CN108538932A - A kind of photovoltaic glass - Google Patents
A kind of photovoltaic glass Download PDFInfo
- Publication number
- CN108538932A CN108538932A CN201810279834.9A CN201810279834A CN108538932A CN 108538932 A CN108538932 A CN 108538932A CN 201810279834 A CN201810279834 A CN 201810279834A CN 108538932 A CN108538932 A CN 108538932A
- Authority
- CN
- China
- Prior art keywords
- layer
- reflecting layer
- layers
- glass
- antireflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- 229940075613 gadolinium oxide Drugs 0.000 claims description 3
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 230000008092 positive effect Effects 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 description 3
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 description 3
- 239000004035 construction material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a kind of photovoltaic glass, including AR antireflection layers and reflecting layer, AR antireflection layers are arranged in glass body upper surface, reflecting layer is arranged inside glass body, reflecting layer uses the reflecting layer with matte catoptric arrangement, the light-receiving surface in reflecting layer has certain matte catoptric arrangement, the matte catoptric arrangement, be conducive to the light for being incident on reflecting layer, cell piece surface is entered after secondary or multiple reflections, the present invention provides a kind of photovoltaic glass, the reflecting layer having inside it, rise to the ray density up to photovoltaic module internal cell piece, being promoted to the output power of photovoltaic module has positive effect.
Description
Technical field
The present invention relates to photovoltaic glass technical field, specially a kind of photovoltaic glass.
Background technology
Photovoltaic module（Also it is solar panel）It is the core in solar power system and solar power generation
Most important part in system.It is to convert solar energy into electrical energy, and be sent in accumulator and store, or push negative that it, which is acted on,
Carry work.But with the use of Miniature inverter, can the current source of photovoltaic module directly be transformed into 40V's or so
Voltage source, so that it may to drive in our life of appliance applications；Meanwhile photovoltaic module is being constantly brought forth new ideas, due to photovoltaic module
It is called made in China in the field of business, it should have Created in China, and then the upgrading innovative product of photovoltaic module occur, as photovoltaic is made pottery
Ceramic tiles, photovoltaic color steel tile, this kind of product can directly replace traditional construction material tile, also have the function of photovoltaic module, once step
Enter common market, certain impact will be caused to photovoltaic module and traditional construction material.
In photovoltaic industry, in order to obtain electric current, voltage and the output power needed for photovoltaic generation unit, and also to
Protect the battery from mechanical damage and environmental nuisance, it is necessary to several monolithic battery connection in series-parallel be connected and be packaged into photovoltaic module.
Under normal circumstances, the output power of the photovoltaic module after encapsulation（Actual power）Less than the sum of the performance number of all cell pieces（Reason
By power）, this is because light is after being irradiated to photovoltaic module surface, it may occur that and reflection and absorption, meanwhile, photovoltaic module light
In region, have a certain proportion of region be can not power generation region, which is used, original generating capacity is not being influenced
In the case of, make the region have must secondary reflection ability, be capable of the intensity of illumination in lifting assembly Partial discharge region, to
Lifting assembly output current, and then promote photoelectric conversion efficiency.
Currently, had been applied in photovoltaic module using the welding and welding pad pasting with matte catoptric arrangement, but
There is certain difficulty in process in it.The principle of the two is again by the interconnecting strip for being emitted onto cell piece connection
Glazed thread improves generating efficiency through secondary reflecting on cell piece.Based on above-mentioned background, the present invention program is that will have reflection knot
The reflecting layer of structure is combined with photovoltaic glass, need not increase the complexity of photovoltaic module production procedure, and is ensured simultaneously secondary
Reflection power gain effect.
Invention content
The purpose of the present invention is to provide a kind of photovoltaic glass, to solve the problems mentioned in the above background technology.
To achieve the above object, the present invention provides the following technical solutions：A kind of photovoltaic glass, including AR antireflection layers and anti-
Layer is penetrated, the AR antireflection layers setting is in glass body upper surface, and the reflecting layer is arranged inside glass body, the reflection
Layer has certain matte catoptric arrangement using the reflecting layer with matte catoptric arrangement, the light-receiving surface in the reflecting layer.
