CN103722623B - The brisement jig and breaking method thereof of brittle material substrate - Google Patents
The brisement jig and breaking method thereof of brittle material substrate Download PDFInfo
- Publication number
- CN103722623B CN103722623B CN201310429653.7A CN201310429653A CN103722623B CN 103722623 B CN103722623 B CN 103722623B CN 201310429653 A CN201310429653 A CN 201310429653A CN 103722623 B CN103722623 B CN 103722623B
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- Prior art keywords
- brisement
- jig
- scribing line
- brittle material
- material substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The invention relates to the brisement jigs and breaking method thereof of a kind of brittle material substrate.The present invention can not damage functional area and will be with along longitudinal direction and lateral proper alignment and the semiconductor crystal wafer brisement of functional area that is formed.Scribing line is formed to advance clathrate when by 10 brisement of semiconductor crystal wafer.It is to use flat brisement jig 20 when carrying out brisement.Brisement has the slot 23,24 of the clathrate of spacing identical as the spacing of the scribing line of semiconductor crystal wafer 10 with jig 20, and is respectively provided with protection hole 21 at the center in each region surrounded by the slot.Moreover, carrying out position alignment in a manner of keeping the functional area of semiconductor crystal wafer 10 corresponding with the protection hole 21 of jig 20 with brisement, compresses brisement stick 33 along scribing line and carry out brisement.Thus, which when brisement, functional area 11 is not contacted with brisement with jig directly, so can not damage and by semiconductor crystal wafer brisement at multiple chips.
Description
Technical field
The present invention relates to one kind by brittle material substrates such as semiconductor crystal wafers and with along longitudinal direction and lateral proper alignment
And brisement jig of the substrate of the multiple functional areas (be also known as device area) formed when being directed to each functional area brisement
And breaking method thereof.
Background technology
Semiconductor chip be by will be formed in the element area of semiconductor crystal wafer in the boundary position disjunction in the region and
Manufacture.Previously, by wafer disjunction at chip situation when, be so that cutting blade is rotated by cutting brilliant device, and by cutting
Semiconductor crystal wafer is cut off smaller.
However, when using the situation for cutting brilliant device, it is necessary to the water that bits are discharged caused by cutting is discharged, in order not to
So that the water and discharge bits is generated harmful effect to the performance of semiconductor chip, it is necessary to implement protection to semiconductor chip, to
The front and back step of washing water or discharge bits.Accordingly, there exist steps to become complicated, is unable to cut cost and shortens lacking for process time
Point.Also, the problems such as generating film stripping due to the use of the cutting of cutting blade or generating fragment.Also, with small machinery
In MEMS (microelectromechanical system, MEMS) substrate of construction, the surface because of water can be caused
The destruction constructed caused by power, so can not use water, and leads to the problem of can not by cut crystalline substance and disjunction.
Also, being proposed in patent document 1,2 just like lower substrate brisement device, that is, there is the back of the body in the face of scribing line by self-forming
Face perpendicular to face presses along scribing line and is formed with the semiconductor crystal wafer of scribing line and carries out brisement.Hereinafter, indicating to utilize such brisement
The summary of the brisement of device.It is neatly arranged and formed multiple functional areas in the semiconductor crystal wafer as brisement object.Dividing
When disconnected situation, first, is separated in semiconductor crystal wafer and be formed in the longitudinal and the horizontal directions scribing line equal to the interval between functional area.So
Afterwards, using brisement device along the scribing line disjunction.Fig. 1 (a) is the semiconductor crystal wafer for being placed in brisement device before indicating disjunction
Sectional view.As shown in the drawing, semiconductor crystal wafer 101 be formed with functional area 101a, 101b therebetween be formed with scribing line S1,
S2、S3....In the situation of disjunction, adhesive tape 102 is pasted at the back side of semiconductor crystal wafer 101, is protected in its surface mount
Film 103.Then, configuration should be as shown in Fig. 1 (b) in the scribing line of the middle brisement of bearing knife 105,106, herein when brisement
It is scribing line S2 when situation, so that blade 104 is directed at scribing line from upper part and decline, and presses semiconductor crystal wafer 101.It carries out by this method
Utilize the brisement of a pair of of bearing knife 105,106 and the three-point bending of blade 104.
