 ℃, and pressure is 2～10mbar, carrier gas is Ar and O
2mist.
C, deposited gadolinium oxide antireflection layer after, carry out annealing in process, between antireflection layer and n type diffused layer, generate SiO
2resilient coating.Cell piece is put into and is connected with Ar, N
2, N
2o or H
2in any annealing furnace in, annealing temperature is set within the scope of 300～800 ℃, annealing time was controlled within the scope of 0.5～4 hour, made to form between antireflection layer and n type diffused layer the SiO of 1nm left and right
2thin layer (SiO
2resilient coating), so far, completed the preparation of antireflection layer.
D, in battery backlight side, prepare aluminum back electric field and metal palisade back electrode, electrode before preparing metal grid lines to light side (containing antireflection layer one side), after oven dry, sintering circuit, makes the complete crystal-silicon solar cell with gadolinium oxide antireflection layer.
From the structural representation of the P type crystal silicon solar energy battery with gadolinium oxide antireflection layer shown in Fig. 1, can find out, on P type crystal silicon substrate 1, spread phosphorus, form N diffusion layer 2, then on N diffusion layer 2, adopt MOCVD method at its surface deposition one deck gadolinium oxide antireflection layer 3, gadolinium oxide antireflection layer 3, through annealing in process, forms SiO
2resilient coating 4, SiO
2resilient coating 4 is between antireflection layer 3 and n type diffused layer 2, finally silk screen printing aluminum back electric field 5 and metal grid lines back electrode 6 again on P type substrate 1, electrode 7 before screen-printed metal grid line on antireflection layer 3, thus the crystal silicon solar batteries with oxidation Gadolinium antireflection layer made.
Described organic chemical vapor deposition method (MOCVD), the general knowledge for those of ordinary skill in this area, no longer repeats.
Be more than to explanation of the present invention and non-limiting, other execution modes based on inventive concept, all within protection scope of the present invention.
Claims (7)
1. a used for solar batteries antireflection layer, is characterized in that this antireflection layer is to consist of gadolinium oxide.
2. according to used for solar batteries antireflection layer claimed in claim 1, it is characterized in that described antireflection layer is applied in the antireflective technique of monocrystalline silicon, polysilicon solar cell.
3. a technique of preparing the used for solar batteries antireflection layer described in claim 1 or 2, it is characterized in that in the making of P type crystalline silicon, when P type crystalline silicon completes after HF pickling process, adopt organic chemical vapor deposition method on n type diffused layer, to deposit gadolinium oxide antireflection layer, and carry out annealing in process, between antireflection layer and n type diffused layer, form SiO
2resilient coating, completes the preparation of antireflection layer.
4. according to the preparation technology of used for solar batteries antireflection layer claimed in claim 3, the thickness that it is characterized in that deposited gadolinium oxide antireflection layer is 70～140nm.
5. according to the preparation technology of used for solar batteries antireflection layer claimed in claim 3, it is characterized in that in the organic chemical vapor deposition method of gadolinium oxide, presoma is the organo-metallic compound of gadolinium, the reaction temperature of chamber is 300～700 ℃, sedimentation time is 15～30min, evaporating temperature is 100～250 ℃, and pressure is 2～10mbar, and carrier gas is Ar and O
2mist.
6. according to the preparation technology of used for solar batteries antireflection layer claimed in claim 3, it is characterized in that described annealing in process forms SiO
2the technique of resilient coating is: the cell piece that deposits gadolinium oxide antireflection layer is put into the annealing furnace that is connected with inert gas or oxidizing gas, controlling annealing temperature is 300～800 ℃, annealing time is 0.5～4 hour, forms the SiO of 1nm left and right between antireflection layer and n type diffused layer
2resilient coating.
7. according to the preparation technology of used for solar batteries antireflection layer claimed in claim 6, it is characterized in that described inert gas or oxidizing gas are Ar, N
2, N
2o or H
2in any.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410031087.9A CN103746008A (en) | 2014-01-23 | 2014-01-23 | Antireflection layer for solar cell and preparing process of antireflection layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410031087.9A CN103746008A (en) | 2014-01-23 | 2014-01-23 | Antireflection layer for solar cell and preparing process of antireflection layer |
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|---|---|
| CN103746008A true CN103746008A (en) | 2014-04-23 |
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ID=50503015
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240612A (en) * | 2017-06-06 | 2017-10-10 | 界首市七曜新能源有限公司 | Mono-crystalline silicon solar plate |
| CN108538932A (en) * | 2018-04-01 | 2018-09-14 | 格润智能光伏南通有限公司 | A kind of photovoltaic glass |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499492A (en) * | 2008-02-02 | 2009-08-05 | 财团法人工业技术研究院 | Transparent solar cell module |
| CN102856328A (en) * | 2012-10-10 | 2013-01-02 | 友达光电股份有限公司 | Solar battery and manufacturing method of same |
| CN103178135A (en) * | 2013-02-26 | 2013-06-26 | 友达光电股份有限公司 | Solar cell and preparation method thereof |
-
2014
- 2014-01-23 CN CN201410031087.9A patent/CN103746008A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499492A (en) * | 2008-02-02 | 2009-08-05 | 财团法人工业技术研究院 | Transparent solar cell module |
| CN102856328A (en) * | 2012-10-10 | 2013-01-02 | 友达光电股份有限公司 | Solar battery and manufacturing method of same |
| CN103178135A (en) * | 2013-02-26 | 2013-06-26 | 友达光电股份有限公司 | Solar cell and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240612A (en) * | 2017-06-06 | 2017-10-10 | 界首市七曜新能源有限公司 | Mono-crystalline silicon solar plate |
| CN107240612B (en) * | 2017-06-06 | 2019-02-12 | 界首市七曜新能源有限公司 | Mono-crystalline silicon solar plate |
| CN108538932A (en) * | 2018-04-01 | 2018-09-14 | 格润智能光伏南通有限公司 | A kind of photovoltaic glass |
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Application publication date: 20140423 |