Preferably, the AR antireflection layers are constituted using gadolinium oxide；The AR antireflection layers thickness is 100-150 nanometers.
Preferably, the AR antireflection layers preparation method includes following method：Existed using organic chemical vapor deposition method
Deposited oxide gadolinium antireflection layer on the N type diffusion layers of glass body, and made annealing treatment, expand in antireflection layer and N types
Silica buffer layer is formed between scattered layer, completes the preparation of AR antireflection layers.
Preferably, the reflecting layer includes dielectric stack, Ni layers of centre, the reflecting layer Ag and metal laminated, the medium
Lamination includes alternately stacked silicon dioxide layer and titanium pentoxide layer, wherein the bottom of the dielectric stack is silica
Layer；Described intermediate Ni layers, it is incorporated into dielectric stack surface；The reflecting layer Ag are incorporated into the intermediate Ni layer surfaces；
It is described metal laminated, including alternately stacked Ni layers and Ag layers, wherein the metal laminated top layer is Ni layers.
Preferably, production method includes the following steps：
A, photovoltaic glass is embedded to several reflections with matte catoptric arrangement in advance in glass manufacturing stage by certain mode
Layer；
B, the reflecting layer of embedment is in any position in addition to glass outer surface, meanwhile, relative to cell piece, the reflecting layer position with
Battery grid line position consistency.
Compared with prior art, the beneficial effects of the invention are as follows：In the present invention, the light-receiving surface in reflecting layer has certain suede
Face catoptric arrangement, the matte catoptric arrangement, is conducive to the light for being incident on reflecting layer, and electricity is entered after secondary or multiple reflections
Pond piece surface, the present invention provide a kind of photovoltaic glass, inside the reflecting layer that has, rise to up to photovoltaic module internal cell
The ray density of piece, being promoted to the output power of photovoltaic module has positive effect.
Description of the drawings
Fig. 1 is sectional view of the present invention；
Fig. 2 is reflecting layer enlarged drawing of the present invention；
Fig. 3 is the distribution schematic diagram of reflecting layer in glass in the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
- 2 are please referred to Fig.1, the present invention provides a kind of technical solution：A kind of photovoltaic glass, including AR antireflection layers 1 and reflection
Layer 2, in 3 upper surface of glass body, the reflecting layer 2 is arranged inside glass body 3, described for the setting of AR antireflection layers 1
Reflecting layer 2 has certain matte reflection knot using the reflecting layer with matte catoptric arrangement, the light-receiving surface in the reflecting layer 2
Structure；The introducing in the reflecting layer of the present invention does not change glass other positions and structure, reflection layer number and width and cell piece grid line
And battery strings quantity is related, that is, reflects the product that layer number is equal to cell piece grid line number and battery strings quantity.
In the present invention, AR antireflection layers 1 are constituted using gadolinium oxide；1 thickness of AR antireflection layers is 100-150 nanometers；
1 preparation method of AR antireflection layers includes following method：N types using organic chemical vapor deposition method in glass body are spread
Deposited oxide gadolinium antireflection layer on layer, and made annealing treatment, form silica between antireflection layer and N type diffusion layers
Buffer layer completes the preparation of AR antireflection layers.The present invention AR antireflection layer defect concentrations are low, high refractive index, thermal stability
Well, energy gap is big, ensure that anti-reflective effect.
In the present invention, reflecting layer 2 includes dielectric stack, Ni layers of centre, the reflecting layer Ag and metal laminated, the medium
Lamination includes alternately stacked silicon dioxide layer and titanium pentoxide layer, wherein the bottom of the dielectric stack is silica
Layer；Described intermediate Ni layers, it is incorporated into dielectric stack surface；The reflecting layer Ag are incorporated into the intermediate Ni layer surfaces；
It is described metal laminated, including alternately stacked Ni layers and Ag layers, wherein the metal laminated top layer is Ni layers.This
Alternately stacked silicon dioxide layer and titanium pentoxide layer are invented, there is better reflecting effect compared to general dielectric layer；
Using ultra-thin intermediate Ni layers, the bond properties that reflectivity substantially increases the reflecting layer Ag and dielectric stack again is neither reduced,
Falling off for the reflecting layer Ag is avoided, reflecting layer of the invention has higher reflectivity and higher stability.