[prior art document]
[patent document]
[patent document 1] Japanese Patent Laid-Open 2004-39931 bulletins
[patent document 2] Japanese Patent Laid-Open 2010-149495 bulletins
In view of defect existing for above-mentioned existing substrate brisement device and breaking method thereof, the present inventor is based on being engaged in such
Product design manufactures abundant for many years practical experience and professional knowledge, and coordinates the utilization of scientific principle, is actively subject to research and innovation, with
Phase founds a kind of the brisement jig and breaking method thereof of new brittle material substrate, can improve general existing substrate brisement dress
It sets and breaking method thereof, it is made to have more practicability.By constantly studying, designing, and after studying sample repeatedly and improving,
Finally the present invention having practical value is created.
Invention content
In a breaking device having such a constitution, when the situation pressed blade 104 down in brisement, semiconductor die
Circle 101 can be slight curving, so stress concentration is in the part that semiconductor crystal wafer 101 is contacted with the leading edge of bearing knife 105,106.
Therefore, if the part of the bearing knife 105,106 of brisement device contacts as shown in Fig. 1 (a) with functional area 101a, 101b,
It can be to functional area applied force in brisement.The problem of accordingly, there exist the functional areas that may be damaged on semiconductor crystal wafer.
The present invention is to be conceived to such problem and winner, and its purpose is to provide one kind to not to semiconductor crystal wafer
Functional area applied force in the case of disjunction semiconductor crystal wafer brisement jig and use its breaking method thereof.
In order to solve the project, the object of the invention to solve the technical problems is realized using following technical scheme
's.The breaking method thereof of the brittle material substrate proposed according to the present invention, being will be in a face with along longitudinal direction and laterally neat
The breaking method thereof of the brittle material substrate brisement of multiple functional areas of arrangement and formation, in the formation of above-mentioned brittle material substrate
The face in functional region, in a manner of keeping the functional area centrally located along longitudinal direction and lateral clathrate form scribing line, use
With the identical spacing clathrate landform grooving of scribing line of the clathrate with above-mentioned brittle material substrate and by above-mentioned clathrate
Each center of slot area encompassed is formed with the brisement jig more than the protection hole of above-mentioned functional area, so that should
The protection hole of brisement jig is aligned with the functional area of above-mentioned semiconductor crystal wafer, and the scribing line of brittle material substrate is made to be split positioned at this
It is disconnected so that brittle material substrate is contacted with jig with above-mentioned brisement with the mode at the center of the slot of the clathrate of jig, from above-mentioned brittleness
The face that scribing line is not formed of material substrate compresses brisement stick and carries out brisement along scribing line.
In order to solve the project, the object of the invention to solve the technical problems is also realized using following technical scheme.
The brisement jig proposed according to the present invention, be by a face have along longitudinal direction and lateral proper alignment and formed multiple
Functional area and the face for being formed with functional area have so that the centrally located mode of functional area and clathrate formed
Scribing line brittle material substrate brisement brisement jig, and have：Slot, with the clathrate with above-mentioned brittle material substrate
The identical spacing clathrate of scribing line formed；And protection hole, it is set to by the slot area encompassed of above-mentioned clathrate
Each center, and it is more than above-mentioned functional area.
The object of the invention to solve the technical problems also can be used following technical measures and further realize.
Herein, it can also make above-mentioned brisement with jig at the both ends of above-mentioned slot and then there is at least two of confirmation scribing line to pass through
Through-hole.
The present invention has clear advantage and advantageous effect compared with prior art.By above-mentioned technical proposal, the present invention
The brisement jig and breaking method thereof of brittle material substrate at least have following advantages：According to the present invention with such a feature,
The position alignment in a manner of keeping the protection hole of brisement jig corresponding with the functional area of semiconductor crystal wafer and carry out brisement, therefore
Even and if will not also functional area be made to be contacted with jig or workbench in brisement.Therefore, can not damage functional area and along drawing
Line is by brittle material substrate brisement.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, and in order to allow the above and other objects, features and advantages of the present invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and coordinate attached drawing, detailed description are as follows.
Description of the drawings
Fig. 1 (a) and Fig. 1 (b) is the sectional view of state when indicating the brisement of previous semiconductor crystal wafer.
Fig. 2 is the figure of an example for the semiconductor crystal wafer for indicating the brisement object as the embodiment of the present invention.
Fig. 3 (a) is the front view for indicating the used brisement jig in the brisement of the embodiment of the present invention.
Fig. 3 (b) is the rearview for indicating the used brisement jig in the brisement of the embodiment of the present invention.
Fig. 4 A are the front views for amplifying the part A of some chain lines of brisement jig shown in Fig. 3 (a).
Fig. 4 B are by the part A of some chain lines of brisement jig shown in Fig. 3 (a) rearviews amplified and along protection hole
Sectional view.
Fig. 5 (a) and Fig. 5 (b) is the state for indicating to make using brisement jig in this embodiment semiconductor crystal wafer brisement
Sectional view.