The production method of the present invention includes the following steps：
A, photovoltaic glass is embedded to several reflections with matte catoptric arrangement in advance in glass manufacturing stage by certain mode
Layer；
B, the reflecting layer of embedment is in any position in addition to glass outer surface, meanwhile, relative to cell piece, the reflecting layer position with
Battery grid line position consistency.
As shown in Fig. 3, the distribution situation of reflecting layer in glass is related with battery strings quantity and cell piece grid line quantity,
Fig. 3 is cell piece grid line 5, distribution situation when battery strings quantity 4 is gone here and there.
In the present invention, the light-receiving surface in reflecting layer has certain matte catoptric arrangement, the matte catoptric arrangement, be conducive into
It is mapped to the light in reflecting layer, cell piece surface is entered after secondary or multiple reflections, the present invention provides a kind of photovoltaic glass,
The reflecting layer that inside has rises to the ray density up to photovoltaic module internal cell piece, to the output power of photovoltaic module
Being promoted has positive effect.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of photovoltaic glass, it is characterised in that：Including AR antireflection layers（1）The reflecting layer and（2）, the AR antireflection layers（1）
It is arranged in glass body（3）Upper surface, the reflecting layer（2）It is arranged in glass body（3）Inside, the reflecting layer（2）Using
Reflecting layer with matte catoptric arrangement, the reflecting layer（2）Light-receiving surface have certain matte catoptric arrangement.
2. a kind of photovoltaic glass according to claim 1, it is characterised in that：The AR antireflection layers（1）Using gadolinium oxide
It constitutes；The AR antireflection layers（1）Thickness is 100-150 nanometers.
3. a kind of photovoltaic glass according to claim 2, it is characterised in that：The AR antireflection layers（1）Preparation method packet
Include following method：Using the deposited oxide gadolinium antireflective on the N type diffusion layers of glass body of organic chemical vapor deposition method
Layer, and made annealing treatment, silica buffer layer is formed between antireflection layer and N type diffusion layers, completes AR antireflectives
The preparation of layer.
4. a kind of photovoltaic glass described in accordance with the claim 3, it is characterised in that：The reflecting layer（2）Including dielectric stack,
Ni layers intermediate, reflecting layer Ag and metal laminated, the dielectric stack include alternately stacked silicon dioxide layer and five oxidations three
Titanium layer, wherein the bottom of the dielectric stack is silicon dioxide layer；Described intermediate Ni layers, it is incorporated into dielectric stack surface；
The reflecting layer Ag are incorporated into the intermediate Ni layer surfaces；It is described metal laminated, including alternately stacked Ni layers and Ag
Layer, wherein the metal laminated top layer is Ni layers.