【Main element symbol description】
10：Semiconductor crystal wafer
11：Functional area
20：Brisement jig
21：Protection hole
22：Through hole
23-1~23-n, 24-1~24-m：Slot
30：Adhesive tape
33：Brisement stick
Sxl~Sxm、Syl~Syn：Scribing line
Specific implementation mode
It is of the invention to reach the technological means and effect that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Attached drawing and preferred embodiment, to the brisement of the brittle material substrate proposed according to the present invention jig its specific implementation mode, knot
Structure, breaking method thereof, step, feature and its effect are described in detail as after.
Secondly, the embodiment of the present invention is illustrated.It, will be as the base of brisement object in the semiconductor of the embodiment
Plate is set as silicon semiconductor wafer.Fig. 2 indicates generally circular silicon semiconductor wafer 10, in the manufacturing step of semiconductor crystal wafer 10
In, along the line parallel with x-axis, y-axis formed in rows in length and breadth, and clathrate be formed with multiple functional areas 11.The functional area
11 be to enter the MEMS functional areas having mechanical constituent part, sensor, actuator such as group.Moreover, in order to be directed to each work(
Energy region carries out disjunction and becomes semiconductor chip, by lineation device (not shown), in the face for being formed with functional area such as one
Scribing line S is formed as shown in point chain line along longitudinal directionyl~Syn, transversely formed scribing line Sxl~Sxm。
Secondly, in the breaking step, make semiconductor crystal wafer 10 along each scribing line brisement.In the present embodiment, when making semiconductor
It is to use brisement jig 20 when 10 brisement of wafer.As shown in the rearview of the front view of Fig. 3 (a) and Fig. 3 (b), the brisement
It is the made of metal jig of the tablet of square with jig 20, such as thickness is set as several millimeters or so.The brisement with jig 20 with
Including the corresponding position in region of each functional area of semiconductor crystal wafer 10 is in the x-direction and the line in the directions y neat row in length and breadth
It arranges and is formed with multiple rectangular protection holes 21.The protection hole 21 be in brisement not to the function of semiconductor crystal wafer 10
11 applied force person of region is set to the through hole more than functional area herein.Moreover, being provided with around the protection hole 21 groups
The through hole 22 of scribing line confirmation.The through hole 22 is at least to be arranged 2 for 1 scribing line.In the through hole 22 so that brisement
Position, i.e. each functional area of semiconductor crystal wafer 10 and the protection of the centre of row and row are formed by with the protection hole 21 of jig 20
21 corresponding mode of hole accurately position alignment when, just will be formed in each scribing line S of semiconductor crystal wafer 10x1~Sxm、Syl
~SynIt is set to the position for penetrating through its center.
Fig. 4 A are the front views for amplifying the part A of some chain lines of Fig. 3 (a).Fig. 4 B are its back views, while indicating B-
B lines and line C-C sectional view.At the brisement back side of jig 20, with y-axis be formed parallel to the slot 23-1 of constant depth~
23-n.Also, being formed parallel to slot 24-1~24-m of constant depth with x-axis.Make the spacing of the slot of the clathrate and becomes
The scribing line S of the semiconductor crystal wafer 10 of brisement objectxl~Sxm、Syl~SynSpacing it is accurately consistent, and as have fixed width
Person.Moreover, being formed in a manner of the center in each region for making above-mentioned each protection hole 21 be located to be surrounded by slot.
And say, when making the situation of 10 brisement of semiconductor crystal wafer using brisement jig 20, in Fig. 5 (a) and Fig. 5 (b)
As shown in partial cutaway view, in advance by the face that scribing line is not formed of semiconductor crystal wafer 10 then on adhesive tape 30.Then,
It is situated between in the upper surface of the workbench 31 of brisement device and configures brisement jig 20 every Protection glue band 32, keeps semiconductor crystal wafer 10 anti-
Turn, positions and match in a manner of the protection hole 21 of jig 20 to make the functional area 11 of semiconductor crystal wafer 10 be completely contained in brisement
Set semiconductor crystal wafer 10.At this point, utilizing CCD (Charge Coupled Device, charge coupling device) cameras or infrared ray phase
Machine etc. from top via through hole 22 confirm semiconductor crystal wafer 10 scribing line, by make scribing line become slot center in a manner of accurately
It positions and configures.If workbench 31 is formed by the bearing knife of left and right, it can also open wide between bearing knife and confirm scribing line from lower section.Such as
This one, sectional view at this time becomes Fig. 5 (a) and Fig. 5 (b) those shown, and all functional areas 11 become opposite with protection hole 21
The position answered, without directly being contacted with brisement jig 20.Also, preformed scribing line Sxl~Sxm、Syl~SynBecome to be located at slot
The center of the upper surface of 23-1~23-n, 24-1~24-m.