5. realizing a kind of production method of photovoltaic glass described in claim 1, it is characterised in that：Its production method includes following
Step：
A, photovoltaic glass is embedded to several reflections with matte catoptric arrangement in advance in glass manufacturing stage by certain mode
Layer；
B, the reflecting layer of embedment is in any position in addition to glass outer surface, meanwhile, relative to cell piece, the reflecting layer position with
Battery grid line position consistency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810279834.9A CN108538932A (en) | 2018-04-01 | 2018-04-01 | A kind of photovoltaic glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810279834.9A CN108538932A (en) | 2018-04-01 | 2018-04-01 | A kind of photovoltaic glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108538932A true CN108538932A (en) | 2018-09-14 |
Family
ID=63482160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810279834.9A Pending CN108538932A (en) | 2018-04-01 | 2018-04-01 | A kind of photovoltaic glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108538932A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751005A (en) * | 2003-02-19 | 2006-03-22 | 默克专利股份有限公司 | Evaporation material for the production of average refractive optical layers |
| CN201336312Y (en) * | 2009-01-26 | 2009-10-28 | 河南华美新材料科技有限公司 | Double-sided anti-reflection film solar energy photovoltaic glass |
| CN103441175A (en) * | 2013-08-13 | 2013-12-11 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic module |
| WO2013182352A2 (en) * | 2012-06-05 | 2013-12-12 | Robert Bosch Gmbh | Solar module and method for the production thereof |
| CN203466206U (en) * | 2013-08-13 | 2014-03-05 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic assembly |
| CN103746008A (en) * | 2014-01-23 | 2014-04-23 | 通用光伏能源(烟台)有限公司 | Antireflection layer for solar cell and preparing process of antireflection layer |
| EP2876694A1 (en) * | 2013-11-20 | 2015-05-27 | Samsung SDI Co., Ltd. | Solar cell |
| CN207097836U (en) * | 2017-07-06 | 2018-03-13 | 泰州隆基乐叶光伏科技有限公司 | A kind of anti-PID photovoltaic glass |
-
2018
- 2018-04-01 CN CN201810279834.9A patent/CN108538932A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1751005A (en) * | 2003-02-19 | 2006-03-22 | 默克专利股份有限公司 | Evaporation material for the production of average refractive optical layers |
| CN201336312Y (en) * | 2009-01-26 | 2009-10-28 | 河南华美新材料科技有限公司 | Double-sided anti-reflection film solar energy photovoltaic glass |
| WO2013182352A2 (en) * | 2012-06-05 | 2013-12-12 | Robert Bosch Gmbh | Solar module and method for the production thereof |
| CN103441175A (en) * | 2013-08-13 | 2013-12-11 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic module |
| CN203466206U (en) * | 2013-08-13 | 2014-03-05 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic assembly |
| EP2876694A1 (en) * | 2013-11-20 | 2015-05-27 | Samsung SDI Co., Ltd. | Solar cell |
| CN103746008A (en) * | 2014-01-23 | 2014-04-23 | 通用光伏能源(烟台)有限公司 | Antireflection layer for solar cell and preparing process of antireflection layer |
| CN207097836U (en) * | 2017-07-06 | 2018-03-13 | 泰州隆基乐叶光伏科技有限公司 | A kind of anti-PID photovoltaic glass |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102544174B (en) | Solar cell assembly for increasing light energy utilization ratio | |
| WO2009116578A1 (en) | Solar cell | |
| TW201025637A (en) | Solar cell | |
| TW201021229A (en) | Solar cell having reflective structure | |
| JP2003142709A (en) | Laminated solar battery and method for manufacturing the same | |
| CN208548372U (en) | A kind of double-junction solar battery | |
| CN110061136A (en) | A kind of back-contact perovskite solar cell and preparation method thereof | |
| CN213601878U (en) | Solar cell and photovoltaic module | |
| CN205211772U (en) | High resistant photovoltaic module that waits | |
| CN204538038U (en) | Promote the solar components of the efficiency of light energy utilization | |
| CN108538932A (en) | A kind of photovoltaic glass | |
| CN102938430B (en) | Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer | |
| CN203071106U (en) | Backplane and photovoltaic assembly | |
| CN206259361U (en) | A kind of back electrode structure of silicon-based film solar cells | |
| CN105405910A (en) | Heterojunction solar cell, preparation method thereof and solar cell module | |
| CN111370580A (en) | Solar cell with hole transport layer | |
| CN202004002U (en) | Laminated antireflection film for monocrystal silicon solar cell | |
| CN109065732A (en) | A kind of perovskite battery and its glass cover-plate having both wide spectrum dimmer reflecting and ultraviolet filtering function | |
| CN209434211U (en) | A kind of two-sided double-glass solar energy assembly | |
| US20120017982A1 (en) | Thin Film Silicon Solar Cell and Manufacturing Method Thereof | |
| CN103000705A (en) | Crystalline silicon solar cell antireflection film | |
| CN106653902A (en) | Solar battery assembly | |
| TWI470814B (en) | Solar cell | |
| CN101764171A (en) | Solar energy battery with reflection structure | |
| CN211879397U (en) | High-light conversion efficiency and high-heat-dissipation high-power dual-glass assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180914 |
|
| RJ01 | Rejection of invention patent application after publication |