If after being positioned by this method, brisement is carried out by brisement device, then as shown in Fig. 5 (b), when indentation brisement stick
When 33, semiconductor crystal wafer 10 is slightly recessed in slot, in this respect when in slot 23-2, but it is corresponding with functional area 11 in its left and right
Part be provided with protection hole 21, so can not direct contacted with brisement jig 20 and by 10 brisement of semiconductor crystal wafer.With this
Mode is along all scribing line similarly brisements.By behind the step of in by 30 removal of adhesive tape, can be by the work(of oblong-shaped
Can region disjunction and form multiple MEMS chips.
Furthermore in this embodiment, multiple protection holes 21 of brisement jig 20 can be used as through hole protection semiconductor die
Round functional area, but as long as when brisement contacting the functional area 11 of semiconductor crystal wafer 10, so also can not be
Through hole, but the hole of arbitrary depth.As long as also, also working as semiconductor in brisement about slot 23-1~23-n, 24-1~24-m
A part for wafer 10 does not contact when being absorbed in, so also can be the slot of arbitrary depth.
Also, in this embodiment, it is provided with jig to confirm the through hole of scribing line in brisement.As long as however, can incite somebody to action
Semiconductor crystal wafer with scribing line and functional area is positioned exactly on jig, is just not necessarily required to confirm the position of scribing line, also may be used
It is not provided with through hole.
In turn, in this embodiment, it is silicon substrate to be illustrated, but the present invention is also applicable as semiconductor crystal wafer
In silicon carbide substrate (S i C substrates), sapphire substrate, LTCC (Low Temperature Co-fired Ceramic, low temperature
Common burning porcelain) the various brittle material substrates such as substrate.
When crossing to the brittle material substrate with region to be protected and break it, can not damage should protect the present invention
The region of shield and carry out brisement, so can be effectively adapted to be formed with the brisement device of the substrate of functional area.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
For the equivalent embodiment of equivalent variations, as long as being the content without departing from technical solution of the present invention, according to the technical essence of the invention
To any simple modification, equivalent change and modification made by above example, in the range of still falling within technical solution of the present invention.
Claims (3)
1. a kind of breaking method thereof of brittle material substrate, it is characterised in that it is will be in a face with along longitudinal direction and laterally neat
The breaking method thereof of the brittle material substrate brisement of multiple functional areas of arrangement and formation；
Be formed with the face of functional area in above-mentioned brittle material substrate, in a manner of keeping the functional area centrally located along longitudinal direction and
Form scribing line to lateral clathrate；
Using with spacing clathrate landform grooving identical with the scribing line of the clathrate of above-mentioned brittle material substrate and by above-mentioned
Each center of the slot area encompassed of clathrate is formed with the brisement more than the protection hole of above-mentioned functional area with controlling
Tool, so that the protection hole of the brisement jig is aligned with the functional area of above-mentioned brittle material substrate, makes brittle material substrate
Mode of the scribing line positioned at the center of the slot of the clathrate of brisement jig makes brittle material substrate be connect with jig with above-mentioned brisement
It touches；
Brisement stick is compressed along scribing line and carry out brisement from the face that scribing line is not formed of above-mentioned brittle material substrate.
2. a kind of brisement jig, it is characterised in that its by a face have along longitudinal direction and lateral proper alignment and formed
Multiple functional areas and have so that the centrally located mode of functional area and clathrate in the face for being formed with functional area
The brisement jig of the brittle material substrate brisement of the scribing line of formation；And
Have：Slot is formed with spacing clathrate identical with the scribing line of the clathrate of above-mentioned brittle material substrate；And
Protection hole is set to by each center of the slot area encompassed of above-mentioned clathrate, and is more than above-mentioned function
Region.
3. brisement jig according to claim 2, it is characterised in that wherein above-mentioned brisement jig is the two of above-mentioned slot
It holds and then at least two through hole for confirming scribing line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-228873 | 2012-10-16 | ||
| JP2012228873A JP5991133B2 (en) | 2012-10-16 | 2012-10-16 | Breaking jig for brittle material substrate and breaking method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103722623A CN103722623A (en) | 2014-04-16 |
| CN103722623B true CN103722623B (en) | 2018-09-25 |
Family
ID=50447042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310429653.7A Expired - Fee Related CN103722623B (en) | 2012-10-16 | 2013-09-13 | The brisement jig and breaking method thereof of brittle material substrate |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5991133B2 (en) |
| CN (1) | CN103722623B (en) |
| TW (1) | TWI545636B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6282176B2 (en) * | 2014-05-29 | 2018-02-21 | 三星ダイヤモンド工業株式会社 | Edge material separator for brittle material substrate |
| JP6365056B2 (en) * | 2014-07-22 | 2018-08-01 | 三星ダイヤモンド工業株式会社 | Method for dividing bonded substrate and break blade |
| JP2016043505A (en) * | 2014-08-20 | 2016-04-04 | 三星ダイヤモンド工業株式会社 | Dividing method and dividing device of brittle material substrate |
| JP2016184650A (en) * | 2015-03-26 | 2016-10-20 | 三星ダイヤモンド工業株式会社 | Break device |
| TWI632040B (en) * | 2017-07-10 | 2018-08-11 | 煜峰投資顧問有限公司 | Apparatus and method for breaking brittle substrate |
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| JP2004039931A (en) * | 2002-07-04 | 2004-02-05 | Sumitomo Electric Ind Ltd | Method and device for cutting substrate |
| CN101148244A (en) * | 2007-10-19 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer-class tool for sealing microcomputer electric system device and method |
| CN101685785A (en) * | 2008-09-26 | 2010-03-31 | 日月光半导体制造股份有限公司 | Fixing fixture of throwing machine table and window-type press board thereof |
| CN102218777A (en) * | 2010-03-31 | 2011-10-19 | 三星钻石工业股份有限公司 | Disjunction method of brittle material substrate |
| CN202434491U (en) * | 2011-12-31 | 2012-09-12 | 刘胜 | Wafer bonding fixture with bumps |
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| JPH01238907A (en) * | 1988-03-18 | 1989-09-25 | Nec Corp | Semiconductor assembling jig |
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| JPH11274110A (en) * | 1998-03-20 | 1999-10-08 | Towa Corp | Cutting method and apparatus for semiconductor wafer |
| US20020025626A1 (en) * | 1998-05-05 | 2002-02-28 | Sunil Hattangady | Integrated dielectric and method |
| JP2000294521A (en) * | 1999-04-09 | 2000-10-20 | Daido Steel Co Ltd | Manufacture of electronic element |
| JP2001077235A (en) * | 1999-09-06 | 2001-03-23 | Mitsui High Tec Inc | Board for mounting semiconductor elements |
| JP2002246336A (en) * | 2001-02-19 | 2002-08-30 | Matsushita Electric Ind Co Ltd | Electronic equipment and its dicing method |
| JP2004055860A (en) * | 2002-07-22 | 2004-02-19 | Renesas Technology Corp | Semiconductor device fabricating process |
| CA2490849C (en) * | 2004-12-22 | 2009-12-22 | Ibm Canada Limited - Ibm Canada Limitee | An automated singularization tool for brittle insulating arrays |
| JP2007095780A (en) * | 2005-09-27 | 2007-04-12 | Oki Electric Ind Co Ltd | Tool and method for manufacturing semiconductor device |
| JP5330845B2 (en) * | 2009-01-30 | 2013-10-30 | 三星ダイヤモンド工業株式会社 | Substrate break device |
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2012
- 2012-10-16 JP JP2012228873A patent/JP5991133B2/en not_active Expired - Fee Related
-
2013
- 2013-05-23 TW TW102118207A patent/TWI545636B/en not_active IP Right Cessation
- 2013-09-13 CN CN201310429653.7A patent/CN103722623B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039931A (en) * | 2002-07-04 | 2004-02-05 | Sumitomo Electric Ind Ltd | Method and device for cutting substrate |
| CN101148244A (en) * | 2007-10-19 | 2008-03-26 | 日月光半导体制造股份有限公司 | Wafer-class tool for sealing microcomputer electric system device and method |
| CN101685785A (en) * | 2008-09-26 | 2010-03-31 | 日月光半导体制造股份有限公司 | Fixing fixture of throwing machine table and window-type press board thereof |
| CN102218777A (en) * | 2010-03-31 | 2011-10-19 | 三星钻石工业股份有限公司 | Disjunction method of brittle material substrate |
| CN202434491U (en) * | 2011-12-31 | 2012-09-12 | 刘胜 | Wafer bonding fixture with bumps |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201417155A (en) | 2014-05-01 |
| TWI545636B (en) | 2016-08-11 |
| JP2014082301A (en) | 2014-05-08 |
| CN103722623A (en) | 2014-04-16 |
| JP5991133B2 (en) | 2016-09-14 |
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